WO1999029037A1 - Circuit d'amplification de puissance haute frequence, et appareil de communication mobile utilisant ledit circuit - Google Patents

Circuit d'amplification de puissance haute frequence, et appareil de communication mobile utilisant ledit circuit Download PDF

Info

Publication number
WO1999029037A1
WO1999029037A1 PCT/JP1997/004356 JP9704356W WO9929037A1 WO 1999029037 A1 WO1999029037 A1 WO 1999029037A1 JP 9704356 W JP9704356 W JP 9704356W WO 9929037 A1 WO9929037 A1 WO 9929037A1
Authority
WO
WIPO (PCT)
Prior art keywords
output
frequency power
amplifying
power
power amplifier
Prior art date
Application number
PCT/JP1997/004356
Other languages
English (en)
Japanese (ja)
Inventor
Yasuhiro Nunogawa
Tetsuaki Adachi
Original Assignee
Hitachi, Ltd.
Hitachi Toubu Semiconductor, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi, Ltd., Hitachi Toubu Semiconductor, Ltd. filed Critical Hitachi, Ltd.
Priority to PCT/JP1997/004356 priority Critical patent/WO1999029037A1/fr
Publication of WO1999029037A1 publication Critical patent/WO1999029037A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/602—Combinations of several amplifiers
    • H03F3/604—Combinations of several amplifiers using FET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H03F1/0216—Continuous control
    • H03F1/0233—Continuous control by using a signal derived from the output signal, e.g. bootstrapping the voltage supply
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers

Definitions

  • the present invention relates to a high-frequency power amplifier circuit and a mobile communication device using the same, and relates mainly to a battery-driven high-frequency power amplifier circuit and an effective technique used for controlling high-frequency power in a mobile communication device using the same. is there. Background art
  • a power coupler as high-frequency power detection for transmission power control
  • those that sense the power supply current of a high-frequency power amplifier circuit since a part of the transmission wave is extracted and detected, the insertion loss is 0.2 to 0.3 dB, and the transmission efficiency is deteriorated.
  • a resistor for sensing is inserted in series in the power supply line of the high-frequency power amplifier circuit. The usage efficiency deteriorates and the battery life is shortened.
  • the output power is small, and in that area, the sense output power is reduced, resulting in a high output, and the low power control with high accuracy cannot be performed. There is also a problem.
  • An object of the present invention is to provide a low-frequency amplifier circuit capable of detecting power with high accuracy by using the same and a mobile communication device using the same.
  • Another object of the present invention is to provide a high-frequency amplifier circuit capable of operating up to a low voltage and a mobile communication device using the same.
  • the present invention uses a first amplifying element and a second amplifying element having the same structure as the above-mentioned first amplifying element and having a small element size of 1 ZM, and from a power control circuit.
  • the same bias voltage is supplied to the first amplification element and the second amplification element, and the power output of the first amplification element is determined based on the output current output from the output terminal of the second amplification element. judge.
  • FIG. 1 is a main block diagram showing an embodiment of a mobile communication device using the high-frequency power amplifier circuit according to the present invention
  • FIG. 2 is a basic circuit diagram showing one embodiment of the high-frequency power amplifier circuit according to the present invention
  • FIG. 3 is a basic circuit diagram showing another embodiment of the high-frequency power amplifier circuit according to the present invention.
  • FIG. 4 is a characteristic diagram showing a relationship between output power and detection current for explaining an example of the operation of the high-frequency power amplifier circuit according to the present invention
  • FIG. 5 is a characteristic diagram illustrating a relationship between output power and a detection current for explaining another example of the operation of the high-frequency power amplifier circuit according to the present invention.
  • FIG. 14 shows another embodiment of the amplifier circuit.
  • FIG. 7 is a circuit diagram, FIG. 7 is a basic configuration diagram showing one embodiment of a high-frequency power amplifier circuit according to the present invention,
  • FIG. 8 is a circuit diagram showing another embodiment of the high-frequency power amplifier circuit according to the present invention.
  • FIG. 9 is a circuit diagram showing another embodiment of the high frequency power amplifier circuit according to the present invention.
  • FIG. 10 is a characteristic diagram showing a relationship between output power and detected current for explaining an example of the operation of the high-frequency power amplifier circuit according to the present invention.
  • FIG. 11 is a circuit diagram showing another embodiment of the high-frequency power amplifier circuit according to the present invention.
  • FIG. 12 is a block diagram showing another embodiment of the high-frequency power amplifier circuit according to the present invention.
  • FIG. 13 is an overall block diagram showing one embodiment of a mobile communication device using the high-frequency power amplifier circuit according to the present invention.
  • FIG. 1 is a block diagram of a main part showing an embodiment of a mobile communication device using a high-frequency power amplifier circuit according to the present invention.
  • the power source of the mobile communication device is not particularly limited, but a lithium ion battery is used.
  • a lithium ion battery is used.
  • the voltage of a lithium ion battery is a small voltage such as 3.6 V, it is necessary to obtain a required high-frequency power amplification output at such a low voltage and to minimize the power consumption thereof.
  • a sense circuit for high-frequency power output is a small voltage such as 3.6 V.
  • the input signal Pin is supplied to the input terminal of the input stage amplifier (1).
  • a power distribution circuit (2) is provided at the output of the input stage amplifier (1).
  • the power distribution circuit (2) distributes the output signal of the input stage amplifier (1) and distributes power to a plurality of output stage amplifiers (3-1) to (3-N), Perform impedance matching.
  • the output terminals of the output stage amplifiers (3-1) and (3-N) are transmitted to the output matching circuit (6).
  • the output matching circuit (6) also has a function of synthesizing the output signals of the output stage amplifiers (3-1) to (3-N).
  • the output signal of the output matching circuit (6) passes through an antenna through a duplexer (7) and is output as a radio signal.
  • the gain control circuit 4 generates a bias voltage for controlling the gain of the above-mentioned human-stage amplifier (1) and the above-mentioned output-stage amplifiers (3-1) to (3-N).
  • An input signal input from the antenna is taken into the receiving circuit (10) through the duplexer (7).
  • the received signal includes a control signal indicating the electric field strength of the radio signal from the base station, in addition to the signal from the communication partner.
  • the receiving circuit (10) decodes the control signal and forms corresponding power control signals (1) to (N) to form power control amplifiers (8-1) to (8-N). ) To tell.
  • each of the output stage amplifiers (3-1) to (3-N) has a size such as 1ZM for the amplifying element forming the output signal Pout.
  • a power sense element consisting of a small amplifying element is provided, and its input has an output gain control. The bias voltage for performing the above is transmitted.
  • the output signal from the power sense element is synthesized by the detection current synthesis circuit (5), and the synthesized signal is transmitted to the power control amplifiers (8-1) to (8-N) as a power sense output. .
  • the input-stage amplifier (1) and the output-stage amplifier (3-1) No-pass (3-N) consist of an amplifying MOSFET whose gate is input and whose source is grounded as described later, and an output signal is obtained from the drain. Things.
  • the input-stage amplifier (1) and the output-stage amplifiers (3-1) to (3-N) perform a class AB amplification operation.
  • the transconductance gm is increased. It operates as a variable gain amplifier that increases the gain.
  • the above-mentioned MOSFET is used to mean a metal-insulating film-semiconductor (MIS) FET in addition to a metal monoxide film-semiconductor field effect transistor.
  • MIS metal-insulating film-semiconductor
  • the gate electrodes of MOS FETs and MISFETs include not only metal but also conductive polycrystalline silicon, and have a structure that performs high-frequency operation.
  • This embodiment is a case of a GSM (Global System for Mobile Communication) system.
  • GSM Global System for Mobile Communication
  • this GSM system is a European common system for digital mobile phones, uses TDMA (time division multiplexing access) technology and FDD (frequency division bidirectional) technology, and has a carrier frequency of 900 MHz.
  • GMSK Gausian filtered minimum shift keying
  • the distance between base stations can be up to 10 miles (approximately 16 km), so the mobile phone must control the output to a height of 13 dBm to 43 dBm in 2 dB steps.
  • the output control method of the GSM system always controls the transmission output of the mobile phone. In other words, The mobile telephone controls output according to a control signal periodically sent from the base station.
  • one of the power control signals (1) to (N) is selected by the output control circuit included in the receiving circuit (10) as the control signal received through the antenna.
  • the power control signal has a pulse duty corresponding to the above-described time division, and is a pulse signal in which the peak value of the pulse becomes a voltage corresponding to the output power.
  • the rising and falling slopes of the pulse are controlled so as not to be steep.
  • a digital Z-to-analog conversion circuit is used to control the rising and falling slopes so that the rising and falling edges are controlled in accordance with the clock signal.
  • the power control amplifiers (8-1) to (8-N) are supplied with the power control signal as described above to one of them, and form a bias voltage so that the power control signal and the power sense output are matched. Then, the output power Pout of one output stage amplifier (3) operated as described above is controlled, and 0 0
  • the power control signal (2) rises due to the above-described slope and becomes a constant voltage corresponding to the peak power, and after the transmission time by the above-mentioned time division, falls by the same slope. Since the bias voltage changes so that the power control signal (2) and the sense output become the same, not only the peak power but also the rise and fall slopes of the transmission output can be controlled with high accuracy. .
  • the control signal from the base station specifies a small output range or a large output range
  • the power control signal (1) or (3) is formed and only the power control amplifier (8-1) or (8-3) is used. And the others are inactive. In this way, by selectively using the three output stage amplifiers, it is possible to obtain high output efficiency and high-sensitivity sense output.
  • FIG. 2 is a circuit diagram showing one embodiment of the output stage amplifier according to the present invention.
  • the output stage amplifier consists of an output MOSFET (T1) and a sense MOSFET (T2) reduced to 1 / M size.
  • the MOSFETs (T1) and (T2) are supplied with a ground potential at their sources, and supplied with a bias voltage from the gain control circuit (4) through resistors R1 and R2.
  • the signal component is supplied to the output MOSFET (T1) gate through the distribution circuit (2) and the coupling capacitor C1.
  • the gain of the MOSFET (T 1) is determined by the transconductance gm corresponding to the DC bias voltage supplied to its gate. Therefore, by providing a sensing MOSFET (T2) to which the same bias voltage is applied, the output MOSFET (T A sense output of 1 ZM can be obtained for the output power of T 1).
  • the sense output can be set corresponding to the above 1 / M, if the maximum output power of the output MOSFET (T 1) is relatively small, the above 1ZM should be increased (M should be reduced) and the output MOSF should be reduced. If the maximum output power of ET (T1) is relatively large, the above 1ZM can be reduced (increased M) to obtain a high-sensitivity sense output that is optimal for circuit control corresponding to the required output power. be able to.
  • FIG. 3 shows a circuit diagram of another embodiment of the output stage amplifier according to the present invention.
  • two output stage circuits are used to extend the output range.
  • the output power range is divided into about two, and the output MOSFET (T 1) is formed by a relatively small-sized MOSFET so as to cover a region where the output power is small.
  • the output MOSFET (T3) has a relatively large size so as to cover a region where the output power is large.
  • a sense MOSFET (T2) is provided for the output MOSFET (T 1)
  • a sense MOSFET (T4) is provided for the output MOSFET (T3). That is, the output MOSFET and the sense MOSFET are provided in one-to-one correspondence.
  • the bias voltage from the power control circuit (4) is supplied to the gates of the output MOSFET (T1) and the sense MOSFET (T2) through resistors R1 and R2. Similarly, the gates of the output MOSFET (T3) and the sense MOSFET (T4) are connected to the power control circuit ( 4) The bias voltage from is supplied through resistors R3 and R4. The input signals are supplied to the gates of the output MOSFETs (T 1) and (T3) through the coupling capacitors C 1 and C 2. The drain outputs of the output MOSFETs (T 1) and (T 3) are matched. One is selected and output through circuit (6).
  • the drains of the sense MOSFETs (T2) and (T4) are connected in common, and the drain output of the one that has been activated by the bias voltage is output from the common sense output terminal.
  • two output MOSFETs (T 1) and (T 3) are used correspondingly to the above output range. Can be used effectively.
  • FIG. 4 is a detection current-output power characteristic diagram for explaining an example of a power control method using a plurality of output MOS FETs having different output capabilities as described above.
  • the output power range is set in three stages such as small power, medium power and large power.
  • Three output stage amplifiers are provided to cover each output power range. In order to continuously change the output level from low power to high power, if the output power cannot be covered by the low power output stage amplifier, it is switched to the medium power output stage amplifier. If the medium power output stage amplifier cannot cover it, it is switched to a high power output amplifier. Conversely, in an output stage amplifier with a large output power, if the sense current is reduced and if a medium power output that cannot control a stable bias voltage with such a small sense current is instructed, Output stage amplifier.
  • the above output control is periodically performed from the base station to the mobile phone. Since the output stage amplifier is switched during the time-divisional output operation, there is no major problem in performing the power control as described above.
  • FIG. 5 shows a detection current-output power characteristic diagram for explaining another example of a power control method when a plurality of output MOSFETs having different output capabilities are used as described above. .
  • the output power range is set in three stages such as small power, medium power and large power.
  • one of the three output stage amplifiers is selected based on the output control initially specified from the base station to the mobile phone at the start of the call, and during the call, one of the selected output Output control is performed by the stage amplifier.
  • control of the output stage amplifier is simplified since there is no switching of the output stage amplifier.
  • select one of the above small power, medium power, and large power in anticipation of a range that can cover a certain width, large and small, centering on the output power specified by the base station to the mobile phone at the start of the call. You can do it.
  • FIG. 6 is a circuit diagram of another embodiment of the output stage amplifier according to the present invention.
  • this embodiment there is shown a circuit to which an automatic switching function is added when a plurality of output stages MOSFET are operated simultaneously. That is, a self-shortened down circuit is added to the output stage amplifier of this embodiment.
  • one of the plurality of output stage amplifiers is exemplarily shown as a representative, and a plurality of output MOSFETs (T 1) of a similar output stage amplifier are connected via a matching circuit (6). Connected in parallel.
  • the receiving circuit supplies the power control signal to the power control amplifiers (8-1) to (8-N) at the maximum output to control all the output stage amplifiers (3-1) to (3-N).
  • a resistor R3 is provided between the drain of the sensing MOSFET (T2) and the reference voltage Vref.
  • the drain output voltage of the MOSFET (T2) is supplied to the gate of the shut-down MOSFET T3.
  • the drain and source paths of the MOSFET (T 3) connect the gate and source (ground potential of the circuit) of the output MOSFET (T 1).
  • the drain current flowing through the sense MOSFET (T2) also decreases.
  • the voltage drop at the resistor R3 decreases and the gate voltage of the MOSFET (T3) increases.
  • the MOSFET (T 3) rises above its threshold voltage, the MOSFET (T 3) is turned on and the output MOSFET (T 1) is turned off.
  • the output MOSFET (T1) is brought into a non-operation state, and an output signal is formed by an output operation by another output MOSFET (not shown).
  • the combination of the size ratio 1 / M of the sensing MOSFETs provided in the multiple output MOSFETs as described above and the setting of the resistance value of the resistor R3 makes it possible to reference the threshold voltage of the shutdown MOSFET.
  • an output MOSFET to be operated in each of the small power region, the medium power region, and the large power region is determined in advance.
  • the self-down circuit is operated correspondingly to switch the output power. Operation is not required due to the addition of the self-shutdown circuit described above.
  • Output M ⁇ SFE T Input The signal can be cut off and the output leakage can be reduced.
  • the plurality of output MOS FETs may be composed of the same size MO SFEs, or may have a certain weight to determine the size.
  • FIG. 7 shows a basic configuration diagram of one embodiment of the high-frequency power amplifier circuit according to the present invention.
  • the figure shows a circuit of an output stage amplifier composed of an output MOSFET and a sense MOS FET, and corresponding element patterns.
  • the output stage amplifier has the same output amplification MOSFET (T1), sensing MOSFET (T2), and resistor that transmits the bias voltage for gain control to the gates of the MOSFETs (T1) and (T2). R1 and R2, and a coupling capacitor C1 for transmitting the input signal Pin to the gate of the output MOSFET (T1).
  • a load resistance is provided between the drain Drain (l) of the output amplification MOSFET (T 1) and the power supply voltage Vcc.
  • the drain Drain (2) of the sensing MOSFET (T2) is provided with a sensing resistor Rs, and the detection current detected by the sensing MOSFET (T2) can be converted into a voltage signal by the resistor Rs.
  • the sense MOSFET (T2) is formed thick in the vertical direction by hatching, and a drain is formed so as to be sandwiched between a pair of source regions.
  • a pair of gate electrodes shown in black is provided between the source region and the drain region.
  • the two gate electrodes are commonly connected to the gate wiring Gate (2) on the lower side.
  • the drain region formed so as to be sandwiched between the two gate electrodes is connected to a drain wiring Drain (2).
  • the output MOSFET (T 1) is composed of M sets of source, drain and gate using the above source, drain and gate electrode as one unit. The electrodes are arranged side by side. As a result, the drain current flowing through the MOSFET (T 1) is multiplied by M times the drain current flowing through the MOSFET (T2) when the gate-source voltage is the same. In other words, the current of 1 ZM flows through the sensing MOSFET (T2) with respect to the output DC current output from the output MOSFET (T1). Since the output DC current of the output MOSFET (T1) corresponds to the transmission output power, the drain current flowing through the sensing MOSFET (T2) corresponds to the transmission output power.
  • the source region of the MOSFET (T2) and the source region consisting of M groups arranged in the lateral direction of the MOSFET (T1) are connected in common, and the ground potential of the circuit is given.
  • FIG. 8 is a circuit diagram of another embodiment of the high-frequency power amplifier circuit according to the present invention.
  • the sense sensitivity is switched.
  • the sense resistor connected to the drain wiring Drain (2) of the sensing MOSFET (T2) is connected by two series circuits as Rs1 and Rs2.
  • a switch is provided, and the voltage generated by the series resistance of the resistors Rs1 and Rs2 or the voltage generated by the resistor Rs1 is supplied to the amplifier circuit as a sense signal to obtain the sense output. Is to do so.
  • FIG. 9 shows a circuit diagram of still another embodiment of the high-frequency power amplifier circuit according to the present invention. Also in this embodiment, the sense sensitivity is switched. That is, two sense MOSFETs (T2) and (T2 ') are provided for the output stage amplifier similar to that of FIG.
  • the drains Drain (2) and Drain (2 ') of these MOSFETs for sensing (T2) and (T2') have a sense resistor commonly connected to Rs1.
  • the gate of the added sensing MOSFET (# 2 ') is switched by a switch via the gate input resistor R3 to the gain control bias voltage or the circuit ground potential.
  • the sense current formed by the one sensing MOSFET (T 1) or the sensing current doubled by adding the sensing MOSFET ( ⁇ 2 ′) is obtained.
  • the power flowing through the drain of the sense MOSFET (T 2) increases accordingly.
  • the ground potential of the circuit is supplied to the gate of the sensing MOSFET (T 2 ′) by the switch to turn off the sensing MOSFET (T 2 ′).
  • the sense current formed only by the power MOSFET (T 2) flows through the sense resistor Rs 1.
  • FIG. 10 is a characteristic diagram of output power and detection current for explaining an example of the operation of the high-frequency power amplifier circuit according to the present invention.
  • This characteristic diagram corresponds to the description of the operation of the high-frequency power amplifier circuit shown in FIGS. 8 and 9 and includes a switch Rs in which a sense resistor Rs2 is inserted in series or a MOSFET for sensing ( ⁇ 2 ′ ), The sense sensitivity is maintained high even in a small power region, as in the case of a single region.
  • FIG. 11 is a circuit diagram of still another embodiment of the high-frequency power amplifier circuit according to the present invention.
  • the input signal Pin is also supplied to the sensing MOSFET (T2).
  • the gates of the output MOSFET (T 1) and the sensing MOSFET (T2) are connected in common, and a bias voltage for gain control is applied via the resistor R 1.
  • the input signal Pin is supplied to the output MOSFET (T1) and the gate of the sensing MOSFET (T2) via the coupling capacitor C1.
  • a signal component also flows to the drain output of the sensing MOSFET (T2), which is smoothed by the capacity provided in parallel with the sense resistor Rs1 and approximated by the drain output of the output MOSFET (T1).
  • a sense voltage can be formed.
  • FIG. 12 is a block diagram showing still another embodiment of the high-frequency power amplifier circuit according to the present invention.
  • the high frequency power amplification stage In order to obtain a high gain in the amplifier, a three-stage amplifier configuration consisting of the first-stage amplifier A1, the second-stage amplifier A2, and the output-stage amplifier A3 is adopted.
  • the first-stage amplifier A1 and the second-stage amplifier A2 are composed of simple amplification MOSFETs only, and the output MOSFET (T1) and the sensing MOSFET (T2) are provided only in the output-stage amplifier A3.
  • the bias voltage for gain control formed based on the detection signal from the sensing MOSFET (T 2) of the stage amplifier is supplied to the first stage amplifier A 1, the second stage amplifier A 2, and the output stage amplifier A 3 in common. .
  • the overall power control including the process variation of the first-stage amplifier A1 and the next-stage amplifier A2 is performed by the output sense of the output stage amplifier with the highest power and the corresponding power control. You can do it. Since the output signals of the MOSFETs constituting the first-stage amplifier A1 and the second-stage amplifier A2 are small, the size of the MOSFET is determined in accordance with each output.
  • FIG. 13 is an overall block diagram of one embodiment of the mobile communication device according to the present invention.
  • the most typical example of the mobile communication device is a mobile phone.
  • the reception signal received by the antenna is amplified in the reception front-end, converted into an intermediate frequency by the mixer, and transmitted to the audio processing circuit through the intermediate signal processing circuit IF-IC.
  • the gain control signal periodically included in the received signal is not particularly limited, but is decoded in the microprocessor CPU, and is a power control signal including a pulse duty corresponding to the time division as described above. Is formed and transmitted to the high-frequency power amplifier as described above according to the present invention, and power control of the transmission output is performed.
  • the frequency synthesizer consists of a reference oscillator circuit T CXO and a voltage-controlled oscillator circuit V An oscillation signal corresponding to the reception frequency is formed by the CO and PLL loops, while being transmitted to the reception front-end mixer.
  • the oscillating signal is, on the other hand, supplied to a modulator.
  • the received signal drives the receiver to output an audio signal.
  • the transmitted voice is converted into an electrical signal by a microphone and transmitted to the modulator through a voice processing circuit and a modem.
  • a plurality of the first amplifying elements are provided. ⁇ By increasing or decreasing the number of first amplifiers that are operated in parallel in response to the control signal of one control circuit, it is possible to widen the output with high efficiency and cover the output power range. The effect that a high frequency power amplifier circuit can be obtained is obtained.
  • the first amplifying element is composed of a plurality of pieces having different sizes, and one of the plurality is selectively operated according to an output control signal corresponding to the control signal of the power control circuit.
  • the second amplifying element has a one-to-one correspondence with the first amplifying element.
  • a plurality of the plurality of the plurality of the first amplifying elements which are brought into the above-mentioned operation state in response to the control signal from the above-mentioned power control circuit are arranged in parallel to obtain a sense output.
  • the effect is obtained that a sense output corresponding to the power switching can be obtained.
  • the second amplifying element is composed of a plurality corresponding to the first amplifying element in a one-to-one correspondence, and one of the first amplifying elements is set to the operation state by a control signal from the power control circuit.
  • the output current output from the output terminal of the second amplifier element is selectively switched to a plurality of series resistors by a switch that is switch-controlled by the output current detection sensitivity switching signal, thereby reducing The effect that the high sensitivity can be maintained in the power region as in the case of the large noise region can be obtained.
  • the second amplifier element has a plurality of common output terminals, and the control signal is selectively supplied by a switch that is switch-controlled by an output current sensitivity switching signal.
  • the effect is that the sensitivity can be maintained at a high level as in the case of a large power range.
  • An input signal supplied to the input terminal of the first amplifier element is also supplied to the input terminal of the second amplifier element, and the output current of the second amplifier element is converted to a direct current of the input signal.
  • the detection current it is possible to obtain an effect that higher-precision and more accurate power control becomes possible.
  • the first amplifying element constitutes an output stage amplifier of a multi-stage amplifying circuit in which one or a plurality of amplifying elements-are connected in cascade at the preceding stage, and the second amplifying element is
  • the control signal formed by the power control circuit is provided corresponding to the first amplification element constituting the output stage amplifier, and the control signal formed by the power control circuit is supplied to the amplification element constituting each stage of the amplification amplifier connected in the cascade configuration.
  • the battery life can be prolonged, in other words, the communication time per charge can be prolonged. Is obtained.
  • a high-frequency power amplifier circuit according to the present invention is controlled by a control signal included in a received signal from a base station, and an electronic circuit such as a transmission / reception circuit or a control circuit including the high-frequency power amplifier circuit is operated by a battery. As a result, it is possible to obtain a mobile communication device having a longer communication time per charge.
  • the digital mobile phone may be of any type as long as the output power is controlled by a control signal from a base station, such as a CDMA (Code Division Multiple Access) system. For example, even in the CDMA system, power control is performed by performing precise feedback control from a base station to a mobile phone.
  • a control signal from a base station, such as a CDMA (Code Division Multiple Access) system.
  • CDMA Code Division Multiple Access
  • the transmission operation with high efficiency can be performed by using the high-frequency power amplifier circuit according to the present invention.
  • mobile communication devices convert digital signals into signals in the voice signal frequency band and use the digital telephone switching network to communicate with personal computers and other similar mobile communication devices.
  • a digital signal may be transmitted and received between the devices.
  • the present invention can be widely used for high-frequency power amplifier circuits and mobile communication devices using the same.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

L'invention concerne un circuit d'amplification de puissance haute fréquence, dans lequel on utilise un premier élément d'amplification et un second élément d'amplification ayant la même structure que le premier élément d'amplification et dont la taille est réduite à 1/M. Le premier élément d'amplification et le second élément d'amplification sont alimentés par la même tension de polarisation à partir d'un circuit de commande de puissance et la sortie de puissance du premier élément d'amplification est évaluée sur la base du courant de sortie de la borne de sortie du second élément d'amplification.
PCT/JP1997/004356 1997-11-28 1997-11-28 Circuit d'amplification de puissance haute frequence, et appareil de communication mobile utilisant ledit circuit WO1999029037A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP1997/004356 WO1999029037A1 (fr) 1997-11-28 1997-11-28 Circuit d'amplification de puissance haute frequence, et appareil de communication mobile utilisant ledit circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1997/004356 WO1999029037A1 (fr) 1997-11-28 1997-11-28 Circuit d'amplification de puissance haute frequence, et appareil de communication mobile utilisant ledit circuit

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US09555010 A-371-Of-International 2000-09-05
US10/277,663 Continuation US20030054780A1 (en) 2000-09-05 2002-10-23 High frequency power amplifying circuit, and mobile communication apparatus using it

Publications (1)

Publication Number Publication Date
WO1999029037A1 true WO1999029037A1 (fr) 1999-06-10

Family

ID=14181551

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP1997/004356 WO1999029037A1 (fr) 1997-11-28 1997-11-28 Circuit d'amplification de puissance haute frequence, et appareil de communication mobile utilisant ledit circuit

Country Status (1)

Country Link
WO (1) WO1999029037A1 (fr)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6463267B1 (en) * 1999-04-21 2002-10-08 Hitachi, Ltd. High frequency power amplifying apparatus having amplifying stages with gain control signals of lower amplitudes applied to earlier preceding stages
JP2003531547A (ja) * 2000-04-13 2003-10-21 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 電力増幅器で使用するための正確な電力検出回路
WO2004023648A2 (fr) * 2002-09-03 2004-03-18 Triquint Semiconductor, Inc. Circuit de commande de puissance d'amplificateur
JP2005535191A (ja) * 2002-08-01 2005-11-17 テレフォンアクチーボラゲット エル エム エリクソン（パブル） 電力増幅用回路
US7064612B2 (en) 2002-10-18 2006-06-20 Hitachi, Ltd. High frequency power amplification electric part and wireless communication system
US7123095B2 (en) 2004-02-12 2006-10-17 Renesas Technology Corp. High frequency power amplifier circuit and radio communication system
JP2006527957A (ja) * 2003-06-18 2006-12-07 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 出力電力検出回路
JP2007258777A (ja) * 2006-03-20 2007-10-04 Fujitsu Ltd 増幅回路
WO2021220772A1 (fr) * 2020-04-30 2021-11-04 ヌヴォトンテクノロジージャパン株式会社 Dispositif d'amplification de puissance
US11601102B2 (en) 2020-02-05 2023-03-07 Murata Manufacturing Co., Ltd. Power amplifier circuit and semiconductor device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59207714A (ja) * 1983-05-11 1984-11-24 Toshiba Corp 電流検出回路
JPS60212013A (ja) * 1984-04-05 1985-10-24 Nec Corp 多段増幅器
JPS6152010A (ja) * 1984-08-22 1986-03-14 New Japan Radio Co Ltd 出力保護回路
JPS61136615U (fr) * 1985-02-12 1986-08-25
JPH0332122A (ja) * 1989-06-28 1991-02-12 Nec Corp 移動無線通信端末の送信出力制御方式

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59207714A (ja) * 1983-05-11 1984-11-24 Toshiba Corp 電流検出回路
JPS60212013A (ja) * 1984-04-05 1985-10-24 Nec Corp 多段増幅器
JPS6152010A (ja) * 1984-08-22 1986-03-14 New Japan Radio Co Ltd 出力保護回路
JPS61136615U (fr) * 1985-02-12 1986-08-25
JPH0332122A (ja) * 1989-06-28 1991-02-12 Nec Corp 移動無線通信端末の送信出力制御方式

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6658243B2 (en) 1999-04-21 2003-12-02 Hitachi, Ltd. High frequency power amplifying apparatus having amplifying stages with gain control signals of lower amplitudes applied to earlier preceding stages
US6463267B1 (en) * 1999-04-21 2002-10-08 Hitachi, Ltd. High frequency power amplifying apparatus having amplifying stages with gain control signals of lower amplitudes applied to earlier preceding stages
JP2003531547A (ja) * 2000-04-13 2003-10-21 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 電力増幅器で使用するための正確な電力検出回路
JP4718175B2 (ja) * 2002-08-01 2011-07-06 テレフオンアクチーボラゲット エル エム エリクソン（パブル） 電力増幅用回路
JP2005535191A (ja) * 2002-08-01 2005-11-17 テレフォンアクチーボラゲット エル エム エリクソン（パブル） 電力増幅用回路
WO2004023648A2 (fr) * 2002-09-03 2004-03-18 Triquint Semiconductor, Inc. Circuit de commande de puissance d'amplificateur
WO2004023648A3 (fr) * 2002-09-03 2004-07-22 Triquint Semiconductor Inc Circuit de commande de puissance d'amplificateur
US7064612B2 (en) 2002-10-18 2006-06-20 Hitachi, Ltd. High frequency power amplification electric part and wireless communication system
JP2006527957A (ja) * 2003-06-18 2006-12-07 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 出力電力検出回路
US7123095B2 (en) 2004-02-12 2006-10-17 Renesas Technology Corp. High frequency power amplifier circuit and radio communication system
US7193471B2 (en) 2004-02-12 2007-03-20 Renesas Technology Corp. High frequency power amplifier circuit and radio communication system
JP2007258777A (ja) * 2006-03-20 2007-10-04 Fujitsu Ltd 増幅回路
US11601102B2 (en) 2020-02-05 2023-03-07 Murata Manufacturing Co., Ltd. Power amplifier circuit and semiconductor device
WO2021220772A1 (fr) * 2020-04-30 2021-11-04 ヌヴォトンテクノロジージャパン株式会社 Dispositif d'amplification de puissance
JPWO2021220772A1 (fr) * 2020-04-30 2021-11-04
US11456712B2 (en) 2020-04-30 2022-09-27 Nuvoton Technology Corporation Japan Power amplifier device
JP7171950B2 (ja) 2020-04-30 2022-11-15 ヌヴォトンテクノロジージャパン株式会社 電力増幅装置
CN115360988A (zh) * 2020-04-30 2022-11-18 新唐科技日本株式会社 功率放大装置
US11652451B2 (en) 2020-04-30 2023-05-16 Nuvoton Technology Corporation Japan Power amplifier device
CN115360988B (zh) * 2020-04-30 2024-05-28 新唐科技日本株式会社 功率放大装置

Similar Documents

Publication Publication Date Title
US7227415B2 (en) High frequency power amplifier circuit and radio communication system
US6967535B2 (en) High frequency power amplifier circuit
JP4488309B2 (ja) 高周波電力増幅用電子部品
US6288612B1 (en) Radio communication apparatus and radio frequency power amplifier
CN1838530B (zh) 高频功率放大器电路
US6919762B2 (en) High frequency power amplifier electric parts and radio telecommunication system
WO2004013957A3 (fr) Circuit d'amplification de puissance
WO1999029037A1 (fr) Circuit d'amplification de puissance haute frequence, et appareil de communication mobile utilisant ledit circuit
US20010034217A1 (en) System and method for selectively interconnecting amplifiers in a communications device
US5373251A (en) Transmission output amplifier
US5471656A (en) Communication apparatus utilizing high power amplifier
US20030054780A1 (en) High frequency power amplifying circuit, and mobile communication apparatus using it
JP2005020383A (ja) 高周波電力増幅回路および無線通信システム
KR100734554B1 (ko) 전자 장치 및 증폭기
JP3517766B2 (ja) Ｒｆ電力増幅回路および移動体通信端末装置
JPH0946152A (ja) 無線送受信装置
ATE393980T1 (de) Schaltung für leistungsverstärker
JP2005217557A (ja) 高周波電力増幅回路
US20010013811A1 (en) Grounded emitter amplifier and a radio communication device using the same
US6906587B2 (en) Current controlled bridge amplifier
KR20010108018A (ko) 이동체 통신장치
JP2005217558A (ja) 高周波電力増幅回路
JPH07303030A (ja) 半導体集積回路
JP2006101072A (ja) 高周波電力増幅回路
JP2006270526A (ja) 半導体装置および高周波電力増幅モジュール

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): CN JP KR SG US

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AT BE CH DE DK ES FI FR GB GR IE IT LU MC NL PT SE

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
NENP Non-entry into the national phase

Ref country code: KR

WWE Wipo information: entry into national phase

Ref document number: 09555010

Country of ref document: US

122 Ep: pct application non-entry in european phase