WO1998006126A1 - Procede et dispositif d'attaque chimique a sec - Google Patents

Procede et dispositif d'attaque chimique a sec Download PDF

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Publication number
WO1998006126A1
WO1998006126A1 PCT/JP1996/002227 JP9602227W WO9806126A1 WO 1998006126 A1 WO1998006126 A1 WO 1998006126A1 JP 9602227 W JP9602227 W JP 9602227W WO 9806126 A1 WO9806126 A1 WO 9806126A1
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WO
WIPO (PCT)
Prior art keywords
gas
etching
processing chamber
carbon
oxygen
Prior art date
Application number
PCT/JP1996/002227
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English (en)
Japanese (ja)
Inventor
Masaru Izawa
Shinichi Tachi
Kazunori Tsujimoto
Tokuo Kure
Hironobu Kawahara
Ryouji Hamasaki
Yoshinao Kawasaki
Original Assignee
Hitachi, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi, Ltd. filed Critical Hitachi, Ltd.
Priority to PCT/JP1996/002227 priority Critical patent/WO1998006126A1/fr
Priority to PCT/JP1996/003612 priority patent/WO1998006128A1/fr
Publication of WO1998006126A1 publication Critical patent/WO1998006126A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Definitions

  • the present invention relates to a fine processing method and apparatus for a semiconductor device, and particularly to a dry etching method and apparatus for realizing high-precision processing.
  • dry etching technology One of the technologies for fine processing of semiconductor devices is dry etching technology.
  • dry etching an etching gas is introduced into a vacuum vessel, a high-frequency bias or a wave is applied to the gas, plasma is generated, and a pattern on the wafer is processed by active species and ions generated in the plasma.
  • the active species generated in the plasma are adsorbed on the surface of the active species, and the etching proceeds by introducing ions accelerated by a high-frequency bias to the active species adsorption surface. Since ions are accelerated only in the depth direction of the pattern, only the bottom surface of the pattern on the wafer is scraped, and the side surface of the pattern is not etched because there is no incidence of ions.
  • dry etching achieves anisotropic processing.
  • A1 is generated by chlorine gas regardless of the plasma dissociation of the introduced gas, chlorine gas. Since it is etched, it is necessary to form a protective film so that the pattern side is not etched.
  • the formation of this protective film is performed using a resist material. This has been done by organic products evolving from it. Specifically, the etching of the Cu-Si alloy film is performed by using an etching gas mainly composed of chlorine gas and ions generated in the plasma within a pressure range of 1 Pa to 5 Pa. At this time, the ions are also incident on the resist, so that the resist is also etched.
  • a resist product is generated by the etching of the resist, which re-enters the wafer and adheres to the side surface of the Al-Cu-Si alloy pattern to form a protective film.
  • the processing accuracy must be within 10%, preferably ⁇ 5% or less, of the mask width.
  • the side surface of the wiring material is shaved (side etching) of about 50 nm
  • the processing accuracy is within the allowable range, but if the miniaturization advances and the wiring width of 300 nm is processed.
  • the allowable amount of side etching (side etching) on the wiring material must be at least 30 nm or less.
  • the resist selectivity to resist should be reduced in order to increase the amount of resist products that serve as protective films.
  • the registry area has been increased.
  • Japanese Patent Publication No. 03-36300 as a method of etching by controlling the mixture ratio of gas containing carbon and oxygen.
  • the purpose of introducing oxygen is to efficiently generate chlorine from carbon tetrachloride in plasma.
  • the introduced gas has an oxygen atom Z carbon atom ratio between 16 and 80%.
  • the amount of oxygen (oxygen radical equivalent) generated from the inner wall of the etching apparatus is about 2 sccm, and even if carbon generated from the resist material is added, the oxygen-Z carbon ratio incident on the wafer is 10%. Beyond.
  • this protective film enables anisotropic processing of wiring material, but does not control the amount of generated resist products.
  • the mechanism of protective film formation and the factors that inhibit it were unknown. Furthermore, it was unknown how much of the product of the registry would re-enter the wafer. In such a situation, it is difficult to control the protective film on the side surface, and it has become difficult to obtain sufficient processing dimensional accuracy as the wiring pattern becomes finer.
  • An object of the present invention is to obtain a side surface protective film that does not depend on the amount of generated resist products, improve the dimensional accuracy of wiring processing, and solve the above trade-off. To erase. Disclosure of the invention
  • the above object is to supply oxygen and carbon to the object to be etched so that the ratio of the number of oxygen atoms to the number of carbon atoms becomes 10% or less, and control the deposition and etching of the protective film to process the object.
  • This is achieved by etching the object.
  • etching can be achieved by adding a hydrocarbon halide of 7% or more to less than 35% of the mixed gas to a mixed gas of chlorine gas and boron trichloride gas and performing etching.
  • a halide black form is mentioned.
  • the amount of generated resist products is at most about 5 sccm, which is 5 times smaller than the amount of chlorine gas supplied, lOOsccm.
  • this 5% of the resist product is effectively used for forming a protective film.
  • the resist product generated on the wafer has a short mean free path of 3 mm or less in the pressure range of several Pa, so it is not exhausted without colliding with other molecules and leaves the wafer by collision. The direction of movement is lost. For this reason, the light re-enters the wafer again.
  • the product concentration near the wafer becomes high.
  • the area where the product concentration is high is obtained from the diffusion equation, the distance from the wafer in the vertical direction reaches the radius of the wafer.
  • Such a region where the product concentration is high is called a near surface region, and is defined as a region where the distance from the wafer is equal to the wafer radius.
  • the amount of generated resist product is about 5 sccm, but the pressure of the resist product on the wafer is estimated to be about 0.13 Pa due to the stay effect.
  • This amount corresponds to an amount of about 13 sccm of a resist product added from the outside to the etching apparatus.
  • the effect of the resist product on the formation of the protective film is about 2.5 times that of the gas introduced from the outside.
  • the partial pressure of chlorine is reduced on the wafer by being consumed on the wafer. Therefore, the amount of chlorine incident on the wafer is smaller than the supply.
  • the total pressure is lPa
  • the total flow rate is 100sccm, of which the chlorine supply rate is 80sccm and 6 inches
  • This section describes the case where Al-Cu-Si alloy film etching is performed at an etching rate of 800 nm / min. If the etching reaction does not occur, the chlorine gas pressure is 0.8 Pa, but if the etching reaction occurs, the chlorine partial pressure on the wafer is reduced to about 0.3 Pa.
  • the ratio of the resist product incident on the wafer to chlorine becomes about 50%.
  • the resist product effectively acts on the formation of the protective film.
  • the carbon-based protective film is easily removed by the incorporation of oxygen. That is, the incidence of oxygen impedes the formation of the deposited protective film.
  • Oxygen is mainly generated by etching the material of the inner wall of the etching apparatus, for example, quartz. Thus, since oxygen has the effect of suppressing the formation of the protective film, it is necessary to reduce the amount of incident oxygen. However, in anoxic conditions, a certain amount is required because the deposits of the resist products form foreign matter and dust bases.
  • the resist product is mainly a carbon chloride-based compound and contains carbon, which is sedimentary.
  • a method of increasing the carbon content a method of directly introducing gas into the two-face area, a method of installing a carbon ring around the wafer, and introducing a carbon ring product generated by etching the carbon ring to the wafer. And a method of adding a gas so that the amount of gas containing carbon incident on the wafer becomes an appropriate amount.
  • a method of controlling the amount of oxygen a method of covering the inner wall surface of the etching apparatus with a film that does not generate oxygen can be considered.
  • Figure 1 shows the relationship between the side etching amount and the oxygen / Z carbon incident amount ratio.
  • the side etching amount 103 increases with an increase in the oxygen-Z carbon ratio. Therefore, in order to obtain sufficient processing accuracy, the oxygen-carbon ratio needs to be smaller than a certain value, depending on the pattern size. For example, if the amount of side etching is kept below 15 nm at 300 nm, the oxygen-carbon ratio will be about 10% or less. If the oxygen-Z carbon ratio is reduced, the amount of side etching is reduced.However, if the oxygen-free state is approached, the accumulation of resist products and the like is not suppressed. Etc. cause problems. Since this problem depends on the device structure, the lower limit of the oxygen-carbon ratio varies from device to device.
  • the reduction of the side etching can be realized by reducing the oxygen-Z carbon ratio within a range in which foreign particles and the like are not generated.
  • the ratio of the number of oxygen atoms to the number of carbon atoms incident on a wafer to be processed is 10% or less, side etching in wiring can be reduced. As a result, finer wiring processing can be performed with high dimensional accuracy even if the resist selection ratio is increased.
  • FIG. 1 is a conceptual diagram showing the dependence of the amount of side etching on carbon-oxygen ratio.
  • Fig. 2 is a cross-sectional view of a dry etching apparatus used in the present invention.
  • Fig. 3 is a cross-sectional view of a substrate before etching used in the embodiment.
  • FIG. 4 is a cross-sectional view of the substrate after etching under conventional conditions
  • FIG. 5 is a cross-sectional view of the substrate after etching showing that side etching is reduced by the effect of the present invention
  • FIG. 6 is a cross-sectional view of the present invention. Sectional view of the substrate after etching showing that side etching is reduced by the effect, FIG.
  • FIG. 7 is a cross-sectional view of an embodiment of the dry etching apparatus according to the present invention
  • FIG. 8 is a cross-sectional view of an embodiment of the dry etching apparatus according to the present invention.
  • FIG. 9, FIG. 9 is a cross-sectional view of the semiconductor device structure before etching used in the embodiment
  • FIG. 10 is a cross-sectional view of the semiconductor device structure showing the effects of the present invention
  • FIG. It is a cross-sectional view of an embodiment of the apparatus.
  • FIG. 2 An embodiment according to the present invention will be described with reference to wiring processing using a microwave dry etching apparatus (FIG. 2) for generating high-density plasma using electron cyclotron resonance.
  • Figure 3 shows the structure on a 6-inch silicon substrate that is the object to be etched.
  • a silicon dioxide film (SiO 2 ) 25 On a silicon substrate 26, a silicon dioxide film (SiO 2 ) 25, a lower titanium nitride (TiN) film 24, an Al-Cu-Si alloy film 23, an upper TiN film 22 and a mask pattern are formed.
  • the transferred resist mask 21 is formed.
  • the pattern width of the resist mask is 300 nm, and the area of the resist is 50% of the silicon substrate.
  • the substrate is conveyed to a processing table 5 of an etching apparatus, and as etching gas, 80 sccm of chlorine gas and 20 sccm of boron trichloride gas controlled by a flow controller 10 are vacuum-processed through a gas inlet 11.
  • FIG. 4 shows a schematic diagram of the shape after etching.
  • the Al-Cu-Si alloy film 2 just below the upper TiN 22
  • the side of No. 3 is cut off by about 60 nm, and it is not possible to obtain sufficient processing accuracy. Further, the side surface of the Al—Cu—Si alloy film 23 is entirely cut off by about 40 nm. The side has been scraped like this It is considered that this is due to excessive chlorine in the processing chamber and insufficient formation of the protective film on the side. Insufficient formation of the protective film may be due to the low amount of the resist product or the presence of oxygen that inhibits the formation of the protective film. As the ratio of oxygen concentration to resist product increases, oxygen will remove the side-wall protective film.
  • the protective film is formed from the resist product, it is important to estimate how much the resist product re-enters the Si substrate in controlling the protective film formation.
  • the amount of resist product generated is estimated by the product of the density of the resist, the etching rate of the resist, and the area of the resist.
  • the etching rate of the resist is 400 nm / min, and the area is 88 square centimeters (6 In the case of 50% of the inch silicon substrate), it becomes about 5 seem.
  • the resist product generated on the silicon substrate has a mean free path of about 3 mm at pressure lPa, which is shorter than the size of the processing chamber of the etching equipment (for example, the length from the silicon substrate to the top of the vacuum processing chamber is about 20 cm).
  • the number of re-injections is estimated to be about 15 from Monte Carlo calculations without considering the gas flow inside the vacuum processing chamber.
  • the effect of the flow is as follows. From the gas flow calculation, the concentration decreases by about 10% as the total flow rate of the gas increases by 100 sccm. Therefore, the number of re-injections is estimated to be about 13 times at the total flow rate lOOsccm.
  • oxygen is generated from the inner wall surface of the quartz chamber 13 of the etching device, and the surface area of the inner wall surface is about 2900 square centimeters, which can be cut off at about 15 nm per minute during plasma discharge. It is estimated to be about 2 seem.
  • the amount of oxygen incident on the silicon substrate is about 0.02 Pa in terms of pressure converted to oxygen radicals.
  • the oxygen radical converted pressure is a pressure when oxygen and oxygen radicals are all incident as oxygen radicals.
  • the amount of oxygen incident on the resist product on the silicon substrate is about 15%.
  • the resist product forming the protective film is assumed to be a carbon chloride compound because the resist is an organic polymer. Therefore, as a gas to be added, a chromium form of l Osccm was added to increase the number of carbon atoms incident on the silicon substrate. In this case, the pressure of the gas containing carbon on the wafer is about 0.23 Pa, which is the sum of the amount of the resist product and the form of the cross-hole. The ratio of the amount of oxygen incident to the amount of carbon-containing gas (carbon incident) is about 9%.
  • the amount of abrasion on the side of the Al-Cu-Si alloy can be improved by adding more than 7 sccm of black hole form.
  • the ratio of the number of oxygen atoms and the number of carbon atoms incident on the substrate is about 10%.
  • a good shape is obtained, and the generation of dust in the apparatus of the embodiment is low between 10 and 25 sccm.
  • the oxygen-Z carbon injection ratio of 25 sccm is 5%.
  • the resist area is about 30%, the amount of generated resist products is reduced by about 40%, so it is necessary to increase the amount of closed form introduced compared to the case where the resist area is 50%. There is. In this case, it is necessary to add more than 12 sccm.
  • the output of the RF bias is lowered and the selectivity to the resist is raised, the amount of resist products generated decreases, so it is necessary to increase the amount of black form added.
  • the selectivity is doubled to about 4 with a resist area of 50%, the side etching is reduced by adding about 15 sccm of the cross-hole form, and the side etching is about the measurement limit with the addition of 20 sccm or more. become.
  • the following equation shows the ratio of the number of oxygen atoms to the number of carbon atoms incident on the wafer, and by introducing the aperture form so that this value is 10% or less, a sufficient processed shape can be obtained. .
  • a particularly desirable area is 5 to 9%.
  • etching gas benzene or methane or its octalogenide is used.
  • Additional gas other than chloroform is ethane, methane, propane or butane fluorine, chlorine or bromine, or carborane a halogen substituents carbon tetrabromide (CBr4, CHBr 3, etc.) or a carborane chloride compound (CC1 3 BC1 2, CHC BC , CC1 2 (BC1 2) 2, CHC1 (BC1 2) 2, BC1 (CHC1 2) 2
  • CBr4, CHBr 3, etc. or a carborane chloride compound (CC1 3 BC1 2, CHC BC , CC1 2 (BC1 2) 2, CHC1 (BC1 2) 2, BC1 (CHC1 2) 2
  • FIG. 1 Another embodiment of the dry etching apparatus according to the present invention is shown in FIG.
  • an etching gas is introduced into the vacuum processing chamber 1, a high frequency of 2.45 GHz is generated in the microwave generator 2, and this high frequency is transported to the vacuum processing chamber 1 through the waveguide 3 to generate gas plasma.
  • Two solenoid coils 4 for generating a magnetic field are arranged around the vacuum processing chamber for high-efficiency discharge, and two coil currents are controlled so that a 875 Gauss magnetic field is almost directly above the processing table.
  • High-density plasma is generated using Tron resonance.
  • the vacuum processing chamber 1 has a processing table 5 on which an object 6 (often a wafer) is placed and subjected to etching by gas plasma.
  • the etching gas is introduced into the vacuum processing chamber 1 through the gas flow control device, and is exhausted out of the vacuum processing chamber 1 by the exhaust pump 7.
  • the processing table 5 on which the object is placed is equipped with an RF power supply 12 and can apply an RF bias from 400 Hz to 13.56 MHz.
  • a gas inlet 701 of the processing table is provided near the outer periphery of the processing table so that gas is efficiently introduced into the two-face area near the workpiece. ing.
  • the 12-inch silicon substrate is transported to this device. As shown in FIG. 3, this silicon substrate has a silicon dioxide film 25, a lower TiN film 24, an Al-Cu-Si alloy film 23, an upper TiN film 22 and a mask pattern 26 on the substrate 26.
  • the resist mask 21 onto which the pattern was transferred was formed.
  • the width of the resist mask is 300 nm, and the area of the resist is 20% of the silicon substrate.
  • the processing table temperature is 50, the total pressure is 1 Pa, the RF power is 800 kHz, and the power is 120 W.
  • the ratio of the number of oxygen atoms and the number of carbon atoms incident on the silicon substrate is about 7.5%, and the Al-Cu-Si alloy side surface is hardly abraded or fattened. Furthermore, there is no difference in the abrasion of the Al-Cu-Si side surface on the center and outside of the silicon substrate, and the pattern in the substrate is uniformly etched. On the other hand, when the form gas is not introduced from the periphery of the processing table, the re-injection of the resist product is large near the center of the silicon substrate, and the number of re-injections is reduced on the outside due to exhaust gas. It was difficult to process uniformly.
  • FIG. 1 Another embodiment of the dry etching apparatus according to the present invention is shown in FIG.
  • an etching gas is introduced into the vacuum processing chamber 1, a high frequency of 2.45 GHz is generated in the microwave generator 2, and this high frequency is transported to the vacuum processing chamber 1 through the waveguide 3 to generate gas plasma.
  • High Two solenoid coils 4 for generating a magnetic field are placed around the vacuum processing chamber for efficient discharge, and the two coil currents are controlled so that the 875 Gauss magnetic field is almost directly above the processing table.
  • a high-density plasma is generated using resonance.
  • the vacuum processing chamber 1 has a processing table 5 on which an object 6 to be processed is placed, and an etching process is performed by gas plasma.
  • the etching gas is introduced into the vacuum processing chamber 1 through the gas flow control device, and is exhausted out of the vacuum processing chamber 1 by the exhaust pump 7.
  • the processing table 5 on which the object is to be installed is equipped with an RF power supply 12 and can apply an RF bias from 400 Hz to 13.56 MHz.
  • a carbon ring 801 with a height of 1 cm is installed near the outer periphery of the processing table, which is in the near surface area.
  • a 12-inch silicon substrate is transported to this device.
  • the silicon substrate transfers a gay oxide film 25, a lower TiN film 24, an Al-Cu-Si alloy film 23, an upper TiN film 22 and a mask pattern on the substrate 26 as shown in FIG.
  • the resist mask 21 thus formed is formed.
  • the pattern width of the resist mask is 300 nm, and the area of the resist is 20% of the silicon substrate.
  • the processing table temperature is 50 ⁇
  • total pressure is 1 Pa
  • RF power is 800 kHz
  • 120 W The introduced gas is introduced from the upper gas inlet by 150sccm of chlorine, 50sccm of boron trichloride, and 4sccm of the form of the inlet, and etching of the silicon substrate is carried.
  • the oxygen-Z carbon ratio on the silicon substrate is approximately 7.5%, including the gas (approximately 3 sccm) generated when the carbon ring is cut, and the side surface of the Al-Cu-Si alloy is cut or thickened (forward taper). ) Hardly occurs. Furthermore, there is a difference in the abrasion of the Al-Cu-Si side surfaces on the center and outside of the silicon substrate. Therefore, the pattern in the substrate is uniformly etched. On the other hand, when the carbon ring is not introduced near the outer periphery of the processing table, the re-injection of the resist product is large near the center of the silicon substrate, and the number of re-injections is reduced on the outside of the silicon substrate. It was difficult.
  • a wiring having a width of about 100 nm is formed on a MOS transistor having a gate length and a width of about 100 nm formed on a 6-inch silicon substrate.
  • a MOS transistor 121, a capacitor and a polysilicon wiring are formed on a silicon substrate, and the wiring is insulated by a silicon dioxide film 25.
  • a lower TiN film 24, an Al-Cu-Si alloy film 23, an upper TiN film 22 and a resist film 21 to which a mask pattern is transferred are formed.
  • Part of the lower TiN is electrically connected to the MOS transistor and the polysilicon wiring via a contact hole 122 filled with polysilicon. By etching this substrate without side etching, the first layer wiring is formed.
  • the resist area on the silicon substrate is about 30%.
  • the silicon substrate is carried into the etching equipment and the TiN / Al-Cu-Si / TiN film is processed.
  • the gas to be introduced is about 80 sccm of chlorine, about 20 sccm of boron trichloride, and about 20 sccm of porcelain form.
  • etching is performed under these etching conditions to remove the resist, a wiring is formed with almost no scraping or fattening of the Al-Si-Cu wiring side surface as shown in FIG. This makes it possible to process wiring with a width of about 100 nm, which is almost equal to the gate width. You.
  • a silicon dioxide film containing phosphorus and contact holes are formed on the substrate on which the wiring has been processed, and a second-layer TiN / Al-Cu-Si / TiN wiring is further processed thereon.
  • a semiconductor device is manufactured. Since the processing dimensions of the wiring processing are as small as about 100 nm, which is about the gate length, the semiconductor device will be a highly integrated semiconductor device. In particular, by reducing the processing dimensions of the wiring, it becomes possible to reduce the number of wiring layers and to shorten the wiring length. Therefore, by using the wiring etching method according to the present invention, it is possible to manufacture a semiconductor device which operates at high speed at lower cost.
  • the black-hole form gas was not added, the side surface of the Cu-Si film was polished, and the amount of erosion exceeded the width of the Al-Cu-Si alloy film (about 100 nm).
  • fine wiring processing of a semiconductor device can be performed by using the etching method according to the present invention.
  • the gas type is changed to carborane chloride, carbon bromide, or the like, such wiring processing can be similarly performed even if the gas is introduced from the vicinity of the etching processing table.
  • FIG. 1 Another embodiment of the dry etching apparatus according to the present invention is shown in FIG.
  • an etching gas is introduced into the vacuum processing chamber 1, a high frequency of 2.45GHz is generated in the microphone mouth wave generator 2, and this high frequency is transported to the vacuum processing chamber 1 through the waveguide 3 to generate gas plasma.
  • two solenoid coils 4 for generating a magnetic field are arranged around the vacuum processing chamber, and the two coil currents are controlled so that the 875 Gauss magnetic field is almost directly above the processing table.
  • the vacuum processing chamber 1 has a processing table 5 An object to be processed 6 is placed on this, and etching is performed by gas plasma.
  • the etching gas is introduced into the vacuum processing chamber 1 through the gas flow control device, and is exhausted out of the vacuum processing chamber 1 by the exhaust pump 7.
  • the processing table 5 on which the object is to be installed is equipped with an RF power supply 12 and can apply an RF bias from 400 Hz to 13.56 MHz.
  • the inner wall of the quartz chamber 13 is coated with a silicon nitride film 110 so that oxygen does not come out.
  • a 6-inch silicon substrate is transported to this device.
  • This silicon substrate has a silicon oxide film, a lower TiN film, an Al-Cu-Si alloy film, an upper TiN film, and a resist mask on which a mask pattern is transferred, formed on a substrate.
  • the pattern width of the resist mask is 300 nm, and the area of the resist is 50% of the silicon substrate.
  • the substrate is transported to an etching apparatus, and 70 sccm of chlorine gas and 30 sccm of boron trichloride gas are introduced into the etching apparatus as an etching gas, and etching is performed so that the total pressure becomes 1 Pa.
  • the substrate temperature during etching is 50 ° C, and the RF bias applied to the substrate is 800 kHz and 70 W is applied.
  • Etching is performed in the order of upper TiN, Al-Cu-Si alloy and lower TiN.TiN etching rate is about 450 nm / min, Al-Cu-Si alloy is about 750 nm / min, and resist is about 350 nm / min. min.
  • a method of reducing the supply amount of oxygen gas to 0.3% can also be achieved by reducing the area coated with the silicon nitride film to about 80%.
  • By controlling the amount of oxygen gas added between O.OGsccm and 0.6sccm highly accurate anisotropic processing of Al-Cu-Si alloy film can be performed.
  • This added amount of oxygen gas corresponds to 0.06% to 0.6% of the total gas flow.
  • the incident ratio of oxygen-Z carbon is about 2 to 10% in consideration of a minute amount of oxygen mixed from the inner wall surface.
  • the effects of the present invention are not limited to the above-described microwave etching apparatus, and the same effects can be obtained by other apparatuses such as RIE, magnetron RIE, helicon resonance RIE, and inductively coupled RIE.
  • Industrial applicability is not limited to the above-described microwave etching apparatus, and the same effects can be obtained by other apparatuses such as RIE, magnetron RIE, helicon resonance RIE, and inductively coupled RIE.
  • the present invention is excellent in fine processing of a semiconductor device and is suitable for etching a metal film, particularly an aluminum film, but can also be applied to etching of an insulating film and the like.

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Abstract

On effectue l'attaque chimique à sec d'une pièce en alimentant cette dernière en oxygène et en carbone, de sorte que le rapport entre le nombre d'atomes d'oxygène et le nombre d'atomes de carbone devient égal ou inférieur à 0,1, en commandant le dépôt d'une couche protectrice et en procédant à l'attaque chimique. Ceci permet de limiter l'attaque chimique secondaire dans une opération de câblage et de réaliser un câblage encore plus petit avec une extrême précision dimensionnelle, même si le taux de sélection d'une résine photosensible est accru.
PCT/JP1996/002227 1996-08-07 1996-08-07 Procede et dispositif d'attaque chimique a sec WO1998006126A1 (fr)

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PCT/JP1996/002227 WO1998006126A1 (fr) 1996-08-07 1996-08-07 Procede et dispositif d'attaque chimique a sec
PCT/JP1996/003612 WO1998006128A1 (fr) 1996-08-07 1996-12-11 Procede et dispositif d'attaque chimique a sec

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JPH01305835A (ja) * 1988-05-31 1989-12-11 Nippon Tungsten Co Ltd 窒化珪素被覆石英ガラス容器
JPH03110846A (ja) * 1989-09-25 1991-05-10 Sony Corp 配線の形成方法
JPH05211146A (ja) * 1991-11-18 1993-08-20 Matsushita Electric Ind Co Ltd 金属配線の腐食防止方法
JPH0697126A (ja) * 1992-09-11 1994-04-08 Toshiba Corp 半導体のドライエッチング方法及びその半導体のドライエッチング装置
JPH07211696A (ja) * 1994-01-18 1995-08-11 Sony Corp ドライエッチング方法
JPH07326607A (ja) * 1995-01-30 1995-12-12 Hitachi Ltd 試料処理方法

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JPS52131471A (en) * 1976-04-28 1977-11-04 Hitachi Ltd Surface treatment of substrate
JPS5687670A (en) * 1979-12-15 1981-07-16 Anelva Corp Dry etching apparatus
JPS6159833A (ja) * 1984-08-31 1986-03-27 Hitachi Ltd プラズマ処理装置
JPS63142634A (ja) * 1986-12-05 1988-06-15 Oki Electric Ind Co Ltd 半導体製造装置
JPH02291131A (ja) * 1989-04-28 1990-11-30 Sony Corp バリアメタル／アルミニウム系積層膜のドライエッチング方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01305835A (ja) * 1988-05-31 1989-12-11 Nippon Tungsten Co Ltd 窒化珪素被覆石英ガラス容器
JPH03110846A (ja) * 1989-09-25 1991-05-10 Sony Corp 配線の形成方法
JPH05211146A (ja) * 1991-11-18 1993-08-20 Matsushita Electric Ind Co Ltd 金属配線の腐食防止方法
JPH0697126A (ja) * 1992-09-11 1994-04-08 Toshiba Corp 半導体のドライエッチング方法及びその半導体のドライエッチング装置
JPH07211696A (ja) * 1994-01-18 1995-08-11 Sony Corp ドライエッチング方法
JPH07326607A (ja) * 1995-01-30 1995-12-12 Hitachi Ltd 試料処理方法

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