WO2001004916A1 - Dispositif ptc - Google Patents

Dispositif ptc Download PDF

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Publication number
WO2001004916A1
WO2001004916A1 PCT/JP2000/004675 JP0004675W WO0104916A1 WO 2001004916 A1 WO2001004916 A1 WO 2001004916A1 JP 0004675 W JP0004675 W JP 0004675W WO 0104916 A1 WO0104916 A1 WO 0104916A1
Authority
WO
WIPO (PCT)
Prior art keywords
plating
plating layer
electroless
ptc element
graphite
Prior art date
Application number
PCT/JP2000/004675
Other languages
English (en)
Japanese (ja)
Inventor
Yoshiaki Echigo
Akira Ito
Nobuyuki Sinohara
Ryouichi Fukumoto
Original Assignee
Unitika Ltd.
Kohan Kogyo Co., Ltd.
Toyo Kohan Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unitika Ltd., Kohan Kogyo Co., Ltd., Toyo Kohan Co., Ltd. filed Critical Unitika Ltd.
Priority to AU60147/00A priority Critical patent/AU6014700A/en
Publication of WO2001004916A1 publication Critical patent/WO2001004916A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
    • H01C1/1406—Terminals or electrodes formed on resistive elements having positive temperature coefficient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H01C7/027—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient consisting of conducting or semi-conducting material dispersed in a non-conductive organic material

Definitions

  • the present invention relates to a PTC (Positive Temperature Coefficient) element. More specifically, the present invention relates to a PTC element provided with an electrode made of a Ni plating layer on a conductive sheet.
  • JP-A-55-78406 As a method for forming an electrode of a PTC element using such a conductive sheet, a method of thermocompression bonding a metal foil-metal mesh electrode (US Pat. No. 4,426,633; (Japanese Patent Publication) and a method of chemical plating or electric plating (Japanese Patent Publication No. Hei 4-440401).
  • a metal thermocompression bonding method or a conventional plating method a PTC element having a sufficiently low specific resistance cannot be obtained stably.
  • An object of the present invention is to obtain a stable PTC element having a sufficiently low specific resistance. Disclosure of the invention
  • the first feature of the PTC element of the present invention is that electrodes made of a Ni plating layer are provided on both sides of a conductive sheet made of a crystalline polymer matrix and a conductive filler, and the specific resistance in 2 is 1.2 ⁇ cm. It is as follows.
  • a second feature of the PTC device of the present invention is that in the device, the electrode is an electroless Ni That is, it is an attached layer.
  • a third feature of the PTC device of the present invention is that, in the device, the electrode is an electrolytic Ni plating layer.
  • a fourth feature of the PTC device of the present invention is that in the device, the electrodes are two Ni plating layers including a lower electroless SNi plating layer and an upper electrolytic Ni plating layer.
  • a fifth feature of the PTC element of the present invention is that the element is an electroless Ni plating layer, and a Ni-P electroless Ni plating layer containing 2% by weight or less of P in a plating film. is there.
  • a sixth feature of the PTC element of the present invention is that in the element, the electroless Ni plating layer is a Ni-B electroless Ni plating layer containing 2% by weight or less of B in a plating film. It is.
  • a seventh feature of the PTC device of the present invention is that, in the device, the electrolytic Ni plating layer is a graphite dispersed electrolytic Ni plating layer in which graphite is dispersed in a plating film.
  • S- An eighth feature of the PTC device of the present invention is that, in the device, the electrode has a thickness of 5 to 4
  • the present inventors have conducted intensive studies to solve the problem, and as a result, as described above, the Ni plating layer is provided on both surfaces of the matrix of the crystalline polymer and the conductive sheet made of the conductive filler.
  • the specific resistance at 20 ° C is 1.2 ⁇ cm or less by reducing the amount of substances derived from reducing agents such as non-conductive P and B contained in the Ni plating film. It has been found that a PTC device having a sufficiently low specific resistance can be obtained stably.
  • the present invention will be described in further detail.
  • the crystalline polymer used in the present invention is not particularly limited, and polyolefins such as polyethylene and polypropylene, vinyl halide and vinylidene polymers Further, these modified substances can be mentioned, but it is preferable to use crystalline polyolefin, particularly high-density polyethylene.
  • the conductive filler include carbon black, graphite, carbon fiber, metal particles such as nickel, copper, and silver, and metal fibers.
  • the mixing ratio of the crystalline polymer and the conductive filler is preferably 20 to 80% by weight of the crystalline polymer and 80 to 20% by weight of the conductive filler, and 30 to 70% by weight of the crystalline polymer.
  • % By weight of conductive filler more preferably 70 to 30% by weight. If the crystalline polymer is less than 20% by weight, the strength of the conductive sheet tends to be weak, and if it exceeds 80% by weight, it is difficult to obtain sufficient conductivity.
  • the mixture is formed into a sheet or film.
  • the surface of the sheet-like or film-like molded body is subjected to mechanical polishing such as sand blasting and etching treatment with Z or a mixed solution of chromic acid and sulfuric acid to form a conductive filler. It is exposed on the surface, and Ni plating is applied thereon to form an electrode I.
  • the Ni plating layer may be formed by using either the electroless plating method or the electrolytic plating method. For electroless plating, hypophosphite, borohydride, hydrazine, etc.
  • P is used when hypophosphite is used, and P is used when boron hydride is used.
  • B is taken into the plating film. Since P and B are non-conductive, when the Ni plating film contains a large amount of P or B, the specific resistance of the film becomes large, and is stable and sufficiently low as the object of the present invention. PTC devices with specific resistance at room temperature cannot be obtained. Therefore, when performing electroless Ni plating using hypophosphite as a reducing agent, the P in the plating film should be 2% by weight or less, and electroless Ni plating using boron hydride as a reducing agent.
  • a graphite-dispersed Ni-plated layer in which graphite is dispersed is formed as the Ni-plated layer to reduce the contact resistance.
  • graphite having excellent conductivity is interspersed, and the electrical contact with the contact terminals is improved, and the contact resistance can be reduced.
  • the graphite dispersed in the plating film either natural graphite or artificial graphite may be used, but it is preferable to use finely ground graphite having a 50% cumulative diameter of 0.10 ⁇ m or less. Further, it is more preferable to use finely ground graphite having a 50% cumulative diameter of 5 ⁇ m or less.
  • graphitized carbon black having an average particle size of about 0.1 ⁇ m may be used.
  • These fine graphites are kneaded with a graphite dispersant such as a surfactant diluted with a certain amount of water, sufficiently dispersed, and then added to the plating solution.
  • the amount of the dispersant is about 0.5 to 10% by weight based on graphite.
  • the degree is IS ". It is preferable to adjust the addition amount of graphite to the plating solution so as to be 1 to 1001.
  • the plating solution in which graphite is dispersed is stored by means such as a pump. It is preferable that the liquid be circulated between the liquid tank and the electrolytic cell, and that the liquid be constantly dispersed by using a stirring means such as stirring by blowing air through pores provided in the lower part of the electrolytic cell. By maintaining the state, graphite can be dispersed in the plating film with a content of 0.1 to 25% by weight of 0. This graphite dispersion can be performed by electroless plating. It is more preferable to manage the plating bath and the amount of dispersion of graphite with easy electroplating.
  • the Ni plating layer may be a two-layer Ni plating layer composed of a lower electroless Ni plating layer and an upper electrolytic Ni plating layer.
  • the electroless plating layer may be formed after the electroless plating layer is formed.
  • the amount of the non-conductive substance such as P or B in the electroless plating is 2% by weight. It is necessary to:
  • the thickness of the Ni plating layer is preferably 5 to 40 ⁇ m, and more preferably 15 to 25 ⁇ . If the thickness of the plating layer is less than 5 m, the withstand voltage when a high voltage is applied is poor, and the Ni plating film is locally peeled off from the conductive sheet, causing swelling or a plating film. May be partially peeled off. On the other hand, "If the thickness of the plating layer exceeds 40 ⁇ m, it is not economically advantageous even if the specific resistance in the object 2 of the present invention is 1.2 ⁇ ⁇ cm or less. Is 40 ⁇ m.
  • the specific resistance at 20 ° C is 1.2 ⁇ ⁇ It is possible to obtain a PTC element of less than cm.
  • High density polyethylene powder (melting point: 1 3 5 ° C, manufactured by Dow Chemical Company) 4 5 the weight 0/0, the spherical Fuweno Ichiru ⁇ a 1 9 0 0 ° C in calcined average particle diameter 1 5 ⁇ ⁇ 55% by weight of granular glass carbon (GCP-30H, manufactured by Unitika) was melt-kneaded in a plastmill at a kneading temperature of 150 ° C. for 10 minutes. The kneaded material was formed into a sheet having a thickness of 0.35 mm by hot pressing. Specimens of 1 O cm in length and 8 cm in width were cut out from the Sitka.
  • test piece was subjected to an etching treatment in a mixed solution of chromic acid and sulfuric acid at 70 ° C, washed with water, and then subjected to a Cata 0 list solution containing palladium chloride and stannous chloride (manufactured by World Metal Corporation: PN — PS) 150 m 1 Z 1 and hydrochloric acid 150 m
  • the compositions of the various Ni plating baths A to E shown in Table 1 are shown below.
  • the plating thickness was adjusted by changing the immersion time or energization time. Also, only electroplating plating When a deposition film was formed, strike plating was performed under the conditions shown in the lower layer of Table 1 and then a plating film was formed under the conditions shown in the upper layer of Table 1.
  • the contents of P and B in the obtained plating film were determined by a fluorescent X-ray method.
  • the plating thickness was determined by weight measurement before and after plating.
  • Nickel sulfate 30 g Sodium succinate: 55 gZS Boric acid: 30 g / Ammonium chloride: 30 gZ Dimethylamine borane 3 g / 1
  • C Electroless plating bath
  • Nickel sulfate 24 0 Nickel chloride 45 g / Boric acid 40 g / ⁇ [ ⁇ : Electrolytic plating bath]
  • Thickness Black (C) Plating bath Bath temperature Current density Plating bath Bath temperature Current density Content
  • each symbol represents the following contents.
  • a withstand voltage test was performed to evaluate the durability of the Ni film as an electrode when a high voltage was applied to the PTC element.
  • the withstand voltage test after applying 50 V, 5 OA to the PTC element and holding it for 10 minutes, observe the change in the Ni film, and if the film swells and peels off, it is defective, and there is a practical problem with the film. Very slight swelling and peeling that did not occur were judged as good, and those with swelling of the film and no peeling were judged as excellent.
  • Table 2 shows the measurement results of the specific resistance and the results of the withstand voltage test.
  • the PTC element obtained by the present invention has an electrode composed of a Ni plating layer on both sides of a conductive sheet composed of a crystalline polymer matrix and a conductive filler, and has a specific resistance of 1.2 ⁇ cm at 20 ° C.
  • the following PTC elements have a low specific resistance and can be suitably used for fuses of electric devices.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemically Coating (AREA)

Abstract

L'invention concerne un dispositif PTC à résistance spécifique suffisamment faible comprenant des électrodes constituées d'un placage de Ni faisant preuve d'une résistance spécifique de 1,2 Φ cm au plus à 20 °C sur les deux côtés d'une feuille conductrice formée d'une matrice polymère cristallin et d'une charge conductrice.
PCT/JP2000/004675 1999-07-13 2000-07-12 Dispositif ptc WO2001004916A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU60147/00A AU6014700A (en) 1999-07-13 2000-07-12 Ptc device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11/199250 1999-07-13
JP19925099 1999-07-13

Publications (1)

Publication Number Publication Date
WO2001004916A1 true WO2001004916A1 (fr) 2001-01-18

Family

ID=16404676

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2000/004675 WO2001004916A1 (fr) 1999-07-13 2000-07-12 Dispositif ptc

Country Status (3)

Country Link
AU (1) AU6014700A (fr)
TW (1) TW574717B (fr)
WO (1) WO2001004916A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140026327A (ko) * 2010-09-29 2014-03-05 유로피안 인텔리전스 비.브이. Ｌｅｄ의 어레이의 본질적으로 안전한 디스플레이 장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0935906A (ja) * 1995-07-21 1997-02-07 Tdk Corp ポリマー系ｐｔｃ素子およびその製造方法
JPH10125504A (ja) * 1996-10-17 1998-05-15 Tdk Corp 有機質正特性サーミスタとその製造方法
JPH1197208A (ja) * 1997-09-24 1999-04-09 Unitika Ltd Ｐｔｃ素子

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0935906A (ja) * 1995-07-21 1997-02-07 Tdk Corp ポリマー系ｐｔｃ素子およびその製造方法
JPH10125504A (ja) * 1996-10-17 1998-05-15 Tdk Corp 有機質正特性サーミスタとその製造方法
JPH1197208A (ja) * 1997-09-24 1999-04-09 Unitika Ltd Ｐｔｃ素子

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140026327A (ko) * 2010-09-29 2014-03-05 유로피안 인텔리전스 비.브이. Ｌｅｄ의 어레이의 본질적으로 안전한 디스플레이 장치
KR101955044B1 (ko) * 2010-09-29 2019-05-31 유로피안 인텔리전스 비.브이. Ｌｅｄ의 어레이의 본질적으로 안전한 디스플레이 장치

Also Published As

Publication number Publication date
TW574717B (en) 2004-02-01
AU6014700A (en) 2001-01-30

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