WO2003030239A1 - Procede de gravure de substrat de silicium et appareil de gravure - Google Patents
Procede de gravure de substrat de silicium et appareil de gravure Download PDFInfo
- Publication number
- WO2003030239A1 WO2003030239A1 PCT/JP2002/009734 JP0209734W WO03030239A1 WO 2003030239 A1 WO2003030239 A1 WO 2003030239A1 JP 0209734 W JP0209734 W JP 0209734W WO 03030239 A1 WO03030239 A1 WO 03030239A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- etching
- gas
- supplied
- silicon substrate
- passivation film
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
- H01J2237/3347—Problems associated with etching bottom of holes or trenches
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003533332A JP4209774B2 (ja) | 2001-09-28 | 2002-09-20 | シリコン基板のエッチング方法およびエッチング装置 |
US10/812,747 US20040180544A1 (en) | 2001-09-28 | 2004-03-29 | Silicon substrate etching method and etching apparatus |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001-299435 | 2001-09-28 | ||
JP2001299435 | 2001-09-28 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/812,747 Continuation US20040180544A1 (en) | 2001-09-28 | 2004-03-29 | Silicon substrate etching method and etching apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2003030239A1 true WO2003030239A1 (fr) | 2003-04-10 |
Family
ID=19120193
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2002/009734 WO2003030239A1 (fr) | 2001-09-28 | 2002-09-20 | Procede de gravure de substrat de silicium et appareil de gravure |
Country Status (3)
Country | Link |
---|---|
US (1) | US20040180544A1 (ja) |
JP (1) | JP4209774B2 (ja) |
WO (1) | WO2003030239A1 (ja) |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005086079A (ja) * | 2003-09-10 | 2005-03-31 | Denso Corp | 半導体装置の製造方法 |
WO2005055303A1 (ja) * | 2003-12-01 | 2005-06-16 | Matsushita Electric Industrial Co., Ltd. | プラズマエッチング方法 |
JP2005227106A (ja) * | 2004-02-12 | 2005-08-25 | Seiko Instruments Inc | 容量型力学量センサ |
US7220678B2 (en) | 2003-03-25 | 2007-05-22 | Sumitomo Precision Products Co., Ltd. | Method for etching of a silicon substrate and etching apparatus |
JP2007311584A (ja) * | 2006-05-19 | 2007-11-29 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
JP2008193098A (ja) * | 2007-02-06 | 2008-08-21 | Samsung Electronics Co Ltd | ダブルパターニング工程を用いる半導体素子の微細パターン形成方法 |
CN100442452C (zh) * | 2003-12-01 | 2008-12-10 | 松下电器产业株式会社 | 等离子蚀刻法 |
JP2009239054A (ja) * | 2008-03-27 | 2009-10-15 | Sumitomo Precision Prod Co Ltd | シリコン構造体の製造方法及びその製造装置並びにその製造プログラム |
JP2010225948A (ja) * | 2009-03-25 | 2010-10-07 | Sumitomo Precision Prod Co Ltd | エッチング方法 |
JP2012039048A (ja) * | 2010-08-12 | 2012-02-23 | Tokyo Electron Ltd | エッチングガスの供給方法及びエッチング装置 |
KR101533781B1 (ko) * | 2013-09-16 | 2015-07-03 | 주식회사티티엘 | 패터닝된 사파이어기판을 에칭하기 위한 가스초핑 프로세스 |
JP5749166B2 (ja) * | 2009-07-01 | 2015-07-15 | Sppテクノロジーズ株式会社 | シリコン構造体の製造方法及びその製造装置並びにその製造プログラム |
EP3238942A1 (en) | 2016-04-27 | 2017-11-01 | Toshiba TEC Kabushiki Kaisha | Ink jet head and ink jet recording apparatus |
EP3246164A1 (en) | 2016-05-17 | 2017-11-22 | Toshiba TEC Kabushiki Kaisha | Inkjet head and inkjet recording apparatus |
JP2019012732A (ja) * | 2017-06-29 | 2019-01-24 | 東京エレクトロン株式会社 | プラズマエッチング方法及びプラズマエッチング装置 |
US11121001B2 (en) | 2019-08-22 | 2021-09-14 | Tokyo Electron Limited | Method of etching, device manufacturing method, and plasma processing apparatus |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1892757B1 (en) * | 2006-08-25 | 2017-06-07 | Imec | High aspect ratio via etch |
CN103824767B (zh) * | 2012-11-16 | 2017-05-17 | 中微半导体设备(上海)有限公司 | 一种深硅通孔的刻蚀方法 |
US9054050B2 (en) * | 2013-11-06 | 2015-06-09 | Tokyo Electron Limited | Method for deep silicon etching using gas pulsing |
CN105336607A (zh) * | 2014-05-26 | 2016-02-17 | 北大方正集团有限公司 | 一种功率器件的沟槽的制作方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4579623A (en) * | 1983-08-31 | 1986-04-01 | Hitachi, Ltd. | Method and apparatus for surface treatment by plasma |
JPS61256725A (ja) * | 1985-05-10 | 1986-11-14 | Hitachi Ltd | ドライエツチング方法 |
US4795529A (en) * | 1986-10-17 | 1989-01-03 | Hitachi, Ltd. | Plasma treating method and apparatus therefor |
EP0822582A2 (en) * | 1996-08-01 | 1998-02-04 | Surface Technology Systems Limited | Method of surface treatment of semiconductor substrates |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4500408A (en) * | 1983-07-19 | 1985-02-19 | Varian Associates, Inc. | Apparatus for and method of controlling sputter coating |
US5068002A (en) * | 1989-08-03 | 1991-11-26 | Quintron, Inc. | Ultrasonic glow discharge surface cleaning |
US6068784A (en) * | 1989-10-03 | 2000-05-30 | Applied Materials, Inc. | Process used in an RF coupled plasma reactor |
US5077875A (en) * | 1990-01-31 | 1992-01-07 | Raytheon Company | Reactor vessel for the growth of heterojunction devices |
US6074512A (en) * | 1991-06-27 | 2000-06-13 | Applied Materials, Inc. | Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners |
US6514376B1 (en) * | 1991-06-27 | 2003-02-04 | Applied Materials Inc. | Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna |
US6095083A (en) * | 1991-06-27 | 2000-08-01 | Applied Materiels, Inc. | Vacuum processing chamber having multi-mode access |
US6165311A (en) * | 1991-06-27 | 2000-12-26 | Applied Materials, Inc. | Inductively coupled RF plasma reactor having an overhead solenoidal antenna |
US6024826A (en) * | 1996-05-13 | 2000-02-15 | Applied Materials, Inc. | Plasma reactor with heated source of a polymer-hardening precursor material |
US6063233A (en) * | 1991-06-27 | 2000-05-16 | Applied Materials, Inc. | Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna |
US5368685A (en) * | 1992-03-24 | 1994-11-29 | Hitachi, Ltd. | Dry etching apparatus and method |
KR100238627B1 (ko) * | 1993-01-12 | 2000-01-15 | 히가시 데쓰로 | 플라즈마 처리장치 |
KR100291108B1 (ko) * | 1993-03-17 | 2001-06-01 | 히가시 데쓰로 | 플라즈마 처리 시스템 |
US5529657A (en) * | 1993-10-04 | 1996-06-25 | Tokyo Electron Limited | Plasma processing apparatus |
US5571366A (en) * | 1993-10-20 | 1996-11-05 | Tokyo Electron Limited | Plasma processing apparatus |
TW299559B (ja) * | 1994-04-20 | 1997-03-01 | Tokyo Electron Co Ltd | |
US5685942A (en) * | 1994-12-05 | 1997-11-11 | Tokyo Electron Limited | Plasma processing apparatus and method |
TW434745B (en) * | 1995-06-07 | 2001-05-16 | Tokyo Electron Ltd | Plasma processing apparatus |
JP3220394B2 (ja) * | 1996-09-27 | 2001-10-22 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JPH10240356A (ja) * | 1997-02-21 | 1998-09-11 | Anelva Corp | 基板処理装置の基板温度制御法と基板温度制御性判定法 |
JP4065213B2 (ja) * | 2003-03-25 | 2008-03-19 | 住友精密工業株式会社 | シリコン基板のエッチング方法及びエッチング装置 |
-
2002
- 2002-09-20 JP JP2003533332A patent/JP4209774B2/ja not_active Expired - Lifetime
- 2002-09-20 WO PCT/JP2002/009734 patent/WO2003030239A1/ja active Application Filing
-
2004
- 2004-03-29 US US10/812,747 patent/US20040180544A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4579623A (en) * | 1983-08-31 | 1986-04-01 | Hitachi, Ltd. | Method and apparatus for surface treatment by plasma |
JPS61256725A (ja) * | 1985-05-10 | 1986-11-14 | Hitachi Ltd | ドライエツチング方法 |
US4795529A (en) * | 1986-10-17 | 1989-01-03 | Hitachi, Ltd. | Plasma treating method and apparatus therefor |
EP0822582A2 (en) * | 1996-08-01 | 1998-02-04 | Surface Technology Systems Limited | Method of surface treatment of semiconductor substrates |
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7220678B2 (en) | 2003-03-25 | 2007-05-22 | Sumitomo Precision Products Co., Ltd. | Method for etching of a silicon substrate and etching apparatus |
JP2005086079A (ja) * | 2003-09-10 | 2005-03-31 | Denso Corp | 半導体装置の製造方法 |
CN100442452C (zh) * | 2003-12-01 | 2008-12-10 | 松下电器产业株式会社 | 等离子蚀刻法 |
WO2005055303A1 (ja) * | 2003-12-01 | 2005-06-16 | Matsushita Electric Industrial Co., Ltd. | プラズマエッチング方法 |
JP2005227106A (ja) * | 2004-02-12 | 2005-08-25 | Seiko Instruments Inc | 容量型力学量センサ |
JP4520752B2 (ja) * | 2004-02-12 | 2010-08-11 | セイコーインスツル株式会社 | 容量型力学量センサの製造方法 |
JP2007311584A (ja) * | 2006-05-19 | 2007-11-29 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
US8669183B2 (en) | 2006-05-19 | 2014-03-11 | Sanyo Semiconductor Manufacturing Co., Ltd. | Manufacturing method of semiconductor device |
JP2008193098A (ja) * | 2007-02-06 | 2008-08-21 | Samsung Electronics Co Ltd | ダブルパターニング工程を用いる半導体素子の微細パターン形成方法 |
JP2009239054A (ja) * | 2008-03-27 | 2009-10-15 | Sumitomo Precision Prod Co Ltd | シリコン構造体の製造方法及びその製造装置並びにその製造プログラム |
JP2010225948A (ja) * | 2009-03-25 | 2010-10-07 | Sumitomo Precision Prod Co Ltd | エッチング方法 |
JP5749166B2 (ja) * | 2009-07-01 | 2015-07-15 | Sppテクノロジーズ株式会社 | シリコン構造体の製造方法及びその製造装置並びにその製造プログラム |
JP2012039048A (ja) * | 2010-08-12 | 2012-02-23 | Tokyo Electron Ltd | エッチングガスの供給方法及びエッチング装置 |
US8815106B2 (en) | 2010-08-12 | 2014-08-26 | Tokyo Electron Limited | Method of supplying etching gas and etching apparatus |
KR101533781B1 (ko) * | 2013-09-16 | 2015-07-03 | 주식회사티티엘 | 패터닝된 사파이어기판을 에칭하기 위한 가스초핑 프로세스 |
EP3238942A1 (en) | 2016-04-27 | 2017-11-01 | Toshiba TEC Kabushiki Kaisha | Ink jet head and ink jet recording apparatus |
EP3246164A1 (en) | 2016-05-17 | 2017-11-22 | Toshiba TEC Kabushiki Kaisha | Inkjet head and inkjet recording apparatus |
JP2019012732A (ja) * | 2017-06-29 | 2019-01-24 | 東京エレクトロン株式会社 | プラズマエッチング方法及びプラズマエッチング装置 |
US11121001B2 (en) | 2019-08-22 | 2021-09-14 | Tokyo Electron Limited | Method of etching, device manufacturing method, and plasma processing apparatus |
Also Published As
Publication number | Publication date |
---|---|
JPWO2003030239A1 (ja) | 2005-01-20 |
US20040180544A1 (en) | 2004-09-16 |
JP4209774B2 (ja) | 2009-01-14 |
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