WO1997047020B1 - Dispositif emetteur d'electrons a grille et son procede de fabrication - Google Patents

Dispositif emetteur d'electrons a grille et son procede de fabrication

Info

Publication number
WO1997047020B1
WO1997047020B1 PCT/US1997/009196 US9709196W WO9747020B1 WO 1997047020 B1 WO1997047020 B1 WO 1997047020B1 US 9709196 W US9709196 W US 9709196W WO 9747020 B1 WO9747020 B1 WO 9747020B1
Authority
WO
WIPO (PCT)
Prior art keywords
gate
layer
openings
insulating
particles
Prior art date
Application number
PCT/US1997/009196
Other languages
English (en)
Other versions
WO1997047020A9 (fr
WO1997047020A1 (fr
Filing date
Publication date
Priority claimed from US08/660,537 external-priority patent/US5865657A/en
Application filed filed Critical
Priority to EP97926809A priority Critical patent/EP1018131B1/fr
Priority to DE69740027T priority patent/DE69740027D1/de
Priority to KR1019980710147A priority patent/KR100357812B1/ko
Priority to JP50069698A priority patent/JP3736857B2/ja
Publication of WO1997047020A1 publication Critical patent/WO1997047020A1/fr
Publication of WO1997047020B1 publication Critical patent/WO1997047020B1/fr
Publication of WO1997047020A9 publication Critical patent/WO1997047020A9/fr

Links

Abstract

L'invention concerne un procédé de fabrication d'un émetteur d'électrons à grille, procédé au cours duquel des particules (26) sont déposées sur une couche isolante (24). La matière de grille est formée sur la couche isolante dans l'espace se trouvant entre les particules, celles-ci ainsi que toute matière sus-jacente étant ensuite retirés. La matière de grille restant forme une couche de grille (28A ou 48A) dans laquelle sont ménagées les ouvertures de grille (30 ou 50), au niveau des emplacements des particules retirées. Lorsque le dépôt de la matière de grille est effectué de manière à ce qu'une partie de celle-ci s'étende dans les espaces se trouvant sous les particules, les ouvertures de grille sont coniques. La couche isolante est attaquée à l'acide par les ouvertures de grille afin de former des ouvertures diélectriques (32 ou 52). Des éléments émetteurs d'électrons (36A ou 56A) sont formés dans les ouvertures diélectriques. Ceci consiste généralement à faire passer la matière émettrice par les ouvertures de grille pour l'introduire dans les ouvertures diélectriques et à utiliser une couche de décollement (34), ou une technique électrochimique, pour retirer la matière émettrice excédentaire.
PCT/US1997/009196 1996-06-07 1997-06-05 Dispositif emetteur d'electrons a grille et son procede de fabrication WO1997047020A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP97926809A EP1018131B1 (fr) 1996-06-07 1997-06-05 Dispositif emetteur d'electrons a grille et son procede de fabrication
DE69740027T DE69740027D1 (de) 1996-06-07 1997-06-05 Gittergesteuerte elektronenemissionsvorrichtung und herstellungsverfahren dafür
KR1019980710147A KR100357812B1 (ko) 1996-06-07 1997-06-05 전자방출소자및그제조방법
JP50069698A JP3736857B2 (ja) 1996-06-07 1997-06-05 電子放出デバイスの製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/660,537 US5865657A (en) 1996-06-07 1996-06-07 Fabrication of gated electron-emitting device utilizing distributed particles to form gate openings typically beveled and/or combined with lift-off or electrochemical removal of excess emitter material
US660,537 1996-06-07

Publications (3)

Publication Number Publication Date
WO1997047020A1 WO1997047020A1 (fr) 1997-12-11
WO1997047020B1 true WO1997047020B1 (fr) 1998-02-05
WO1997047020A9 WO1997047020A9 (fr) 1998-03-12

Family

ID=24649927

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1997/009196 WO1997047020A1 (fr) 1996-06-07 1997-06-05 Dispositif emetteur d'electrons a grille et son procede de fabrication

Country Status (7)

Country Link
US (1) US5865657A (fr)
EP (1) EP1018131B1 (fr)
JP (1) JP3736857B2 (fr)
KR (1) KR100357812B1 (fr)
DE (1) DE69740027D1 (fr)
TW (1) TW398005B (fr)
WO (1) WO1997047020A1 (fr)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7158031B2 (en) 1992-08-12 2007-01-02 Micron Technology, Inc. Thin, flexible, RFID label and system for use
US6417605B1 (en) * 1994-09-16 2002-07-09 Micron Technology, Inc. Method of preventing junction leakage in field emission devices
US5865659A (en) * 1996-06-07 1999-02-02 Candescent Technologies Corporation Fabrication of gated electron-emitting device utilizing distributed particles to define gate openings and utilizing spacer material to control spacing between gate layer and electron-emissive elements
KR100323289B1 (ko) * 1996-06-07 2002-03-08 컨데슨트 인터렉추얼 프로퍼티 서비시스 인코포레이티드 게이트개구부를한정하기위해분산된입자를이용하는게이트형전자방출장치의제조방법
US6187603B1 (en) 1996-06-07 2001-02-13 Candescent Technologies Corporation Fabrication of gated electron-emitting devices utilizing distributed particles to define gate openings, typically in combination with lift-off of excess emitter material
US6015323A (en) * 1997-01-03 2000-01-18 Micron Technology, Inc. Field emission display cathode assembly government rights
US6095883A (en) * 1997-07-07 2000-08-01 Candlescent Technologies Corporation Spatially uniform deposition of polymer particles during gate electrode formation
US6039621A (en) 1997-07-07 2000-03-21 Candescent Technologies Corporation Gate electrode formation method
US6339385B1 (en) 1997-08-20 2002-01-15 Micron Technology, Inc. Electronic communication devices, methods of forming electrical communication devices, and communication methods
JP3595718B2 (ja) * 1999-03-15 2004-12-02 株式会社東芝 表示素子およびその製造方法
EP1073090A3 (fr) * 1999-07-27 2003-04-16 Iljin Nanotech Co., Ltd. Dispositif d'affichage à émission de champ utilisant des nanotubes de carbone, et procédé de fabrication
JP2001043790A (ja) * 1999-07-29 2001-02-16 Sony Corp 冷陰極電界電子放出素子の製造方法及び冷陰極電界電子放出表示装置の製造方法
US6364730B1 (en) * 2000-01-18 2002-04-02 Motorola, Inc. Method for fabricating a field emission device and method for the operation thereof
US6400068B1 (en) * 2000-01-18 2002-06-04 Motorola, Inc. Field emission device having an emitter-enhancing electrode
RU2194329C2 (ru) * 2000-02-25 2002-12-10 ООО "Высокие технологии" Способ получения адресуемого автоэмиссионного катода и дисплейной структуры на его основе
US6884093B2 (en) 2000-10-03 2005-04-26 The Trustees Of Princeton University Organic triodes with novel grid structures and method of production
US6822626B2 (en) * 2000-10-27 2004-11-23 Science Applications International Corporation Design, fabrication, testing, and conditioning of micro-components for use in a light-emitting panel
US6612889B1 (en) 2000-10-27 2003-09-02 Science Applications International Corporation Method for making a light-emitting panel
US6764367B2 (en) * 2000-10-27 2004-07-20 Science Applications International Corporation Liquid manufacturing processes for panel layer fabrication
US7288014B1 (en) 2000-10-27 2007-10-30 Science Applications International Corporation Design, fabrication, testing, and conditioning of micro-components for use in a light-emitting panel
US6570335B1 (en) * 2000-10-27 2003-05-27 Science Applications International Corporation Method and system for energizing a micro-component in a light-emitting panel
US6796867B2 (en) * 2000-10-27 2004-09-28 Science Applications International Corporation Use of printing and other technology for micro-component placement
US6545422B1 (en) * 2000-10-27 2003-04-08 Science Applications International Corporation Socket for use with a micro-component in a light-emitting panel
US6762566B1 (en) 2000-10-27 2004-07-13 Science Applications International Corporation Micro-component for use in a light-emitting panel
US6620012B1 (en) * 2000-10-27 2003-09-16 Science Applications International Corporation Method for testing a light-emitting panel and the components therein
US6935913B2 (en) * 2000-10-27 2005-08-30 Science Applications International Corporation Method for on-line testing of a light emitting panel
US6801001B2 (en) * 2000-10-27 2004-10-05 Science Applications International Corporation Method and apparatus for addressing micro-components in a plasma display panel
US7351607B2 (en) * 2003-12-11 2008-04-01 Georgia Tech Research Corporation Large scale patterned growth of aligned one-dimensional nanostructures
US20050189164A1 (en) * 2004-02-26 2005-09-01 Chang Chi L. Speaker enclosure having outer flared tube
GB0516783D0 (en) * 2005-08-16 2005-09-21 Univ Surrey Micro-electrode device for dielectrophoretic characterisation of particles
KR100831843B1 (ko) * 2006-11-07 2008-05-22 주식회사 실트론 금속층 위에 성장된 화합물 반도체 기판, 그 제조 방법 및이를 이용한 화합물 반도체 소자
TWI441237B (zh) * 2012-05-31 2014-06-11 Au Optronics Corp 場發射顯示器之畫素結構的製造方法
WO2016077586A1 (fr) 2014-11-14 2016-05-19 Mankin Max N Fabrication de grille sous vide et de structure d'électrode à l'échelle nanométrique dotées d'espaceurs diélectriques à rapport d'aspect élevé entre la grille et l'électrode
US9548180B2 (en) 2014-11-21 2017-01-17 Elwha Llc Nanoparticle-templated lithographic patterning of nanoscale electronic components
FR3044826B1 (fr) * 2015-12-02 2018-04-20 Commissariat Energie Atomique Agencement pour empilement de cellule photovoltaique en couches minces et procede de fabrication associe

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3497929A (en) * 1966-05-31 1970-03-03 Stanford Research Inst Method of making a needle-type electron source
US3755704A (en) * 1970-02-06 1973-08-28 Stanford Research Inst Field emission cathode structures and devices utilizing such structures
US3665241A (en) * 1970-07-13 1972-05-23 Stanford Research Inst Field ionizer and field emission cathode structures and methods of production
JPS5325632B2 (fr) * 1973-03-22 1978-07-27
US3970887A (en) * 1974-06-19 1976-07-20 Micro-Bit Corporation Micro-structure field emission electron source
JPS5436828B2 (fr) * 1974-08-16 1979-11-12
FR2623013A1 (fr) * 1987-11-06 1989-05-12 Commissariat Energie Atomique Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ,utilisant cette source
US5053673A (en) * 1988-10-17 1991-10-01 Matsushita Electric Industrial Co., Ltd. Field emission cathodes and method of manufacture thereof
US5170092A (en) * 1989-05-19 1992-12-08 Matsushita Electric Industrial Co., Ltd. Electron-emitting device and process for making the same
EP0416625B1 (fr) * 1989-09-07 1996-03-13 Canon Kabushiki Kaisha Dispositif émetteur d'électrons et son procédé de fabrication, dispositif d'affichage et d'écriture par faisceau d'électrons utilisant ledit dispositif.
US5007873A (en) * 1990-02-09 1991-04-16 Motorola, Inc. Non-planar field emission device having an emitter formed with a substantially normal vapor deposition process
JP3007654B2 (ja) * 1990-05-31 2000-02-07 株式会社リコー 電子放出素子の製造方法
FR2663462B1 (fr) * 1990-06-13 1992-09-11 Commissariat Energie Atomique Source d'electrons a cathodes emissives a micropointes.
US5150192A (en) * 1990-09-27 1992-09-22 The United States Of America As Represented By The Secretary Of The Navy Field emitter array
US5150019A (en) * 1990-10-01 1992-09-22 National Semiconductor Corp. Integrated circuit electronic grid device and method
JP2550798B2 (ja) * 1991-04-12 1996-11-06 富士通株式会社 微小冷陰極の製造方法
US5249340A (en) * 1991-06-24 1993-10-05 Motorola, Inc. Field emission device employing a selective electrode deposition method
US5278472A (en) * 1992-02-05 1994-01-11 Motorola, Inc. Electronic device employing field emission devices with dis-similar electron emission characteristics and method for realization
KR950004516B1 (ko) * 1992-04-29 1995-05-01 삼성전관주식회사 필드 에미션 디스플레이와 그 제조방법
KR950008756B1 (ko) * 1992-11-25 1995-08-04 삼성전관주식회사 실리콘 전자방출소자 및 그의 제조방법
US5534743A (en) * 1993-03-11 1996-07-09 Fed Corporation Field emission display devices, and field emission electron beam source and isolation structure components therefor
KR0150252B1 (ko) * 1993-07-13 1998-10-01 모리시다 요이치 반도체 기억장치의 제조방법
US5378182A (en) * 1993-07-22 1995-01-03 Industrial Technology Research Institute Self-aligned process for gated field emitters
US5462467A (en) * 1993-09-08 1995-10-31 Silicon Video Corporation Fabrication of filamentary field-emission device, including self-aligned gate
US5564959A (en) * 1993-09-08 1996-10-15 Silicon Video Corporation Use of charged-particle tracks in fabricating gated electron-emitting devices
US5559389A (en) * 1993-09-08 1996-09-24 Silicon Video Corporation Electron-emitting devices having variously constituted electron-emissive elements, including cones or pedestals
EP0700065B1 (fr) * 1994-08-31 2001-09-19 AT&T Corp. Dispositif à émission de champ et procédé de fabrication
JP3304645B2 (ja) * 1994-09-22 2002-07-22 ソニー株式会社 電界放出型装置の製造方法
US5458520A (en) * 1994-12-13 1995-10-17 International Business Machines Corporation Method for producing planar field emission structure
US5676853A (en) * 1996-05-21 1997-10-14 Micron Display Technology, Inc. Mask for forming features on a semiconductor substrate and a method for forming the mask

Similar Documents

Publication Publication Date Title
WO1997047020B1 (fr) Dispositif emetteur d'electrons a grille et son procede de fabrication
US4307507A (en) Method of manufacturing a field-emission cathode structure
US4943343A (en) Self-aligned gate process for fabricating field emitter arrays
US5007873A (en) Non-planar field emission device having an emitter formed with a substantially normal vapor deposition process
US5865657A (en) Fabrication of gated electron-emitting device utilizing distributed particles to form gate openings typically beveled and/or combined with lift-off or electrochemical removal of excess emitter material
EP1038303B1 (fr) Resistance de forme specifique pour dispositif emetteur d'electrons, et son procede de fabrication
EP0985220B1 (fr) Fabrication de dispositif emetteur d'electrons dote d'une electrode d'emission de type echelle
WO1995017762A1 (fr) Dispositif emetteur de champ lateral et procede de fabrication dudit dispositif
US5696385A (en) Field emission device having reduced row-to-column leakage
WO1997047020A9 (fr) Dispositif emetteur d'electrons a grille et son procede de fabrication
EP0501785A2 (fr) Structure pour émettre des électrons et procédé de fabrication
KR20050071480A (ko) 탄소 나노튜브 평판 디스플레이용 장벽 금속층
US6007695A (en) Selective removal of material using self-initiated galvanic activity in electrolytic bath
EP0876676A2 (fr) Dispositif emetteur de champ et procede de fabrication a voile
WO2002021558A3 (fr) Triode a emission de champ dielectrique a ecartement d'aspiration
US7071603B2 (en) Patterned seed layer suitable for electron-emitting device, and associated fabrication method
US6600264B2 (en) Field emission arrays for fabricating emitter tips and corresponding resistors thereof with a single mask
EP1036403B1 (fr) Protection d'elements emetteurs d'electrons avant d'eliminer un materiau emetteur en exces lors de fabrication d'un dispositif emetteur d'electrons
US6403390B2 (en) Method of fabricating field emission arrays to optimize the size of grid openings and to minimize the occurrence of electrical shorts
KR20000016555A (ko) 게이트 개구부를 한정하기 위해 분사 입자를 이용하는 게이트제어된 전자방출 장치 및 그 제조방법
US7053538B1 (en) Sectioned resistor layer for a carbon nanotube electron-emitting device
US5981304A (en) Self-alignment process usable in microelectronics, and application to creating a focusing grid for micropoint flat screens
JPH03295131A (ja) 電界放出素子およびその製造方法
US5468169A (en) Field emission device employing a sequential emitter electrode formation method
EP0726590A2 (fr) Procédé de fabrication d'une cathode froide à émission de champ