WO2003075098A3 - Vermeidung von kontamination auf optischen elementen und reinigung dieser elemente - Google Patents
Vermeidung von kontamination auf optischen elementen und reinigung dieser elemente Download PDFInfo
- Publication number
- WO2003075098A3 WO2003075098A3 PCT/EP2003/002372 EP0302372W WO03075098A3 WO 2003075098 A3 WO2003075098 A3 WO 2003075098A3 EP 0302372 W EP0302372 W EP 0302372W WO 03075098 A3 WO03075098 A3 WO 03075098A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- contamination
- elements
- optical elements
- cleaning
- photocurrent
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
Landscapes
- Physics & Mathematics (AREA)
- Epidemiology (AREA)
- Health & Medical Sciences (AREA)
- Public Health (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Environmental & Geological Engineering (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03711941A EP1481287A2 (de) | 2002-03-07 | 2003-03-07 | Vorrichtung, euv-lithographiegerät und verfahren zur vermeidung und reinigung von kontamination auf optischen elementen |
US10/506,555 US7060993B2 (en) | 2002-03-07 | 2003-03-07 | Device, EUV-lithographic device and method for preventing and cleaning contamination on optical elements |
KR10-2004-7013943A KR20040102031A (ko) | 2002-03-07 | 2003-03-07 | 장치, euv-리소그래픽 장치 및 광학요소의 오염 방지및 정제 방법 |
CN038055147A CN1639643B (zh) | 2002-03-07 | 2003-03-07 | 用于避免和清洁光学元件上污染物的装置,euv石版印刷设备和方法 |
AU2003218706A AU2003218706A1 (en) | 2002-03-07 | 2003-03-07 | Prevention of contamination of optical elements and cleaning said elements |
JP2003573498A JP2005519333A (ja) | 2002-03-07 | 2003-03-07 | 光学要素上の汚染を防止し、クリーニングするためのデバイス、euvリソグラフィーデバイスおよび方法 |
US11/375,267 US7462842B2 (en) | 2002-03-07 | 2006-03-14 | Device, EUV lithographic device and method for preventing and cleaning contamination on optical elements |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10209493A DE10209493B4 (de) | 2002-03-07 | 2002-03-07 | Verfahren zur Vermeidung von Kontamination auf optischen Elementen, Vorrichtung zur Regelung von Kontamination auf optischen Elementen und EUV-Lithographievorrichtung |
DE10209493.4 | 2002-03-07 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10506555 A-371-Of-International | 2003-03-07 | ||
US11/375,267 Continuation US7462842B2 (en) | 2002-03-07 | 2006-03-14 | Device, EUV lithographic device and method for preventing and cleaning contamination on optical elements |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003075098A2 WO2003075098A2 (de) | 2003-09-12 |
WO2003075098A3 true WO2003075098A3 (de) | 2004-02-19 |
Family
ID=27770969
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2003/002372 WO2003075098A2 (de) | 2002-03-07 | 2003-03-07 | Vermeidung von kontamination auf optischen elementen und reinigung dieser elemente |
Country Status (8)
Country | Link |
---|---|
US (2) | US7060993B2 (de) |
EP (1) | EP1481287A2 (de) |
JP (1) | JP2005519333A (de) |
KR (1) | KR20040102031A (de) |
CN (1) | CN1639643B (de) |
AU (1) | AU2003218706A1 (de) |
DE (1) | DE10209493B4 (de) |
WO (1) | WO2003075098A2 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8158959B2 (en) | 2009-02-12 | 2012-04-17 | Gigaphoton Inc. | Extreme ultraviolet light source apparatus |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
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DE10150874A1 (de) * | 2001-10-04 | 2003-04-30 | Zeiss Carl | Optisches Element und Verfahren zu dessen Herstellung sowie ein Lithographiegerät und ein Verfahren zur Herstellung eines Halbleiterbauelements |
DE10209493B4 (de) * | 2002-03-07 | 2007-03-22 | Carl Zeiss Smt Ag | Verfahren zur Vermeidung von Kontamination auf optischen Elementen, Vorrichtung zur Regelung von Kontamination auf optischen Elementen und EUV-Lithographievorrichtung |
KR100585472B1 (ko) * | 2002-09-30 | 2006-06-07 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피장치 및 디바이스 제조방법 |
EP1403715A3 (de) * | 2002-09-30 | 2006-01-18 | ASML Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung eines Artikels |
DE10309084A1 (de) * | 2003-03-03 | 2004-09-16 | Carl Zeiss Smt Ag | Reflektives optisches Element und EUV-Lithographiegerät |
US20070285643A1 (en) * | 2004-03-05 | 2007-12-13 | Carl Zeiss Smt Ag | Method For Manufacturing Reflective Optical Element, Reflective Optical Elements, Euv-Lithography Apparatus And Methods For Operating Optical Elements And Euv-Lithography Apparatus, Methods For Determining The Phase Shift, Methods For Determining The Layer Thickness, And Apparatuses For Carrying Out The Methods |
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US7381950B2 (en) * | 2004-09-29 | 2008-06-03 | Texas Instruments Incorporated | Characterizing dimensions of structures via scanning probe microscopy |
US7355672B2 (en) | 2004-10-04 | 2008-04-08 | Asml Netherlands B.V. | Method for the removal of deposition on an optical element, method for the protection of an optical element, device manufacturing method, apparatus including an optical element, and lithographic apparatus |
JP4539335B2 (ja) * | 2005-01-12 | 2010-09-08 | 株式会社ニコン | 多層膜反射鏡、euv露光装置、及び多層膜反射鏡におけるコンタミネーションの除去方法 |
US7868304B2 (en) * | 2005-02-07 | 2011-01-11 | Asml Netherlands B.V. | Method for removal of deposition on an optical element, lithographic apparatus, device manufacturing method, and device manufactured thereby |
US7394083B2 (en) * | 2005-07-08 | 2008-07-01 | Cymer, Inc. | Systems and methods for EUV light source metrology |
US7561247B2 (en) * | 2005-08-22 | 2009-07-14 | Asml Netherlands B.V. | Method for the removal of deposition on an optical element, method for the protection of an optical element, device manufacturing method, apparatus including an optical element, and lithographic apparatus |
JP2007067344A (ja) * | 2005-09-02 | 2007-03-15 | Canon Inc | 露光装置および方法ならびにデバイス製造方法 |
JP4599342B2 (ja) * | 2005-12-27 | 2010-12-15 | エーエスエムエル ネザーランズ ビー.ブイ. | 光学装置、リソグラフィ装置、および、デバイス製造方法 |
US8507879B2 (en) * | 2006-06-08 | 2013-08-13 | Xei Scientific, Inc. | Oxidative cleaning method and apparatus for electron microscopes using UV excitation in an oxygen radical source |
US20070284541A1 (en) * | 2006-06-08 | 2007-12-13 | Vane Ronald A | Oxidative cleaning method and apparatus for electron microscopes using UV excitation in a oxygen radical source |
GB0611648D0 (en) * | 2006-06-13 | 2006-07-19 | Boc Group Plc | Method of controlling contamination of a surface |
DE102006044591A1 (de) | 2006-09-19 | 2008-04-03 | Carl Zeiss Smt Ag | Optische Anordnung, insbesondere Projektionsbelichtungsanlage für die EUV-Lithographie, sowie reflektives optisches Element mit verminderter Kontamination |
JP2008277585A (ja) * | 2007-04-27 | 2008-11-13 | Canon Inc | 露光装置の洗浄装置及び露光装置 |
DE102007037942A1 (de) | 2007-08-11 | 2009-02-19 | Carl Zeiss Smt Ag | Optische Anordnung, Projektionsbelichtungsanlage und Verfahren zum Bestimmen der Dicke einer Kontaminationsschicht |
DE102008041628A1 (de) * | 2007-09-14 | 2009-03-19 | Carl Zeiss Smt Ag | Verfahren zur Reinigung von Vakuumkammern und Vakuumkammer |
EP2091068A1 (de) * | 2008-02-15 | 2009-08-19 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Sensor, Überwachungssystem und Verfahren zum Nachweis einer Substanz in einer Gasprobe |
JP5171422B2 (ja) * | 2008-06-19 | 2013-03-27 | ルネサスエレクトロニクス株式会社 | 感光性組成物、これを用いたパターン形成方法、半導体素子の製造方法 |
US20110001952A1 (en) * | 2008-09-25 | 2011-01-06 | Eran & Jan, Inc | Resist exposure and contamination testing apparatus for EUV lithography |
US8349125B2 (en) * | 2009-07-24 | 2013-01-08 | Xei Scientific, Inc. | Cleaning device for transmission electron microscopes |
JP2012114140A (ja) * | 2010-11-22 | 2012-06-14 | Renesas Electronics Corp | 露光方法および露光装置 |
US8399868B2 (en) * | 2011-02-15 | 2013-03-19 | Sematech Inc. | Tools, methods and devices for mitigating extreme ultraviolet optics contamination |
NL2009846A (en) * | 2011-12-23 | 2013-06-26 | Asml Netherlands Bv | Radiation source and method for lithographic apparatus and device manufacture. |
US9453801B2 (en) | 2012-05-25 | 2016-09-27 | Kla-Tencor Corporation | Photoemission monitoring of EUV mirror and mask surface contamination in actinic EUV systems |
DE102012222466A1 (de) | 2012-12-06 | 2014-06-12 | Carl Zeiss Smt Gmbh | Reflektives optisches Element für die EUV-Lithographie |
DE102012222451A1 (de) * | 2012-12-06 | 2014-06-26 | Carl Zeiss Smt Gmbh | Reflektives optisches Element für die EUV-Lithographie |
DE102013201193A1 (de) | 2013-01-25 | 2014-07-31 | Carl Zeiss Smt Gmbh | Verfahren zum Bestimmen der Phasenlage und/oder der Dicke einer Kontaminationsschicht an einem optischen Element und EUV-Lithographievorrichtung |
US9389180B2 (en) | 2013-02-15 | 2016-07-12 | Kla-Tencor Corporation | Methods and apparatus for use with extreme ultraviolet light having contamination protection |
US8764905B1 (en) * | 2013-03-14 | 2014-07-01 | Intel Corporation | Cleaning organic residues from EUV optics and masks |
US10953441B2 (en) * | 2013-03-15 | 2021-03-23 | Kla Corporation | System and method for cleaning optical surfaces of an extreme ultraviolet optical system |
US20150097485A1 (en) * | 2013-10-08 | 2015-04-09 | XEI Scientific Inc. | Method and apparatus for plasma ignition in high vacuum chambers |
DE102014114572A1 (de) * | 2014-10-08 | 2016-04-14 | Asml Netherlands B.V. | EUV-Lithographiesystem und Betriebsverfahren dafür |
KR102346227B1 (ko) | 2014-11-19 | 2021-12-31 | 삼성전자주식회사 | 극자외선 광 생성 장치, 시스템 및 극자외선 광 생성 장치의 사용 방법 |
KR102211898B1 (ko) | 2014-11-27 | 2021-02-05 | 삼성전자주식회사 | 노광 장치용 액체 누출 감지 장치 및 방법 |
JP2015127837A (ja) * | 2015-04-03 | 2015-07-09 | ルネサスエレクトロニクス株式会社 | 露光方法および露光装置 |
NL2022644A (en) | 2018-03-05 | 2019-09-10 | Asml Netherlands Bv | Prolonging optical element lifetime in an euv lithography system |
US11979971B2 (en) * | 2018-06-29 | 2024-05-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | EUV light source and apparatus for lithography |
DE102019200208A1 (de) * | 2019-01-10 | 2020-07-16 | Carl Zeiss Smt Gmbh | Verfahren zum in situ dynamischen Schutz einer Oberfläche und optische Anordnung |
US11273794B2 (en) * | 2019-07-18 | 2022-03-15 | GM Global Technology Operations LLC | Optical surface contaminant detection |
JP2021071543A (ja) * | 2019-10-29 | 2021-05-06 | ギガフォトン株式会社 | 極端紫外光集光ミラー、極端紫外光生成装置、及び電子デバイスの製造方法 |
DE102019219024A1 (de) | 2019-12-06 | 2021-06-10 | Carl Zeiss Smt Gmbh | Verfahren zur Vermeidung einer Degradation eines optischen Elements, Projektionssystem, Beleuchtungssystem sowie Projektionsbelichtungsanlage |
WO2023110313A1 (en) | 2021-12-17 | 2023-06-22 | Asml Netherlands B.V. | Method and system for preventing degradation of a material of an optical component for euv-lithography |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0987601A2 (de) * | 1998-09-17 | 2000-03-22 | Nikon Corporation | Belichtungsapparat und Belichtungsverfahren unter Verwendung derselben |
JP2000346817A (ja) * | 1999-06-07 | 2000-12-15 | Nikon Corp | 測定装置、照射装置および露光方法 |
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JPS6251224A (ja) | 1985-08-30 | 1987-03-05 | Hitachi Ltd | 紫外線洗浄モニタ方法 |
JP2725295B2 (ja) * | 1988-08-02 | 1998-03-11 | 日本電気株式会社 | シンクロトロン放射光露光装置 |
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WO1995007152A1 (en) * | 1993-09-08 | 1995-03-16 | Uvtech Systems, Inc. | Surface processing |
JPH0864559A (ja) * | 1994-06-14 | 1996-03-08 | Fsi Internatl Inc | 基板面から不要な物質を除去する方法 |
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JP3096021B2 (ja) * | 1998-05-18 | 2000-10-10 | キヤノン株式会社 | 放射光照射装置および方法 |
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JP3628939B2 (ja) * | 2000-06-27 | 2005-03-16 | 松下電器産業株式会社 | 露光方法及び露光装置 |
DE10061248B4 (de) * | 2000-12-09 | 2004-02-26 | Carl Zeiss | Verfahren und Vorrichtung zur In-situ-Dekontamination eines EUV-Lithographiegerätes |
US6772776B2 (en) * | 2001-09-18 | 2004-08-10 | Euv Llc | Apparatus for in situ cleaning of carbon contaminated surfaces |
US6828569B2 (en) * | 2001-11-19 | 2004-12-07 | Asml Netherlands B.V. | Lithographic projection apparatus, device manufacturing method and device manufactured thereby |
DE10209493B4 (de) * | 2002-03-07 | 2007-03-22 | Carl Zeiss Smt Ag | Verfahren zur Vermeidung von Kontamination auf optischen Elementen, Vorrichtung zur Regelung von Kontamination auf optischen Elementen und EUV-Lithographievorrichtung |
US6847463B2 (en) * | 2002-06-05 | 2005-01-25 | Euv, Llc | Method and apparatus for detecting the presence and thickness of carbon and oxide layers on EUV reflective surfaces |
-
2002
- 2002-03-07 DE DE10209493A patent/DE10209493B4/de not_active Expired - Fee Related
-
2003
- 2003-03-07 JP JP2003573498A patent/JP2005519333A/ja active Pending
- 2003-03-07 EP EP03711941A patent/EP1481287A2/de not_active Withdrawn
- 2003-03-07 CN CN038055147A patent/CN1639643B/zh not_active Expired - Fee Related
- 2003-03-07 KR KR10-2004-7013943A patent/KR20040102031A/ko not_active Application Discontinuation
- 2003-03-07 WO PCT/EP2003/002372 patent/WO2003075098A2/de active Application Filing
- 2003-03-07 AU AU2003218706A patent/AU2003218706A1/en not_active Abandoned
- 2003-03-07 US US10/506,555 patent/US7060993B2/en not_active Expired - Fee Related
-
2006
- 2006-03-14 US US11/375,267 patent/US7462842B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0987601A2 (de) * | 1998-09-17 | 2000-03-22 | Nikon Corporation | Belichtungsapparat und Belichtungsverfahren unter Verwendung derselben |
JP2000346817A (ja) * | 1999-06-07 | 2000-12-15 | Nikon Corp | 測定装置、照射装置および露光方法 |
US6545272B1 (en) * | 1999-06-07 | 2003-04-08 | Nikon Corporation | Apparatus and methods for monitoring contamination of an optical component in an optical system |
Non-Patent Citations (2)
Title |
---|
MEILING H ET AL: "Prevention of MoSi multilayer reflection loss in EUVL tools", SOFT X-RAY AND EUV IMAGING SYSTEMS II, SAN DIEGO, CA, USA, 31 JULY-1 AUG. 2001, vol. 4506, Proceedings of the SPIE - The International Society for Optical Engineering, 2001, SPIE-Int. Soc. Opt. Eng, USA, pages 93 - 104, XP008025582, ISSN: 0277-786X * |
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 15 6 April 2001 (2001-04-06) * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8158959B2 (en) | 2009-02-12 | 2012-04-17 | Gigaphoton Inc. | Extreme ultraviolet light source apparatus |
US8586954B2 (en) | 2009-02-12 | 2013-11-19 | Gigaphoton Inc. | Extreme ultraviolet light source apparatus |
Also Published As
Publication number | Publication date |
---|---|
AU2003218706A1 (en) | 2003-09-16 |
CN1639643A (zh) | 2005-07-13 |
WO2003075098A2 (de) | 2003-09-12 |
KR20040102031A (ko) | 2004-12-03 |
DE10209493B4 (de) | 2007-03-22 |
DE10209493A1 (de) | 2003-10-02 |
JP2005519333A (ja) | 2005-06-30 |
US7060993B2 (en) | 2006-06-13 |
CN1639643B (zh) | 2011-08-03 |
US20060192158A1 (en) | 2006-08-31 |
EP1481287A2 (de) | 2004-12-01 |
US7462842B2 (en) | 2008-12-09 |
US20050104015A1 (en) | 2005-05-19 |
AU2003218706A8 (en) | 2003-09-16 |
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