WO2003088326A3 - Procede de chargement de tranche semi-conductrice sur un support de tranche afin de reduire les chocs thermiques - Google Patents

Procede de chargement de tranche semi-conductrice sur un support de tranche afin de reduire les chocs thermiques Download PDF

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Publication number
WO2003088326A3
WO2003088326A3 PCT/US2003/009806 US0309806W WO03088326A3 WO 2003088326 A3 WO2003088326 A3 WO 2003088326A3 US 0309806 W US0309806 W US 0309806W WO 03088326 A3 WO03088326 A3 WO 03088326A3
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WO
WIPO (PCT)
Prior art keywords
wafer
thermal shock
wafer holder
measure
loading
Prior art date
Application number
PCT/US2003/009806
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English (en)
Other versions
WO2003088326A2 (fr
Inventor
Tony J Keeton
Michael R Stamp
Mark R Hawkins
Original Assignee
Asm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asm Inc filed Critical Asm Inc
Priority to EP03746566A priority Critical patent/EP1532660A2/fr
Priority to JP2003585161A priority patent/JP4346071B2/ja
Priority to KR10-2004-7015680A priority patent/KR20040091784A/ko
Publication of WO2003088326A2 publication Critical patent/WO2003088326A2/fr
Publication of WO2003088326A3 publication Critical patent/WO2003088326A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece

Abstract

Selon l'invention, une ou plusieurs parmi trois mesures différentes sont prises afin de préchauffer une tranche semi-conductrice (44) avant son chargement en contact direct sur un support de tranche (42), de façon à obtenir une productivité optimale tout en réduisant les risques de chocs thermiques sur la tranche (44). La première mesure consiste à déplacer le support de tranche (42) dans une position élevée avant insertion de la tranche (44) dans l'enceinte de réaction (20) et à maintenir la tranche (44) au dessus du support de tranche (42). La deuxième mesure consiste à augmenter le débit d'écoulement d'un gaz conducteur de chaleur (tel que le gaz de purge H2) à travers l'enceinte (20) avant d'y insérer la tranche (44). La troisième mesure consiste à fournir une polarisation d'énergie à des éléments de chaleur rayonnants (par exemple, des lampes chauffantes) (51) au dessus de l'enceinte de réaction (20).
PCT/US2003/009806 2002-04-05 2003-03-27 Procede de chargement de tranche semi-conductrice sur un support de tranche afin de reduire les chocs thermiques WO2003088326A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP03746566A EP1532660A2 (fr) 2002-04-05 2003-03-27 Procede de chargement de tranche semi-conductrice sur un support de tranche afin de reduire les chocs thermiques
JP2003585161A JP4346071B2 (ja) 2002-04-05 2003-03-27 熱衝撃を減少させるウエハーホルダー上へのウエハー装着方法
KR10-2004-7015680A KR20040091784A (ko) 2002-04-05 2003-03-27 열충격을 감소시키도록 웨이퍼를 웨이퍼 홀더 상에적층하는 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/118,073 US6861321B2 (en) 2002-04-05 2002-04-05 Method of loading a wafer onto a wafer holder to reduce thermal shock
US10/118,073 2002-04-05

Publications (2)

Publication Number Publication Date
WO2003088326A2 WO2003088326A2 (fr) 2003-10-23
WO2003088326A3 true WO2003088326A3 (fr) 2005-03-24

Family

ID=28674343

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/009806 WO2003088326A2 (fr) 2002-04-05 2003-03-27 Procede de chargement de tranche semi-conductrice sur un support de tranche afin de reduire les chocs thermiques

Country Status (5)

Country Link
US (1) US6861321B2 (fr)
EP (1) EP1532660A2 (fr)
JP (1) JP4346071B2 (fr)
KR (1) KR20040091784A (fr)
WO (1) WO2003088326A2 (fr)

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US7260959B2 (en) * 2004-08-27 2007-08-28 Corning Incorporated Glass handling system and method for using same
KR101579217B1 (ko) * 2007-12-20 2015-12-21 소이텍 전구체 개스를 에피택셜 성장 기판으로 전달하는 장치
US8394229B2 (en) * 2008-08-07 2013-03-12 Asm America, Inc. Susceptor ring
US9885123B2 (en) 2011-03-16 2018-02-06 Asm America, Inc. Rapid bake of semiconductor substrate with upper linear heating elements perpendicular to horizontal gas flow
JP5807505B2 (ja) * 2011-10-14 2015-11-10 信越半導体株式会社 エピタキシャルウエーハの製造方法
JP5609896B2 (ja) * 2012-01-13 2014-10-22 株式会社安川電機 搬送システム
WO2014199538A1 (fr) * 2013-06-11 2014-12-18 キヤノンアネルバ株式会社 Dispositif de traitement sous vide
KR101436059B1 (ko) 2013-08-30 2014-09-01 주식회사 엘지실트론 반도체 제조 장치 및 방법
JP6324800B2 (ja) * 2014-05-07 2018-05-16 東京エレクトロン株式会社 成膜方法および成膜装置
JP2017022343A (ja) * 2015-07-15 2017-01-26 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体製造装置、ウエハリフトピン穴清掃治具
US10840114B1 (en) * 2016-07-26 2020-11-17 Raytheon Company Rapid thermal anneal apparatus and method
US11230766B2 (en) * 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
DE102021110305A1 (de) 2021-04-22 2022-10-27 Aixtron Se CVD-Reaktor und Verfahren zu dessen Beladung

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Also Published As

Publication number Publication date
WO2003088326A2 (fr) 2003-10-23
JP4346071B2 (ja) 2009-10-14
JP2005524222A (ja) 2005-08-11
US20030190823A1 (en) 2003-10-09
US6861321B2 (en) 2005-03-01
EP1532660A2 (fr) 2005-05-25
KR20040091784A (ko) 2004-10-28

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