WO2002027776A1 - Procede et appareil de traitement de substrat - Google Patents
Procede et appareil de traitement de substrat Download PDFInfo
- Publication number
- WO2002027776A1 WO2002027776A1 PCT/JP2001/004962 JP0104962W WO0227776A1 WO 2002027776 A1 WO2002027776 A1 WO 2002027776A1 JP 0104962 W JP0104962 W JP 0104962W WO 0227776 A1 WO0227776 A1 WO 0227776A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- gas
- substrate
- wet
- feed
- substrate processing
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP01936972A EP1255287A4 (en) | 2000-09-28 | 2001-06-12 | METHOD AND APPARATUS FOR TREATING SUBSTRATE |
KR10-2002-7006775A KR100458784B1 (ko) | 2000-09-28 | 2001-06-12 | 기판의 처리방법 및 처리 장치 |
US10/111,913 US20030066549A1 (en) | 2000-09-28 | 2001-06-12 | Substrate processing method, and apparatus therefor |
JP2002531474A JPWO2002027776A1 (ja) | 2000-09-28 | 2001-06-12 | 基板処理方法およびその装置 |
TW090118120A TW512456B (en) | 2000-09-28 | 2001-07-25 | Process and apparatus for treating substrate |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2000/006694 WO2002027775A1 (fr) | 2000-09-28 | 2000-09-28 | Procede et appareil de traitement de plaquettes |
JPPCT/JP00/06694 | 2000-09-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2002027776A1 true WO2002027776A1 (fr) | 2002-04-04 |
Family
ID=11736531
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2000/006694 WO2002027775A1 (fr) | 2000-09-28 | 2000-09-28 | Procede et appareil de traitement de plaquettes |
PCT/JP2001/004962 WO2002027776A1 (fr) | 2000-09-28 | 2001-06-12 | Procede et appareil de traitement de substrat |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2000/006694 WO2002027775A1 (fr) | 2000-09-28 | 2000-09-28 | Procede et appareil de traitement de plaquettes |
Country Status (6)
Country | Link |
---|---|
US (1) | US20030066549A1 (ja) |
EP (1) | EP1255287A4 (ja) |
JP (1) | JPWO2002027776A1 (ja) |
KR (1) | KR100458784B1 (ja) |
TW (2) | TW501178B (ja) |
WO (2) | WO2002027775A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101272818B1 (ko) * | 2008-09-15 | 2013-06-10 | 게부르. 쉬미트 게엠베하 | 기판 처리 방법, 기판 및 상기 방법을 수행하기 위한 처리 장치 |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040159335A1 (en) * | 2002-05-17 | 2004-08-19 | P.C.T. Systems, Inc. | Method and apparatus for removing organic layers |
KR100487549B1 (ko) * | 2002-09-26 | 2005-05-03 | 삼성전자주식회사 | 반도체 제조 설비를 위한 공기 공급 장치 |
DE10254990A1 (de) * | 2002-11-26 | 2004-07-22 | Technotrans Ag | Verfahren zum Entfernen von organischen Rückständen von feinstrukturierten Oberflächen |
KR100906634B1 (ko) * | 2003-01-20 | 2009-07-10 | 삼성전자주식회사 | 패턴의 형성 방법 및 이를 적용한 액정 표시 장치의 박막트랜지스터 기판의 제조방법 |
US7235479B2 (en) * | 2004-08-26 | 2007-06-26 | Applied Materials, Inc. | Organic solvents having ozone dissolved therein for semiconductor processing utilizing sacrificial materials |
JP2008516419A (ja) * | 2004-09-17 | 2008-05-15 | エフエスアイ インターナショナル インコーポレイテッド | ウェハー様物の加工のためのオゾンの使用 |
KR100666380B1 (ko) * | 2005-05-30 | 2007-01-09 | 삼성전자주식회사 | 포토레지스트 제거방법 및 이를 이용한 반도체 소자의 제조방법. |
SI1955335T1 (sl) * | 2005-11-29 | 2011-09-30 | Areva Np Gmbh | Postopek za dekontaminacijo površine, ki ima oksidno plast, komponente ali sistema jedrske naprave |
JP4786351B2 (ja) * | 2006-01-20 | 2011-10-05 | 株式会社東芝 | 処理装置及び処理方法 |
US8603924B2 (en) * | 2010-10-19 | 2013-12-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of forming gate dielectric material |
CN102610562A (zh) * | 2012-03-23 | 2012-07-25 | 上海华力微电子有限公司 | 含碳薄膜中碳元素的去除方法以及SiOC控挡片的再生方法 |
JP6300139B2 (ja) * | 2012-05-15 | 2018-03-28 | 株式会社Screenホールディングス | 基板処理方法および基板処理システム |
EP3013434A1 (en) * | 2013-06-28 | 2016-05-04 | James D. Lee | Methods and devices for protective filtration and delivery of respirable compounds |
CN103646915A (zh) * | 2013-11-28 | 2014-03-19 | 上海华力微电子有限公司 | SiCN薄膜中C元素的去除方法及监控片再生工艺 |
JP6520490B2 (ja) * | 2015-07-08 | 2019-05-29 | 信越化学工業株式会社 | パターン形成方法 |
JP6779701B2 (ja) * | 2016-08-05 | 2020-11-04 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び基板処理方法を実行させるプログラムが記録された記憶媒体 |
JP6811675B2 (ja) * | 2017-04-28 | 2021-01-13 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP6995547B2 (ja) | 2017-09-22 | 2022-01-14 | 株式会社Screenホールディングス | 薬液生成方法、薬液生成装置および基板処理装置 |
US20240050993A1 (en) * | 2022-08-09 | 2024-02-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Onsite cleaning system and method |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05109686A (ja) * | 1991-10-14 | 1993-04-30 | Nippon Steel Corp | シリコンウエーハの洗浄方法およびその装置 |
JPH0974080A (ja) * | 1995-09-04 | 1997-03-18 | Mitsubishi Gas Chem Co Inc | 半導体基板のオゾン洗浄方法 |
JP2000150349A (ja) * | 1998-11-13 | 2000-05-30 | Mitsubishi Electric Corp | フォトレジスト膜除去方法および装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0724265B2 (ja) * | 1988-04-13 | 1995-03-15 | 日本電気株式会社 | 半導体基板の洗浄装置 |
JPH05206021A (ja) * | 1992-01-28 | 1993-08-13 | Hitachi Ltd | 半導体装置の製造方法およびその装置 |
JPH0741326B2 (ja) * | 1992-04-10 | 1995-05-10 | 株式会社コスメック | 金型の落下防止装置 |
JPH0684843A (ja) * | 1992-09-02 | 1994-03-25 | Matsushita Electric Ind Co Ltd | 表面処理装置 |
KR940012061A (ko) * | 1992-11-27 | 1994-06-22 | 가나이 쯔또무 | 유기물제거방법 및 그 방법을 이용하기 위한 유기물제거장치 |
US5589422A (en) * | 1993-01-15 | 1996-12-31 | Intel Corporation | Controlled, gas phase process for removal of trace metal contamination and for removal of a semiconductor layer |
US6701941B1 (en) * | 1997-05-09 | 2004-03-09 | Semitool, Inc. | Method for treating the surface of a workpiece |
US20020157686A1 (en) * | 1997-05-09 | 2002-10-31 | Semitool, Inc. | Process and apparatus for treating a workpiece such as a semiconductor wafer |
US6869487B1 (en) * | 1997-05-09 | 2005-03-22 | Semitool, Inc. | Process and apparatus for treating a workpiece such as a semiconductor wafer |
JP2003533865A (ja) * | 1998-07-29 | 2003-11-11 | シーエフエムテイ・インコーポレーテツド | 電子構成要素の製造でオゾン含有プロセス流体を用いて電子構成要素を湿式処理する方法 |
JP3680577B2 (ja) * | 1998-09-17 | 2005-08-10 | セイコーエプソン株式会社 | レジスト除去洗浄方法及び装置 |
JP3671389B2 (ja) * | 1999-12-03 | 2005-07-13 | 三菱電機株式会社 | 基板処理方法および装置 |
KR20030019323A (ko) * | 2000-03-13 | 2003-03-06 | 맷슨 테크날러지 아이피 | 전자부품을 처리하기 위한 공정 및 장치 |
-
2000
- 2000-09-28 WO PCT/JP2000/006694 patent/WO2002027775A1/ja active Application Filing
- 2000-09-29 TW TW089120169A patent/TW501178B/zh active
-
2001
- 2001-06-12 US US10/111,913 patent/US20030066549A1/en not_active Abandoned
- 2001-06-12 EP EP01936972A patent/EP1255287A4/en not_active Withdrawn
- 2001-06-12 KR KR10-2002-7006775A patent/KR100458784B1/ko not_active IP Right Cessation
- 2001-06-12 WO PCT/JP2001/004962 patent/WO2002027776A1/ja not_active Application Discontinuation
- 2001-06-12 JP JP2002531474A patent/JPWO2002027776A1/ja active Pending
- 2001-07-25 TW TW090118120A patent/TW512456B/zh not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05109686A (ja) * | 1991-10-14 | 1993-04-30 | Nippon Steel Corp | シリコンウエーハの洗浄方法およびその装置 |
JPH0974080A (ja) * | 1995-09-04 | 1997-03-18 | Mitsubishi Gas Chem Co Inc | 半導体基板のオゾン洗浄方法 |
JP2000150349A (ja) * | 1998-11-13 | 2000-05-30 | Mitsubishi Electric Corp | フォトレジスト膜除去方法および装置 |
Non-Patent Citations (1)
Title |
---|
See also references of EP1255287A4 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101272818B1 (ko) * | 2008-09-15 | 2013-06-10 | 게부르. 쉬미트 게엠베하 | 기판 처리 방법, 기판 및 상기 방법을 수행하기 위한 처리 장치 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2002027776A1 (ja) | 2004-02-05 |
EP1255287A1 (en) | 2002-11-06 |
TW501178B (en) | 2002-09-01 |
EP1255287A4 (en) | 2008-07-09 |
TW512456B (en) | 2002-12-01 |
KR20020081213A (ko) | 2002-10-26 |
US20030066549A1 (en) | 2003-04-10 |
WO2002027775A1 (fr) | 2002-04-04 |
KR100458784B1 (ko) | 2004-12-03 |
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