WO2000002006A2 - Verfahren zum einstellen der magnetisierung der biasschicht eines magneto-resistiven sensorelements, demgemäss bearbeitetes sensorelement oder sensorelementsystem sowie zur durchführung des verfahrens geeignetes sensorelement und sensorsubstrat - Google Patents
Verfahren zum einstellen der magnetisierung der biasschicht eines magneto-resistiven sensorelements, demgemäss bearbeitetes sensorelement oder sensorelementsystem sowie zur durchführung des verfahrens geeignetes sensorelement und sensorsubstrat Download PDFInfo
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- WO2000002006A2 WO2000002006A2 PCT/DE1999/002017 DE9902017W WO0002006A2 WO 2000002006 A2 WO2000002006 A2 WO 2000002006A2 DE 9902017 W DE9902017 W DE 9902017W WO 0002006 A2 WO0002006 A2 WO 0002006A2
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/30—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring angles or tapers; for testing the alignment of axes
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
Definitions
- the invention relates to a method for adjusting the magnetization of the bias layer of a magneto-resistive sensor element, the bias layer being part of an AAF system (artificial-antiferro magnetic system) consisting of at least the bias layer, a flux guide layer and an arranged between them coupling layers coupling both layers antiferromagne- tically.
- AAF system artificial-antiferro magnetic system
- Such sensor elements are used, for example, in magnetoresistive angle detectors. These sensors are based on the two opposing magnetizations of the bias and the flux guiding layer with a strong antiferromagnetic coupling. These two layers behave as a rigid unit that can hardly be influenced by external fields. In contrast, the magnetic measuring layer is soft magnetic and its magnetization is aligned parallel to the external field. The angle between the magnetizations in the bias and measuring layer magnetization and thus the resistance of the sensor element is determined via the external magnetic field. To determine the influence of temperature on sensor systems, of which four sensor elements for a 180 ° angle detector and for a 360 ° -
- sensor elements are required to be able to compensate as far as possible, they are connected in the manner of a Wheatstone bridge.
- Layer structure and the layer structure are identical.
- magnetization of the bias layers of two elements within the sensor system comprising four sensor elements is opposite to the other two elements.
- a half bridge only requires two elements with opposite bias magnetizations. This applies regardless of whether the sensor system is formed on a common substrate or whether it is formed by means of individual separate sensor elements.
- this requires a complex conductor guide. Otherwise, the respective setting fields for the entirety of the sensor elements are not uniform.
- the invention is therefore based on the problem of specifying an alternative setting method for this, which enables simple setting of the bias magnetization of an individual sensor element or of sensor elements of a sensor system.
- a method of the type mentioned at the outset is characterized by the following steps:
- the setting is therefore carried out at a predetermined elevated or lowered temperature.
- the bias layer and the flux guide layer or their magnetization have different temperature behavior due to an asymmetry between the layers. If the sensor element is brought to the predetermined temperature, the saturation magnetization, the coercivity or the anisotropy of one layer changes more than the other. This leads to the fact that, after the setting field has been switched off, the magnetization of the layer, in which e.g. the saturation magnetization has changed significantly as a result of the temperature change, m aligns the opposite direction, as will be described in more detail below. It is therefore possible to achieve the setting by appropriate temperature control.
- the advantages of the method according to the invention are particularly evident when at least two sensor elements that are to be set at the same time are present, the magnetization of the bias layer of the two sensor elements or, in the case of more than two sensor elements, the magnetization of part of the sensor elements being directed opposite to that of the other should be.
- the saturation magnetization or the ratio of the saturation magnetization of the individual layers changes only in the case of the heated sensor elements. If the setting field is applied, the magnetization is reversed accordingly only for the temperature-influenced sensor elements, for the sensor elements, the are not influenced by temperature and where the saturation magnetization is unchanged, the bias magnetization does not reverse.
- the senor elements can be locally heated or cooled according to the invention.
- the heating is advantageously carried out by means of currents which are conducted in a pulsed manner via the sensor element or sensors, as a result of which local heating can be achieved with particular advantage in the case of sensor elements arranged on a common substrate, which will be discussed below.
- the switch-off time for the setting field should be earlier than the point in time when the temperature goes through a critical value when returning to the working temperature, at which the asymmetry obtained as a result of the temperature increase is just still present.
- the reversal of the magnetization according to the proposed method is based on the fact that the layers of the treated sensor elements show a different temperature behavior at the selected setting temperature.
- the temperature to which the sensor elements are heated or cooled should expediently be outside and higher or lower than the temperature range within which the sensor element or sensors can be operated in order not to reverse the previously achieved effect when the sensor elements are in operation.
- the subsequent heating temperature of the respective sensor element (s) can be within the temperature range or outside and higher than the temperature range within which the sensor element (s) can be operated.
- the invention further relates to a sensor element or a sensor element system comprising a plurality of sensor elements, the bias layer of the sensor element or elements being set according to the method described above.
- a sensor element system designed accordingly with two, three or four sensor elements or a multiple thereof, the four or in each case two, three or four sensor elements can form a Wheatstone bridge.
- the invention further relates to a sensor element itself with at least one bias layer which is part of an AAF system (artificial antiferromagnetic system) consisting of at least one bias layer, at least one flux guide layer and at least one coupling layer arranged between them and coupling the two layers antiferromagnetically, the magnetization of the bias layer being adjustable in the opposite direction to the magnetization of the flux guiding layer by means of the method described above.
- AAF system artificial antiferromagnetic system
- this sensor element is characterized in that the temperature behavior of the magnetization of the bias layer and the at least one flux guiding layer in a homogeneous magnetic setting field is different due to an asymmetry between the layers.
- the magnetization (coercivity, anisotropy) can be adjusted accordingly as a result of the asymmetrical temperature behavior of the relevant layers.
- this asymmetry can be generated, for example, by differently sized magnetic moments of the bias layer and the flux guiding layer at the set temperature.
- the ratio of the magnetic moments of the two layers changes, that is to say that, for example at room temperature, the magnetic moment of the bias layer is greater than that of the flux guiding layer, while at the set temperature the magnetic moment of the bias layer is smaller than that of the flux guiding layer.
- the respective Curie temperature of the layers is different. As a result of the layer coupling, the different alignment is made possible in this case.
- Another alternative to generating the asymmetry can, according to the invention, lie in different thicknesses of the bias and the flux guide layer.
- the bias layer and the flux guiding layer for producing the asymmetry can also have different anisotropies, in which case the different anisotropy contribution at the elevated setting temperature is the cause.
- the coercivity that is to say the magnetic friction within the layers, can also be different.
- a further embodiment according to the invention can provide that the asymmetry is generated by means of a further ferri-, ferro- or antiferromagnetic layer coupled to the bias layer or the flux guiding layer.
- the bias and the flux guiding layer can be the same, because due to the coupling of the respective layer with the balance layer, the respective asymmetry contribution, for example in the form of the magnetic moments of the balance layer, or any anisotropy or different coercivity thereof, is “added” to the respective coupled layer.
- the bias and flux guidance layer can also be different in this case.
- the phase transition temperature of the further layer can be lower than the Curie temperature of the bias layer and the flux guiding layer, wherein the bias and the flux guiding layer can consist of the same material.
- the layer coupled to the further layer lacks the layer contribution at a given setting temperature above the Curie temperature of the further layer, so that the asymmetry occurs above this temperature.
- two further layers can be provided, which are coupled to the two flux guide layers located outside in the AAF system, so there are two flux guide layers here.
- a further embodiment can be such that the AAF system has two bias layers that receive the further layer between them.
- the sensor element according to the invention is not limited to structuring with only one AAF system. Rather, two AAF systems can be provided according to the invention, which accommodate a decoupled measuring layer between them. In this case, two further layers are provided, which are coupled to the outer flow guide layers of the two AAF systems.
- the temperature dependence of the magnetization and / or the anisotropy and / or the hysteresis can be so strong that at least two different bias magnetizations can be set with a fixed setting field, which can lie parallel to the setting field, but also below at an angle to this, namely when the magnetization turns back by a certain range after switching off the setting field.
- the invention relates to a sensor substrate with a plurality of sensor elements.
- the sensor elements are designed as described above, and means are also provided for locally heating one or more sensor elements.
- the means can be such that heating is made possible by means of a current flowing through the sensor element or elements. If four sensor elements are connected to each other to form a sensor bridge, the heating means can be designed and arranged in such a way that two sensor elements can be heated in each case. If a plurality of sensor bridges are arranged on the sensor substrate, the means according to the invention can be designed such that they are interrupted when the sensor bridges are separated from one another.
- the sensor elements and / or the means should expediently be arranged such that the heating current is conducted over several, but not all, sensor elements, possibly sensor bridges.
- An expedient concrete embodiment of the means provides that they are each designed as two short-circuiting conductors short-circuiting two sensor elements of a sensor bridge, the heating current being able to be conducted via the two sensor elements which are not short-circuited and are to be heated.
- the means are designed as conductors connecting the sensor elements to be heated, the sensor elements that are not to be heated being essentially at the same potential as the sensor elements to be heated.
- the heating of those which are actually not to be heated may occur
- sensor elements carrying heating current flows through them at least one voltage compensation line can be provided between two conductors serving to heat two sensor elements of a sensor bridge.
- the sensor elements connected by means of the conductors should expediently be arranged along one or more essentially straight lines.
- An expedient alternative of the invention provides that the sensor elements of a sensor bridge are formed in a meandering manner, two sensor elements being arranged so as to engage one another. This leads to better temperature behavior and mechanical stress compensation of the elements of the respective bridge halves, which results in a lower bridge offset voltage. If the sensor substrate has four sensor elements or a multiple thereof, ie if corresponding sensor bridges are present, the four or four sensor elements can form a Wheatstone bridge.
- 1 is a schematic diagram of a sensor bridge having four sensor elements, two of which are heatable and two are short-circuited,
- FIG. 2 is a schematic diagram of the arrangement of several sensor bridges on a common substrate
- FIG. 3 shows a sensor bridge from FIG. 2 after separation of the substrate
- FIG. 4 shows a sensor bridge of a second embodiment, two sensor elements here also being selectively heatable, 5 several sensor bridges according to FIG. 4 on a common substrate,
- FIG. 8 is a schematic diagram showing a sensor element of a first embodiment
- FIG. 11 shows the temperature dependence of the magnetization of the sensor element from FIG. 10,
- FIG. 17 shows the temperature dependence of the magnetization of the sensor element from FIG. 16, 18 shows a seventh embodiment of a sensor element, and
- FIG. 19 shows the temperature dependence of the magnetization of the sensor element from FIG. 18.
- FIG. 1 shows, in the form of a schematic diagram, a sensor bridge 1 consisting of two sensor elements R 1 and two sensor elements R 2 , which are interconnected in the manner of a Wheatstone bridge for temperature compensation.
- the sensor bridge is arranged on a common substrate, FIG. 2 only showing a schematic diagram of the bridge arrangement.
- sensor elements R 2 can be selectively heated.
- the sensor bridges 1 are arranged one after the other and connected to one another via the respective current pads C1 and C2.
- a current can be conducted via the sensor elements 1, which leads to the sensor elements R 2 being heated as a result of the current flow, the sensor elements Ri being short-circuited via short-circuit conductor 2 and carrying no or very little heating current, so that they are not heated.
- the formation of the short-circuit conductors is relatively simple and can be implemented by means of narrow strip paths, especially since the sensor elements usually consist of meandering conductor paths in order to achieve a comfortable impedance level.
- the short-circuit conductors are interrupted during the separation of the individual sensor bridges, cf. Fig. 3.
- the short-circuit conductors can also be subsequently etched away. 4 and 5 show a further embodiment.
- the R 2 elements are electrically connected in rows on the disc via conductor 3, each row is traversed by a current I he ⁇ z during the setting.
- the R ⁇ elements are in principle at the same potential, as can be seen in FIG. 4, according to which the Ri element on the voltage pad U 2 is at the potential V h and the R x element on the voltage pad Ui is at the potential V n . As a result, they carry hardly any electricity and are not heated.
- FIG. 6 A further advantageous embodiment of a sensor bridge is shown in FIG. 6.
- the R 1 and R 2 elements are structured in a meandering manner, within each bridge half an R 1 element and an R 2 element interlock. This "nesting" leads to a better temperature equalization as well as a better mechanical tension compensation of the elements, resulting in a lower bridge offset.
- the conductors 3 that electrically contact the R 2 elements with one another, connected by means of voltage compensation lines 4.
- Fig. 7 shows in the form of a diagram the principle of current, temperature and setting field guidance.
- the setting field which increases relatively quickly, is placed on the sensor element or elements. After reaching a Maximus, the field remains constant for a certain time.
- a current pulse is sent over the sensor element or elements, which at the same time leads to an increase in the temperature of the current-carrying R 2 elements. If the element temperature exceeds a certain temperature T s , the Sensor elements R 2 set in a different magnetic state. After the field has been switched off, the magnetization in one of these bias layers will be aligned in the opposite direction to magnetize the bias layers of the R ⁇ elements.
- the setting field is maintained until the temperature is significantly above the temperature T s .
- the current is switched off, which leads to a drop in temperature.
- the setting field is already lowered beforehand; at time t 4 there is no longer any external field. It is important that prior to the drop in temperature during the cooling process below a threshold value, namely the temperature T s the setting is completed and the setting field H is a below a certain limit. For this purpose, both a pulsed heating current and field profile are required.
- the tolerable duration of the heating strongly depends on the layer structure, the materials used, material combinations and above all on the temperature.
- the off time of the Eintechnischldes H e in must be considerably smaller than the heating-up period.
- FIG. 8 shows a schematic diagram of a sensor element.
- this consists of the substrate 5, the buffer layer 6, the measuring layer 7, the decoupling layer 8, and the AAF system 9, consisting of the bias layer I, the flux guiding layer II and the antiferomagnetic coupling layer III.
- the basic idea, as described, is to change the magnetic properties of the R 2 elements by locally increasing the temperature in such a way that the bias layer magnetizations of the R ⁇ ⁇ and R 2 elements can be oriented in opposite directions.
- the temperature dependence of the saturation magnetization and / or the coercivity and / or the anisotropy is used for this.
- the elements should be as constant as possible within the operating temperature window, ie the temperature range within which the sensor element or the bridge is operated.
- the set temperature Tx or T 2 of either the R ⁇ and / or the R 2 elements should preferably be either above or below this window.
- the temperature may also be within the operation temperature window in this case, entirely, or about that .
- the generation of the asymmetry responsible for the different temperature behavior of the layers I, II can be generated with the aid of the magnetic moments of these layers.
- layer II has a lower Curie temperature Tc 2 than layer I.
- the magnetization of layer II is parallel to the setting field H eln . That is, m 2 > m.
- a reversal of the setting via a local temperature increase can be achieved if the Curie temperature Tc 2 of layer II is sufficiently low.
- 9 illustrates the course of the magnetization as a function of the temperature.
- the low Curie temperature Tc 2 of layer II has the result that the saturation magnetization of the R 2 elements decreases significantly by the amount ⁇ M 2 when the R 2 elements are heated to the set temperature T 2 , the R ⁇ elements have that lower temperature (e.g. room temperature). A reversal occurs when m 2 ⁇ m ⁇ .
- the magnetizations or the torque distribution between layers I and II can also be interchanged.
- Ni-rich alloys are suitable as materials for the layer, the magnetization of which must be reversed.
- NiFeCo alloys with alloyed non-magnetic elements such as B. V, Cr, Pt, Pd and rare earths such as S, Tb, Nd etc. can be used.
- the set temperature of the R ⁇ sensors lies within the operating temperature window. That of the R 2 sensors is above, but still below the Curie temperature of the layer to be processed.
- the Curie temperatures of the two layers I, II are the same and are high, so that the physical layer parameters are as stable as possible.
- the layers II are coupled to two further layers IV, so-called balance layers, that is to say the two magnetizations are coupled.
- the Curie temperatures of the further layers IV are below the operating temperature window, see FIG. 11.
- the entire sensor system is now cooled to a temperature T below the operating window, this temperature still below the Curie temperature Tc 4 the other layer.
- FIG. 12 shows a further embodiment of a sensor element with a symmetrical AAF system consisting of three Magnetic layers.
- Two additional layers IV are provided on the outside of the AAF system.
- the further balance layer IV coupled there has a Curie temperature Tc 4 above the operating temperature window.
- the layer is a ferromagnetic or ferromagnetic layer that is coupled to layer II of the AAF system.
- the layers I and II can in principle consist of identical material and have a high Curie temperature.
- layer I of the R sensors at their set temperature T x the larger magnetic moment and is parallel to the setting field.
- this is exactly the opposite because of the missing moment in the balance layer ( ⁇ M 4 ).
- the moment of layer I is parallel to the setting field for these elements.
- FIG. 15 shows a further embodiment of an AAF system consisting of two bias layers and two flux guide layers arranged thereon decoupled.
- the further layer IV is included between the bias layers II, that is to say a single further layer is used here to generate the coupling-related asymmetry.
- NiFeCo alloys with additions of non-magnetic elements such as V, Cr, Pt, Pd and rare earth / transition metal alloys such as (Fe x C ⁇ _ x ) ⁇ - y X y with X e.g. can be used for the further layer Sm, Tb, Nd, Gd, Dy etc.
- non-magnetic elements such as V, Cr, Pt, Pd
- NiFeCo alloys with little alloying components or multi-layers of these elements are used.
- this can also be generated via different coercivities or corresponding anisotropies of the relevant magnetic layers of the AAF system, a combination with the moment variant also being possible. If the bias and the flux guide layer of an AAF system have the same moments, the magnetic friction (coercivity) or the anisotropy of the layers must be selected accordingly for an adjustment. It is assumed that the overall friction (or anisotropy energy) of layer II is greater than that of layer I. In this case:
- K 2 d 2 > Kxdx, with K uniaxial anisotropy constant.
- the bias layer magnetization occurs parallel to the setting field if this field is parallel to the easy direction.
- the effective rotational friction or anisotropy energy density of the balance layer-flow guide layer combination increases by the amount ⁇ 4 d 4 or K 4 d.
- the magnetization of the flux guiding layer is aligned parallel to the setting field if ⁇ 2 d 2 ⁇ xdx + ⁇ 4 d 4 or
- the R 2 elements have to be heated by means of the heating current, for example above the Neel temperature.
- a material can be selected for the balance layer with a transition temperature above the operating temperature window.
- the R ⁇ sensors are then set in the working temperature window, the R 2 sensors above the transition temperature.
- Antiferromagnetic layers such as:
- NiO 500K
- CoO 290K
- FeMn 530K
- FeO 200K
- MnO 120K
- ferrimagnetic materials can 'be used as a balance sheet layers to control the anisotropy as the coercivity.
- it is easy to generate uniaxial anisotropy via field induction or via magnetoelastic coupling.
- the 16 shows a ferrimagnetic further layer IV with a compensation temperature T comp and a Curie temperature Tc 4, preferably below the operating temperature window, cf. Fig. 17.
- the further layer IV is coupled to the layer II.
- the set temperature Tx of the R ⁇ sensors is close to the compensation temperature, so that the magnetic moment contribution of the other balance layer is almost zero, while the torque friction increases compared to a layer system without another layer. In this way, pure control over coercivity can be realized. A combination of torque and coercivity control is also another possible.
- the layers I and II consist mainly of Co, Ni and Fe as carriers of the magnetic moments.
- the ferrimagnetic balance layer medium is a rare earth / transition metal alloy
- the moment of the transition metal which in this case is magnetically coupled to layer II, predominates above the compensation temperature. Below the compensation temperature, the moment of the rare earth element predominates, which for the heavy rare earth elements opposes the magnetization of the bias layer II.
- a decrease in the total magnetization of the combination of layer II and balance layer increases the tendency of layer I to align parallel to the setting field.
- the moments of the flux guiding layers and the bias layers with coupled balance layers should preferably compensate for one another. If the setting temperature T 2 is increased above the Curie temperature (Tc 4 ) of the balance layers IV to adjust the R 2 elements, then both the friction (or the anisotropy contribution) and the magnetization contribution of the balance layer are zero. With the R ⁇ elements held at the temperature Tx, the friction contribution and / or the anisotropy contribution of the balance layer forces the magnetization of layer II parallel to the setting field. Here too, the magnetizations of the bias layers of the R x and R 2 elements are directed in the opposite direction to the setting field.
- oxidic ferrimagnets such as ferrites can be used become.
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Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2000558354A JP2002519873A (ja) | 1998-07-07 | 1999-07-01 | 磁気抵抗式センサ要素のバイアス層の磁化設定方法、それに応じて加工されたセンサ要素またはセンサ要素システムならびにこの方法を実行するのに適したセンサ要素およびセンサ基板 |
EP99945873A EP1093587A2 (de) | 1998-07-07 | 1999-07-01 | Verfahren zum einstellen der magnetisierung der biasschicht eines magneto-resistiven sensorelements, demgemäss bearbeitetes sensorelement oder sensorelementsystem sowie zur durchführung des verfahrens geeignetes sensorelement und sensorsubstrat |
US09/756,083 US20010020847A1 (en) | 1998-07-07 | 2001-01-08 | Method for setting a magnetization of a bias layer of a magnetoresistive sensor element, sensor configuration, and sensor substrate |
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DE19830344.0 | 1998-07-07 | ||
DE19830344A DE19830344C2 (de) | 1998-07-07 | 1998-07-07 | Verfahren zum Einstellen der Magnetisierung der Biasschicht eines magneto-resistiven Sensorelements, demgemäß bearbeitetes Sensorelement sowie zur Durchführung des Verfahrens geeignetes Sensorsubstrat |
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US09/756,083 Continuation US20010020847A1 (en) | 1998-07-07 | 2001-01-08 | Method for setting a magnetization of a bias layer of a magnetoresistive sensor element, sensor configuration, and sensor substrate |
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WO2000002006A2 true WO2000002006A2 (de) | 2000-01-13 |
WO2000002006A3 WO2000002006A3 (de) | 2000-08-31 |
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PCT/DE1999/002017 WO2000002006A2 (de) | 1998-07-07 | 1999-07-01 | Verfahren zum einstellen der magnetisierung der biasschicht eines magneto-resistiven sensorelements, demgemäss bearbeitetes sensorelement oder sensorelementsystem sowie zur durchführung des verfahrens geeignetes sensorelement und sensorsubstrat |
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US (1) | US20010020847A1 (de) |
EP (1) | EP1093587A2 (de) |
JP (1) | JP2002519873A (de) |
DE (1) | DE19830344C2 (de) |
WO (1) | WO2000002006A2 (de) |
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DE102007029665B3 (de) | 2007-06-27 | 2008-12-04 | Infineon Technologies Ag | Verfahren und Vorrichtung zum definierten Magnetisieren von permanent magnetisierbaren Elementen und magnetoresistiven Sensorstrukturen |
JP4780117B2 (ja) | 2008-01-30 | 2011-09-28 | 日立金属株式会社 | 角度センサ、その製造方法及びそれを用いた角度検知装置 |
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DE102009008265B4 (de) | 2009-02-10 | 2011-02-03 | Sensitec Gmbh | Anordnung zur Messung mindestens einer Komponente eines Magnetfeldes |
US8779764B2 (en) | 2009-07-13 | 2014-07-15 | Hitachi Metals, Ltd. | Method for producing magnetoresistive effect element, magnetic sensor, rotation-angle detection device |
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Also Published As
Publication number | Publication date |
---|---|
EP1093587A2 (de) | 2001-04-25 |
JP2002519873A (ja) | 2002-07-02 |
US20010020847A1 (en) | 2001-09-13 |
WO2000002006A3 (de) | 2000-08-31 |
DE19830344C2 (de) | 2003-04-10 |
DE19830344A1 (de) | 2000-01-20 |
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