WO2002027057A2 - Cible de pulverisation amelioree; methodes de fabrication et utilisation - Google Patents

Cible de pulverisation amelioree; methodes de fabrication et utilisation Download PDF

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Publication number
WO2002027057A2
WO2002027057A2 PCT/US2001/029897 US0129897W WO0227057A2 WO 2002027057 A2 WO2002027057 A2 WO 2002027057A2 US 0129897 W US0129897 W US 0129897W WO 0227057 A2 WO0227057 A2 WO 0227057A2
Authority
WO
WIPO (PCT)
Prior art keywords
metal
zinc
target
backing
sputterable material
Prior art date
Application number
PCT/US2001/029897
Other languages
English (en)
Other versions
WO2002027057A3 (fr
Inventor
Klaus Hartig
Johan Vanderstraeten
Original Assignee
Cardinal Cg Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cardinal Cg Company filed Critical Cardinal Cg Company
Priority to AU9304201A priority Critical patent/AU9304201A/xx
Publication of WO2002027057A2 publication Critical patent/WO2002027057A2/fr
Publication of WO2002027057A3 publication Critical patent/WO2002027057A3/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/06—Metallic material
    • C23C4/08—Metallic material containing only metal elements

Definitions

  • the present convention provides improved zinc sputtering targets of the type commonly used in depositing thin dielectric layers via sputtering, e.g., in the manufacture of low emissivity film stacks.
  • Sputtered coatings of various materials are used in a wide variety of applications.
  • One of the most common applications for thin sputtered films is in making thin optical films.
  • low emissivity films commonly applied to window glazings comprise a series of layers formed of metals and dielectrics such as metal oxides or nitrides.
  • such thin films are applied by sputtering a target of a specific material in a controlled atmosphere to produce the desired film composition. If a metal layer is being applied, (e.g., a layer of silver), the metal target will typically be sputtered in an inert atmosphere, such as argon.
  • Metal oxide and nitride films can be applied either by sputtering a target of the desired oxide or nitride or by sputtering a metal target in the presence of oxygen or nitrogen and allowing that sputtered metal to react to form the desired oxide or nitride.
  • One metal oxide layer which is common in the formation of low emissivity coatings is zinc oxide.
  • the popularity of zinc oxide in such film stacks can be attributed largely to the relatively high sputtering rate for zinc targets in an oxygenating atmosphere. This rapid sputtering rate speeds production, thereby reducing the cost of manufacturing the low emissivity film stack.
  • fireflies are particles of the zinc target which are knocked off during sputtering and are oxidized as they pass through the reactive gas.
  • the zinc from the target is sputtered on almost an atom-by-atom basis, and such energized zinc atoms will react with the oxidizing atmosphere as they proceed toward the substrate to be coated.
  • the larger particles associated with fireflies do not always oxidize and can land on the substrate as incompletely oxidized particles. Given the rather thin coatings used in low emissivity film stacks, such large particulate inclusions can have a noticeable adverse impact on the quality of the finished product.
  • a target for use in sputtering, a method of making such a target, and a method of depositing a film on a substrate.
  • a target comprises a backing adapted to be operatively connected to a sputtering power source and an outer layer of a sputterable material carried by the backing.
  • This sputterable material comprises a mixture of zinc and a second metal having a melting point less than that of the zinc.
  • the zinc and the second metal are present in the sputterable material in metallic form and are arranged as discrete volumes of the second metal in a matrix of zinc.
  • the second metal is selected from the group consisting of tin, bismuth and indium or alloys or admixtures thereof.
  • the target desirably comprises no less than 80% zinc on a weight basis, and optimally comprises no less than 91 % wt. zinc.
  • Another embodiment of the invention provides a method of forming a target for magnetron sputtering.
  • a backing having an exterior surface is provided.
  • Zinc metal and a second metal are simultaneously plasma sprayed to create an outer layer of a sputterable material carried by the backing.
  • the second metal used in this method has a melting point less than that of the zinc.
  • the second metal may be selected from the group consisting of tin, bismuth, and indium or alloys or admixtures thereof.
  • the zinc and the second metal are delivered from discrete sources, whereby the outer layer of sputterable material comprises discrete areas of the second metal in a matrix of zinc.
  • the present invention also provides a method of depositing a film on a substrate.
  • a target is provided.
  • This target comprises a backing and an outer layer of a sputterable material carried by the backing.
  • the sputterable material comprises a mixture of zinc and a second metal having a melting point less than that of the zinc.
  • the zinc and the second metal are present in the sputterable material in metallic form and arranged as discrete volumes of the second metal in a matrix of zinc.
  • the target and a substrate are placed in a sputtering chamber and the target is connected to a power source. Power is applied to the target while maintaining in the sputtering chamber a reactive atmosphere comprising oxygen.
  • sputtering of the target consumes the zinc and the discrete volumes of the second metal, thereby exposing areas of the second metal previously covered by zinc and exposing areas of zinc previously covered by the second metal.
  • FIG. 1 is a schematic illustration of a rotatable target made in accordance with the present invention:
  • Figure 2 is a schematic cross - sectional view of a portion of such a target.
  • Sputtering targets typically take one of two forms - planar or rotatable.
  • Planar targets tend to be relatively large, rectangular plates of the target material. Such plates are commonly physically attached to a conductive backing, which usually includes electrical connections for connecting the backing to a power supply. These backings may also include a cooling system and a magnet used to generate a magnetic field to hold the sputtering plasma in a predefined area, referred to as magnetron sputtering.
  • Such planar targets are well known in the art and need not be discussed in detail here.
  • Rotatable targets are gaining increased acceptance in the commercial application of low emissivity films and the like.
  • Rotatable targets typically take the form idealized in Figures 1 and 2.
  • the rotatable target 10 generally includes a conductive backing 20, which typically is formed of a stiff metal tube, e.g., a tube of stainless steel.
  • a conductive backing 20 typically is formed of a stiff metal tube, e.g., a tube of stainless steel.
  • the use of such a tubular backing permits a magnet to be positioned within the interior of the target, permitting the shape of the charged plasma adjacent the surface of the target to be more carefully controlled.
  • An outer layer 30 of a sputterable material will be carried by this backing 20.
  • the outer layer 30 may extend laterally from one end of the tube to the other. More commonly though, a short length of the backing 20 extends laterally beyond the edges of the outer layer to enable the target to be mounted in a bay of a sputtering chamber.
  • the sputtering chamber is provided with pairs of opposed end blocks, with one end block being used to hold each of the exposed lateral extensions 22 of the backing.
  • Such rotatable targets 10 are also well known in the art.
  • the target 10 is shown as having a backing 20 and an outer layer 30 extending radially outwardly beyond an exterior surface of the backing. If so desired, the outer layer 30 may be applied directly to the backing.
  • a relatively thin bonding layer 40 is positioned between the backing and the outer 30 of sputterable material.
  • the bonding layer helps insure that the outer layer is securely adhered to the backing.
  • the bonding layer should be conductive and ideally has a coefficient of thermal expansion between that of the backing and the sputterable material. In one preferred embodiment of the present invention, this bonding layer comprises nickel with up about 5% aluminum.
  • the sputterable material 30 comprises a mixture of zinc and a second metal having a melting point less than that of the zinc.
  • Zinc has a melting point of about 420°C. It is preferred that the second metal have a melting point below about 400°C, but be solid at room temperature. Ideally, the second metal remains solid during all temperatures the target would encounter during ordinary operation so the second metal does not melt and physically drip from the target. It is preferred that the metal have a melting point of at least about 100°C, and more preferably 125°C or more.
  • the second metal may be either a single element or may comprise an alloy or admixture of two or more metals. The melting point of the alloy or each component of the admixture desirably has a melting point less than that of zinc, optimally having a melting point falling in the range of about 100-400°C.
  • the optical properties of the layer deposited using the second metal should also be taken into consideration.
  • a target of the invention utilizing zinc as the first metal will be sputtered in a reactive atmosphere of oxygen and/or nitrogen to deposit a layer of zinc oxide, zinc nitride or zinc oxynitride, as the case may be.
  • the reaction product of the second metal has an index of refraction approximating that of the index of refraction of the reaction product from the zinc in the sputterable material.
  • zinc oxide has an index of refraction of about 2.02.
  • metals commonly utilized in forming thin optical films which have a melting point less than that of zinc and which form oxides having an index of refraction around 2.0 - tin has a melting point of about 232°C and tin oxide has an index of refraction of about 2.05; bismuth has a melting point of about 271 °C and bismuth oxide (typically Bi 2 ⁇ 3 ) has an index of refraction closer to about 2.1 ; and indium has a melting point of about 157°C and indium oxide typically has an index of refraction of about 2.03.
  • the second metal used in the outer layer 30 of the target 10 comprises tin, bismuth, indium or alloys or admixtures of tin, bismuth, and/or indium.
  • the second metal of the target comprises bismuth or an alloy or admixture thereof. If so desired, the second metal may consist essentially of bismuth or of tin. The relative proportions of the zinc in the second metal can be varied as desired.
  • the zinc content of the sputterable material be maintained relatively high to gain the sputtering advantages of zinc, but the second metal should be present in an amount efficacious to greatly limit, and ideally substantially eliminate, the tendency of the zinc to create "fireflies" during sputtering.
  • the sputterable material of the outer layer 30 of the target comprise no less than 80 wt. % Zn and no less than 5% of the second metal and may preferably comprise no less than 91 wt. % Zn.
  • the sputterable material comprises 80-95 wt. % Zn and 5-20 wt. % of the second metal.
  • One target which has been found to work well comprises about 87.5% Zn and about 12.5% bismuth and it is believed that a target comprising about 94% zinc and about 6% bismuth may yield even better results.
  • the second metal used in the present target may itself be an alloy, it is preferred that the second metal not be alloyed with the zinc of the target. Instead, both the zinc and the second metal are present in the outer layer 30 of sputterable material in metallic form. In particular, it is preferred that the second metal be located in discrete volumes scattered relatively uniformly throughout the outer layer 30. The relative volume taken up by the second metal in the outer layer will depend in part on the relative amounts of zinc in the second metal used in forming the target. As it is anticipated that zinc will comprise at least about 80 wt. % of the sputterable material, zinc will comprise the majority of that material. Accordingly, the discrete volumes of the second metal may be thought of as being arranged in a matrix of the predominant component of the sputterable material, i.e., zinc.
  • the metal or metals of which the target is made are melted or poured into a mold or the like to cast the target. If a multi-component target is being made, the metals of the target will tend to form an alloy, at least to the extent that the metals are soluble in one another.
  • U.S. Patent 4, 610,771 suggests the use of an alloy of zinc and tin as a target. In such an alloy, the zinc and tin would not tend to form discrete volumes of tin in a zinc matrix.
  • the present invention provides a method of making a target which utilizes plasma spraying. While the ensuing discussion refers to
  • Figures 1 and 2 for purposes of illustrating the process, it is to be understood that the process need not be limited to the structures illustrated in these drawings or to the precise description thereof set forth above.
  • the target made in accordance with this method may take the form of a planar target rather than the rotary target shown in Figure 1.
  • a backing 20 of a desired size and shape is provided.
  • the exterior surface of the backing can be prepared to ensure good bonding of the sputterable material thereto.
  • the external surface of the backing can be roughened by physically scoring or abrading the surface with a grinding tool or by sandblasting the surface.
  • the bonding layer(s) are desirably formed of a conductive material having a coefficient of thermal expansion between that of the backing 20 and the sputterable material of the outer layer 30. Such bonding layers may be used in lieu of roughening the surface of the backing or in conjunction therewith.
  • the outer layer can be applied by plasma spraying the outer layer 30 onto the backing.
  • the material to be sprayed is delivered to a stream of a high-temperature plasma gas which will very rapidly melt the material and spray the molten material toward the backing.
  • the gas used in generating the plasma is desirably either inert (e.g., argon) or reducing (e.g., argon with hydrogen).
  • inert e.g., argon
  • reducing e.g., argon with hydrogen
  • the first metal and the second metal may also be plasma sprayed using water plasma spraying.
  • water plasma spraying a smooth tubular stream of water is produced using a high pressure water source.
  • the plasma is established within the confines of this water stream and the water serves to confine the plasma therewithin. This focuses the plasma energy and can facilitate faster plasma spraying rates.
  • the backing 20 is rotated about its axis in front a stationary plasma spray nozzle. It is also anticipated that the target will be cooled, e.g., via circulating water through the backing, to quickly quench the molten metal droplets being plasma sprayed and to protect the backing from overheating.
  • the first and second metals can be delivered to the plasma for spraying in any suitable fashion. Most commonly, the metals will be provided either from separate wire stock or as finely divided powders. If separate wire stock is used, the plasma will rapidly melt the length of wire fed into the plasma and spray individual droplets blown from the end of the wire toward the backing. If finely divided powders are used, each of the first and second metals may be separately delivered to the plasma stream from separate nozzles. The individual particles of the powders will tend to melt then crystallize relatively independently upon striking the cooled target.
  • the powders may be mixed together and delivered to the plasma as one powder stream, with individual droplets crystallizing relatively independently to yield a sputterable material exhibiting discrete volumes of the second metal in a matrix of the first metal.
  • one of the materials e.g., zinc
  • the other material may be supplied as a metal wire (e.g., a wire formed of tin, bismuth, indium or an alloy thereof).
  • the second metal is provided as an admixture of tin, bismuth or indium with another metal (as opposed to an alloy thereof), this may be accomplished either by using a mixed metal powder of the desired composition, by feeding separate wires at the desired rate, or some combination thereof.
  • the second metal Using such an admixture as the second metal likely will result in separate discrete volumes of each component of the admixture being incorporated in the target.
  • the second metal is an admixture of tin and indium
  • one discrete volume in the zinc matrix may consist essentially of tin while an adjacent discrete volume may consist essentially of indium.
  • the composition of the sputterable material can be controlled by appropriately controlling the raw material fed to the plasma spraying apparatus. For example, if separate zinc and bismuth wires of known diameter were used as raw materials, the linear rate at which each wire is fed into the plasma can be controlled to yield a sputterable material of 80-95 wt. % Zn and 5-20% Bi.
  • the present invention also contemplates a method of depositing a film on a substrate.
  • This method employs a target comprising a backing and an outer layer of a sputterable material carried by the backing, the sputterable material comprising a mixture of zinc and a second metal having a melting point less than that of the zinc.
  • the zinc and the second metal optimally are present in the sputterable material in metallic form and arranged as discrete areas of the second metal in a matrix of zinc.
  • the target and a substrate are placed in a sputtering chamber and the target is operatively connected to a power source.
  • a substrate is placed within a coating chamber in facing relation with a target 10.
  • Preferred substrates in accordance with the present invention include glass, ceramics and plastics which are not detrimentally affected by the operating conditions of the coating process.
  • the target is sputtered in an inert atmosphere, typically argon.
  • the atmosphere maintained in the sputtering chamber includes oxygen, e.g. 80% Ar / 20% 0 2 , thereby depositing on a surface of the substrate a film comprising oxides of zinc and the second metal. If nitrides of zinc and the second metal were desired, the atmosphere in the sputtering chamber could instead comprise nitrogen (e.g., 80% Ar / 20% N 2 ). As will be readily apparent to one skilled in this field, other reactive gases could be used to deposit other desired materials on the substrate.
  • the target 10 may be used to apply the base layer of a film stack, the target may be sputtered directly onto the glass or other material comprising the substrate. If the coating of the invention is to be a later layer in a multiple- layer film stack, though, the substrate positioned below the target may already includes one or more thin films on the upper surface thereof.
  • a multiple layer film stack may be deposited by sputtering to form a high transmittance, low emissivity coating comprising a first dielectric layer, a reflective metal layer, and a second dielectric layer, with each dielectric layer comprising oxides of zinc and the second metal.
  • at least one other target is provided, with that target comprising the metal to be sputtered to form the reflective metallic layer.
  • a clean glass substrate may be placed in a coating chamber which is evacuated, preferably to less than 10- 4 torr, more preferably less than 2 ⁇ 10- 5 torr.
  • a target 10 of the invention having an outer layer comprising a mixture of zinc and said second metal is provided over the surface of the substrate to be coated.
  • the target 10 is sputtered, reacting with the atmosphere in the chamber to deposit on the glass surface a coating layer comprising oxides of zinc and the second metal.
  • the coating chamber is evacuated (or the substrate may be moved to a second chamber, which is then evacuated) and an inert atmosphere such as pure argon is established at a pressure between about 5 ⁇ 10- 4 and 10- 2 torr.
  • a cathode having a target surface of silver metal is provided over the substrate's dielectric-coated surface.
  • a second layer of the dielectric oxide is deposited on the silver layer under essentially the same conditions used to deposit the first dielectric oxide layer.
  • the target 10 described above optimally includes discrete volumes of the second metal in a matrix of zinc.
  • the outer surface of the target will tend to be sputtered away, exposing the area of the target immediately therebeneath. Sputtering of the target, therefore, consumes said discrete areas of zinc and said second metal. Focusing on a localized area of the target, this sputtering will thereby expose areas of said second metal previously covered by zinc and expose areas of zinc previously covered by said second metal as the target is consumed. Since the discrete volumes of .
  • the second material are optimally distributed relatively evenly throughout the sputterable material, such variances in one localized area of the target surface will be offset by other areas of the target surface sputtering the other component, yielding a fairly consistent, homogenous dielectric coating on the substrate.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Cette invention concerne une cible de pulvérisation pouvant comporter un support conçu pour être relié fonctionnel à une source d"énergie et une couche extérieure de matériau pulvérisable reposant sur le support. Le matériau pulvérisable comprend un mélange de zinc et d"un second métal dont le point de fusion est inférieur à celui du zinc. Le zinc et le second métal sont présents dans le matériau pulvérisable, le second métal se présentant sous formes de volumes séparés dans une matrice en zinc. On peut fabriquer cette cible par projection simultanée par plasma du métal zinc et du second métal sur un support pour créer une couche extérieure de matériau pulvérisable sur le support. Pratiquement, on peut placer la cible et un substrat dans une chambre de pulvérisation, puis appliquer une énergie à la cible tout en maintenant dans la chambre de pulvérisation une atmosphère réactive comprenant de l"oxygène, ce qui permet de déposer un film comprenant des oxydes de zinc et le second métal sur une surface du substrat.
PCT/US2001/029897 2000-09-25 2001-09-25 Cible de pulverisation amelioree; methodes de fabrication et utilisation WO2002027057A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU9304201A AU9304201A (en) 2000-09-25 2001-09-25 Improved sputtering target and methods of making and using same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US23510500P 2000-09-25 2000-09-25
US60/235,105 2000-09-25

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WO2002027057A2 true WO2002027057A2 (fr) 2002-04-04
WO2002027057A3 WO2002027057A3 (fr) 2002-06-20

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6878242B2 (en) 2003-04-08 2005-04-12 Guardian Industries Corp. Segmented sputtering target and method/apparatus for using same
US7118726B2 (en) 2002-12-13 2006-10-10 Clark Manufacturing, Llc Method for making oxide compounds
WO2007002330A1 (fr) 2005-06-22 2007-01-04 Guardian Industries Corp. Cible de pulverisation cathodique a couche de pulverisation lente sous le materiau cible
DE102005020250B4 (de) * 2005-04-28 2007-07-19 W.C. Heraeus Gmbh Sputtertarget
DE102006017455A1 (de) * 2006-04-13 2007-10-25 Applied Materials Gmbh & Co. Kg Rohrkathode
US7842355B2 (en) 2005-11-01 2010-11-30 Applied Materials, Inc. System and method for modulation of power and power related functions of PECVD discharge sources to achieve new film properties
CN111441021A (zh) * 2020-05-25 2020-07-24 先导薄膜材料（广东）有限公司 一种旋转靶的制备方法及其喷涂设备

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DE3318828A1 (de) * 1983-05-24 1984-11-29 Interpane Entwicklungs- und Beratungsgesellschaft mbH & Co. KG, 3471 Lauenförde Verfahren zum aufbonden von targetmaterial auf kathodenbasen zur verwendung bei beschichtungsverfahren mittels kathodenzerstaeubung
WO1992020832A1 (fr) * 1991-05-21 1992-11-26 The Boc Group, Inc. Cible rotative de pulverisation en alliage de zinc
DE19626732A1 (de) * 1996-07-03 1998-01-08 Leybold Materials Gmbh Vorrichtung und Verfahren zum Herstellen und Recyclen von Sputtertargets
WO1999058736A2 (fr) * 1998-05-08 1999-11-18 Ppg Industries Ohio, Inc. Cible de pulverisation constituee d'un alliage zinc-etain
WO2001042522A2 (fr) * 1999-12-03 2001-06-14 N.V. Bekaert S.A. Cible de pulverisation amelioree et procedes de fabrication et d'utilisation

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DE3318828A1 (de) * 1983-05-24 1984-11-29 Interpane Entwicklungs- und Beratungsgesellschaft mbH & Co. KG, 3471 Lauenförde Verfahren zum aufbonden von targetmaterial auf kathodenbasen zur verwendung bei beschichtungsverfahren mittels kathodenzerstaeubung
WO1992020832A1 (fr) * 1991-05-21 1992-11-26 The Boc Group, Inc. Cible rotative de pulverisation en alliage de zinc
DE19626732A1 (de) * 1996-07-03 1998-01-08 Leybold Materials Gmbh Vorrichtung und Verfahren zum Herstellen und Recyclen von Sputtertargets
WO1999058736A2 (fr) * 1998-05-08 1999-11-18 Ppg Industries Ohio, Inc. Cible de pulverisation constituee d'un alliage zinc-etain
WO2001042522A2 (fr) * 1999-12-03 2001-06-14 N.V. Bekaert S.A. Cible de pulverisation amelioree et procedes de fabrication et d'utilisation

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BERGMAN A ET AL: "THE EFFECT OF GRAVITY AND TEMPERATURE GRADIENTS ON PRECIPITATION INIMMISCIBLE ALLOYS" JOURNAL OF MATERIALS SCIENCE, CHAPMAN AND HALL LTD. LONDON, GB, vol. 23, no. 5, 1988, pages 1573-1579, XP000651932 ISSN: 0022-2461 *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7118726B2 (en) 2002-12-13 2006-10-10 Clark Manufacturing, Llc Method for making oxide compounds
US6878242B2 (en) 2003-04-08 2005-04-12 Guardian Industries Corp. Segmented sputtering target and method/apparatus for using same
DE102005020250B4 (de) * 2005-04-28 2007-07-19 W.C. Heraeus Gmbh Sputtertarget
WO2007002330A1 (fr) 2005-06-22 2007-01-04 Guardian Industries Corp. Cible de pulverisation cathodique a couche de pulverisation lente sous le materiau cible
US7842355B2 (en) 2005-11-01 2010-11-30 Applied Materials, Inc. System and method for modulation of power and power related functions of PECVD discharge sources to achieve new film properties
DE102006017455A1 (de) * 2006-04-13 2007-10-25 Applied Materials Gmbh & Co. Kg Rohrkathode
CN111441021A (zh) * 2020-05-25 2020-07-24 先导薄膜材料（广东）有限公司 一种旋转靶的制备方法及其喷涂设备

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AU9304201A (en) 2002-04-08

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