WO2002078084A3 - Verfahren zur herstellung ferroelektrischer speicherzellen - Google Patents

Verfahren zur herstellung ferroelektrischer speicherzellen Download PDF

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Publication number
WO2002078084A3
WO2002078084A3 PCT/DE2002/001054 DE0201054W WO02078084A3 WO 2002078084 A3 WO2002078084 A3 WO 2002078084A3 DE 0201054 W DE0201054 W DE 0201054W WO 02078084 A3 WO02078084 A3 WO 02078084A3
Authority
WO
WIPO (PCT)
Prior art keywords
adhesive layer
oxygen
layer
electrode
diffusion
Prior art date
Application number
PCT/DE2002/001054
Other languages
English (en)
French (fr)
Other versions
WO2002078084A2 (de
Inventor
Igor Kasko
Matthias Kroenke
Original Assignee
Infineon Technologies Ag
Igor Kasko
Matthias Kroenke
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Igor Kasko, Matthias Kroenke filed Critical Infineon Technologies Ag
Priority to EP02727262A priority Critical patent/EP1371093A2/de
Priority to KR1020037012312A priority patent/KR100579337B1/ko
Priority to JP2002576015A priority patent/JP2004526320A/ja
Publication of WO2002078084A2 publication Critical patent/WO2002078084A2/de
Publication of WO2002078084A3 publication Critical patent/WO2002078084A3/de
Priority to US10/669,072 priority patent/US6806097B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76855—After-treatment introducing at least one additional element into the layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/7687—Thin films associated with contacts of capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76888—By rendering at least a portion of the conductor non conductive, e.g. oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material

Abstract

Die Erfindung betrifft ein Verfahren zur Herstellung ferroelektrischer Speicherzellen nach dem Stackprinzip, wobei zwischen einer unteren Kondensatorelektrode (6) eines Speicherkondensators und einem darunter gebildeten leitenden Plug (1), der zur elektrischen Verbindung dieser Kondensatorelektrode (6) mit einer Transistorelektrode eines in oder auf einem Halbleiterwafer gebildeten Auswahltransistors dient, eine Haftschicht (2, 3) und über der Haftschicht eine Sauerstoffdiffusionsbarriere (4, 5) gebildet und nach der Abscheidung des Ferroelektrikums einem RTP-Schritt in einer Sauerstoffatmosphäre unterworfen werden, wobei das Verfahren durch folgende Schritte gekennzeichnet ist: (A) Ermittlung der Oxidationsgeschwindigkeit der Haftschicht (2, 3) und des Diffusionskoeffizienten (D¿Sauerstoff?(T)) von Sauerstoff im Material der Haftschicht (2, 3) in Abhängigkeit von der Temperatur (T); (B) Ermittlung des Diffusionskoeffizienten (D¿Silizium?(T)) von Silizium in dem Material der Haftschicht (2, 3) in Abhängigkeit von der Temperatur und (C) Berechnung eines optimalen Temperaturbereichs für den RTP-Schritt aus den zuvor ermittelten beiden Diffusionskoeffizienten (D¿Sauerstoff?(T) und D¿Silizium?(T)) für eine vorgegebene Schichtdicke (dBARR) und Sauerstoffdiffusionsbarriere, so dass während des RTP-Schritts die Silizidierung der Haftschicht schneller abläuft als ihre Oxidation.
PCT/DE2002/001054 2001-03-23 2002-03-22 Verfahren zur herstellung ferroelektrischer speicherzellen WO2002078084A2 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP02727262A EP1371093A2 (de) 2001-03-23 2002-03-22 Verfahren zur herstellung ferroelektrischer speicherzellen
KR1020037012312A KR100579337B1 (ko) 2001-03-23 2002-03-22 강유전성 메모리 셀 제조 방법
JP2002576015A JP2004526320A (ja) 2001-03-23 2002-03-22 強誘電性記憶セルの製造方法
US10/669,072 US6806097B2 (en) 2001-03-23 2003-09-23 Method for fabricating ferroelectric memory cells

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10114406A DE10114406A1 (de) 2001-03-23 2001-03-23 Verfahren zur Herstellung ferroelektrischer Speicherzellen
DE10114406.7 2001-03-23

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/669,072 Continuation US6806097B2 (en) 2001-03-23 2003-09-23 Method for fabricating ferroelectric memory cells

Publications (2)

Publication Number Publication Date
WO2002078084A2 WO2002078084A2 (de) 2002-10-03
WO2002078084A3 true WO2002078084A3 (de) 2003-03-13

Family

ID=7678800

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2002/001054 WO2002078084A2 (de) 2001-03-23 2002-03-22 Verfahren zur herstellung ferroelektrischer speicherzellen

Country Status (7)

Country Link
US (1) US6806097B2 (de)
EP (1) EP1371093A2 (de)
JP (1) JP2004526320A (de)
KR (1) KR100579337B1 (de)
CN (1) CN1331215C (de)
DE (1) DE10114406A1 (de)
WO (1) WO2002078084A2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113421881B (zh) * 2021-05-26 2022-08-19 复旦大学 通过金属扩散调节铁电存储器表面层有效厚度的方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999028972A1 (en) * 1997-11-28 1999-06-10 Motorola Inc. Semiconductor device with ferroelectric capacitor dielectric and method for making
US5932907A (en) * 1996-12-24 1999-08-03 International Business Machines Corporation Method, materials, and structures for noble metal electrode contacts to silicon
WO2000039842A1 (de) * 1998-12-23 2000-07-06 Infineon Technologies Ag Kondensatorelektrodenanordnung
DE10014315A1 (de) * 1999-03-26 2000-10-05 Sharp Kk Halbleiterspeicher und Verfahren zur Herstellung desselben

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Publication number Priority date Publication date Assignee Title
US5046043A (en) * 1987-10-08 1991-09-03 National Semiconductor Corporation Ferroelectric capacitor and memory cell including barrier and isolation layers
US5434102A (en) * 1991-02-25 1995-07-18 Symetrix Corporation Process for fabricating layered superlattice materials and making electronic devices including same
WO1992019564A1 (en) * 1991-05-01 1992-11-12 The Regents Of The University Of California Amorphous ferroelectric materials
JPH09102591A (ja) * 1995-07-28 1997-04-15 Toshiba Corp 半導体装置及びその製造方法
DE19640243A1 (de) * 1996-09-30 1998-04-09 Siemens Ag Kondensator mit einer Sauerstoff-Barriereschicht und einer ersten Elektrode aus einem Nichtedelmetall
KR20010013595A (ko) * 1997-06-09 2001-02-26 엔, 마이클 그로브 개선된 장벽 특성을 나타내는 결정 퍼로브스카이트강유전체 셀을 어닐링하는 방법
KR100279297B1 (ko) * 1998-06-20 2001-02-01 윤종용 반도체 장치 및 그의 제조 방법
WO2000049660A1 (en) * 1999-02-16 2000-08-24 Symetrix Corporation Iridium oxide diffusion barrier between local interconnect layer and thin film of layered superlattice material
JP4150154B2 (ja) * 2000-08-21 2008-09-17 株式会社ルネサステクノロジ 半導体集積回路装置

Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
US5932907A (en) * 1996-12-24 1999-08-03 International Business Machines Corporation Method, materials, and structures for noble metal electrode contacts to silicon
WO1999028972A1 (en) * 1997-11-28 1999-06-10 Motorola Inc. Semiconductor device with ferroelectric capacitor dielectric and method for making
WO2000039842A1 (de) * 1998-12-23 2000-07-06 Infineon Technologies Ag Kondensatorelektrodenanordnung
DE10014315A1 (de) * 1999-03-26 2000-10-05 Sharp Kk Halbleiterspeicher und Verfahren zur Herstellung desselben

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
M. HEINTZE, A. CATANA, P.E. SCHMID, F. LÉVY, P. STADELMANN AND P. WEISS: "Oxygen impurity effects on the formation of thin titanium silicide films by rapid thermal annealing", J. PHYS. D: APPL. PHYS., vol. 23, 1990, pages 1076 - 1081, XP001124373 *
WEE A T S, HUAN A C H, THIAN W H, TAN K L, HOGAN R,: "INVESTIGATION OF TITANIUM SILICIDE FORMATION USING SECONDARY ION MASS SPECTROMETRY", MAT. RES.SOC.SYMP.PROC., vol. 342, 1994, Pittsburgh, USA, pages 117 - 122, XP008010645 *

Also Published As

Publication number Publication date
CN1518766A (zh) 2004-08-04
KR100579337B1 (ko) 2006-05-12
US6806097B2 (en) 2004-10-19
WO2002078084A2 (de) 2002-10-03
DE10114406A1 (de) 2002-10-02
EP1371093A2 (de) 2003-12-17
US20040157345A1 (en) 2004-08-12
KR20030085034A (ko) 2003-11-01
CN1331215C (zh) 2007-08-08
JP2004526320A (ja) 2004-08-26

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