WO2002099156A1 - Sputtering target for forming phase change optical disc protective film and optical recording medium having phase change optical disc protective film formed using that target - Google Patents
Sputtering target for forming phase change optical disc protective film and optical recording medium having phase change optical disc protective film formed using that target Download PDFInfo
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- WO2002099156A1 WO2002099156A1 PCT/JP2002/001306 JP0201306W WO02099156A1 WO 2002099156 A1 WO2002099156 A1 WO 2002099156A1 JP 0201306 W JP0201306 W JP 0201306W WO 02099156 A1 WO02099156 A1 WO 02099156A1
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- phase change
- protective film
- optical disc
- sputtering
- disc protective
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/547—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on sulfides or selenides or tellurides
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- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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Definitions
- the present invention when forming a film by sputtering, it is possible to reduce particles (dust generation) and nodules generated at the time of sputtering, and to improve mass productivity with high density and less variation in quality, particularly phase.
- the present invention relates to a sputtering target made of a complex of chalcogenide and silica oxide which is useful for forming a change-type optical disc protective film, and an optical recording medium in which a phase change optical disc protective film is formed using the target.
- phase change type optical disc used in the write-once type or the rewritable type attracts attention.
- the principle of recording and reproduction using this phase change type optical disc will be briefly described below.
- a phase change optical disc heats and raises the temperature of a recording thin film on a substrate by laser light irradiation to cause crystallographic phase change (amorphous crystal) in the structure of the recording thin film to record and reproduce information. Specifically, information is reproduced by detecting a change in reflectance resulting from a change in optical constant between the phases.
- the above-mentioned phase change is performed by the irradiation of a laser beam narrowed to a diameter of about 1 to several / x m.
- a laser beam of 1 m passes at a linear velocity of 1 O m / s
- the time for which light is irradiated to a certain point of the optical disc is 10 0 ns, and within this time the above phase change And reflectance detection needs to be done.
- crystallographic phase change that is, the phase change between amorphous and crystal, melting and quenching not only for the phase change recording layer of the optical disc but also for the reflection film of the dielectric protective layer of the peripheral alloy. Will be given repeatedly.
- phase change optical disks because sandwiches both sides of the G e- S b- T e based such as a recording thin film layer with a protective layer of Z n S ⁇ S I_ ⁇ refractory dielectric 2 system or the like, aluminum It has a four-layer structure provided with an alloy reflection film.
- the reflective layer and the protective layer are required to have an optical function which increases the absorption between the amorphous part and the crystalline part and the difference in reflectance is large, and also functions to prevent the moisture resistance of the recording thin film and the deformation due to heat. Requires the function of thermal condition control at the time of recording (refer to the magazine "Optics" 26-6, pp. 9-15).
- the protective layer of the high melting point dielectric is resistant to the cyclic stress of heat due to the temperature rise and the cooling, and furthermore, the thermal influence thereof does not affect the reflective film and other places, And it also needs to be thin, have low reflectivity, and have toughness that does not deteriorate.
- the dielectric protective layer plays an important role in this sense.
- the dielectric protective layer is usually formed by sputtering.
- a target consisting of a positive electrode and a negative electrode is made to face each other, and a high voltage is applied between these substrates and the flatter under an inert gas atmosphere to generate an electric field.
- the ionized electrons collide with the inert gas to form a plasma
- the positive ions in this plasma collide with the surface of the target (negative electrode) to knock out target constituent atoms, and this jumps out.
- the atoms are attached to the opposite substrate surface to form a film.
- the protective layer is required to have transparency and heat resistance in the visible light range, etc., it is composed of a complex of chalcogenide such as Z n S-S i 0 2 and silica oxide (hereinafter, particularly, the substance name is Unless otherwise stated, a representative example of Z n S-S i 0 2 will be described.) Sputtering using a target, a thin film of about 500 to 200 OA is formed.
- RF high frequency sputtering
- magnetron sputtering system magnetron sputtering system
- DC (direct current) sputtering system By refining and densifying the crystal grains of the target consisting of a complex of chalcogenide and silicon oxide, it is possible to make the sputtering surface of the surface uniform and smooth, reducing particle and nodules. In addition, the target life is also extended. As a result, it is known that the productivity of optical disks is improved.
- silica oxides have higher insulating properties than chalcogenides, and in consideration of the discharge stability of sputtering, a target in which fine silica oxides are uniformly dispersed in the matrix of chalcogenides is desired.
- Such chalcogenide and siliceous oxide target tends to form an air gap between the chalcogenide and the silicic acid, and the finer the silica, the more remarkable it becomes, and densification of the chalcogenide is also inhibited. There was a problem that the density decreased.
- the particles are considered to be caused by the gap between the chalcogenide and the silicon oxide, and the nodules are considered to originate from the silicon oxide having a low sputtering rate. Therefore, it is desirable that the gap between the chalcogenide and the silicon oxide be as small as possible, and the silicon oxide continuously present in the sputter erosion direction be as small as possible. Disclosure of the invention
- the present invention enables stable, low-cost, high-density target formation of fine grains of 97% or more at a low cost, and can further improve the uniformity of film formation and increase the production efficiency, particularly the phase.
- the invention relates to a sputtering target comprising a composite of chalcogenide and silica oxide useful for forming a variable optical disk and a light recording medium having a phase change optical disk protective film formed by using the sputtering target.
- a sputtering target comprising a composite of chalcogenide and silica oxide useful for forming a variable optical disk and a light recording medium having a phase change optical disk protective film formed by using the sputtering target.
- the present invention is based on this finding.
- a sputtering target for forming a phase change type optical disc protective film comprising a complex of a chalcogenide and a silicon oxide, and at least at a portion of the erosion, with respect to the normal direction of the sputtering surface at a temperature of 30 ° to Assuming that the average length in the normal direction of the silicate present in the plane in the range of + 30 ° is A, and the average length in the direction perpendicular to the normal is B, 0.3 0A / A sputtering apparatus for forming a phase change type optical disk protective film characterized in that it has a structure of B 90.95.
- the average length of the normal direction of the silicon oxide in the surface in the range of ⁇ 30 ° to + 30 ° with respect to the normal direction of the sputtering surface is 0.1 to 10 / im.
- Sputtering target for forming a phase change type optical disc protective film characterized in that.
- the average length in the normal direction of the silicon oxide present in the surface in the range of -30 ° to 130 ° with respect to the normal direction of the sputter surface is 0.:! To 10 A sputtering set for forming a phase change type optical disc protective film as described in the above 1).
- the crystallization temperature of the silica oxide is in the range of 900 to 140 ° C.
- the sputtering setting of the phase change type optical disc protective film described in each of the above 1 to 6 is provided. ⁇ .
- An optical recording medium in which a phase change optical disc protective film is formed by using the sputtering targets of 1 to 8 above.
- Fig. 1 is a graph showing the correlation between the incidence of nodules and the ratio AZB of the length of S i ⁇ 2 ⁇ 2 ⁇ Fig 2 shows the ratio of the surface roughness Ra (urn) to the length of s i 0 2 It is a graph which shows the correlation of A / B.
- the sputtering target for forming a phase change type optical disc protective film comprising a complex of chalcogenide and silica oxide according to the present invention has a range of from 30 ° to 30 ° with respect to the normal direction of the sputtering surface at least at the erosion site. If the average length of the normal direction of the silicate present in the surface in A is A, and the average length in the direction perpendicular to the normal is B, 0.3 ⁇ AZB ⁇ 0.5. Having an organization is a major feature.
- the length of the silicon dioxide present in a plane within a range of 30 ° to 30 ° with respect to the normal direction means the normal direction and 30 ° to 30 ° from the normal direction. It means the face that is in the range of deviation.
- the chalcogenide contains at least zinc sulfide, and the composition of silicon oxide is 1 to 5 Om 01%.
- the sputtering apparatus for forming a phase change optical disc protective film of the present invention can achieve a relative density of 97% or more.
- the present invention includes an optical recording medium in which a phase change optical disc protective film is formed using the above-mentioned sputtering target.
- the chalcogenide powder and the powder of silicon oxide are uniformly dispersed and mixed, and this is shaped by a hot press or the like.
- a sputtering receptacle for forming a phase change optical disc protective film which has a small gap between the chalcogenide powder and the silica oxide and a relative density of 97% or more.
- Alkali metals include Li, Na, K, Rb, Cs, and Fr
- alkaline earth metals include Be, Mg, Ca, Sr, Ba, and Ra.
- 0.01 to 10 wt% of boron, aluminum, phosphorus, arsenic or their oxides can also be contained.
- the sputtering of the present invention can also refine the grain size and increase the density, the sputtering surface of the sputtering can be made uniform and smooth, which reduces particle size and nodules during sputtering. In addition, it has the remarkable effect of being able to extend the evening life.
- the mixed powder was filled in a graphite die, and hot pressed under the conditions of Ar atmosphere, surface pressure of 150 kgzcm 2 and temperature of 1000 ° C.
- the relative density of the target obtained by this was 99%. Further, sputtering evening surface of S I_ ⁇ 2 parts, the ratio of the average length in a direction perpendicular to the normal direction of the average length and normal line (AZB) is 0. 7, S i 0 2 parts The average length in the normal direction was 8 m.
- the mixed powder was filled in a graphite die, and hot pressed under the conditions of Ar atmosphere, surface pressure ISO kgZcm 2 and temperature 1000 ° C.
- the relative density of the target obtained by this was 98%. Also, the ratio of the average length in the normal direction to the average length in the direction perpendicular to the normal (A / B) of the S i 0 2 part of the sputtering surface is 0.9, and S i 0 The average length in the normal direction of 2 parts is 10 m. (Example 3)
- the mixed powder was filled in a graphite die and subjected to hot pressing under the conditions of Ar atmosphere, surface pressure of 1 50 kg zcm 2 and temperature of 1 100 ° C.
- the relative density of the target obtained by this was 99.5%. Also, the S i 0 2 parts of spatter surface, the ratio of the average length in a direction perpendicular to the normal direction of the average length and normal line (AZB) is 0. 6, S i 0 2 parts The average length in the normal direction of was 6 m.
- the mixed powder was filled in a graphite die and hot pressed under the conditions of Ar atmosphere, surface pressure of 1 50 kg / cm 2 and temperature of 1000 ° C.
- the relative density of the target obtained by this was 94%. Further, sputtering evening surface of S I_ ⁇ 2 parts, the ratio of the average length in a direction perpendicular to the normal direction of the average length and normal line (A / B) 1. a 1, S i 0 The average length in the normal direction of the two parts was 15 m.
- the mixed powder was filled in a graphite die, and hot pressed under the conditions of Ar atmosphere, 300 kg Zc m 2 of surface pressure, and a temperature of 1 100 ° C.
- the relative density of the target obtained by this was 98%. Also, the S I_ ⁇ 2 parts of spatter surface, the ratio of the average length in a direction perpendicular to the normal direction of the average length and normal line (A / B) 1. is 0, S i 0 The average length in the normal direction of 2 parts was 1 3 ⁇ ⁇ ⁇ . (Comparative example 3)
- the mixed powder was filled in a graphite die and hot pressed under the conditions of Ar atmosphere, 300 kg / cm 2 of surface pressure, and temperature of 1 100 ° C.
- the relative density of the target obtained by this was 98%. Further, sputtering evening surface of S I_ ⁇ 2 parts, the ratio of the average length in a direction perpendicular to the normal direction of the average length and normal line (A / B) 1. a 1, S i 0 The average length in the normal direction of the two parts was 20 m.
- the sputter test was implemented using the targets manufactured by the said Examples 1-3 and Comparative Examples 1-2. Sputtering conditions were: input power 5 WZ cm 2 , Ar gas pressure 0.5 P a. The number of nodules generated and the roughness of the sputter surface were measured by this test. The results are shown in Table 1.
- FIG. 1 and FIG. Fig. 1 is a graph showing the correlation between the incidence of nodules and the ratio A / B of the length of S i 0 2 part, and Fig. 2 shows the surface roughness; a (rn) and S i ⁇ 2 part It is a graph which shows correlation of ratio of length. Therefore, by adjusting the length ratio Alpha / beta of S I_ ⁇ 2 parts, it is possible to control the generation and evening the surface roughness of one target of Nojiyu Le. Normal of S i 0 2 of density S i 0 2 Nodules Spatter surface (%) Average length ratio Direction average length Occurrence rate (individual surface roughness
- A Average length in the normal direction of silica gel present on a surface in the range of-30 + 30 ° with respect to the normal direction of the sputtering surface
- the length of the normal direction of the silica oxide existing with respect to the normal direction of the sputtering surface is A, and the surface exists in the range of 130 ° to 30 ° perpendicular to the normal direction.
- the length of the silicon dioxide to be formed is B, a spat for forming a phase change type optical disc protective film comprising a complex of a chalcogenide and a silica oxide having a structure of 0.3 ⁇ A / B ⁇ 0.95
- an annealing target when forming a film by sputtering, it is possible to reduce particles (dust generation) and nodules generated during sputtering and to improve mass productivity with high density and less variation in quality. It has a remarkable effect.
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Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02700587A EP1394284A4 (en) | 2001-06-01 | 2002-02-15 | SPRAY TARGET FOR CREATING A PHASE MODIFICATION OPTICAL DISK PROTECTIVE FILM AND OPTICAL RECORDING MEDIUM HAVING THE PROTECTIVE FILM OBTAINED USING THE SAME |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2001166246A JP2002358699A (ja) | 2001-06-01 | 2001-06-01 | 相変化型光ディスク保護膜形成用スパッタリングターゲット及び該ターゲットを使用して相変化型光ディスク保護膜を形成した光記録媒体 |
JP2001-166246 | 2001-06-01 |
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WO2002099156A1 true WO2002099156A1 (en) | 2002-12-12 |
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PCT/JP2002/001306 WO2002099156A1 (en) | 2001-06-01 | 2002-02-15 | Sputtering target for forming phase change optical disc protective film and optical recording medium having phase change optical disc protective film formed using that target |
Country Status (5)
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EP (1) | EP1394284A4 (ja) |
JP (1) | JP2002358699A (ja) |
CN (1) | CN1295375C (ja) |
TW (1) | TW593722B (ja) |
WO (1) | WO2002099156A1 (ja) |
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US7803209B2 (en) | 2004-11-30 | 2010-09-28 | Nippon Mining & Metals Co., Ltd | Sb-Te alloy sintered compact sputtering target |
EP1829985B1 (en) * | 2004-12-24 | 2013-10-16 | JX Nippon Mining & Metals Corporation | Sb-Te ALLOY SINTERING PRODUCT TARGET |
US7947106B2 (en) | 2005-01-18 | 2011-05-24 | Jx Nippon Mining & Metals Corporation | Sb-Te alloy powder for sintering, sintered compact sputtering target obtained by sintering said powder, and manufacturing method of Sb-Te alloy powder for sintering |
CN100364132C (zh) * | 2005-08-11 | 2008-01-23 | 上海交通大学 | 用于相变存储器的含硅系列硫族化物相变薄膜材料 |
KR101356280B1 (ko) | 2006-10-13 | 2014-01-28 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | Sb-Te 기 합금 소결체 스퍼터링 타겟 |
Citations (3)
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JP2000219962A (ja) * | 1999-01-29 | 2000-08-08 | Mitsubishi Materials Corp | 光記録保護膜形成用高強度スパッタリングターゲット |
JP2000297363A (ja) * | 1999-04-13 | 2000-10-24 | Mitsui Mining & Smelting Co Ltd | 光記録保護膜形成用スパッタリングターゲット及びその製造方法 |
JP2001254173A (ja) * | 2000-03-10 | 2001-09-18 | Mitsubishi Materials Corp | 高出力スパッタ条件ですぐれた耐割損性を発揮する光記録媒体保護層形成用スパッタリングターゲット焼結材 |
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US543572A (en) * | 1895-07-30 | Artificial-stone composition and method of making same | ||
US1674353A (en) * | 1925-11-02 | 1928-06-19 | William F Brockett | Pile remedy |
US3718559A (en) * | 1970-03-27 | 1973-02-27 | R Wallace | Electrogel process for removing electrolytes and concentrating the same from an aqueous solution |
JP3358548B2 (ja) * | 1998-07-21 | 2002-12-24 | 三菱マテリアル株式会社 | スパッタ割れのない光記録媒体保護膜形成用スパッタリングターゲット |
JP3916125B2 (ja) * | 2001-03-12 | 2007-05-16 | 日鉱金属株式会社 | ZnS−SiO2スパッタリングターゲット及び該ターゲットを使用してZnS−SiO2相変化型光ディスク保護膜を形成した光記録媒体 |
JP4047552B2 (ja) * | 2001-04-13 | 2008-02-13 | 日鉱金属株式会社 | ZnS−SiO2スパッタリングターゲット |
-
2001
- 2001-06-01 JP JP2001166246A patent/JP2002358699A/ja active Pending
-
2002
- 2002-02-15 WO PCT/JP2002/001306 patent/WO2002099156A1/ja active Application Filing
- 2002-02-15 CN CNB02801944XA patent/CN1295375C/zh not_active Expired - Lifetime
- 2002-02-15 EP EP02700587A patent/EP1394284A4/en not_active Withdrawn
- 2002-05-14 TW TW091109986A patent/TW593722B/zh not_active IP Right Cessation
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2000219962A (ja) * | 1999-01-29 | 2000-08-08 | Mitsubishi Materials Corp | 光記録保護膜形成用高強度スパッタリングターゲット |
JP2000297363A (ja) * | 1999-04-13 | 2000-10-24 | Mitsui Mining & Smelting Co Ltd | 光記録保護膜形成用スパッタリングターゲット及びその製造方法 |
JP2001254173A (ja) * | 2000-03-10 | 2001-09-18 | Mitsubishi Materials Corp | 高出力スパッタ条件ですぐれた耐割損性を発揮する光記録媒体保護層形成用スパッタリングターゲット焼結材 |
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EP1394284A4 (en) | 2008-08-20 |
CN1463300A (zh) | 2003-12-24 |
CN1295375C (zh) | 2007-01-17 |
TW593722B (en) | 2004-06-21 |
JP2002358699A (ja) | 2002-12-13 |
EP1394284A1 (en) | 2004-03-03 |
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