WO2002059902A1 - Procede de production d'un dispositif a semi-conducteur et dispositif a semi-conducteur ainsi obtenu - Google Patents

Procede de production d'un dispositif a semi-conducteur et dispositif a semi-conducteur ainsi obtenu Download PDF

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Publication number
WO2002059902A1
WO2002059902A1 PCT/JP2001/009245 JP0109245W WO02059902A1 WO 2002059902 A1 WO2002059902 A1 WO 2002059902A1 JP 0109245 W JP0109245 W JP 0109245W WO 02059902 A1 WO02059902 A1 WO 02059902A1
Authority
WO
WIPO (PCT)
Prior art keywords
circuit
memory
semiconductor device
test
fuse
Prior art date
Application number
PCT/JP2001/009245
Other languages
English (en)
Japanese (ja)
Inventor
Hideki Hayashi
Keiichi Higeta
Shigeru Nakahara
Takashi Koba
Naomi Ohshima
Original Assignee
Hitachi, Ltd.
Hitachi Ulsi Systems Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi, Ltd., Hitachi Ulsi Systems Co., Ltd. filed Critical Hitachi, Ltd.
Priority to JP2002560140A priority Critical patent/JPWO2002059902A1/ja
Publication of WO2002059902A1 publication Critical patent/WO2002059902A1/fr

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54473—Marks applied to semiconductor devices or parts for use after dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

Procédé de production d'un dispositif à semi-conducteur doté d'une unité mémoire possédant des cellules de mémoire et une unité logique. Ledit procédé consiste premièrement à tester l'unité mémoire, deuxièmement à mettre en mémoire les informations concernant un défaut, le cas échéant, des cellules de mémoire dans un registre, troisièmement à tester l'unité logique tandis que les informations concernant un défaut se trouvent en mémoire dans le registre et quatrièmement, après les trois premières étapes, à créer un circuit fusible pour conserver les informations de défaut en fonction des informations de défaut se trouvant en mémoire dans le registre.
PCT/JP2001/009245 2001-01-25 2001-10-22 Procede de production d'un dispositif a semi-conducteur et dispositif a semi-conducteur ainsi obtenu WO2002059902A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002560140A JPWO2002059902A1 (ja) 2001-01-25 2001-10-22 半導体装置の製造方法と半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001-017253 2001-01-25
JP2001017253 2001-01-25

Publications (1)

Publication Number Publication Date
WO2002059902A1 true WO2002059902A1 (fr) 2002-08-01

Family

ID=18883488

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2001/009245 WO2002059902A1 (fr) 2001-01-25 2001-10-22 Procede de production d'un dispositif a semi-conducteur et dispositif a semi-conducteur ainsi obtenu

Country Status (3)

Country Link
JP (1) JPWO2002059902A1 (fr)
TW (1) TW541539B (fr)
WO (1) WO2002059902A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009048669A (ja) * 2007-08-13 2009-03-05 Toshiba Corp 半導体記憶装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000260198A (ja) * 1999-03-11 2000-09-22 Toshiba Corp 半導体メモリ装置及び半導体メモリ装置搭載システム
JP2001035187A (ja) * 1999-07-21 2001-02-09 Hitachi Ltd 半導体装置およびその冗長救済方法
JP2001266589A (ja) * 2000-03-21 2001-09-28 Toshiba Corp 半導体記憶装置およびそのテスト方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000260198A (ja) * 1999-03-11 2000-09-22 Toshiba Corp 半導体メモリ装置及び半導体メモリ装置搭載システム
JP2001035187A (ja) * 1999-07-21 2001-02-09 Hitachi Ltd 半導体装置およびその冗長救済方法
JP2001266589A (ja) * 2000-03-21 2001-09-28 Toshiba Corp 半導体記憶装置およびそのテスト方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009048669A (ja) * 2007-08-13 2009-03-05 Toshiba Corp 半導体記憶装置

Also Published As

Publication number Publication date
JPWO2002059902A1 (ja) 2004-05-27
TW541539B (en) 2003-07-11

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