JP2002280261A - Thin-film capacitor, electronic membrane component and producing method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a miniaturized high-capacitance thin film capacitor, an electronic component with built-in passive element such as an LCR filter of low loss and a miniaturized low-cost module, in which the LCR filter is packaged, for coping with high frequency. SOLUTION: In the thin-film capacitor, the electronic membrane component and a production method therefor, a plurality of dielectric layers are formed on an insulated substrate, while holding both the sides of a dielectric layer in the direction of laminating between electrodes, and each of dielectric layers is composed of an inorganic dielectric layer and an organic dielectric layer.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film capacitor and a passive element built-in electronic component which can be used for various wireless communication devices such as a portable telephone or other various electronic devices, and a method of manufacturing the same.

[0002]

2. Description of the Related Art In recent years, there has been an increasing need for miniaturization and high performance of portable communication devices, and further miniaturization of capacitors has been demanded.

[0003] A conventional capacitor is formed in a laminated form having a thickness of 10 to 100 µm in which a plurality of electrode layers and an inorganic dielectric layer are laminated. However, an inorganic dielectric using a high dielectric constant material has a temperature required for crystallization, crystal grain growth, and sintering of 100.
Very high, around 0 ° C. For this reason, a withstand voltage cannot be obtained unless a film having a thickness of several tens μm or more is generally formed.

Japanese Unexamined Patent Application Publication No. 11-97287 discloses a crack-free flexible capacitor using an organic dielectric for thinning.

Further, as a conventional noise filter which is a passive element built-in electronic component, an LCR resonance circuit is formed by disposing a capacitor and an inductor as separate components on a module substrate and connecting these by wiring. Things are used. However, further reduction in the size of the LCR resonance circuit has been demanded due to the reduction in the weight and the number of parts of portable devices. Therefore, the development of the capacitor portion is proceeding in the direction of forming a thin film capacitor, mounting it inside a thin film multilayer substrate, and increasing the degree of integration. Bell Labs Technical
Journal July-Septmber P.1
16 (1998) discloses an example in which a capacitor, an inductor, and a resistor are formed in a multilayer substrate.

Japanese Patent Application Laid-Open No. 4-302117 discloses a thin film capacitor comprising a substrate, a lower electrode, a dielectric thin film, and an upper electrode, which is formed after forming a dielectric thin film and then forming a thin film capacitor having a thickness of 300-1000.
There is a disclosure of performing heat treatment in an oxidizing atmosphere at a temperature of ° C.

[0007]

As described above, in order to reduce the size and increase the capacitance of the capacitor, it is necessary to increase the area of the upper electrode of the dielectric layer, use a high dielectric material, and reduce the thickness of the dielectric. Required.

The capacitance C of the capacitor is expressed by the following equation: C = εr × ε0 × A / d (where, εr: relative permittivity of dielectric, ε0: permittivity of vacuum, A: area of upper electrode, d : The thickness of the dielectric).

However, by forming an organic dielectric having a thickness of 10 μm or less on an organic film or a resin substrate disclosed in Japanese Patent Application Laid-Open No. 11-97287, a capacitor having a thickness of 0.4 mm or less can be manufactured without cracking. Since the relative dielectric constant of the body is very small, 3 to 4, there is a problem that the capacity cannot be increased.

[0010] Also, Bell Labs. Techn.
ical Journal July-Septembe
The structure described in r. P. 116 (1998) has a problem in forming a high-capacity capacitor by miniaturization because it uses a dielectric material of Si3N4 having a relative dielectric constant of about 7. Furthermore, since Si having a low resistivity is used for the insulating substrate, it becomes a noise source in a high frequency region, and has a low loss LCR.
There was a problem that a filter could not be obtained.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a small-sized and high-capacity thin-film capacitor and an electronic component with a built-in passive element which is a low-loss LCR filter, and a small-sized and low-cost high-frequency module equipped with the LCR filter. I do.

[0012]

The gist of the invention is as follows. [1] A thin-film capacitor in which a plurality of dielectric layers having both sides in the stacking direction of a dielectric film sandwiched between electrodes are formed on an insulating substrate, wherein the dielectric layers are an inorganic dielectric layer and an organic dielectric layer. This is a thin film capacitor composed of: [2] A thin-film capacitor in which a plurality of dielectric layers having both sides in the stacking direction of a dielectric film sandwiched between electrodes are set on an insulating substrate, and a main upper electrode is formed on an upper surface of the inorganic dielectric layer,
This is a thin film capacitor in which sub upper electrodes are formed in parallel on the upper surface of an organic dielectric layer. [3] A thin-film capacitor in which a plurality of dielectric layers sandwiching both sides of a dielectric film in a stacking direction between electrodes are set on an insulating substrate, and a main upper electrode is formed on an upper surface of the inorganic dielectric layer,
This is a thin film capacitor in which a sub-upper electrode is formed in parallel on the upper surface of a laminated dielectric layer of an inorganic dielectric layer and an organic dielectric layer. [4] A thin film capacitor in which dielectric layers sandwiching electrodes on both sides in the direction of lamination of a dielectric film on an insulating substrate are set in a plurality of layers, and the main lower electrode and the sub lower electrode are arranged in parallel on the insulating substrate. A thin film capacitor in which an inorganic dielectric layer is formed on an upper surface of the main lower electrode and an organic dielectric layer is formed on an upper surface of the sub lower electrode. [5] A thin-film capacitor in which a dielectric layer sandwiching electrodes on both sides in the direction of lamination of a dielectric film is formed on an insulating substrate in a plurality of layers, and a main lower electrode and a sub-lower electrode are arranged in parallel on the insulating substrate. A thin film capacitor in which an inorganic dielectric layer is formed on the upper surface of the main lower electrode, and a laminated dielectric layer of an inorganic dielectric layer and an organic dielectric layer is formed on the upper surface of the sub lower electrode. A main upper electrode is formed on the upper surface of the inorganic dielectric layer,
This is achieved by forming sub-upper electrodes in parallel on the upper surface of the laminated dielectric layer of the inorganic dielectric layer and the organic dielectric layer. In this case, since the inorganic dielectric layer can be formed wide in the projection direction of the sub upper electrode, there is an effect that a processing size can be made large.

Another aspect of the present invention is a thin-film capacitor in which a plurality of dielectric layers are provided on both sides of an insulating substrate in the direction of lamination of a dielectric film and sandwiched between electrodes. This is achieved by forming a lower electrode and a sub lower electrode in parallel, forming an inorganic dielectric layer on the upper surface of the main lower electrode, and forming an organic dielectric layer on the upper surface of the sub lower electrode. According to this embodiment, since the processing size of the upper electrode of the uppermost layer can be increased, it has a feature of excellent processing controllability.

Further, a thin-film capacitor comprising a plurality of dielectric layers sandwiched between electrodes on both sides of a dielectric film in the direction of lamination on an insulating substrate, wherein a main lower electrode and a sub-lower electrode are provided on the insulating substrate. Are preferably formed in parallel, an inorganic dielectric layer is formed on the upper surface of the main lower electrode, and a laminated dielectric layer of an inorganic dielectric layer and an organic dielectric layer is formed on the upper surface of the sub lower electrode. .

Although the case where the lower electrode is formed as a first layer on an insulating substrate has been described, the present invention is not limited to this and the lower electrode is formed after forming an organic dielectric layer or an inorganic dielectric layer on the insulating substrate. May be configured.

Further, as long as an electrode can be formed on the uppermost surface in the laminating direction from a part of the lower electrode, the entire other surface may be covered with an inorganic dielectric layer.

As an insulating substrate, steatite (M
gO-SiO ₂ ), forsterite (MgO-Si)
O ₂ ), alumina, magnesia, SiO ₂ , Si, glass, glass epoxy, an organic film, and a resin substrate can also be used.

The organic dielectric has a working temperature of 180.
A material having excellent heat resistance of not less than ° C. is preferable. In particular, polyimide, polybismaleide, polyesterimide, polyamideimide, benzocyclobutene, or a porous material thereof may be used.

Further, the inorganic dielectric is preferably made of a material several times larger than the relative dielectric constant of the organic dielectric, particularly TaO.
x, TiOx, SrTiO3, CaTiO3, MgTi
O3, BaTiO3, (Ba, Sr) TiO3, PbT
iO3, Pb (Zr, Ti) O3, (Pb, La) (Z
r, Ti) O3, Pb (Mg, Nb) O3 or a combination thereof may be used.

For the upper and lower electrodes, Ag, Au,
Pt, Ag-Pd, or Al may be used. In order to increase the adhesive force between the lower electrode and the insulating substrate, Cr, Ti, M
o, TiN, Ti / W, Ta, TaN, etc. may be interposed. Another feature of the present invention to achieve the above object is achieved by providing a plurality of the above thin film capacitors, inductors, and resistors on an insulating substrate.

Although an Si substrate may be used as the insulating substrate, a glass substrate capable of lowering loss in a high frequency band may be used. According to this feature, low resistivity Si
Although the production of low-loss thin-film capacitors and inductors is difficult because the substrate acts as a component of conductor loss, low-loss thin-film capacitors and inductors can be provided by using high-resistance glass for the insulating substrate.

Another feature of the present invention that achieves the above object is that
By configuring the small-sized and high-capacity thin-film capacitor, the inductor and the resistor on the same insulating substrate, a small-sized and low-loss LCR filter of an electronic component with a built-in passive element can be manufactured.

Further, by manufacturing the above-described thin film capacitor and the electronic component with a built-in passive element at a temperature of 250 ° C. or less, a small-sized high-capacity thin film capacitor can be stably manufactured. A conventional capacitor made of an inorganic dielectric has a very high heat treatment temperature of 1000 ° C., so that it is easy to form a reaction layer having a low dielectric constant at the interface between the upper and lower electrodes and the inorganic dielectric. For this reason, there was a problem that the intended capacity was reduced. According to a feature of the present invention,
Since it is manufactured at the following low temperature, formation of a reaction layer at the interface between the upper electrode and the lower electrode and the dielectric can be suppressed, and a desired high-capacity thin film capacitor can be manufactured.

If external terminals are provided on the above-described electronic component with a built-in passive element, a chip type element of a small and low-loss LCR filter can be manufactured.
The high-frequency compatible module on which the chip-type element is mounted can reduce the mounting area of the filter unit and reduce the size, and can reduce the cost by reducing the number of components.

Hereinafter, the present invention will be described in detail with reference to examples.

Embodiment 1 FIG. 1 schematically shows an example of a layer structure of a thin film capacitor of the present invention. In FIG. 1, 1
Denotes an insulating substrate, 2 denotes a lower electrode, 3 denotes an inorganic dielectric layer, 4 denotes an organic dielectric layer, 5a denotes a main upper electrode, and 5b denotes a sub upper electrode.

The structure of the two lower electrodes will be described with reference to FIGS. 1 and 2. A contact hole is drawn from one end of the lower electrode 2 to the same plane as the upper electrode 5 on the organic dielectric layer 4.

Next, a typical method of manufacturing the thin film capacitor shown in FIG. 1 will be described. As the insulating substrate 1, an aluminoborosilicate glass substrate having a thickness of 0.5 mm was used. The strain point is 650 ° C. The lower electrode 2 is first made of Cr /
After Cu was formed at a thickness of 50 nm / 1 μm by sputtering, resist formation, etching, and resist peeling were performed in this order, and patterning was performed. Next, by forming Cu with a thickness of 10 μm by Cu plating and then forming a protective film of Cr with a thickness of 50 nm, the patterned lower electrode 2 is formed.
Was prepared.

Next, a 10 μm thick C
The patterned lower electrode 2 was formed by forming a protective film of 50 nm of Cr after forming u. Next, TaOx was formed as the inorganic dielectric layer 3 by a sputtering method to a thickness of 0.5 μm without heating the substrate. Then, processing was performed in the order of resist formation, etching, and resist stripping, and patterning was performed, thereby forming an inorganic dielectric layer 3.

Next, an organic dielectric layer 4 was formed. The organic dielectric layer 4 is made of polyimide resin PIQ (polyimide iso-
low thermal expansion coefficient of indoloquinazolinedione (5 × 10 ^-6 /
° C) type. This resin layer is made of N-methyl-
A PIQ solution using 2-pyrrolidone as a solvent is applied by spin coating, prebaked at 110 ° C. for 3 minutes, and then exposed,
After patterning by development (developer: tetramethylammonium hydride), it was formed by heat curing at 250 ° C. The thickness of the organic dielectric layer 4 is finally 10 μm.
m. At this time, a space for filling the contact hole of the lower electrode 2 and the contact hole of the main upper electrode 5a later was provided by patterning.

Next, after forming a resist, the lower electrode 2
Cr / Cu / Cr (50 nm / 10
(μm / 50 nm), a contact hole for the lower electrode 2, a main upper electrode 5a, and a sub upper electrode 5b.

FIG. 2 shows an external view of the thin film capacitor manufactured by the above method. The electrode configuration of the uppermost layer is the upper electrode 5a
And the sub upper electrode 5b are connected to each other, and a capacitor made of the inorganic dielectric material 3 (hereinafter C1) and a capacitor made of the organic dielectric material 4 (this is C2) are connected in parallel,
It functions as one capacitor (referred to as C).

The combined capacitance is C = C1 + C2.
In this case, the relative dielectric constant of TaOx is 24, which is about 7 times larger than 3.5 of the polyimide resin PIQ. The film thickness of both is 0.5 μm for TaOx and 10 μm for polyimide resin PIQ. The capacitance is C = εr × ε0 ×
From the expression of A / d, if A is the same, C1> C
2 is obtained. Since C2 has a small capacity of 1/140 of C1, the capacitance can be easily adjusted in a minute range of 1% or less as compared with C2, and can be adjusted by controlling the area of the upper electrode 5b.

The thin film capacitor manufactured by the above method is
No cracking or film peeling of the capacitor part was observed, and the protection resistance to water was excellent.

The above results show that a thin film capacitor capable of adjusting the capacitance in a minute range of 1% or less at a low temperature of at least 250 ° C. can be manufactured.

Thus, as long as the insulating substrate is made of a material having a small thermal strain at a temperature of 250 ° C., a thin film capacitor having high capacity, miniaturization, and capacity adjustment can be manufactured.

(Example 2) Next, as shown in FIG. 3, after forming two lower electrodes patterned by the same method as in the first embodiment, TaOx was used as the inorganic dielectric layer 3 by sputtering. It was formed in a thickness of 0.5 μm without heating. Then, processing and patterning were performed in the order of resist formation, etching, and resist stripping, thereby producing an inorganic dielectric layer 13 having an area equal to or larger than the sub-upper 5b area in the projection direction of the sub-upper 5b area. Next, the organic dielectric layer 14, the main upper electrode 5a, and the sub upper electrode 5b were manufactured in the same manner as in the first embodiment.

A capacitor made of an inorganic dielectric 3 (this is C1) and a capacitor made of an inorganic dielectric 3 and an organic dielectric 4 (C2) are connected in parallel, and one capacitor (C and C2) is connected. Function). The combined capacitance is C = C1 + C2. C2 is an inorganic dielectric 3
/ C2 = 1 / C2a + 1 / C2b because of the series connection of the capacitor made of (C2a) and the capacitor made of the organic dielectric material 4 (C2b). Since C2 is rate-determined by C2b made of the organic dielectric material 4 having a low dielectric constant, as compared with the first embodiment, C2 is 1% lower than C1.
% Can be finely adjusted.

The thin film capacitor produced by the above method is
No cracking or film peeling of the capacitor part was observed, and the protection resistance to water was excellent.

Further, the thin film capacitor manufactured by the above method has an effect on improvement of the product yield and the like because the processing accuracy of the inorganic dielectric 3 is gradual.

(Embodiment 3) FIGS. 4 and 5 show a sectional view and a schematic view of a thin film capacitor in which the lower electrode 2 is separated into two parts. As the insulating substrate 1, an aluminoborosilicate glass substrate having a thickness of 0.5 mm was used. The strain point is 650 ° C. First, the lower electrode 2 was formed by forming 50 nm / 1 μm of Cr / Cu by sputtering, and then processed by resist forming, etching, and resist peeling in this order, and was patterned. As shown in FIG. 5, the patterning structure includes a main lower electrode 2a and a sub lower electrode 2b. Next, after forming a thickness of 10 μm by Cu plating,
A main lower electrode 2a and a sub-lower electrode 2b were patterned by using a protective film of 50 nm for r. Next, TaOx was formed as the inorganic dielectric layer 3 to a thickness of 0.5 μm by sputtering without heating the substrate. Then, processing and patterning were performed in the order of resist formation, etching, and resist peeling, and the inorganic dielectric layer 3 was formed only on the main lower electrode 2a.
Next, the organic dielectric layer 4 and the upper electrode 5 were manufactured in the same manner as in the first embodiment.

The thin film capacitor manufactured by the above method has a combined capacitance represented by C = C1 + C2 as in the first embodiment.

Since the separation and patterning of the electrodes is performed in the initial manufacturing process, it has been found that the product yield can be greatly improved. In addition, the thin film capacitor did not crack or peel off the capacitor portion, and was excellent in protection resistance to water.

As shown in FIG. 6, in the above-described manufacturing method, the thin film capacitor in which the inorganic dielectric 3 is formed not only on the main lower electrode 2a but also on the sub lower electrode 2b can be broken or peeled at the capacitor portion. No protection was observed, and the water resistance was excellent. The combined capacitance was the same as in Example 2, and 3
It is composed of a capacitor made of an inorganic dielectric layer and a capacitor made of an organic dielectric layer 4.

Embodiment 4 FIG. 7 schematically shows a composite thin film capacitor having a structure in which a plurality of capacitors are provided on one insulating substrate. The electrodes, organic dielectric, inorganic dielectric material, and manufacturing method are the same as those in the first embodiment. FIG. 7 shows an aggregate of three thin-film capacitors, which is a miniaturized high-capacity thin-film capacitor. As in the case of the individual thin film capacitors, no cracks or film peeling were observed in the capacitor portion in the composite assembly, and the protection resistance to water was excellent.

Also, the composite thin film capacitors produced by the methods of Examples 2 and 3 did not show any cracking or peeling of the capacitor portion, and also had excellent protection resistance to water.

Embodiment 5 FIG. 8 shows a cross-sectional structure of an LCR filter having a structure in which a plurality of capacitors, a plurality of inductors, and a plurality of resistors are provided on a substrate. The thin film capacitor 6 was formed by using the method of Examples 1 to 4.
Incidentally, after the formation of the organic dielectric layer 4a, the inductor 8 was made of Cu having a thickness of 10 μm formed by plating. The resistor 7 was formed by sputtering TaN having a thickness of 10 μm. Next, after forming the organic dielectric layer 4b, the electrodes of the thin film capacitor 6, the resistor 7, and the inductor 8 were pulled out to the uppermost layer in the same manner as in Example 1.

FIG. 8 shows a single thin film capacitor 6, a resistor 7, and an inductor 8, but a plurality of thin film capacitors 6,
When the high frequency characteristics of the Q (1 / tan δ) value of the R filter were examined, it showed a low loss characteristic of Q> 100 ＠ 1 GHz.

Although the case where the material of the resistor is Cu has been described, a material having a specific resistance of <50 μΩ · cm may be used, and Ag, Al, Ag-Pd, and Pt are particularly preferable.

Although TaN has been described as the material of the resistor, any material having a resistance value in a wide range from several Ω to several MΩ may be used, and Ni—Cr and Ni—P are particularly preferable.

(Embodiment 6) FIG. 9 is a schematic view of a chip type element of an LCR filter. LC composed of a plurality of thin film capacitors 6, resistors 7, and inductors 8 manufactured in Example 5.
After fabricating the R filter, subsequently, the organic dielectric layer 4c and the wiring 9 were formed, and further, a protective layer of the organic dielectric layer 4d was formed. Finally, the external terminals 10 were formed as bumps using Pb-Sn solder, and the chip-type element 11 was manufactured.

FIG. 10 shows that the 11-chip type element has the electrode wiring 12.
The high frequency module 13 mounted thereon is shown. The chip type element 11 is 2 × 1 × 0.8 mm thick (excluding bump thickness)
The area can be reduced to about 1/8 of the case where capacitors and inductors are surface-mounted as separate components. The loss as an LCR filter was improved by 3% or more. In addition, the production stability is high due to the low temperature manufacturing process of 250 ° C.
No. 1 was produced with a yield exceeding 95%. In addition, the size can be reduced, and the performance thereof is low and favorable, which is hardly affected by power supply noise. The high-frequency module 13 is a small chip type device 11 which is an LCR.
As a result of mounting the filter, it was possible to reduce the size and to perform mounting only once, thereby increasing the throughput and reducing the cost.

[0053]

According to the present invention, it is possible to incorporate a capacitor made of an inorganic dielectric having a high relative dielectric constant into a capacitor made of an organic dielectric excellent in ductility, malleability and protection resistance at a temperature of 250 ° C. Because of the low-temperature fabrication process, it is possible to fabricate high-capacity, miniaturized thin-film capacitors. Further, by using an LCR filter including a plurality of the thin film capacitors, a resistor, and an inductor, it is possible to provide a high-yield, small-size, low-noise chip-type element and a small-size, low-cost, high-frequency-compatible module equipped with the chip. .

[Brief description of the drawings]

FIG. 1 is a schematic diagram showing an example of a layer configuration of a thin film capacitor of the present invention.

FIG. 2 is a schematic view of a thin film capacitor of the present invention.

FIG. 3 is a schematic diagram showing an example of a layer configuration of the thin film capacitor of the present invention.

FIG. 4 is a schematic diagram showing an example of a layer configuration of the thin film capacitor of the present invention.

FIG. 5 is a schematic diagram of a lower electrode of the present invention.

FIG. 6 is a schematic diagram showing an example of a layer configuration of the thin film capacitor of the present invention.

FIG. 7 is a schematic diagram showing an example of a layer configuration of the composite thin film capacitor of the present invention.

FIG. 8 is a schematic diagram illustrating an example of a layer configuration of the LCR filter of the present invention.

FIG. 9 is a schematic diagram showing an example of a chip-type element as an LCR filter of the present invention.

FIG. 10 is a schematic diagram showing a high-frequency module according to the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Insulating substrate, 2 ... Lower electrode, 2a ... Main lower electrode, 2b
... sub lower electrode, 3 ... inorganic dielectric layer, 4, 4a, 4b, 4
c, 4d: organic dielectric layer, 5: upper electrode, 5a: main upper electrode, 5b: sub upper electrode, 6: thin film capacitor, 7: resistor, 8: inductor, 9: wiring, 10: external terminal, 11
... chip type element, 12 ... electrode wiring, 13 ... high frequency compatible module.

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Naruhisa Motowaki 7-1-1, Omika-cho, Hitachi City, Ibaraki Prefecture Within Hitachi Research Laboratory, Hitachi, Ltd. (72) Inventor Seiji Watahiki Omika-cho, Hitachi City, Ibaraki Prefecture 7-1-1, Hitachi, Ltd., Hitachi Research Laboratory, Hitachi, Ltd. (72) Inventor Toshiya Sato 7-1-1, Omika-cho, Hitachi, Ibaraki Pref. Hitachi, Ltd. Semiconductor Group, Inc. 5-2-1, Kamizuhoncho, Kodaira City (72) Inventor Eiji Fukumoto 7-1-1, Omika-cho, Hitachi City, Ibaraki Prefecture Hitachi, Ltd. Hitachi Research Laboratory (72) Invention Person Yoko Furukawa 7-1-1, Omika-cho, Hitachi City, Ibaraki Prefecture F-term in Hitachi Research Laboratory, Hitachi, Ltd. F-term (reference) 5E082 AB03 CC03 CC13 DD02 DD07 EE23 EE37 FF05 FG03 FG42 LL15

Claims (12)

[Claims] 1. A thin film capacitor comprising: a plurality of dielectric layers having both sides in the stacking direction of a dielectric film sandwiched between electrodes formed on an insulating substrate, wherein the dielectric layers are composed of an inorganic dielectric layer and an organic dielectric layer. A thin-film capacitor comprising a body layer. 2. A thin film capacitor in which a plurality of dielectric layers having both sides in the stacking direction of a dielectric film sandwiched between electrodes are set on an insulating substrate, wherein a main upper electrode is formed on an upper surface of the inorganic dielectric layer. And a sub-upper electrode formed in parallel on the upper surface of the organic dielectric layer. 3. A thin-film capacitor in which a plurality of dielectric layers having both surfaces in a stacking direction of a dielectric film sandwiched between electrodes are set on an insulating substrate, and a main upper electrode is formed on an upper surface of the inorganic dielectric layer. And a sub-upper electrode formed in parallel on an upper surface of a laminated dielectric layer of an inorganic dielectric layer and an organic dielectric layer. 4. A thin film capacitor comprising a plurality of dielectric layers sandwiched between electrodes on both sides of a dielectric film in a laminating direction on an insulating substrate, wherein a main lower electrode and a sub lower electrode are provided on the insulating substrate. Are formed in parallel, an inorganic dielectric layer is formed on the upper surface of the main lower electrode, and an organic dielectric layer is formed on the upper surface of the sub lower electrode. 5. A thin-film capacitor comprising a plurality of dielectric layers sandwiched between electrodes on both sides of a dielectric film in a laminating direction on an insulating substrate, wherein a main lower electrode and a sub-lower electrode are provided on the insulating substrate. Are formed in parallel, an inorganic dielectric layer is formed on the upper surface of the main lower electrode, and a laminated dielectric layer of an inorganic dielectric layer and an organic dielectric layer is formed on the upper surface of the sub lower electrode. Characteristic thin film capacitor. 6. A thin film capacitor according to claim 1, wherein said insulating substrate is glass. 7. A thin film capacitor according to claim 1, wherein said dielectric film is an organic insulating film. 8. An electronic component with a built-in passive element, comprising a plurality of thin-film capacitors, inductors and resistors according to claim 1 mounted on an insulating substrate. 9. An electronic component with a built-in passive element, wherein the insulating substrate according to claim 8 is glass. 10. A method for manufacturing a thin film capacitor and a passive element built-in electronic component, wherein the thin film capacitor and the passive element built-in electronic part according to claim 1 are manufactured at a temperature of 250 ° C. or less. 11. A high-frequency compatible module, comprising: a chip-type element having an external terminal on the electronic component with a built-in passive element according to claim 8; 12. The sub-electrode according to claim 1, wherein a main lower electrode and a sub-lower electrode are formed in parallel on an insulating substrate, and the dielectric layer formed on the upper surface of the main lower electrode comprises A thin film capacitor having a higher dielectric constant than a dielectric layer formed on an upper surface of a lower electrode.