DE10137673A1 - Vorrichtung zur Zufuhr von Gasgemischen zu einem CVD-Reaktor - Google Patents

Vorrichtung zur Zufuhr von Gasgemischen zu einem CVD-Reaktor

Info

Publication number
DE10137673A1
DE10137673A1 DE2001137673 DE10137673A DE10137673A1 DE 10137673 A1 DE10137673 A1 DE 10137673A1 DE 2001137673 DE2001137673 DE 2001137673 DE 10137673 A DE10137673 A DE 10137673A DE 10137673 A1 DE10137673 A1 DE 10137673A1
Authority
DE
Germany
Prior art keywords
cvd
valve
shut
carrier gas
medium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE2001137673
Other languages
German (de)
English (en)
Inventor
Rudolf Kogler
Rolf Urschitz
Silke Skrabl
Helmut Schoenherr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Priority to DE2001137673 priority Critical patent/DE10137673A1/de
Priority to PCT/DE2002/002592 priority patent/WO2003016590A2/fr
Publication of DE10137673A1 publication Critical patent/DE10137673A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
DE2001137673 2001-08-01 2001-08-01 Vorrichtung zur Zufuhr von Gasgemischen zu einem CVD-Reaktor Withdrawn DE10137673A1 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE2001137673 DE10137673A1 (de) 2001-08-01 2001-08-01 Vorrichtung zur Zufuhr von Gasgemischen zu einem CVD-Reaktor
PCT/DE2002/002592 WO2003016590A2 (fr) 2001-08-01 2002-07-15 Dispositif destine a alimenter un reacteur de depot chimique en phase vapeur en melanges gazeux

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2001137673 DE10137673A1 (de) 2001-08-01 2001-08-01 Vorrichtung zur Zufuhr von Gasgemischen zu einem CVD-Reaktor

Publications (1)

Publication Number Publication Date
DE10137673A1 true DE10137673A1 (de) 2003-02-27

Family

ID=7693981

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2001137673 Withdrawn DE10137673A1 (de) 2001-08-01 2001-08-01 Vorrichtung zur Zufuhr von Gasgemischen zu einem CVD-Reaktor

Country Status (2)

Country Link
DE (1) DE10137673A1 (fr)
WO (1) WO2003016590A2 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10337568A1 (de) * 2003-08-14 2005-03-17 Infineon Technologies Ag Gasversorgungsanordnung, insbesondere für einen CVD-Prozessreaktor zum Aufwachsen einer Epitaxieschicht
DE10345824A1 (de) * 2003-09-30 2005-05-04 Infineon Technologies Ag Anordnung zur Abscheidung von atomaren Schichten auf Substraten
US20090214777A1 (en) * 2008-02-22 2009-08-27 Demetrius Sarigiannis Multiple ampoule delivery systems
CN110016657B (zh) * 2018-01-08 2020-06-19 北京北方华创微电子装备有限公司 流量控制方法及装置、反应腔室

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5372754A (en) * 1992-03-03 1994-12-13 Lintec Co., Ltd. Liquid vaporizer/feeder
US5690743A (en) * 1994-06-29 1997-11-25 Tokyo Electron Limited Liquid material supply apparatus and method
WO1999016929A1 (fr) * 1997-09-26 1999-04-08 Advanced Technology Materials, Inc. Systeme de distribution de reactif liquide
WO2000015881A2 (fr) * 1998-09-14 2000-03-23 Genitech Co., Ltd. Systeme d'alimentation en gaz d'un reacteur de chimio-deposition et son procede de commande
EP1087035A1 (fr) * 1999-03-12 2001-03-28 Tokyo Electron Limited Procede et appareil de formation d'un film mince

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6110531A (en) * 1991-02-25 2000-08-29 Symetrix Corporation Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition
US6244575B1 (en) * 1996-10-02 2001-06-12 Micron Technology, Inc. Method and apparatus for vaporizing liquid precursors and system for using same
US5968588A (en) * 1997-03-17 1999-10-19 Applied Materials, Inc. In-situ liquid flow rate estimation and verification by sonic flow method
US6176930B1 (en) * 1999-03-04 2001-01-23 Applied Materials, Inc. Apparatus and method for controlling a flow of process material to a deposition chamber
US6179925B1 (en) * 1999-05-14 2001-01-30 Applied Materials, Inc. Method and apparatus for improved control of process and purge material in substrate processing system
JP2001247967A (ja) * 1999-12-30 2001-09-14 Applied Materials Inc ジルコン酸チタン酸鉛膜の有機メタル化学気相堆積
US6596085B1 (en) * 2000-02-01 2003-07-22 Applied Materials, Inc. Methods and apparatus for improved vaporization of deposition material in a substrate processing system

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5372754A (en) * 1992-03-03 1994-12-13 Lintec Co., Ltd. Liquid vaporizer/feeder
US5690743A (en) * 1994-06-29 1997-11-25 Tokyo Electron Limited Liquid material supply apparatus and method
WO1999016929A1 (fr) * 1997-09-26 1999-04-08 Advanced Technology Materials, Inc. Systeme de distribution de reactif liquide
WO2000015881A2 (fr) * 1998-09-14 2000-03-23 Genitech Co., Ltd. Systeme d'alimentation en gaz d'un reacteur de chimio-deposition et son procede de commande
EP1087035A1 (fr) * 1999-03-12 2001-03-28 Tokyo Electron Limited Procede et appareil de formation d'un film mince

Also Published As

Publication number Publication date
WO2003016590A2 (fr) 2003-02-27
WO2003016590A3 (fr) 2003-05-30

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8139 Disposal/non-payment of the annual fee