WO2001026141A3 - Structure superficielle et procede de fabrication correspondant, et fixation de plaquette electrostatique incorporant une structure superficielle - Google Patents
Structure superficielle et procede de fabrication correspondant, et fixation de plaquette electrostatique incorporant une structure superficielle Download PDFInfo
- Publication number
- WO2001026141A3 WO2001026141A3 PCT/US2000/026910 US0026910W WO0126141A3 WO 2001026141 A3 WO2001026141 A3 WO 2001026141A3 US 0026910 W US0026910 W US 0026910W WO 0126141 A3 WO0126141 A3 WO 0126141A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- surface structure
- flexible layer
- coating
- workpiece
- ripples
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000011248 coating agent Substances 0.000 abstract 4
- 238000000576 coating method Methods 0.000 abstract 4
- 238000011109 contamination Methods 0.000 abstract 1
- 239000000112 cooling gas Substances 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020027004166A KR20020041448A (ko) | 1999-10-01 | 2000-09-29 | 표면 구조 및 그 제조 방법, 및 표면 구조가 결합된 정전웨이퍼 클램프 |
EP00968508A EP1224687A2 (fr) | 1999-10-01 | 2000-09-29 | Structure superficielle et procede de fabrication correspondant, et fixation de plaquette electrostatique incorporant une structure superficielle |
JP2001529010A JP4854056B2 (ja) | 1999-10-01 | 2000-09-29 | 冷却装置及びクランピング装置 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15739899P | 1999-10-01 | 1999-10-01 | |
US60/157,398 | 1999-10-01 | ||
US23303900P | 2000-09-15 | 2000-09-15 | |
US60/233,039 | 2000-09-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2001026141A2 WO2001026141A2 (fr) | 2001-04-12 |
WO2001026141A3 true WO2001026141A3 (fr) | 2001-10-25 |
Family
ID=26854095
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2000/026910 WO2001026141A2 (fr) | 1999-10-01 | 2000-09-29 | Structure superficielle et procede de fabrication correspondant, et fixation de plaquette electrostatique incorporant une structure superficielle |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1224687A2 (fr) |
JP (1) | JP4854056B2 (fr) |
KR (1) | KR20020041448A (fr) |
TW (1) | TW466560B (fr) |
WO (1) | WO2001026141A2 (fr) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6593699B2 (en) * | 2001-11-07 | 2003-07-15 | Axcelis Technologies, Inc. | Method for molding a polymer surface that reduces particle generation and surface adhesion forces while maintaining a high heat transfer coefficient |
US20040066601A1 (en) * | 2002-10-04 | 2004-04-08 | Varian Semiconductor Equipment Associates, Inc. | Electrode configuration for retaining cooling gas on electrostatic wafer clamp |
WO2007013619A1 (fr) * | 2005-07-28 | 2007-02-01 | Kyocera Corporation | Support d’échantillons, appareil d’aspiration d’échantillons utilisant ledit support et procédé de traitement d’échantillons utilisant ledit appareil |
US8023247B2 (en) * | 2008-12-10 | 2011-09-20 | Axcelis Technologies, Inc. | Electrostatic chuck with compliant coat |
JP2014027207A (ja) * | 2012-07-30 | 2014-02-06 | Hitachi Chemical Co Ltd | 誘電体及びこの誘電体を用いた静電チャック |
US20200381271A1 (en) * | 2019-05-28 | 2020-12-03 | Applied Materials, Inc. | System and apparatus for enhanced substrate heating and rapid substrate cooling |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0323902A2 (fr) * | 1988-01-07 | 1989-07-12 | Varian Associates, Inc. | Dispositif de transfert thermique avec une plaquette semi-conductrice dans le vide |
US5583736A (en) * | 1994-11-17 | 1996-12-10 | The United States Of America As Represented By The Department Of Energy | Micromachined silicon electrostatic chuck |
US5777838A (en) * | 1995-12-19 | 1998-07-07 | Fujitsu Limited | Electrostatic chuck and method of attracting wafer |
US5812362A (en) * | 1996-06-14 | 1998-09-22 | Applied Materials, Inc. | Method and apparatus for the use of diamond films as dielectric coatings on electrostatic chucks |
US5822171A (en) * | 1994-02-22 | 1998-10-13 | Applied Materials, Inc. | Electrostatic chuck with improved erosion resistance |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5582771A (en) * | 1978-12-20 | 1980-06-21 | Toshiba Corp | Ion implanting device |
US4457359A (en) * | 1982-05-25 | 1984-07-03 | Varian Associates, Inc. | Apparatus for gas-assisted, solid-to-solid thermal transfer with a semiconductor wafer |
US4583012A (en) * | 1983-10-20 | 1986-04-15 | General Instrument Corporation | Logical circuit array |
JPS60103829U (ja) * | 1983-12-20 | 1985-07-15 | 日新電機株式会社 | 熱伝導性弾性シ−ト |
JPS61197500A (ja) * | 1985-02-27 | 1986-09-01 | Ulvac Corp | 基板の冷却装置 |
JPS6276146A (ja) * | 1985-09-27 | 1987-04-08 | Nissin Electric Co Ltd | イオン処理装置用熱伝導体 |
KR970008322B1 (en) * | 1988-01-07 | 1997-05-23 | Varian Associates | Method and apparatus fro thermal transfer with a semiconductor wafer in vacuum |
JPH0755423B2 (ja) * | 1991-03-29 | 1995-06-14 | 日本碍子株式会社 | ウエハー保持具の製造方法 |
JPH0633236A (ja) * | 1992-07-14 | 1994-02-08 | Nissin Electric Co Ltd | 基体保持装置 |
JP3021264B2 (ja) * | 1993-12-13 | 2000-03-15 | アネルバ株式会社 | 基板加熱・冷却機構 |
EP0668608A1 (fr) * | 1994-02-22 | 1995-08-23 | Applied Materials, Inc. | Porte-substrat électrostatique avec une connexion d'électrode résistant à l'érosion |
JP4079992B2 (ja) * | 1994-10-17 | 2008-04-23 | バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド | 導電性被処理体を載置部材に締め付けるための装置及び静電クランピング方法 |
JPH09219442A (ja) * | 1996-02-09 | 1997-08-19 | Kobe Steel Ltd | 静電チャックおよびその製造方法 |
JP2817698B2 (ja) * | 1996-03-12 | 1998-10-30 | 日本電気株式会社 | 半導体基板の冷却装置 |
JP3687877B2 (ja) * | 1996-12-18 | 2005-08-24 | 信越化学工業株式会社 | イオン注入機用プラテン |
JPH10335439A (ja) * | 1997-06-04 | 1998-12-18 | Shin Etsu Chem Co Ltd | 静電チャック |
US5903428A (en) * | 1997-09-25 | 1999-05-11 | Applied Materials, Inc. | Hybrid Johnsen-Rahbek electrostatic chuck having highly resistive mesas separating the chuck from a wafer supported thereupon and method of fabricating same |
JP3933289B2 (ja) * | 1998-02-02 | 2007-06-20 | 太平洋セメント株式会社 | 静電チャック |
-
2000
- 2000-09-29 JP JP2001529010A patent/JP4854056B2/ja not_active Expired - Fee Related
- 2000-09-29 WO PCT/US2000/026910 patent/WO2001026141A2/fr not_active Application Discontinuation
- 2000-09-29 EP EP00968508A patent/EP1224687A2/fr not_active Withdrawn
- 2000-09-29 KR KR1020027004166A patent/KR20020041448A/ko not_active Application Discontinuation
- 2000-10-02 TW TW089120456A patent/TW466560B/zh not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0323902A2 (fr) * | 1988-01-07 | 1989-07-12 | Varian Associates, Inc. | Dispositif de transfert thermique avec une plaquette semi-conductrice dans le vide |
US5822171A (en) * | 1994-02-22 | 1998-10-13 | Applied Materials, Inc. | Electrostatic chuck with improved erosion resistance |
US5583736A (en) * | 1994-11-17 | 1996-12-10 | The United States Of America As Represented By The Department Of Energy | Micromachined silicon electrostatic chuck |
US5777838A (en) * | 1995-12-19 | 1998-07-07 | Fujitsu Limited | Electrostatic chuck and method of attracting wafer |
US5812362A (en) * | 1996-06-14 | 1998-09-22 | Applied Materials, Inc. | Method and apparatus for the use of diamond films as dielectric coatings on electrostatic chucks |
Also Published As
Publication number | Publication date |
---|---|
TW466560B (en) | 2001-12-01 |
JP2003511856A (ja) | 2003-03-25 |
KR20020041448A (ko) | 2002-06-01 |
WO2001026141A2 (fr) | 2001-04-12 |
JP4854056B2 (ja) | 2012-01-11 |
EP1224687A2 (fr) | 2002-07-24 |
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