WO2002052626A3 - Verfahren zur herstellung eines mikroelektronischen bauelements und danach hergestelltes bauelement - Google Patents
Verfahren zur herstellung eines mikroelektronischen bauelements und danach hergestelltes bauelement Download PDFInfo
- Publication number
- WO2002052626A3 WO2002052626A3 PCT/EP2001/014955 EP0114955W WO02052626A3 WO 2002052626 A3 WO2002052626 A3 WO 2002052626A3 EP 0114955 W EP0114955 W EP 0114955W WO 02052626 A3 WO02052626 A3 WO 02052626A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- component
- producing
- produced according
- semiconductor material
- microelectronic
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000004377 microelectronic Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 abstract 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- -1 GaAs compound Chemical class 0.000 abstract 1
- 230000007774 longterm Effects 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/0502—Disposition
- H01L2224/05026—Disposition the internal layer being disposed in a recess of the surface
- H01L2224/05027—Disposition the internal layer being disposed in a recess of the surface the internal layer extending out of an opening
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05075—Plural internal layers
- H01L2224/0508—Plural internal layers being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05571—Disposition the external layer being disposed in a recess of the surface
- H01L2224/05572—Disposition the external layer being disposed in a recess of the surface the external layer extending out of an opening
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP01988040A EP1346403A2 (de) | 2000-12-22 | 2001-12-18 | Verfahren zur herstellung eines mikroelektronischen bauelements und danach hergestelltes bauelement |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10064479.1 | 2000-12-22 | ||
DE10064479A DE10064479A1 (de) | 2000-12-22 | 2000-12-22 | Verfahren zur Herstellung eines mikroelektronischen Bauelements |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002052626A2 WO2002052626A2 (de) | 2002-07-04 |
WO2002052626A3 true WO2002052626A3 (de) | 2003-02-13 |
Family
ID=7668595
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2001/014955 WO2002052626A2 (de) | 2000-12-22 | 2001-12-18 | Verfahren zur herstellung eines mikroelektronischen bauelements und danach hergestelltes bauelement |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1346403A2 (de) |
CN (1) | CN1222984C (de) |
DE (1) | DE10064479A1 (de) |
TW (1) | TW550715B (de) |
WO (1) | WO2002052626A2 (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106553992B (zh) * | 2015-09-25 | 2018-06-29 | 中芯国际集成电路制造(上海)有限公司 | 金属电极结构的制造方法 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57183071A (en) * | 1981-05-06 | 1982-11-11 | Nec Corp | Formation of recess type fine multi-layer gate electrode |
JPS60123026A (ja) * | 1983-12-08 | 1985-07-01 | Toshiba Corp | 半導体装置の製造方法 |
JPS6298768A (ja) * | 1985-10-25 | 1987-05-08 | Nec Corp | 半導体素子用電極 |
US4673593A (en) * | 1984-03-07 | 1987-06-16 | Sumitomo Electric Industries Ltd. | Process for forming an ohmic electrode on a p-type III-V compound semiconductor |
WO1989004057A1 (en) * | 1987-10-20 | 1989-05-05 | Bell Communications Research, Inc. | Epitaxial intermetallic contact for compound semiconductors |
EP0402061A2 (de) * | 1989-06-05 | 1990-12-12 | Motorola, Inc. | Metallisierungsprozess |
US4994892A (en) * | 1986-10-09 | 1991-02-19 | Mcdonnell Douglas Corporation | Aluminum germanium ohmic contacts to gallium arsenide |
US5770489A (en) * | 1994-05-18 | 1998-06-23 | Nec Corporation | Method of making a compound semiconductor field-effect transistor |
US5777389A (en) * | 1995-07-27 | 1998-07-07 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device including ohmic contact to-n-type GaAs |
US5849630A (en) * | 1989-03-29 | 1998-12-15 | Vitesse Semiconductor Corporation | Process for forming ohmic contact for III-V semiconductor devices |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2543518A1 (de) * | 1975-09-30 | 1977-04-07 | Licentia Gmbh | Halbleiterbauelement mit einem mehrschichtigen ohmschen anschlusskontakt |
FR2697945B1 (fr) * | 1992-11-06 | 1995-01-06 | Thomson Csf | Procédé de gravure d'une hétérostructure de matériaux du groupe III-V. |
-
2000
- 2000-12-22 DE DE10064479A patent/DE10064479A1/de not_active Withdrawn
-
2001
- 2001-12-18 EP EP01988040A patent/EP1346403A2/de not_active Withdrawn
- 2001-12-18 CN CNB018208916A patent/CN1222984C/zh not_active Expired - Fee Related
- 2001-12-18 WO PCT/EP2001/014955 patent/WO2002052626A2/de not_active Application Discontinuation
- 2001-12-20 TW TW090131716A patent/TW550715B/zh not_active IP Right Cessation
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57183071A (en) * | 1981-05-06 | 1982-11-11 | Nec Corp | Formation of recess type fine multi-layer gate electrode |
JPS60123026A (ja) * | 1983-12-08 | 1985-07-01 | Toshiba Corp | 半導体装置の製造方法 |
US4673593A (en) * | 1984-03-07 | 1987-06-16 | Sumitomo Electric Industries Ltd. | Process for forming an ohmic electrode on a p-type III-V compound semiconductor |
JPS6298768A (ja) * | 1985-10-25 | 1987-05-08 | Nec Corp | 半導体素子用電極 |
US4994892A (en) * | 1986-10-09 | 1991-02-19 | Mcdonnell Douglas Corporation | Aluminum germanium ohmic contacts to gallium arsenide |
WO1989004057A1 (en) * | 1987-10-20 | 1989-05-05 | Bell Communications Research, Inc. | Epitaxial intermetallic contact for compound semiconductors |
US5849630A (en) * | 1989-03-29 | 1998-12-15 | Vitesse Semiconductor Corporation | Process for forming ohmic contact for III-V semiconductor devices |
EP0402061A2 (de) * | 1989-06-05 | 1990-12-12 | Motorola, Inc. | Metallisierungsprozess |
US5770489A (en) * | 1994-05-18 | 1998-06-23 | Nec Corporation | Method of making a compound semiconductor field-effect transistor |
US5777389A (en) * | 1995-07-27 | 1998-07-07 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device including ohmic contact to-n-type GaAs |
Non-Patent Citations (4)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 007, no. 027 (E - 156) 3 February 1983 (1983-02-03) * |
PATENT ABSTRACTS OF JAPAN vol. 009, no. 280 (E - 356) 8 November 1985 (1985-11-08) * |
PATENT ABSTRACTS OF JAPAN vol. 011, no. 306 (E - 546) 6 October 1987 (1987-10-06) * |
See also references of EP1346403A2 * |
Also Published As
Publication number | Publication date |
---|---|
DE10064479A1 (de) | 2002-07-04 |
CN1481579A (zh) | 2004-03-10 |
EP1346403A2 (de) | 2003-09-24 |
TW550715B (en) | 2003-09-01 |
CN1222984C (zh) | 2005-10-12 |
WO2002052626A2 (de) | 2002-07-04 |
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