WO1997047020B1 - Dispositif emetteur d'electrons a grille et son procede de fabrication - Google Patents
Dispositif emetteur d'electrons a grille et son procede de fabricationInfo
- Publication number
- WO1997047020B1 WO1997047020B1 PCT/US1997/009196 US9709196W WO9747020B1 WO 1997047020 B1 WO1997047020 B1 WO 1997047020B1 US 9709196 W US9709196 W US 9709196W WO 9747020 B1 WO9747020 B1 WO 9747020B1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- gate
- layer
- openings
- insulating
- particles
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000463 material Substances 0.000 claims abstract 49
- 239000002245 particle Substances 0.000 claims abstract 32
- 230000000875 corresponding Effects 0.000 claims 13
- 238000000151 deposition Methods 0.000 claims 11
- 238000005530 etching Methods 0.000 claims 10
- 239000000126 substance Substances 0.000 claims 3
- 230000003247 decreasing Effects 0.000 claims 1
- 230000005684 electric field Effects 0.000 claims 1
- 239000011810 insulating material Substances 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
Abstract
L'invention concerne un procédé de fabrication d'un émetteur d'électrons à grille, procédé au cours duquel des particules (26) sont déposées sur une couche isolante (24). La matière de grille est formée sur la couche isolante dans l'espace se trouvant entre les particules, celles-ci ainsi que toute matière sus-jacente étant ensuite retirés. La matière de grille restant forme une couche de grille (28A ou 48A) dans laquelle sont ménagées les ouvertures de grille (30 ou 50), au niveau des emplacements des particules retirées. Lorsque le dépôt de la matière de grille est effectué de manière à ce qu'une partie de celle-ci s'étende dans les espaces se trouvant sous les particules, les ouvertures de grille sont coniques. La couche isolante est attaquée à l'acide par les ouvertures de grille afin de former des ouvertures diélectriques (32 ou 52). Des éléments émetteurs d'électrons (36A ou 56A) sont formés dans les ouvertures diélectriques. Ceci consiste généralement à faire passer la matière émettrice par les ouvertures de grille pour l'introduire dans les ouvertures diélectriques et à utiliser une couche de décollement (34), ou une technique électrochimique, pour retirer la matière émettrice excédentaire.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP97926809A EP1018131B1 (fr) | 1996-06-07 | 1997-06-05 | Dispositif emetteur d'electrons a grille et son procede de fabrication |
DE69740027T DE69740027D1 (de) | 1996-06-07 | 1997-06-05 | Gittergesteuerte elektronenemissionsvorrichtung und herstellungsverfahren dafür |
KR1019980710147A KR100357812B1 (ko) | 1996-06-07 | 1997-06-05 | 전자방출소자및그제조방법 |
JP50069698A JP3736857B2 (ja) | 1996-06-07 | 1997-06-05 | 電子放出デバイスの製造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/660,537 US5865657A (en) | 1996-06-07 | 1996-06-07 | Fabrication of gated electron-emitting device utilizing distributed particles to form gate openings typically beveled and/or combined with lift-off or electrochemical removal of excess emitter material |
US660,537 | 1996-06-07 |
Publications (3)
Publication Number | Publication Date |
---|---|
WO1997047020A1 WO1997047020A1 (fr) | 1997-12-11 |
WO1997047020B1 true WO1997047020B1 (fr) | 1998-02-05 |
WO1997047020A9 WO1997047020A9 (fr) | 1998-03-12 |
Family
ID=24649927
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1997/009196 WO1997047020A1 (fr) | 1996-06-07 | 1997-06-05 | Dispositif emetteur d'electrons a grille et son procede de fabrication |
Country Status (7)
Country | Link |
---|---|
US (1) | US5865657A (fr) |
EP (1) | EP1018131B1 (fr) |
JP (1) | JP3736857B2 (fr) |
KR (1) | KR100357812B1 (fr) |
DE (1) | DE69740027D1 (fr) |
TW (1) | TW398005B (fr) |
WO (1) | WO1997047020A1 (fr) |
Families Citing this family (35)
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KR100323289B1 (ko) * | 1996-06-07 | 2002-03-08 | 컨데슨트 인터렉추얼 프로퍼티 서비시스 인코포레이티드 | 게이트개구부를한정하기위해분산된입자를이용하는게이트형전자방출장치의제조방법 |
US6187603B1 (en) | 1996-06-07 | 2001-02-13 | Candescent Technologies Corporation | Fabrication of gated electron-emitting devices utilizing distributed particles to define gate openings, typically in combination with lift-off of excess emitter material |
US6015323A (en) * | 1997-01-03 | 2000-01-18 | Micron Technology, Inc. | Field emission display cathode assembly government rights |
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US6039621A (en) | 1997-07-07 | 2000-03-21 | Candescent Technologies Corporation | Gate electrode formation method |
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EP1073090A3 (fr) * | 1999-07-27 | 2003-04-16 | Iljin Nanotech Co., Ltd. | Dispositif d'affichage à émission de champ utilisant des nanotubes de carbone, et procédé de fabrication |
JP2001043790A (ja) * | 1999-07-29 | 2001-02-16 | Sony Corp | 冷陰極電界電子放出素子の製造方法及び冷陰極電界電子放出表示装置の製造方法 |
US6364730B1 (en) * | 2000-01-18 | 2002-04-02 | Motorola, Inc. | Method for fabricating a field emission device and method for the operation thereof |
US6400068B1 (en) * | 2000-01-18 | 2002-06-04 | Motorola, Inc. | Field emission device having an emitter-enhancing electrode |
RU2194329C2 (ru) * | 2000-02-25 | 2002-12-10 | ООО "Высокие технологии" | Способ получения адресуемого автоэмиссионного катода и дисплейной структуры на его основе |
US6884093B2 (en) | 2000-10-03 | 2005-04-26 | The Trustees Of Princeton University | Organic triodes with novel grid structures and method of production |
US6822626B2 (en) * | 2000-10-27 | 2004-11-23 | Science Applications International Corporation | Design, fabrication, testing, and conditioning of micro-components for use in a light-emitting panel |
US6612889B1 (en) | 2000-10-27 | 2003-09-02 | Science Applications International Corporation | Method for making a light-emitting panel |
US6764367B2 (en) * | 2000-10-27 | 2004-07-20 | Science Applications International Corporation | Liquid manufacturing processes for panel layer fabrication |
US7288014B1 (en) | 2000-10-27 | 2007-10-30 | Science Applications International Corporation | Design, fabrication, testing, and conditioning of micro-components for use in a light-emitting panel |
US6570335B1 (en) * | 2000-10-27 | 2003-05-27 | Science Applications International Corporation | Method and system for energizing a micro-component in a light-emitting panel |
US6796867B2 (en) * | 2000-10-27 | 2004-09-28 | Science Applications International Corporation | Use of printing and other technology for micro-component placement |
US6545422B1 (en) * | 2000-10-27 | 2003-04-08 | Science Applications International Corporation | Socket for use with a micro-component in a light-emitting panel |
US6762566B1 (en) | 2000-10-27 | 2004-07-13 | Science Applications International Corporation | Micro-component for use in a light-emitting panel |
US6620012B1 (en) * | 2000-10-27 | 2003-09-16 | Science Applications International Corporation | Method for testing a light-emitting panel and the components therein |
US6935913B2 (en) * | 2000-10-27 | 2005-08-30 | Science Applications International Corporation | Method for on-line testing of a light emitting panel |
US6801001B2 (en) * | 2000-10-27 | 2004-10-05 | Science Applications International Corporation | Method and apparatus for addressing micro-components in a plasma display panel |
US7351607B2 (en) * | 2003-12-11 | 2008-04-01 | Georgia Tech Research Corporation | Large scale patterned growth of aligned one-dimensional nanostructures |
US20050189164A1 (en) * | 2004-02-26 | 2005-09-01 | Chang Chi L. | Speaker enclosure having outer flared tube |
GB0516783D0 (en) * | 2005-08-16 | 2005-09-21 | Univ Surrey | Micro-electrode device for dielectrophoretic characterisation of particles |
KR100831843B1 (ko) * | 2006-11-07 | 2008-05-22 | 주식회사 실트론 | 금속층 위에 성장된 화합물 반도체 기판, 그 제조 방법 및이를 이용한 화합물 반도체 소자 |
TWI441237B (zh) * | 2012-05-31 | 2014-06-11 | Au Optronics Corp | 場發射顯示器之畫素結構的製造方法 |
WO2016077586A1 (fr) | 2014-11-14 | 2016-05-19 | Mankin Max N | Fabrication de grille sous vide et de structure d'électrode à l'échelle nanométrique dotées d'espaceurs diélectriques à rapport d'aspect élevé entre la grille et l'électrode |
US9548180B2 (en) | 2014-11-21 | 2017-01-17 | Elwha Llc | Nanoparticle-templated lithographic patterning of nanoscale electronic components |
FR3044826B1 (fr) * | 2015-12-02 | 2018-04-20 | Commissariat Energie Atomique | Agencement pour empilement de cellule photovoltaique en couches minces et procede de fabrication associe |
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JP3007654B2 (ja) * | 1990-05-31 | 2000-02-07 | 株式会社リコー | 電子放出素子の製造方法 |
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-
1996
- 1996-06-07 US US08/660,537 patent/US5865657A/en not_active Expired - Lifetime
-
1997
- 1997-06-05 JP JP50069698A patent/JP3736857B2/ja not_active Expired - Fee Related
- 1997-06-05 WO PCT/US1997/009196 patent/WO1997047020A1/fr active IP Right Grant
- 1997-06-05 KR KR1019980710147A patent/KR100357812B1/ko not_active IP Right Cessation
- 1997-06-05 EP EP97926809A patent/EP1018131B1/fr not_active Expired - Lifetime
- 1997-06-05 DE DE69740027T patent/DE69740027D1/de not_active Expired - Lifetime
- 1997-06-07 TW TW086107876A patent/TW398005B/zh not_active IP Right Cessation
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