WO1999029037A1

WO1999029037A1 - High frequency power amplifying circuit, and mobile communication apparatus using it

Info

Publication number: WO1999029037A1
Application number: PCT/JP1997/004356
Authority: WO
Inventors: Yasuhiro Nunogawa; Tetsuaki Adachi
Original assignee: Hitachi, Ltd.; Hitachi Toubu Semiconductor, Ltd.
Priority date: 1997-11-28
Filing date: 1997-11-28
Publication date: 1999-06-10

Abstract

A high frequency power amplifying circuit where a first amplifying element and a second amplifying element of the same structure as the above first amplifying element and being reduced to 1/M in element size are used, the above first amplifying element and the second amplifying element are supplied with the same bias voltage from a power control circuit, and the power output of the above first amplifying element is judged based on the output current ouputted from the output terminal of the above second amplifying element.

Description

Specification-RF power amplifier circuit and mobile communication equipment using it

The present invention relates to a high-frequency power amplifier circuit and a mobile communication device using the same, and relates mainly to a battery-driven high-frequency power amplifier circuit and an effective technique used for controlling high-frequency power in a mobile communication device using the same. is there. Background art

Regarding the high-frequency power amplifier (RF power amplifier IC) used in mobile communication equipment, see Nikkei McGraw-Hill, Nikkei Electronics, January 27, 1997, pages 115-126. is there.

In mobile communication devices, there are those that use a power coupler as high-frequency power detection for transmission power control, and those that sense the power supply current of a high-frequency power amplifier circuit. In the case of using the above-mentioned power coupler, since a part of the transmission wave is extracted and detected, the insertion loss is 0.2 to 0.3 dB, and the transmission efficiency is deteriorated. In the case of sensing the power supply current described above, a resistor for sensing is inserted in series in the power supply line of the high-frequency power amplifier circuit. The usage efficiency deteriorates and the battery life is shortened. Also, in any of the sensing methods described above, the output power is small, and in that area, the sense output power is reduced, resulting in a high output, and the low power control with high accuracy cannot be performed. There is also a problem.

Therefore, the present invention realizes a high transmission efficiency and a wide power range. An object of the present invention is to provide a low-frequency amplifier circuit capable of detecting power with high accuracy by using the same and a mobile communication device using the same. Another object of the present invention is to provide a high-frequency amplifier circuit capable of operating up to a low voltage and a mobile communication device using the same. The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings. Disclosure of the invention

The present invention uses a first amplifying element and a second amplifying element having the same structure as the above-mentioned first amplifying element and having a small element size of 1 ZM, and from a power control circuit. The same bias voltage is supplied to the first amplification element and the second amplification element, and the power output of the first amplification element is determined based on the output current output from the output terminal of the second amplification element. judge. BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a main block diagram showing an embodiment of a mobile communication device using the high-frequency power amplifier circuit according to the present invention,

FIG. 2 is a basic circuit diagram showing one embodiment of the high-frequency power amplifier circuit according to the present invention,

FIG. 3 is a basic circuit diagram showing another embodiment of the high-frequency power amplifier circuit according to the present invention,

FIG. 4 is a characteristic diagram showing a relationship between output power and detection current for explaining an example of the operation of the high-frequency power amplifier circuit according to the present invention;

FIG. 5 is a characteristic diagram illustrating a relationship between output power and a detection current for explaining another example of the operation of the high-frequency power amplifier circuit according to the present invention. FIG. 14 shows another embodiment of the amplifier circuit. FIG. 7 is a circuit diagram, FIG. 7 is a basic configuration diagram showing one embodiment of a high-frequency power amplifier circuit according to the present invention,

FIG. 8 is a circuit diagram showing another embodiment of the high-frequency power amplifier circuit according to the present invention,

FIG. 9 is a circuit diagram showing another embodiment of the high frequency power amplifier circuit according to the present invention,

FIG. 10 is a characteristic diagram showing a relationship between output power and detected current for explaining an example of the operation of the high-frequency power amplifier circuit according to the present invention;

FIG. 11 is a circuit diagram showing another embodiment of the high-frequency power amplifier circuit according to the present invention,

FIG. 12 is a block diagram showing another embodiment of the high-frequency power amplifier circuit according to the present invention,

FIG. 13 is an overall block diagram showing one embodiment of a mobile communication device using the high-frequency power amplifier circuit according to the present invention. BEST MODE FOR CARRYING OUT THE INVENTION

The present invention will be described in more detail with reference to the accompanying drawings.

FIG. 1 is a block diagram of a main part showing an embodiment of a mobile communication device using a high-frequency power amplifier circuit according to the present invention. The power source of the mobile communication device is not particularly limited, but a lithium ion battery is used. As is well known, since the voltage of a lithium ion battery is a small voltage such as 3.6 V, it is necessary to obtain a required high-frequency power amplification output at such a low voltage and to minimize the power consumption thereof. In order to make the following And a sense circuit for high-frequency power output.

The input signal Pin is supplied to the input terminal of the input stage amplifier (1). A power distribution circuit (2) is provided at the output of the input stage amplifier (1). The power distribution circuit (2) distributes the output signal of the input stage amplifier (1) and distributes power to a plurality of output stage amplifiers (3-1) to (3-N), Perform impedance matching.

The output terminals of the output stage amplifiers (3-1) and (3-N) are transmitted to the output matching circuit (6). The output matching circuit (6) also has a function of synthesizing the output signals of the output stage amplifiers (3-1) to (3-N). The output signal of the output matching circuit (6) passes through an antenna through a duplexer (7) and is output as a radio signal.

The gain control circuit 4 generates a bias voltage for controlling the gain of the above-mentioned human-stage amplifier (1) and the above-mentioned output-stage amplifiers (3-1) to (3-N).

An input signal input from the antenna is taken into the receiving circuit (10) through the duplexer (7). The received signal includes a control signal indicating the electric field strength of the radio signal from the base station, in addition to the signal from the communication partner. The receiving circuit (10) decodes the control signal and forms corresponding power control signals (1) to (N) to form power control amplifiers (8-1) to (8-N). ) To tell.

Also, although not particularly limited, each of the output stage amplifiers (3-1) to (3-N) has a size such as 1ZM for the amplifying element forming the output signal Pout. A power sense element consisting of a small amplifying element is provided, and its input has an output gain control. The bias voltage for performing the above is transmitted. -The output signal from the power sense element is synthesized by the detection current synthesis circuit (5), and the synthesized signal is transmitted to the power control amplifiers (8-1) to (8-N) as a power sense output. .

The input-stage amplifier (1) and the output-stage amplifier (3-1) No-pass (3-N) consist of an amplifying MOSFET whose gate is input and whose source is grounded as described later, and an output signal is obtained from the drain. Things.

The input-stage amplifier (1) and the output-stage amplifiers (3-1) to (3-N) perform a class AB amplification operation. By increasing the gate voltage, the transconductance gm is increased. It operates as a variable gain amplifier that increases the gain. In the present application, the above-mentioned MOSFET is used to mean a metal-insulating film-semiconductor (MIS) FET in addition to a metal monoxide film-semiconductor field effect transistor. The gate electrodes of MOS FETs and MISFETs include not only metal but also conductive polycrystalline silicon, and have a structure that performs high-frequency operation.

This embodiment is a case of a GSM (Global System for Mobile Communication) system. As is well known, this GSM system is a European common system for digital mobile phones, uses TDMA (time division multiplexing access) technology and FDD (frequency division bidirectional) technology, and has a carrier frequency of 900 MHz. GMSK (Gaussian filtered minimum shift keying) is used as the modulation method.

In the above GSM system, the distance between base stations can be up to 10 miles (approximately 16 km), so the mobile phone must control the output to a height of 13 dBm to 43 dBm in 2 dB steps. The output control method of the GSM system always controls the transmission output of the mobile phone. In other words, The mobile telephone controls output according to a control signal periodically sent from the base station.

In FIG. 1, one of the power control signals (1) to (N) is selected by the output control circuit included in the receiving circuit (10) as the control signal received through the antenna. The power control signal has a pulse duty corresponding to the above-described time division, and is a pulse signal in which the peak value of the pulse becomes a voltage corresponding to the output power. However, the rising and falling slopes of the pulse are controlled so as not to be steep. A digital Z-to-analog conversion circuit is used to control the rising and falling slopes so that the rising and falling edges are controlled in accordance with the clock signal.

The power control amplifiers (8-1) to (8-N) are supplied with the power control signal as described above to one of them, and form a bias voltage so that the power control signal and the power sense output are matched. Then, the output power Pout of one output stage amplifier (3) operated as described above is controlled, and 0 ₀

In this embodiment, in order to easily and precisely control the output power in the above-described wide and range, for example, when N is set to 3, 13 dBm to 43 dBm is used. Such setting ranges are individually assigned to small output amplifiers (1), medium output amplifiers (3-2), and large output amplifiers (3-3). In the receiving circuit (10), if the control signal from the base station specifies the medium output range, a power control signal (2) is formed to instruct only the power control amplifier (8-2) to operate. . The other power control amplifiers (8-1) and (8-3) have the power control signals (1) and (3) set to zero. The corresponding output stage amplifiers (3-1) and (3-3) are deactivated by the bias voltage '.

Then, the power control signal (2) rises due to the above-described slope and becomes a constant voltage corresponding to the peak power, and after the transmission time by the above-mentioned time division, falls by the same slope. Since the bias voltage changes so that the power control signal (2) and the sense output become the same, not only the peak power but also the rise and fall slopes of the transmission output can be controlled with high accuracy. .

If the control signal from the base station specifies a small output range or a large output range, the power control signal (1) or (3) is formed and only the power control amplifier (8-1) or (8-3) is used. And the others are inactive. In this way, by selectively using the three output stage amplifiers, it is possible to obtain high output efficiency and high-sensitivity sense output.

FIG. 2 is a circuit diagram showing one embodiment of the output stage amplifier according to the present invention. The output stage amplifier consists of an output MOSFET (T1) and a sense MOSFET (T2) reduced to 1 / M size. The MOSFETs (T1) and (T2) are supplied with a ground potential at their sources, and supplied with a bias voltage from the gain control circuit (4) through resistors R1 and R2. The signal component is supplied to the output MOSFET (T1) gate through the distribution circuit (2) and the coupling capacitor C1.

As described above, the gain of the MOSFET (T 1) is determined by the transconductance gm corresponding to the DC bias voltage supplied to its gate. Therefore, by providing a sensing MOSFET (T2) to which the same bias voltage is applied, the output MOSFET (T A sense output of 1 ZM can be obtained for the output power of T 1).

In this configuration, since all output signals formed by the output MOSFET (T 1) are output as transmission signals, a high transmission output can be obtained even at a low voltage. Since the sense output can be set corresponding to the above 1 / M, if the maximum output power of the output MOSFET (T 1) is relatively small, the above 1ZM should be increased (M should be reduced) and the output MOSF should be reduced. If the maximum output power of ET (T1) is relatively large, the above 1ZM can be reduced (increased M) to obtain a high-sensitivity sense output that is optimal for circuit control corresponding to the required output power. be able to.

FIG. 3 shows a circuit diagram of another embodiment of the output stage amplifier according to the present invention. In this embodiment, two output stage circuits are used to extend the output range.

In this embodiment, the output power range is divided into about two, and the output MOSFET (T 1) is formed by a relatively small-sized MOSFET so as to cover a region where the output power is small. On the other hand, the output MOSFET (T3) has a relatively large size so as to cover a region where the output power is large. In this embodiment, a sense MOSFET (T2) is provided for the output MOSFET (T 1), and a sense MOSFET (T4) is provided for the output MOSFET (T3). That is, the output MOSFET and the sense MOSFET are provided in one-to-one correspondence.

The bias voltage from the power control circuit (4) is supplied to the gates of the output MOSFET (T1) and the sense MOSFET (T2) through resistors R1 and R2. Similarly, the gates of the output MOSFET (T3) and the sense MOSFET (T4) are connected to the power control circuit ( 4) The bias voltage from is supplied through resistors R3 and R4. The input signals are supplied to the gates of the output MOSFETs (T 1) and (T3) through the coupling capacitors C 1 and C 2. The drain outputs of the output MOSFETs (T 1) and (T 3) are matched. One is selected and output through circuit (6). On the other hand, the drains of the sense MOSFETs (T2) and (T4) are connected in common, and the drain output of the one that has been activated by the bias voltage is output from the common sense output terminal. In this configuration, two output MOSFETs (T 1) and (T 3) are used correspondingly to the above output range. Can be used effectively.

FIG. 4 is a detection current-output power characteristic diagram for explaining an example of a power control method using a plurality of output MOS FETs having different output capabilities as described above. In the figure, as described above, the output power range is set in three stages such as small power, medium power and large power.

Three output stage amplifiers are provided to cover each output power range. In order to continuously change the output level from low power to high power, if the output power cannot be covered by the low power output stage amplifier, it is switched to the medium power output stage amplifier. If the medium power output stage amplifier cannot cover it, it is switched to a high power output amplifier. Conversely, in an output stage amplifier with a large output power, if the sense current is reduced and if a medium power output that cannot control a stable bias voltage with such a small sense current is instructed, Output stage amplifier.

In the above GSM system, the above output control is periodically performed from the base station to the mobile phone. Since the output stage amplifier is switched during the time-divisional output operation, there is no major problem in performing the power control as described above.

FIG. 5 shows a detection current-output power characteristic diagram for explaining another example of a power control method when a plurality of output MOSFETs having different output capabilities are used as described above. . In the figure, as described above, the output power range is set in three stages such as small power, medium power and large power.

In this embodiment, one of the three output stage amplifiers is selected based on the output control initially specified from the base station to the mobile phone at the start of the call, and during the call, one of the selected output Output control is performed by the stage amplifier. In this configuration, control of the output stage amplifier is simplified since there is no switching of the output stage amplifier. In general, it is considered that there is no need to extremely change the output power during a call in a mobile phone, so there is no practical problem with the above control method. In other words, select one of the above small power, medium power, and large power in anticipation of a range that can cover a certain width, large and small, centering on the output power specified by the base station to the mobile phone at the start of the call. You can do it.

FIG. 6 is a circuit diagram of another embodiment of the output stage amplifier according to the present invention. In this embodiment, there is shown a circuit to which an automatic switching function is added when a plurality of output stages MOSFET are operated simultaneously. That is, a self-shortened down circuit is added to the output stage amplifier of this embodiment.

In the figure, one of the plurality of output stage amplifiers is exemplarily shown as a representative, and a plurality of output MOSFETs (T 1) of a similar output stage amplifier are connected via a matching circuit (6). Connected in parallel. For example, Figure 1 In the circuit of (1), the receiving circuit supplies the power control signal to the power control amplifiers (8-1) to (8-N) at the maximum output to control all the output stage amplifiers (3-1) to (3-N). Move to working state. A resistor R3 is provided between the drain of the sensing MOSFET (T2) and the reference voltage Vref. The drain output voltage of the MOSFET (T2) is supplied to the gate of the shut-down MOSFET T3. The drain and source paths of the MOSFET (T 3) connect the gate and source (ground potential of the circuit) of the output MOSFET (T 1).

When the specified output control signal lowers the bias voltage, the drain current flowing through the sense MOSFET (T2) also decreases. When this drain current decreases, the voltage drop at the resistor R3 decreases and the gate voltage of the MOSFET (T3) increases. When the gate voltage of the MOSFET (T 3) rises above its threshold voltage, the MOSFET (T 3) is turned on and the output MOSFET (T 1) is turned off. As a result, the output MOSFET (T1) is brought into a non-operation state, and an output signal is formed by an output operation by another output MOSFET (not shown).

The combination of the size ratio 1 / M of the sensing MOSFETs provided in the multiple output MOSFETs as described above and the setting of the resistance value of the resistor R3 makes it possible to reference the threshold voltage of the shutdown MOSFET. In addition to combining the output signals of the plurality of output MOSFETs to perform transmission output, for example, an output MOSFET to be operated in each of the small power region, the medium power region, and the large power region is determined in advance. The self-down circuit is operated correspondingly to switch the output power. Operation is not required due to the addition of the self-shutdown circuit described above. Output M 出力 SFE T Input The signal can be cut off and the output leakage can be reduced. -In the above case, the plurality of output MOS FETs may be composed of the same size MO SFEs, or may have a certain weight to determine the size.

FIG. 7 shows a basic configuration diagram of one embodiment of the high-frequency power amplifier circuit according to the present invention. The figure shows a circuit of an output stage amplifier composed of an output MOSFET and a sense MOS FET, and corresponding element patterns.

The output stage amplifier has the same output amplification MOSFET (T1), sensing MOSFET (T2), and resistor that transmits the bias voltage for gain control to the gates of the MOSFETs (T1) and (T2). R1 and R2, and a coupling capacitor C1 for transmitting the input signal Pin to the gate of the output MOSFET (T1). A load resistance is provided between the drain Drain (l) of the output amplification MOSFET (T 1) and the power supply voltage Vcc. The drain Drain (2) of the sensing MOSFET (T2) is provided with a sensing resistor Rs, and the detection current detected by the sensing MOSFET (T2) can be converted into a voltage signal by the resistor Rs.

As shown in the pattern diagram, the sense MOSFET (T2) is formed thick in the vertical direction by hatching, and a drain is formed so as to be sandwiched between a pair of source regions. A pair of gate electrodes shown in black is provided between the source region and the drain region. The two gate electrodes are commonly connected to the gate wiring Gate (2) on the lower side. The drain region formed so as to be sandwiched between the two gate electrodes is connected to a drain wiring Drain (2).

On the other hand, the output MOSFET (T 1) is composed of M sets of source, drain and gate using the above source, drain and gate electrode as one unit. The electrodes are arranged side by side. As a result, the drain current flowing through the MOSFET (T 1) is multiplied by M times the drain current flowing through the MOSFET (T2) when the gate-source voltage is the same. In other words, the current of 1 ZM flows through the sensing MOSFET (T2) with respect to the output DC current output from the output MOSFET (T1). Since the output DC current of the output MOSFET (T1) corresponds to the transmission output power, the drain current flowing through the sensing MOSFET (T2) corresponds to the transmission output power. The source region of the MOSFET (T2) and the source region consisting of M groups arranged in the lateral direction of the MOSFET (T1) are connected in common, and the ground potential of the circuit is given.

FIG. 8 is a circuit diagram of another embodiment of the high-frequency power amplifier circuit according to the present invention. In this embodiment, the sense sensitivity is switched. In other words, for the output stage amplifier similar to that of Fig. 7, the sense resistor connected to the drain wiring Drain (2) of the sensing MOSFET (T2) is connected by two series circuits as Rs1 and Rs2. A switch is provided, and the voltage generated by the series resistance of the resistors Rs1 and Rs2 or the voltage generated by the resistor Rs1 is supplied to the amplifier circuit as a sense signal to obtain the sense output. Is to do so.

In a region where the output power of the output MOSFET (T 1) is small, the current flowing to the drain of the sensing MOSFET (T 2) also decreases accordingly. In this case, a large voltage generated in the series circuit of the resistors Rs1 and Rs2 by the switch is taken in as a sense voltage. In the region where the output power of the output MOSFET (T1) is large, the current flowing to the drain of the sensing MOSFET (T2) also increases accordingly. In this case, the above switch caused only the resistance R s 1 The voltage is taken in as a sense voltage. In this way, by switching the sense voltage according to the magnitude of the output power, a sense output with high sensitivity can be formed. However, it goes without saying that the level switching corresponding to the power control signal side is performed by the resistance switching as described above.

FIG. 9 shows a circuit diagram of still another embodiment of the high-frequency power amplifier circuit according to the present invention. Also in this embodiment, the sense sensitivity is switched. That is, two sense MOSFETs (T2) and (T2 ') are provided for the output stage amplifier similar to that of FIG.

The drains Drain (2) and Drain (2 ') of these MOSFETs for sensing (T2) and (T2') have a sense resistor commonly connected to Rs1. The gate of the added sensing MOSFET (# 2 ') is switched by a switch via the gate input resistor R3 to the gain control bias voltage or the circuit ground potential. As a result, the sense current formed by the one sensing MOSFET (T 1) or the sensing current doubled by adding the sensing MOSFET (Τ2 ′) is obtained.

In the region where the output power of the output MOSFET (T1) is small, the current flowing to the drain of the sensing MOSFET (T2) also decreases accordingly. In this case, a bias voltage is also supplied to the sensing MOSFET (T2 ') by the switch so as to generate a doubled sense current as described above.

In the region where the output power of the output MOSFET (T 1) is large, the power flowing through the drain of the sense MOSFET (T 2) increases accordingly. In this case, the ground potential of the circuit is supplied to the gate of the sensing MOSFET (T 2 ′) by the switch to turn off the sensing MOSFET (T 2 ′). The sense current formed only by the power MOSFET (T 2) flows through the sense resistor Rs 1. By switching the sense current in accordance with the magnitude of the output power in this way, a highly sensitive sense output can be formed. However, it is needless to say that the switching of the sensing MOS FET (T 2) as described above also causes the power control signal side to perform level switching corresponding thereto.

FIG. 10 is a characteristic diagram of output power and detection current for explaining an example of the operation of the high-frequency power amplifier circuit according to the present invention. This characteristic diagram corresponds to the description of the operation of the high-frequency power amplifier circuit shown in FIGS. 8 and 9 and includes a switch Rs in which a sense resistor Rs2 is inserted in series or a MOSFET for sensing (Τ2 ′ ), The sense sensitivity is maintained high even in a small power region, as in the case of a single region.

FIG. 11 is a circuit diagram of still another embodiment of the high-frequency power amplifier circuit according to the present invention. In this embodiment, the input signal Pin is also supplied to the sensing MOSFET (T2). In other words, the gates of the output MOSFET (T 1) and the sensing MOSFET (T2) are connected in common, and a bias voltage for gain control is applied via the resistor R 1. Then, the input signal Pin is supplied to the output MOSFET (T1) and the gate of the sensing MOSFET (T2) via the coupling capacitor C1. For this reason, a signal component also flows to the drain output of the sensing MOSFET (T2), which is smoothed by the capacity provided in parallel with the sense resistor Rs1 and approximated by the drain output of the output MOSFET (T1). Thus, a sense voltage can be formed.

FIG. 12 is a block diagram showing still another embodiment of the high-frequency power amplifier circuit according to the present invention. In this embodiment, the high frequency power amplification stage In order to obtain a high gain in the amplifier, a three-stage amplifier configuration consisting of the first-stage amplifier A1, the second-stage amplifier A2, and the output-stage amplifier A3 is adopted. In this case, the first-stage amplifier A1 and the second-stage amplifier A2 are composed of simple amplification MOSFETs only, and the output MOSFET (T1) and the sensing MOSFET (T2) are provided only in the output-stage amplifier A3. The bias voltage for gain control formed based on the detection signal from the sensing MOSFET (T 2) of the stage amplifier is supplied to the first stage amplifier A 1, the second stage amplifier A 2, and the output stage amplifier A 3 in common. .

In this configuration, the overall power control including the process variation of the first-stage amplifier A1 and the next-stage amplifier A2 is performed by the output sense of the output stage amplifier with the highest power and the corresponding power control. You can do it. Since the output signals of the MOSFETs constituting the first-stage amplifier A1 and the second-stage amplifier A2 are small, the size of the MOSFET is determined in accordance with each output.

FIG. 13 is an overall block diagram of one embodiment of the mobile communication device according to the present invention. The most typical example of the mobile communication device is a mobile phone.

The reception signal received by the antenna is amplified in the reception front-end, converted into an intermediate frequency by the mixer, and transmitted to the audio processing circuit through the intermediate signal processing circuit IF-IC. The gain control signal periodically included in the received signal is not particularly limited, but is decoded in the microprocessor CPU, and is a power control signal including a pulse duty corresponding to the time division as described above. Is formed and transmitted to the high-frequency power amplifier as described above according to the present invention, and power control of the transmission output is performed.

The frequency synthesizer consists of a reference oscillator circuit T CXO and a voltage-controlled oscillator circuit V An oscillation signal corresponding to the reception frequency is formed by the CO and PLL loops, while being transmitted to the reception front-end mixer. The oscillating signal is, on the other hand, supplied to a modulator.

In the above audio processing circuit, the received signal drives the receiver to output an audio signal. The transmitted voice is converted into an electrical signal by a microphone and transmitted to the modulator through a voice processing circuit and a modem.

The operational effects obtained from the above embodiment are as follows.

(1) Using a first amplifying element and a second amplifying element having the same structure as the above-mentioned first amplifying element and having a smaller element size of 1 / M, The same bias voltage is supplied to the amplification element and the second amplification element, and the power output of the first amplification element is determined based on the output current output from the output terminal of the second amplification element. As a result, it is possible to obtain a high-frequency amplifier circuit that enables high-precision power detection over a wide power range while realizing high transmission efficiency.

(2) A plurality of the first amplifying elements are provided.数 By increasing or decreasing the number of first amplifiers that are operated in parallel in response to the control signal of one control circuit, it is possible to widen the output with high efficiency and cover the output power range. The effect that a high frequency power amplifier circuit can be obtained is obtained.

(3) The first amplifying element is composed of a plurality of pieces having different sizes, and one of the plurality is selectively operated according to an output control signal corresponding to the control signal of the power control circuit. By doing so, it is possible to obtain an effect that a high-frequency power amplifier circuit that can cover a wide output power range with high efficiency can be obtained.

() The second amplifying element has a one-to-one correspondence with the first amplifying element. A plurality of the plurality of the plurality of the first amplifying elements which are brought into the above-mentioned operation state in response to the control signal from the above-mentioned power control circuit are arranged in parallel to obtain a sense output. The effect is obtained that a sense output corresponding to the power switching can be obtained. (5) The second amplifying element is composed of a plurality corresponding to the first amplifying element in a one-to-one correspondence, and one of the first amplifying elements is set to the operation state by a control signal from the power control circuit. By bringing the element corresponding to the amplifying element into the operating state, it is possible to obtain the effect that a sense output corresponding to the switching of the output power can be obtained.

(6) By forming the first and second amplifying elements on the same semiconductor substrate, it is possible to obtain an effect that a highly accurate sense output can be obtained without being affected by process variations. .

(7) The output current output from the output terminal of the second amplifier element is selectively switched to a plurality of series resistors by a switch that is switch-controlled by the output current detection sensitivity switching signal, thereby reducing The effect that the high sensitivity can be maintained in the power region as in the case of the large noise region can be obtained.

(8) The second amplifier element has a plurality of common output terminals, and the control signal is selectively supplied by a switch that is switch-controlled by an output current sensitivity switching signal. The effect is that the sensitivity can be maintained at a high level as in the case of a large power range.

(9) An input signal supplied to the input terminal of the first amplifier element is also supplied to the input terminal of the second amplifier element, and the output current of the second amplifier element is converted to a direct current of the input signal. In addition, by using the detection current, it is possible to obtain an effect that higher-precision and more accurate power control becomes possible. (10) The first amplifying element constitutes an output stage amplifier of a multi-stage amplifying circuit in which one or a plurality of amplifying elements-are connected in cascade at the preceding stage, and the second amplifying element is The control signal formed by the power control circuit is provided corresponding to the first amplification element constituting the output stage amplifier, and the control signal formed by the power control circuit is supplied to the amplification element constituting each stage of the amplification amplifier connected in the cascade configuration. By providing a common supply, the output power can be controlled with a simple configuration including the process variation of the preceding circuit.

(11) By using high-frequency MOS FETs as the first and second amplifying elements, it is not necessary to use a negative voltage as in the case of using GaAs ME SFETs, handling is simple, and lithium ion is used. The effect that operation at a low voltage like a battery becomes possible is obtained.

(12) By applying the present invention to a high-frequency power amplifier circuit that operates on battery voltage, the battery life can be prolonged, in other words, the communication time per charge can be prolonged. Is obtained.

(13) A high-frequency power amplifier circuit according to the present invention is controlled by a control signal included in a received signal from a base station, and an electronic circuit such as a transmission / reception circuit or a control circuit including the high-frequency power amplifier circuit is operated by a battery. As a result, it is possible to obtain a mobile communication device having a longer communication time per charge.

(14) By using a lithium-ion battery as the above-mentioned battery, it is possible to obtain a mobile communication device that is small and lightweight and has a long communication time per charge. Although the invention made by the inventor has been specifically described based on the embodiment, the invention of the present application is not limited to the embodiment, and may deviate from the gist of the invention. Needless to say, various changes can be made within the range that does not exist. The digital mobile phone may be of any type as long as the output power is controlled by a control signal from a base station, such as a CDMA (Code Division Multiple Access) system. For example, even in the CDMA system, power control is performed by performing precise feedback control from a base station to a mobile phone. In addition, even when the control of the output power is not so important, for example, in the IS-136 system, the AMPS system, etc., the transmission operation with high efficiency can be performed by using the high-frequency power amplifier circuit according to the present invention. Can be. In addition to transmitting and receiving voice signals like telephones, mobile communication devices convert digital signals into signals in the voice signal frequency band and use the digital telephone switching network to communicate with personal computers and other similar mobile communication devices. A digital signal may be transmitted and received between the devices. Industrial applicability

INDUSTRIAL APPLICABILITY As described above, the present invention can be widely used for high-frequency power amplifier circuits and mobile communication devices using the same.

Claims

The scope of the claims -

1. a first amplifying element;

A second amplifying element having the same structure as that of the first amplifying element and having an element size as small as 1 ZM;

A power control circuit for supplying the same bias voltage to the first amplification element and the second amplification element,

A high-frequency power amplifier circuit comprising: determining a power output of the first amplifier element based on an output current output from an output terminal of the second amplifier element.

2. The first amplifying element is composed of a plurality of elements, and the number of the first amplifying elements to be operated in a parallel mode corresponding to the control signal of the power control circuit is increased or decreased. Claims characterized by

The high-frequency power amplifier circuit according to claim 1.

3. The first amplifying element has a plurality of different sizes, and one of the plurality is selected and activated in response to an output control signal corresponding to the control signal of the power control circuit. 2. The high-frequency power amplifier circuit according to claim 1, wherein:

4. The second amplifying element comprises a plurality of one-to-one correspondences with the first amplifying element, and the first amplifying element is brought into the operating state in response to a control signal from the power control circuit. 3. The high-frequency power amplifier circuit according to claim 2, wherein a plurality of the elements according to the elements are operated in a parallel state.

5. The second amplifying element includes a plurality of ones corresponding to the first amplifying element in a one-to-one correspondence, and one first amplifying element that is brought into the above-described operation state by a control signal from the power control circuit. The one corresponding to the element operates 4. The high-frequency power amplifier circuit according to claim 3, wherein the high-frequency power amplifier circuit is placed in a state.

6. The high-frequency power amplifier circuit according to claim 4, wherein the first amplifier element and the second amplifier element are formed on the same semiconductor substrate.

7. The high-frequency power amplifier circuit according to claim 5, wherein the first amplifier element and the second amplifier element are formed on the same semiconductor substrate.

8. The output current output from the output terminal of the second amplifying element is to be selectively passed through a plurality of series resistors by a switch that is switch-controlled by an output current detection sensitivity switching signal. The high-frequency power amplifier circuit according to claim 1, wherein:

9. The second amplifying element comprises a plurality of common output terminals, and the control signal is selectively supplied by a switch which is switch-controlled by an output current sensitivity switching signal. 2. The high frequency power amplifier circuit according to claim 1, wherein:

10. The input signal supplied to the input of the first amplifier is also supplied to the input terminal of the second amplifier, and the output current of the second amplifier is detected by converting the input signal to DC. The high-frequency power amplifier circuit according to claim 1, wherein the high-frequency power amplifier circuit is a current.

1 1. The first amplifying element is configured such that one or more amplifying elements are connected in a cascade form at the preceding stage to form an output stage amplifier of a multi-stage amplifying circuit. Provided corresponding to the first amplification element constituting the step-

The control signal formed by the power control circuit is applied to the amplification elements constituting the amplification amplifiers of each stage connected in the cascade form. 2. The high-frequency power amplifier circuit according to claim 1, wherein the high-frequency power amplifier circuit is supplied in common.

12. The high-frequency power amplifier circuit according to claim 1, wherein the first and second amplifying elements are MOS FETs.

13. The high-frequency power amplifier circuit according to claim 1, wherein the first amplifier element is operated by a battery voltage.

14. A first amplifying element, a second amplifying element having the same structure as the above-mentioned first amplifying element, and having a smaller element size of 1 ZM, and a first amplifying element and a second amplifying element. A power control circuit for supplying the same bias voltage to the element, and a power output of the first amplifier element is determined based on an output current output from an output terminal of the second amplifier element. A high frequency power amplifier circuit,

A control circuit that instructs the control circuit to control output power by a control signal included in a received signal from the base station;

A mobile communication device comprising: the high-frequency power amplifier circuit; and a chargeable battery that supplies an operation voltage to an electronic circuit including the control circuit.

15. The mobile communication device according to claim 14, wherein the battery is a lithium ion battery.