WO2002018284A1 - Procede pour la production d'une ebauche en sio¿2? - Google Patents

Procede pour la production d'une ebauche en sio¿2? Download PDF

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Publication number
WO2002018284A1
WO2002018284A1 PCT/EP2001/010022 EP0110022W WO0218284A1 WO 2002018284 A1 WO2002018284 A1 WO 2002018284A1 EP 0110022 W EP0110022 W EP 0110022W WO 0218284 A1 WO0218284 A1 WO 0218284A1
Authority
WO
WIPO (PCT)
Prior art keywords
burner
offset
blank
carrier
deposition
Prior art date
Application number
PCT/EP2001/010022
Other languages
German (de)
English (en)
Inventor
Klaus Ruppert
Original Assignee
Heraeus Tenevo Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heraeus Tenevo Ag filed Critical Heraeus Tenevo Ag
Publication of WO2002018284A1 publication Critical patent/WO2002018284A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01—Manufacture of glass fibres or filaments
    • C03B37/012—Manufacture of preforms for drawing fibres or filaments
    • C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
    • C03B37/01413—Reactant delivery systems
    • C03B37/0142—Reactant deposition burners
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
    • C03B19/1415—Reactant delivery systems
    • C03B19/1423—Reactant deposition burners
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2207/00—Glass deposition burners
    • C03B2207/60—Relationship between burner and deposit, e.g. position
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2207/00—Glass deposition burners
    • C03B2207/60—Relationship between burner and deposit, e.g. position
    • C03B2207/62—Distance
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2207/00—Glass deposition burners
    • C03B2207/70—Control measures

Definitions

  • the present invention relates to a process for the production of a Si0 2 blank by supplying glass-forming starting material to a deposition burner, from which particles are formed in a burner flame associated with the deposition burner and which is directed towards a carrier rotating about its central axis in a predetermined direction of rotation, and these are deposited on the
  • the cylinder jacket surface of the carrier is deposited in layers to form the Si0 2 blank, in that the at least one deposition burner is moved back and forth between turning points in a predetermined movement sequence along the carrier.
  • the volume fraction of the light-guiding core in the preform is small. Due to the high demands on the optical properties of the core area and thus also on the purity of the glass raw materials used, this requires However, production takes a lot of time and material and therefore represents a significant cost factor in preform production. Homogeneity and efficiency of the deposition play an important role.
  • the invention has for its object to improve the known method with regard to the deposition efficiency and the homogeneity of the Si0 2 blank.
  • the burner flame is directed at the carrier in such a way that its main direction of propagation does not intersect the center axis of the carrier and is shifted relative to the direction of rotation in relation to the center axis of the carrier.
  • the burner flame is not on the
  • the burner flame is characterized in that its main direction of propagation is offset with respect to the center axis of the carrier, with the proviso that the offset against the direction of rotation of the carrier is set to a predetermined value.
  • This offset is kept constant during the deposition process or it is varied in a predetermined manner.
  • an offset of the burner flame with respect to the center axis of the carrier influences essential product properties of the blank, such as the density, the homogeneity of the deposition and in particular also the deposition rate.
  • An offset opposite to the direction of rotation results in a significantly higher separation efficiency. Without being bound by this explanation, this is attributed to the fact that the offset against the direction of rotation results in a longer contact time for the particles formed in the burner flame, during which adhesion to the surface of the blank being formed is made possible.
  • the method according to the invention also improves the axial homogeneity of the blank with regard to its material properties and its optical properties compared to a method in which the burner flame is directed directly onto the center axis of the carrier.
  • the point of impact of the burner flame on the surface of the blank being formed is decisive for the stability of the deposition process and the material homogeneity of the blank. Because the point of impact of the burner flame has a significant influence on the temperature distribution over the blank surface. The temperature distribution in turn affects the
  • Material properties of the Si0 2 blank For example, the incorporation of dopants, hydroxyl groups or hydrogen depends on the maximum temperature in the area of the blank surface and the time course of the cooling. The temperature distribution on the blank surface thus influences the radial and axial chemical composition and thus also the optical properties of the blank. The temperature also determines the density distribution.
  • the main direction of propagation of the burner flame and its point of impact on the surface of the rotating blank is decisive.
  • the shape and position of the burner flame can be varied by a variety of measures, for example by gas flows through the separating burner or outside it, by mechanical guide bodies or by applying electrical fields, without the separating burner itself having to be moved for this purpose.
  • Such measures are fundamentally suitable for the positioning of the burner flame and the setting of its main direction of propagation in the sense of the method according to the invention and should be included in the following explanations, even if for the sake of simplicity it is assumed that a burner flame is present in terms of its shape and position during the deposition process is kept constant insofar as a local displacement of the burner flame always goes hand in hand with a corresponding displacement of the deposition burner.
  • the "main direction of propagation" of the burner flame generally coincides with the central axis of the deposition burner.
  • the offset corresponds to the shortest distance between the main direction of propagation and the longitudinal axis of the carrier.
  • the main direction of propagation of the burner flame and the longitudinal axis of the carrier can be perpendicular to one another , or enclose an angle deviating from 90 °. In the latter case, the burner flame is thus tilted in the direction of the longitudinal axis of the carrier.
  • An Si0 2 blank (also simply referred to as a "blank”) is understood here to mean a cylindrical, porous body made of pure Si0 2 or Si0 2 containing dopants.
  • the blank is used to produce preforms for optical fibers or parts thereof.
  • the size of the offset to be set also depends on the outside diameter of the blank being formed. Since this increases continuously during the deposition process, it has proven to be advantageous to keep the offset at a value in the range between 10% and 80% of the outside diameter, preferably between 20% and 40% of the outside diameter of the blank being formed. Depending on the outside diameter of the carrier and the final diameter of the blank, a constant offset can be kept within these preferred ranges. Otherwise, according to a preferred method variant, the offset is increased during the formation of the blank. The offset can be increased continuously or step by step. This ensures that the
  • Offset always lies in the "stable working range" mentioned.
  • the offset is increased, for example, by means of a time-dependent regulation or control or regulation or control based on a control variable which can be detected on the blank being formed, such as the outside diameter, the wall thickness or the weight of the blank being formed.
  • a control variable which can be detected on the blank being formed, such as the outside diameter, the wall thickness or the weight of the blank being formed.
  • the offset in the range between 10% and 80%, preferably between 20% and 40%, of the outside diameter of the blank in turn ensures work in the “stable working range” mentioned above, even with large-volume blanks.
  • the change in the offset can be achieved by lateral displacement of the deposition burner or by tilting the deposition burner against the longitudinal axis of the support and a concomitant change in the main direction of propagation of the burner flame.
  • the distance between the deposition burner and the surface of the SiO 2 blank being formed is kept constant.
  • the distance between the deposition burner and the blank surface has a significant influence on the Surface temperature. This in turn affects the density of the blank being formed and the separation efficiency.
  • a constant distance during the deposition process makes it easier to maintain and adjust the radially homogeneous material properties of the Si0 2 blank.
  • a regulation can be provided to keep the distance constant, which is combined with the above-mentioned regulation or control of the offset between the burner flame and the center axis of the carrier.
  • the direction of movement of the deposition burner expediently runs perpendicular to the direction of movement when the offset is set.
  • the main direction of propagation is perpendicular to the central axis of the carrier.
  • the burner flame or its direction of propagation is particularly easy to align and regulate.
  • the deposition burner prefferably be arranged below the center axis of the carrier.
  • the burner flame is directed upwards, preferably vertically upwards.
  • the flow supported by the thermals contributes to a high separation rate.
  • a plurality of deposition burners which are arranged along the center axis of the carrier and are coupled to one another are expediently used to form the SiO 2 blank.
  • the deposition burners are mechanically or electrically coupled so that they perform the same oscillating sequence of movements between turning points along the blank being formed.
  • Two turning points of the burner movement can be provided in the area of the front ends of the blank being formed, the separating burner being moved essentially over the entire length of the blank.
  • the deposition burner is oscillated between several turning points distributed over the length of the blank.
  • the separation burners can have the same offset.
  • a method has proven particularly useful in which the deposition burners are alternately arranged in at least a first row with a first offset and a second row with a second offset, as seen along the center axis of the carrier, the first offset and the second offset differing from one another.
  • the deposition burners are arranged in a zigzag pattern along the central axis of the carrier.
  • the process according to the invention is particularly suitable for the production of SiO 2 blanks by external deposition using the so-called OVD process (Outside Vapor Deposition).
  • OVD process Outside Vapor Deposition
  • FIG. 1 an arrangement of separating burner and carrier when carrying out the method according to the invention in a view in the direction of the carrier
  • FIG. 2 shows a zigzag arrangement of a plurality of deposition burners along a carrier when carrying out the method according to the invention in a view in the direction of the longitudinal axis of the carrier
  • Figure 3 a diagram of the performance and separation efficiency depending on the lateral offset of the separation burner
  • Figure 4 a diagram of Ge0 2 dopant concentration and relative soot density as a function of the lateral offset.
  • FIG. 1 shows a carrier tube 1 made of aluminum oxide, which rotates about its longitudinal axis 2.
  • the direction of rotation of the carrier tube 1 is indicated by the direction arrow 3.
  • a flame hydrolysis burner 4 made of quartz glass with a vertically oriented central axis, Si0 2 and Ge0 2 particles are deposited in layers on the carrier tube 1 to form a porous blank 5 doped with Ge0, the flame hydrolysis burner 4 oscillating between the ends along the longitudinal axis 2 of the carrier of the forming blank 5 is moved back and forth.
  • the glass base materials and fuels are fed to the flame hydrolysis burner 4, as is shown schematically by the directional arrows 6, converted in a burner flame 7 to the SiO 2 and GeO 2 particles.
  • the burner flame 7 is directed at the carrier 1 and the blank 5 already formed thereon.
  • the main direction of propagation of the burner flame 7 runs coaxially to the central axis of the separating burner 4. Its extension via the point of impact 9 on the surface
  • the main direction of propagation 8 thus also runs vertically and at the same time perpendicularly to the longitudinal axis 2 of the carrier.
  • the separating burner 4 is oriented such that the main direction of propagation 8 of the burner flame 7 is laterally offset with respect to the longitudinal axis 2 of the carrier and counter to the direction of rotation 3. The offset
  • 11 corresponds to the shortest distance between the main direction of propagation 8 (dotted line 8) and the longitudinal axis 2 of the carrier.
  • the separating burner 4 can be moved back and forth in the direction of the directional arrow 12.
  • the separating burner 4 can also be moved in the vertical direction in the direction of the arrow 13, so that the distance between the separating burner 4 or the burner flame 7 and the surface of the blank 5 can be kept at a predetermined value.
  • glass source materials in the form of GeCI 4 , SiCI 4 , oxygen and fuel gases are fed to the flame hydrolysis burner 4 (directional arrows 6) and 7 Si0 2 and Ge0 2 particles are formed therefrom in the burner flame , and these are deposited on the surface 10 of the blank rotating about the longitudinal axis 2 by means of a conventional soot external deposition method (OVD method).
  • ODD method soot external deposition method
  • An aluminum oxide tube with a diameter of 5 mm is used as the carrier tube 1.
  • the flame hydrolysis burner 4 is continuously moved back and forth along the longitudinal axis 2 in a predetermined movement sequence between two fixed turning points during the deposition, one SiO 2 layer after the other being deposited on the carrier 1 or on the surface 10 of the blank 5 which is being formed becomes.
  • An essential characteristic of the method according to the invention is that the burner flame 7 strikes the surface 10 of the blank 5 laterally offset from the central axis 2, the offset 11 being kept at a value which is 50 by means of a control (not shown in FIG. 1) % corresponds to the wall thickness of the blank 5 being formed.
  • the flame hydrolysis burner 4 is displaced further outward in the direction of the directional arrow 12 with increasing thickness of the blank 5 that is being formed.
  • FIG. 2 schematically shows an arrangement of a plurality of flame hydrolysis burners along the longitudinal axis 2 of the carrier tube 1. If the same reference numerals as in FIG. 1 are used in FIG. 2, the same or equivalent components or functions of the arrangement are referred to as those described above with reference to these reference numerals are explained.
  • a plurality of flame hydrolysis burners (4, 14) are used in the arrangement according to FIG. 2, which oscillate back and forth along the support tube 1 rotating about its longitudinal axis 2 between fixed turning points (not shown in FIG. 1) be moved.
  • the flame hydrolysis burners (4, 14) are alternately arranged in an upper and a lower row, the upper row of the flame hydrolysis burner being represented by the flame hydrolysis burner 4 and the lower row of the flame hydrolysis burner being represented by the flame hydrolysis burner 14.
  • the flame hydrolysis burners of the upper row are mounted on a common burner block (not shown in the figure), which - as by the
  • Directional arrows 12 and 13 shown - is movable. This applies equally to flame hydrolysis burners in the lower row.
  • the burner blocks of the upper and lower rows are connected by means of a common control, by means of which the movement of the respective flame hydrolysis burner can be synchronized.
  • the flame hydrolysis burner 4 (and thus all flame hydrolysis burners in the upper row) is directed onto the carrier tube 1 in such a way that its burner flame 7 runs with a main direction of propagation 8 which runs obliquely to the vertical and with an offset 15 to the central axis 2 of the carrier tube 1.
  • the main direction of propagation 8 thus runs obliquely and simultaneously perpendicular to the longitudinal axis 2 of the carrier.
  • the flame hydrolysis burner 4 is oriented such that the main direction of propagation 8 of the burner flame 7 is laterally offset with respect to the longitudinal axis 2 of the carrier and counter to the direction of rotation 3.
  • the offset 15 corresponds to the shortest distance between the main direction of propagation 8 (dotted line 8) and the longitudinal axis 2 of the carrier.
  • the flame hydrolysis burner 14 (and thus all separating burners in the upper row) is directed towards the carrier tube 1 in such a way that its burner flame 7 has a main direction of propagation (symbolized by the dashed line 16) which runs perpendicular to the central axis 2 of the carrier tube 1 and cuts it.
  • the flame hydrolysis burner 14 is thus oriented such that the
  • the main direction of propagation 16 of the burner flame 7 has no offset with respect to the longitudinal axis 2 of the carrier.
  • the distance between the points of impact (9; 19) of the respective burner flames 7 on the surface of the blank 5 is greater compared to a linear arrangement of the flame hydrolysis burners, so that the flame hydrolysis burners (4; 14) have little influence on one another. This increases the efficiency of the deposition compared to a linear burner arrangement.
  • the flame hydrolysis burner 4 is continuously moved back and forth along the longitudinal axis 2 in a predetermined movement sequence between two fixed turning points during the deposition, one SiO 2 layer after the other being deposited on the carrier 1 or on the surface 10 of the blank 5 which is being formed becomes.
  • An essential characteristic of the method according to the invention is that the burner flame 7 is laterally offset from the central axis 2 on the surface 10 of the blank 5 strikes, the offset 11 being kept to a value on the basis of a control (not shown in FIG. 1) which corresponds to 50% of the wall thickness of the blank 5 being formed.
  • the flame hydrolysis burner 4 is displaced further outward in the direction of the directional arrow 12 with increasing thickness of the blank 5 that is being formed.
  • the lateral offset “V” of the flame hydrolysis burner 4 is plotted in millimeters on the x-axis in FIG. 3.
  • the negative sign symbolizes an offset “V” against the direction of rotation 3.
  • the build-up power “A” in g is on the y-axis / h and on the other hand the efficiency “E” of the deposition in%. It can be seen from the illustration in FIG. 3 that both the build-up power “A” (curve 20) and the efficiency “E” (curve 21) initially increase significantly as the offset “V” increases, a maximum at an offset “V "of approx. 2 mm and then fall off again.
  • the lateral offset “V” is also plotted in millimeters on the x-axis and the mean germanium dioxide content “C” of the blank 5 in% by weight on the y-axis. It can be seen from this that the germanium dioxide content “C” increases significantly with increasing lateral offset “V” up to a maximum at approximately -3 mm (curve 30). An optimal, stable working range results with regard to the germanium dioxide content “C” with an offset “V” in the range of approximately -1 mm and approximately - 4 mm.
  • the average relative density “d” in FIG. 4 is dependent on the lateral offset “V” plotted, it being evident that the density “d” decreases approximately linearly with increasing offset “V” (curve 31).

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Manufacture, Treatment Of Glass Fibers (AREA)
  • Glass Melting And Manufacturing (AREA)

Abstract

L'invention concerne un procédé connu pour la production d'une ébauche en SiO2, selon lequel un matériau de départ vitrifiant est amené à au moins un brûleur de dépôt, des particules en sont formées dans une flamme de brûleur qui est affectée au brûleur de dépôt et qui est dirigée vers un support tournant autour de son axe médian dans un sens de rotation prédéfini et ces particules sont déposées par couches sur la surface du corps de cylindre du support en formant l'ébauche en SiO2, le brûleur de dépôt effectuant un mouvement de va-et-vient selon une séquence de mouvement prédéfinie le long du support entre des points de retour. L'invention vise à améliorer le procédé connu en ce qui concerne l'efficacité du dépôt et l'homogénéité de l'ébauche en SiO2. A cet effet, la flamme de brûleur (7) est dirigée sur le support (1) de sorte que son sens de propagation principal (8) ne coupe pas l'axe médian (2) du support et soit décalé par rapport à l'axe médian (2) du support d'un décalage prédéfini (11) à l'encontre du sens de rotation (3).
PCT/EP2001/010022 2000-09-01 2001-08-30 Procede pour la production d'une ebauche en sio¿2? WO2002018284A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10043031.7 2000-09-01
DE2000143031 DE10043031C2 (de) 2000-09-01 2000-09-01 Verfahren zur Herstellung eines Grünkörpers

Publications (1)

Publication Number Publication Date
WO2002018284A1 true WO2002018284A1 (fr) 2002-03-07

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PCT/EP2001/010022 WO2002018284A1 (fr) 2000-09-01 2001-08-30 Procede pour la production d'une ebauche en sio¿2?

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WO (1) WO2002018284A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10158439C2 (de) * 2001-11-29 2003-10-30 Heraeus Tenevo Ag Verfahren zur Herstellung eines Rohlings aus Quarzglas
JP4926164B2 (ja) * 2008-12-26 2012-05-09 信越化学工業株式会社 高周波誘導熱プラズマトーチを用いた光ファイバプリフォームの製造方法及び装置

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JPS59121128A (ja) * 1982-12-27 1984-07-13 Hitachi Cable Ltd 光フアイバ母材の製造法
JPS61236627A (ja) * 1985-04-10 1986-10-21 Furukawa Electric Co Ltd:The ガラス微粒子の堆積方法
US4735644A (en) * 1984-09-18 1988-04-05 Siemens Aktiengesellschaft Method for manufacturing glass optical fiber preforms
JPH0393642A (ja) * 1989-09-04 1991-04-18 Fujikura Ltd 光ファイバ用多孔質ガラス母材の製造方法
JPH03141133A (ja) * 1989-10-25 1991-06-17 Fujikura Ltd 光ファイバ用多孔質ガラス母材の製造方法
DE4203287A1 (de) * 1992-02-03 1993-08-05 Bql Burgauer Quarzglasschmelze Verfahren und vorrichtung zur herstellung einer optischen vorform aus siliziumdioxid
JPH08325029A (ja) * 1995-05-26 1996-12-10 Shin Etsu Chem Co Ltd 光ファイバ用多孔質ガラス母材の製造方法

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Publication number Priority date Publication date Assignee Title
US4784465A (en) * 1982-07-26 1988-11-15 Corning Glass Works Method of making glass optical fiber
JP3053320B2 (ja) * 1993-08-26 2000-06-19 信越化学工業株式会社 光ファイバ用多孔質ガラス母材の製造方法
DE19827945C1 (de) * 1998-06-25 1999-06-24 Heraeus Quarzglas Verfahren und Vorrichtung für die Herstellung einer porösen SiO¶2¶-Vorform

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Publication number Priority date Publication date Assignee Title
JPS59121128A (ja) * 1982-12-27 1984-07-13 Hitachi Cable Ltd 光フアイバ母材の製造法
US4735644A (en) * 1984-09-18 1988-04-05 Siemens Aktiengesellschaft Method for manufacturing glass optical fiber preforms
JPS61236627A (ja) * 1985-04-10 1986-10-21 Furukawa Electric Co Ltd:The ガラス微粒子の堆積方法
JPH0393642A (ja) * 1989-09-04 1991-04-18 Fujikura Ltd 光ファイバ用多孔質ガラス母材の製造方法
JPH03141133A (ja) * 1989-10-25 1991-06-17 Fujikura Ltd 光ファイバ用多孔質ガラス母材の製造方法
DE4203287A1 (de) * 1992-02-03 1993-08-05 Bql Burgauer Quarzglasschmelze Verfahren und vorrichtung zur herstellung einer optischen vorform aus siliziumdioxid
JPH08325029A (ja) * 1995-05-26 1996-12-10 Shin Etsu Chem Co Ltd 光ファイバ用多孔質ガラス母材の製造方法

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PATENT ABSTRACTS OF JAPAN vol. 1997, no. 04 30 April 1997 (1997-04-30) *
PATENT ABSTRACTS OF JAPAN vol. 8, no. 241 6 November 1984 (1984-11-06) *

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Publication number Publication date
DE10043031A1 (de) 2002-03-28
DE10043031C2 (de) 2002-10-31

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