TW574717B - Positive temperature coefficient (PTC) element - Google Patents

Positive temperature coefficient (PTC) element Download PDF

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Publication number
TW574717B
TW574717B TW89113912A TW89113912A TW574717B TW 574717 B TW574717 B TW 574717B TW 89113912 A TW89113912 A TW 89113912A TW 89113912 A TW89113912 A TW 89113912A TW 574717 B TW574717 B TW 574717B
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Taiwan
Prior art keywords
nickel
plating
layer
ptc
temperature coefficient
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TW89113912A
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Chinese (zh)
Inventor
Yoshiaki Echigo
Akira Itoh
Ryouichi Fukumoto
Nobuyuki Shinohara
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Kohan Kogyo Co Ltd
Toyo Kohan Co Ltd
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Publication of TW574717B publication Critical patent/TW574717B/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C1/00Details
    • H01C1/14Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
    • H01C1/1406Terminals or electrodes formed on resistive elements having positive temperature coefficient
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H01C7/027Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient consisting of conducting or semi-conducting material dispersed in a non-conductive organic material

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemically Coating (AREA)

Description

574717574717

574717 五、發明說明(2) 2 Ω * cmvx下層而成的電極,在2〇 °C之比電阻為i 係以於前述 係以電極為 係以於前述 本發明之申今套奎』丨^ 元件,其中電極C第2項之ptc元件 本發明之申請專利:鑛鎳(Ni)層為特徵 電解鍍鎳⑻)層為=乾圍第3項之PTC元件 本發明之申嗜奎工丨Μ 元件,其中電圍第4項之PTC元件,係以於前述 解鑛鎳⑷)層而成的心;;::K(N1)層及上層之電 元件本;二:"利範圍第5項之m元件,係以於前述 .T ^p\Ni:p^;^Nl } ^ ^ ^ M t t *% 太pm +1 解鍍鎳(N1)層為特徵。 元件專利範圍第6項之PTC元件,係以於前述 ,.Βθ \無電解鍍鎳(H)層為特徵。 元件,"ΐ r :專利範圍第7項之PTC元件,係以於前述 罢t石知鑛錄(Nl)層係於錄著被膜中含有已分散石 墨的石墨分散電解鑛鎳(Νι)層為特徵。 …政石 元件本”利範圍第8項之PTC元件,係以於前述 件,、中電極厚度為5〜40心為特徵。 ^ 登明之實施 由如2:==:二^經精心研究的結[發現藉 由、.口日日〖生水合物之基質及導電性填料而成的 91043-TYKIIU.ptd 第6頁 574717 五、發明說明(3) 導電性板片之兩面上使形成鍍鎳(N i )層作為設置的電極 時,使源自鍍鎳(N 1 )被膜中含有的非導電性之P或B等還原 劑的物質量減少,可得2 0 °C之比電阻在1. 2 Ω · c m以下的 安定且具有足夠低的比電阻之PTC元件。 以下詳細說明本發明。 本發明所用的結晶性聚合物並未予特別限制,可舉出 有聚乙烯、聚丙烯等聚烯烴、鹵化乙烯基或偏二i乙烯聚 合物,再者此等的改質物質,惟以採用結晶性聚烯烴為 宜,採用高密度聚乙烯為尤宜。又至於導電性填料,可舉 出碳黑、石墨、碳纖維及鎳、銅、銀等金屬粒子或金屬纖 維。 結晶性聚合物及導電性填料之混合比,對結晶性聚合 物:2 0〜8 0重量%,宜為導電性填料:8 0〜2 0重量%,對結晶 性聚合物:3 0〜7 0重量%,以導電性填料:7 0〜3 0重量%為較 宜。結晶性聚合物未滿20重量%時,導電性板片之強度有 變弱的傾向,若超過80重量%時,則較難獲得足夠的導電 性。 以指定的混合比並用乾摻合或熔融混練等方法混合結 晶性聚合物及導電性填料後,將混合物形成板片或薄膜。 其次,於此板片狀或薄膜狀的成形体之表面上,施以 喷砂等機械性研磨及/或利用鉻酸及硫酸之混合液等的蝕 刻處理,使導電性填料露出於成形体之表面上,於其上施 以鍍鎳(N i )並使形成電極,鍍鎳(N i )層係採用無電解鍍 著、採用電解鍍著之任一種方法予以形成即可。至於無電574717 V. Description of the invention (2) The specific resistance of the electrode formed under 2 Ω * cmvx is at 20 ° C, i is based on the foregoing system, and the electrode is based on the above-mentioned present invention. Element, of which electrode is the ptc element of item 2 of the present invention. Patent application of the present invention: the ore nickel (Ni) layer is characterized by electrolytic nickel plating.) The layer is a PTC element of the third item of the present invention. Components, of which the PTC component of item 4 is based on the above-mentioned demineralized nickel ⑷) layer ;;: K (N1) layer and the upper layer of the electrical component; two: " the scope of profit No. 5 The m element of the term is characterized by the aforementioned .T ^ p \ Ni: p ^; ^ Nl} ^ ^ ^ M tt *% is too pm +1 and the nickel plating (N1) layer is characterized. The 6th PTC element of the patent scope of the element is characterized by the aforementioned .Bθ \ electroless nickel (H) layer. Element, " ΐr: The PTC element of item 7 of the patent scope is based on the above-mentioned Shizhi Mine Record (Nl) layer is a graphite dispersed electrolytic ore nickel (Nι) layer containing dispersed graphite in the recording film As a feature. … The PTC element in the eighth item of the “Political Stone Element” is based on the foregoing, and the thickness of the middle electrode is 5 to 40 cores. ^ The implementation of Deng Ming is as follows: 2: ==: 二 ^ After careful research [Find out that 91043-TYKIIU.ptd is made from the matrix of hydrate and conductive filler, orally, day by day. Page 6 574717 V. Description of the invention (3) Nickel plating is formed on both sides of the conductive plate When the (N i) layer is used as the provided electrode, the amount of the reducing agent derived from the non-conductive P or B contained in the nickel-plated (N 1) coating is reduced, and the specific resistance at 20 ° C is 1 PTC elements that are stable below 2 Ω · cm and have sufficiently low specific resistance. The present invention will be described in detail below. The crystalline polymer used in the present invention is not particularly limited, and examples thereof include polymers such as polyethylene and polypropylene. Olefins, halogenated vinyl, or vinylidene polymers, and these modified substances, the use of crystalline polyolefins is preferred, high density polyethylene is particularly suitable. As for conductive fillers, Carbon black, graphite, carbon fiber, and metal particles or metal fibers such as nickel, copper, and silver. Mixing ratio of conductive polymer and conductive filler, for crystalline polymer: 20 to 80% by weight, preferably conductive filler: 80 to 20% by weight, for crystalline polymer: 3 to 70 Conductive filler: 70% to 30% by weight is preferred. When the crystalline polymer is less than 20% by weight, the strength of the conductive plate tends to weaken. If it exceeds 80% by weight, then It is difficult to obtain sufficient conductivity. After the crystalline polymer and conductive filler are mixed at a specified mixing ratio by dry blending or melt kneading, etc., the mixture is formed into a sheet or film. Next, the sheet or film is here The surface of the shaped compact is subjected to mechanical polishing such as sandblasting and / or etching treatment using a mixed solution of chromic acid and sulfuric acid to expose the conductive filler on the surface of the compact and apply plating thereto Nickel (N i) can be used to form an electrode, and the nickel (N i) plating layer can be formed by either electroless plating or electrolytic plating.

91043-TYK1IU. ptd 第7頁 574717 五、發明說明(4) 解鍍著,雖採用次磷酸趟 等,惟採用次磷酸鹽日寺:;為風及/氨() ^時,為鑛著被膜中;包圍ί中;;=非= 性,於鍍鎳(Ni)被膜中若 人^ Ρ或Β因係非導電 之比電阻變大,變成未= 3有P或B時,則鍍著被膜 室溫下足夠低的比電阻之ρτ 之目的之安定且具有 酸鹽為還原劑之無電解鑛鎳時,有必要1,在進行以次罐 鍍著被膜中之Ρ成為2重量%以下,又 s理鍍著條件至使 原劑之無電解鍍鎳(Nl)時ϋ,有必要总進行以氫化硼為還 被膜中之Β成為2重量%以下。對採用 &著條件至使鍍著 之鍍著浴時,非導電性物質不為被膜用聯氨為還原劑 足夠低的PTC元件。 G圍’可得安定且 至於電解鍍著,係可適用已採用 化物浴、胺磺酸浴等公知鍍鎳(N i)浴。、w a 11 )浴、氣 光澤劑於此等鍍著浴内的鍍著浴之半又扭用已添加有機 亦可適用。 ''畢鍍著、光澤鍍著 又,於使PTC元件與電氣機器之接# 情形’為使接觸電阻減少,若使經予分:要觸並予使用的 鍍鎳(Ni)層作為鍍鎳(Ni)層予以形成日^政石墨之石墨分散 電性優越的石墨以點方式分散且與接觸於鍍層表面上導 性會提高,可使接觸電阻減少。至於使八^間之電氣接觸 的石墨,以天然石墨或人造石墨之任—^,於鍍著被膜中 5 0 %累積徑在1 〇 # m以下的微粉碎石墨為宜均可,惟以採用 累積徑在5 // m以下的微粉碎石墨為最宜,。又以採用5 0 0/〇 #者採用平均粒 91043-TYKHU.ptd 第8頁91043-TYK1IU. Ptd Page 7 574717 V. Description of the invention (4) Unplating, although hypophosphite is used, but hypophosphite is used:; for wind and / ammonia () ^, for mineral coating Medium; surrounded by ί ;; ===, if the person ^ P or B in the nickel-plated (Ni) coating becomes non-conductive because the specific resistance becomes larger and becomes less than 3, P or B is coated. When the room temperature is sufficiently low and the specific resistance of ρτ is stable and the electroless nickel with acid salt is the reducing agent, it is necessary to make the P in the secondary coating film less than 2% by weight. When the plating conditions are such that the electroless nickel (Nl) plating of the original agent is performed, it is necessary to always make B in the coating with boron hydride as the coating to be 2% by weight or less. For PTC elements with & conditions where the non-conductive material is not sufficiently low as the reducing agent for the coating when the plating bath is used for plating. G 'is stable and, as for electrolytic plating, a well-known nickel (Ni) bath such as a compound bath and a sulfamic acid bath can be applied. , W a 11) bath, gas gloss agent in these plating baths, half of the plating bath and twisted organic added can also be applied. "Plating and gloss plating are used to connect the PTC element to the electrical equipment." In order to reduce the contact resistance, if it is divided into points: a nickel-plated (Ni) layer to be used is used as nickel plating. The (Ni) layer is formed of graphite. The graphite with excellent electrical dispersion is dispersed in a point manner and the conductivity with the surface in contact with the plating layer is improved, which can reduce the contact resistance. As for the graphite that makes electrical contact between the two, any one of natural graphite or artificial graphite— ^, 50% of the finely pulverized graphite with a cumulative diameter of less than 10 mm in the coating film may be used. Finely pulverized graphite with a cumulative diameter below 5 // m is optimal. The average grain size of those who use 5 0 0 / 〇 # is 91043-TYKHU.ptd Page 8

574717574717

五、發明說明(5) 度在0 · 1 " m前後的石墨化碳雾 以-定量之水稀釋的界心性劑;石:等,細石墨係與已 分分散後,添加入鍍著、夜 二=石墨分散劑混練,經充 成約0· 5〜10重量%為宜。^ 。分散劑之配合量係對石墨設 卜100g/L之添加量為a w糸對鍵著液予以調整成 -筒等方式令其於健;槽;墨的艘著液係以 電解槽下部之細孔吹入介#、,十彳9間循%、同時由已設於 經常分散狀態為宜。如::::攪拌等的攪拌方式以保持 〇·卜25重量%之含有率 曰由、、隹持良好的分散狀態,可以 墨分散鍍著係亦可以石墨分散於鍍著被膜中。此種石 墨之分散量的管理以;二角:鍍者進行亦可,惟鍍著浴或石 又,鍍鎳(川層行電解鍵著為較宜。 上層之電解鍍銲(Nn二 下層之無電解鍍鎳(Ni)層及 時,於使形成成的二層鍍鎳⑷)層即可。此 此情形在無電解鑛著’二者層電解鑛著層亦可’惟 2重量!ίό以下的必要。勺或Β#之非冷電性物質之量有設成 Λ述的链韓(Nl)層之厚度以5〜40 _為宜,以15〜25〆 辩…之情带合鍍^著層之厚度若未滿5 V m時,則經予施加高電 板片。:έ、曼成缺乏耐電壓性,鍍鎳(N i )被膜會由導電性 反一局°卩的制離並生成膨賬,又鍍著被膜會部分的剝離。 。方面’鍍著層之厚度若超過40/ζιιι時,本發明目的之 2〇 C比電阻即使在1 · 2 Ω · cm以下亦在經濟成本上變成不 利的,故以上限為40 "m。 如上述進行,藉由控制為鍍N i被膜之厚度或鍍箸被膜 91043-TYKHU. ptdV. Description of the invention (5) Graphitized carbon mist with a degree of concentration around 0 · 1 " m is a centripetal agent diluted with a certain amount of water; stone: etc. After fine graphite is dispersed, it is added to the plating, Yeer 2 = graphite dispersant kneaded, it is appropriate to charge to about 0.5 ~ 10% by weight. ^. The blending amount of the dispersant is 100g / L for graphite. The addition amount is aw. The bonding liquid is adjusted to-the tube and other methods to make it healthy.吹入 介 #, 10% and 9% cycle rate, and it is advisable to set it in a frequently dispersed state. Such as :::: Stirring and other stirring methods to maintain a content ratio of 25% by weight. The dispersion state is well-preserved. It can be ink-dispersed or graphite-dispersed in the coating film. The management of the dispersion of this graphite is: two corners: plating can be performed, but bath or stone plating, nickel plating (Kawasaki line electrolytic bonding is more suitable. Electrolytic plating of the upper layer (Nn two lower layers) The electroless nickel (Ni) plating layer is timely, so that the formed two nickel plating layer can be used. In this case, the electroless deposits can be used in both layers, but only 2 weights! The amount of the non-thermoelectric substance of the spoon or B # may be set to the thickness of the chain (Nl) layer described in Λ is preferably 5 to 40 mm, and 15 to 25 mm to argue ... If the thickness of the landing layer is less than 5 V m, the high-electricity sheet is applied .: 、, Man Cheng lacks the voltage resistance, and the nickel-plated (N i) coating will be separated from the conductive layer by one degree. In addition, if the thickness of the plating layer exceeds 40 / ζιι, the 20C specific resistance of the object of the present invention is economical even if the thickness of the plating layer exceeds 40 / ζιι. The cost becomes unfavorable, so the upper limit is 40 " m. As described above, by controlling the thickness of the Ni-plated film or the hafnium-plated film 91043-TYKHU. Ptd

surface

第9頁 574717 五、發明說明(6) 中所包圍的P或B等的非導電性物質之量,可得20 °C之比電 阻為1· 2 Ω · cm以下的PTC元件。 f施龙丨 以下舉出實施例,並更詳細的說明本發明。 (貧施例) 在塑性研磨機(P 1 as t om i 1 1 )中,將高密度聚乙缚# 末(熔點·· 1 35 °C、Dow chemical公司製造)45重量%及球 狀酴酸樹脂在1 9 0 0 °C培燒成平均粒徑1 5 // m之粒狀坡ί离化 碳黑(glassy carbon ) (GPC - 30Η,UNITIKA 公司製造)已5 重量%,在混練溫度1 5 (TC熔融混練1 〇分鐘。利用熱模壓機 將此混練物成形成壁厚:〇 _ 3 5 m m之板片。由此板片裁切出 縱1 Ocin,橫8cm之試片。將此試片在70 °C之鉻酸及石定酸之 混合液中進行蝕刻處理並予水洗後,浸潰於含有氣化绝 氣化亞錫等之觸媒溶液(W 〇 r 1 d m e t a 1公司製造:p ]\| p及 )1 50mL/L及鹽酸1 50mL/L之水溶液内1 〇分鐘並予水洗後$ 浸潰於50mL/L之硫酸溶液内3分鐘,再度水洗並進行 ’ 觸媒處理。如此於使表面活性化的試片之兩面上以夺\與 示的條件形成各種鍍鎳(N i )層,製作1 5種類之供試相;所 表1中所示的A〜E之各種鍵鎳(N i浴之組成,如下、 使形成僅電解鍍著的鍍著膜時,以表1之下層之襴所疋一c 條件施加觸擊電鍍(strike plating )後,以表}不 示鍍著尽度係隨浸潰時間或通電時間之變化而|周、斤 又 的 之上層 574717 五、發明說明(7) 之襴所示的條件使形成鍍著膜。所得的鍍著被膜中之P及B 之含有量係由螢光X射線予以求得。鍍著膜係由鍍著前後 之重量測定予以求得 [A 1 :無電解鍍著浴]Page 9 574717 V. The amount of non-conductive materials such as P or B enclosed in the description of the invention (6), can obtain a PTC device with a specific resistance of 20 ° C below 1 · 2 Ω · cm. f Shilong 丨 Examples are given below to explain the present invention in more detail. (Poor Example) In a plastic grinder (P 1 as tom i 1 1), 45% by weight of high-density polyethylene #melting point (melting point · 1 35 ° C, manufactured by Dow Chemical Co., Ltd.) and spherical 酴Acid resin is sintered at 1900 ° C to produce a granular slope with an average particle diameter of 1 5 // m. Glassy carbon black (GPC-30Η, manufactured by UNITIKA) has been 5% by weight at the kneading temperature. 15 (TC melt-kneading for 10 minutes. This kneaded material was formed into a sheet having a wall thickness of 0 mm to 3 mm by a hot press. From this sheet, a test piece with 1 Ocin in length and 8 cm in width was cut out. This test piece was etched in a mixed solution of chromic acid and lithosauric acid at 70 ° C, washed with water, and then immersed in a catalyst solution (W 〇 1 dmeta 1 Manufactured by the company: p] \ | p and) 1 50mL / L and hydrochloric acid 1 50mL / L in an aqueous solution for 10 minutes and washed with water. $ Immerse in a 50mL / L sulfuric acid solution for 3 minutes, and then wash with water again and touch ' Media treatment. In this way, various nickel-plated (Ni) layers were formed on both sides of the surface-activated test piece under the conditions shown, and 15 types of test phases were produced; A ~ shown in Table 1 E The composition of various bond nickel (Ni baths is as follows. When forming a plating film that is only electrolytically plated, strike plating is applied under the conditions listed in Table 1 below.) The degree of plating is shown as the change in the immersion time or the energization time. The upper layer of Zhou, Jinyou 574717 V. The conditions shown in (7) of the invention make a plating film. In the obtained plating film, The contents of P and B are obtained by fluorescent X-rays. The plating film is obtained by measuring the weight before and after plating [A 1: electroless plating bath]

35 g/L 5 g/L 15 g/L 硫酸鎳 次填酸鈉 檸檬酸納 [A 2 :無電解鍍著浴]35 g / L 5 g / L 15 g / L Nickel sulfate Sodium underfill Sodium citrate [A 2: Electroless plating bath]

25 g/L 10 g/L 30 g/L 硫酸鎳 次構酸鈉 葡糖酸鈉 [B 1 :無電解鍍著浴]25 g / L 10 g / L 30 g / L Nickel Sulfate Sodium Hypophosphate Sodium Gluconate [B 1: Electroless plating bath]

Nibol〇n-5M( world metal 公司製造) :200mL/L Nibol〇n-5B( world metal 公司製造) : 70mL/LNibol〇n-5M (made by world metal company): 200mL / L Nibol〇n-5B (made by world metal company): 70mL / L

[B2 :無電解鍍著浴] 硫酸鎳 琥珀酸鈉 硼酸 氯化銨 一田I日公即、哈[B2: Electroless plating bath] Nickel sulfate, sodium succinate, boric acid, ammonium chloride

3 0 g/L 55 g/L 30 g/L 30 g/L 2 g/L3 0 g / L 55 g / L 30 g / L 30 g / L 2 g / L

91043-TYKHU. ptd 第11頁 57471791043-TYKHU.ptd p. 11 574717

91043-TYK1IU. pld 第12頁 574717 五、發明說明(9)91043-TYK1IU. Pld Page 12 574717 V. Description of Invention (9)

分散劑(笨續酸鈉) : 5 m L / LDispersant (sodium fumarate): 5 m L / L

無凹痕劑(月桂基硫酸鈉) : 2 m L / L 炎1 料 編 號 鍍 鎳(Ni) 條 件 鈹為 )V(度 (β m) 鍍著被膜屮 P、·Β 或 imc) 之A彳ί丨丨1: (丨碰%) Μ分 h* 上 Μ 种:類 浴溫 (°C) vii流密度 (A/dm2) 鍍答浴 稱類 浴溫 (°C) VII流密度 (A/dm2) 1 A1 85 5 Ρ : 1.5 本發明 2 A1 85 25 Ρ : 1.5 本發明 3 A1 85 3 Ρ : 1.5 本發明 4 A2 90 25 Ρ : 2.2 比較例 5 B1 60 16 Β : 0.1 本發明 6 B2 60 17 Β : 1.8 本發明 7 B3 60 25 Β : 2.1 比較例 8 C 95 15 本發明 9 D 55 0.5 D 55 5 5 木發明 10 D 55 0.5 D 55 5 25 本發明 11 D 55 0.5 D 55 5 3 本發明 12 E 55 1 E 55 20 25 C : 3.0 本發明 13 A1 85 D 55 5 25 Ρ : 1.5 本發明 14 A1 85 — E 55 20 25 Ρ : 1.5 C : 3.0 本發明Dentless agent (sodium lauryl sulfate): 2 m L / L Yan 1 material number nickel (Ni) plating beryllium) V (degrees (β m) coated with A (P, · B or imc)) ί 丨 丨 1: (丨%) Μ points h * Up Μ species: bath temperature (° C) vii flow density (A / dm2) plating bath bath temperature (° C) VII flow density (A / dm2) 1 A1 85 5 P: 1.5 The present invention 2 A1 85 25 P: 1.5 The present invention 3 A1 85 3 P: 1.5 The present invention 4 A2 90 25 P: 2.2 Comparative example 5 B1 60 16 B: 0.1 The present invention 6 B2 60 17 Β: 1.8 The present invention 7 B3 60 25 Β: 2.1 Comparative Example 8 C 95 15 The present invention 9 D 55 0.5 D 55 5 5 Wood invention 10 D 55 0.5 D 55 5 25 The invention 11 D 55 0.5 D 55 5 3 This Invention 12 E 55 1 E 55 20 25 C: 3.0 Invention 13 A1 85 D 55 5 25 P: 1.5 Invention 14 A1 85 — E 55 20 25 P: 1.5 C: 3.0 Invention

91043-TYKI1U. ptd 第13頁 五、發明說明(10) 由上述方法而得的供 作PTC元件。測定此PTC元^才冲裁出直徑15_之圓盤並製 之比電阻(p : Ω · M)。之電阻,依下式算出PTC元件 P · A/t 述的内容91043-TYKI1U. Ptd page 13 V. Description of the invention (10) The PTC element obtained by the above method. After measuring this PTC element, a disc with a diameter of 15 mm was punched out and the specific resistance (p: Ω · M) was made. The resistance is calculated by the following formula: P · A / t

PTCPTC

R 式中·,各符號係表示下 ptc元阻值(Ω) -ptc元件J電極面積(⑽2) 豆次,牛之厚度(㈤ 作經予施加高電壓至PTC元件時之電 查白、、、1被膜之耐久性,實施耐電壓試驗。耐電壓試驗 係對PTC元件施加50V、50A並保持1 0分鐘後,觀察鎳(Ni) 被膜之變化,判定被膜上有膨脹,有剝離發生的現象作為 不良被膜上有實用上不成問題之程度的極少許膨脹,有剝 離發生的現象視作良好,被膜上有膨賬,無剝離發生的現 象視作優越。 比電阻之測定結果及耐電壓試驗之結果示於表2。In the formula, ·, each symbol indicates the resistance value of the ptc element (Ω)-the area of the J electrode of the ptc element (⑽2), the number of pulses, the thickness of the cow (㈤ is the electrical check when a high voltage is applied to the PTC element ,, The durability of the coating was tested with a withstand voltage. The withstand voltage test was performed after applying 50V and 50A to the PTC element and holding it for 10 minutes. The change in the nickel (Ni) coating was observed and it was judged that there was swelling and peeling on the coating. As a bad film, there is very little swelling to a practically non-problematic degree, and the phenomenon of peeling is considered to be good, and the film is swollen, and no peeling is considered to be superior. Measurement results of specific resistance and withstand voltage test The results are shown in Table 2.

91043-TYKHU.ptd 第14頁 574717 五、發明說明(π) ^2 ,试料編號 比屯附 (Ω · cm) 丨咐rtiM性 區分 1 1.1 優 本發明 2 1.1 優 本發明 3 1.1 優 木發叨 4 2.2 悛 比較例 5 1.1 優 本發明 6 1.2 優 本發明 7 2.0 優 比較例 8 1.0 優 本發叨 9 0.9 優 木發明 10 0.9 優 木發叨 11 0.9 優 本發明 12 0.9 優 本發明 13 1.0 優 本發明 14 1.0 優 本發明 91043-TYKHU.ptd 第15頁 574717 五、發明說明U2) 由表2顯而可知,用作電極之鍍鎳(N i )被膜中的P量或 B量在2重量%以下之PTC元件,係表示極低的比電阻值。 又,鑛著被膜之厚度在以上的PTC元件,可知在而t電 壓特性方面係優越的。91043-TYKHU.ptd Page 14 574717 V. Description of the invention (π) ^ 2, sample number than attached (Ω · cm) 丨 order rtiM sex distinction 1 1.1 Excellent invention 2 1.1 Excellent invention 3 1.1 Excellent wood hair叨 4 2.2 悛 Comparative example 5 1.1 Excellent present invention 6 1.2 Excellent present invention 7 2.0 Excellent comparative example 8 1.0 Excellent present hair 9 0.9 Excellent present invention 10 0.9 Excellent present hair 11 0.9 Excellent present 12 0.9 Excellent present 13 1.0 The present invention 14 1.0 The present invention 91043-TYKHU.ptd Page 15 574717 V. Description of the invention U2) As can be seen from Table 2, the amount of P or B in the nickel-plated (N i) coating used as an electrode is 2 PTC elements with a weight percentage of less than 1% represent extremely low specific resistance values. In addition, it was found that the PTC element having the thickness of the mineral coating was greater than that in terms of t-voltage characteristics.

91043-TYKI1U. ptd 第16頁 ^上谷襴由本局填註) 中文 發明專利說明書 正溫度係數(>TC )元件一 574717 發明名稱 發明人 (共4人) 八 甲 2 共 英文 (fx) ιΜ) /住居所 (中文) /住居所 (英文) 名稱或 姓名 (中文)91043-TYKI1U. Ptd Page 16 ^ Shang Gu 襕 Filled by the Bureau) Chinese Patent Specification for Positive Temperature Coefficient (> TC) Element One 574717 Inventor (4 people in total) Invention Name 2 Total English (fx) ιΜ) / Residence (Chinese) / Residence (English) Name or Name (Chinese)

POSITIVE TEM^KATURE COEFFICIENT (PTC) ELEMENT 越後良彰POSITIVE TEM ^ KATURE COEFFICIENT (PTC) ELEMENT

1.ECHIG0 YOSHIAKI1.ECHIG0 YOSHIAKI

1.曰本JP 1.曰本國京都府宇治市宇治小櫻23番地 尤尼吉可股份者限公兩中央研究所内 1. 23, Ujiosakura, Uji-shi , Kyoto JAPAN Research & Development Center of Unitika Ltd. 1. 鋼鈑工業股份有限公司 2. 東洋鋼鈑股份有限公司 1. Κ0ΗΑΝ KOGYO CO., LTD 2. T0Y0 KOHAN CO., LTD. · 名稱或 芦名 (英文)1. Japanese JP 1. Japanese 23, Uji Sakura, Uji City, Kyoto Prefecture, Japan, and two public research institutes in the public limited company 1.23, Ujiosakura, Uji-shi, Kyoto JAPAN Research & Development Center of Unitika Ltd. 1. Steel Sheet Industry Co., Ltd. 2. Toyo Steel Sheet Co., Ltd. 1. Κ0ΗΑΝ KOGYO CO., LTD 2. T0Y0 KOHAN CO., LTD. · Name or name (English)

1.日本JP 2.日本JP 所所文 居業 住營中 地: 4 9 13町 井番 豊四 西區 市田 松代 下千 縣都 口京 山東 國國 本本 }同 同相 不者 者請 請申 申局 局貴 貴向 向前 前與 與址 址地 地本 本C κί\ 住居所 遺業所< (央文)2 .1394, Nishitoyoi, Kudamatsu-shi, Yamaguchi, JAPAN Co., LTD.1. Japan JP 2. Japan JP Office, resident residence in the camp: 4 9 13 Machii Panyu Shisi-ku, Shimomatsu, Shimochi Prefecture, Tokyo Metropolitan City, Japan and the Republic of Japan} Those who are not in the same phase, please apply to the Bureau Guigui moved forward with the address book C κί \ Resident Residence & Estate (Central) 2.1394, Nishitoyoi, Kudamatsu-shi, Yamaguchi, JAPAN Co., LTD.

1.2-12, Yonbancho, Chiyoda-ku, Tokyo, 102-8447 JAPAN 1. 岩崎守 2. 田邊傳一1.2-12, Yonbancho, Chiyoda-ku, Tokyo, 102-8447 JAPAN 1. Iwasaki Mori 2. Tanabe Denichi

l.IWASAKI MAM0RU 2.ΤΑΝΑΒΕ HIR0KAZUl.IWASAKI MAM0RU 2.ΤΑΝΑΒΕ HIR0KAZU

KOHAN KOGYOKOHAN KOGYO

H7-Qm/jrFYTrH7-Qm / jrFYTr

Claims (1)

著被膜中含有2重量%以下的p或b之Ni-p或Ni-b無電解鍍鎳 (Ni)層鍍鎳(Ni)層而成的電極,在2〇。〇之比電阻為12Q • cm以下。 -如申請專利範圍第1項之正溫度係數(PTC)元件,其中電 極為無電解鍍鎳(Ni)層。 •如申請專利範圍第1項之正溫度係數(pTC)元件,其中電 極為電解鍍鎳(Ni)層。 〃 4·如申請專利範圍第}項之正溫度係數(pTC)元件,其中電 極為由下層之無電解鍍鎳(Ni)層及上層之電解鑛鎳(Ni)層 而成的二層鍍鎳(Ni)層。 曰 t ^ Γ w專利1&圍第3項或第4項之正溫度係數(PTC )元 ,,、中電解鍍鎳(Ni)層係於鍍著被膜中含有已分散石墨 的石墨分散電解鍍鎳(Ni)層。The electrode formed by Ni-p or Ni-b electroless nickel (Ni) plating and nickel (Ni) plating containing p or b in an amount of 2% by weight or less was 20%. The specific resistance of 〇 is 12Q • cm or less. -A positive temperature coefficient (PTC) element as described in item 1 of the patent application, where the electrode is electrolessly plated with nickel (Ni). • A positive temperature coefficient (pTC) element such as the one in the scope of patent application, where the electrode is electrolytically plated with nickel (Ni). · 4 · For example, the positive temperature coefficient (pTC) element of the scope of application for patent, in which the electrode is a two-layer nickel plating made of an electroless nickel (Ni) layer on the lower layer and an electrolytic nickel (Ni) layer on the upper layer. (Ni) layer. T ^ Γ w Patent 1 & around the positive temperature coefficient (PTC) element of item 3 or 4, the intermediate electrolytic nickel (Ni) plating layer is a graphite dispersion electrolytic plating containing dispersed graphite in the coating film Nickel (Ni) layer.
TW89113912A 1999-07-13 2000-07-12 Positive temperature coefficient (PTC) element TW574717B (en)

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JPH0935906A (en) * 1995-07-21 1997-02-07 Tdk Corp Polymer based ptc element and its manufacture
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