WO2002078024A1 - Condensateur en couches minces, composant electronique en couches minces et leur procede de fabrication - Google Patents

Condensateur en couches minces, composant electronique en couches minces et leur procede de fabrication Download PDF

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Publication number
WO2002078024A1
WO2002078024A1 PCT/JP2002/001674 JP0201674W WO02078024A1 WO 2002078024 A1 WO2002078024 A1 WO 2002078024A1 JP 0201674 W JP0201674 W JP 0201674W WO 02078024 A1 WO02078024 A1 WO 02078024A1
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WO
WIPO (PCT)
Prior art keywords
dielectric layer
thin film
film capacitor
lower electrode
insulating substrate
Prior art date
Application number
PCT/JP2002/001674
Other languages
English (en)
Japanese (ja)
Inventor
Toshihide Nabatame
Masahiko Ogino
Shigehisa Motowaki
Seiji Watahiki
Toshiya Satoh
Hideshi Fukumoto
Yoko Furukawa
Original Assignee
Hitachi, Ltd.
Akamine, Hitoshi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi, Ltd., Akamine, Hitoshi filed Critical Hitachi, Ltd.
Publication of WO2002078024A1 publication Critical patent/WO2002078024A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors

Definitions

  • the present invention relates to a thin film capacitor, a thin film electronic component, and a method of manufacturing the same.
  • the present invention relates to a thin film capacitor and a passive element built-in electronic component that can be used for various wireless communication devices such as a mobile phone or other various electronic devices and a method for manufacturing the same.
  • a conventional capacitor is formed in a laminated form of 10 to L00 m thick in which a plurality of electrode layers and an inorganic dielectric layer are laminated.
  • the temperature required for crystallization, grain growth, and sintering of inorganic dielectrics using high dielectric constant materials is extremely high, around 1000 ° C. For this reason, a withstand voltage cannot be obtained unless a film having a thickness of several tens / zm or more is generally formed.
  • an LCR resonance circuit is formed by disposing a capacitor and an inductor as separate components on a module substrate and connecting them with wiring. What was used is used. However, further reductions in the size of LCR resonance circuits are required due to the reduction in weight and the number of parts in portable devices. Therefore, the development of the capacitor part is progressing toward a thin-film capacitor, built in a thin-film multilayer substrate, and achieving high integration.
  • Bell Labs Technica 1 Journal July-September P.116 discloses an example in which a capacitor, an inductor, and a resistor are formed in a multilayer substrate.
  • Hei 4-302117 discloses that in a thin film capacitor composed of a substrate / lower electrode Z, a dielectric thin film Z, and an upper electrode, after forming a dielectric thin film, heat treatment is performed in an oxidizing atmosphere at 300-1000 ° C. There is disclosure.
  • An object of the present invention is to provide a small-sized, high-capacity thin-film capacitor, a low-loss electronic component with a built-in passive element that is a LCR filter, and a small, low-cost, high-frequency module equipped with the LCR filter. And Disclosure of the invention
  • the gist of the invention is as follows.
  • a thin-film capacitor in which a plurality of dielectric layers having both sides in the stacking direction of a dielectric film sandwiched between electrodes are formed on an insulating substrate, wherein the dielectric layers are an inorganic dielectric layer and an organic dielectric layer. It is a thin film capacitor composed of layers.
  • a thin-film capacitor in which a dielectric layer sandwiched between electrodes on both sides in the direction of lamination of a dielectric film on an insulating substrate is a thin film capacitor in which a main lower electrode and a sub-lower electrode are arranged in parallel on an insulating substrate.
  • a thin-film capacitor in which a dielectric layer sandwiched by electrodes on both sides in the stacking direction of a dielectric film is formed on an insulating substrate in a plurality of layers, and a main lower electrode and a sub-lower electrode are arranged in parallel on the insulating substrate.
  • a thin film capacitor having an inorganic dielectric layer formed on an upper surface of the main lower electrode, and a laminated dielectric layer of an inorganic dielectric layer and an organic dielectric layer formed on an upper surface of the sub lower electrode.
  • the inorganic dielectric layer can be formed wide in the projection direction of the sub-upper electrode, there is an effect that the processing dimension can be made large.
  • Another aspect of the present invention is a thin film capacitor comprising a plurality of dielectric layers sandwiched between electrodes on both sides of a dielectric film in a stacking direction on an insulating substrate, wherein a main lower electrode is provided on the insulating substrate. And an auxiliary dielectric layer are formed in parallel, an inorganic dielectric layer is formed on the upper surface of the main lower electrode, and an organic dielectric layer is formed on the upper surface of the auxiliary lower electrode.
  • the processing size of the upper electrode of the uppermost layer can be increased, it has a feature of excellent processing controllability.
  • a thin-film capacitor in which a dielectric layer sandwiched between electrodes on both sides in the stacking direction of a dielectric film is formed on an insulating substrate in a plurality of layers, and a main lower electrode and a sub-lower electrode are arranged in parallel on the insulating substrate.
  • an inorganic dielectric layer is formed on the upper surface of the main lower electrode, and a laminated dielectric layer of an inorganic dielectric layer and an organic dielectric layer is formed on the upper surface of the sub lower electrode.
  • the lower electrode is formed as a first layer on the insulating substrate.
  • the lower electrode may be formed after forming an organic dielectric layer or an inorganic dielectric layer on an insulating substrate.
  • the entire other surface may be covered with the inorganic dielectric layer.
  • steatite Mg_ ⁇ one S i0 2
  • Forusuteraito MgO-Si0 2
  • alumina, magnesia, Si0 2, Si, glass, glass epoxy, an organic film, even using a resin substrate Fabrication is possible.
  • the organic dielectric a material having a heat resistance of 180 ° C. or more and having excellent heat resistance is preferable, and in particular, polyimide, polybismaleide, polyesterimide, polyamideimide, benzocyclobutene, and those obtained by making them porous are preferable. May be used.
  • the inorganic dielectric organic dielectric having a relative dielectric constant several times greater than the material good preferred, particularly TaOx, T i Ox, SrTi03, CaTi03, MgTi03, BaT i 03 3 (Ba 3 S r) Ti_ ⁇ 3, PbTi03, Pb (Zr, Ti) 03, (Pb, La) (Zr, Ti) 03, Pb (Mg, Nb) 03, or a combination thereof may be used.
  • Ag, Au, Pt, Ag-Fd A1 may be used for the upper and lower electrodes.
  • Cr, Ti, Mo, TiN, TiZW, Ta, TaN, etc. may be interposed.
  • Another feature of the present invention that achieves the above object is achieved by providing a plurality of thin film capacitors, inductors, and resistors on an insulating substrate.
  • Another feature of the present invention that achieves the above-mentioned object is that the above-mentioned small-sized, high-capacity thin-film capacitor, the inductor and the resistor are formed on the same insulating substrate, and the LCR of the small-sized, low-loss electronic component embedded in a passive element is realized. Fill evening can be made. Also, by manufacturing the above-mentioned thin film capacitor and the electronic component with a built-in passive element at a temperature of 250 ° C. or less, a small-sized high-capacity thin film capacitor can be stably manufactured.
  • a small-sized and low-loss LCR-filled chip-type element can be manufactured, and further, the chip-type element is mounted.
  • the high-frequency compatible module can be reduced in size by reducing the mounting area of the filter section, and can be reduced in cost by reducing the number of components.
  • FIG. 2 is a schematic diagram of the thin film capacitor of the present invention.
  • FIG. 4 is a schematic diagram illustrating an example of a layer configuration of the thin film capacitor of the present invention.
  • FIG. 5 is a schematic diagram of the lower electrode of the present invention.
  • FIG. 10 is a schematic diagram showing a high-frequency module according to the present invention. BEST MODE FOR CARRYING OUT THE INVENTION
  • FIG. 1 schematically shows an example of the layer configuration of the thin film capacitor of the present invention.
  • 1 is an insulating substrate
  • 2 is a lower electrode
  • 3 is an inorganic dielectric layer
  • 4 is an organic dielectric layer
  • 5a is a main upper electrode
  • 5b is a sub upper electrode.
  • the structure of the lower electrode 2 will be described with reference to FIGS. 1 and 2.
  • a contact hole is drawn from one end of the lower electrode 2 to the same plane as the upper electrode 5 on the organic dielectric layer 4.
  • a typical method of manufacturing the thin film capacitor shown in FIG. 1 will be described.
  • the insulating substrate 1 an aluminosilicate glass having a thickness of 0.5 mm opposite to that of f was used.
  • the strain point is 650 ° C.
  • Cr / Cu was first formed at 50 nm / 1 / m by the sputtering method, and then processed in the order of resist formation, etching, and resist peeling, and was patterned.
  • a patterned Cu lower electrode 2 was formed by forming a 10 nm thick Cu by a Cu plating method and then forming a Cr with a 50 nm protective film.
  • the organic dielectric layer 4 is made of a polyimide resin PIQ (polyimide iso-indoloquinazolinedione) having a low coefficient of thermal expansion (5 x 1 (T 6 / ° C).
  • the resin layer is made of N-methyl-2-pyrrolidone.
  • the contact hole of the lower electrode 2 of Cr / Cu / Cr 50 nm / 10 / m / 50 nm
  • the electrode 5a and the sub upper electrode 5b were produced.
  • the thin film capacitor manufactured by the above method showed no cracking or film peeling of the capacitor part, and also had excellent protection resistance to water.
  • the insulating substrate is made of a material that has a small thermal strain at a temperature of 250 ° C, it is possible to fabricate a thin film capacitor that combines high capacity, miniaturization, and capacity adjustment.
  • the thin film capacitor manufactured by the above method was effective in improving the product yield and the like because the processing dimensions of the inorganic dielectric 3 were gradual in accuracy.
  • FIGS. 4 and 5 show a cross-sectional view and a schematic diagram of a thin film capacitor in which the lower electrode 2 is separated into two parts.
  • the insulating substrate 1 an aluminoporous glass substrate having a thickness of 0.5 mm was used. The strain point is 650 ° C.
  • Cr ZCu was first formed at 5 Onm / l ⁇ m by a sputtering method, and then processed in the order of resist formation, etching, and resist peeling, followed by patterning.
  • the patterning structure includes a main lower electrode 2a and a sub lower electrode 2b.
  • a main lower electrode 2a and a sub-lower electrode 2b were formed by forming a 1-Om-thick Cu film and then applying a 50-nm protective film of Cr and patterned.
  • Ta0X was formed as the inorganic dielectric layer 3 by a sputtering method with a thickness of 0.5 Aim without heating the substrate.
  • a process of forming a resist, an etching process, and a resist stripping process were performed, and the coating process was performed to form the inorganic dielectric layer 3 only on the main lower electrode 2a.
  • the organic dielectric layer 4 and the upper electrode 5 were produced in the same manner as in the first embodiment.
  • the thin-film capacitor did not crack in the capacitor portion and did not peel off the film, and had excellent protection against water.
  • the thin film capacitor in which the inorganic dielectric 3 was formed not only on the main lower electrode 2a but also on the sub lower electrode 2b, the capacitor portion cracked and the film peeled off. No protection was observed, and the protection against water was excellent.
  • the composite capacitance is the same as that of the second embodiment, and is composed of a capacitor composed of an inorganic dielectric layer and a capacitor composed of an organic dielectric layer 4 in C 2.
  • FIG. 7 schematically shows a composite thin film capacitor having a structure in which a plurality of capacitors are provided on one insulating substrate.
  • the electrodes, organic dielectric, inorganic dielectric material, and manufacturing method are the same as those in the first embodiment.
  • Figure 7 shows an aggregate of three thin-film capacitors, which is a miniaturized high-capacity thin-film capacitor. As in the case of the individual thin-film capacitors, the composite assembly did not show any cracking or film peeling of the capacitor part, and also had excellent protection against water.
  • Fig. 8 shows the cross-sectional configuration of an LCR filter having a structure in which a plurality of capacitors, a plurality of inductors, and a plurality of resistors are provided on a substrate.
  • the thin film capacitor 6 was formed using the method of Examples 1-4.
  • the inductor 8 used Cu of 10 m thickness formed by plating.
  • the resistor 7 was prepared by using a TaN method with a thickness of 10 ⁇ m by a sputtering method.
  • the electrodes of the thin film capacitor 6, the resistor 7, and the inductor 8 were pulled out to the uppermost layer in the same manner as in Example 1.
  • Figure 8 shows a single thin-film capacitor 6, a resistor 7, and an inductor 8. The high-frequency characteristics of the Q (1 / t and) value of the It exhibited low loss characteristics of 100 @ 1 GHz.
  • the material of the resistor is described for T a N, but the resistance value is from several ⁇ to several ⁇ . Any material can be used as long as it can cover a wide range, particularly Ni—Cr and Ni—P. (Example 6)
  • Fig. 9 shows a schematic diagram of the chip type device of the LCR filter. After fabricating an LCR film composed of a plurality of thin film capacitors 6, a resistor 7, and an inductor 8 produced in Example 5, an organic dielectric layer 4c and a wiring 9 were formed. A protective layer having a body layer of 4 d was formed. Finally, external terminals 10 were formed as bumps using Pb-Sn solder, and chip-type elements 11 were fabricated.
  • FIG. 10 shows a high-frequency module 13 in which 11 chip-type elements are mounted on the electrode wiring 12.
  • the chip-type element 11 has a 2x1x0.8 mm thickness (excluding the pump thickness) and is approximately 1/8 the area compared to the case where capacitors and inductors are surface-mounted as separate components. Losses as LCR fills also improved by more than 3%.
  • the production stability was high due to the low temperature manufacturing process of 250 ° C, and the chip-type element 11 could be manufactured with a yield exceeding 95%.
  • the module was reduced in size. Was realized.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

L'invention concerne un condensateur en couches minces petit et à haute capacité ainsi qu'un composant électronique contenant un élément passif, c'est-à-dire un filtre LCR à faible perte, et un module permettant des hautes fréquences, petit et de faible coût, sur lequel est monté le filtre LCR. Le condensateur en couches minces comprend une pluralité de couches diélectriques formées sur un substrat isolant tout en prenant en sandwich les faces opposées d'une couche mince diélectrique dans le sens des couches avec des électrodes, la couche diélectrique comprenant une couche diélectrique inorganique ainsi qu'une couche diélectrique organique; et l'invention concerne aussi un composant électronique en couches minces ainsi que son procédé de fabrication.
PCT/JP2002/001674 2001-03-16 2002-02-25 Condensateur en couches minces, composant electronique en couches minces et leur procede de fabrication WO2002078024A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001-76998 2001-03-16
JP2001076998A JP4177560B2 (ja) 2001-03-16 2001-03-16 薄膜コンデンサ及び受動素子内蔵電子部品と高周波対応モジュール

Publications (1)

Publication Number Publication Date
WO2002078024A1 true WO2002078024A1 (fr) 2002-10-03

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PCT/JP2002/001674 WO2002078024A1 (fr) 2001-03-16 2002-02-25 Condensateur en couches minces, composant electronique en couches minces et leur procede de fabrication

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JP (1) JP4177560B2 (fr)
MY (1) MY128174A (fr)
TW (1) TW594812B (fr)
WO (1) WO2002078024A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103489640A (zh) * 2012-06-11 2014-01-01 佛山市南海区欣源电子有限公司 超小型结构电容器的制造工艺

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2003242008A1 (en) 2002-07-18 2004-02-09 Hitachi Chemical Co., Ltd. Multilayer wiring board, method for producing the same, semiconductor device and radio electronic device
US7161793B2 (en) 2002-11-14 2007-01-09 Fujitsu Limited Layer capacitor element and production process as well as electronic device
US7224040B2 (en) 2003-11-28 2007-05-29 Gennum Corporation Multi-level thin film capacitor on a ceramic substrate
US8569142B2 (en) 2003-11-28 2013-10-29 Blackberry Limited Multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same
US20060217102A1 (en) * 2005-03-22 2006-09-28 Yinon Degani Cellular/Wi-Fi combination devices
CA2725460C (fr) * 2008-05-15 2017-11-07 Kovio, Inc. Dispositifs de surveillance avec multiples condensateurs
WO2011077918A1 (fr) * 2009-12-24 2011-06-30 株式会社村田製作所 Module de circuits
CN102468052B (zh) * 2010-11-08 2016-01-20 佛山市南海区欣源电子有限公司 有感串联结构高压薄膜电容器及制造方法
US8912890B2 (en) 2012-10-01 2014-12-16 Thin Film Electronics Asa Surveillance devices with multiple capacitors
KR20160000613A (ko) * 2014-06-25 2016-01-05 삼성전기주식회사 박막 커패시터
JP6557468B2 (ja) 2014-12-25 2019-08-07 ローム株式会社 チップ部品
WO2018003445A1 (fr) 2016-06-28 2018-01-04 株式会社村田製作所 Condensateur
JP6857329B2 (ja) * 2016-10-24 2021-04-14 大日本印刷株式会社 高周波部品及びその製造方法
CN113381715B (zh) 2021-06-21 2024-06-28 安徽安努奇科技有限公司 3d滤波电路与3d滤波器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6386413A (ja) * 1986-09-29 1988-04-16 ユニチカ株式会社 コンデンサ用薄膜誘電体材料の製造方法
JPH0376151A (ja) * 1989-08-18 1991-04-02 Nec Corp 容量素子
JPH08273978A (ja) * 1995-03-29 1996-10-18 Kyocera Corp 薄膜コンデンサ

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6386413A (ja) * 1986-09-29 1988-04-16 ユニチカ株式会社 コンデンサ用薄膜誘電体材料の製造方法
JPH0376151A (ja) * 1989-08-18 1991-04-02 Nec Corp 容量素子
JPH08273978A (ja) * 1995-03-29 1996-10-18 Kyocera Corp 薄膜コンデンサ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103489640A (zh) * 2012-06-11 2014-01-01 佛山市南海区欣源电子有限公司 超小型结构电容器的制造工艺

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Publication number Publication date
MY128174A (en) 2007-01-31
JP4177560B2 (ja) 2008-11-05
JP2002280261A (ja) 2002-09-27
TW594812B (en) 2004-06-21

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