WO2003081306A1 - Resonateur optique constitue d'un cristal photonique tridimensionnel a defauts ponctuels - Google Patents

Resonateur optique constitue d'un cristal photonique tridimensionnel a defauts ponctuels Download PDF

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Publication number
WO2003081306A1
WO2003081306A1 PCT/JP2003/003764 JP0303764W WO03081306A1 WO 2003081306 A1 WO2003081306 A1 WO 2003081306A1 JP 0303764 W JP0303764 W JP 0303764W WO 03081306 A1 WO03081306 A1 WO 03081306A1
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Prior art keywords
defect
photonic crystal
point
point defect
optical resonator
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PCT/JP2003/003764
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English (en)
Japanese (ja)
Inventor
Susumu Noda
Makoto Okano
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Japan Science And Technology Corporation
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Publication of WO2003081306A1 publication Critical patent/WO2003081306A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12002—Three-dimensional structures
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash

Definitions

  • the present invention relates to an optical resonator applicable to a light source or the like of optical wavelength division multiplex communication.
  • a photonic crystal is an optically functional material having a periodic refractive index distribution, and forms a band structure for photon energy. In particular, it is characterized by the formation of an energy region (photonic band gap) where light cannot be propagated.
  • WDM Wavelength Division Multiplexing
  • OTDM Optical Time Division Multiplexing
  • a light source is required for each of a plurality of wavelengths.
  • light sources that use semiconductor lasers with different oscillation wavelengths for each wavelength and those that combine a white light source with an optical demultiplexer are used.
  • all of these methods inevitably increase the size of the apparatus and are inefficient.
  • a photonic crystal can be used as an optical resonator. Since the optical resonator can confine light, the optical resonator can be used as a light source by providing appropriate light extraction means. Therefore, by using a photo Yuk crystal as a light source, the wavelength division multiplexing communication device can be significantly reduced in size.
  • Photonic crystals as optical resonators have been two-dimensional photonic crystals (For example, described in JP-A-2001-272555).
  • the use of not only an optical resonator but also a wavelength demultiplexing device by introducing a point defect that disturbs the period of the photonic crystal is being studied.
  • two-dimensional photonic crystals have the advantage of being relatively easy to manufacture, considering the efficiency of the optical resonator, a three-dimensional system with a high effect of confining light within the resonator is more desirable.
  • an optical resonator when used, for example, as a light source for wavelength division multiplexing optical communication, it will not be practical unless the emission wavelength can be set to any desired value.
  • the present invention has been made to solve such a problem, and an object of the present invention is to provide a specific method for controlling the resonance wavelength of an optical resonator using a point defect three-dimensional photonic crystal. To provide. Disclosure of the invention
  • the first aspect of the point defect three-dimensional photonic crystal optical resonator according to the present invention which has been made to solve the above problems, is as follows.
  • a plurality of stripe layers in which a plurality of rods are arranged in parallel and periodically at a predetermined in-plane period are stacked in parallel, and each rod belonging to each stripe layer is associated with each rod belonging to the nearest stripe layer. At right angles, each rod belonging to each stripe layer is parallel to each rod belonging to the stripe layer separated by two layers and is shifted by 1/2 of the above-mentioned in-plane period.
  • a plurality of stripe layers in which a plurality of openings are arranged in parallel and periodically at a predetermined in-plane period are stacked in parallel, and each rod belonging to each stripe layer belongs to the nearest stripe layer.
  • a main body comprising a three-dimensional photonic crystal orthogonal to the rods, wherein each rod belonging to each stripe layer is parallel to each rod belonging to the stripe layer separated by two layers and is shifted by half of the in-plane period;
  • a three-dimensional photonic crystal serving as a base of the optical resonator of the present invention will be described.
  • a three-dimensional photonic crystal is composed of a set of rods. By arranging such rods in parallel at a predetermined period (in-plane period) a, one layer is formed. This is called a stripe layer.
  • a three-dimensional crystal is formed by laminating stripe layers, but in order to form a photonic band gap, the positional relationship between rods belonging to each stripe layer and rods belonging to other stripe layers is important. is there.
  • each rod belonging to each stripe layer is arranged so as to be orthogonal to each rod belonging to the nearest stripe layer.
  • each rod belonging to each stripe layer is parallel to each rod belonging to the next closest stripe layer to the above-described nearest stripe layer (that is, two stripe layers apart), and has a length a in the width direction of the rod.
  • a periodic refractive index distribution is formed by being displaced by / 2. Due to such a periodic refractive index distribution, an energy range where light cannot exist (photonic band gap) is formed in the three-dimensional photonic crystal.
  • a point defect is introduced into one rod in a three-dimensional photonic crystal having such periodicity.
  • the point defects introduced in this way cause disturbances in the periodic refractive index distribution in the three-dimensional photonic crystal, and light is emitted in the photonic band gap. Possible energy levels (defect levels) are formed. That is, a three-dimensional photonic crystal having such a point defect becomes an optical resonator. If a light emitter is introduced into this point defect, the optical resonator becomes a light source.
  • a method of removing a part of a rod and placing an object with a different shape or refractive index, attaching a member to the rod without losing the rod, or changing the shape of the rod itself can be used.
  • a point defect is used as a light source, it is necessary to introduce a luminous body into the defective portion, but the luminous body itself may be used as a defective member.
  • the energy value of the defect level can be set with a high degree of freedom depending on the size of the defect member among the parameters relating to the point defect.
  • the energy value of the defect level can be set with a high degree of freedom depending on the size of the defect member among the parameters relating to the point defect.
  • simply controlling the size of the defective member may reduce the resonance frequency interval.
  • a level used as a resonator hereinafter referred to as a used level
  • a used level may be close to an adjacent level, and the used level may be affected by the adjacent level. Therefore, in the present invention, it has been clarified that the influence of an adjacent level can be avoided by adjusting the shape and displacement of the defective member by the following method.
  • the shape of the defective member will be described. Considering the use of lithography when manufacturing rods and defective members, the defective members should be at the same height as the rods (in the stacking direction), and the planar shape at the point defect point should be different from the rod portion (rectangular shape). Shape, oval, etc.).
  • the defective member has a shape anisotropy whose width ⁇ ⁇ is larger than the length A y. Further, the value of ⁇ / Ay is preferably 1.5 or more, more preferably 2 or more.
  • the displacement of a point defect indicates the positional relationship between the point defect and the rods of the upper and lower stripe layers (hereinafter referred to as adjacent layers) adjacent to the stripe layer to which the point defect belongs.
  • the energy value of the defect level also depends on the displacement.
  • the greater the displacement the greater the distance between the defect level and the adjacent level.
  • the displacement By setting the displacement to 0.1a or more, the energy difference becomes practically sufficient. Since the rods of the upper and lower adjacent layers are shifted from each other by the length a / 2, if the displacement for one adjacent layer exceeds 0.25a, the displacement for the other adjacent layer is 0.25a or less. become. That is, the maximum value of the above displacement is 0.25a, and at that time, the interval between the defect level and the adjacent level becomes maximum.
  • the energy value of the defect level can be set with a high degree of freedom by appropriately setting the size, shape, and displacement of the point defect (defect member).
  • a plurality of point defects (defect members) having different sizes and / or shapes and / or displacements at different positions in the three-dimensional photonic crystal a plurality of point defects each having a different defect level energy value can be obtained.
  • Optical resonator having
  • the Q value in the optical resonator is obtained by dividing the energy of light stored in the optical resonator by the energy of light lost from the resonator per unit time, and multiplying by the resonance angular frequency. When this value exceeds about 1000, laser oscillation can be obtained at room temperature.
  • the crystal size should be large enough in all three-dimensional directions. However, it is necessary to pay attention to the following points.
  • the three-dimensional photonic crystal of the present invention is manufactured by forming stripe layers one by one and stacking them, it is relatively easy to enlarge the crystal in the in-plane direction of the stripe layer.
  • increasing the crystal size in the stacking direction increases the manufacturing cost by increasing the number of stacking steps. From this point, it is not preferable to increase the number of stripe layers too much.
  • the number of the stripe layers is four or more both above and below the stripe layer to which the point defect belongs. Furthermore, when the number of the stripe layers is 6 or more above and below the stripe layer to which the point defect belongs, the Q value becomes close to 1000. The appropriate number of layers may be determined in consideration of this result and the manufacturing cost.
  • the photonic band gap width is large.
  • the parameters to consider include the in-plane and out-of-plane period ratio and the in-plane rod filling factor.
  • the term “out-of-plane period ratio” is the ratio z / a of the size (out-of-plane period) z of one period in the stacking direction (one period corresponds to four stripe layers) to the in-plane period a in the stripe layer.
  • the filling rate of the rod is the value w / a obtained by dividing the width w of the rod by the in-plane period a.
  • the filling ratio w / a When the filling ratio w / a is variously changed with respect to various values of the in-plane / out-of-plane period ratio z / a, the filling ratio w / a is 0.275 to 0, regardless of the in-plane / out-of-plane period ratio z / a. In the range of 30, the photonic band gap width becomes maximum. When the filling ratio w / a is outside the range of 0.20 to 0.40, the photonic band gap width sharply decreases as the filling ratio w / a departs from the range.
  • the in-plane / out-of-plane period ratio z / a is obtained when the filling ratio w / a is 0.20 to 0.30.
  • a point defect is introduced into a 3D photonic crystal, and the size, shape, and displacement of the point defect (defect member) placed there, and the in-plane / out-of-plane period ratio z / a of the 3D photonic crystal, filling factor w / a
  • the resonance frequency can be set arbitrarily, and the unity of the frequency can be improved.
  • laser oscillation becomes possible by setting these parameters appropriately. Therefore, for example, when the optical resonator according to the present invention is used as a light source, the light source has a desired emission wavelength and a high wavelength uniformity, and is optimal as a light source for wavelength division multiplexing optical communication. Of course, it can also be used as a light source for various optical devices.
  • FIG. 1 is a configuration example of a three-dimensional photonic crystal that is a base of the three-dimensional photonic crystal optical resonator of the present invention.
  • FIG. 3 is a view showing an example of the shape of a defective member introduced into a three-dimensional photo-uck crystal.
  • FIG. 4 is a diagram showing an example of displacement of a defective member introduced into a three-dimensional photonic crystal.
  • Fig. 5 A graph showing the displacement dependence of the relationship between the size of square defects and the resonance frequency.
  • Fig. 7 is a graph showing the displacement dependence of the relationship between the size of the defective member and the resonance frequency in the case of a rectangular defect with ⁇ / ⁇ of 1.5.
  • Fig. 8 is a graph showing the displacement dependence of the relationship between the size of the defective member and the resonance frequency in the case of a rectangular defect where ⁇ / ⁇ y is 2.0.
  • Fig. 9 is a graph showing the displacement dependence of the relationship between the size of the defective member and the resonance frequency for a rectangular defect with ⁇ / Ay of 2.5.
  • FIG. 10 is a graph showing the results of calculating the displacement dependence of the relationship between the size of a defective member and the resonance frequency in the case of a rectangular defect having ⁇ / ⁇ of 2.0 by the time domain difference method.
  • FIG. 11 is a graph showing ⁇ V in a rectangular defect.
  • FIG. 15 is a configuration diagram of a resonator having a plurality of point defects arranged at different displacements.
  • Fig. 16 A table showing the normalized frequency of each point defect when a plurality of point defects with different displacements are arranged.
  • FIG. 17 is a diagram schematically showing the resonance wavelength of each point defect when a plurality of point defects having different displacements are arranged.
  • FIG. 18 is a graph showing the dependence of the photonic band gap width on the in-plane / out-of-plane period ratio z / a and the filling factor w / a. '
  • Fig. 19 A graph showing the dependence of the photonic band gap width on the out-of-plane ratio z / a.
  • Fig. 1 shows an example of the configuration of a three-dimensional photonic crystal serving as a parent.
  • the rod shown in the figure is the rod 11.
  • One of the arrows on the right side of the figure corresponds to one stripe layer.
  • a is the length (in-plane period) of one period of the rod array in the stripe layer.
  • z is the length of one period (out-of-plane period) in the stacking direction composed of four stripe layers.
  • w represents the width of the rod
  • h represents the length of the rod.
  • the rod is made of, for example, a III-V group semiconductor (eg, GaAs, InP, etc.), which is a substance that is transparent to infrared rays, often used in optical communications, and that can be used as a light-emitting material. can do.
  • Fig. 2 shows the results of calculating the energy band using the plane wave expansion method to confirm that the crystal as shown in Fig. 1 has a photonic band gap.
  • the in-plane / out-of-plane period ratio z / a l.2
  • the filling ratio w / a 0.25
  • the rod refractive index were 3.309.
  • FIG. 2 represents the normalized frequency obtained by multiplying the frequency of light by a (c is the speed of light) to make it dimensionless, and the vertical axis on the right side shows the center energy of the photonic band gap at 0.8e. V (the energy of light with a wavelength of 1.55 ⁇ commonly used in optical multiplex communication).
  • the horizontal axis in FIG. 2 represents the direction in the wave number space. From this figure, it can be seen that the energy gap is open in all directions in the wavenumber space when the normalized frequency is in the range of 0.38 to 0.45. This is the photonic bandgap.
  • point defects 12 are introduced into the parent crystal.
  • the point defect is formed by placing a defective member in a part of the mouth.
  • the defective member was a rectangular parallelepiped having the same height as the rod, and the material was the same as that of the rod. Even when the material (refractive index) is different from that of the rod, the following results are the same.
  • the effects of various parameters of this defective member on various characteristics such as the energy level of point defects will be examined.
  • the planar shape of the defective member was examined when the width ⁇ shown in FIG. 3 (2) is equal to the length A y and when ⁇ ⁇ > A y shown in FIG. 3 (3).
  • Fig. 4 shows the case where there is no shift in the y direction
  • Figs. 4 (2) and (3) show the case where the shift is in the y direction.
  • the displacement in the X direction was also examined, it was found that in this case, the gap between the defect levels tends to be narrowed by increasing the displacement. Therefore, only the displacement in the y direction is considered below.
  • Fig. 5 shows the calculation results when the values were changed in three ways, 5a and 0.25a.
  • a time-domain difference method with higher accuracy than the plane wave expansion method was used.
  • the horizontal axis in FIG. 5 represents the size of the defective member.
  • the white area in the background of the figure is the area with a photonic band gap.
  • FIG. 6 shows the minimum value ⁇ V ⁇ of the interval between the defect level having the lowest frequency and the other levels.
  • the “other levels” are the band edge on the high-frequency side on the left side of the X mark, the adjacent levels between the X mark and the + mark, On the right side of the mark is the band edge on the low frequency side.
  • the broken line indicates the distance between the defect level and the band edge on the side adjacent to the defect level. In the calculated range, when the displacement is 0.0a, the "other levels” are all adjacent levels, and when the displacement is 0.125a, the "other levels” are the band edges on the high frequency side. It does not become.
  • Figure 6 shows that ⁇ v » in is largest when the displacement is 0.25a.
  • Figs. 7 to 9 show the results of calculations using the plane wave expansion method for rectangular defects with ⁇ / Ay of 1.5, 2.0, and 2.5.
  • the difference between the defect level having the lowest frequency and the defect level adjacent thereto is larger than that of the square defect.
  • x / A y increases, the difference increases.
  • Crossing of defect levels was observed at the time of a square defect.When the displacement was 0.0a, the difference from the adjacent defect level increased with the increase of ⁇ / Ay, At that time, no intersection was seen.
  • FIG. 10 The result of the above calculation in is calculated using the time domain difference method. Comparing this figure with Fig. 5 to compare the difference between a rectangular defect and a square defect, it is very similar to Fig. 5 with the adjacent levels removed. I understand. This is because, when the value of ⁇ / Ay is larger than 1, the adjacent level is suppressed and shifted to the higher frequency side, but no such shift occurs in the used level and the next adjacent level. It depends.
  • the difference between the adjacent level and the used level is that the electromagnetic field distribution in the adjacent level spreads in the y direction, whereas the electromagnetic field distribution in the used level is strongly localized at the center of the point defect. by.
  • the symbols X and + in the figure and the meaning of the broken lines are the same as in FIG. It can be seen that ⁇ V ⁇ is larger in each case of displacement than in the case of square defects.
  • the resonator according to the present invention contributes to downsizing of a device such as wavelength division multiplexing optical communication.
  • FIG. 15 a three-dimensional photonic crystal provided with a plurality of defect members having the same shape and size and different displacements will be examined.
  • Such a configuration is convenient for mass production because there is only one type of defective member.
  • Ad the displacement of each defect differs by a constant interval Ad, but it is needless to say that only the displacement corresponding to the target wavelength may be introduced.
  • the control can be performed over a range of 1.565 ⁇ 111 and a bandwidth of 0.04 m.
  • the wavelength band actually used in optical multiplex communication is 1.530 ⁇ ! Since it is ⁇ 1.565 ⁇ m, the optical resonator according to the present invention can cope with it only by adjusting the displacement of the point defect.
  • the displacements are set to be equally spaced within the range of 0.0a to 0.25a. This makes it possible to obtain light of a plurality of wavelengths in which the wavelengths are equally spaced in the entire wavelength band.
  • light of a plurality of wavelengths within a given wavelength band in optical multiplex communication can be generated by one light source, and each wavelength is equally spaced. As a result, the wavelength band can be used effectively.
  • the size of the point defect By appropriately setting the size of the point defect in addition to the displacement of the point defect, it is possible to introduce a point defect optical resonator having a plurality of different resonance frequencies in a wider bandwidth. However, it cannot produce a bandwidth wider than the photonic bandgap.
  • the structural parameters of the parent three-dimensional photonic crystal for controlling the size of the photonic band gap are studied.
  • the target parameters are the in-plane / out-of-plane period ratio z / a for the lamination period of the stripe layer and the rod filling ratio w / a in the stripe layer.
  • FIG. 18 shows the dependence of the photonic band gap width on the in-plane / out-of-plane period ratio z / a and the filling factor w / a.
  • the vertical axis represents the photonic band gap width divided by its center frequency in percentage. Focusing on the filling ratio w / a, if the filling ratio w / a is out of the range of 0.2 to 0.4 for any value of the in-plane / out-of-plane period ratio z / a, as the distance from the range increases, the photo The Yuc band gap width decreases sharply. From this result, it is understood that the filling ratio w / a is preferably set to 0.2 to 0.4.
  • the dependence of the photonic band gap width on the in-plane and out-of-plane period ratio z / a is calculated as follows. Shown in the figure.

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Abstract

L'invention porte sur un cristal photonique tridimensionnel à défauts ponctuels pouvant produire la résonance d'une longueur d'onde lorsqu'on y introduit un élément défectueux de manière à former un défaut ponctuel (12), et par-là, un défaut de niveau dans la bande interdite photonique. Ainsi, la lumière dont la longueur d'onde correspondant à l'énergie du défaut de niveau ne peut exister que dans le défaut ponctuel, et le cristal fonctionne en résonateur optique pour ladite longueur d'onde. En tant que cristal tridimensionnel, le résonateur subit moins de pertes d'énergie depuis le défaut ponctuel (12) et présente de ce fait un très bon rendement. Les paramètres d'un élément défectueux, tels que sa taille, sa forme et sa position, si choisis correctement, permettent de déterminer la longueur d'onde de résonance. Lorsque les paramètres d'un élément défectueux introduisent plusieurs défauts ponctuels différents dans un cristal photonique tridimensionnel, on peut obtenir des résonances de plusieurs longueurs d'onde, ce qui contribue à réduire la taille de dispositifs, utilisables par exemple dans des communications optiques à multiplexage de longueurs d'onde.
PCT/JP2003/003764 2002-03-26 2003-03-26 Resonateur optique constitue d'un cristal photonique tridimensionnel a defauts ponctuels WO2003081306A1 (fr)

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JP2002-86219 2002-03-26
JP2002207726A JP2004006567A (ja) 2002-03-26 2002-07-17 点欠陥３次元フォトニック結晶光共振器
JP2002-207726 2002-07-17

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JP4956119B2 (ja) * 2006-09-27 2012-06-20 キヤノン株式会社 発光素子およびそれを用いた表示素子
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JP5372682B2 (ja) * 2009-09-29 2013-12-18 独立行政法人科学技術振興機構 表面効果３次元フォトニック結晶

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