EP2510390A1 - Détecteur pré-amplifié optiquement à guide d'ondes à filtrage de longueur d'onde passe-bande - Google Patents

Détecteur pré-amplifié optiquement à guide d'ondes à filtrage de longueur d'onde passe-bande

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Publication number
EP2510390A1
EP2510390A1 EP09851946A EP09851946A EP2510390A1 EP 2510390 A1 EP2510390 A1 EP 2510390A1 EP 09851946 A EP09851946 A EP 09851946A EP 09851946 A EP09851946 A EP 09851946A EP 2510390 A1 EP2510390 A1 EP 2510390A1
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EP
European Patent Office
Prior art keywords
waveguide
filter
optical
wavelength
predetermined portion
Prior art date
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Withdrawn
Application number
EP09851946A
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German (de)
English (en)
Other versions
EP2510390A4 (fr
Inventor
Valery Tolstikhin
Fang Wu
Christopher Watson
Yury Logvin
Kirill Pimenov
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Onechip Photonics Inc
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Onechip Photonics Inc
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Publication of EP2510390A1 publication Critical patent/EP2510390A1/fr
Publication of EP2510390A4 publication Critical patent/EP2510390A4/fr
Withdrawn legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004—Combinations of two or more optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/131—Integrated optical circuits characterised by the manufacturing method by using epitaxial growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12107—Grating
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12109—Filter

Definitions

  • This invention relates to waveguide photonic devices and photonic integrated circuits and more specifically to waveguide optically pre-amplified detectors in III-V semiconductor materials.
  • optical transceivers which receive downstream signals on one wavelength and send upstream signals on another wavelength, both wavelengths sharing the same optical fiber, have to be deployed at every optical line terminal (OLT) / optical network unit (ONU). Therefore, cost efficiency and volume scalability in manufacturing of such components are increasingly major issues. It is broadly accepted within the telecommunication industry that optical access solutions are not going to become a commodity service, until volume manufacturing of the optical transceivers and other massively deployed optical components reaches the cost efficiency and scalability levels of consumer products.
  • InP PICs for use in the optical transmission systems remain indium phosphide (InP) and its related III-V semiconductors, since they, uniquely, allow for active and passive devices operating in the spectral ranges of interest for optical telecommunications to be combined onto the same InP substrate.
  • InP PICs perhaps, are the best hope for a cost-efficient and volume-scalable solution to the most massively deployed components: optical transceivers for the access passive optical networks operating in the 1.3 ⁇ and 1.5 ⁇ wavelength ranges, see for example V. Tolstikhin ("Integrated Photonics: Enabling Optical Component Technologies for Next Generation Access Networks", Proc. Asia Optical Fiber Communication & Optoelectronic Exposition & Conference, October 2007).
  • optical photodetector which converts the received optical signal to an electrical signal allowing for this received signal to be provided to the electrical equipment connected to the telecommunications network, be this a telephone with Voice-over-IP (VOIP), a computer, or a digital TV set-top box for example.
  • VOIP Voice-over-IP
  • Such photodetectors are designed as either PIN diodes with low reverse voltage bias, having a wide, lightly doped 'near' intrinsic semiconductor region between a p-type semiconductor and an n-type semiconductor region, or as avalanche photodiodes (APD) with high reverse voltage bias.
  • PIN diodes with low reverse voltage bias
  • APD avalanche photodiodes
  • the PIN diode is implemented within a waveguide structure resulting in waveguide photodetectors (WPD) which are compatible with the passive waveguide circuitry of PICs and thereby facilitate the monolithic integration of the photodetectors with passive wavelength demultiplexing and routing elements.
  • WPD waveguide photodetectors
  • ⁇ ⁇ ( ⁇ / ⁇ )
  • R the overall quantum efficiency
  • e the electron charge
  • % ⁇ is the photon energy.
  • optical gain before detection e.g. in a semiconductor optical amplifier (SOA), where the signal is amplified without leaving the optical domain, which is a waveguide -based solution compatible with the remainder of the PIC design and fabrication processes; hereafter to be referred to as an Optically Pre-Amplified Detector (OP AD).
  • SOA semiconductor optical amplifier
  • OP AD Optically Pre-Amplified Detector
  • the OP AD appears to be an appropriate PIC solution for a higher than e/ha> fiber-coupled responsivity, defined as the electric current delivered by the PIC into the receiver circuit relative to the optical power delivered by the optical signal to the PIC.
  • This solution has no specific speed limitation (unless the SOA is in a saturation regime and its optical gain is affected by the amplified optical signal) and is capable of providing end-to-end gain of several tens, thereby enabling superior gain-bandwidth product.
  • design of highly functional, PIC compatible OP AD devices has attracted a considerable interest in recent years.
  • Any integrated OP AD is, generically, a waveguide-based device, which combines a gain waveguide section (where optical amplification occurs) and a detection waveguide section (where optical conversion to the electrical domain occurs), which are optically connected by a passive waveguide delivering the optical signals to / from the two elements of the OP AD.
  • the monolithic integration of multiple waveguide devices, such as the optical amplifier (OA) and photodetector (PD) required for an OPAD, having different waveguide core regions made from different semiconductor materials can be achieved by essentially one of the three following ways:
  • direct butt-coupling which exploits the ability to perform multiple steps of epitaxial growth, including selective area etching and re-growth, to provide the multiple semiconductor materials, which are spatially differentiated horizontally with a common vertical plane across the PIC die and the different semiconductor materials are grown adjacent horizontally so that waveguides formed in each directly butt against one another to form the transition from one material to another;
  • modified butt-coupling which exploits selective area post-growth modification of semiconductor material, e.g. by means of quantum-well intermixing techniques, rather than etching and re-growth, to form the regions of required semiconductor material, also spatially differentiated in the common plane of vertical guiding across the PIC die;
  • direct butt-coupling allows for a planar integration with minimal vertical topology, which is an advantage from the planar technology point of view since no or minimal planarization is required in the processing of the PIC during fabrication.
  • direct butt-coupling requires multiple epitaxial steps to provide the multiple semiconductor materials, which not only creates difficulty in managing optical reflections from these material interfaces, but also significantly affects the fabrication yield and thereby significantly increases the cost of the final PIC devices.
  • Modified butt-coupling can, potentially, remove extra epitaxial steps and in this way improve the fabrication yield, but its capabilities are limited as concerns to the semiconductor material modifications possible: usually, only the bandgap of the quantum well layer(s) can be blue shifted up to some lOOnm, whereas other layers, e.g. heavily doped contact layers, which are needed in active waveguide sections but very undesirable in the passive waveguide sections because of the propagation loss they generate, remain intact.
  • the lower of two vertically coupled waveguides is a passive waveguide with the core layer bandgap well above the photon energy of the optical signals intended for the OP AD, allowing for a low-loss propagation
  • the upper of the two vertically coupled waveguides is a PIN structure with the intrinsic material bandgap close to that of the spectral range of the optical signal to be handled by the OP AD.
  • This upper waveguide is an active waveguide capable of both optical amplification (under forward electrical bias) or detection (under reverse electrical bias) over the spectral range of interest.
  • Optical coupling between the two waveguides can be implemented with optional lateral tapering to facilitate smooth and controllable vertical transitions for the guided optical signals.
  • the optical signal can be adiabatically transferred from the amplification waveguide section to the detection waveguide section via the passive waveguide section between the two, in which case the passive waveguide section absent the intrinsic active layers and upper contact layers but present the lower contact layers also serves as an electrical insulation between the forward (amplification) and reverse (detection) biased sections of the waveguide PIN.
  • Tolstikhin et al reporting a fiber-coupled responsivity 10 times greater than e/ ⁇ with a polarization sensitivity of less than 0.4dB over a 50nm wavelength bandwidth, with an injection current of approximately 150mA in the OP AD operating around 1490nm at room temperature.
  • Twin-guide integration of active and passive waveguides is the simplest and most common example of the evanescent-field based vertical integration, and can be implemented in a variety of forms, e.g. based upon phase matching in either a conventional directional coupler (DC), see for example Y. Suematsu, et al in "Integrated Twin-Guide AlGaAs Laser with Multihetero structure” (IEEE J. Quantum Electron., Vol. 1 1 , pp. 457-460, Jul. 1975); or a DC enhanced by an impedance matching layer between the coupled optical waveguides, see for example R. J. Deri, et al in "Impedance Matching for Enhanced Waveguide / Photodetector Integration” (App.
  • DC conventional directional coupler
  • Multi-guide vertical integration is an extension of this approach towards multi-functional PICs, wherein optical waveguides with different functions are vertically stacked in order of ascending waveguide bandgap wavelength and evanescent-field coupled with each other, while adiabatic transition between the vertically disposed waveguides are affected by lateral tapers defined at requisite vertical guiding levels and acting coherently with each other, see for example V. Tolstikhin, et al in "Laterally-Coupled DFB Lasers for One-Step Growth Photonic Integration in InP" (IEEE Photon. Technol. Lett. , Vol. 21 , pp. 621-623, May 2009); V.
  • a key feature of the MGVI approach that differentiates it from a consecutive twin-guide integration of the prior art described supra within the same multi-guide vertical stack is an ability for an optical signal in a multi-functional PIC having more than two vertically stacked and evanescent-field coupled optical waveguides to be adiabatically transferred between these waveguides with the aid of lateral tapers defined in at least some of the vertical guiding levels and, in use, acting coherently with each other.
  • This may be qualified as a parallel adiabatic transfer, opposite to a serial adiabatic transfer, in which no more than two vertically stacked guides are evanescent-field coupled simultaneously and if the PIC structure has more than two functions and hence more than two guiding vertical levels, the transition of the optical signals between them is achieved by consecutive transitions between two adjacent waveguides, to the exclusion of all the other guiding layers in the process.
  • An example of such parallel and serial approaches to an evanescent-field based integration in a multi-guide vertical stack are given by V. Tolstikhin et al. in US Patent 7,532,784 entitled “Integrated Vertical Wavelength (De)multiplexer” and S. Forrest et al. in US Patent 6,795,622 entitled “Photonic Integrated Circuits", respectively.
  • any OPAD device should, fundamentally, provide a gain-enhanced responsivity without significant deterioration of the signal to noise ratio.
  • the OPAD should ideally combine high gain with low noise.
  • ASE being inherent in optical amplifiers irrespective of design be it monolithic, such as an OPAD, hybrid, or fiber based, such as an Erbium Doped Fiber Amplifier (EDFA).
  • EDFA Erbium Doped Fiber Amplifier
  • io is the RMS noise current in a receiver circuit, generated by a device having similar PIN detector but no optical amplifier
  • the second term on the right hand side accounts for the excessive ASE related noise generated by the optical preamplifier, which results from a combination of the spontaneous-spontaneous and spontaneous-signal beatings, represented by the first and second terms in the parentheses on the right hand side of this equation, respectively (e.g. N. A. Ollson, J. Lightwave Technol., Vol. 7, PP. 1071-1082, Jul 1991).
  • ⁇ 0 is the responsivity relative to the optical power in front of the detection section
  • E A SE is the spectral density of the ASE power at the input of the detection section
  • B e is the receiver circuit bandwidth
  • B 0 « (cAA PBF )/ 2 is the frequency bandwidth equivalent to the optical wavelength passband ⁇ ⁇ in a transition from the amplification to the detection waveguide sections
  • G is the waveguide-referred aggregate gain
  • P is the time averaged waveguide-coupled optical power of the signal.
  • Equation (2) Equation (2)
  • Equation (3) the waveguide-coupled receiver sensitivity can be approximated as shown below in Equation (3) below to approximate the minimum o tical power, mi]
  • Equations (1) through (3) provide instructive insights on both the limits of OP AD performance and optimization.
  • At least part of the ASE noise, that associated with the spontaneous-spontaneous beatings, can be suppressed by inserting a wavelength filter between the amplification and detection sections of the OP AD sections, such that the filter's passband is wide enough to allow through all the signal wavelengths, but, at the same time, is narrower than the spontaneous-spontaneous beating bandwidth.
  • the optical signals in the predetermined narrow wavelength range pass through and are detected in the photodetector section, whereas the ASE noise does not. It can be re-routed away from the detection section of the OP AD, or absorbed within the intervening PIC circuitry before the detection section, or both, such that the OP AD noise related to ASE is limited to that in the intended wavelength range of the received signal.
  • the invention provides for an improvement in the OP AD performance by providing MGVI compatible design solutions featuring passband filtering between amplification and detection of the received optical signals.
  • the performance improvement is combined with the capabilities and advantages of the one-step epitaxial growth MGVI technique, thereby providing highly functional and low cost PIC solutions to OP AD based receivers for mass deployment, e.g. in the extended reach / increased split ratio PON's.
  • the object of the invention is an integrated OP AD design, compatible with the MGVI platform, that enhances the device performance by providing on-chip ASE filtering outside the signal wavelength range and, in this manner, reducing the impact of ASE related noise on the sensitivity of the OP AD based receiver, while providing greater than e / ⁇ receiver responsivity.
  • the ASE filtered OP AD being formed in the MGVI platform such that, in use, the amplification and detection waveguide sections are formed within the same wavelength-designated active waveguide layer while passive waveguide sections and elements of waveguide circuitry are defined within the passive waveguide layer, the passive waveguide layer positioned below the active waveguide layer in a multi-guide vertical stack, which also may comprise other wavelength-designated active and passive waveguide layers.
  • the passband wavelength filter may be implemented either internally within the MGVI structure or externally to the MGVI structure.
  • a photonic component comprising:
  • an epitaxial semiconductor structure grown in a III-V semiconductor material system in a single growth step upon a substrate comprising a common designated waveguide for supporting propagation of optical signals within a predetermined first wavelength range and at least one of a plurality of wavelength designated waveguides vertically disposed in order of increasing wavelength bandgap, each of the plurality of wavelength designated waveguides supporting a predetermined second wavelength range, each of the predetermined second wavelength ranges being within the predetermined first wavelength range;
  • an optical input port for receiving optical signals within the first wavelength range
  • a first filter comprising at least a first output port and a second output port and characterized by at least a first passband width, the filter optically coupled to the optical input port for receiving optical signals within the first wavelength range and for providing a first predetermined portion of the received optical signals to the first output port, the first predetermined portion of the received optical signals being determined in dependence upon at least the first passband width;
  • an optical amplifier comprising at least a gain section formed within the one of the plurality of wavelength designated waveguides, a first contact for forward biasing the optical amplifier, and a third output port, the optical amplifier optically coupled to the first output port for receiving the first predetermined portion of the received optical signals and providing amplified filtered optical signals to the third output port;
  • a second filter comprising at least a fourth output port and a fifth output port and characterized by at least a second passband width, the filter optically coupled to the third output port of the optical amplifier and for providing a first predetermined portion of the amplified filtered optical signals to the fourth output port and a second predetermined portion of the amplified filtered optical signals to the fifth output port, the first and second predetermined portions of the amplified filtered optical signals being determined in dependence upon at least the second passband width;
  • a first photodetector optically comprising at least a second contact for reverse biasing the first photodetector, the first photodetector being coupled to the fourth output port of the second filter for receiving the first predetermined portion of the amplified filtered optical signals;
  • a third photodetector optically coupled to the second output port of the first filter for receiving a predetermined portion of optical signals propagating from the optical amplifier to the first filter, the predetermined portion of the optical signals determined in dependence upon at least the first passband width;
  • the first contact and second contact are formed upon the same layer of the epitaxial semiconductor structure but are electrically isolated from one another.
  • photonic component comprising:
  • a first filter comprising at least a second output port and characterized by at least a first passband width, the filter optically coupled to the first output port of the optical amplifier and for providing a first predetermined portion of the amplified optical signals to the second output port, the first predetermined portion of the amplified optical signals being determined in dependence upon at least the first passband width; e) a first photodetector optically comprising at least a second contact for reverse biasing the first photodetector, the first photodetector being coupled to the second output port of the first filter for receiving the first predetermined portion of the amplified optical signals;
  • the first contact and second contact are formed upon the same layer of the epitaxial semiconductor structure but are electrically isolated from one another.
  • Figure 1A depicts an OP AD according to the prior art of Tolstikhin et al in "Optically Pre- Amplified Detectors for Multi-Guide Vertical Integration in InP" (Proc. IPRM 2009);
  • Figure IB depicts a schematic of the functionality provided by the prior art of Tolstikhin in respect of an OP AD;
  • Figure 2 depicts the Q factor for an OP AD receiver versus optical gain with varying filter bandwidth;
  • Figure 3 depicts a schematic of the functionality provided by the invention;
  • Figure 4A depicts an OP AD according to an embodiment of the invention wherein wavelength filtering is achieved through a reflective interface and thin-film filter with a waveguide interface at the circuit edge;
  • Figure 4B depicts an OP AD according to an embodiment of the invention wherein wavelength filtering is achieved through a reflective interface and thin-film filter in conjunction with a multimode interference coupler;
  • Figure 4C depicts an OPAD according to an embodiment of the invention wherein wavelength filtering is achieved through a reflective interface and thin-film filter with waveguide horns;
  • Figure 5 depicts an OPAD according to an embodiment of the invention wherein wavelength filtering is achieved through a multimode interference filter employed within the passive waveguide layer;
  • Figure 6 depicts an OPAD according to an embodiment of the invention wherein wavelength filtering is achieved through a grating assisted lateral directional coupler formed within the passive waveguide layer;
  • Figure 7 depicts an OPAD according to an embodiment of the invention wherein wavelength filtering between the optical amplifier and photodetector is achieved through a grating assisted coupling structure and a second grating assisted coupling structure couples a corresponding filtered broadband noise signal from the front facet of the optical amplifier to a monitoring photodetector.
  • the present invention is directed to an integrated optically pre- amplified detector (OPAD) with a passband wavelength filter between amplification and detection sections of the device, which filter is intended to reduce an impact of amplified spontaneous emission generated in the amplification section of the device on broadband noise generated in the detection section of the device, thereby enhancing signal to noise ratio in and improving performance of an optical receiver featuring optically pre-amplified detector.
  • OPD optically pre- amplified detector
  • references to optical waveguides are made typically by reference to etched ridge waveguide structures and identified by the ridge element in the uppermost layer of each etched ridge waveguide structure. Such referencing is intended to simplify the descriptions rather than implying the optical waveguide of any element solely comprises the upper etched ridge element identified. The scope of the present invention as one skilled in the art would appreciate is not intended to be limited therefore to such etched ridge waveguides as these represent only some of the possible embodiments.
  • FIG. 1A there is depicted an integrated OP AD 100A according to the prior art of V. Tolstikhin et al in "Optically Pre- Amplified Detectors for Multi-Guide Vertical Integration in InP" (Proc. IPRM 2009).
  • OP AD 100A comprises passive and active waveguides, being depicted by structures 1 10 and 120 respectively, which are vertically stacked with respect to each other such that the passive waveguide 110 is below and is designed to be transparent in the designated wavelength range of the upper active waveguide 120. Laterally, the waveguides are defined by etching a shallow ridge for the passive waveguide 1 10 and a deep ridge for active waveguide 120.
  • the terms “shallow” and “deep” ridge hereafter being used to identify ridge waveguide designs with the etch stopping above and going through the guiding layer, respectively.
  • the deep etched active waveguide 120 actually forms a mesa, with N-contacts 130 to the active waveguide PIN structures deposited aside from the mesa, on the passive waveguides' 1 10 top surface.
  • the P-contact being formed at the mesa's top surface, being the upper surface of active waveguide 120.
  • an electrical insulation between the amplification section 140 and detection section 150 of the active waveguide PIN, which are forward and reverse biased respectively, while sharing the common ground, i.e. the N-contact is achieved by etching away material of the mesa between these two sections.
  • a similar design approach as discussed supra being reported by S. Forrest et al in US Patent 6,795,622 entitled "Photonic Integrated Circuits”.
  • circuit 100B comprising optical gain block 180 and photodetector 190.
  • An optical signal at wavelength A s is fed into the circuit 100B from optical input 170 and coupled to the optical gain block 180.
  • an amplified optical signal at wavelength s is propagated forward to the photodetector 190 via transition block 185 which represents the effect of the two optical transitions between the active and passive waveguides.
  • Also coupled from the optical gain block 180 are forward and backward propagating ASE signals to the optical input 170 and photodetector 190 respectively, these ASE signals having a wavelength spectrum X ASE .
  • the forward propagating ASE signal propagates essentially unaffected in respect of wavelength spectrum through the two optical transitions between the active and passive waveguides albeit with reduced optical power due to the insertion losses of these interfaces (typically 0.5dB - l .OdB each as reported by V. Tolstikhin et al in "Optically Pre-Amplified Detectors for Multi-Guide Vertical Integration in InP” (Proc. IPRM 2009, pp. 155-158, Newport Beach, 2009).
  • the filter passband ⁇ ⁇ should be narrower than the ASE spectrum width under operating conditions, ⁇ ⁇ 5 ⁇ , but wider or equal to the wavelength range width of the pre-amplified optical signal, s .
  • the ASE spectrum width is wider than 50nm and possibly exceeds lOOnm, while the signal wavelength range width is usually narrower, e.g. 20nm in the case of EPON or GPON ONU data receivers or lOnm in the case of GPON ONU video receivers, leaving some room for a designer to squeeze within the inequality s ⁇ PBF ⁇ ⁇ ⁇ 5 ⁇ by a proper choice of the filter passband width.
  • both the signal and ASE will be transmitted from the amplification into detection section of the OP AD, whereas all the wavelengths outside the passband will be rejected and hence will not contribute to the receiver noise.
  • the Front PBF 320 has a wavelength passband width AA PBF , such that it includes all the signal wavelengths, and thereby transmits the incoming optical signals into the amplification section (Gain Element) 330. Wavelengths outside the passband range AA PBF are rejected and re-routed to Absorber 350, where the optical signals they bear are absorbed and thereby prevented from propagating further into OP AD 300. Since the Front PBF 320 has to transmit all the incoming optical signals to Detector Element 360, AA PBF should include all the signal wavelengths, i.e. AA PDBF ⁇ A s .
  • the incoming optical signals are amplified in the Gain
  • AA PBF should include all the signal wavelengths, i.e. AA B PDBF ⁇ A s and, preferably, exclude all the wavelengths outside the signal wavelength range ⁇ 3 , i.e. AA PDBF « A s in the optimum design.
  • the Gain Element 330 also generates undesired ASE, which is denoted by adding an ASE Element 380 in parallel with the Gain Element 330 in a block-diagram presented in the Figure 3.
  • This ASE is characterized by a wavelength range X ASE , which basically overlaps with the net gain range X G of the Gain Element 330, and propagates both forward and backwards from the ASE Element 340 within the OP AD 300.
  • the effect of the Back PBF 350 on the receiver noise is estimated as a reduction of the ASE- ASE beating contribution to the broadband noise by the factor of ⁇ AX ASE / AX ⁇ BF ⁇ JAX ASE /AX S . It may be significant, thereby improving the OP AD 300 performance, if AX ASE » AX S , e.g. in the devices with a broad gain spectrum and narrow signal wavelength range, but if, otherwise, AX ASE ⁇ X S , ASE filtering does not really improve the OP AD performance and hence makes no sense.
  • the block-diagram of the OP AD 300 with ASE filtering represents the most generic solution and approach to the problem, which is not limited to any specific OP AD design, nor does it depend on the design of the PBF elements and the re-routing waveguide elements.
  • Embodiments presented below in respect of Figures 4 through to Figure 7, represent some particular designs of the Back PBF 360 element described supra in respect of OP AD 300 of Figure 3. These being implementable using a range of optical waveguide circuit elements and arrangements. These waveguide circuits and arrangements are embodiments for illustration only and do not represent all potential embodiments which lie within the scope of the claims.
  • a Thin-Film Filter provides the required passband filtering within the OP AD.
  • the TFF is designed as a reflective filter for the signal wavelength range s and a transmitting filter for ASE wavelengths outside this range, ASE ⁇ X PBF _ Lower and X ASE > X PBF _ Upper , where X PBF _ Lower and X PBF _ Upper represent the lower and upper wavelength limits of the PBF provided by the TFF which may be set to the signal wavelength range X s or toleranced to allow for environmental effects such as temperature.
  • the TFF employs, for example, a multiple layer dielectric stack design (see for example JDS Uniphase Interference Filter Handbook, 2 nd Edition, 2007).
  • OP AD 400A comprises optical substrate 410 upon which a MGVI waveguide structure has been grown and patterned, not references explicitly for clarity.
  • a first passive waveguide 41 1 receives an amplified optical signal from an amplification section 412 which comprises both passive and waveguide layers of the MGVI which receives an incoming signal from second passive waveguide 410.
  • Amplification section 412 is shown schematically and is not intended to reflect the actual active-passive waveguide integration within MGVI platform which would be obvious to one skilled in the art.
  • the optical signals within predetermined wavelength range X s are reflected from the TFF 413 and then coupled to a third passive waveguide 414, which is optically connected to the detection section 415 of the OP AD 400A.
  • the detection section 415 is depicted schematically and is not intended to reflect the actual active-passive waveguide integration within an MGVI platform. All the wavelengths outside the predetermined wavelength range s are transmitted through the TFF 413 and accordingly out of the PIC comprising OP AD 400A.
  • a photodetector (not shown for clarity within this schematic sketch) may be provided behind TFF 413 to measure transmitted light outside the signal wavelength range, which is the forward ASE light, thereby providing a gain control of the amplification section of the OP AD 400 A, as per block-diagram of OP AD 300 in Figure 3 supra.
  • the design of the TFF 413 at the back facet 416 of the OP AD 400A should be adjusted to the angle of incidence of the first passive waveguide 411 such that the optical signals within the target wavelength range s are coupled into the second passive waveguide 414 after have been reflected by the TFF 413.
  • TFF designs which are intended for approximately normal (i.e. 0 degree) incidence, e.g. such as outlined by D.H. Cushing in US Patent 6,011,652 entitled "Multi-Layer Thin Film Dielectric Bandpass Filter” and P.J. Gasoli in U.S.
  • Patent 5,179,468 entitled “Interleaving of Similar Thin-Film Stacks for Producing Optical Interference Coatings” the TFF 413 is to be designed to operate with a larger angle of incidence, which still remains smaller than that corresponding to the angle of total internal reflection in the wavelengths outside the pre-determined wavelength range
  • the actual implementation is rather tricky, e.g. in part it requires a precise cleaving of the facet to be coated with the TFF 413, in a position pre-determined by the layout of the first and second passive waveguides, 411 and 414, respectively. If the precise cleaving, within a tolerance comparable to the waveguide width, i.e. on a micron scale in a case of typical shallow etched ridge waveguides in InP based materials operating in 1.3 ⁇ or 1.5 ⁇ wavelength ranges, is not an option, then certain design modifications can be implemented to mitigate the cleave tolerance.
  • Figure 4B presents another embodiment according to the invention for an OP AD 400B featuring a TFF 425 at the device facet, where mitigation of the cleave tolerance is achieved by inserting a two-port multi-mode interferometer (MMI) 421 between the first and second passive waveguides, 422 and 423 respectively, and device facet 424 with TFF 425.
  • MMI multi-mode interferometer
  • First passive waveguide 422 couples signals from the amplification section 426 to the MMI 421
  • second passive waveguide 423 couples the filtered signals from the MMI 421 to the detection section 427.
  • performance of the MMI 421, featuring input port 421 A and output port 42 IB at the same facet is equivalent to that of an MMI having double the length of MMI 421 with the input and output ports at the opposite facets (such a transmissive MMI not being shown in Figure 4B).
  • the design techniques exploiting the MMI 421 thereby enable increased tolerance of the two-port MMI to the length of the MMI 421 are well known and, in effect, reduced to providing a flat top passband in a port-to-port transmission spectrum, see for example L. Soldano et al in "Optical Multi-Mode Interference Devices Based on Self-Imaging: Principles and Applications” (J. Lightwave Tech., Vol. 13, No. 4, pp 615-627, April 1995).
  • Patent 5,179,468 entitled “Interleaving of Similar Thin-Film Stacks for Producing Optical Interference Coatings”.” It would be appreciated by one skilled in the art that the MMI 421 may also be designed to provide at least some aspect of wavelength filtering to act in a combination with the TFF 424.
  • the TFF 425 may be provided as a discrete TFF element which is bonded to the device facet 424 or that it may be deposited onto the device facet 424.
  • a third output optical port may also be added to the MMI 421 and, accordingly, a third passive waveguide disposed that would lead to a second detection section, in use, acting as a monitor, such as Monitor Element 380 of Figure 3 supra, to provide a gain control loop to the amplification section 426 of the OP AD 400B, these elements not shown in Figure 4B for clarity.
  • the equivalent optical circuit of the resulting PIC reproduces that of the back end of the generic OP AD 300 given in Figure 3 supra, with the TFF 425, and optionally, MMI 421 serving as the Back PBF 360 and two detection sections of the active waveguide as Detector Element 370 and Monitor Element 380.
  • the tree-port MMI now has to transmit the optical signals in the wavelength range ⁇ 3 to the output passive waveguide connected to a first detection section of the active waveguide, namely detection section 427 acting as the Detection Element 370, and the ASE light in the wavelengths outside the wavelength range A s is coupled to another passive waveguide section leading to a second detection section of the active waveguide, operating as a Monitor Element 380.
  • first and second passive waveguides 431 and 432 coupling optical signals from the amplification section and to the detection section respectfully, and not shown for clarity, are equipped with planar focusing elements 433 and 434, e.g. such as those described by W.K. Burns et al in "Optical Waveguide Parabolic Coupling Horns” (Appl. Phys. Lett. Vol. 30, pp 28-30, Jan 1 1977).
  • planar focusing elements 433 and 434 are intended to provide a parallel optical beam at the exit of the ridge waveguide into the slab waveguide 435, thereby reducing the beam divergence in the plane of the waveguide core.
  • planar focusing elements 433 and 434 do not need to be identical and, quite opposite, it is perfectly conceivable that they have different shapes, e.g.
  • the launching planar focusing element 433 at the end of the first passive waveguide 431, which is concatenated to the amplification section of the OP AD 400C, and not shown in Figure 4C, can be designed to provide a parallel beam at small incident angle
  • the collecting planar focusing element 434 at the start of the second passive waveguide 432, which leads to the detection section of the OP AD 400C, similarly not shown in Figure 4C can be optimized for coupling a wider and diverging two- dimensional optical beam, i.e. in a direction perpendicular to the plane of the Figure 4C, light is confined in and around the passive waveguide core.
  • the ASE light propagating through the TFF may optionally be monitored by providing a detector behind the TFF, thereby allowing control of the gain in the amplification section of the OP AD.
  • This additional TFF may be disposed externally to the MGVI structure or alternatively wherein the TFF is disposed within a groove formed within the MGVI structure it may be disposed externally with a waveguide interconnection, for example a planar waveguide structure, or disposed within an additional feature implemented within the MGVI structure.
  • transmissive TFF elements may be implemented within embodiments according to the invention by appropriate placement of the Detector Element 370 with or without the Monitoring Element 380 in relation to the transmissive TFF with or without planar waveguide elements between.
  • FIG. 5 there is shown a schematic of an OP AD 500 according to an embodiment of the invention, as outlined schematically in Figure 3 supra, which includes an amplification section 510 (Gain Element 330 in Figure 3) and a detection section 520 (Detector Element 360 in Figure 3).
  • ASE filtering is achieved by inserting an MMI 530, acting as Back PBF 360, with associated first and second passive waveguides 530 and 540 between the active waveguide sections 515 and 525 respectively providing the amplification section 510 and detection section 520.
  • this integrated component OP AD 500 comprises a substrate 505 upon which an MGVI structure has been grown and processed, not identified explicitly for clarity.
  • the MGVI structure and guided optical signal propagation therein e.g. lateral taper assistant vertical transitions between the passive and active waveguides, being similar to that reported by V. Tolstikhin et al in "Optically Pre-Amplified Detectors for Multi-Guide Vertical Integration in InP” (Proc. Indium Phosphide and Related Materials 2009 Conference, pp. 155-158, Newport Beach, 2009).
  • OP AD 500 differs from this prior art in that now an MMI 530 has been incorporated into the section of passive waveguide between the amplification and detection sections 510 and 520 respectively of the active waveguide, wherein the MMI 530 is defined on the same vertical layer as the passive waveguides, as illustrated by Figure 5. .
  • the two-port MMI 530 is designed to operate as an optical passband filter, in accordance with the general description of the invention referring to Figure 3. It receives amplified optical signals in the predetermined wavelength range X s , along with ASE light in the wavelength range ASE , which is usually broader than the signal range s .
  • the passive waveguide layer in the MGVI optimized for an efficient and controllable passive-active vertical coupling is also suitable for the required MMI passband filtering, by appropriate selection of the MMI shape and size, as well as adjusting the layout of the passive waveguides coming in and out of MMI filter.
  • a second output optical port may be added to the MMI 560 and, accordingly, a second passive waveguide disposed that would lead to a second detection section, in use, acting as the Monitor Element 380 to provide a gain control loop to the amplification section of the OP AD, not shown for clarity in Figure 5.
  • the equivalent optical circuit of an integrated component reproduces that of the back end of the generic OP AD given in Figure 3, with MMI 530 serving as a Back PBF 350 and two detection sections of the active waveguide as Detector Element 360 and Monitor 370, respectively.
  • the tree-port MMI now has to transmit the optical signals in the wavelength range s to the output passive waveguide connected to the first detection section of the active waveguide, acting as Detector Element 360, and the ASE light in the wavelengths outside the wavelength range A s - to the passive waveguide leading to the second detection section of the active waveguide, operating as Monitor 370.
  • FIG. 6 there is shown a schematic of an OP AD 600 according to an embodiment of the invention, as outlined schematically in Figure 3 supra, which includes an amplification section 610 (Gain Element 330 in Figure 3) and a detection section 620 (Detector Element 360 in Figure 3).
  • ASE filtering is achieved by inserting a grating assisted directional coupler 650, acting as Back PBF 360, with associated first and second coupler waveguides 630 and 640 respectively between the amplification section 610 and detection section 620.
  • the first and second coupler waveguides 630 and 640 each respectively having formed on their upper surface first and second gratings 635 and 645 such that the overall combination acts as grating assisted directional coupler 650.
  • this integrated component OP AD 600 comprises a substrate 605 upon which an MGVI structure has been grown and processed, not identified explicitly for clarity.
  • OP AD 600 differs from this prior art in that now a grating assisted directional coupler 650 has been incorporated into the section of passive waveguide between the amplification and detection sections 610 and 620 respectively of the active waveguide, wherein the grating assisted directional coupler 650 is defined on the same vertical layer as the passive waveguides, as illustrated by Figure 6.
  • the grating assisted directional coupler 650 is designed to operate as an optical passband filter, in accordance with the general description of the invention referring to Figure 3. It receives amplified optical signals in the pre-determined wavelength range ⁇ 5 , along with ASE light in the wavelength range ASE , which is usually broader than the signal range s .
  • the passive and active waveguide layers within the MGVI which are optimized for an efficient and controllable passive-active vertical coupling are also suitable for the required grating assisted directional coupler filtering, by appropriate selection of the grating structure, directional coupler waveguides, coupler transfer characteristic as well as appropriate design and adjustment of the layout of any passive waveguide sections disposed between the grating assisted directional coupler 650 and the amplification and detection sections 610 and 620, such passive waveguide sections not being shown within Figure 6.
  • a second output passive optical waveguide may be added to the output of the first coupler waveguide 630, and accordingly, when appropriately disposed would lead to a second detection section, which in use, acts as the Monitor Element 380 to provide a gain control loop to the amplification section of the OP AD, not shown for clarity in Figure 6.
  • the equivalent optical circuit of an integrated component reproduces that of the back end of the generic OP AD given in Figure 3, with grating assisted directional coupler 650 serving as a Back PBF 350 and the two detection sections of the active waveguide as Detector Element 360 and Monitor 370, respectively.
  • the three—port directional coupler now has to transmit the optical signals in the wavelength range X s to the output passive waveguide connected to the first detection section of the active waveguide, acting as Detector Element 360, and the ASE light in the wavelengths outside the wavelength range ⁇ 5 - to the passive waveguide leading to the second detection section of the active waveguide, operating as Monitor 370.
  • FIG. 7 there is shown a schematic of an OP AD 700 according to an embodiment of the invention, as outlined schematically in Figure 3 supra, which includes an amplification section 730 (Gain Element 330 in Figure 3), a detection section 750 (Detector Element 360 in Figure 3), and a monitoring section 745.
  • ASE filtering for the detection section 750 is achieved by inserting a first grating assisted coupler 740, acting as Back PBF 360 whilst ASE filtering back into the optical network to which OP AD 700 is connected is achieved by inserting a second grating assisted coupler 725, acting as Front PBF 320.
  • this fully integrated implementation for OP AD 700 comprises a substrate 705 upon which an MGVI structure has been grown and processed, not identified explicitly for clarity.
  • OP AD 700 differs from this prior art in that now a second grating assisted coupler 725 has been incorporated into the section of passive waveguide the input 710 and the amplification section 730 and a first grating assisted coupler 740 has been inserted between the amplification and detection sections 730 and 750 respectively of the active waveguide, wherein the first and second grating assisted couplers 740 and 725 respectively are defined on the same vertical layer as the passive waveguides, as illustrated by Figure 7.
  • Each of the first and second grating assisted couplers 740 and 725 respectively are designed to operate as optical passband filters, in accordance with the general description of the invention referring to Figure 3.
  • the first grating assisted coupler 740 receives amplified optical signals in the pre-determined wavelength range s , along with ASE light in the wavelength range ASE , which is usually broader than the signal range A s from the amplification section 730. It transmits, however, to a first output port only those wavelengths in the range ⁇ ⁇ , which, coincides with the signal wavelength range s , such that these wavelengths enter the detection section 750 of the OP AD 700 and its active waveguide section, not identified explicitly for clarity.
  • optical signals outside the range ⁇ ⁇ are transmitted to a second output port of the first grating assisted coupler 740 such that these signals enter the monitoring section 745 of the OP AD 700 and its active waveguide section, not identified explicitly for clarity.
  • These optical signals outside the range ⁇ ⁇ propagating first within the passive waveguide between the first grating assisted coupler 740 and the monitoring section 745 before being vertically transferred into the active waveguide of the monitoring section 745 with assistance of vertical tapers defined at both the passive and active waveguide levels.
  • optical signals entering OP AD 700 are coupled at input 710 to an input passive waveguide 715 and are then coupled into the second grating assisted coupler 725 which has been incorporated between the input passive waveguide 715 and the amplification section 730.
  • second grating assisted coupler 725 receives optical signals from the preceding optical network in the predetermined wavelength range ⁇ 8 , along with any out of band signals. It transmits, however, to a first output port only those wavelengths in the range PBF , which, coincides with the signal wavelength range s , such that these wavelengths enter the amplification section 730 of the OP AD 700 and its active waveguide section, not identified explicitly for clarity. Any signals received from the preceding optical network are coupled to the other output of the second grating assited coupler 725 and are not coupled to the amplification section 730.
  • the amplification section 730 emits ASE bidirectionally and accordingly if the optical input 710 was connected directly to the amplification section 730 this ASE is coupled directly back into the preceding optical network where it may or may not be subject to filtering and attenuation prior to being launched into the main optical telecommunications network.
  • OP AD 700 contains second grating assisted coupler 725. As such by reciprocity it transmits to the input passive waveguide 715 that portion of the ASE that is within the wavelength range, A PBF , which, coincides with the signal wavelength range X s , such that these wavelengths enter the input passive waveuide 715 and then are coupled into the preceding optical network.
  • ASE outside of X PBF is coupled to the other output of the second grating assisted coupler 725 and is coupled to reverse monitoring section 735.
  • OP AD 700 provides a monolithic implementation of the general description of the invention of Figure 3.
  • the signal from reverse monitoring section 735 may be combined with that from monitoring section 745 to provide control of either the amplification section 730 alone or the overall OP AD 700.
  • first and second grating assisted couplers 725 and 740 have been presented as having the same passband, namely X PBF .
  • amplification section 730 and detection section 750 it may be advantageous to design these with differing performance characteristics, which may include passband width, isolation etc.
  • the design of OP AD 700 as presented has the input passive waveguide 710, amplification section 730, and detection section 750 formed within the same continuous passive waveguide.
  • the design may be adjusted such that desired optical signals, ⁇ 3 within P BF , are within each directional coupler crossed-over, so called cross state, rather than straight-through, so called bar state.
  • one directional coupler may be designed to be in the bar state and the other directional coupler within the cross state. In each case the detection and monitoring sections 750 and 745 respectively would be juxtaposed as required.
  • each grating assisted coupler has been presented as a co-propagating directional coupler such that optical signals propagate from one end of the directional coupler to the other.
  • the design may be implemented as a contra-propagating directional coupler such that the filtered optical signals are not only coupled into the other arm of the directional coupler but are also reflected such that they are coupled from the same end of the directional coupler as the input.
  • each of the outputs at the other end of the directional coupler contains unwanted signals and may each be coupled to discrete photodetectors, i.e. duplicate monitoring sections 745 or reverse monitoring sections 735, or a single large photodetector coupled to both. If implemented within the first grating assisted coupler 740 then the position of detection section 750 would also be adjusted.
  • the wavelength filtering elements represent only two of the possible embodiments for wavelength filtering elements possible within PICs.
  • the wavelength filtering may include other structures, including but not limited to, Mach-Zehnder interferometers (MZI), echelle gratings, directional couplers, and array waveguide gratings (AWG).
  • MZI Mach-Zehnder interferometers
  • echelle gratings echelle gratings
  • directional couplers directional couplers
  • AWG array waveguide gratings
  • transmissive waveguide filtering elements such as MMI 530 and grating assisted directional coupler 670 alternate design options exist including reflective filtering elements which can be employed with commensurate placement of detector elements etc.
  • both PBFs may be implemented using a single TFF or dual TFFs.
  • the particular implementation being determined for example by factors including but not limited to, the wavelength filtering requirements of the standard or system with which the OP AD is intended to operate, performance constraints of other PIC functions within the PIC of which the OP AD forms part, cost, footprint, performance etc.

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Abstract

L'invention porte sur un agencement photonique intégré, lequel agencement peut être mis en œuvre dans une structure à intégration verticale à guides multiples (MGVI) constituée par des semi-conducteurs III à V et que l'on a fait croître en un cycle de croissance épitaxiale, afin de permettre l'intégration de structures d'amplificateur optique à semi-conducteurs (SOA) et de photodétecteur à région de type P région intrinsèque - région de type N (PIN) à l'intérieur d'un guide d'ondes à longueur d'onde désignée commun parmi la pluralité de guides d'ondes à longueur d'onde désignée verticalement intégrés formant la structure MGVI. L'intégration comprend un filtre de longueur d'onde intégré entre le SOA et la PIN de façon à réduire un bruit à l'intérieur de la PIN venant d'une erreur d'échantillonnage moyenne (ASE) générée par le SOA. Dans des exemples de modes de réalisation de l'invention, le filtre de longueur d'onde est intégré dans la structure MGVI soit à l'intérieur d'un guide d'ondes à longueur d'onde désignée commun, soit à l'intérieur du guide d'ondes à longueur d'onde désignée. De plus, dans d'autres modes de réalisation, le filtre de longueur d'onde est constitué par un filtre à film mince butant contre une facette de l'agencement photonique intégré, dans lequel des signaux optiques sont couplés par des guides d'ondes optiques et/ou des éléments optiques additionnels tels qu'un dispositif à interférence multimode.
EP09851946.5A 2009-12-10 2009-12-10 Détecteur pré-amplifié optiquement à guide d'ondes à filtrage de longueur d'onde passe-bande Withdrawn EP2510390A4 (fr)

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EP2985645B1 (fr) * 2014-08-13 2019-10-16 Caliopa NV Procédé de production d'un circuit optique intégré
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EP3548963B1 (fr) 2016-12-02 2022-08-03 Rockley Photonics Limited Dispositif de guide d'ondes et procédé de dopage d'un dispositif de guide d'ondes
WO2018100157A1 (fr) 2016-12-02 2018-06-07 Rockley Photonics Limited Dispositif optoélectronique à guide d'ondes
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