WO2003086971A1 - Procede de synthese de materiaux superdurs - Google Patents

Procede de synthese de materiaux superdurs Download PDF

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WO2003086971A1
WO2003086971A1 PCT/EA2003/000002 EA0300002W WO03086971A1 WO 2003086971 A1 WO2003086971 A1 WO 2003086971A1 EA 0300002 W EA0300002 W EA 0300002W WO 03086971 A1 WO03086971 A1 WO 03086971A1
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fact
ultra
pressure
mass
bορa
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Igor Michailovich Starchenko
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Igor Michailovich Starchenko
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Priority to AU2003236208A priority Critical patent/AU2003236208A1/en
Publication of WO2003086971A1 publication Critical patent/WO2003086971A1/fr

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    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00Nitrogen; Compounds thereof
    • C01B21/06Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/064Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • B01J3/062Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/04Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic
    • B24D3/14Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic ceramic, i.e. vitrified bondings
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/25Diamond
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/25Diamond
    • C01B32/26Preparation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00Processes utilising sub- or super atmospheric pressure
    • B01J2203/06High pressure synthesis
    • B01J2203/0605Composition of the material to be processed
    • B01J2203/062Diamond
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00Processes utilising sub- or super atmospheric pressure
    • B01J2203/06High pressure synthesis
    • B01J2203/065Composition of the material produced
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00Processes utilising sub- or super atmospheric pressure
    • B01J2203/06High pressure synthesis
    • B01J2203/065Composition of the material produced
    • B01J2203/0655Diamond
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00Processes utilising sub- or super atmospheric pressure
    • B01J2203/06High pressure synthesis
    • B01J2203/065Composition of the material produced
    • B01J2203/066Boronitrides
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00Processes utilising sub- or super atmospheric pressure
    • B01J2203/06High pressure synthesis
    • B01J2203/0675Structural or physico-chemical features of the materials processed
    • B01J2203/0685Crystal sintering

Definitions

  • the current time for all materials is diamond, cubic nitride of boron, fullerenes, as well as incapable minerals.
  • Izves ⁇ ny s ⁇ s ⁇ by ⁇ lucheniya is ⁇ uss ⁇ venny ⁇ almaz ⁇ v ⁇ u ⁇ em v ⁇ zdeys ⁇ viya vys ⁇ g ⁇ pressure and at ⁇ em ⁇ e ⁇ a ⁇ u ⁇ y shi ⁇ u, s ⁇ de ⁇ zhaschuyu g ⁇ a ⁇ i ⁇ , ⁇ a ⁇ ⁇ sn ⁇ vn ⁇ y ⁇ m ⁇ nen ⁇ , in admixture with ⁇ a ⁇ aliza ⁇ m in ⁇ echenie zadann ⁇ g ⁇ v ⁇ emeni (see ⁇ e ⁇ eschagin L. ⁇ .- Izb ⁇ annye ⁇ udy Sin ⁇ e ⁇ iches ⁇ ie diamonds and gid ⁇ e ⁇ s ⁇ ueiya -...
  • Izves ⁇ en s ⁇ s ⁇ b ⁇ lucheniya is ⁇ uss ⁇ venny ⁇ almaz ⁇ v, v ⁇ lyuchayuschy im ⁇ ulsn ⁇ e v ⁇ zdeys ⁇ vie on ⁇ b ⁇ azets g ⁇ a ⁇ i ⁇ a and me ⁇ alla pressure and nag ⁇ ev ⁇ m ⁇ u ⁇ em ⁇ us ⁇ aniya im ⁇ ulsa ele ⁇ iches ⁇ g ⁇ ⁇ a ⁇ ⁇ b ⁇ aztsu, s ⁇ de ⁇ zhaschemu me ⁇ all g ⁇ u ⁇ y of: copper, aluminum, ni ⁇ el, zhelez ⁇ with v ⁇ lyucheniem mel ⁇ dis ⁇ e ⁇ sny ⁇ chas ⁇ its g ⁇ a ⁇ i ⁇ a, s ⁇ edny ⁇ azme ⁇ ⁇ y ⁇ 5- 150 m ⁇ m , for the following ratio of components,%: group - 5-55, metal of the indicated group - 45-95 (see
  • the method of producing diamonds is known, including exposure to carbon-bearing material with high pressure and heating in the region of stability of diamond.
  • alpha-carbines are used in amorphous form. Dolphin-carbine can contain carbon in the amount of 99.0-99.9 wt.%>, And heating leads to temperatures of 1400 - 1700 ° C (see the automatic data sheet ⁇ / ⁇ 31.
  • a well-known method makes it possible to speed up the process and to increase the output of diamonds a little, but the same output rate is still not found to be high enough. This method also remains energy-efficient.
  • the process of producing a diamond including the heating of a carbon-containing material, which is separated by a separating pressure, and it is separated by a Heating of the material takes place at a speed of 1500-2000 deg / s and pressure changes with a speed of 3-4 GPa. output of 0.5–5.0 s.
  • the separating layer uses a material of 0.45–5.0 G ⁇ / m and a dispersion of 1–10 ⁇ m. ⁇ P ⁇ C 01 ⁇ 31/06.
  • a well-known method of operation is used for sufficiently high temperatures and pressures and does not prevent the production of large diamonds.
  • the synthesis catalysts and the sizes of the synthesized particles are also used for a wide range of values.
  • the method of obtaining diamond is known, including the compression of the carbon-containing material to a good value and its heating with the following extraction and pressure.
  • ⁇ Medical Carbon-friendly materials use fullerene Different molecular weights (from C to 84 ).
  • a pressure gradient above 1 GPa / mm may be generated.
  • the value of the main pressure reaches 15-25 GPa.
  • Pressure may be reduced by heating below 1000 ° C (see international application ⁇ ⁇ -.93 / 02012. ⁇ P ⁇ C 01 ⁇ 31/00. Published 04.02.93),
  • a known method allows you to maintain a constant temperature of the device; Laser heating also causes significant energy consumption.
  • Another well-known method includes the disposal of fullerene, located between two parts of the mass of the land pressure 6.7 GPa and nag ⁇ ev ⁇ m d ⁇ ⁇ em ⁇ e ⁇ a ⁇ u ⁇ y 1200-1850 ° C ⁇ a ⁇ aliza ⁇ ami: ni ⁇ el, and ⁇ bal ⁇ s ⁇ lav ⁇ bal ⁇ a ( ⁇ s ⁇ sh ⁇ ⁇ .. ⁇ ayue ⁇ e ⁇ age S. S. ⁇ azza ⁇ .- C 6 ⁇ ⁇ i ⁇ ege ⁇ e al Sag ⁇ ⁇ igse & ⁇ at ⁇ Zu ⁇ ez ⁇ z g - - " ⁇ consumer ⁇ mony metre ⁇ ⁇ ⁇ ⁇ - - 1993. ⁇ .97.
  • a well-known method allows to increase the output of diamonds to a value of about 90%), but at the same time it is possible to maintain a high temperature of 6 (6). At the same time, the supplied temperatures are reasonably high and condition the higher energy costs and the high cost of the emitted diamonds.
  • the closest method for the synthesis of diamonds is known, which, in turn, is a part of a crystalline or catalytic addition that uses fullerene, it is consumed. In this way, the synthesis occurs at comparatively low pressures (4.5-5.5 GPa).
  • the method is also charac- terized by a sufficiently high output of diamond.
  • the method of sintering cubic nitride of boron from the sheen is known to be known.
  • this method of manufacture for the manufacture of overfood ⁇ m ⁇ zitsi ⁇ nn ⁇ g ⁇ ma ⁇ e ⁇ iala s ⁇ de ⁇ zhi ⁇ mixture ul ⁇ adis ⁇ e ⁇ sn ⁇ g ⁇ ⁇ sh ⁇ a ni ⁇ ida b ⁇ a, ⁇ sh ⁇ a ⁇ ubiches ⁇ g ⁇ ni ⁇ ida b ⁇ a with ⁇ azme ⁇ m ze ⁇ na 3 - 100 m ⁇ m and vyu ⁇ tsi ⁇ d ⁇ bn ⁇ g ⁇ ni ⁇ ida b ⁇ a ⁇ i following i ⁇ s ⁇ n ⁇ shenii% wt./wt ul ⁇ adis ⁇ e ⁇ si ⁇ nny ⁇ sh ⁇ ni ⁇ ida b ⁇ a 10 - 20, vyu ⁇ tsi ⁇ d ⁇ bny ni ⁇ id
  • This method actually ensures that only particles are secured with a binder, and not a synthesis material. However, the sintering temperature also remains high.
  • the method of producing a diamond tool is known by sintering a diamond grinding of a micro-sized diamond with a crushed ultra-dispersed diamond. With this, a high-quality tool with a tightness is obtained, up to 85%> diamond density. In this case, the load is not used, and the spoilage of dusts occurs at the borders of the grains. See the Japanese Patent Application. ⁇ 2030667 Authors ⁇ ⁇ and others. addressed to ⁇ ⁇ & ⁇ ⁇ ⁇ , published 1990-02-01.
  • This method will allow you to buy large quantities of original diamond powder, as well as to achieve a good quality of processing.
  • the objective of the present invention was the development of such a method of receiving overpressure, which would ensure a high output of a low pressure.
  • P ⁇ s ⁇ avlennaya task ⁇ eshae ⁇ sya ⁇ em, ch ⁇ in s ⁇ s ⁇ be ⁇ lucheniya S ⁇ in ⁇ m including is ⁇ uss ⁇ venny ⁇ almaz ⁇ v, v ⁇ lyuchayuschem v ⁇ zdeys ⁇ vie pressure on nag ⁇ ev ⁇ m shi ⁇ u with g ⁇ a ⁇ i ⁇ m / or ge ⁇ sag ⁇ nalnym ni ⁇ id ⁇ m b ⁇ a vv ⁇ di ⁇ sya ⁇ is ⁇ all ⁇ b ⁇ azuyuschaya d ⁇ bav ⁇ a with ⁇ sleduyuschey vyde ⁇ zh ⁇ y ⁇ i ⁇ em ⁇ e ⁇ a ⁇ u ⁇ e, d ⁇ s ⁇ a ⁇ chn ⁇ y for sin ⁇ eza.
  • the method is suitable for the fact that, as a part of the process, addi- tional additives are used in the process of disinfection of the material of the cubic device.
  • One of the options for the implementation of an ultra-portable equipment is the use of an ultra-portable equipment.
  • the overbearing material used by the customer is using an ultrasound device.
  • the most preferable dispersion of the additives is 4–40 nm.
  • the method is designed to be handled in a manner that does not carry out any process above the value of 300 ° C, which is carried out below.
  • ⁇ d ⁇ ug ⁇ m va ⁇ ian ⁇ e in ⁇ aches ⁇ ve is ⁇ dn ⁇ y ⁇ m ⁇ nen ⁇ y ne ⁇ ve ⁇ d ⁇ y ⁇ is ⁇ alliches ⁇ y ⁇ azy is ⁇ lzuyu ⁇ g ⁇ a ⁇ i ⁇ ⁇ i s ⁇ n ⁇ shenii ⁇ m ⁇ nen ⁇ v g ⁇ a ⁇ i ⁇ a and ul ⁇ adis ⁇ e ⁇ sn ⁇ y d ⁇ bav ⁇ i ⁇ 0,99 -99,00 d ⁇ 99.00 - 0.99 wt%>, and ⁇ e ⁇ m ⁇ ba ⁇ iches ⁇ uyu ⁇ b ⁇ ab ⁇ u ⁇ ed ⁇ ch ⁇ i ⁇ eln ⁇ ⁇ susches ⁇ vlyayu ⁇ ⁇ i ⁇ em ⁇ e ⁇ a ⁇ u ⁇ e values above 700. ° C
  • the duration of the process is agreed upon between 20 s and 300 s.
  • a predominantly industrial process is carried out for 40 s. - 80 s.
  • This method is used in a manner that, as a part of crystalline add-ons, uses an ultra-portable device.
  • the ultra-dispersed addition is 2-100 nm.
  • a predominant dispersion of the additives is 4–40 nm.
  • ch ⁇ in ⁇ aches ⁇ ve ul ⁇ adis ⁇ e ⁇ sn ⁇ g ⁇ ⁇ sh ⁇ a is ⁇ lzuyu ⁇ ul ⁇ adis ⁇ e ⁇ sny ⁇ sh ⁇ ma ⁇ e ⁇ iala ⁇ ubiches ⁇ y s ⁇ u ⁇ u ⁇ y.
  • the overbearing material used by the customer is using an ultrasound device.
  • the quality of the ultrasound equipment is overwhelming and the product is very compact.
  • the process of manufacturing the instruments is in the process, that is, the process is carried out at a temperature in excess of 300
  • the thermal treatment is predominantly carried out at temperatures above a value of 500 ° C
  • the thermal treatment is predominantly carried out at temperatures above 700 C
  • the manufacturing methods of the tools are processed by the fact that the process takes 20 s - 300 s.
  • a predominantly industrial process is carried out for 40 s. - 80 s. ⁇ sche ⁇ din ⁇ be ⁇ iz ⁇ b ⁇ e ⁇ eniya - s ⁇ s ⁇ b izg ⁇ vleniya sve ⁇ ve ⁇ dy ⁇ ⁇ sh ⁇ v zadann ⁇ g ⁇ ⁇ azme ⁇ a, v ⁇ lyuchae ⁇ ⁇ ig ⁇ vlenie shi ⁇ y, v ⁇ lyuchayuschey ma ⁇ e ⁇ ialy ne ⁇ ve ⁇ d ⁇ y ⁇ is ⁇ alliches ⁇ y ⁇ azy introduction ⁇ is ⁇ all ⁇ b ⁇ azuyuschi ⁇ d ⁇ bav ⁇ , ⁇ edva ⁇ i ⁇ eln ⁇ e ⁇ m ⁇ vanie ⁇ m ⁇ a ⁇ a, ⁇ susches ⁇ vlenie ⁇ e ⁇ m ⁇ ba ⁇ iches ⁇ y ⁇ b ⁇ ab ⁇ i mixture ⁇ i pressure ⁇ em ⁇ e ⁇ a ⁇ u ⁇ e above ⁇ i ⁇ iches ⁇ i ⁇
  • a predominant dispersion of the additives is 4–40 nm.
  • the method is characterized by the fact that, as a part of the ultra-portable access, the ultra-portable access to the powder is used.
  • the overbearing material used by the customer is using an ultrasound device.
  • the quality of the ultrasound equipment is overwhelming and the product is very compact.
  • the cubic structure of the consumer is possible to use an ultra-portable interface.
  • the method of manufacturing the products is in the process, that is, the process is carried out at a temperature in excess of 300 ° C and is not used
  • the processing plant is predominantly at temperatures above 500 ° C
  • the thermal treatment is predominantly carried out above 700 ° ⁇
  • the original components are not in use with a crystalline phase, and they use a mixture of charge and non-hazardous oxide at a cost of 99%. >, and the processing plant predominantly has a temperature above 700 ° ⁇
  • the manufacturing methods of the tools are processed in the manner that the processing process takes 20 seconds to 300 seconds.
  • the inventive method of obtaining the above materials is subject to the following. It is prepared from a group of products and / or hexahydrogen boron nitride with the addition of a mixture of crystalline additives in the mixer. Received b ⁇ i ⁇ e ⁇ i ⁇ uyu ⁇ ⁇ d pressure and ⁇ azmeschayu ⁇ lib ⁇ in ⁇ l ⁇ s ⁇ i ⁇ e ⁇ l ⁇ ele ⁇ iz ⁇ lyatsi ⁇ nn ⁇ g ⁇ ⁇ n ⁇ eyne ⁇ a for g ⁇ a ⁇ i ⁇ a, lib ⁇ in tsilind ⁇ iches ⁇ y nag ⁇ eva ⁇ elny elemen ⁇ , izg ⁇ vlenny of g ⁇ a ⁇ i ⁇ a mixture ge ⁇ sag ⁇ nalnym ni ⁇ id ⁇ m b ⁇ a and za ⁇ em in ⁇ l ⁇ s ⁇ ⁇ e ⁇ l ⁇ ele ⁇ iz ⁇ lyatsi ⁇ nn ⁇ g ⁇ ⁇ n ⁇ eyne ⁇ a for
  • the inventive method of obtaining the above materials is subject to the following.
  • P ⁇ ig ⁇ avlivayu ⁇ shi ⁇ u of is ⁇ dn ⁇ g ⁇ ma ⁇ e ⁇ iala (g ⁇ a ⁇ i ⁇ a, ge ⁇ sag ⁇ naln ⁇ g ⁇ ni ⁇ ida b ⁇ a (G ⁇ B) or a mixture g ⁇ a ⁇ i ⁇ a with ge ⁇ sag ⁇ nalnym ni ⁇ id ⁇ m b ⁇ a) with d ⁇ bavleniem ul ⁇ adis ⁇ e ⁇ sny ⁇ ⁇ sh ⁇ v (na ⁇ ime ⁇ , ul ⁇ adis ⁇ e ⁇ sn ⁇ g ⁇ diamond (UD ⁇ ) ul ⁇ adis ⁇ e ⁇ sn ⁇ g ⁇ ⁇ sh ⁇ a ⁇ ubiches ⁇ g ⁇ ni ⁇ ida b ⁇ a (UDP ⁇ B) ul ⁇ adis ⁇ e ⁇ sny ⁇ ⁇ sh ⁇ v ma ⁇ e ⁇ ial ⁇ v 4 g ⁇ u ⁇ y , for example, dark matter (LDP), ultra-dispersible
  • P ⁇ ig ⁇ avlivayu ⁇ shi ⁇ u of is ⁇ dn ⁇ g ⁇ ma ⁇ e ⁇ iala g ⁇ a ⁇ i ⁇ a with d ⁇ bavleniyam mixing ul ⁇ adis ⁇ e ⁇ sny ⁇ ⁇ sh ⁇ v (na ⁇ ime ⁇ , ul ⁇ adis ⁇ e ⁇ sn ⁇ g ⁇ diamond ul ⁇ adis ⁇ e ⁇ sn ⁇ g ⁇ ⁇ sh ⁇ a ⁇ ubiches ⁇ g ⁇ ni ⁇ ida b ⁇ a, ul ⁇ dis ⁇ e ⁇ sny ⁇ ⁇ sh ⁇ v ma ⁇ e ⁇ ial ⁇ v 4 g ⁇ u ⁇ y, ul ⁇ adis ⁇ e ⁇ sny ⁇ ⁇ sh ⁇ v ma ⁇ e ⁇ ial ⁇ v ⁇ ⁇ ) in smesi ⁇ ele.
  • Table 1 The following are examples (Table 1) of a cost-effective method of obtaining material from materials containing udd and diamond.
  • ultra-fine bulk diamond an ultra-fine bulk diamond is used.
  • Mixing of the components is carried out in the mixer, achieving the separation of ultra-dispersed diamond in the volume of the unit.
  • the loaded container implements high pressure of the type “toroid”, compresses to 6.5 GPa, heats up due to the discharge of electrical pressure. for 40 seconds, turn off the heat, relieve pressure and remove the synthesis product. After disassembling the processing plant in the water, we receive the necessary preparation for the tool.
  • the method of X-ray diffraction analysis determines the transfer of the group to diamond in the material, which makes up 90% of the mass.
  • the composition of the obtained material for the tool is 20.0 mass. % UD ⁇ , 72.0 mass. %> diamond, 8.0 mass. %> group.
  • the composition of the obtained material is 10 mass. %> UD ⁇ , 87.0 mass. % diamond, 3.0 mass. %> group.
  • An incinerator in an acid environment removes the charge.
  • the output of the ⁇ product is 97.0 mass. %., diamond - 87.0 wt.%>.
  • the composition of the obtained material is 10 mass. % UD ⁇ , 75.0 mass. % diamond, 15.0 mass. % group.
  • An incinerator in an acid environment removes the charge.
  • P ⁇ luchennuyu shi ⁇ u b ⁇ i ⁇ e ⁇ i ⁇ uyu ⁇ ⁇ d pressure ⁇ 0.5 ⁇ a and ⁇ azmeschayu ⁇ in tsilind ⁇ iches ⁇ ie nag ⁇ eva ⁇ elnye elemen ⁇ y from ethyl g ⁇ a ⁇ i ⁇ a and ge ⁇ sag ⁇ naln ⁇ g ⁇ ni ⁇ ida b ⁇ a in ⁇ l ⁇ s ⁇ i ⁇ e ⁇ l ⁇ ele ⁇ iz ⁇ lyatsi ⁇ nn ⁇ g ⁇ ⁇ n ⁇ eyne ⁇ a, za ⁇ yvaya with ⁇ bei ⁇ s ⁇ n ⁇ ysh ⁇ ami, izg ⁇ vlennymi ⁇ ess ⁇ vaniem g ⁇ a ⁇ i ⁇ a mixture and ge ⁇ sag ⁇ naln ⁇ g ⁇ ni ⁇ ida b ⁇ a.
  • the method of X-ray diffraction analysis of the X-ray differs from the process of transferring the heat supply to the battery, as a result of which the bulk of the hardware was 95% of the total Composition
  • the obtained material for the tool is 20.0 mass. %> UD ⁇ , 76.0 mass. %> ⁇ , 4.0 mass. % hexagonal boron.
  • the composition of the obtained material is 10 mass. %> UD ⁇ , 88.0 mass. %> cubic nitride of boron, 2.0 mass. %> hexagonal boron.
  • the hot solution removes the hexagonal nitride of boron.
  • the composition of the obtained material is 10 mass. %> UD ⁇ , 77.0 mass. %> cubic nitride of boron, 13.0 mass. %> hexagonal boron. Hot pressure eliminates the hexagonal nitride of the boron.
  • Chart of Z Examples of the end-to-end implementation of the method for the production of synthetic over-blasting materials containing diamond, diamond and cubic nitride.
  • Mixing of the components is carried out in the mixer, achieving an equal separation of the charge and the hexagonal boron nitride. Mixing of the components is further carried out in the mixer, achieving the separation of ultra-dispersed diamond in the volume of the bulk and the hexagonal nitride.
  • the composition of the obtained material for the tool is 10.0 mass. % UD ⁇ , 81.0 mass. %> diamond and cubic nitride boron (39.0 mass%> diamond and 42 mass.> DB), 9.0 mass. %> bulk and hexagonal boron nitride (respectively 6.0 mass%> bulk and 3.0 mass%> hexagonal boron nitride).
  • the share of the transfer of the material and the hydrogen-boron nitride in the diamond and the cubic nitride of the boron in the material of the tool is 90% in the body; Having compiled the obtained material, 10 masses. %> UD ⁇ , 82.0 mass. %> diamond and cubic nitride boron (39.0 wt.%> diamond and 43.0 mass%> cubic nitride boron) and 8.0 mass.
  • G ⁇ a ⁇ i ⁇ a and ge ⁇ sag ⁇ naln ⁇ g ⁇ ni ⁇ ida b ⁇ a (s ⁇ ve ⁇ s ⁇ venn ⁇ 6.0 wt.%> G ⁇ a ⁇ i ⁇ a and 2.0 wt.%> Ge ⁇ sag ⁇ naln ⁇ g ⁇ ni ⁇ ida b ⁇ a) ⁇ e ⁇ d ⁇ m ⁇ alivaniya in s ⁇ ede ⁇ isl ⁇ da and ⁇ b ⁇ ab ⁇ i in g ⁇ yachey schel ⁇ chi udalyayu ⁇ g ⁇ a ⁇ i ⁇ and ge ⁇ sag ⁇ nalny ni ⁇ id b ⁇ a.
  • the composition of the obtained material is 10 mass. %> UD ⁇ , 87.0 mass. % diamond and cubic nitride boron, 3.0 mass. > group and hexagonal boron.
  • the method of incineration in the environment of acid and processing in hot alkali removes the group and the hexagonal nitride.
  • the output of the ⁇ product is 97.0 mass. %., diamond and cubic nitride boron- 87.0 wt.%>. Sizes of diamond particles and cubic nitride of boron - 2.4 ⁇ 0.1 ⁇ m
  • the composition of the obtained material is 10 mass. %> UD ⁇ , 60.0 mass. %> diamond and cubic nitride boron, 30.0 mass. %> group and hexagonal boron nitride.
  • the method of incineration in the environment of acid and processing in hot alkali removes the group and the hexagonal nitride.
  • the product of ⁇ product is 70.0 mass. %>., diamond and cubic nitride boron- 60.0 wt.%>. Sizes of diamond particles and cubic nitride of boron - 0.6 ⁇ 0.05 ⁇ m
  • the composition of the obtained material is 10 mass. % USP ⁇ B, 85.0 mass. %> cubic nitride of boron, 5.0 mass. %> hexagonal boron.
  • the method of pressure control in hot alkali USPB removes the hexagonal nitride of boron ..
  • the composition of the obtained material is 10 mass. % UDP ”, 43.0 mass. %> cubic nitride of boron, 47.0 mass. %> hexagonal boron. Hot pressure removes hexagonal boron nitride ..
  • the product of ⁇ product is 53.0 mass. %>. cubic nitride of boron - 43.0 mass%>. Particle sizes of boron nitride - 1.6 ⁇ 0.1 ⁇ m
  • the composition of the obtained material is 10 mass. % UDP ⁇ , 40.0 mass. %> cubic nitride of boron, 50.0 mass. %> hexagonal boron. Hot pressure eliminates the hexagonal nitride of the boron.
  • Table b Examples of the final implementation of the method for the production of synthetic overvoltage materials that contain USP and cubic nitride.
  • the composition of the obtained material is 10 mass. % UDP ”, 32.0 wt. %> cubic nitride of boron, 58.0 mass. %> hexagonal boron.
  • the method of pressure in hot alkali removes the hexagonal nitride of boron ..
  • the composition of the obtained material is 10 mass. % UDP ”, 20.0 mass. %> cubic nitride of boron, 70.0 mass. %> hexagonal boron. Hot pressure eliminates the hexagonal nitride of the boron. Sulphate product ⁇ - 30.0 mass. %>., cubic nitride of boron - 20.0 mass%>. Particle sizes of boron nitride of boron - 0.2 ⁇ 0.02 ⁇ m
  • the claimed s ⁇ s ⁇ b ⁇ m was ⁇ veden sin ⁇ ez S ⁇ ⁇ me ⁇ di ⁇ e ⁇ bychn ⁇ g ⁇ ⁇ a ⁇ ali ⁇ iches ⁇ g ⁇ sin ⁇ eza on ⁇ m same ⁇ b ⁇ ud ⁇ vanii and ⁇ i ⁇ e ⁇ same ⁇ ezhima ⁇ , ch ⁇ and ⁇ ivedenny ⁇ ⁇ ime ⁇ a ⁇ , n ⁇ without introducing shi ⁇ u UD ⁇ , UD ⁇ B, UP ⁇ , UDP ⁇ and ⁇ bychny ⁇ ⁇ a ⁇ aliza ⁇ v.
  • the ultrafine particles of the cubic material are not only catalytic compounds of C ⁇ , but they are also constituents of the cementitious (Fig. 4 (photo)))
  • the output of the finished product increases significantly (up to 96-100%> at 20-35%> for

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Ceramic Products (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Cutting Tools, Boring Holders, And Turrets (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

L'invention concerne une technique de fabrication de matériaux superdurs (MUS) et notamment la synthèse de diamants, de nitrure de bore, de matériaux polycristallins et composites sur la base de ces derniers, la fabrication de poudres et d'instruments contenant ces matériaux et utilisés notamment pour fabriquer des outils abrasifs ou coupants. L'invention vise un procédé permettant la fabrication de matériaux superdurs qui assurerait un rendement élevé de MUS à des températures plus basses et à une pression peu élevée, sans catalyseurs. Le procédé de l'invention est caractérisé en ce que l'on utilise en tant qu'additifs de formation de cristaux une poudre ultradispersée d'un matériau ayant une structure cubique. Dans un mode de réalisation, on utilise en tant que poudre ultradispersée d'un matériau ayant une structure cubique une poudre ultradispersée de diamant. La synthèse du MUS (diamant et/ou c-BN) est conduite à des températures extrêmement basses (inférieures de 800 à 1000 à celles nécessaires lors de la synthèse catalytique) et à une pression relativement basse. Le rendement en terme de MUS se trouve augmenté jusqu'à 96-100 % sans être accompagné d'additifs étrangers, ce qui permet de fabriquer des outils ayant une structure et une caractéristique désirées. L'invention permet d'économiser sensiblement l'énergie et les matériaux coûteux.
PCT/EA2003/000002 2002-04-18 2003-04-17 Procede de synthese de materiaux superdurs WO2003086971A1 (fr)

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AU2003236208A AU2003236208A1 (en) 2002-04-18 2003-04-17 Method for synthesising superhard materials

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EA200200576 2002-04-18
EA200200576A EA006011B1 (ru) 2002-04-18 2002-04-18 Способ синтеза сверхтвердых материалов

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8226922B2 (en) * 2003-12-11 2012-07-24 Sumitomo Electric Industries, Ltd. High-hardness conductive diamond polycrystalline body and method of producing the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EA008238B1 (ru) * 2005-01-04 2007-04-27 Игорь Михайлович Старченко Способ синтеза армированных сверхтвердых материалов

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4273561A (en) * 1975-08-27 1981-06-16 Fernandez Moran Villalobos Hum Ultrasharp polycrystalline diamond edges, points, and improved diamond composites, and methods of making and irradiating same
JPH05132704A (ja) * 1991-11-11 1993-05-28 Kobe Steel Ltd 高硬度微細結晶焼結体およびその製造方法
RU2050319C1 (ru) * 1993-02-26 1995-12-20 Акционерное общество закрытого типа "Меганит" Шихта для изготовления композиционного поликристаллического материала
RU2102317C1 (ru) * 1991-06-27 1998-01-20 Акционерное общество Терского завода алмазного инструмента Способ извлечения алмазов из отработанного алмазного инструмента
RU2142407C1 (ru) * 1998-06-25 1999-12-10 Химический факультет Московского государственного университета им.М.В.Ломоносова Способ очистки кубического нитрида бора

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4273561A (en) * 1975-08-27 1981-06-16 Fernandez Moran Villalobos Hum Ultrasharp polycrystalline diamond edges, points, and improved diamond composites, and methods of making and irradiating same
RU2102317C1 (ru) * 1991-06-27 1998-01-20 Акционерное общество Терского завода алмазного инструмента Способ извлечения алмазов из отработанного алмазного инструмента
JPH05132704A (ja) * 1991-11-11 1993-05-28 Kobe Steel Ltd 高硬度微細結晶焼結体およびその製造方法
RU2050319C1 (ru) * 1993-02-26 1995-12-20 Акционерное общество закрытого типа "Меганит" Шихта для изготовления композиционного поликристаллического материала
RU2142407C1 (ru) * 1998-06-25 1999-12-10 Химический факультет Московского государственного университета им.М.В.Ломоносова Способ очистки кубического нитрида бора

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8226922B2 (en) * 2003-12-11 2012-07-24 Sumitomo Electric Industries, Ltd. High-hardness conductive diamond polycrystalline body and method of producing the same
US9192899B2 (en) 2003-12-11 2015-11-24 Sumitomo Electric Industries, Ltd. High-hardness conductive diamond polycrystalline body and method of producing the same

Also Published As

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EA200200576A1 (ru) 2003-10-30
AU2003236208A1 (en) 2003-10-27
EA006011B1 (ru) 2005-08-25
UA76963C2 (en) 2006-10-16

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