WO2001026141A3 - Structure superficielle et procede de fabrication correspondant, et fixation de plaquette electrostatique incorporant une structure superficielle - Google Patents

Structure superficielle et procede de fabrication correspondant, et fixation de plaquette electrostatique incorporant une structure superficielle Download PDF

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Publication number
WO2001026141A3
WO2001026141A3 PCT/US2000/026910 US0026910W WO0126141A3 WO 2001026141 A3 WO2001026141 A3 WO 2001026141A3 US 0026910 W US0026910 W US 0026910W WO 0126141 A3 WO0126141 A3 WO 0126141A3
Authority
WO
WIPO (PCT)
Prior art keywords
surface structure
flexible layer
coating
workpiece
ripples
Prior art date
Application number
PCT/US2000/026910
Other languages
English (en)
Other versions
WO2001026141A2 (fr
Inventor
Grant Kenji Larsen
Original Assignee
Varian Semiconductor Equipment
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment filed Critical Varian Semiconductor Equipment
Priority to KR1020027004166A priority Critical patent/KR20020041448A/ko
Priority to EP00968508A priority patent/EP1224687A2/fr
Priority to JP2001529010A priority patent/JP4854056B2/ja
Publication of WO2001026141A2 publication Critical patent/WO2001026141A2/fr
Publication of WO2001026141A3 publication Critical patent/WO2001026141A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

Une structure superficielle rentrant en contact avec une pièce à usiner comprend une couche flexible collée à un élément support et un revêtement situé sur le couche flexible. Le revêtement présente des ondulations sur sa surface. La couche flexible peut être conductrice de chaleur. Les ondulations à la surface améliorent le transfert thermique de ladite pièce à usiner et sont caractérisées par une faible génération et une faible contamination particulaires de la pièce à usiner. On peut former les ondulations du revêtement par expansion de la couche flexible, par application du revêtement sur la couche flexible élargie et puis par contraction de la couche flexible. Dans une application, la structure superficielle est utilisée dans une fixation de plaquette électrostatique. La structure superficielle génère un transfert thermique hautement efficace dans un système de traitement sous vide, lorsqu'on l'utilise avec un gaz de refroidissement à basse pression entre la pièce à usiner et la structure superficielle.
PCT/US2000/026910 1999-10-01 2000-09-29 Structure superficielle et procede de fabrication correspondant, et fixation de plaquette electrostatique incorporant une structure superficielle WO2001026141A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020027004166A KR20020041448A (ko) 1999-10-01 2000-09-29 표면 구조 및 그 제조 방법, 및 표면 구조가 결합된 정전웨이퍼 클램프
EP00968508A EP1224687A2 (fr) 1999-10-01 2000-09-29 Structure superficielle et procede de fabrication correspondant, et fixation de plaquette electrostatique incorporant une structure superficielle
JP2001529010A JP4854056B2 (ja) 1999-10-01 2000-09-29 冷却装置及びクランピング装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US15739899P 1999-10-01 1999-10-01
US60/157,398 1999-10-01
US23303900P 2000-09-15 2000-09-15
US60/233,039 2000-09-15

Publications (2)

Publication Number Publication Date
WO2001026141A2 WO2001026141A2 (fr) 2001-04-12
WO2001026141A3 true WO2001026141A3 (fr) 2001-10-25

Family

ID=26854095

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/026910 WO2001026141A2 (fr) 1999-10-01 2000-09-29 Structure superficielle et procede de fabrication correspondant, et fixation de plaquette electrostatique incorporant une structure superficielle

Country Status (5)

Country Link
EP (1) EP1224687A2 (fr)
JP (1) JP4854056B2 (fr)
KR (1) KR20020041448A (fr)
TW (1) TW466560B (fr)
WO (1) WO2001026141A2 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6593699B2 (en) * 2001-11-07 2003-07-15 Axcelis Technologies, Inc. Method for molding a polymer surface that reduces particle generation and surface adhesion forces while maintaining a high heat transfer coefficient
US20040066601A1 (en) * 2002-10-04 2004-04-08 Varian Semiconductor Equipment Associates, Inc. Electrode configuration for retaining cooling gas on electrostatic wafer clamp
WO2007013619A1 (fr) * 2005-07-28 2007-02-01 Kyocera Corporation Support d’échantillons, appareil d’aspiration d’échantillons utilisant ledit support et procédé de traitement d’échantillons utilisant ledit appareil
US8023247B2 (en) * 2008-12-10 2011-09-20 Axcelis Technologies, Inc. Electrostatic chuck with compliant coat
JP2014027207A (ja) * 2012-07-30 2014-02-06 Hitachi Chemical Co Ltd 誘電体及びこの誘電体を用いた静電チャック
US20200381271A1 (en) * 2019-05-28 2020-12-03 Applied Materials, Inc. System and apparatus for enhanced substrate heating and rapid substrate cooling

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0323902A2 (fr) * 1988-01-07 1989-07-12 Varian Associates, Inc. Dispositif de transfert thermique avec une plaquette semi-conductrice dans le vide
US5583736A (en) * 1994-11-17 1996-12-10 The United States Of America As Represented By The Department Of Energy Micromachined silicon electrostatic chuck
US5777838A (en) * 1995-12-19 1998-07-07 Fujitsu Limited Electrostatic chuck and method of attracting wafer
US5812362A (en) * 1996-06-14 1998-09-22 Applied Materials, Inc. Method and apparatus for the use of diamond films as dielectric coatings on electrostatic chucks
US5822171A (en) * 1994-02-22 1998-10-13 Applied Materials, Inc. Electrostatic chuck with improved erosion resistance

Family Cites Families (18)

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Publication number Priority date Publication date Assignee Title
JPS5582771A (en) * 1978-12-20 1980-06-21 Toshiba Corp Ion implanting device
US4457359A (en) * 1982-05-25 1984-07-03 Varian Associates, Inc. Apparatus for gas-assisted, solid-to-solid thermal transfer with a semiconductor wafer
US4583012A (en) * 1983-10-20 1986-04-15 General Instrument Corporation Logical circuit array
JPS60103829U (ja) * 1983-12-20 1985-07-15 日新電機株式会社 熱伝導性弾性シ−ト
JPS61197500A (ja) * 1985-02-27 1986-09-01 Ulvac Corp 基板の冷却装置
JPS6276146A (ja) * 1985-09-27 1987-04-08 Nissin Electric Co Ltd イオン処理装置用熱伝導体
KR970008322B1 (en) * 1988-01-07 1997-05-23 Varian Associates Method and apparatus fro thermal transfer with a semiconductor wafer in vacuum
JPH0755423B2 (ja) * 1991-03-29 1995-06-14 日本碍子株式会社 ウエハー保持具の製造方法
JPH0633236A (ja) * 1992-07-14 1994-02-08 Nissin Electric Co Ltd 基体保持装置
JP3021264B2 (ja) * 1993-12-13 2000-03-15 アネルバ株式会社 基板加熱・冷却機構
EP0668608A1 (fr) * 1994-02-22 1995-08-23 Applied Materials, Inc. Porte-substrat électrostatique avec une connexion d'électrode résistant à l'érosion
JP4079992B2 (ja) * 1994-10-17 2008-04-23 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド 導電性被処理体を載置部材に締め付けるための装置及び静電クランピング方法
JPH09219442A (ja) * 1996-02-09 1997-08-19 Kobe Steel Ltd 静電チャックおよびその製造方法
JP2817698B2 (ja) * 1996-03-12 1998-10-30 日本電気株式会社 半導体基板の冷却装置
JP3687877B2 (ja) * 1996-12-18 2005-08-24 信越化学工業株式会社 イオン注入機用プラテン
JPH10335439A (ja) * 1997-06-04 1998-12-18 Shin Etsu Chem Co Ltd 静電チャック
US5903428A (en) * 1997-09-25 1999-05-11 Applied Materials, Inc. Hybrid Johnsen-Rahbek electrostatic chuck having highly resistive mesas separating the chuck from a wafer supported thereupon and method of fabricating same
JP3933289B2 (ja) * 1998-02-02 2007-06-20 太平洋セメント株式会社 静電チャック

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0323902A2 (fr) * 1988-01-07 1989-07-12 Varian Associates, Inc. Dispositif de transfert thermique avec une plaquette semi-conductrice dans le vide
US5822171A (en) * 1994-02-22 1998-10-13 Applied Materials, Inc. Electrostatic chuck with improved erosion resistance
US5583736A (en) * 1994-11-17 1996-12-10 The United States Of America As Represented By The Department Of Energy Micromachined silicon electrostatic chuck
US5777838A (en) * 1995-12-19 1998-07-07 Fujitsu Limited Electrostatic chuck and method of attracting wafer
US5812362A (en) * 1996-06-14 1998-09-22 Applied Materials, Inc. Method and apparatus for the use of diamond films as dielectric coatings on electrostatic chucks

Also Published As

Publication number Publication date
TW466560B (en) 2001-12-01
JP2003511856A (ja) 2003-03-25
KR20020041448A (ko) 2002-06-01
WO2001026141A2 (fr) 2001-04-12
JP4854056B2 (ja) 2012-01-11
EP1224687A2 (fr) 2002-07-24

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