WO1997023909A1 - Circuit integre incorporant une photodiode - Google Patents

Circuit integre incorporant une photodiode Download PDF

Info

Publication number
WO1997023909A1
WO1997023909A1 PCT/JP1996/003749 JP9603749W WO9723909A1 WO 1997023909 A1 WO1997023909 A1 WO 1997023909A1 JP 9603749 W JP9603749 W JP 9603749W WO 9723909 A1 WO9723909 A1 WO 9723909A1
Authority
WO
WIPO (PCT)
Prior art keywords
wiring
light
photodiode
electrode
cross
Prior art date
Application number
PCT/JP1996/003749
Other languages
English (en)
Japanese (ja)
Inventor
Osamu Shiroma
Original Assignee
Sanyo Electric Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP7335063A external-priority patent/JP2000200892A/ja
Priority claimed from JP8170290A external-priority patent/JP2000200893A/ja
Application filed by Sanyo Electric Co., Ltd. filed Critical Sanyo Electric Co., Ltd.
Publication of WO1997023909A1 publication Critical patent/WO1997023909A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors

Definitions

  • an interlayer insulating film for insulating the wiring layers from each other there is a polyimide-based insulating film in addition to a PSG film, a BPSG film and the like.
  • polyimide insulating films there is a strong demand for polyimide insulating films because they have excellent flatness and can be manufactured at low cost by spin-on coating.
  • the polyimide insulating film generates gas due to various heat treatments after coating, and the generated scum pushes up the aluminum electrode covering the surface, so that aluminum over a large area of, for example, 200 mm x 200 mm Cannot be coated with electrodes. Therefore, there is a disadvantage that it cannot be used in the case where almost the entire surface of the chip is covered like the light shielding film 2.
  • FIG. 3 is a cross-sectional view taken along the line A A of FIG.
  • FIG. 8 is a plan view for explaining a conventional photodiode built-in integrated circuit. BEST MODE FOR CARRYING OUT THE INVENTION
  • 11 is a semiconductor chip in which a photodiode element and other peripheral circuit elements are integrated
  • 12 is a light-shielding film formed of aluminum electrode wiring
  • 13 is an electrode node
  • 1 Reference numeral 4 denotes a photodiode section
  • 15 denotes a circuit element section.
  • the light-shielding film 12 covers substantially the entire circuit element section 15 and extends to the vicinity of the outermost scribe line of the semiconductor chip 11, and the photodiode section 4 is opened for light incidence.
  • the electrode pad portion 13 is provided with a bonding pad for external connection by aluminum electrode wiring inside the electrode pad portion 13 so as not to short-circuit the bonding pad and the light shielding film, and To prevent the surface from being exposed, a multilayer wiring structure is used to make the ends overlap each other.
  • FIG. 4 is a cross-sectional view showing the structure of an NPN transistor as a representative of a circuit element and a photodiode element PD formed in the photodiode section 14.
  • 30 is a P-type base region formed on the surface of the island region 23
  • 31 is an N + -type emitter region formed on the surface of the base region 30
  • 32 is a region of the island region 23. This is the N + type collector contact area formed on the surface.
  • the structure of the photodiode PD and the structure of the dummy photodiode are basically exactly the same.
  • the cross connection of the first-layer electrode wiring 17 is performed. Can be. Therefore, wiring pattern design becomes easy. Also, since the number of layers in the multilayer wiring does not need to be increased, the cost can be reduced. By placing a dummy photodiode below the crossed wiring section 16, the incident light passing through the crossed wiring section 16 is collected, and is prevented from flowing to other circuit elements. To prevent.
  • FIG. 5 is a plan view showing an entire semiconductor chip of a photodiode built-in integrated circuit according to a second embodiment of the present invention.
  • reference numeral 41 denotes a semiconductor chip in which a photodiode element and other peripheral circuit elements are integrated
  • 42 denotes a light-shielding film formed by aluminum electrode wiring
  • 43 denotes an electrode
  • Section, 44 is a photodiode section
  • 45 is a circuit element section.
  • the light-shielding film 42 covers the entire circuit element portion 45 and extends to the vicinity of the outermost scribe line of the semiconductor chip 41, and the photodiode portion 44 is opened for light incidence.
  • circuit element section 45 a large number of active elements and passive elements such as NPN transistors and resistors are formed. These individual circuit elements are arranged below the light shielding film 42 by an aluminum wiring layer below the light shielding film 42 (or by a first wiring layer if the light shielding film is the second layer). Electrical connection between each element is made to configure. Then, a part of the light-shielding film 42 is opened with a size of about 3 O jxb 0 ° to form a cross wiring part 46.
  • the cross-sectional structure of the integrated circuit shown in FIG. 5 is basically the same as the structure shown in FIG. That is, referring to FIG.
  • the photodiode 44 includes an island region 23 as a cathode, a substrate 21 and an isolation region 22 as anodes, and an N + type force on the bird region 23 surface.
  • a contact region 25 is formed, a cathode electrode 26 is arranged on the surface of the cathode contact region 25, and an anode electrode 24 is arranged on the surface of the separation region 22.
  • the photodiode PD is reverse biased by applying the ground potential GND to the anode electrode 24 and the power supply potential VCC such as +5 V to the force source electrode 26, and the optical signal enters the generated depletion layer. The photocurrent at the time of this is detected.
  • the electrode wirings 48a, 48b, 48c formed in the first wiring layer are exposed, and the same as the light-shielding film 42, in the second wiring layer.
  • the formed cross electrode 47 is interlayer-connected to the electrode wirings 48 a and 48 c via through holes 50 formed in the interlayer insulating film 28. Then, since the cross electrode 47 is insulated by the electrode wiring 48b and the interlayer insulating film 28, cross wiring between the electrode wirings 48a and 48c and the electrode wiring 48b is performed.
  • Each electrode wiring 48a, 48b, 48c extends on the insulating film and is connected to a desired circuit element.
  • the opening of the cross wiring portion 46 exposes the surface of the interlayer insulating film 28, it can serve as a gas vent hole of the polyimide insulating film as a material.
  • the gas vent hole is used to prevent the aluminum that covers the surface from swelling with the gas due to the gas generated from the polyimide during the heat treatment after the polyimide is formed, for example, during the annealing treatment.
  • a design is made such that one aluminum electrode is provided for every coating over a certain area (for example, 200 / X200). Naturally, it is necessary to protect the internal circuit from light entering through the opening, and it is difficult to arrange circuit elements below it.
  • the opening for degassing and the opening for the cross wiring portion 46 in common, it is not necessary to provide an extra opening.
  • the structure shown in FIG. 7 is used in which the crossing electrodes 47, 48a, 48b, and 48c are removed, or the same structure as the light-shielding film 42 is provided by the first-layer electrode.
  • a film having a function may be formed, and the film may be disposed so as to close the opening of the gas vent hole.
  • the area of the opening 51 can be smaller than that of the intersection 46 because the cross electrode 47 is unnecessary.
  • the device can be manufactured at low cost, and the manufacturing process can be simplified.
  • the opening of the cross wiring part 16 and the opening of the gas vent hole common, the number of gas vent holes can be reduced, and the size of the tube can be reduced.
  • the structures of the photodiode PD and the dummy photodiode are not limited to those in the above embodiment.
  • a P-type anode region is formed by diffusion in the same process as the base region 30 on the surface of the island region 23, and the anode region is formed.
  • a configuration in which the PN junction between the island region 23 and the island region 23 is a photodiode may be used.
  • the same level of the aluminum wiring layer as the light-shielding film 42 is used as the cross electrode 47, so that the first-layer electrode wiring can be performed without increasing the number of wiring layers.
  • Cross connection becomes possible. Therefore, the cost can be reduced, and the degree of freedom in pattern design increases, making it easier.
  • the manufacturing process can be simplified and the cost can be reduced.
  • the integrated circuit with a built-in photodiode is used as a signal reading device used for picking up a storage device using a laser such as a CD, as a device on the light receiving side of a remote control device using infrared rays. I like it.
  • a BIP-type element as an example of a circuit element.
  • the present invention can be applied to, for example, a MOS-type integrated circuit and a mixed-type BIP / MOS-type integrated circuit.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

On peut disposer à la fois d'un film opaque à la lumière et d'un câblage croisé dans un dispositif semi-conducteur qui incorpore une photodiode et dans lequel les éléments de circuit sont recouverts dudit film opaque à la lumière sans qu'il soit nécessaire d'augmenter le nombre de couches du câblage multicouche. On dispose d'un film intermédiaire isolant de polyimide. La surface d'une puce à semi-conducteurs (11), sur laquelle sont formées une partie destinée à la photodiode (14) et une partie destinée aux éléments de circuits (15), est recouverte, excepté en ce qui concerne la partie destinée à la photodiode (14), d'un film opaque à la lumière (12) composé d'une couche de câblage en aluminium. On effectue le câblage croisé entre les câblages d'électrodes de la première couche (17a et 17c) et le câblage des électrodes (17b) au moyen d'une connexion intercouche en formant une partie de câblage croisé (16) au moyen de l'ouverture d'une partie du film (12) sur la partie destinée aux éléments de circuit (15) et une électrode croisée (18) d'une couche de câblage au même niveau que celui du film opaque à la lumière (12). Une photodiode fictive (D-PD) est disposée sous la partie de câblage croisé (16) de façon à absorber toute lumière incidente en excès. L'ouverture de la partie de câblage (46) joue également le rôle d'évent.
PCT/JP1996/003749 1995-12-22 1996-12-20 Circuit integre incorporant une photodiode WO1997023909A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP7/335063 1995-12-22
JP7335063A JP2000200892A (ja) 1995-12-22 1995-12-22 ホトダイオード内蔵半導体装置
JP8/170290 1996-06-28
JP8170290A JP2000200893A (ja) 1996-06-28 1996-06-28 ホトダイオード内蔵集積回路

Publications (1)

Publication Number Publication Date
WO1997023909A1 true WO1997023909A1 (fr) 1997-07-03

Family

ID=26493326

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP1996/003749 WO1997023909A1 (fr) 1995-12-22 1996-12-20 Circuit integre incorporant une photodiode

Country Status (1)

Country Link
WO (1) WO1997023909A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104051480A (zh) * 2013-03-14 2014-09-17 台湾积体电路制造股份有限公司 具有排气孔的光感测器件
US9722099B2 (en) 2013-03-14 2017-08-01 Taiwan Semiconductor Manufacturing Company, Ltd. Light sensing device with outgassing hole in a light shielding layer and an anti-reflection film

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03280567A (ja) * 1990-03-29 1991-12-11 Sony Corp 赤外線センサ
JPH05326907A (ja) * 1992-05-25 1993-12-10 Sanyo Electric Co Ltd 光半導体装置
JPH05326908A (ja) * 1992-05-25 1993-12-10 Sanyo Electric Co Ltd 光半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03280567A (ja) * 1990-03-29 1991-12-11 Sony Corp 赤外線センサ
JPH05326907A (ja) * 1992-05-25 1993-12-10 Sanyo Electric Co Ltd 光半導体装置
JPH05326908A (ja) * 1992-05-25 1993-12-10 Sanyo Electric Co Ltd 光半導体装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104051480A (zh) * 2013-03-14 2014-09-17 台湾积体电路制造股份有限公司 具有排气孔的光感测器件
CN104051480B (zh) * 2013-03-14 2017-04-12 台湾积体电路制造股份有限公司 具有排气孔的光感测器件
US9722099B2 (en) 2013-03-14 2017-08-01 Taiwan Semiconductor Manufacturing Company, Ltd. Light sensing device with outgassing hole in a light shielding layer and an anti-reflection film

Similar Documents

Publication Publication Date Title
US7745857B2 (en) Semiconductor device and its manufacturing method
CN102637705A (zh) 半导体器件制造方法
JP2925943B2 (ja) ホトダイオード内蔵半導体装置
KR100413579B1 (ko) 반도체 장치
WO1997023909A1 (fr) Circuit integre incorporant une photodiode
EP0590598A1 (fr) Photodiode à semi-conducteur comprenant une couche opaque à la lumière
JPH10289994A (ja) 光センサ集積回路装置
JP2000200892A (ja) ホトダイオード内蔵半導体装置
JP3342291B2 (ja) ホトダイオード内蔵集積回路
JP3748946B2 (ja) ホトダイオード内蔵半導体装置
JP3172253B2 (ja) 光半導体装置
US6417560B1 (en) Semiconductor device
EP0337482B1 (fr) Dispositif semi-conducteur de protection
JP2000200893A (ja) ホトダイオード内蔵集積回路
JP2852222B2 (ja) 光半導体集積回路装置
JP2584360B2 (ja) 光半導体装置
JP3157274B2 (ja) 光半導体装置
JPH0360073A (ja) 光半導体装置
JPH09321271A (ja) ホトダイオード内蔵集積回路
JP3138057B2 (ja) 光半導体装置
JPH1065134A (ja) 光半導体集積回路
KR20080061021A (ko) 반도체 소자 및 그 제조방법
JPH03286565A (ja) 光センサ付ｉｃのボンデイングパツド
JPH04298077A (ja) 光半導体装置
JPH1117159A (ja) 半導体装置

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): CN JP KR US

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AT BE CH DE DK ES FI FR GB GR IE IT LU MC NL PT SE

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase