JP2002190437A - 電子ビーム露光装置及び校正方法 - Google Patents
電子ビーム露光装置及び校正方法Info
- Publication number
- JP2002190437A JP2002190437A JP2000386986A JP2000386986A JP2002190437A JP 2002190437 A JP2002190437 A JP 2002190437A JP 2000386986 A JP2000386986 A JP 2000386986A JP 2000386986 A JP2000386986 A JP 2000386986A JP 2002190437 A JP2002190437 A JP 2002190437A
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- conductive members
- exposure apparatus
- unit
- mark
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000010894 electron beam technology Methods 0.000 title claims abstract description 280
- 238000000034 method Methods 0.000 title claims description 11
- 238000005259 measurement Methods 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000001514 detection method Methods 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 description 27
- 238000012937 correction Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30433—System calibration
- H01J2237/3045—Deflection calibration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
- Electron Sources, Ion Sources (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000386986A JP2002190437A (ja) | 2000-12-20 | 2000-12-20 | 電子ビーム露光装置及び校正方法 |
PCT/JP2001/009813 WO2002050877A1 (fr) | 2000-12-20 | 2001-11-09 | Systeme d'exposition a un faisceau d'electrons, element correcteur, procede de correction et procede d'exposition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000386986A JP2002190437A (ja) | 2000-12-20 | 2000-12-20 | 電子ビーム露光装置及び校正方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2002190437A true JP2002190437A (ja) | 2002-07-05 |
Family
ID=18854000
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000386986A Withdrawn JP2002190437A (ja) | 2000-12-20 | 2000-12-20 | 電子ビーム露光装置及び校正方法 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP2002190437A (fr) |
WO (1) | WO2002050877A1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016076548A (ja) * | 2014-10-03 | 2016-05-12 | 株式会社ニューフレアテクノロジー | ブランキングアパーチャアレイ及び荷電粒子ビーム描画装置 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4836280B2 (ja) | 2004-06-18 | 2011-12-14 | ノバルティス バクシンズ アンド ダイアグノスティックス,インコーポレーテッド | 癌を治療するためのキネシンスピンドルタンパク質(ksp)阻害剤としてのn−(1−(1−ベンジル−4−フェニル−1h−イミダゾール−2−イル)−2,2−ジメチルプロピル)ベンズアミド誘導体および関連化合物 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05102019A (ja) * | 1991-10-08 | 1993-04-23 | Nippon Seiko Kk | アライメントマーク位置検出装置 |
JPH06177025A (ja) * | 1992-12-10 | 1994-06-24 | Hitachi Ltd | 電子ビーム描画方法および描画装置 |
JP3298347B2 (ja) * | 1995-01-11 | 2002-07-02 | 株式会社日立製作所 | 電子線描画装置 |
US5929454A (en) * | 1996-06-12 | 1999-07-27 | Canon Kabushiki Kaisha | Position detection apparatus, electron beam exposure apparatus, and methods associated with them |
-
2000
- 2000-12-20 JP JP2000386986A patent/JP2002190437A/ja not_active Withdrawn
-
2001
- 2001-11-09 WO PCT/JP2001/009813 patent/WO2002050877A1/fr active Search and Examination
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016076548A (ja) * | 2014-10-03 | 2016-05-12 | 株式会社ニューフレアテクノロジー | ブランキングアパーチャアレイ及び荷電粒子ビーム描画装置 |
TWI647734B (zh) * | 2014-10-03 | 2019-01-11 | 日商紐富來科技股份有限公司 | Masking aperture array and charged particle beam depicting device |
Also Published As
Publication number | Publication date |
---|---|
WO2002050877A1 (fr) | 2002-06-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A300 | Application deemed to be withdrawn because no request for examination was validly filed |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20080304 |