WO1998002027A2 - Procede de production de pellicules de diamant faisant appel a un systeme de synthese en phase gazeuse - Google Patents

Procede de production de pellicules de diamant faisant appel a un systeme de synthese en phase gazeuse Download PDF

Info

Publication number
WO1998002027A2
WO1998002027A2 PCT/RU1997/000229 RU9700229W WO9802027A2 WO 1998002027 A2 WO1998002027 A2 WO 1998002027A2 RU 9700229 W RU9700229 W RU 9700229W WO 9802027 A2 WO9802027 A2 WO 9802027A2
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
deposition
hydrogen
gas flow
methane
Prior art date
Application number
PCT/RU1997/000229
Other languages
English (en)
French (fr)
Other versions
WO1998002027A3 (fr
Inventor
Alexandr Tursunovich Rakhimov
Nikolai Vladislavovich Suetin
Vladimir Anatolevich Samorodov
Original Assignee
Alexandr Tursunovich Rakhimov
Nikolai Vladislavovich Suetin
Vladimir Anatolevich Samorodov
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alexandr Tursunovich Rakhimov, Nikolai Vladislavovich Suetin, Vladimir Anatolevich Samorodov filed Critical Alexandr Tursunovich Rakhimov
Priority to DE69720791T priority Critical patent/DE69720791T2/de
Priority to JP50590198A priority patent/JP2001506572A/ja
Priority to EP97933934A priority patent/EP0959148B1/en
Priority to AU37112/97A priority patent/AU3711297A/en
Publication of WO1998002027A2 publication Critical patent/WO1998002027A2/ru
Publication of WO1998002027A3 publication Critical patent/WO1998002027A3/ru

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0236—Pretreatment of the material to be coated by cleaning or etching by etching with a reactive gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/271—Diamond only using hot filaments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
PCT/RU1997/000229 1996-07-16 1997-07-15 Procede de production de pellicules de diamant faisant appel a un systeme de synthese en phase gazeuse WO1998002027A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE69720791T DE69720791T2 (de) 1996-07-16 1997-07-15 Verfahren zur herstellung von diamandfilmen unter verwendung eines dampfphasensynthesesystems
JP50590198A JP2001506572A (ja) 1996-07-16 1997-07-15 気相合成によるダイヤモンド皮膜の形成方法
EP97933934A EP0959148B1 (en) 1996-07-16 1997-07-15 Method for producing diamond films using a vapour-phase synthesis system
AU37112/97A AU3711297A (en) 1996-07-16 1997-07-15 Method for producing diamond films using a vapour-phase synthesis system

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
RU96113270 1996-07-16
RU96113270/09A RU2158037C2 (ru) 1996-07-16 1996-07-16 Способ получения алмазных пленок методом газофазного синтеза

Publications (2)

Publication Number Publication Date
WO1998002027A2 true WO1998002027A2 (fr) 1998-01-22
WO1998002027A3 WO1998002027A3 (fr) 1998-02-19

Family

ID=20182649

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/RU1997/000229 WO1998002027A2 (fr) 1996-07-16 1997-07-15 Procede de production de pellicules de diamant faisant appel a un systeme de synthese en phase gazeuse

Country Status (7)

Country Link
EP (1) EP0959148B1 (ru)
JP (1) JP2001506572A (ru)
KR (1) KR100532864B1 (ru)
AU (1) AU3711297A (ru)
DE (1) DE69720791T2 (ru)
RU (1) RU2158037C2 (ru)
WO (1) WO1998002027A2 (ru)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1081734A1 (en) * 1998-05-19 2001-03-07 Alexandr Alexandrovich Blyablin Cold-emission film-type cathode and method for producing the same

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6181055B1 (en) 1998-10-12 2001-01-30 Extreme Devices, Inc. Multilayer carbon-based field emission electron device for high current density applications
KR100360686B1 (ko) * 2000-07-27 2002-11-13 일진나노텍 주식회사 탄소나노튜브 또는 탄소나노섬유 합성용 기상합성장치 및이를 사용한 합성 방법
AU2000278552A1 (en) * 2000-10-04 2002-04-15 Extreme Devices Incorporated Carbon-based field emission electron device for high current density applications
US6624578B2 (en) 2001-06-04 2003-09-23 Extreme Devices Incorporated Cathode ray tube having multiple field emission cathodes
DE102004012044A1 (de) * 2004-03-11 2005-09-29 Infineon Technologies Ag Verfahren zum Herstellen einer im Wesentlichen aus Kohlenstoff bestehenden Schicht, eine Sondeneinheit, ein Verfahren zum Herstellen einer Sondeneinheit und ein Rasterkraftmikroskop mit einer Sondeneinheit
RU2653036C2 (ru) * 2016-08-24 2018-05-04 Федеральное государственное бюджетное учреждение науки Институт теплофизики им. С.С. Кутателадзе Сибирского отделения Российской академии наук (ИТ СО РАН) Способ осаждения алмазных плёнок из термически активированной смеси газов и реактор для его реализации
RU2656627C1 (ru) * 2017-06-27 2018-06-06 Степан Андреевич Линник Способ селективного осаждения поликристаллического алмазного покрытия на кремниевые основания
CN111747414B (zh) * 2020-06-18 2023-03-03 太原理工大学 多层碳化硅/二氧化硅/金刚石复合自支撑膜及制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3714334A (en) * 1971-05-03 1973-01-30 Diamond Squared Ind Inc Process for epitaxial growth of diamonds
SU966782A1 (ru) * 1979-11-05 1982-10-15 Предприятие П/Я М-5912 Способ изготовлени многоострийного автокатода
EP0528322A1 (en) * 1991-08-20 1993-02-24 Motorola, Inc. A molded field emission electron emitter employing a diamond coating and method for producing same
EP0528391A1 (en) * 1991-08-20 1993-02-24 Motorola, Inc. A field emission electron source employing a diamond coating and method for producing same
US5474021A (en) * 1992-09-24 1995-12-12 Sumitomo Electric Industries, Ltd. Epitaxial growth of diamond from vapor phase

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63159292A (ja) * 1986-12-23 1988-07-02 Showa Denko Kk ダイヤモンド膜の作製方法
US5006203A (en) * 1988-08-12 1991-04-09 Texas Instruments Incorporated Diamond growth method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3714334A (en) * 1971-05-03 1973-01-30 Diamond Squared Ind Inc Process for epitaxial growth of diamonds
SU966782A1 (ru) * 1979-11-05 1982-10-15 Предприятие П/Я М-5912 Способ изготовлени многоострийного автокатода
EP0528322A1 (en) * 1991-08-20 1993-02-24 Motorola, Inc. A molded field emission electron emitter employing a diamond coating and method for producing same
EP0528391A1 (en) * 1991-08-20 1993-02-24 Motorola, Inc. A field emission electron source employing a diamond coating and method for producing same
US5474021A (en) * 1992-09-24 1995-12-12 Sumitomo Electric Industries, Ltd. Epitaxial growth of diamond from vapor phase

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP0959148A2 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1081734A1 (en) * 1998-05-19 2001-03-07 Alexandr Alexandrovich Blyablin Cold-emission film-type cathode and method for producing the same
EP1081734A4 (en) * 1998-05-19 2003-07-09 Ooo Vysokie T FILM-SHAPED COLD-EMISSIONS CATHODE AND METHOD FOR THE PRODUCTION THEREOF

Also Published As

Publication number Publication date
RU2158037C2 (ru) 2000-10-20
KR100532864B1 (ko) 2005-12-02
JP2001506572A (ja) 2001-05-22
DE69720791D1 (de) 2003-05-15
KR20000023788A (ko) 2000-04-25
WO1998002027A3 (fr) 1998-02-19
AU3711297A (en) 1998-02-09
EP0959148A4 (en) 2001-09-12
EP0959148B1 (en) 2003-04-09
DE69720791T2 (de) 2004-02-12
EP0959148A2 (en) 1999-11-24

Similar Documents

Publication Publication Date Title
CA1336704C (en) Method of producing sintered hard metal with diamond film
CA2152769C (en) Synthesizing diamond film
Gallagher Some physics and chemistry of hot-wire deposition
WO1998002027A2 (fr) Procede de production de pellicules de diamant faisant appel a un systeme de synthese en phase gazeuse
JPS596009B2 (ja) 可とう性超電導体の製造方法
JP4295830B2 (ja) 超硬合金基材または炭化物含有サーメット基材の硬質材料による被覆
EP1081734A1 (en) Cold-emission film-type cathode and method for producing the same
US5626908A (en) Method for producing silicon nitride based member coated with film of diamond
JPS62138395A (ja) ダイヤモンド膜の製造方法
RU96113270A (ru) Способ получения алмазных пленок методом газофазного синтеза
Konyashin et al. A novel approach to deposition of cubic boron nitride coatings
US4869929A (en) Process for preparing sic protective films on metallic or metal impregnated substrates
Nagasawa et al. Mechanisms of SiC growth by alternate supply of SiH2Cl2 and C2H2
JPS6228452A (ja) 編針
Brunsteiner et al. Influence of carbon monoxide—addition to the reaction gas on the hot-filament diamond deposition
JPS5925968A (ja) 多重被覆材料およびその製造法
JPH05279854A (ja) ダイヤモンド膜の形成方法
JPH05209276A (ja) ダイヤモンド被覆部材の製造方法
JPH07116606B2 (ja) ダイヤモンド被覆炭素部材
JPS63129099A (ja) ダイヤモンド薄膜又はダイヤモンド状薄膜の製造方法
JPS6257802A (ja) 硬質炭素被覆部品
JP2709150B2 (ja) 気相法ダイヤモンドのコーティング方法
JPS6340800A (ja) 高硬度窒化ホウ素の合成法
JP2584480B2 (ja) ダイヤモンド膜の製造方法
JPS63215596A (ja) ダイヤモンド薄膜又はダイヤモンド状薄膜の製造方法

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AL AM AT AU AZ BA BB BG BR BY CA CH CN CU CZ DE DK EE ES FI GB GE HU IL IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK TJ TM TR TT UA UG US UZ VN

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE CH DE DK ES FI FR GB GR IE IT LU MC NL PT SE

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
WWE Wipo information: entry into national phase

Ref document number: 1019997000268

Country of ref document: KR

ENP Entry into the national phase in:

Ref country code: JP

Ref document number: 1998 505901

Kind code of ref document: A

Format of ref document f/p: F

WWE Wipo information: entry into national phase

Ref document number: 1997933934

Country of ref document: EP

REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

WWP Wipo information: published in national office

Ref document number: 1997933934

Country of ref document: EP

NENP Non-entry into the national phase in:

Ref country code: CA

WWP Wipo information: published in national office

Ref document number: 1019997000268

Country of ref document: KR

WWG Wipo information: grant in national office

Ref document number: 1997933934

Country of ref document: EP

WWG Wipo information: grant in national office

Ref document number: 1019997000268

Country of ref document: KR