WO2003016590A2 - Dispositif destine a alimenter un reacteur de depot chimique en phase vapeur en melanges gazeux - Google Patents

Dispositif destine a alimenter un reacteur de depot chimique en phase vapeur en melanges gazeux Download PDF

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Publication number
WO2003016590A2
WO2003016590A2 PCT/DE2002/002592 DE0202592W WO03016590A2 WO 2003016590 A2 WO2003016590 A2 WO 2003016590A2 DE 0202592 W DE0202592 W DE 0202592W WO 03016590 A2 WO03016590 A2 WO 03016590A2
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WO
WIPO (PCT)
Prior art keywords
cvd
valve
shut
carrier gas
medium
Prior art date
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PCT/DE2002/002592
Other languages
German (de)
English (en)
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WO2003016590A3 (fr
Inventor
Rudolf Kogler
Helmut Schönherr
Silke Skrabl
Rolf Urschitz
Original Assignee
Infineon Technologies Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag
Publication of WO2003016590A2 publication Critical patent/WO2003016590A2/fr
Publication of WO2003016590A3 publication Critical patent/WO2003016590A3/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber

Definitions

  • the invention relates to a device by means of which gas mixtures with CVD media contained therein can be fed to a CVD reactor.
  • CVD Chemical Vapor Deposition
  • the CVD media are usually initially in liquid form and must therefore be converted to the gas phase before the gas phase separation.
  • Two common methods are available for converting liquid CVD media into the gas phase.
  • a carrier gas is pumped through a container which is filled with the liquid CVD medium. During this process, part of the CVD medium passes into the gas phase through evaporation and mixes with the carrier gas atmosphere.
  • a second method is based on the atomization of the liquid CVD medium. For this purpose, the liquid CVD medium is injected into a by means of an injection valve
  • Sprayed small chamber enriched carrier gas so that a gaseous state of the CVD medium and mixing with the carrier gas are also achieved.
  • Chemically inert gases such as e.g. Helium. This eliminates undesired reactions of the carrier gas with the CVD medium.
  • PCT patent application WO 00/15881 describes a CVD system which is based on the principle of evaporation of liquid CVD media.
  • a liquid CVD medium in a container.
  • the container has a feed line for a carrier gas which is inserted into the container with a adjustable flow is initiated.
  • the carrier gas flows through the container filled with the liquid CVD medium, the CVD medium is converted into the gas phase by evaporation and, together with the carrier gas, is fed via feed lines into a CVD reactor in which a controlled separation of the CVD medium from the Gas phase takes place on a substrate surface.
  • a disadvantage of previous CVD systems is that the gaseous CVD media partially already condense in the feed lines to the CVD reactor and possibly on the injection valves. Deposits in the feed lines caused thereby cause reduced and undefined cross-sectional areas of the feed lines, which makes a controlled supply of the gas mixtures to the CVD reactor considerably more difficult. Ultimately, the supply lines can even be completely closed. Deposits on the injection valves lead to malfunction or failure of the injection valves due to the high reactivity of the CVD media. Due to such degradations, the injection valves have to be replaced frequently. Otherwise, if the injection valves remained in the CVD system for too long, there was a risk that the function of the injector valves, which were impaired in their function, would get liquid CVD media into the CVD reactor and heavily contaminate it.
  • the object of the invention is therefore to provide a device for a CVD system and to specify a corresponding method by means of which reduced deposits of CVD media are brought about in the feed lines to the CVD reactor and, if appropriate, on the injection valves. It is in particular a further object of the invention that undesired mixing of the CVD media can be prevented.
  • the gas mixture is generated by atomizing a liquid CVD medium in a carrier gas.
  • the at least one feed branch comprises a first feed line for the liquid CVD medium, a second feed line for the carrier gas and a treatment unit.
  • the processing unit is used to transfer the liquid CVD medium into the gas phase by means of an injection valve and to mix the CVD medium with the carrier gas.
  • the processing unit is supplied on the input side with the liquid CVD medium through the first feed line and with the carrier gas through the second feed line.
  • An essential idea of the invention is that the first feed line has a first flow control unit and the second feed line has a second flow control unit.
  • a flow can be understood as an amount or a volume that flows through a surface perpendicular to the flow per unit of time.
  • the flow of the liquid CVD medium is given in the unit mg / min and the flow of the carrier gas in the unit sccm (sccm: standard cm 3 / min).
  • the processing unit can be supplied with the CVD medium and the carrier gas with individually set flows.
  • the flow control of the liquid CVD medium can also indirectly control the rate at which the liquid CVD medium is atomized in the processing unit.
  • the chemical compositions and the physical properties of the CVD medium and the carrier gas allow their mixture concentrations to be optimized by the device according to the invention such that on the one hand the CVD medium completely changes into the gas phase and on the other hand condensations of the CVD medium in the feed lines to the CVD Reactor and at the injector are minimized. This measure extends the service life of the supply lines and the injection valve considerably.
  • the device according to the invention has a plurality of feed branches and thus a plurality of processing units, the inflows to each processing unit can be set independently of the inflows to the other processing units. Furthermore, the presence of several supply branches for one CVD medium each ensures that different CVD media do not mix undesirably.
  • the flow of the CVD medium and the flow of the carrier gas can advantageously be controlled independently of one another. Independent controls of this type make it possible, for example, to set the desired operating conditions of an associated CVD system either via the first flow control unit or via the second flow control unit.
  • the reason for this is that in the device according to the invention which works on the atomization principle, both a change in the flow of the liquid CVD medium and a change in the flow of the carrier gas change the concentration ratio which exists in the treatment unit between the CVD medium and the carrier gas , directly influenced.
  • the flow control arrangement includes, for example, measuring devices for measuring the flows through the first and the second feed line, the two flow control units described above and a control unit which regulates the flows through the two feed lines to predetermined and adjustable values. It can also be provided that the regulation takes place only in one of the two feed lines.
  • liquid sensor downstream of the processing unit.
  • the liquid sensor can be used to determine whether the atomization of the CVD medium in the processing unit is optimal.
  • the flow control arrangement is fed with the measured values supplied by the liquid sensor. In this case, the liquid sensor would take over the function of the above-mentioned measuring device in the flow control.
  • shut-off valves are arranged on the inflow and outflow sides of the first flow control unit.
  • further shut-off valves can advantageously be provided on the upstream and downstream sides of the second flow control unit.
  • these measures are particularly advantageous when replacing a flow control unit. Due to the shut-off valves, the two flow control units can be decoupled from the supply lines and removed from the supply lines without the vacuum in the supply lines being impaired thereby.
  • these measures are advantageous if a certain CVD medium is not required during the operation of the associated CVD system.
  • a particularly preferred embodiment of the invention is characterized in that in the case of a plurality of feed branches, these are combined on the output side to form a common feed line which feeds the CVD reactor through a gas inlet. This reduces the number of gas inlets on the CVD reactor, which means that the likelihood of a leak in the vacuum seal of the CVD reactor is also reduced.
  • a method according to the invention relates to the supply of at least one gas mixture to a CVD reactor.
  • the at least one gas mixture is generated by atomizing a liquid CVD medium in a carrier gas.
  • the initially liquid CVD medium is converted into the gas phase in a treatment unit by an injection valve and mixed there with the carrier gas.
  • An essential idea of the invention is that the inflows of the liquid CVD medium and the carrier gas to the processing unit are controlled.
  • the advantage of the method according to the invention is that by controlling the inflows of the CVD medium and the carrier gas to the processing unit, an optimal mixing of the two gases in the processing unit is made possible. As a result, the efforts of the gaseous CVD medium for condensation are kept as low as possible, so that deposits of the CVD medium in the supply lines and on the injection valve and thereby impaired operation of the associated CVD system are minimized.
  • Another aspect of the invention relates to a device for supplying gases to a CVD reactor, which has supply lines for CVD media and / or gases to the CVD reactor and a cleaning arrangement for pumping liquid residues out of the supply lines.
  • the cleaning arrangement can be coupled to the feed lines via valves. During the cleaning process, gases that remove the liquid residues hold, not pumped through the CVD reactor. Furthermore, the cleaning arrangement and the CVD reactor have a common pump.
  • This device allows both those liquid residues that are left in the feed lines for the liquid CVD media after the operation of the CVD system to be pumped out, as well as those liquid residues that result from condensation of the gaseous CVD media in the feed lines for the gas mixtures to the CVD reactor.
  • Such cleaning measures reduce deposits of CVD media in the feed lines to the CVD reactor.
  • An advantage of the present device is that the gases produced during the pumping out are not pumped through the CVD reactor. This prevents the gaseous residues of the CVD media from contaminating the CVD reactor.
  • Another advantage lies in the joint use of a pump both for cleaning the supply lines and for creating a vacuum in the CVD reactor. This reduces the number of pumps required to a minimum.
  • the device according to the invention advantageously has a bypass line which connects the feed lines to the pump.
  • the bypass line enables the gases to be pumped out without them crossing the CVD reactor.
  • Bypass line therefore represents a simple way of realizing the cleaning arrangement.
  • a further advantageous embodiment of the invention provides that the bypass line has a check valve and / or a shut-off valve and / or a filter.
  • the check valve prevents air from entering the CVD system through the bypass line in the event of a sudden vacuum leak on the pump.
  • the shut-off valve is open while the supply lines are being cleaned and closed during normal operation of the CVD system.
  • the filter prevents residues of CVD media in liquid form from getting into the pump and damaging it.
  • a further shut-off valve can advantageously be arranged between the CVD reactor and the pump. This prevents the penetration of CVD media into the CVD reactor and the resulting contamination of the CVD reactor during the cleaning operation.
  • liquid residues are pumped out of the supply lines.
  • a pump is used, which is also used as a vacuum pump of the CVD reactor.
  • gases which contain the liquid residues are not pumped through the CVD reactor during the cleaning of the feed lines.
  • the process according to the invention has the advantage that when cleaning the feed lines, the gases which carry the remaining residues of the CVD media out of the feed lines are not pumped through the CVD reactor. This prevents the CVD reactor from being contaminated by these gases.
  • Another advantage is the use of the pump for vacuum generation in the CVD reactor as well as for cleaning the supply lines. This saves additional pumps that are only used for cleaning the supply lines.
  • the single figure shows a schematic arrangement of an exemplary embodiment of the device according to the invention for supplying gases to a CVD reactor.
  • the figure shows a CVD reactor R, which is fed through a gas inlet with CVD media M1, M2 and M3.
  • the CVD Media are in the liquid state beforehand and must therefore first be converted into the gas phase. This is done in supply branches ZI, Z2 and Z3. Since the feed branches ZI, Z2 and Z3 correspond in their structure and function, only the feed branch ZI is described below. The structure and function of the feed branches Z2 and Z3 result from this in an analogous manner.
  • the CVD medium M1 is supplied to the feed branch ZI in the liquid state. After passing through a 3-way valve 3WV11, a shut-off valve AV11 and a 3-way valve 3WV12, the liquid CVD medium Ml flows through a flow control unit DSU and reaches an injection valve EVl via a shut-off valve AV14.
  • the feed branch ZI also has a feed line for a carrier gas T.
  • the carrier gas T first passes through a filter F2 and is then fed to the feed branches ZI, Z2 and Z3. In the feed branch ZI, the carrier gas T successively passes through a shut-off valve AV12, a flow control unit DS12 and a shut-off valve AV13.
  • the liquid CVD medium Ml is then injected into the carrier gas T within a small chamber through the injection valve EV1, as a result of which the CVD medium Ml changes into the gas phase and mixes with the carrier gas T.
  • a liquid sensor FS1 downstream of the injection valve EV1 serves to determine the liquid content of the gas mixture consisting of the CVD medium M1 and the carrier gas T.
  • the flow control units DSU and DS12 can include a control loop.
  • the flows are measured by the flow control units DSU and DS12 and then for example, controlled by means of controllable valves within the flow control units DSU and DS12 to predetermined values.
  • the flows through the flow control units DSU and DS12 are not measured for the control arrangement, but that the liquid sensor FS1 serves as a measuring device of the control arrangement. If the gas mixture produced is too high, the flow of the carrier gas T can be increased, for example, or the flow of the medium Ml can be reduced.
  • the shut-off valves AV12 and AV13 are required when replacing the flow control unit DS12.
  • the flow control unit DS12 can be decoupled from the supply lines and replaced by the shut-off valves AV12 and AV13.
  • shut-off valves AV11 and AV14 and the flow control unit DSU The same applies to the shut-off valves AV11 and AV14 and the flow control unit DSU.
  • the feed branch ZI can be decoupled from the CVD reactor R.
  • all feed branches ZI, Z2 and Z3 can be decoupled from the CVD reactor R by the shut-off valve AV2.
  • the filter F3 prevents contaminants from entering the CVD reactor R.
  • a bypass line BL is provided for cleaning the lines of the present arrangement.
  • the bypass line BL is connected at one end to the line branches ZI, Z2 and Z3 via the 3-way valves 3WV11, 3WV21 and 3WV31.
  • the bypass line BL is connected to a pump P via a check valve RV5, a shutoff valve AV3 and a filter F4. If the respective valves have the corresponding positions, residues of all types, in particular liquid residues of the CVD media M1, M2 and M3, can be pumped through the bypass line BL from the feed branches ZI, Z2 and Z3.
  • the vacuum in the CVD reactor R and the feed branches ZI, Z2 and Z3 is also generated by the pump P.
  • the CVD reactor R is separated from the pump P and the bypass line BL by a shutoff valve AV4.
  • the shutoff valve AV4 is open and the shutoff valve AV3 is closed, so that the bypass line BL is decoupled from the pump P.
  • the feed branches ZI, Z2 and Z3 can be flushed with nitrogen N for cleaning purposes.
  • the nitrogen N is flushed through a check valve RV1 and the 3-way valve 3WV12 through the feed branch ZI.
  • the nitrogen N can also be used to purge the CVD reactor R.
  • the common feed of the feed branches ZI, Z2 and Z3 can be fed with nitrogen N.
  • the nitrogen N is fed to the common feed line to the CVD reactor R via a filter F1, a shut-off valve AVI, a needle valve NV and a check valve RV4.
  • This nitrogen supply can also be used to purge the feed branches ZI, Z2 and Z3 via their outputs.

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)

Abstract

La présente invention concerne un dispositif comprenant une branche d'alimentation (Z1) destinée à un mélange gazeux composé d'une substance vaporisée (M1) et d'un gaz vecteur (T) et alimentant un réacteur de dépôt chimique en phase vapeur (CVD) (R). La branche d'alimentation (Z1) comprend une conduite d'alimentation destinée à la substance liquide (M1), une conduite d'alimentation destinée au gaz vecteur (T) et une unité de préparation dans laquelle débouchent les conduites et destinée à l'alimentation en substance liquide (M1) au moyen d'une soupape d'injection (EV1) à l'état gazeux, et au mélange de la substance (M1) avec le gaz vecteur (T). les conduites présentent respectivement une unité de régulation de flux (DS11, DS12).
PCT/DE2002/002592 2001-08-01 2002-07-15 Dispositif destine a alimenter un reacteur de depot chimique en phase vapeur en melanges gazeux WO2003016590A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2001137673 DE10137673A1 (de) 2001-08-01 2001-08-01 Vorrichtung zur Zufuhr von Gasgemischen zu einem CVD-Reaktor
DE10137673.1 2001-08-01

Publications (2)

Publication Number Publication Date
WO2003016590A2 true WO2003016590A2 (fr) 2003-02-27
WO2003016590A3 WO2003016590A3 (fr) 2003-05-30

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DE (1) DE10137673A1 (fr)
WO (1) WO2003016590A2 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005017985A1 (fr) * 2003-08-14 2005-02-24 Infineon Technologies Ag Dispositif d'alimentation, en particulier pour un reacteur de depot chimique en phase vapeur utilise pour la croissance d'une couche epitaxiale
DE10345824A1 (de) * 2003-09-30 2005-05-04 Infineon Technologies Ag Anordnung zur Abscheidung von atomaren Schichten auf Substraten
WO2009105376A2 (fr) * 2008-02-22 2009-08-27 Praxair Technology, Inc. Systèmes de distribution à multiples ampoules
CN110016657A (zh) * 2018-01-08 2019-07-16 北京北方华创微电子装备有限公司 流量控制方法及装置、反应腔室

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US6179925B1 (en) * 1999-05-14 2001-01-30 Applied Materials, Inc. Method and apparatus for improved control of process and purge material in substrate processing system
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US6110531A (en) * 1991-02-25 2000-08-29 Symetrix Corporation Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition
US6244575B1 (en) * 1996-10-02 2001-06-12 Micron Technology, Inc. Method and apparatus for vaporizing liquid precursors and system for using same
US5968588A (en) * 1997-03-17 1999-10-19 Applied Materials, Inc. In-situ liquid flow rate estimation and verification by sonic flow method
US6176930B1 (en) * 1999-03-04 2001-01-23 Applied Materials, Inc. Apparatus and method for controlling a flow of process material to a deposition chamber
US6179925B1 (en) * 1999-05-14 2001-01-30 Applied Materials, Inc. Method and apparatus for improved control of process and purge material in substrate processing system
EP1113089A1 (fr) * 1999-12-30 2001-07-04 Applied Materials, Inc. OMCVD de films de zirconate titanate de plomb
EP1122335A1 (fr) * 2000-02-01 2001-08-08 Applied Materials, Inc. Procédé et dispositif de vaporisation de liquides

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005017985A1 (fr) * 2003-08-14 2005-02-24 Infineon Technologies Ag Dispositif d'alimentation, en particulier pour un reacteur de depot chimique en phase vapeur utilise pour la croissance d'une couche epitaxiale
DE10345824A1 (de) * 2003-09-30 2005-05-04 Infineon Technologies Ag Anordnung zur Abscheidung von atomaren Schichten auf Substraten
WO2009105376A2 (fr) * 2008-02-22 2009-08-27 Praxair Technology, Inc. Systèmes de distribution à multiples ampoules
WO2009105376A3 (fr) * 2008-02-22 2010-06-03 Praxair Technology, Inc. Systèmes de distribution à multiples ampoules
CN110016657A (zh) * 2018-01-08 2019-07-16 北京北方华创微电子装备有限公司 流量控制方法及装置、反应腔室
CN110016657B (zh) * 2018-01-08 2020-06-19 北京北方华创微电子装备有限公司 流量控制方法及装置、反应腔室

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WO2003016590A3 (fr) 2003-05-30
DE10137673A1 (de) 2003-02-27

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