WO2000019543A1 - Photodiode et systeme de communication optique - Google Patents

Photodiode et systeme de communication optique Download PDF

Info

Publication number
WO2000019543A1
WO2000019543A1 PCT/JP1999/005170 JP9905170W WO0019543A1 WO 2000019543 A1 WO2000019543 A1 WO 2000019543A1 JP 9905170 W JP9905170 W JP 9905170W WO 0019543 A1 WO0019543 A1 WO 0019543A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
photodiode
wavelength
contact layer
communication system
Prior art date
Application number
PCT/JP1999/005170
Other languages
English (en)
Japanese (ja)
Inventor
Shojiro Kitamura
Takeo Kawase
Takeo Kaneko
Original Assignee
Seiko Epson Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corporation filed Critical Seiko Epson Corporation
Publication of WO2000019543A1 publication Critical patent/WO2000019543A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type

Definitions

  • the present invention relates to a photodiode having wavelength selectivity and suitable for use in wavelength division multiplexing optical communication, and an optical communication system using the same.
  • wavelength division multiplexing optical communication capable of high-speed and large-capacity communication has attracted attention.
  • this wavelength division multiplexing optical communication since a plurality of lights having different wavelengths are used as signals, in order to realize low crosstalk communication, it is necessary to use a photodiode having wavelength selectivity on the receiver side. desirable.
  • a photodiode having such wavelength selectivity is described in the literature (J. App 1. Phys. 78 (2), 15 Jul 1995 pp. 607-639).
  • a raised photodiode is disclosed.
  • the distributed reflection type multilayer mirror has wavelength selectivity, it is possible to achieve high wavelength selectivity with a small Q value for a specific wavelength.
  • this photodiode uses a distributed reflection multilayer mirror, it is necessary to accurately control the Mi of each layer.
  • the thickness of the light absorbing layer as well as the layer of the multilayer mirror needs to be set to a length that allows light to resonate between the upper and lower reflective multilayer mirrors. Needs to be controlled. Therefore, this photodiode has a drawback in that strict TO control of each layer is required, and fabrication is not easy. Disclosure of the invention
  • the present invention has been made in view of the above problems, and an object of the present invention is to provide a photodiode having wavelength selectivity and easy to manufacture. Another object of the present invention is to enable wavelength division multiplexing optical communication using an extremely simple optical circuit without using optical components such as a multiplexer and a demultiplexer using the photodiode according to the present invention. Another object of the present invention is to provide a simple optical communication system.
  • the photodiode of the present invention includes a semiconductor substrate, a light absorbing layer and a contact layer laminated on the semiconductor substrate, wherein the contact layer has a larger bandwidth than the light absorbing layer, and The contact layer has a thickness JJ capable of absorbing light having a wavelength equal to or less than the wavelength corresponding to the energy of the band width of the contact layer.
  • a film thickness capable of absorbing light having a wavelength equal to or less than the wavelength (human gc ) corresponding to the bandwidth of the contact layer, preferably absorbing 95% or more of such light. Since the contact layer has the largest possible thickness, light having a wavelength equal to or less than the specific wavelength gc is absorbed in the contact layer. Then, the light transmitted through the contact layer enters the light absorbing layer. Therefore, the contact layer functions as a filter that absorbs light in a specific wavelength range.
  • the light absorbing layer has the following formula:
  • the light having a wavelength that satisfies is absorbed.
  • the horizontal axis represents the wavelength
  • the vertical axis represents the photoelectric conversion efficiency of the pin-type photodiode.
  • Part of the incident light L (incident g n ⁇ J) is partially absorbed (the light corresponding to the portion indicated by the symbol a1 in FIG. 7) by the light absorbing layer, and the remaining light is absorbed by the contact layer and the contact layer.
  • Light absorption The light passes through the layer and enters the semiconductor chip.
  • the light in the predetermined wavelength region (including the input gcl and the input gil ) that is larger than the wavelength input gcl and is equal to or less than gil , including the wavelength, is mainly absorbed by the light absorption layer and converted into a photocurrent.
  • the layers other than the light absorption layer that is, the contact layer and the semiconductor substrate, electrons and holes excited by light absorption are annihilated because there is no electric field, and do not contribute to generation of photocurrent.
  • each of the contact layer and the light absorption layer functions as a filter for light in a specific wavelength region, and defines a wavelength region that can contribute to photocurrent to a specific range. And thus has excellent wavelength selectivity.
  • the photodiode Since the photodiode has wavelength selectivity, for example, even if light of wavelength, and light of wavelength ⁇ 2 are on the same optical path, a photodiode having wavelength selectivity corresponding to each wavelength is used. For example, it is possible to independently detect the light of wavelength ⁇ and the light of wavelength ⁇ 2 .
  • the photodiode since the photodiode has wavelength selectivity, for example, as shown in FIG. 7, the wavelength region of light that can be detected by the first photodiode is c1, and the wavelength region of light that can be detected by the second photodiode is c1, as shown in FIG.
  • the wavelength region By setting the wavelength region to be c 2, light of each wavelength can be detected independently.
  • a detectable wavelength region can be specified by controlling the composition and expansion of the contact layer and the light absorbing layer.
  • the control of the yarn and the film thickness is easier than the film formation of a distributed reflection type multilayer mirror or the like, and the photodiode can be manufactured by a simple process.
  • a plurality of lights having different wavelengths can be detected individually (or independently). For example, as shown in FIG. 7, in the use of the photodiode 1 0 0 1 and 1 0 0 2 wavelength region c 1 and c 2 containing the detection light Hachoe i and input 2 do not overlap Thus, two lights can be detected. The same applies to the case where the number of detected light is three or more.
  • good communication can be achieved with a crosstalk of -26 dB or less in wavelength division multiplexing optical communication using two or more signals using the photodiode according to the present invention as a light receiving element. .
  • the photodiode according to the present invention is desirably formed of a direct transition semiconductor in that a good wavelength cutoff characteristic can be obtained.
  • direct transition type semiconductors include AlGaAs, GalInP, ZnSSe and
  • a semiconductor such as an InGaN system can be used.
  • An optical communication system includes a light emitting element, an optical waveguide, and a light receiving element having the above-described photodiode, and the light emitting element and the light receiving element are directly optically connected to each other by the optical waveguide.
  • optical communication system a simple configuration consisting of a light-emitting element, an optical waveguide, for example, an optical fiber, and a light-receiving element having a photodiode according to the present invention is provided.
  • a wavelength division multiplexing optical communication system or the like can be configured with a configuration that does not require optical components such as a device.
  • the element and further, by optically directly coupling each emission port of the plurality of surface emitting lasers constituting the light emitting element, the core of the optical waveguide, and each light receiving surface of the photodiode according to the present invention, Unlike conventional optical communication systems, there is no need for optical components such as lenses, multiplexers, and demultiplexers. As a result, an optical communication system with a simple configuration, easy optical adjustment, and low-cost wavelength division multiplexing transmission can be configured.
  • Another optical communication system includes a first light receiving / emitting element including a light emitting element and a light receiving element having the above-described photodiode, an optical waveguide, and a light emitting element; A second light receiving / emitting element including a light receiving element having the light emitting element, wherein the first light receiving / emitting element and the second light receiving / emitting element are directly optically connected by an optical waveguide.
  • a simple structure including a first light receiving / emitting element, an optical waveguide, for example, an optical fiber and a second light receiving / emitting element, that is, a lens, a multiplexer, a duplexer
  • a wavelength division multiplexing optical communication system can be configured with a configuration that does not require optical components such as the above.
  • the light emitting element is a surface emitting laser, preferably a vertical cavity surface emitting laser.
  • FIG. 1 is a sectional view schematically showing a photodiode according to Embodiment 1 of the present invention.
  • FIG. 2 is a cross-sectional view schematically showing a manufacturing process of the photodiode shown in FIG.
  • FIG. 3 is a cross-sectional view schematically showing a manufacturing process performed subsequently to FIG.
  • FIG. 4 is a diagram showing an optical communication system using the photodiode of the present invention according to Embodiment 2 of the present invention.
  • FIG. 5 is a diagram showing an optical communication system using the photodiode of the present invention according to Embodiment 3 of the present invention.
  • FIG. 6 is a diagram showing an optical communication system using the photodiode of the present invention according to Embodiment 4 of the present invention.
  • FIG. 7 is a diagram showing the relationship between wavelength and photoelectric conversion efficiency for indicating the photoselectivity of the photodiode according to the present invention.
  • FIG. 1 is a cross-sectional view schematically showing a structure of a photodiode 100 according to one embodiment of the present invention.
  • a p - type contact layer 103 made of p - type Al b Ga 1-b As is sequentially laminated to form a pin-type photodiode.
  • a dielectric film 106 made of a silicon oxide film, a silicon nitride film, or the like is formed around a deposition layer formed of a plurality of semiconductor layers formed on the n-type semiconductor substrate 101.
  • the lower end of the dielectric film 106 is formed so as to reach the n-type semiconductor substrate 101.
  • the dielectric film 106 constitutes an incident surface, and is therefore at least optically transparent.
  • a p-type ohmic electrode 107 is formed so as to surround the light receiving section 110.
  • an n-type ohmic mil 09 is formed on the lower surface of the n-type semiconductor substrate 101.
  • the composition ratio of A1 in each layer of the light absorption layer 102 and the p-type contact layer 103 preferably has a relationship of 0 ⁇ a ⁇ b. That is, assuming that the wavelengths corresponding to the energy of the bandwidth of each layer of the light absorption layer 102 and the p-type contact layer 103 are gi and gc , respectively, a relationship of human gc ⁇ human gi is established.
  • Contact layer 103 e absorb light of s ⁇ e wavelengths having a relationship of gc ( ⁇ 8), in order for this light does not reach the light-absorbing layer 102 without a sufficient thickness, preferably, e_ axd ⁇ 0.05 (h: absorption coefficient of contact layer, d: thickness of contact layer).
  • h absorption coefficient of contact layer
  • d thickness of contact layer
  • light Hachoe gc following wavelengths e s is substantially fully in contact layer 103 is (for example, preferably 95% or more) absorption.
  • Hachoe wavelength's less long wavelength a and the wavelength e gi than gc the light (human gc rather human ⁇ ON gi) through the contact layer 103, is absorbed by the light absorbing layer 102.
  • the light of wavelength incident gi than the long wavelength light e L (A gi ⁇ A L) is transmitted through the contact layer 103 and Hikari ⁇ Osamuso 102. Then, only the light absorbed by the light absorption layer 102 contributes to the photocurrent and is detected.
  • light of a wavelength (person s ) having a relationship of s ⁇ person ge is almost absorbed by the contact layer 103.
  • the electron and hole pairs excited by this light absorption disappear because of no electric field in the contact layer, and do not contribute to the generation of photocurrent.
  • Light of a wavelength (incident L ) having a relation of incident gi ⁇ enter t passes through the contact layer 103 and the light absorbing layer 102 and is absorbed or transmitted by the n-type semiconductor substrate 101.
  • the light absorbed by the semiconductor substrate 101 does not contribute to the generation of a photocurrent similarly to the light absorbed by the contact layer 103.
  • MOVPE Metal Organic Vapor Phase E pit axy
  • MOVPE Metal Organic Vapor Phase E pit axy
  • the MO VP E method is used for epitaxial growth, but the MBE (Molecular Beam Epitaxial) method or LPE (Liguid Phase Epitaxial) method may be used.
  • a dielectric film consisting of SiO 2 of about 25 nm is deposited on the epitaxial growth layer by atmospheric pressure thermal CVD (Chemi ca 1 Vapor Deposition). Form 105.
  • the dielectric film 105 prevents surface contamination during the process of forming the epitaxial growth layer.
  • the n-type semiconductor substrate 101 is etched into a circular shape when viewed from the upper surface of the epitaxy forming layer until it is in a columnar shape.
  • Form part 1 1 2 The plane ⁇ of the columnar portion 112 is circular in the present embodiment, but is not limited to this.
  • the photoresist is removed, and the etching cross section is treated with ammonium sulfide or the like.
  • a dielectric film 106 made of SiO 2 is formed on the epitaxial growth layer and the etching cross section by the atmospheric pressure thermal CVD method. Further formed.
  • the dielectric film 106 since the upper surface of the columnar portion 112 becomes the light receiving portion 110 (see FIG. 1), the dielectric film 106 also functions as a protective film and an anti-reflection film in the light receiving portion 110.
  • the optical thickness of the dielectric film 106 in the light-receiving section 110 is set to be approximately one-fourth the wavelength of the light (detected light) used as the light source. Set to be.
  • a ring-shaped contact hole surrounding the light receiving section 110 is opened in the dielectric film 106 on the p-type contact layer 103 to form a p-type ohmic electrode.
  • the n-type semiconductor substrate 101 is polished to a thickness of 50 to 150 1m, which is a thickness that is easy to cleave, and then an n-type semiconductor S109 is formed. I do.
  • each element is cleaved to complete the element shown in FIG. When the device is formed by dicing or the like instead of cleavage, polishing of the n-type semiconductor substrate is not necessary.
  • the n-type semiconductor substrate 101 is replaced with a high-resistance GaAs semiconductor substrate and an n-type contact layer, and the n-type contact layer is exposed by etching to form a dielectric film.
  • a contact hole may be formed in the film to form an n-type semiconductor 109.
  • the photodiode of the present embodiment has wavelength selectivity.
  • ⁇ gc 8 10 nm
  • FIG. 4 shows an embodiment of an optical communication system using the photodiode according to the present invention.
  • the optical communication system includes a light emitting element 100, an optical fiber 20 for transmitting light emitted from the light emitting element 100 0, and a light receiving element 20 for receiving light from the optical fiber 20. 0 and 0.
  • the light emitting device 1000 includes a plurality (two in this example) of surface emitting lasers 10-1 and 10-2 each having a different wavelength of emitted light.
  • two surface emitting lasers 10-1 (oscillation wavelength: human,) and 10-2 (oscillation wavelength: 2 ) having different wavelengths are arranged close to each other, and One exit port is arranged so as to face the core section 22 of the optical fiber 20. It is very difficult for an edge-emitting semiconductor laser to arrange a plurality of light-emitting components having different wavelengths close to each other.
  • a vertical cavity surface emitting laser having a resonance path in a direction perpendicular to the substrate has a high degree of freedom in in-plane arrangement, and the light emitting portions of a plurality of surface emitting lasers having different wavelengths. Are easily arranged close to each other, and are one of the most suitable as the light emitting element of the present invention.
  • the light receiving element 2 0 0 at least previous remarks third wavelengths's t and person 2 photodetection used possible two photodiodes 1 0 0 1 and 1 0 0 2.
  • the photodiodes 100-1 and 100-2 are arranged with their light receiving surfaces facing the core portion 22 of the optical fiber 20.
  • the wavelength corresponding to the energy of the bandwidth of the light absorption layer and the contact layer of the first photodiode 100-1 constituting the light receiving element 2000 is deviated.
  • human gil Oyobie gcl when is its wavelength corresponding to the energy of the second photodiode 1 0 0 2 bandwidth of the light absorption layer and the contact layer and it's si2 Oyobie gc2, shown in FIG. 7 like,
  • the light emitting element 1000 and the light receiving element 2000 are directly optically connected by the optical waveguide 20, and two-wavelength wavelength division multiplexing optical communication can be performed. The same applies when three or more different wavelengths are used. Of course, it can be applied to the case of a single wavelength.
  • a device mounted with a plurality of surface emitting lasers having different oscillation wavelengths is used as the light emitting device used in the present S mode. (I-L characteristics) are desirable, but the present invention is not limited to this, and a monolithic surface-emitting laser that can emit light of multiple wavelengths can be used.
  • optical fiber 20 it is preferable to use a GI (Graded Index) type fluoroplastic fiber or a GI type HPCF (Hard Polymer Clad Fiber) having a large core diameter, small light loss and small dispersion. .
  • GI Gram Index
  • HPCF Hard Polymer Clad Fiber
  • an element mounted with a plurality of surface emitting lasers having different oscillation wavelengths as a light emitting element, and a plurality of photodiodes according to the present invention used as a light receiving element can emit light. It is possible to configure a wavelength division multiplexing optical communication system having a simple configuration including three elements: an element, an optical fiber, and a light receiving element. Then, by optically aligning the emission ports of the plurality of surface emitting lasers constituting the light emitting element, the core of the optical fiber, and the light receiving surface of the photodiode according to the present invention, the optical communication system of It does not require optical components such as lenses, multiplexers, and demultiplexers. As a result, an optical communication system with a simple configuration, easy optical adjustment, and low-cost wavelength division multiplex transmission can be configured.
  • the first surface emitting laser 10-1 and the second surface emitting laser 102 are used as light emitting elements, and the first photodiode 100 according to the present invention is used as a light receiving element.
  • the first and second photodiodes 100-2 it was confirmed that good communication with a crosstalk of no more than 26 dB was possible. The following were used as each light emitting element and light receiving element.
  • the first photodiode 100-1 The first photodiode 100-1;
  • the n-type G a As substrate A 1 0. 07 Ga 0 . 93 light absorbing layer of IS4 ⁇ m of As and P-type Al 0. 085 Ga 0. p-type fl Jf 4 ⁇ M consisting 915 As It is a pin- type photodiode with a stacked contact layer, with a gcl of 810 nm and a human gil of 820 nm.
  • Wavelength 815 ⁇ 1 ⁇ 1 ⁇ input gci, input 1 / ⁇ gi
  • Second surface emitting laser 10-2 Second surface emitting laser 10-2;
  • FIG. 5 shows another embodiment of the optical communication system using the photodiode according to the present invention.
  • This optical communication system includes a first light receiving / emitting element 3000, an optical fiber 20, and a second light receiving / emitting element 4000.
  • first light emitting / receiving element 3000 In the first light emitting / receiving element 3000, light of wavelength, can be detected by the first photodiode 100-1, and light of wavelength z can be detected by the second surface emitting laser 10-2. Can be emitted. Further, in the second light emitting / receiving element 4000, light of wavelength 2 can be detected by the second photodiode 100-2, and the wavelength ⁇ can be detected by the first surface emitting laser 10-1. ! Of light can be emitted.
  • gil and ⁇ gcl respectively.
  • the wavelengths corresponding to the energy of the bandwidth of the light absorption layer and the contact layer of the second photodiode 100-2 constituting the second light-receiving / emitting element 40000 are gi2 and human gc2 , respectively.
  • the relationship of human gcl and human gil ⁇ human gc2 ⁇ A gi2 is established.
  • Full-duplex optical communication can be performed by directly optically connecting the first light emitting / receiving element 3000 and the second light emitting / receiving element 4000 with the optical waveguide 20. The same applies when three or more different wavelengths are used.
  • the surface emitting laser and the photodiode according to the present invention capable of detecting light having a wavelength different from the oscillation wavelength of the surface emitting laser are used as the light receiving and emitting elements. Accordingly, a wavelength division multiplexing optical communication system having a simple configuration including three members, a first light receiving / emitting element, an optical fino, and a second light receiving / emitting element can be configured. Then, each light-emitting or emitting surface of one or more surface-emitting lasers constituting each light-receiving / emitting element, the light-receiving surface of one or more photodiodes according to the present invention, and the core portion of the optical waveguide are optically positioned.
  • FIG. 6 shows a light-receiving / emitting element 500 that can be used instead of the light-receiving / emitting element in the optical communication system shown in FIG.
  • the light emitting / receiving element 500 0 has a first monolithic light emitting / receiving element 200-1 and a second monolithic light emitting / receiving element 200-2.
  • the first monolithic light-receiving / emitting element 200-1 comprises a first photodiode 100-1 and a first surface-emitting laser 100-1. 1 are monolithically laminated and formed.
  • the second monolithic light emitting / receiving element 200-2 is formed by monolithically laminating a second photodiode 100-2 and a second surface emitting laser 10-2.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

L'invention concerne une photodiode constituée de deux couches, une couche (102) photoabsorbante et une couche (103) de contact, formées l'une sur l'autre sur un substrat (101) semiconducteur, la largeur de bande de la couche (103) de contact étant plus importante que celle de la couche (102) photoabsorbante, et la couche (103) de contact étant suffisamment épaisse pour absorber sensiblement toute la lumière dont la longueur d'onde est inférieure à la longueur d'onde correspondant à l'énergie de la largeur de bande de la couche de contact.
PCT/JP1999/005170 1998-09-29 1999-09-21 Photodiode et systeme de communication optique WO2000019543A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP10/291504 1998-09-29
JP10291504A JP2000114580A (ja) 1998-09-29 1998-09-29 フォトダイオードおよび光通信システム

Publications (1)

Publication Number Publication Date
WO2000019543A1 true WO2000019543A1 (fr) 2000-04-06

Family

ID=17769750

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP1999/005170 WO2000019543A1 (fr) 1998-09-29 1999-09-21 Photodiode et systeme de communication optique

Country Status (2)

Country Link
JP (1) JP2000114580A (fr)
WO (1) WO2000019543A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10069039B2 (en) 2015-09-21 2018-09-04 Toyoda Gosei Co., Ltd Light-emitting device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002094039A (ja) * 2000-09-20 2002-03-29 Fujitsu Ltd 受光装置及びその製造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03268523A (ja) * 1990-03-19 1991-11-29 Fujitsu Ltd 光モジュール
JPH053338A (ja) * 1991-06-25 1993-01-08 Hitachi Cable Ltd 受光素子
JPH0738205A (ja) * 1993-07-20 1995-02-07 Mitsubishi Electric Corp 面発光レーザダイオードアレイ及びその駆動方法，光検出素子，光検出素子アレイ，空間光接続システム，並びに波長多重光通信システム
JPH0786630A (ja) * 1993-09-17 1995-03-31 Hitachi Cable Ltd 単一波長受光素子
US5621238A (en) * 1994-02-25 1997-04-15 The United States Of America As Represented By The Secretary Of The Air Force Narrow band semiconductor detector
JPH10209483A (ja) * 1997-01-17 1998-08-07 Hitachi Cable Ltd 受光素子
JPH10233523A (ja) * 1997-02-18 1998-09-02 Hamamatsu Photonics Kk 光検出器

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03268523A (ja) * 1990-03-19 1991-11-29 Fujitsu Ltd 光モジュール
JPH053338A (ja) * 1991-06-25 1993-01-08 Hitachi Cable Ltd 受光素子
JPH0738205A (ja) * 1993-07-20 1995-02-07 Mitsubishi Electric Corp 面発光レーザダイオードアレイ及びその駆動方法，光検出素子，光検出素子アレイ，空間光接続システム，並びに波長多重光通信システム
JPH0786630A (ja) * 1993-09-17 1995-03-31 Hitachi Cable Ltd 単一波長受光素子
US5621238A (en) * 1994-02-25 1997-04-15 The United States Of America As Represented By The Secretary Of The Air Force Narrow band semiconductor detector
JPH10209483A (ja) * 1997-01-17 1998-08-07 Hitachi Cable Ltd 受光素子
JPH10233523A (ja) * 1997-02-18 1998-09-02 Hamamatsu Photonics Kk 光検出器

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10069039B2 (en) 2015-09-21 2018-09-04 Toyoda Gosei Co., Ltd Light-emitting device

Also Published As

Publication number Publication date
JP2000114580A (ja) 2000-04-21

Similar Documents

Publication Publication Date Title
US7184622B2 (en) Integrated volume holographic optical circuit apparatus
US8098969B2 (en) Waveguide optically pre-amplified detector with passband wavelength filtering
CA2562790C (fr) Circuits photoniques integres a grille de longueurs d'onde flottante sans refroidisseur pour reseaux a transmission par multiplexage par repartition en longueur d'onde
CN111146683B (zh) 基于硅光子的可调谐激光装置和其封装结构
US6392256B1 (en) Closely-spaced VCSEL and photodetector for applications requiring their independent operation
EP2386891B1 (fr) Circuit intégré photonique transparent
US6671438B2 (en) Optical waveguide, optical module, and their fabrication method
KR100871011B1 (ko) 파장 잠금 기능을 갖는 티오형 레이저 다이오드 패키지 및 그 패키지에 구비된 경사필터의 제작 방법
JP4301948B2 (ja) 調整可能な光学フィルタリング部品
WO2017015578A1 (fr) Circuit intégré photonique à semi-conducteurs composé avec guide d'onde diélectrique
JP2009522805A (ja) 集積フォトニックデバイス用のモニタ光検出器
TW201504599A (zh) 具有高對比光柵及可作爲雙重用途之高對比光柵垂直腔表面發射雷射檢測器之二維週期結構的極化無關光檢測器
JP4584066B2 (ja) 光感知器を備えた面発光レーザ素子及びこれを用いた光導波路素子
WO2011069225A1 (fr) Détecteur pré-amplifié optiquement à guide d'ondes à filtrage de longueur d'onde passe-bande
JP3111957B2 (ja) 面発光素子
US7412170B1 (en) Broad temperature WDM transmitters and receivers for coarse wavelength division multiplexed (CWDM) fiber communication systems
WO2000019543A1 (fr) Photodiode et systeme de communication optique
JP2953392B2 (ja) 面発光素子を用いた波長多重伝送方式
JPH11330532A (ja) モノリシック受発光素子および光通信システム
JPH11330535A (ja) フォトダイオードおよび光通信システム
US7248616B2 (en) Bidirectional transceiver and method for driving the same
WO2023119364A1 (fr) Dispositif optique
JP2953368B2 (ja) 光半導体集積回路
KR100750506B1 (ko) 광감지기를 구비한 표면방출레이저소자 및 이를 적용한광도파로 소자
JP2023165529A (ja) 光検出装置及び光レシーバ

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): KR US

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE

121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase