WO2002050877A1 - Systeme d'exposition a un faisceau d'electrons, element correcteur, procede de correction et procede d'exposition - Google Patents

Systeme d'exposition a un faisceau d'electrons, element correcteur, procede de correction et procede d'exposition Download PDF

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Publication number
WO2002050877A1
WO2002050877A1 PCT/JP2001/009813 JP0109813W WO0250877A1 WO 2002050877 A1 WO2002050877 A1 WO 2002050877A1 JP 0109813 W JP0109813 W JP 0109813W WO 0250877 A1 WO0250877 A1 WO 0250877A1
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WO
WIPO (PCT)
Prior art keywords
electron beam
conductive members
exposure apparatus
unit
irradiation area
Prior art date
Application number
PCT/JP2001/009813
Other languages
English (en)
Japanese (ja)
Inventor
Harunobu Muto
Hiroshi Yano
Original Assignee
Advantest Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advantest Corporation filed Critical Advantest Corporation
Publication of WO2002050877A1 publication Critical patent/WO2002050877A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30433—System calibration
    • H01J2237/3045—Deflection calibration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography

Definitions

  • Electron beam exposure apparatus correction member, correction method, and exposure method
  • the present invention relates to an electron beam exposure apparatus, a correction member, a correction method, and an exposure method.
  • This application is related to the following Japanese patent application. For those designated countries that are allowed to be incorporated by reference to the literature, the contents described in the following application shall be incorporated into this application by reference, and shall be part of the description of this application.
  • a conventional electron beam exposure apparatus deflects an electron beam by a deflector and irradiates the electron beam on a predetermined region of a wafer. In order to irradiate a desired position on the wafer with the electron beam, it is necessary to correct the irradiation position of the electron beam in advance.
  • FIG. 1 shows a correction member 12 in a conventional electron beam exposure apparatus 10.
  • the correction member 12 detects a mark 16 provided on the wafer stage 14 and electrons emitted or scattered from the mark 16 when the mark 16 is irradiated with an electron beam.
  • a detection unit 18 The electron beam exposure apparatus 10 deflects the electron beam by the deflector 20 to scan the mark section 16 with the electron beam.
  • the detector 18 detects electrons scattered from the mark 16 when the mark 16 is irradiated with an electron beam.
  • the electron beam exposure apparatus 10 detects the position of the edge from the timing at which the electron beam scans the edge of the mark section 16 and corrects the irradiation position of the electron beam.
  • the detection unit 18 detects electrons scattered from the mark unit 16, and therefore, in order to correct the irradiation positions of a plurality of electron beams, it is necessary to use You have to make corrections one by one, Problem arises.
  • an object of the present invention is to provide an electron beam exposure apparatus, a correction member, a correction method, and an exposure method that can solve the above-described problems. This object is achieved by a combination of features described in the independent claims.
  • the dependent claims define further advantageous embodiments of the present invention. Disclosure of the invention
  • an electron beam exposure apparatus for exposing a pattern on a wafer with an electron beam, comprising: a wafer stage; and an electron beam generator for generating the electron beam.
  • a beam generating unit ; a mark unit having a plurality of conductive members disposed at a narrow interval in the wafer stage with a small diameter of the electron beam;
  • a measuring unit for measuring a current value of a current flowing through the conductive member.
  • the mark portion has three or more conductive members, and any one of the three or more conductive members and another conductive member are separated by a distance smaller than the diameter of the electron beam. It may be arranged.
  • the plurality of conductive members may be provided radially.
  • the electronic device may further include a detection control unit that detects an irradiation position of the electron beam based on the plurality of current values measured by the measurement unit.
  • the apparatus may further include a detection control unit that detects astigmatism of the electron beam based on the plurality of current values measured by the measurement unit. ⁇
  • the apparatus may further include a detection control unit that detects a rotation amount of the electron beam based on the plurality of current values measured by the measurement unit.
  • the detection control unit may correct an irradiation area of the electron beam at a position where the electron beam is irradiated on all of the plurality of conductive members.
  • the apparatus further includes a deflecting unit having a plurality of deflection electrodes, and deflecting the electron beam, wherein the detection control unit is configured to determine the plurality of deflection electrodes based on the plurality of current values measured by the measurement unit. May be controlled.
  • Each of the plurality of conductive members may be provided corresponding to each of the plurality of deflection electrodes.
  • a storage unit that stores a current value flowing through each of the plurality of conductive members when the irradiation region of the electron beam does not shift, wherein the detection control unit is configured to measure the plurality of conductive members by the measurement unit;
  • a voltage may be applied to the plurality of deflection electrodes so that a current value of a current flowing through the conductive member is substantially equal to the current value stored in the storage unit.
  • the image processing apparatus may further include a correction value calculation unit that calculates a correction value for correcting the beam irradiation area.
  • the mark portion may be larger than a range that can be irradiated with the electron beam when the electron beam is deflected by the deflection portion.
  • the wafer stage may further include a high-resistance layer having a resistivity higher than the resistivity of the conductive member, and the mark portion may be formed on the high-resistance layer.
  • the apparatus further includes a plurality of the electron beam generation units, and a plurality of the mark units corresponding to the plurality of the electron beam generation units, wherein the measurement unit is configured to generate an electron beam from each of the plurality of the electron beam generation units. Then, the current value of the current flowing through the plurality of conductive members of each of the plurality of mark portions may be measured.
  • the interval between the mark portions and the interval between the electron beams may be substantially equal.
  • the apparatus further includes a plurality of deflecting units for deflecting each of the plurality of electron beams generated by each of the plurality of electron beam generating units, wherein an arrangement interval of the mark units and an arrangement interval of the deflection units are substantially equal. Is also good.
  • a correction member for correcting an irradiation area of an electron beam in an electron beam exposure apparatus, wherein the substrate and the substrate have a diameter of the electron beam. Also a mark portion having a plurality of conductive members arranged at a narrow interval, A wiring unit connected to each of the plurality of conductive members, the wiring unit having a plurality of wirings generated by the irradiation of the electron beam, and configured to output a current value of a current flowing through each of the plurality of conductive members to an external measurement unit.
  • the mark portion has three or more conductive members, and any one of the three conductive members and another conductive member are separated by a distance smaller than the diameter of the electron beam. May be arranged.
  • the substrate may further include a high-resistance layer having a resistivity higher than the resistivity of the conductive member, and the mark portion may be formed on the high-resistance layer.
  • a plurality of the mark portions may be further provided, and an arrangement interval of the mark portions and an interval of the electron beam may be substantially equal.
  • the plurality of conductive members may be provided radially.
  • a method for correcting an irradiation area of an electron beam in an electron beam exposure apparatus wherein the electron beam exposure apparatus includes: a wafer stage; and a wafer stage; A mark portion including a plurality of conductive members arranged at a small distance from each other; a generating step of generating the electron beam; a generating step of irradiating the electron beam; and And a correction step of correcting the irradiation area of the electron beam based on the plurality of measured current values.
  • the method may further include a detecting step of detecting the irradiation area of the electron beam based on the plurality of measured current values.
  • the method may further include the step of correcting the irradiation area such that the current value obtained is substantially equal to the current value stored in the storage step.
  • an electron beam exposure method in an electron beam exposure apparatus for exposing a wafer with an electron beam comprising: A stage including a plurality of conductive members arranged at a distance smaller than a diameter of the electron beam, and a plurality of deflection electrodes, wherein the deflection unit deflects the electron beam.
  • Generating the electron beam measuring the current value of the current generated by the electron beam irradiation and flowing through the plurality of conductive members, and Correcting the irradiation area of the electron beam based on the voltage value applied to each of the plurality of deflection electrodes when the irradiation area of the electron beam is corrected.
  • FIG. 1 shows a correction member in a conventional electron beam exposure apparatus.
  • FIG. 2 shows a configuration diagram of an electron beam exposure apparatus according to the embodiment of the present invention.
  • FIG. 3 shows a top view of the correction member according to the embodiment of the present invention.
  • FIG. 4 is a top view of the correction member according to the embodiment of the present invention.
  • FIG. 5 is a top view of the correction member according to the embodiment of the present invention.
  • FIG. 6 shows a cross-sectional view of the correction member according to the embodiment of the present invention.
  • FIG. 7 shows a cross-sectional view of the correction member according to the embodiment of the present invention.
  • FIG. 2 shows a configuration of an electron beam exposure apparatus 100 according to one embodiment of the present invention.
  • the electron beam exposure apparatus 100 performs a predetermined exposure process on the wafer 150 using an electron beam.
  • a control system 160 for controlling the operation of each component included in the exposure unit 102.
  • the exposure unit 102 generates an electron beam inside the housing 104, and forms an electron beam forming unit 110 for shaping the cross-sectional shape of the electron beam as desired.
  • Irradiation switching means 130 for independently switching whether to irradiate 150 or not for each electron beam, and wafer projection system 14 for adjusting the direction and size of the image of the pattern transferred to wafer 150
  • An electron optical system including 0 is provided.
  • the exposure unit 102 includes a wafer stage 1502 on which a correction member 206 for correcting the irradiation area of the electron beam or the deflection unit electron beam 150 and a wafer stage 150 are mounted. And a stage system including a wafer stage driving section 154 for driving the second stage.
  • the correction member 206 includes a substrate, a mark portion having a plurality of conductive members disposed on the substrate at a small distance from each other, and a plurality of conductive members respectively connected to the plurality of conductive members. And a wiring portion having a wiring.
  • the exposure unit 102 further includes a clamp member 200 connected to the wiring unit of the correction member 206.
  • the electron beam shaping means 110 includes a plurality of electron guns 112 for generating a plurality of electron beams, and a first shaping device having a plurality of openings for shaping the cross-sectional shape of the electron beam by passing the electron beam.
  • Member 1 1 4 and second molded member 1 2 2, 1st multi-axis electron lens 1 16 for independently converging multiple electron beams and adjusting the focus of electron beam 1st molded member 1 1 It has a first shaping / deflecting unit 118 and a second shaping / deflecting unit 120 for independently deflecting a plurality of electron beams passing through 4.
  • the irradiation switching means 130 independently converges the plurality of electron beams and adjusts the focal point of the electron beam, and deflects the plurality of electron beams independently for each electron beam.
  • An electron beam shielding member for shielding the electron beam deflected by the ranking electrode array.
  • Blankin in other examples: Array 1 3 4 may be a blanking aperture 'array' device
  • the wafer projection system 140 independently focuses a plurality of electron beams to reduce the irradiation diameter of the electron beam, and a third multi-axis electron lens 142, and independently converges the plurality of electron beams.
  • a fifth multi-axis electron lens 148 that functions as an objective lens for the wafer 150 and converges a plurality of electron beams independently.
  • the deflecting unit 146 includes a plurality of deflectors. Each deflector has a plurality of deflection electrodes.
  • the control system 160 includes an overall control unit 170 and an individual control unit 180.
  • the individual control unit 180 includes an electron beam control unit 182, a multi-axis electron lens control unit 1884, a molding deflection control unit 1886, a blanking electrode array control unit 1888, and deflection control. It has a section 190, a measurement section 1992, and a wafer stage control section 1994.
  • the general control unit 170 is, for example, a workstation, and performs general control of each control unit included in the individual control unit 180.
  • the electron beam control unit 18 controls the electron gun 11.
  • the multi-axis electronic lens control unit 18 4 is composed of the first multi-axis electronic lens 1 16, the second multi-axis electronic lens 13 2, the third multi-axis electronic lens 14 2, and the fourth multi-axis electronic lens 14 4 And the current supplied to the fifth multi-axis electron lens 148 is controlled.
  • the shaping / deflecting control unit 186 controls the first shaping / deflecting unit 118 and the second shaping / deflecting unit 120.
  • the blanking electrode array controller 188 controls the voltage applied to the deflection electrodes included in the blanking electrode array 134.
  • the deflection control unit 190 controls the voltage applied to the deflection electrodes of the plurality of deflectors included in the deflection unit 146.
  • the measuring section 1992 is connected to the clamp member 200 and measures current values generated in a plurality of conductive members by electron beam irradiation.
  • the measuring section 1922 may further detect the sum of the current values generated in the plurality of conductive members 21 by the irradiation of the electron beam, and calculate the current value of the electron beam.
  • Wafer stage controller 194 controls wafer stage driver 154 to move wafer stage 152 to a predetermined position.
  • the general control unit 170 controls the deflection unit 146 according to a plurality of current values flowing through each of the plurality of conductive members measured by the measurement unit 1992 to compensate for the irradiation area of the electron beam.
  • a detection control unit 172 that corrects, a storage unit 174 that stores the current value of the current flowing through each of the plurality of conductive members and the irradiation area of the electron beam in association with each other, And a correction value calculation unit 176 for calculating a correction value for correcting the irradiation area of the electron beam based on a plurality of current values flowing through each of the conductive members.
  • the irradiation area is an area irradiated with the electron beam, and is determined by the irradiation position of the electron beam, astigmatism, and the amount of rotation.
  • the detection control unit 172 detects the irradiation position, astigmatism, and Z or the amount of rotation of the electron beam based on the plurality of current values measured by the measurement unit 1992, and detects the irradiation area of the electron beam. Is detected.
  • the storage unit 1-4 stores a current value flowing through each of the plurality of conductive members of the correction member 206 when there is no shift in the irradiation area of the electron beam. Then, the detection control section 172 operates such that the current value flowing through each of the plurality of conductive members measured by the measurement section 1992 is substantially equal to the current value stored in the storage section 174. A voltage is applied to a plurality of deflection electrodes of the deflector included in the deflection unit 146. Then, the correction value calculation unit 1776 determines that the current value flowing through each of the plurality of conductive members measured by the measurement unit 1992 is substantially equal to the current value stored in the storage unit 174. In, a correction value for correcting the electron beam irradiation area is calculated based on the voltage values applied to the plurality of deflection electrodes of the deflector included in the deflection unit 146.
  • FIG. 3 shows a top view of the correction member 206.
  • the correction member 206 includes, for example, a substrate 208 formed of silicon, a plurality of conductive mark portions 210 that generate current by irradiation with an electron beam, a mark portion 210, and a clamp portion. And a wiring section 220 for electrically connecting the wiring section 200 with the wiring section 220.
  • the wiring portion 220 has a plurality of bump portions 222, and the bump portion 222 is formed along the circumference of the correction member 206 outside the region where the mark portion 210 is provided. Is preferably performed.
  • the plurality of mark portions 210 are provided corresponding to the positions where the plurality of electron guns 112 are provided.
  • the plurality of mark portions 210 are arranged at intervals substantially equal to the interval between electron beams.
  • the plurality of deflectors of 6 shall be provided corresponding to the positions where they are provided. Is preferred. Preferably, the plurality of mark portions are arranged at intervals substantially equal to the arrangement intervals of the deflectors.
  • the correction member 206 configured as described above, the irradiation area of a plurality of electron beams can be corrected at the same time, so that the exposure position of the electron beam of an electron beam exposure apparatus that generates a plurality of electron beams can be quickly set. Can be corrected.
  • the mark region 210 is irradiated with an electron beam to correct the irradiation area, and at the same time, the plurality of electron beams are irradiated. Can be measured when each mark is irradiated on the mark portion 210.
  • FIG. 4 shows a top view of the mark portion 210.
  • the mark portion 210 has a plurality of conductive members 211 arranged at a distance d1 smaller than the diameter d2 of the electron beam.
  • a region shown by a broken line is an irradiation region of the electron beam corresponding to the diameter d 2 of the electron beam.
  • the irradiation area of the electron beam that is, the cross-sectional shape of the electron beam may be rectangular or circular.
  • the mark portion 210 has three or more conductive members 212, and any one of the three or more conductive members 211 is connected to another conductive member.
  • the conductive member is disposed at a distance d1 smaller than the diameter d2 of the electron beam.
  • the plurality of conductive members 211 each have an apex angle, and bisectors L 1 to L 4 of each apex angle intersect at a point ⁇ . It is preferable that the plurality of conductive members 211 are arranged so that all the conductive members 211 are irradiated with the electron beam when there is no shift in the irradiation area of the electron beam.
  • the plurality of conductive members 211 of the mark part 210 are provided corresponding to the plurality of deflection electrodes 144 of each deflector of the deflection part 146. It is preferred that When each deflector has, for example, eight deflection electrodes, it is preferable to have eight conductive members 211 of the mark part 210.
  • FIG. 5 shows a top view of the mark portion 210.
  • the mark portion 210 is composed of eight conductive members 211- :! ⁇ 2 1 2-8. Each conductive member 2 1 2 _ :! ⁇ 2 1 2 It is preferable that the electrodes 18 are arranged radially around a region 300 to be irradiated with the electron beam when there is no shift in the irradiation region of the electron beam.
  • regions 300 and 302 indicated by broken lines are irradiation regions corresponding to the diameter of the electron beam.
  • the wiring section 220 includes a plurality of bump sections 2 2 2— :! to 2 2—8, a bump section 2 2 2—1 to 2 2—8, and a conductive member 2 1 2— :! To 2 1 2— 8 and 2 2 4— :! ⁇ 2 2 4-8.
  • Wiring section 220 is bump section 2 2— :! It contacts the clamp member 200 at ⁇ 2 2 2-8.
  • Wiring 2 2 4—1 to 2 2 4—8 and conductive material 2 1 2— :! 2 to 8 are preferably integrally formed of the same material.
  • the mark portion 210 is preferably larger than the range in which the electron beam can be irradiated when the electron beam is deflected by the deflecting portion 146.
  • the mark portion 210 may be substantially equal in size to an opening provided in the fifth multi-axis electron lens 148 through which an electron beam passes, and is preferably larger than the opening. Therefore, even if the irradiation position of the electron beam is shifted, the electron beam can be irradiated on the mark portion 210. Therefore, the detection control section 172 can appropriately detect the irradiation area of the electron beam.
  • FIG. 6 shows a sectional view of the correction member 206.
  • the correction member 206 is preferably mounted on the wafer stage 152 such that the centers of the plurality of mark portions 210 correspond to the optical axes of the respective electron beams.
  • the clamp member 200 is pressed down so as to come into contact with a bump portion 222 provided on the correction member 206 when the correction member 206 is placed on the wafer stage 152, Section 22 2 and the measuring section 19 2 are electrically connected.
  • the clamp member 200 is moved and held in the direction indicated by the arrow in the figure. Then, the correction member 206 is transferred from the wafer stage 152 to the outside of the wafer stage 152 by a transfer means such as a transfer arm.
  • FIG. 7 shows an enlarged cross-sectional view of the correction member 206.
  • the correction substrate 208 includes a silicon wafer 230 and a high-resistance layer 230 having a higher resistivity than the conductive member 212.
  • the mark portion 210 is preferably formed in the high resistance layer 232.
  • the correction member 206 is formed by forming a high-resistance layer 232 on a silicon wafer 230 to form a silicon substrate 208, and a photoresist layer on the high-resistance layer 232.
  • the high-resistance layer 232 has a resistivity low enough to prevent electron charging due to electron beam irradiation, and a resistance high enough to provide insulation between the conductive member 212 and the wiring 224. It is preferable to have a ratio.
  • the high-resistance layer 232 is made of amorphous silicon or non-doped polysilicon, and is formed to a thickness of about 1 ⁇ m.
  • the conductive material is preferably a non-magnetic and hardly oxidizable metal such as Pt. Further, the conductive material is preferably formed to a thickness that does not allow the electron beam accelerated by an acceleration voltage of, for example, about 50 KeV to pass through. The thickness of the conductive material may be 2 m or more.
  • the wiring 222 is formed so as to be drawn out along the circumference of the correcting member 206 outside the region where the mark part 210 is provided, and the conductive member 212 and the bump part 222 are formed. Connect with 2.
  • the bumps 2 2 4 are formed by soldering.
  • the clamp member 200 has a connector 202 for electrically connecting the bump section 222 and the measuring section 1992, and a substrate 204 holding the connector 202.
  • the mark portion 210 is provided on the high-resistance layer 232, the insulation between the conductive members 212 and the wiring 224 is maintained, and further, the high-resistance layer 232 is charged with electrons. Since it is difficult, the measuring section 1992 can measure an accurate current value. Therefore, the irradiation area of the electron beam can be accurately corrected.
  • the operation of the electron beam exposure apparatus 100 according to the present embodiment will be described with reference to FIGS.
  • the correction member 206 is placed on the stage 1502 by a transfer unit that transfers the wafer 150 and the correction member 206.
  • the wafer stage controller 194 moves the wafer stage 152 to a predetermined position.
  • the wafer stage controller 194 preferably moves the wafer stage 152 to a position where each of the plurality of electron beams irradiates the mark portion 210 as the predetermined position.
  • the plurality of mark portions 210 are provided at intervals substantially equal to the interval between the plurality of electron beams, and the wafer stage control unit 1994 controls the wafer stage 15 Each electron beam is moved to a position for irradiating the approximate center of the mark portion 210.
  • the clamp member 200 is pushed down so as to come into contact with the correction member 206, and the bump portion 222 provided on the component member 206 is formed. 2 and the measuring section 19 2 are electrically connected.
  • the wafer stage 152 is moved to a predetermined position, the wafer stage 152 is moved upward so that the correction member 206 and the clamp member 200 come into contact with each other. Well ,.
  • the general control unit 170 controls the scanning start means so that each mark unit 2 10 is irradiated with an electron beam.
  • the electron beam applied to each mark portion 210 generates a current in the conductive member 212 provided in the area where the electron beam has been applied.
  • the measuring section 19 2 is a conductive member 2 1 2— :! Measure the current value of the current generated in ⁇ 2 12-8.
  • the detection control unit 172 detects the irradiation area of each electron beam based on the current value measured by the measurement unit 1992.
  • the detection control unit 17 2 is configured to measure all the conductive members 2 1 2— :! When it is measured that the current values of the generated currents are substantially equal to each other, the electron beam irradiates the approximate center of the mark portion 210, and the astigmatism and rotation of the electron beam are reduced. Judge that it has not occurred.
  • the detection control section 17 2 is generated, for example, between the opposing conductive members 2 12 -1 and 2 1 2 5.
  • the current values generated by the opposing conductive members 2 1 2 _ 3 and 2 1 2-7 are equal, and the current values generated by the conductive members 2 1 2-1 and 2 1 2-5 When the current values generated in the conductive members 21 23 and 21 22 differ from each other, it is determined that the rotation of the electron beam and Z or astigmatism have occurred.
  • the storage unit 174 stores the respective conductive members 2 1 2— :! by electron beam irradiation when there is no shift in the electron beam irradiation area. It is preferable to store in advance the current value of the current flowing through 22 1 ⁇ 2 ⁇ 8. At this time, the detection control section 17 2 determines the current value stored in the storage section 17 4 and the measurement section 19 2 It is desirable to detect the irradiation area of the electron beam based on the measured current value. In the present embodiment, when the electron beam is applied to the approximate center of the mark section 210, the storage section 174 stores the current to be passed through each of the conductive members 21-2-1 to 21-2-8. The current value is stored.
  • the electron beam irradiates substantially the center of the mark section 210 as shown by a broken line 300 in FIG.
  • the area of the region irradiated with the electron beam is substantially equal. Therefore, the current values generated by the electron beams applied to the respective conductive members 2 12 _ 1 to 2 12 -8 are substantially equal. Then, measuring section 192 detects the current value.
  • the storage unit 17 2 stores a current value of a current flowing through each of the conductive members 2 12-1 to 2 12-8 when the electron beam is applied to a substantially center of the mark unit 210, that is, The current value substantially equal to the current value measured by the measuring section 192 is stored.
  • the detection control section 172 stores the current value stored in the storage section 172 and the measuring section 1992. Recognizes that the measured current value is substantially the same as in the above, and judges that there is no shift in the electron beam irradiation area.
  • the electron beam is irradiated by a plurality of conductive members 2 12-1 to 2 12-8.
  • the area of the region irradiated with the electron beam in each of the conductive members 2 12-:! To 2 12-8 is different. Therefore, each conductive member 2 1 2—:! ⁇ 2 1 2—Electron beam irradiated to 8
  • the generated current values are different from each other.
  • the detection control section 172 recognizes that the current value stored in the storage section 172 is different from the current value measured in the measurement section 1992, and there is a shift in the electron beam irradiation area. Judge.
  • the storage unit 174 when there is no shift in the irradiation area of the electron beam, stores the respective conductive members 2 1 2— :! The ratio of the current value of the current flowing through 22 1 2—8 may be stored.
  • the detection control section 17 2 calculates the ratio stored in the storage section 17 4 and the current flowing through each of the conductive members 2 12-1 to 2 12-8 measured in the measurement section 19 2. It is desirable to detect the irradiation area of the electron beam based on the current value ratio.
  • the detection control unit 172 controls the deflection control unit 190 to correct the electron beam irradiation area based on the detected electron beam irradiation area.
  • the deflection control unit 190 controls the voltage applied to the plurality of deflection electrodes 144 of each deflector included in the deflection unit 146 based on the instruction from the detection control unit Is corrected.
  • the correction value calculation unit 176 calculates a correction value for correcting the irradiation area of the electron beam based on the voltage value applied to the plurality of deflection electrodes 147. Further, the correction value calculation unit 176 may calculate a correction value for correcting the irradiation area of the electron beam based on the detected irradiation area of the electron beam.
  • the correction value calculation unit 176 stores the current values of the respective currents generated in the conductive members 2 1 2— :! to 2 1 2—8 by the electron beam applied to the mark unit 2 10, It is desirable to calculate the correction value so as to be substantially equal to the current value stored in 2.
  • the deflection control section 190 controls the voltage value applied to the deflection electrode of the deflector included in the deflection section 148 based on the correction value to correct the irradiation area of the electron beam.
  • the plurality of conductive members 2 12- Since the electron beam irradiation area is detected and the electron beam irradiation area is corrected based on the current value of the current flowing through 2-12-8, the irradiation areas of a plurality of electron beams can be corrected simultaneously. Therefore, even when exposure processing is performed using a plurality of electron beams, the irradiation area of the plurality of electron beams can be quickly compensated. Can be corrected. Furthermore, even when the detector 18 is not provided (see FIG. 1), the irradiation area of the electron beam can be corrected.
  • the exposure processing of the wafer 150 is performed using the calculated correction value.
  • the operation in which the electron beam exposure apparatus 100 exposes a desired pattern on the wafer 150 will be described with reference to FIG. 2.
  • the correction member 206 is irradiated with an electron beam.
  • the operation of performing the exposure may be substantially the same as the operation of irradiating the wafer 150 with the electron beam in the exposure processing.
  • Multiple electron guns 1 1 2 generate multiple electron beams.
  • the generated electron beam is applied to the first forming member 114 to be formed.
  • a plurality of electron beams may be generated by further comprising means for dividing the electron beam generated by the electron gun 112 into a plurality of electron beams.
  • the first multiaxial electron lens 1 16 independently converges a plurality of rectangularly shaped electron beams, and independently adjusts the focus of the electron beam on the second formed member 122 for each electron beam.
  • the first shaping deflection unit 118 deflects a plurality of rectangularly shaped electron beams to a desired position with respect to the second shaping member independently for each electron beam.
  • the second shaping deflection unit 120 deflects the plurality of electron beams deflected by the first shaping deflection unit 118 in a direction substantially perpendicular to the second shaping member 122 independently for each electron beam.
  • the second molding member 122 including a plurality of openings having a rectangular shape is provided with a plurality of electron beams having a rectangular cross-sectional shape applied to each of the openings. It is further shaped into an electron beam having a rectangular cross section.
  • the second multi-axis electron lens 132 converges a plurality of electron beams independently, and independently adjusts the focus of the electron beam with respect to the blanking electrode array 134 for each electron beam.
  • the electron beam focused by the second multi-axis electron lens 13 2 passes through a plurality of apertures included in the blanking electrode array 1 34.
  • the blanking electrode array control unit 188 controls whether or not to apply a voltage to a deflection electrode formed in the blanking electrode array 134 and provided near each aperture.
  • the blanking electrode array 1 3 4 is based on the voltage applied to the deflection electrode, It is switched whether or not to irradiate the wafer 150 with the electron beam.
  • the electron beam that is not deflected by the blanking electrode array 134 has its electron beam diameter reduced by the third multi-axis electron lens 142 and passes through an opening included in the electron beam shielding member 136.
  • the fourth multi-axis electron lens 144 independently converges the plurality of electron beams, and independently adjusts the focus of the electron beam with respect to the deflection unit 144 for each electron beam. Is incident on the deflector included in the deflecting unit 146.
  • the deflection control unit 190 controls the plurality of deflectors included in the deflection unit 146 independently.
  • the deflecting unit 146 deflects the plurality of electron beams incident on the plurality of deflectors to a desired exposure position on the wafer 150 independently for each electron beam.
  • the plurality of electron beams that have passed through the deflecting unit 146 are adjusted in focus on the wafer 150 by the fifth multi-axis electron lens 148, and are irradiated on the wafer 150.
  • the wafer stage controller 192 moves the wafer stage 152 in a fixed direction.
  • the blanking electrode array control unit 188 determines an aperture through which an electron beam passes based on the exposure pattern data, and controls power for each aperture.
  • the aperture through which the electron beam passes is appropriately changed in accordance with the movement of the wafer 150, and the electron beam is deflected by the deflecting unit 146, thereby exposing a desired circuit pattern to the wafer 150. It becomes possible.
  • the irradiation area of the electron beam can be appropriately corrected.

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

Cette invention se rapporte à un système d'exposition à un faisceau d'électrons, qui permet de produire des motifs sur des plaquettes par exposition à un faisceau d'électrons et qui comprend à cet effet un étage à plaquettes, une unité génératrice de faisceau d'électrons, et un élément correcteur placé sur l'étage à plaquettes. L'élément correcteur comporte un substrat, une unité de marquage contenant plusieurs éléments conducteurs disposés à des intervalles inférieurs au diamètre du faisceau d'électrons, et plusieurs unités de câblage/plages de connexion respectivement connectées aux éléments conducteurs et émettant à destination d'une unité de mesure externe les valeurs courantes des courants générés par l'exposition au faisceau d'électrons et traversant respectivement les éléments conducteurs.
PCT/JP2001/009813 2000-12-20 2001-11-09 Systeme d'exposition a un faisceau d'electrons, element correcteur, procede de correction et procede d'exposition WO2002050877A1 (fr)

Applications Claiming Priority (2)

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JP2000386986A JP2002190437A (ja) 2000-12-20 2000-12-20 電子ビーム露光装置及び校正方法
JP2000-386986 2000-12-20

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WO2002050877A1 true WO2002050877A1 (fr) 2002-06-27

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8735599B2 (en) 2004-06-18 2014-05-27 Novartis Vaccines And Diagnostics, Inc. Substituted imidazole derivates

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6500383B2 (ja) * 2014-10-03 2019-04-17 株式会社ニューフレアテクノロジー ブランキングアパーチャアレイ及び荷電粒子ビーム描画装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05102019A (ja) * 1991-10-08 1993-04-23 Nippon Seiko Kk アライメントマーク位置検出装置
JPH06177025A (ja) * 1992-12-10 1994-06-24 Hitachi Ltd 電子ビーム描画方法および描画装置
JPH08191042A (ja) * 1995-01-11 1996-07-23 Hitachi Ltd 電子線描画装置およびその調整方法
US5929454A (en) * 1996-06-12 1999-07-27 Canon Kabushiki Kaisha Position detection apparatus, electron beam exposure apparatus, and methods associated with them

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05102019A (ja) * 1991-10-08 1993-04-23 Nippon Seiko Kk アライメントマーク位置検出装置
JPH06177025A (ja) * 1992-12-10 1994-06-24 Hitachi Ltd 電子ビーム描画方法および描画装置
JPH08191042A (ja) * 1995-01-11 1996-07-23 Hitachi Ltd 電子線描画装置およびその調整方法
US5929454A (en) * 1996-06-12 1999-07-27 Canon Kabushiki Kaisha Position detection apparatus, electron beam exposure apparatus, and methods associated with them

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8735599B2 (en) 2004-06-18 2014-05-27 Novartis Vaccines And Diagnostics, Inc. Substituted imidazole derivates

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