WO2001004950A1 - Dispositif pour la dissipation thermique de composants semi-conducteurs en cas d'apparition de pointes de charge - Google Patents

Dispositif pour la dissipation thermique de composants semi-conducteurs en cas d'apparition de pointes de charge Download PDF

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Publication number
WO2001004950A1
WO2001004950A1 PCT/DE2000/002074 DE0002074W WO0104950A1 WO 2001004950 A1 WO2001004950 A1 WO 2001004950A1 DE 0002074 W DE0002074 W DE 0002074W WO 0104950 A1 WO0104950 A1 WO 0104950A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor component
heat sink
medium
heat
melting point
Prior art date
Application number
PCT/DE2000/002074
Other languages
German (de)
English (en)
Inventor
Rainer Kreutzer
Robert Jung
Erich Zerbian
Original Assignee
Siemens Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Publication of WO2001004950A1 publication Critical patent/WO2001004950A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/427—Cooling by change of state, e.g. use of heat pipes
    • H01L23/4275—Cooling by change of state, e.g. use of heat pipes by melting or evaporation of solids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the invention relates to a device for heat removal from a semiconductor component, which has a semiconductor component and a first heat sink that is in contact with the semiconductor component.
  • the switching elements used which may be electromechanical or semiconductor components, depending on the operating state.
  • the motor current can exceed the current that flows during rated operation by a multiple.
  • the starting current is about four to twelve times the continuous rated current.
  • the duration of the start-up phase can range from approximately one second to 30 seconds. Further short-term load peaks can also occur during normal operation. These increased current loads lead to increased heat development within the switching elements.
  • the increased current causes the heat peaks in the semiconductor component to be released to an initially cold heat sink, which can be a metal block or a heat sink provided with cooling fins.
  • FIG. 1 shows a device for heat removal from a semiconductor component, which has a semiconductor component 1 and a heat sink 2 which is in contact with it and which is implemented as a metal block.
  • the semiconductor component 1 has a chip housing 1b, in which, for example, a thyristor is contained. Power connections la protrude downward from the chip housing 1b.
  • the rear side of the semiconductor component 1 is formed by a metal plate 1c, which is used for improved heat dissipation from the chip housing 1b to the heat sink 2 contacted with the metal plate 1c.
  • the semiconductor component is fastened to the heat sink 2 by means of a screw, not shown, which is guided through a screw hole 1d in the metal plate 1c.
  • FIG. 2 shows another known device for cooling a semiconductor component. This differs from the device shown in FIG. 1 only in the design of the heat sink used.
  • the one in the fi The heat sink 3 shown in FIG. 2 is provided on its side facing away from the semiconductor component 1 with cooling fins 3a. Because of these cooling fins, the contact area between the heat sink 3 and the surroundings is increased, so that the heat generated in the semiconductor component can be better dissipated to the surroundings.
  • the invention is based on the object of specifying a device for heat removal from a semiconductor component, in which the heat removal is improved when stress peaks occur.
  • the advantages of the invention consist in particular in that the temporarily occurring high heat flow from the semiconductor is initially used to melt a medium with a low melting point, which is in direct or indirect contact with the semiconductor component to be cooled. During this melting process, the temperature of the melt does not rise further, since the heat supplied is initially only used to melt further material areas of the medium mentioned. The amount of heat is converted into heat of fusion. This effect continues until the entire medium has melted. Only then does it rise Temperature continues in the semiconductor element. By this time, which occurs much later than in known devices, the increased heat supply in the semiconductor must be stopped in order to prevent its destruction.
  • 1 shows a first known device for warming a
  • FIG. 3 shows a first embodiment for a device for heat removal from a semiconductor component according to the
  • FIG 4 shows a second embodiment of a device for heat removal from a semiconductor device according to
  • FIG 5 shows a third embodiment for a device for heat removal from a semiconductor device according to
  • FIG. 6 shows a sketch to illustrate the device according to FIG. 5
  • FIG. 7 shows a diagram to illustrate the effect of a
  • FIG. 3 shows a first exemplary embodiment of a
  • the device shown has a semiconductor component 1 to be cooled. This is provided with a chip housing 1b, from the underside of which current connections la are led out.
  • the back of the semiconductor component is formed by a metal plate lc, which for improved heat dissipation from the chip housing lb to the is used with the metal plate lc contacted heat sink 5.
  • the semiconductor component 1 is fastened by means of a screw 4 to the heat sink 5, which consists, for example, of aluminum and forms a metallic housing. In its interior, this has a cavity in which a medium 6 with a low melting point is introduced.
  • the melting point mentioned is preferably in the range from 50 ° C. to 130 ° C.
  • the medium 6 with a low melting point can, for example, be Wood's metal, which has a melting point of 60 ° C, Rose's metal, which has a melting point of 94 ° C, a wax or a salt.
  • the medium 6 with a low melting point can be introduced into the heat sink 5 in the form of plates, rods or balls
  • the side of the heat sink 5 remote from the semiconductor component 1 is contacted with a further heat sink 7, which is provided on its rear side with cooling fins 7a.
  • the semiconductor component 1 is, for example, a thyristor, which is provided as a switching element for switching an electric motor.
  • a thyristor which is provided as a switching element for switching an electric motor.
  • high starting currents occur for a limited period of time, which far exceed the current flowing during the nominal operation of the motor. This leads to heating of the thyristor, which would lead to destruction of the thyristor without suitable countermeasures.
  • the thyristor is de-warmed as follows:
  • the heat generated in the thyristor is passed on via the metal plate 1c to the first heat sink 5, in which the medium 6 with a low melting point is introduced. When the resulting temperature reaches the melting point of the medium, it begins to melt. During this The melting process increases the temperature of the melt and, if the thermal coupling is sufficiently good, that of the semiconductor also no longer increases.
  • the heat supplied only leads to the melting of further material areas, the amount of heat present being converted into heat of fusion. Only when all the material has melted will the temperature continue to rise.
  • the heat generated is fed to the further heat sink 7 via the rear side of the first heat sink 5 and is released to the surroundings via its cooling fins 7a.
  • the main advantage of such a device is that the time until the thermal destruction limit of the semiconductor component 1 is extended. In many applications, the motor starts up before this time has elapsed, so that destruction of the semiconductor component is avoided.
  • the melt cools down, the energy supplied is released again.
  • the heat flow can be dissipated in the direction of the heat sink 7 through surfaces of different sizes for the introduction and dissipation of heat.
  • Figure 4 shows a second embodiment of a
  • the device shown in FIG. 4 differs from the device shown in FIG. 3 only in the configuration of the heat sink 8, which has the medium with a low melting point and is arranged between the semiconductor component 1 and the further heat sink 7.
  • This heat sink 8 is a porous support block, which consists for example of foamed aluminum or sintered material.
  • the medium with a low melting point is introduced into the interstices or pores of this support block, which medium is preferably a wax or a salt in this exemplary embodiment and is in the form of small balls.
  • the basic mode of operation of the device shown in FIG. 4 corresponds to the mode of operation of the device shown in FIG. 3.
  • the period until the thermal destruction limit is reached is extended. In many cases, this means that the start-up phase of the motor or another time-limited load peak has already ended before the semiconductor component has been destroyed.
  • FIG. 5 shows a third exemplary embodiment of a device for dewarming a semiconductor component according to the invention.
  • the device shown in FIG. 5 differs from the device shown in FIG. 3 only in that it has a heat conducting plate 9, which improves the heat transfer between the semiconductor component 1 and the medium 6 with a low melting point.
  • This heat-conducting sheet 9 is in contact with the metal plate forming the back of the semiconductor component and surrounds the semiconductor component 1 on several sides. As a result, the heat transfer area to the medium 6 with a low melting point is increased and improved heat transfer is possible.
  • FIG. 6 shows a sketch to illustrate the device according to FIG. 5, the individual components of the device being shown in a kind of exploded view.
  • FIG. 7 shows a diagram to illustrate the effect of a device according to the invention.
  • time t is on the abscissa and ordinate is on the ordinate the temperature ⁇ plotted.
  • the dotted line running parallel to the abscissa denotes the temperature value ⁇ l, which corresponds to the thermal destruction limit of the semiconductor component.
  • the solid, parabolic curve is assigned to the prior art according to FIG. 1 or FIG. 2. In this case, the heating of the semiconductor component leads to the thermal destruction limit of the semiconductor component being reached after the time t1 has elapsed.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

L'invention concerne un dispositif servant à la dissipation thermique d'un composant semi-conducteur et comprenant un composant semi-conducteur ainsi qu'un premier corps de refroidissement en contact avec le composant semi-conducteur et pourvu d'un milieu à point de fusion bas. Ce milieu fond en cas d'élévation de la température, la fusion n'entraînant pas d'autre élévation de la température. La durée nécessaire pour atteindre la limite de destruction thermique du composant semi-conducteur est ainsi allongée, ce qui est particulièrement avantageux dans la phase de démarrage d'un moteur lorsque le composant semi-conducteur sert d'élément de commande de moteur.
PCT/DE2000/002074 1999-07-12 2000-06-26 Dispositif pour la dissipation thermique de composants semi-conducteurs en cas d'apparition de pointes de charge WO2001004950A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19932441.7 1999-07-12
DE1999132441 DE19932441A1 (de) 1999-07-12 1999-07-12 Vorrichtung zur Entwärmung von Halbleiterbauelementen beim Auftreten von Belastungsspitzen

Publications (1)

Publication Number Publication Date
WO2001004950A1 true WO2001004950A1 (fr) 2001-01-18

Family

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Family Applications (1)

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PCT/DE2000/002074 WO2001004950A1 (fr) 1999-07-12 2000-06-26 Dispositif pour la dissipation thermique de composants semi-conducteurs en cas d'apparition de pointes de charge

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Country Link
DE (1) DE19932441A1 (fr)
WO (1) WO2001004950A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102023126586A1 (de) 2022-09-30 2024-04-04 Bernd WILDPANNER Halbleiter-Bauelement

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DE10112264A1 (de) * 2001-03-14 2002-10-02 Siemens Ag Elektrische Einheit
EP1284503A1 (fr) * 2001-08-13 2003-02-19 Abb Research Ltd. Module semi-conducteur de puissance
DE10250604A1 (de) * 2002-10-30 2004-05-19 Tyco Electronics Amp Gmbh Integriertes Schaltungssystem mit Latentwärmespeichermodul
DE10324156A1 (de) * 2003-05-22 2004-12-16 Siemens Ag Verfahren und Anordnung zum thermischen Schutz elektronischer Einheiten in einem elektronischen Gerät
DE10347518A1 (de) * 2003-10-13 2005-05-25 Siemens Ag Elektronisches Bauelement, Schaltungsträgeraufbau und Elektronikeinheit mit Wärmespeicher
DE102005034546A1 (de) * 2005-07-23 2007-01-25 Conti Temic Microelectronic Gmbh Baugruppe mit Kühlvorrichtung
WO2009027038A1 (fr) * 2007-08-25 2009-03-05 Sew-Eurodrive Gmbh & Co. Kg Appareil électrique, procédé d'exploitation et utilisation correspondants
DE102008004053A1 (de) * 2008-01-11 2009-07-23 Airbus Deutschland Gmbh Spitzenlast-Kühlung von elektronischen Bauteilen durch phasenwechselnde Materialien
DE202008000949U1 (de) * 2008-01-22 2009-03-12 Steca Elektronik Gmbh Aus einer elektronischen Schaltung und einer Kühleinheit bestehende Vorrichtung
DE102010062914A1 (de) * 2010-12-13 2012-06-14 Robert Bosch Gmbh Halbleiter mit einem Verbindungselement zum Aführen von Wärme und Verfahren
US20120206880A1 (en) * 2011-02-14 2012-08-16 Hamilton Sundstrand Corporation Thermal spreader with phase change thermal capacitor for electrical cooling
US9136202B2 (en) * 2012-04-17 2015-09-15 Qualcomm Incorporated Enhanced package thermal management using external and internal capacitive thermal material
DE102013206868A1 (de) * 2013-04-16 2014-05-08 E.G.O. Elektro-Gerätebau GmbH Verfahren zur Kühlung eines Halbleiterbauteils und Vorrichtung
DE102016203125B4 (de) 2016-02-26 2019-03-28 Audi Ag Elektrische Anlage für ein Kraftfahrzeug mit einer elektromechanischen Schalteinrichtung und einer Haltevorrichtung sowie Kraftfahrzeug damit

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US5007478A (en) * 1989-05-26 1991-04-16 University Of Miami Microencapsulated phase change material slurry heat sinks
JPH05218250A (ja) * 1992-02-06 1993-08-27 Mitsubishi Heavy Ind Ltd 熱伝達率可変型放熱器
EP0732743A2 (fr) * 1995-03-17 1996-09-18 Texas Instruments Incorporated Dissipateurs de chaleur
US5831831A (en) * 1997-03-27 1998-11-03 Ford Motor Company Bonding material and phase change material system for heat burst dissipation
JPH11111898A (ja) * 1997-10-06 1999-04-23 Zojirushi Vacuum Bottle Co 半導体素子の冷却装置

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Publication number Priority date Publication date Assignee Title
US5007478A (en) * 1989-05-26 1991-04-16 University Of Miami Microencapsulated phase change material slurry heat sinks
JPH05218250A (ja) * 1992-02-06 1993-08-27 Mitsubishi Heavy Ind Ltd 熱伝達率可変型放熱器
EP0732743A2 (fr) * 1995-03-17 1996-09-18 Texas Instruments Incorporated Dissipateurs de chaleur
US5831831A (en) * 1997-03-27 1998-11-03 Ford Motor Company Bonding material and phase change material system for heat burst dissipation
JPH11111898A (ja) * 1997-10-06 1999-04-23 Zojirushi Vacuum Bottle Co 半導体素子の冷却装置

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Publication number Priority date Publication date Assignee Title
DE102023126586A1 (de) 2022-09-30 2024-04-04 Bernd WILDPANNER Halbleiter-Bauelement

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