594812 A7594812 A7
發明背景 <發明領域> l· I-.------·! (請先閲讀背面之注意事項再填寫本頁} 本發明係有關一種薄膜電容及一種被動元件內建型電 子零件，其適用於任何型式的無線電通訊設備（諸如無線 電δ舌）、或其他型式的電子設備，及有關一種其製造方法 0 <習知技術> 近來對於小型化高性能可攜式通訊設備之漸增的需求 需要更小型的電容。 傳統電容具有10-100 // m厚度之疊層結構，其包括多 數電極層及無機電介質層。無機電介質係由高電介質常數 的材料所製，且需要極高的溫度（約1 〇〇〇°C )以供結晶 化、微粒生長及燒結。因此，電容通常需被製造以不小於 數十// m之厚膜形式以利一高抵抗電壓。 曰本申請案專利公開編號1 1 -97287揭露一種撓性的 防裂電容，其被薄化以一有機電介質。 經濟部智慧財產局員工消費合作社印製 雜訊過濾器之傳統的被動元件內建型電子零件具有電 容及電感的分離零件，其被安裝於一模組板上且被佈線以 形成一 LCR共振電路。然而，可攜式通訊設備對於重量 及零件數之要求需要一更小型的LCR共振電路。因此， 薄膜電容被開發以用於電容部分，其被內建於一薄膜多層 板中以供更高密度的設計。貝爾（Bell )實驗室科技刊物 (七月至九月）第116頁（1 998 )描述一種範例，其中一 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -4- 594812 A7 B7 五、發明説明（2 ) 電容、電感及電阻被內建於一薄膜多層板中。 卜——------·! (請先閲讀背面之注意事項再填寫本頁) 日本申請案專利公開編號04-3021 17揭露一種薄膜電 容，其包括一基底/下電極/電介質薄膜/上電極，其中所形 成之電介質薄膜被熱處理以300至1000°C之溫度於一氧 化的大氣中。 如上所述，一大電容値的小型電容基本上需要電介質 層上之上電極的增大面積、高電介質材料之使用及電介質 之薄膜形式。 一電容具有如下列方程式所示之電容値C， C = ε ϊχ £ 0 xA/d 經濟部智慧財產局員工消費合作社印製 (其中er:電介質之相對電介質常數，ε0:真空之電介 質常數，Α:上電極之表面面積，d:電介質之厚度。） 曰本申請案專利公開編號n_97287揭露一種不大於 10 // m厚度之有機電介質，其可被形成於一有機膜或一樹 脂基底上以提供不大於04mm厚度之防裂的電容。然而， 有一問題，即其有機電介質具有介於3與4之間的相對電 介質常數，其係太低而無法提供大電容値的電容。 貝爾（Bell)實驗室，科技刊物（七月至九月）第 116頁（1 99 8 )，描述一種結構，其使用一相對電介質常 數約爲之ShN4電介質，其係太低而無法提供大電容値的 電容。此外，絕緣基底係由Si所製，其具有低的特定電 阻値以致其基底可能成爲高頻區中之一雜訊源，因此無法 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -5- 594812 A7 B7 五、發明説明（3 ) 提供一低損失的LCR過濾器。 (請先閱讀背面之注意事項再填寫本頁) 發明槪述 本發明之一目的係提供一種大電容値的小型薄膜電容 、一種被動元件內建型電子零件之低損失LCR過濾器、 及一種高頻之低價的小型模組’於其上安裝有該LCR過 濾器。 本發明可被槪述如下。 一種薄膜電容，其包括一絕緣基底、及多數形成於該 基底上之疊層結構，每一結構包括一電介質層及位於其兩 側上之電極，其中該多數結構包括一無機電介質層及一有 機電介質層。 經濟部智慧財產局員工消費合作社印製 一種薄膜電容，其包括一絕緣基底、及多數形成於該 基底上之疊層結構，每一結構包括一電介質層及位於其兩 側上之電極，其中該多數結構包括一無機電介質層及一形 成於該無機層之上表面上的主要上電極、一有機電介質層 及一形成於該有機層之上表面上的次要上電極，該主要上 電極係平行與該次要上電極。 一種薄膜電容，其包括一絕緣基底、及多數形成於該 基底上之疊層結構，每一結構包括一電介質層及位於其兩 側上之電極，其中該多數結構包括一無機電介質層及一形 成於該無機層之上表面上的主要上電極、一無機電介質層 及一有機層之疊片電介質層、及一形成於該等疊層之上表 面上的次要上電極，該主要上電極係平行與該次要上電極 本紙張尺度適用中國國家標準（CNS ) A4規格（21〇χ297公董） -6 - 594812 A7 B7 五、發明説明（4) 0 一種薄膜電容，其包括一絕緣基底、及多數形成於該 基底上之疊層結構，每一結構包括一電介質層及位於其兩 側上之電極，其中該多數結構包括一主要下電極及一次要 下電極，其係平行地形成於該絕緣基底上、一形成於該主 要下電極之上表面上的無機電介質層、一形成於該次要下 電極之上表面上的有機電介質層。 一種薄膜電容，其包括一絕緣基底、及多數形成於該 基底上之疊層結構，每一結構包括一電介質層及位於其兩 側上之電極，其中該多數結構包括一主要下電極及一次要 下電極，其係平行地形成於該絕緣基底上、一形成於該主 要下電極之上表面上的無機電介質層、一有機電介質層及 一無機層之疊片電介質層，其係形成於該次要下電極之上 表面上。於此例中，無機電介質層可被形成於一寬廣區域 ’其包含一使次要上電極被朝下投射於其上的面積，以致 其層具有一較大的工作尺寸。 本發明之另一實施例係由一種薄膜電容所實現，此薄 膜電容包括一絕緣基底、及多數形成於該基底上之疊層結 構’每一結構包括一電介質層及位於其兩側上之電極，其 中該多數結構包括一主要下電極及一次要下電極，其係平 行地形成於該絕緣基底上、一形成於該主要下電極之上表 面上的無機電介質層、一形成於該次要下電極之上表面上 的有機電介質層。於此實施例中，位於頂層上之上電極可 具有一較大的工作尺寸，其可實現一良好的工作可控制性 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公董） 卜 1------·! (請先閱讀背面之注意事項再填寫本頁〕 -訂 經濟部智慧財產局員工消費合作社印製 594812 A7 B7 五、發明説明（5 ) 〇 (請先閱讀背面之注意事項再填寫本頁) 此外，最好是達成一種薄膜電容，其包括一絕緣基底 、及多數形成於該基底上之疊層結構，每一結構包括一電 介質層及位於其兩側上之電極，其中該多數結構包括一主 要下電極及一次要下電極，其係平行地形成於該絕緣基底 上、一形成於該主要下電極之上表面上的無機電介質層、 一有機電介質層及一形成於該次要下電極之上表面上的無 機層之疊片電介質層。 該下電極已被描述爲一形成於絕緣基底上之第一層， 但是無須限定於此，而一有機電介質層或一無機電介質層 可先被形成於絕緣基底之上，在下電極被形成之前。 假如下電極之一部分可被提供以一額外的電極，其朝 上延伸於一疊層方向以覆蓋頂部表面，則下電極之另一部 分可被整個覆蓋以無機電介質層。 絕緣基底可由塊滑石（Mg〇-Si〇〇 、鎂橄欖石（ MgO-Si〇2)、氧化鋁、氧化鎂、Si〇2、Si、玻璃、環氧玻 璃、有機膜、及樹脂基底所製，以製造薄膜電容。 經濟部智慧財產局員工消費合作社印製 該有機電介質最好可爲良好的耐火材料，其可被使用 在不低於180°C之溫度。明確地，有機電介質可爲一聚醯 亞胺、聚雙蜜醯亞胺、聚酯醯亞胺、聚醯胺-醯亞胺、苯 倂環丁烯、由其所製之多孔材料。 該無機電介質最好可爲其具有相對電介質常數爲有機 電介質的數倍以上之材料。明確地，無機電介質可爲 Ta〇x，Ti〇x，SrTiCh，CaTi〇3, MgTioh BaTiCh，（Ba，Sr)Ti〇3, 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） " -8 - 594812 A7 B7 五、發明説明（6)Background of the invention < Field of invention > l · I -.------ ·! (Please read the precautions on the back before filling out this page} The present invention relates to a film capacitor and a passive electronic component built-in electronic part , Which is suitable for any type of radio communication equipment (such as a radio delta tongue), or other types of electronic equipment, and a method for manufacturing the same 0 < known technology > Increasing demand requires smaller capacitors. Traditional capacitors have a laminated structure with a thickness of 10-100 // m, which includes most electrode layers and inorganic dielectric layers. Inorganic dielectrics are made of materials with a high dielectric constant, and require extremely High temperature (about 1000 ° C) for crystallization, particle growth and sintering. Therefore, capacitors usually need to be manufactured in the form of a thick film of not less than several tens of meters to facilitate a high withstand voltage. Application Patent Publication No. 1 1-97287 discloses a flexible anti-crack capacitor that has been thinned to an organic dielectric. The traditional passive element of a noise filter printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The built-in electronic parts have discrete parts of capacitance and inductance, which are mounted on a module board and wired to form an LCR resonance circuit. However, the requirements for the weight and number of parts of portable communication equipment need to be changed. Small LCR resonant circuit. Therefore, thin film capacitors have been developed for use in the capacitor section, which is built into a thin film multilayer board for higher density designs. Bell Labs Science and Technology Publication (July to September ) Page 116 (1 998) describes an example in which a paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -4- 594812 A7 B7 V. Description of the invention (2) Capacitance, inductance and resistance are Built in a thin film multilayer board. ————————! (Please read the precautions on the back before filling this page) Japanese Patent Application Publication No. 04-3021 17 discloses a thin film capacitor, which includes A substrate / lower electrode / dielectric film / upper electrode in which the formed dielectric film is heat-treated at a temperature of 300 to 1000 ° C in an oxidizing atmosphere. As described above, a large capacitor / small capacitor is basically Requires an increased area of the upper electrode on the dielectric layer, the use of high-dielectric materials, and a thin film form of the dielectric. A capacitor has a capacitance as shown in the following equation 値 C, C = ε ϊχ £ 0 xA / d Intellectual Property Bureau, Ministry of Economic Affairs Printed by an employee consumer cooperative (where er: the relative dielectric constant of the dielectric, ε0: the dielectric constant of the vacuum, A: the surface area of the upper electrode, d: the thickness of the dielectric.) // An organic dielectric with a thickness of m can be formed on an organic film or a resin substrate to provide a crack-resistant capacitor with a thickness of not more than 04 mm. However, there is a problem that the organic dielectric has a relative dielectric constant between 3 and 4, which is too low to provide a large capacitance. Bell Labs, Science and Technology Journal (July to September), page 116 (1 99 8), describes a structure that uses a dielectric with a relative dielectric constant of about ShN4, which is too low to provide large capacitance値 capacitor. In addition, the insulating substrate is made of Si, which has a low specific resistance so that its substrate may become a source of noise in the high-frequency region, so it is not possible to apply the Chinese National Standard (CNS) A4 specification (210X297 mm) to this paper size ) -5- 812812 A7 B7 V. Description of the invention (3) Provide a low loss LCR filter. (Please read the precautions on the back before filling out this page.) Description of the invention One object of the present invention is to provide a small capacitor with a large capacitance, a low loss LCR filter with built-in electronic components for passive components, and a high The low-cost, compact module 'has the LCR filter mounted on it. The present invention can be described as follows. A thin film capacitor includes an insulating substrate and a plurality of stacked structures formed on the substrate. Each structure includes a dielectric layer and electrodes on two sides thereof. The majority structure includes an inorganic dielectric layer and an organic layer. Dielectric layer. The Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs has printed a thin film capacitor, which includes an insulating substrate and a plurality of laminated structures formed on the substrate. Each structure includes a dielectric layer and electrodes on both sides of the substrate. Most structures include an inorganic dielectric layer and a primary upper electrode formed on an upper surface of the inorganic layer, an organic dielectric layer, and a secondary upper electrode formed on the upper surface of the organic layer. The primary upper electrodes are parallel With the secondary upper electrode. A thin film capacitor includes an insulating substrate and a plurality of stacked structures formed on the substrate. Each structure includes a dielectric layer and electrodes on two sides thereof, wherein the majority structure includes an inorganic dielectric layer and a formed layer. A primary upper electrode on the upper surface of the inorganic layer, a laminated dielectric layer of an inorganic dielectric layer and an organic layer, and a secondary upper electrode formed on the upper surface of the stacked layers. The primary upper electrode system Parallel to the secondary upper electrode, the paper size is in accordance with the Chinese National Standard (CNS) A4 specification (21 × 297 public directors) -6-594812 A7 B7 V. Description of the invention (4) 0 A thin film capacitor comprising an insulating substrate, And a plurality of stacked structures formed on the substrate, each structure including a dielectric layer and electrodes on both sides thereof, wherein the plurality of structures include a main lower electrode and a secondary lower electrode, which are formed in parallel to the On the insulating substrate, an inorganic dielectric layer formed on the upper surface of the primary lower electrode, and an organic dielectric layer formed on the upper surface of the secondary lower electrode. A thin film capacitor includes an insulating substrate and a plurality of stacked structures formed on the substrate. Each structure includes a dielectric layer and electrodes on two sides thereof, wherein the majority structure includes a main lower electrode and a secondary electrode. The lower electrode is formed on the insulating substrate in parallel, an inorganic dielectric layer, an organic dielectric layer, and a laminated dielectric layer formed on the upper surface of the main lower electrode. To the upper surface of the lower electrode. In this example, the inorganic dielectric layer may be formed over a wide area ′ which includes an area on which the secondary upper electrode is projected downward so that its layer has a larger working size. Another embodiment of the present invention is realized by a thin film capacitor. The thin film capacitor includes an insulating substrate and a plurality of stacked structures formed on the substrate. Each structure includes a dielectric layer and electrodes on both sides thereof. The majority structure includes a primary lower electrode and a secondary lower electrode, which are formed in parallel on the insulating substrate, an inorganic dielectric layer formed on the upper surface of the primary lower electrode, and formed in the secondary lower electrode. Organic dielectric layer on the upper surface of the electrode. In this embodiment, the electrode located on the top layer can have a larger working size, which can achieve a good work controllability. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297). ------ ·! (Please read the precautions on the back before filling this page)-Order printed by the Intellectual Property Bureau Employee Consumer Cooperative of the Ministry of Economic Affairs 594812 A7 B7 V. Invention Description (5) 〇 (Please read the back Please fill in this page again.) In addition, it is best to achieve a thin film capacitor, which includes an insulating substrate and a multilayer structure formed on the substrate. Each structure includes a dielectric layer and electrodes on both sides. The majority structure includes a main lower electrode and a secondary lower electrode, which are formed in parallel on the insulating substrate, an inorganic dielectric layer formed on the upper surface of the main lower electrode, an organic dielectric layer, and a formed A laminated dielectric layer of an inorganic layer on the upper surface of the secondary lower electrode. The lower electrode has been described as a first layer formed on an insulating substrate, but need not be limited to this, An organic dielectric layer or an inorganic dielectric layer may be formed on the insulating substrate before the lower electrode is formed. It is assumed that a part of the following electrode may be provided with an additional electrode which extends upward in a lamination direction to Covering the top surface, the other part of the lower electrode may be entirely covered with an inorganic dielectric layer. The insulating substrate may be made of talc (Mg0-Si〇〇, forsterite (MgO-Si〇2), alumina, magnesium oxide, Si 〇2, Si, glass, epoxy glass, organic film, and resin substrates to make thin film capacitors. The Intellectual Property Bureau of the Ministry of Economic Affairs employee cooperative prints the organic dielectric, which is preferably a good refractory material, which can be Used at a temperature of not less than 180 ° C. Specifically, the organic dielectric may be polyimide, polybismelimide, polyesterimide, polyimide-imide, phenylcyclobutene Porous material made by it. The inorganic dielectric material may preferably be a material having a relative dielectric constant that is several times or more of that of the organic dielectric material. Specifically, the inorganic dielectric material may be TaOx, TiOx, SrTiCh, CaTi. 3, MgTioh BaTiCh, (Ba, Sr) Ti〇3, this paper applies China National Standard Scale (CNS) A4 size (210X297 mm) " -8 - 594812 A7 B7 V. invention is described in (6)
PbTi〇3, Pb(Zr，Ti)〇3,（Pb，La)(Zr，Ti)〇3, Pb(Mg，Nb)〇3,或其 組合。PbTi〇3, Pb (Zr, Ti) 03, (Pb, La) (Zr, Ti) 03, Pb (Mg, Nb) 03, or a combination thereof.
上及下電極可爲Ag，Au，Pt，Ag-Pd，或Al。於下電極 與絕緣基底之間，可插入Cr，Ti，Mo, TiN，Ti/W，Ta，TaN 等以增加其間之附著。 欲達成上述目的之本發明的另一特徵可被實現以一絕 緣基底，於其上安裝有多數如上所述之薄膜電容、電感及 電阻。 絕緣基底可爲一矽基底、以及一玻璃基底，其可提供 較低的損失於一高頻帶中。依據此特徵，雖然矽基底之低 電阻率可作用爲一導體損失零件（其使得低損失之薄膜電 容及電感的製造複雜化），但是絕緣基底中所使用之玻璃 的高電阻可提供低損失的薄膜電容及電感。 欲達成上述目的之本發明的另一特徵可被實現以一大 電容値之小型薄膜電容、電感及電阻，其均被建構於同一 絕緣基底上以提供LCR過濾器之一低損失的被動元件內 建型電子零件。 上述薄膜電容及被動元件內建型電子零件的製造在不 高於25(TC之溫度下可穩定地提供一大電容値之小型薄膜 電容。由無機電介質所製之傳統電容需要約l〇〇(TC之極 高溫的熱處理，以致其電容可能易於產生一低電介質常數 之反應產物層在上/下電極與無機電介質之間的介面上。 此導致一問題，即其所得的電容値可能低於目標値。依據 本發明，以低不高於250°C之低溫的製造可避免產生其介 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ------- (請先閲讀背面之注意事項再填寫本頁)The upper and lower electrodes may be Ag, Au, Pt, Ag-Pd, or Al. Between the lower electrode and the insulating substrate, Cr, Ti, Mo, TiN, Ti / W, Ta, TaN, etc. can be inserted to increase the adhesion therebetween. Another feature of the present invention to achieve the above object can be realized by an insulating substrate on which most of the film capacitors, inductors and resistors as described above are mounted. The insulating substrate can be a silicon substrate and a glass substrate, which can provide lower losses in a high frequency band. According to this feature, although the low resistivity of the silicon substrate can act as a conductor-loss component (which complicates the manufacture of low-loss film capacitors and inductors), the high resistance of the glass used in the insulating substrate can provide Film capacitors and inductors. Another feature of the present invention to achieve the above object can be realized as a small film capacitor, inductor and resistor with a large capacitance, which are all constructed on the same insulating substrate to provide a low loss passive element of the LCR filter. Built electronic parts. The manufacture of the above-mentioned thin film capacitors and passive component built-in electronic parts can stably provide small film capacitors with a large capacitance at a temperature not higher than 25 ° C. Traditional capacitors made of inorganic dielectrics require about 100 ( The extremely high temperature heat treatment of TC, so that its capacitance may easily produce a low dielectric constant reaction product layer on the interface between the upper / lower electrode and the inorganic dielectric. This leads to a problem that the resulting capacitance 値 may be lower than the target値. According to the present invention, manufacturing at a low temperature of not higher than 250 ° C can avoid the occurrence of its paper size. Applicable to China National Standard (CNS) A4 specification (210X297 mm) ------- (please first (Read the notes on the back and fill out this page)
、1T ^91. 經濟部智慧財產局員工消費合作社印製 -9- 594812 A7 _ B7 五、發明説明（7 ) 於上/下電極與無機電介質間之介面上的反應產物層，因 而可實現具目標大電容値之薄膜電容。 (請先閲讀背面之注意事項再填寫本頁) 如上所述之被動元件內建型電子零件可提供額外的終 端以提供一晶片型裝置之低損失的小型LCR過濾器。再 者，一高頻之模組（於其上安裝有該晶片型裝置）可具有 過濾器部分之一減小的封裝面積（其可縮小模組），且可 具有減少的組件數（其可實現減低的成本）。 圖形簡述 圖1顯示依據本發明之薄膜電容的疊層結構之一範例 的槪圖。 圖2顯示依據本發明之薄膜電容的範例之槪圖。 圖3顯示依據本發明之薄膜電容的疊層結構之另一範 例的槪圖。 圖4顯示依據本發明之薄膜電容的疊層結構之另一範 例的槪圖。 經濟部智慧財產局員工消費合作社印製 圖5顯示依據本發明之薄膜電容的下電極之一範例的 槪圖。 圖6顯示依據本發明之薄膜電容的疊層結構之另一範 例的槪圖。 圖7顯示依據本發明之薄膜電容的疊層結構之一範例 的槪圖。 圖8顯示依據本發明之LCR過濾器的疊層結構之一 範例的槪圖。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） -10- 594812 A7 B7 五、發明説明（8 ) 圖9顯示依據本發明的晶片型裝置之LCR過濾器的 疊層結構之一範例的槪圖。 (請先閲讀背面之注意事項再填寫本頁) 圖10顯示依據本發明之高頻模組的範例之槪圖。 主要元件對照表 1 絕 緣 基 底 2 下 電 極 2a 主 要 下 電 極 2b 次 要 下 電 極 3 ίκ j \\\ 機 電 介 質 層 4 有 機 電 介 質 層 4a，4b 有 機 電 介 質 層 5 a 主 要 上 電 極 5b 次 要 上 電 極 6 薄 膜 電 容 7 電 阻 8 電 感 9 佈 線 10 外 界 終 丄山 m 11 晶 片 型 裝 置 12 電 子 佈 線 13 高 頻 之 模 組 經濟部智慧財產局員工消費合作社印製 本發明之詳細敘述 本纸張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -11 - 594812 A7 _ B7 五、發明説明（9 ) 本發明將參考範例而被更詳細地描述如下。 (範例1 ) (請先閱讀背面之注意事項再填寫本頁) 圖1顯示依據本發明之薄膜電容的疊層結構之一範例 的槪圖。於圖1中，一數字丨代表一絕緣基底、2代表一 下電極、3代表一無機電介質層、4代表一有機電介質層 、5a代表一主要上電極、而5b代表一次要上電極。 參考圖1及2，下電極2之結構被描述：下電極2之 一末端被設置以一接觸孔，其朝上延伸以齊平與有機電介 質層4之上的上電極5。 經濟部智慧財產局員工消費合作社印製 用以製造如圖1中所示之薄膜電容的方法被描述如下 。絕緣基底1係由0.5 mm厚之硼鋁矽酸鹽玻璃基底所製 。此玻璃具有650°C之熱變形溫度。下電極2被形成如下 。首先，Cr/Cu被個別地濺射於50nm/l //m之厚度的基底 上。接著，抗蝕劑塗敷、蝕刻及抗蝕劑移除被執行，因而 Cr/Cu被成型。一 10//m厚之Cu被接著澱積以一種Cu電 鍍法，而50nm之Cr被澱積於其上以成爲一覆蓋，於是 一成型的下電極2被製造丨 一 10// m厚之Cu被接著澱積以一種Cu電鍍法，而 50nm之Cr被澱積於其上以成爲一覆蓋，於是一成型的下 電極2被製造。無機電介質層3之TaOx被接著濺射於 0.5 // m厚之未加熱基底上。接著，抗鈾劑塗敷、蝕刻及 抗鈾劑移除被執行，因而TaOx被成型以形成無機電介質 層3。 本紙張尺度適用中.國國家標準（CNS ) A4規格（210X297公釐） -12- 594812 A7 B7 五、發明説明（10) (請先閱讀背面之注意事項再填寫本頁) 有機電介質層4被接著形成如下。有機電介質層4係 由〜低熱擴散係數（5x 1(T6/°C )型式之聚醯亞胺基的樹 月旨PIQ (聚醯亞胺異吲哚并晴吖唑啉醌 isoindoloquiazolinedione)。此樹脂層被形成如下。首先 ’於一種 N -甲基-2 -啦略 D定酮（N - m e t y 1 - 2 - p y η. ο 1 i d ο n e )之 溶劑中的PIQ溶液被旋塗於基底上，並接著預烘烤以1 1 〇 °C於3分鐘內，然後暴露、顯影（顯影劑：氫化四甲基銨 )並成型，且熱硬化於250°C。有機電介質層4具有最終 厚度1 0 // m。層4被成型以具有空間，其將後續地被使用 以塡充下電極2之接觸孔及主要上電極5a之接觸孔。 抗蝕劑被接著塗敷，而Cr/Cu/Cr ( 50nm/10 // m/50nm )被澱積，以相同於下電極2之方式，於下電極2之接觸 孔、主要上電極5a及次要上電極5b。 經濟部智慧財產局員工消費合作社印製 圖2顯示如上述所製之薄膜電容的透視圖。頂層具有 電極幾何形狀，其中主要上電極5a與次要上電極5b被連 接，包含無機電介質層3之電容（如稱爲C1)與包含有 機電介質層4之電容（如稱爲C2 )被並聯以作用爲單一 電容（如稱爲C )。 所得的總電容値爲C = Cl + C2。其中Ta〇x具有相對 電介質常數24，其約爲聚醯亞胺基樹脂PIQ ( 3.5)的7 倍。TaOx具有0.5// m之厚度而聚醯亞胺基樹脂PIQ具有 10// m。電容値之式子C= ε ι·χ ε 0 X A/d將導致C1>C2 ，假設兩材料具有相同的A。C2具有C1之1 /140倍的低 電容値。因此C2可輕易地經歷電容値調整於不大於1 % 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） -13- 594812 A7 B7 _ 五、發明説明（11) 之小範圍內，其係甚小於C 1之値。其調整可藉由控制次 要上電極5b之表面積而被執行。 如上所製之薄膜電容並不具有可察覺的裂縫於電容部 分或者並無條紋狀的層，並且具有防水之良好保護性質。 如上所述之結果顯示其不大於250°C之低溫可製造一 種薄膜電容，其中電容値可被調整於不超過1 %之小範圍 內。 因此，由小的熱變形（於250°C )材料所製之絕緣基 底可製造具有良好電容値可調整性之大電容値的小型薄膜 電容。 (範例2 ) 如圖3所示，製造其被成型以如範例1所述之相同方 式的下電極2。無機電介質層3之Ta Ox被接著濺射於〇.5 A m厚之未加熱基底上。接著，抗鈾劑塗敷、蝕刻及抗蝕 劑移除被執行，因而TaOx被成型以形成無機電介質層3 。無機電介質層3被形成以延伸至一區域（以利次要上電 極5 b朝下投射於此區域上），以致其無機電介質層3可 具有較次要上電極5b更大的表面積。接著，有機電介晳 層4、主要上電極5a及次要上電極5b被形成以如範例1 中所述之相同方式。 包含無機電介質層3之電容（如稱爲ci)與包含無 機電介質層3及有機電介質層4之電容（如稱爲C2)被 並聯以作用爲單一電容（如稱爲C)。所得的總電容値爲 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） β .......-I - * —1= I 1 I I n I (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 -14- 594812 B7 五、發明説明（12) (請先閱讀背面之注意事項再填寫本頁) C=C1+C2。C2係得自其由一包含無機電介質層3之電容 (如稱爲C2a)及一包含有機電介質層4之電容（如稱爲 C2b )所組成之串聯電容，因而導致i/C2= 1/C2a+ 1/C2b ° C2主要係由包含有機電介質層4之C2b所決定，其具 有較有機電介質更低的電介質常數。因此，C2可輕易地 經歷小的電容値調整在不大於1 %之範圍內，其係甚小於 C 1之値，如同範例1之情況。 如上述所製之薄膜電容不具有可察覺的裂縫於電容部 分或者並無條紋狀的層，並且具有防水之良好保護性質。 如上述所製之薄膜電容亦具有一無機電介質層3，其 要求較不嚴格的準確性於工作尺寸上，其可增進產品之生 產率。 (範例3 ) Φ. 經濟部智慧財產局員工消費合作社印製 圖4及5個別地顯示一薄膜電容之橫斷面及槪圖，其 中下電極2被分割爲兩個次要電極。絕緣基底1係由 0 · 5 m m厚之硼鋁矽酸鹽玻璃基底所製。此玻璃具有6 5 0 °C 之熱變形溫度。下電極2被形成如下。首先，Ci./Cu被個 別地濺射於50nm/l // m之厚度的基底上。接著，抗蝕劑 塗敷、蝕刻及抗蝕劑移除被執行，因而Cr/Cu被成型。如 圖5中所示之成型結構包括主要下電極2a及次要下電極 2 b。一 1 〇 // ill厚之C u被接著丨殿積以一種C u電鍍法，而 5Onm之Cr被澱積於其上以成爲一覆蓋，於是一成型的主 要下電極2a被製造。無機電介質層3之Ta Ox被接著濺射 本紙張尺度適用中國國家標準（CNS )八4規格（210X297公釐) ' -15 - 594812 A7 _____B7 五、發明説明（13) (請先閱讀背面之注意事項再填寫本頁) 於0 · 5 // m厚之未加熱基底上。接著，抗蝕劑塗敷、蝕刻 及抗鈾劑移除被執行，因而TaΟX被成型以形成無機電介 質層3，其僅被澱積於主要下電極2a之上。接著，有機 電介質層4及上電極5被形成以如範例1中所述之相同方 式。 如上述所製之薄膜電容具有一所得的總電容値，其被 表示爲C = C 1 + C2，如範例1之情況。 已發現到在先期製造階段將電極成型爲分割的次要電 極可增進產品之生產率。如上述所製之薄膜電容不具有可 察覺的裂縫於電容部分或者並無條紋狀的層，並且具有防 水之良好保護性質。 參· 經濟部智慧財產局員工消費合作社印製 圖6顯示依據上述方法所製之薄膜電容的另一範例。 所示之電容具有無機電介質層3形成於主要下電極2a之 上以及次要下電極2b之上。此電容不具有可察覺的裂縫 於電容部分或者並無條紋狀的層，並且具有防水之良好保 護性質。所得之總電容値係相同於範例2中之電容値，其 中C係由包含無機電介質層3之電容及包含有機電介質 之電容所組成。 (範例4 ) 圖7顯示一組合薄膜電容（其具有絕緣基底1及多數 電容於其上）之槪圖。電極、有機電介質、無機電介質材 料及製造方法係相同於範例1中所述者。圖7顯示一組三 個薄膜電容，其每一均爲大電容値的小型薄膜電容。如同 本、^張尺度適用中國國家標準（〇~5)八4規格（210父297公釐） " -16- 594812 A7 __ B7 五、發明説明（14) (請先閲讀背面之注意事項再填寫本頁) 每一薄膜電容之情況，組合的薄膜電容組不具有可察覺的 裂縫於電容部分或者並無條紋狀的層，並且具有防水之良 好保護性質。 依據範例2及3所述之製造方法所獲得的組合薄膜電 容亦不具有可察覺的裂縫於電容部分或者並無條紋狀的層 ，並且具有防水之良好保護性質。 (範例5 ) 圖8顯示一 LCR過濾器之橫斷面，其具有絕緣基底1 、及多數電容、電感和電阻於其上的結構。薄膜電容6係 依據範例1至4中的製造方法所獲得。在有機電介質層 4a被形成之後，電感8被形成以一 10// m厚之電鍍的Cu 。電阻7被形成以一 10# m厚之濺射的TaN。在有機電介 質層4b被形成之後，每一薄膜電容6、電阻7及電感8 被提供以如範例1中所述之相同方式，其具有朝上延伸至 頂部表面之額外的電極。 經濟部智慧財產局員工消費合作社印製 圖8顯示薄膜電容6、電阻7及電感8。然而，已發 現到其具有多數零件之LCR過濾器可具有Q ( ltan5 )之 低損失特性於Q> 100@ 1 GHz之高頻區域中。 電感材料已被描述爲Cu，然而電感亦可爲任何具有 相對電介質常數<50# Ω .cm之材料，而尤其最好是Ag，1T ^ 91. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs-9- 594812 A7 _ B7 V. Description of the invention (7) The reaction product layer on the interface between the upper / lower electrode and the inorganic dielectric, so that The film capacitor of the target large capacitance. (Please read the precautions on the back before filling this page.) The passive electronic components built-in as mentioned above can provide additional terminals to provide a low-loss small LCR filter for chip-type devices. Furthermore, a high-frequency module (on which the chip-type device is mounted) may have a reduced package area (which can reduce the module) of one of the filter sections, and may have a reduced number of components (which may To achieve reduced costs). Brief Description of the Drawings Fig. 1 is a schematic diagram showing an example of a laminated structure of a thin film capacitor according to the present invention. FIG. 2 shows an example of a thin film capacitor according to the present invention. Fig. 3 is a schematic diagram showing another example of a laminated structure of a thin film capacitor according to the present invention. Fig. 4 is a schematic diagram showing another example of a laminated structure of a thin film capacitor according to the present invention. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs FIG. 5 shows a schematic diagram of an example of a lower electrode of a film capacitor according to the present invention. Fig. 6 is a schematic diagram showing another example of a laminated structure of a thin film capacitor according to the present invention. Fig. 7 is a schematic diagram showing an example of a laminated structure of a thin film capacitor according to the present invention. Fig. 8 is a schematic diagram showing an example of a laminated structure of an LCR filter according to the present invention. This paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) -10- 594812 A7 B7 V. Description of the invention (8) Figure 9 shows the laminated structure of the LCR filter of the wafer-type device according to the present invention. An example of a map. (Please read the precautions on the back before filling this page.) Figure 10 shows an example of a high-frequency module according to the present invention. Comparison table of main components 1 Insulating substrate 2 Lower electrode 2a Primary lower electrode 2b Secondary lower electrode 3 ίκ j \\\ Electromechanical dielectric layer 4 Organic dielectric layer 4a, 4b Organic dielectric layer 5 a Primary upper electrode 5b Secondary upper electrode 6 Thin film Capacitor 7 Resistor 8 Inductor 9 Wiring 10 External terminals 11 Chip-type device 12 Electronic wiring 13 High-frequency module Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Detailed description of the present invention This paper size applies to Chinese national standards ( CNS) A4 specification (210X297 mm) -11-594812 A7 _ B7 V. Description of the invention (9) The present invention will be described in more detail with reference to examples as follows. (Example 1) (Please read the precautions on the back before filling out this page) Figure 1 shows a schematic diagram of an example of a laminated structure of a film capacitor according to the present invention. In FIG. 1, a number 丨 represents an insulating substrate, 2 represents a lower electrode, 3 represents an inorganic dielectric layer, 4 represents an organic dielectric layer, 5a represents a main upper electrode, and 5b represents a secondary upper electrode. Referring to Figures 1 and 2, the structure of the lower electrode 2 is described: one end of the lower electrode 2 is provided with a contact hole which extends upward to be flush with the upper electrode 5 above the organic dielectric layer 4. Printed by the Consumer Property Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The method used to manufacture the thin film capacitors shown in Figure 1 is described below. The insulating substrate 1 is made of a 0.5 mm thick boroaluminosilicate glass substrate. This glass has a heat distortion temperature of 650 ° C. The lower electrode 2 is formed as follows. First, Cr / Cu was individually sputtered on a substrate having a thickness of 50 nm / l // m. Then, resist coating, etching, and resist removal are performed, and thus Cr / Cu is formed. A 10 // m-thick Cu is then deposited by a Cu plating method, and a 50nm Cr is deposited thereon to form a cover, so a molded lower electrode 2 is manufactured. A 10 // m-thick Cu is then deposited by a Cu plating method, and 50 nm of Cr is deposited thereon as a cover, and a molded lower electrode 2 is manufactured. TaOx without electromechanical dielectric layer 3 was then sputtered on a 0.5 // m thick unheated substrate. Then, uranium resist coating, etching, and uranium resist removal are performed, and thus TaOx is formed to form the inorganic dielectric layer 3. The size of this paper is applicable. National National Standard (CNS) A4 specification (210X297 mm) -12- 594812 A7 B7 V. Description of the invention (10) (Please read the precautions on the back before filling this page) Organic Dielectric Layer 4 It is then formed as follows. The organic dielectric layer 4 is composed of a polyimide-based arsenic PIQ with a low thermal diffusion coefficient (5x 1 (T6 / ° C) type). This resin The layer is formed as follows. First, a PIQ solution in a solvent of N-methyl-2 -raliodone (N-mety 1-2-py η. Ο 1 id ο ne) is spin-coated on a substrate. And then pre-baked at 110 ° C for 3 minutes, then exposed, developed (developer: tetramethylammonium hydride) and molded, and heat-hardened at 250 ° C. The organic dielectric layer 4 has a final thickness of 1 0 // m. Layer 4 is shaped to have space, which will be subsequently used to fill the contact hole of the lower electrode 2 and the contact hole of the main upper electrode 5a. The resist is then applied, while Cr / Cu / Cr (50nm / 10 // m / 50nm) is deposited in the same way as the lower electrode 2, in the contact hole of the lower electrode 2, the main upper electrode 5a and the secondary upper electrode 5b. Consumption by employees of the Intellectual Property Bureau of the Ministry of Economic Affairs Cooperative printed Figure 2 shows a perspective view of a thin film capacitor made as described above. The top layer has an electrode geometry with the main upper electrode 5a The secondary upper electrode 5b is connected, and a capacitor (such as C1) including the inorganic dielectric layer 3 and a capacitor (such as C2) including the organic dielectric layer 4 are connected in parallel to function as a single capacitor (such as C). The total capacitance 値 is C = Cl + C2. Among them, TaOx has a relative dielectric constant of 24, which is about 7 times that of the polyimide-based resin PIQ (3.5). TaOx has a thickness of 0.5 // m and polyisocyanate The amine-based resin PIQ has 10 // m. The formula for the capacitance = C = ε ι · χ ε 0 XA / d will result in C1 > C2, assuming that the two materials have the same A. C2 has 1/140 times lower than C1 Capacitance. Therefore, C2 can easily go through capacitance. It can be adjusted to not more than 1%. The paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 mm) -13- 594812 A7 B7 _ V. Description of the invention (11) In the small range, it is much smaller than that of C 1. Its adjustment can be performed by controlling the surface area of the secondary upper electrode 5b. The thin film capacitor manufactured as above does not have a noticeable crack in the capacitor portion or does not have Stripe-like layer, and has good protective properties against water. A film capacitor can be manufactured at a low temperature of more than 250 ° C, in which the capacitance 値 can be adjusted within a small range of not more than 1%. Therefore, an insulating substrate made of a small thermal deformation (at 250 ° C) material can be manufactured with Small film capacitor with good capacitance, large capacitance with adjustability. (Example 2) As shown in FIG. 3, a lower electrode 2 which is molded in the same manner as described in Example 1 is manufactured. Ta Ox without electromechanical dielectric layer 3 was then sputtered on a 0.5 A m unheated substrate. Then, uranium resist coating, etching and resist removal are performed, so TaOx is formed to form an inorganic dielectric layer 3. The non-electromechanical dielectric layer 3 is formed so as to extend to a region (to allow the secondary upper electrode 5 b to be projected downwardly on this region) so that the inorganic dielectric layer 3 may have a larger surface area than the secondary upper electrode 5 b. Next, the organic dielectric layer 4, the main upper electrode 5a, and the secondary upper electrode 5b are formed in the same manner as described in Example 1. The capacitor (such as ci) containing the inorganic dielectric layer 3 and the capacitor (such as C2) containing the electroless dielectric layer 3 and the organic dielectric layer 4 are connected in parallel to function as a single capacitor (such as C). The total capacitance obtained is based on the Chinese paper standard (CNS) A4 specification (210X297 mm) β .......- I-* —1 = I 1 II n I (Please read the note on the back first) Please fill in this page for the matters) Order printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs -14-594812 B7 V. Description of Invention (12) (Please read the notes on the back before filling this page) C = C1 + C2. C2 is derived from its series capacitance consisting of a capacitor (such as C2a) containing an inorganic dielectric layer 3 and a capacitor (such as C2b) containing an organic dielectric layer 4, so that i / C2 = 1 / C2a + 1 / C2b ° C2 is mainly determined by C2b including the organic dielectric layer 4, which has a lower dielectric constant than the organic dielectric. Therefore, C2 can easily go through a small capacitance, adjusted in the range of not more than 1%, which is much smaller than C1, as in the case of Example 1. Film capacitors made as described above do not have perceptible cracks in the capacitor portion or have no stripe-like layer, and have good protection properties against water. The thin film capacitor manufactured as described above also has an inorganic dielectric layer 3, which requires less stringent accuracy in the working size, which can improve the productivity of the product. (Example 3) Φ. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Figures 4 and 5 individually show a cross-section and a hologram of a thin film capacitor, in which the lower electrode 2 is divided into two secondary electrodes. Insulating substrate 1 is made of 0 · 5 mm thick boroaluminosilicate glass substrate. This glass has a heat distortion temperature of 650 ° C. The lower electrode 2 is formed as follows. First, Ci./Cu was individually sputtered on a substrate having a thickness of 50 nm / l // m. Then, resist application, etching, and resist removal are performed, and thus Cr / Cu is formed. The molded structure shown in Fig. 5 includes a primary lower electrode 2a and a secondary lower electrode 2b. A 1 0 // ill thick Cu is then adhered to Dianji with a Cu plating method, and 5Onm Cr is deposited thereon to become a cover, so a molded main lower electrode 2a is manufactured. Ta Oxide without electromechanical dielectric layer 3 was subsequently sputtered. The paper size is in accordance with Chinese National Standard (CNS) 8 4 specifications (210X297 mm) '-15-594812 A7 _____B7 V. Description of the invention (13) (Please read the note on the back first Please fill in this page again) on 0 · 5 // m thick unheated substrate. Then, resist coating, etching, and uranium resist removal are performed, so TaOX is formed to form an inorganic dielectric layer 3, which is deposited only on the main lower electrode 2a. Next, the organic dielectric layer 4 and the upper electrode 5 are formed in the same manner as described in Example 1. The film capacitor made as described above has a total capacitance 値, which is expressed as C = C 1 + C2, as in the case of Example 1. It has been found that forming the electrode into divided secondary electrodes in the pre-production stage can increase the productivity of the product. Film capacitors made as described above do not have appreciable cracks in the capacitor portion or have no stripe-like layer, and have good protection properties against water. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Figure 6 shows another example of a film capacitor manufactured according to the above method. The capacitor shown has an inorganic dielectric layer 3 formed above the primary lower electrode 2a and above the secondary lower electrode 2b. This capacitor has no noticeable cracks in the capacitor portion or no streak-like layer, and has good protection properties against water. The total capacitance 値 obtained is the same as that in Example 2, where C is composed of a capacitor including an inorganic dielectric layer 3 and a capacitor including an organic dielectric. (Example 4) FIG. 7 shows a schematic diagram of a combined film capacitor having an insulating substrate 1 and a plurality of capacitors thereon. The electrode, organic dielectric, inorganic dielectric material, and manufacturing method are the same as those described in Example 1. Figure 7 shows a set of three film capacitors, each of which is a small film capacitor of large capacitance. As for this and the standard, the Chinese national standard (0 ~ 5) and 8 specifications (210 mm and 297 mm) are applicable. -16- 594812 A7 __ B7 V. Description of the invention (14) (Please read the precautions on the back before (Fill in this page) In the case of each thin film capacitor, the combined thin film capacitor group does not have perceptible cracks in the capacitor portion or does not have a stripe-like layer, and has good protection properties against water. The combined thin film capacitors obtained according to the manufacturing methods described in Examples 2 and 3 also have no detectable cracks in the capacitor portion or no streak-like layer, and have good protection properties against water. (Example 5) FIG. 8 shows a cross section of an LCR filter, which has an insulating substrate 1 and a structure with most capacitors, inductors, and resistors thereon. The film capacitor 6 was obtained according to the manufacturing method in Examples 1 to 4. After the organic dielectric layer 4a is formed, the inductor 8 is formed with a 10 // m thick plated Cu. The resistor 7 was formed with a sputtered TaN with a thickness of 10 m. After the organic dielectric layer 4b is formed, each thin film capacitor 6, a resistor 7, and an inductor 8 are provided in the same manner as described in Example 1, which has an additional electrode extending upward to the top surface. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Figure 8 shows film capacitor 6, resistor 7, and inductor 8. However, it has been found that the LCR filter with most parts can have a low loss characteristic of Q (ltan5) in the high frequency region of Q > 100 @ 1 GHz. The inductive material has been described as Cu, however the inductor can also be any material with a relative dielectric constant < 50 # Ω .cm, and especially Ag is preferred,
Al，Ag-Pd 及 Pt。 電阻材料已被描述爲TaN，然而電阻亦可爲任何具有 從數Ω至數Μ Ω之廣大範圍電阻値的材料，而尤其最好是 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ 297公釐） -17- 594812 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明（15) Ni-Cr 及 Ni-P 0 (範例6 ) 圖9顯示一晶片型裝置之LCR過濾器的槪圖。一包 括多數薄膜電容6、電阻7及電感8之LCR過濾器係依據 範例5所述之方法而製造。接著形成有機電介質層4c及 佈線9，且進一步形成其作爲一保護層之有機電介質層4d 。最後，P b - S η焊接塊被使用以形成外界終端1 〇，因而完 成晶片型裝置11。 圖10顯示一高頻之模組13，其中晶片型裝置11被 安裝於電子佈線12之上。晶片型裝置11具有2mm X 1 m m X 0 · 8 m m之厚度（包含焊接塊厚度）。因此裝置11 可提供某一在其表面上安裝各電容及電感零件之裝置的 1/8倍表面積。裝置11亦具有一具備不小於3%之改良喪 失的LCR過濾器。以不大於250°C之低溫的製造方法可提 供高製造穩定度及高於95%之高生產率的晶片型裝置11 。晶片型裝置11被進一步小型化且具有良好的低雜訊性 能，其較不受電源供應雜訊之影響。高頻之模組1 3可藉 由安裝LCR過濾器之小型化晶片型裝置11而被小型化。 安裝程序可被完成於單一步驟中，其可實現增加生產率及 減低成本。 依據本發明，一包含有機電介質（其具有絕佳的延展 性 '可塑性及保護性質）之電容可具有一內建的電容（其 包含一具有高的相對電介質常數之無機電介質），此係透 (請先閲讀背面之注意事項再填寫本頁) -·1^ϋ· nn ϋ^ι —0. 訂 -^w! 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） -18- 594812 A7 B7 五、發明説明（16) 過不大於25CTC之低溫製造方法而執行，以致其一大電容 値的小型薄膜電容可被製造。多數薄膜電容、電阻及電感 可構成一 LCR過濾器，其可被用以提供一具高生產率之 小型化低雜訊晶片型裝置，及一供該晶片型裝置安裝於其 上之高頻的低價小型模組。. (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -19-Al, Ag-Pd and Pt. The resistance material has been described as TaN, however, the resistance can also be any material with a wide range of resistance 数 from several Ω to several Ω Ω, and it is particularly preferred that this paper size applies the Chinese National Standard (CNS) A4 specification (210 × 297) (Mm) -17- 594812 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of Invention (15) Ni-Cr and Ni-P 0 (Example 6) Figure 9 shows the LCR filter of a chip-type device.槪 Figure. An LCR filter including most film capacitors 6, resistors 7 and inductors 8 is manufactured according to the method described in Example 5. Next, an organic dielectric layer 4c and a wiring 9 are formed, and an organic dielectric layer 4d as a protective layer is further formed. Finally, the P b -S η pad is used to form the external terminal 10, thereby completing the wafer-type device 11. FIG. 10 shows a high-frequency module 13 in which a chip-type device 11 is mounted on an electronic wiring 12. The wafer-type device 11 has a thickness of 2 mm X 1 m m X 0 · 8 mm (including the thickness of the solder bumps). Therefore, the device 11 can provide 1/8 times the surface area of a device in which various capacitor and inductance components are mounted on its surface. The device 11 also has an LCR filter with an improved loss of not less than 3%. A manufacturing method at a low temperature of not higher than 250 ° C can provide a wafer-type device 11 with high manufacturing stability and high productivity higher than 95%. The chip-type device 11 is further miniaturized and has good low noise performance, which is less affected by power supply noise. The high-frequency module 13 can be miniaturized by a miniaturized wafer-type device 11 equipped with an LCR filter. The installation procedure can be completed in a single step, which can increase productivity and reduce costs. According to the present invention, a capacitor containing an organic dielectric (which has excellent ductility and plasticity and protection properties) may have a built-in capacitor (which includes an inorganic dielectric with a high relative dielectric constant), which is transparent ( Please read the notes on the back before filling in this page)-· 1 ^ ϋ · nn ϋ ^ ι —0. Order-^ w! This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)- 18- 594812 A7 B7 V. Description of the invention (16) It is performed at a low temperature manufacturing method of not more than 25CTC, so that its small film capacitor with a large capacitance can be manufactured. Most film capacitors, resistors and inductors can constitute an LCR filter, which can be used to provide a miniaturized, low noise chip-type device with high productivity, and a low-frequency, low-frequency device for mounting the chip-type device on it. Price small module. (Please read the precautions on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -19-