Definitions

• the present invention relates to a monochrome or flat liquid crystal display device widely used as a display of a clock, a calculator, a video camera, and various other electronic devices.
• the first electrode and the second electrode are provided on one of the two substrates for sealing the liquid crystal, and the non-linear resistance layer is formed between the first electrode and the second electrode.
• the present invention relates to a configuration of a liquid crystal display device in which an anodic oxide film of an electrode is formed, and a non-linear resistance element having a “metal-insulator-metal” or “metal-insulator-transparent conductor” structure is provided.
• the decrease of the contrast or the decrease of the response speed occurs as the time division is performed. For this reason, it is difficult to obtain a sufficient contrast when having about 200 scanning lines.
• an active matrix liquid crystal display panel having a switching element in each pixel is adopted.
• the active matrix liquid crystal display panel can be roughly classified into three terminals using thin film transistors (Thin-Film-Transistor: hereinafter referred to as "TFT”) as switching elements.
• TFT thin film transistors
• a diode type, a varistor type, or a thin-film diode (hereinafter referred to as “TFD”) type has been developed as this two-terminal system.
• the T F D type is characterized in that the structure is particularly simple and the manufacturing process is short.
• liquid crystal display panels are required to have high density and high definition, and the area occupied by switching elements must be reduced.
• FIG. 45 is a plan view of a liquid crystal display S showing an example of the structure of a conventional liquid crystal display having switching elements effective for large surface area and low cost
• FIG. Description will be made with reference to FIG. 46, which is a plan view showing in an enlarged manner
• FIG. 47 which is a cross-sectional view taken along the line X-X.
• this liquid crystal display device opposes a first substrate 1 and a second substrate 11 made of a transparent material with a predetermined distance therebetween via a spacer 17. Liquid crystal 16 is sealed between them.
• a lower electrode 2 and a signal electrode 4 are provided as a first electrode on the first substrate 1, and a non-linear resistive layer 3 is provided on the lower electrode 2. Further, an upper electrode 6 is provided as a second electrode so as to overlap on the non-linear resistance layer 3 to constitute a non-wire resistive element 9.
• the upper electrode 6 as the second electrode extends from the display electrode 7 as shown in FIG. 46, and a part thereof also serves as the display electrode.
• the non-linear resistive element 9 and the display electrode 7 are provided in a matrix.
• a black matrix 12 is provided in the whole area shown by hatching in FIG. That is, the black matrix 12 is provided as a light shield in the non-display area.
• the counter electrode 13 is made to face the display electrode 7 and the interlayer insulating film 14 is kept in contact with the black matrix 12 so as not to short. It is provided in the form of a band via
• lower electrode 2 and signal electrode 4 which are the first electrodes on first substrate 1 and upper electrode 6 and the display electrode 7 which are the second electrodes are all shown by broken lines.
• the non-linear resistance layer 3 is not shown, and the black matrix 12 and the counter electrode 13 on the lower surface of the second substrate 11 are shown by solid lines.
• the lower electrode 2 provided on the first substrate 1 projects from the signal electrode 4 in order to provide the non-linear resistance element 9, and the lower electrode 2 as this overhanging area overlaps the upper electrode 6.
• the non-linear resistance element 9 is configured.
• the signal electrode 4 as the first electrode and the display electrode 7 as the second electrode have a gap d of a predetermined dimension as shown in FIG.
• the display electrode 7 becomes a pixel portion of the liquid crystal display panel by being disposed so as to overlap with the counter electrode 1 3 via the liquid crystal 16.
• the black matrix 12 is provided so as to overlap by a certain amount up to the formation region of the display electrode 7, and has a role of preventing light leakage from the peripheral region of the display electrode 7.
• the liquid crystal display device performs a predetermined image display due to the change in transmittance of the liquid crystal 16 in the region where the black matrix 12 is not formed on the display electrode 7.
• alignment films 15 and 15 are provided as processing layers for regularly arranging the molecules of the liquid crystal 16. There is.
• an M-row signal electrode 4 is provided on the first substrate 1, and an N-row counter electrode 13 or a second electrode 11 is provided on the second substrate 11.
• a liquid crystal display device having a display area 18 shown by a dot-and-dash line consisting of a matrix of M columns and N rows is provided by providing a data electrode.
• a display electrode 7 is provided at the intersection of the M signal electrodes 4 and the N row counter electrodes 13 or the data electrodes, and a non-linear resistance element (this example is shown between the signal electrodes 4 and the display electrodes 7).
• TFD 9 is provided.
• an anodic oxidation electrode 5 for interconnecting the signal electrodes 4 in M rows is provided, and the anodic oxidation electrode 5 and the anodic oxidation electrode 5 are provided.
• connection electrodes 8 are provided for connecting each signal electrode 4 to an external circuit.
• the signal electrodes 4 of each column are connected by the anodic oxidation electrodes 5, and each lower electrode 2 connected to the signal electrodes is subjected to the positive oxidation treatment at one time, and the non-linear resistance is applied to the surface thereof.
• Layer 3 ( Figure 47) is formed, but after processing the signal electrodes 4 of each column must be separated and made independent.
• the characteristics of the non-linear resistance element 9 may be degraded by static electricity. Also, when the first substrate 1 is cut, each signal is cut off. Since the end faces of the electrodes are exposed, there is a possibility that a short circuit may occur between a plurality of signal electrodes due to the adsorption of dust and moisture.
• the characteristics of the non-linear resistance element 9 may be degraded or broken.
• Anodizing electrode 5 is separated during alignment processing for aligning liquid crystal regularly, during transportation between devices, and during inspection process, which is processing for processing substrate 1 having non-linear resistance element 9 for liquid crystal display. If you do, you can not disperse the static electricity that is generated locally.
• the voltage can be applied to the respective display electrodes 7 simply by applying the voltage to the mutually connected anodic oxidation angle electrodes 5 in the inspection step of the liquid crystal display device, the inspection can be performed easily. it can.
• the external circuit is mounted on the substrate 1 forming the non-linear resistance element 9, for example, a chip on which an integrated circuit capable of high density mounting is mounted on the substrate using a conductive adhesive.
• a conductive adhesive In the case of the glass (COG) mounting method, it is required that contamination does not enter between the mounting electrode and the conductive paste before mounting.
• the material is wasted. It was not possible to meet the various demands mentioned above.
• the present invention provides a liquid crystal display device in which a part of the anodic oxidation electrode is easily removed by etching after various processes as described above are completed, and each signal electrode becomes independent. Deterioration and destruction of the non-linear resistive element due to static electricity generated during the manufacturing process of the non-linear resistive element or the subsequent process to become a liquid crystal display device is prevented, defects of the non-linear resistive element are reduced, and characteristics of the non-linear resistive element
• the first objective is to stabilize the
• the waste disposal part like the cutting part shown in Figure 46 is Another purpose is to make effective use of the remaining portion after making each signal electrode of the anodizing electrode used for anodizing treatment become independent, and also to use the conventional non-linear resistive element described above.
• the signal electrode is formed of a gold coating, and the wiring widths of the initial signal electrode and the final signal electrode are the same. Therefore, there is a problem that it is difficult to make correction when etching defects occur in part of the signal electrodes.
• the anodic oxidation film can not be formed if the signal electrode is broken. Furthermore, in order to form a positive oxide film uniformly, it is necessary to form an anodic oxidation electrode as wide as possible.
• the gate electrode when the gate electrode is used as an anodic oxidation electrode and the anodic oxide film of the gate electrode is used as a gate insulating film, as in the case of the TFD element. There is a risk that an anodic oxidation electrode disconnection or an electrical short between the signal electrode (gate electrode or source electrode) and the transparent display electrode may occur.
• the present invention uses the signal electrode as a part of the electrode for anodic oxidation to enable the anodic oxide film to be formed as the non-linear resistance layer of each non-linear resistance element to be formed reliably and uniformly. If etching defects occur in part of the signal electrodes so that they can be easily corrected, and if an electrical short circuit occurs between the display electrodes of the transparent conductive film and the signal electrodes or anode electrodes for anodic oxidation. It also aims to make it easy to detect the short circuit point. Disclosure of the invention
• the present invention configures a liquid crystal display as follows.
• a first substrate and a second substrate are opposed with a predetermined distance, a plurality of electrodes are provided on the first substrate, and the plurality of electrodes overlap.
• a non-linear resistance layer is formed of the anodic oxide film of one of the electrodes, and a non-linear resistance element such as a TFD element or a TFT element is provided.
• the liquid crystal is sealed between the first substrate and the second substrate.
• an anodic oxidation electrode for mutually connecting in advance each electrode forming an anodic oxide film to form the above-mentioned nonlinear resistance layer so that anodic oxidation treatment can be performed quickly and uniformly, and an anodic oxidation electrode thereof By separately exposing the exposed portion of the anodizing electrode by etching using the other electrode as a mask after the anodic oxidation treatment.
• a special coating for masking can be omitted or reduced, and an etching process for independent of each electrode can be easily performed at any step after the anodizing process.
• the remaining portion of the anodic oxidation electrode can be effectively used as a connection electrode, an input electrode (terminal) and the like.
• anodic oxidation electrode around the display area or the display element portion, it can be used as a light shielding portion, and there is no liquid crystal display device without black matrix. You can also give up.
• the width of the anodic oxidation electrode wide at the beginning, the uniformity of the anodic oxidation film can be improved and the effect of preventing cutting etc. can be enhanced, and the anodic oxidation film can be partially formed on the electrode. Even if a defect occurs, it can be repaired using the wide part of the anodizing electrode.
• FIG. 1 is a plan view showing a part of a liquid crystal display device according to a first embodiment of the present invention
• FIG. 2 is a cross-sectional view taken along the line A-A of FIG.
• FIG. 3 is a plan view showing a part of the liquid crystal display device according to the second embodiment of the present invention.
• Fig. 4 is a cross-sectional view taken along the line B-B of Fig. 3;
• FIG. 5 is a plan view showing a state in which a plurality of substrates of the liquid crystal display device g according to the third embodiment of the present invention are arranged on a large substrate.
• FIG. 6 is an enlarged plan view showing the boundary between two liquid crystal display substrates, which is surrounded by a broken line in FIG.
• FIG. 7 is a cross-sectional view taken along the line C--C of FIG. 6 in a state where the liquid crystal display device is configured
• FIG. 8 is a cross-sectional view taken along the line D-D.
• FIG. 9 is a plan view showing a part of the first substrate side of a liquid crystal display device g according to a fourth embodiment of the present invention
• FIG. 10 is a view showing the liquid crystal display device shown in FIG. -It is a sectional view taken along the line E.
• FIG. 11 is a plan view showing the whole construction of a liquid crystal display according to a fifth embodiment of the present invention
• FIG. 12 is a plan view showing a portion surrounded by broken lines a and b in FIG. It is.
• FIG. 13 is a cross-sectional view taken along line F-F of FIG. 12 with the liquid crystal display S configured
• FIG. 14 is a cross-sectional view taken along line G-G of FIG.
• FIG. 15 is an enlarged plan view showing a part of a liquid crystal display according to a sixth embodiment of the present invention
• FIG. 16 is a cross-sectional view taken along the line HH of FIG.
• FIG. 17 is an enlarged plan view showing a part of a liquid crystal display according to a seventh embodiment of the present invention
• FIG. 18 is a cross-sectional view taken along line I-I in FIG.
• FIG. 19 is a plan view showing an entire configuration of a liquid crystal display according to an eighth embodiment of the present invention
• FIG. 20 is a plan view showing a part of FIG. 19 in an enlarged manner
• FIG. 0 is a cross-sectional view taken along the line JJ of FIG.
• FIG. 22 is a plan view showing a part of the liquid crystal display according to a ninth embodiment of the present invention in an enlarged manner
• FIG. 23 is a cross sectional view taken along the line K--K of FIG.
• FIG. 24 is a plan view showing a partial region of the first substrate forming the TFD element of the liquid crystal display according to the tenth embodiment of the present invention, and FIG. 24 is a cross-sectional view taken along the line L-L in FIG.
• 26 to 29 are a plan view of a liquid crystal display device according to a tenth embodiment of the present invention and sectional views showing a method of manufacturing the negative substrate in order of steps.
• FIG. 30 is a plan view showing a partial region of the first substrate forming the TFD element of the liquid crystal display device according to the first embodiment of the present invention
• FIG. 3.1 is a diagram showing M of FIG. -A cross-sectional view along the M line.
• FIG. 32 to 34 are sectional views showing a method of manufacturing the active substrate of the liquid crystal display device according to the first embodiment of the present invention in the order of steps.
• FIG. 35 is a plan view showing a partial region of a first substrate forming the TFD element of the liquid crystal display device according to the twelfth embodiment of the present invention
• FIG. 36 is an N-- FIG. It is sectional drawing which follows N line.
• FIG. 37 is a plan view showing a partial region of the first substrate forming the TFD element of the liquid crystal display device according to the thirteenth embodiment of the present invention
• FIG. 38 is a plan view of FIG. It is a sectional view which meets P line.
• FIG. 39 is a plan view showing a partial region of the first substrate forming the TFT element of the liquid crystal display device according to the fourteenth embodiment of the present invention
• FIG. 40 is a plan view of FIG. -It is a cross-sectional view along the Q line.
• FIGS. 41 to 44 are sectional views showing a method of manufacturing an active substrate of a liquid crystal display according to a fourteenth embodiment of the present invention in the order of steps.
• FIG. 45 is a whole plan view showing an example of a conventional liquid crystal display device
• FIG. 46 is a plan view showing a part of the liquid crystal display device in an enlarged manner
• FIG. It is sectional drawing in alignment with a line.
• FIGS. 1 to 44 used in the description of each of the following embodiments, the corresponding parts in FIGS. 45 to 47 described above and in the drawings of each embodiment respectively correspond.
• FIG. 1 the structure of a liquid crystal display device according to a first embodiment of the present invention will be described with reference to FIGS. 1 and 2.
• FIG. 1 the structure of a liquid crystal display device according to a first embodiment of the present invention will be described with reference to FIGS. 1 and 2.
• FIG. 1 the structure of a liquid crystal display device according to a first embodiment of the present invention will be described with reference to FIGS. 1 and 2.
• FIG. 1 the structure of a liquid crystal display device according to a first embodiment of the present invention will be described with reference to FIGS. 1 and 2.
• FIG. 1 is a plan view showing a part of the liquid crystal display device of the first embodiment
• FIG. 2 is a cross-sectional view taken along the line A--A of FIG. In FIG. 1, the first and second substrates themselves are not shown.
• this liquid crystal display device is the same as that of the prior art described above, and as shown in FIG. 2, the first substrate 1 and the second substrate 11 made of materials such as transparent glass are respectively
• the liquid crystal 16 is enclosed between the electrodes with a predetermined distance therebetween via a spacer (not shown).
• a lower electrode 2 made of a tantalum (T a) film, a signal electrode 4 and an electrode for anodic oxidation 5 are provided as a first electrode.
• a non-linear resistance layer 3 made of a tantalum oxide (Ta 2 0 5 5) film which is a positive electrode oxide film of the lower electrode 2 itself is formed.
• the anodic oxide film is formed not only on the lower electrode 2 but also on the entire surface of the first electrode, ie, the surfaces of the signal electrode 4 and the anodic oxidation electrode 5.
• the second electrode As the second electrode, the upper electrode 6 on the non-linear resistance layer 3, the display electrode 7 connected to the upper electrode 6, and the connection electrode 8 forming a part of the anodic oxidation electrode 5 And indium tin oxide (ITO) film.
• ITO indium tin oxide
• the lower electrode 2, the non-linear resistive layer 3 and the upper electrode 6 constitute a non-linear resistive element 9 of a TFD structure.
• connection electrode 8 consisting of the second electrode covers a part of the anodizing electrode 5 consisting of the first electrode, and at the time of anodizing treatment, as shown by phantom lines in FIG.
• the runners 5 a of the anodic oxidation electrodes 5 connecting the electrodes 4 are separated from each other at the separation side 10 by the connection electrodes 8 after the anodic oxidation treatment, and the signal electrodes 4 independent of each other are formed.
• connection electrode 8 is an electrode connected to the output terminal 1 0 0 0 a of the driving IC 1 0 0 for driving the liquid crystal display device as shown in FIG.
• a black matrix 1 2 made of a chromium (Cr) film is provided on the inner surface of the ing.
• the black matrix 12 is not provided in the area of the second substrate 11 facing the display electrode 7 on the first substrate 1 o
• an opposite electrode 1 3 made of a zinc oxide oxide film is provided to face the display electrode 7.
• the counter electrode 13 is provided via the interlayer insulating film 14 so as not to short circuit in contact with the black matrix 12.
• the first electrode (signal electrode 4) and the display electrode 7 have a gap of a predetermined size so as not to short-circuit both.
• the display electrode 7 becomes a display pixel portion of the liquid crystal display panel by being disposed so as to overlap the counter electrode 13 via the liquid crystal 16 as shown in FIG.
• the black matrix 1 2 is provided with an opening 1 2 a.
• the shaded region shown in FIG. 1 is the area where the black matrix 1 2 is formed.
• the liquid crystal display device performs predetermined image display by the change in the transmittance of the liquid crystal 16 in the display pixel portion described above.
• first substrate 1 and the second substrate 11 are provided with alignment films 15 and 15 as treatment layers for regularly arranging the molecules of the liquid crystal 16.
• the anodizing electrode 5 formed of the first electrode is separated in a self-aligned manner by the connection electrode 8 formed of the second electrode.
• the signal electrodes 4 of each row are formed by the anodic oxidation electrodes 5. 2 are connected to each other. Then, after inspection of, for example, a liquid crystal display panel after anodizing treatment, etching is performed using the connection electrode 8 consisting of the second electrode as a mask, whereby a runner not covered by the connection electrode 8 of the anodizing electrode 5 The part 5 a is removed and separated from each other at the separation side 10 of the connection electrode 8 to constitute independent signal electrodes 4 of each row.
• connection electrode 8 which is the second electrode is used as a mask for etching, the respective signal electrodes connected to each other during the manufacturing process of the liquid crystal display panel, the inspection process, or after the inspection. It becomes possible to process 4 into independent signal electrodes.
• FIG. 3 is a plan view showing a part of the liquid crystal display device of the second embodiment
• FIG. 4 is a cross-sectional view taken along the line B--B of FIG. In FIG. 3, the first and second substrates themselves are not shown.
• the lower electrode 2, the signal electrode 4 and the anodic oxidation electrode 5 are provided on the first substrate 1 as a first electrode made of a tantalum (Ta) film. Then, on the surface of the first electrode including the lower electrode 2, tantalum oxide is used as an enteric oxide film of the first electrode itself. A non-linear resistance layer 3 composed of a (T a2 O5) film is formed.
• an upper electrode 6 made of a chromium (Cr) film is provided on the non-linear resistive layer 3 and a first connection electrode 2 which forms a part of an anodic oxidation electrode. 2 is provided with the same chrome.
• the lower electrode 2, the non-linear resistive layer 3 and the upper electrode 6 constitute a non-linear resistive element 9 having a structure of TFD.
• a second connection electrode 8 which forms a part of the display electrode 7 and the positive oxidation electrode 5 (a connection electrode of the first embodiment) And an indium tin oxide (ITO) film are provided.
• the upper electrode 6 is electrically connected to the display electrode 7 by a connection 7 a which is a part of the display electrode 7.
• first connection electrode 22 composed of the second electrode and the second connection electrode 8 composed of the third electrode cover a part of the anodic oxidation electrode 5 composed of the first electrode.
• the anodic oxidation electrode 5 is separated by the separation side 10 of the second connection electrode 8 to form independent connection terminals 23 2, 23 4, 25,...
• connection terminals 2 3, 2 4, 2 5,... are electrically connected to the signal electrodes 4 of each row through the anodic oxidation electrodes 5 separated from each other.
• the target display can be made on each display electrode 7.
• connection terminals 2 3, 2 4, 2 5,... With the external circuit using the chip on glass (C OG) method. They are disposed close to each other on the terminal formation portion 1 a of the substrate 1.
• C OG chip on glass
• an anisotropic conductive seal agent or conductive particles are formed in a convex shape on a semiconductor integrated circuit (IC), and an adhesive in the anisotropic conductive seal agent is used to form a semiconductor. It is a method of mounting an integrated circuit on a substrate. Also according to the second embodiment, when anodizing to form a non-linear resistance layer on the lower electrode 2 is performed, the signal electrodes 4 of each row are mutually connected by the anodizing electrodes 5. ing.
• etching is performed using the second connection electrode 8 consisting of the second electrode as a mask to obtain the second connection electrode 8 of the anodizing electrode 5.
• Each runner portion 5a (shown by an imaginary line in FIG. 3) which is not shown in FIG. 3 is removed and separated from each other at each separation side 10 around the second connection electrode 8.
• the independent connection terminals 2 3, 2 4, 2 5,... which respectively conduct the electrodes 4 are formed.
• the respective signal electrodes 4 are mutually connected by the anodizing electrode 5 in the case of anodizing treatment, and then required. After completion of the process, each signal electrode can be made independent by a simple etching process.
• anodic oxidation electrode 5 consisting of a first electrode
• a first connection electrode 22 consisting of a second electrode
• a second connection electrode 8 consisting of a third electrode are sequentially formed. Therefore, the adhesion between the anodic oxidation electrode 5 and the second connection electrode 8 can be enhanced.
• FIG. 5 a liquid crystal display device according to a third embodiment of the present invention will be described based on FIGS. 5 to 8.
• FIG. 5 a liquid crystal display device according to a third embodiment of the present invention
• FIG. 5 is a plan view showing a state in which a plurality of substrates of the liquid crystal display device according to the third embodiment are arranged on a large substrate.
• FIG. 6 is an enlarged view of a boundary between two liquid crystal display substrates, which is enclosed by a broken line in FIG. 5 is a plan view.
• FIG. 7 is a cross-sectional view taken along a line C--C in FIG. 6, and
• FIG. 8 is a cross-sectional view taken along a line D-D in the same.
• liquid crystal display substrates 3 1, 3 2,... are provided on a large first substrate 30.
• the liquid crystal display substrates 3 1 and 32 are configured to be separated by separation lines 3 3 and 34.
• the liquid crystal display substrate 3 1 or 3 2 (corresponding to the first substrate 1 in the above-mentioned embodiments) has a first electrode made of a tantalum (T a) film. As shown in FIGS. 6 and 8, a lower electrode 2, a signal electrode 4 and an anodizing electrode 4 1 are provided.
• the anodic oxidation electrode 41 is provided on the liquid crystal display substrate 32 side as shown in FIG. 6, and the respective signal electrodes 4 of the adjacent liquid crystal display substrate 31 are connected to each other, and the anodic oxidation is performed. Sometimes it has a structure that applies a voltage from the signal pole 4 to each lower electrode 2.
• the lower electrode 2 is provided with a non-linear resistance layer 3 formed of a tantalum oxide (T a 205) film which is an anodic oxide film formed by anodizing the lower electrode 2 itself.
• a tantalum oxide (T a 205) film which is an anodic oxide film formed by anodizing the lower electrode 2 itself.
• ITO indium tin oxide
• the lower electrode 2, the non-linear resistive layer 3 and the upper electrode 6 constitute a non-linear resistive element 9 of a TFD structure.
• the input electrode 8 'consisting of the second electrode covers a part of the anodizing electrode 4 1 consisting of the first electrode of the adjacent substrate 32 for liquid crystal display devices.
• the anodic oxidation electrode 41 is separated at the same side as the input electrode 8 'by the etching treatment, and the portion shown by a phantom line in FIG. 6 is removed. Therefore, adjacent 6 Form the independent input terminals 3 8, 3 9 and 40 in the liquid crystal display substrate 32 together with the connection terminals 2 3, 2 4, 2 5 and 2 6 for the dry IC.
• liquid crystal display device 60 is a seal for sealing the liquid crystal 16 between the liquid crystal display substrate 3 1 or 3 2 and the second substrate 1 1, and the internal configuration of the liquid crystal display device is as follows: This is the same as the first embodiment described above.
• the respective signal electrodes 4 are mutually exposed by the anodizing electrodes 4 1 in the anodizing treatment.
• the etching process is performed using the input electrode 8 'consisting of the second electrode as a mask to form the positive oxidation electrode 4 1 and thus, independent signal electrodes 4 can be obtained.
• each signal electrode 4 is connected and separated by using an anodizing electrode 41 formed of the first electrode of the adjacent liquid crystal display device and an input electrode 8 ′ formed of the second electrode. Therefore, a large substrate can be used effectively because it does not require a large space for removing the anodizing electrode.
• the portion left after separation of the anodic oxidation electrode 41 or 5 can be effectively used as an input terminal or a connection terminal of the adjacent liquid crystal display device.
• FIG. 9 a liquid crystal display according to a fourth embodiment of the present invention will be described based on FIGS. 9 and 10.
• FIG. 9 is a plan view showing a part of the first substrate side of the liquid crystal display device according to the fourth embodiment
• FIG. 10 is a diagram showing the liquid crystal display device.
• FIG. 10 is a cross-sectional view taken along the line E-E in FIG.
• a second anodic oxidation electrode 5 6 is provided.
• the non-linear resistance layer 3 made of this anodic oxide film is also formed on the surface of the signal electrode which is the same first electrode as the lower electrode 2 and on the surfaces of the first anodic oxidation electrode 5 5 and the second anodic oxidation electrode 56. It is formed.
• the upper electrode 6 provided on the non-linear resistance layer 3 and the display electrode 7 connected to the upper electrode 6 are provided by an indium oxide (ITO) film, and also by the tantalum oxide.
• ITO indium oxide
• each signal electrode 50 extending on the first substrate 1 outside the seal 60 and each of them mutually cover a part of the first anodic oxidation electrode 55
• a surrounding electrode 5 8 is provided so as to cover each connection electrode 8 and most of the second anodic oxidation electrode 56.
• the second electrode for anodic oxidation 56 and the surrounding electrode 58 are disposed so as to surround the vicinity of the connection electrodes 51, 52, 53 and 54, and are further adjacent to the display electrode 7 near the seal 60. Connected to the surrounding electrode 5 7.
• the lower electrode 2, the non-linear resistive layer 3 and the upper electrode 6 described above constitute a non-linear resistive element 9 of a T FD structure.
• the ion component of the alignment film 15 or the liquid crystal 16 in which liquid crystals are regularly arranged may be influenced, and the characteristic change or deterioration of the non-linear resistive element 9 may occur.
• a transparent insulating film 48 is provided on the non-linear resistance element 9 and its periphery.
• This insulating film 48 has an opening 4 at the top of the first anodic oxidation electrode 5 5 connecting the connection electrodes 5 1 to 5 4 of each signal electrode 50 and the second anodic oxidation electrode 5 6. 9 is provided. 8 And, in the state of becoming a liquid crystal display device, the portion shown by a phantom line in FIG. 9 of the first anodic oxidation electrode 55 which is exposed to the opening of the insulating film 48 is removed. . Therefore, the connection electrodes 51 to 54 and the surrounding electrode 58 constitute electrically isolated separate electrodes.
• the characteristic change or the characteristic deterioration of the non-linear resistance element 9 is prevented.
• the anodizing electrode 55 consisting of the first electrode is formed on a part of the side which is the second electrode.
• connection electrodes 51 to 54 are external lines such as dry IC 10 0 shown by phantom lines in FIG. 10. It constitutes an independent electrode terminal connected to the circuit.
• each signal electrode 50 is connected to each other by the first and second anodizing electrodes 55 and 56. Therefore, the embodiments described above are performed. The same effect is obtained.
• the second anodic oxidation electrode 56 is disposed in the vicinity of the connection electrodes 51 to 54, and is connected to the second anodic oxidation electrode 55 via the branch portion of the first anodic oxidation electrode 55.
• the first anodic oxidation electrode 5 5 (shown by a phantom line in FIG. 9) in the opening 49 is removed.
• the processing for making each signal electrode 50 independent can be performed simultaneously, so that the number of manufacturing processes does not increase.
• the opening 49 is formed in the insulating film 48, the second substrate 11 and the seal 60 are assembled.
• a tantalum film containing nitrogen may be used other than an ordinary tantalum film.
• a tantalum film containing tin or a tantalum film containing niobium can also be used as the first electrode.
• a multilayer film of a low resistance material such as aluminum, copper or nickel and a film containing tantalum or an impurity in tantalum may be used.
• the tantalum film is used as the first electrode 2 and the oxidized tantalum film is formed as the non-linear resistance layer has been described.
• a silicon oxide film, a silicon nitride film, or a silicon oxide film containing impurities is provided on the tantalum oxide film, and a tantalum oxide film and a multilayer film of these films are formed. You may use a non-linear resistive layer.
• the film formed on the tantalum oxide film of the non-linear resistance layer consisting of a multilayer film may be formed using plasma chemical vapor deposition (CVD).
• CVD plasma chemical vapor deposition
• a voltage is applied to the tantalum oxide film, and the breakdown voltage is improved, so that it is possible to prevent the deterioration of the non-linear resistance element.
• control of current-voltage characteristics of the non-linear resistance element becomes possible. Therefore, it is possible to suppress the flow of overcurrent to the non-linear resistance element, and to improve the characteristics of the liquid crystal display device.
• FIG. 11 is a plan view showing the whole constitution of the liquid crystal display device according to the fifth embodiment, and for the sake of easy understanding, the constitutions of both the first and second substrates which are superimposed one on the other are used. It is indicated by a solid line.
• FIG. 12 is an enlarged plan view showing a portion surrounded by broken lines a and b in FIG. The upper substrate and the film formed thereon are shown removed. And, a portion surrounded by a broken line a is shown on the upper side, and a portion surrounded by a broken line b is shown on the lower side.
• FIG. 13 is a cross-sectional view taken along the line F-F of FIG. 12 with the liquid crystal display configured
• FIG. 14 is a cross-sectional view taken along the line G-G of FIG.
• the basic configuration of the liquid crystal display device according to this embodiment is the same as that of each of the above-described embodiments.
• a lower electrode 2 On the first substrate 1, a lower electrode 2, a signal S pole 4 and an electrode for anodic oxidation 5 are provided as a first electrode made of a tantalum (T a) film.
• T a tantalum
• a non-linear resistance layer 3 made of a tantalum oxide (T a 2 0 5) film is formed as an anodic oxide film of the electrode 1.
• the anodic oxidation electrode 5 is formed in a band shape so as to surround the periphery of the display area 18 as indicated by hatching in FIG. Then, in order to form the plurality of first substrates 1 from the large original substrate, in order to connect the anodic oxidation electrodes 5 to each other, the interconnection electrodes 65 are formed of the first substrate 1. It is provided at the end.
• the anodic oxidation electrode 5 consisting of the first electrode is, as shown in FIGS. 1 1 and 12, a matrix shape consisting of the signal electrodes 4 in M rows and the counter electrodes 13 in N rows.
• the plurality of signal electrodes 4, 4,... are connected to each other around the display area 18.
• the upper electrode 6 on the non-linear resistance layer 3 and the display electrode 7 connected to the upper electrode 6 are provided by an indium tin oxide (ITO) film.
• ITO indium tin oxide
• the lower electrode 2, the non-linear resistive layer 3 and the upper electrode 6 constitute a non-linear resistive element 9 of a TFD structure.
• FIG. 12 a hatched periphery is shown on the anodic oxidation electrode 5 provided so as to surround the display regions 18 in which a large number of display electrodes 7 are arranged in a matrix.
• indium oxide it is also possible to use indium oxide as the second electrode. It is made of tin (ITO) film.
• the electrodes for anodic oxidation 5 are all formed on the lower side of each electrode shown by I: and so on in FIG. 12, and all the signal electrodes 4 have both ends at the time of anodizing treatment.
• the electrodes are securely connected to each other by the anodic oxidation electrodes 5.
• the peripheral electrodes 57 and 58 including the second electrodes, the connection electrodes 71 to 74, and the light shielding portion electrode 75 are parts of the electrode 5 for anodic oxidation.
• a mask for the mask another mask is also applied to the surface of width shown by D in FIG. 12 of the display area 18 and the etching process is carried out. The exposed portion of the mask is removed. As a result, each signal electrode 4 and each connection electrode 71 to 74 connected thereto are separated from each other to constitute an independent electrode.
• FIGS. 13 and 14 the removed portions of the anodic oxidation electrode 5 and the non-linear resistance layer 3 are indicated by phantom lines.
• the respective signal electrodes 4 are connected to each other by the anodic oxidation electrode 5 at the time of the positive oxidation treatment for forming the non-linear resistance layer 3 and the subsequent inspection steps, etc.
• the same effect as the above-mentioned embodiments can be obtained.
• the connection is made at the end of the signal electrode 4, it is more reliable, and even if a break occurs in the middle of the signal electrode, the anodic oxidation treatment can be performed reliably.
• etching is performed using the second electrode as a mask to easily separate each signal electrode 4 and the connection electrodes 7:! can do.
• the sides on both sides of the peripheral electrode 57, the left and right sides in FIG. 12 of each of the connection electrodes 71 to 74, and the sides around the light shielding portion electrode 75 become the separation sides.
• the opaque anodic oxidation electrode 5 remains on the outer peripheral portion of the display area 18 to form a light shielding part, and the display area 18 can be cut off.
• the anodizing electrode 5 as a light shielding portion, even in the liquid crystal display device without the black matrix 12, a parting (a frame surrounding the periphery of the display area) can be made.
• the width of the anodic oxidation electrode can be widened by the anodic oxidation electrode 5 used for the parting, and the uniformity of the anodic oxidation film is improved.
• an element having a TFD structure is used as a non-linear resistance element, and a structure in which two TFD elements are connected in series in each pixel portion is used. The case where it is provided will be explained.
• FIG. 15 is a plan view showing a part of the liquid crystal display in an enlarged manner
• FIG. 6 is a cross-sectional view taken along the line HH of FIG.
• an island-like lower electrode 2, a first data electrode 8 2 and an anodic oxidation are formed on a first substrate 1 as a first electrode made of a tantalum (Ta) film.
• An electrode 5 and a wire connection portion 7 6 connecting the island-shaped lower electrode 2 and the first data electrode m 82 are provided, and on this first electrode, an anodic oxide film of the first electrode and Then, a non-linear resistance layer 3 made of a tantalum oxide (Ta 2 O 5) film is formed.
• the anodic oxidation electrode 5 consisting of the first electrode is formed of a plurality of data electrodes 8 1 around the matrix-like display area consisting of the signal electrodes of M rows and the data electrodes 8 1 and 8 1 of N columns. , 8 1 has a configuration to connect with each other.
• the upper electrode 8 4 for data electrode connected to the second data electrode 8 3 and the display electrode 7 an upper electrode 85 for display electrode to be connected, and a second data electrode 83 on the display electrode 7 and the first data electrode 82 are provided with an oxide tin (ITO) film.
• ITO oxide tin
• the island-shaped lower electrode 2, the non-linear resistive layer 3, and the upper electrode 8 4 for the data electrode constitute a first non-linear resistive element 86 of the TFD structure. Furthermore, a second non-linear resistive element 8 7 of T FD structure is configured by the island-shaped lower electrode 2, the non-linear resistive layer 3, and the upper electrode 8 5 for the display electrode.
• the second data electrode 83 is connected to the data electrode upper electrode 84, the nonlinear resistive layer 3, the lower electrode 2, the nonlinear resistive layer 3, the display electrode upper electrode 85, and the display electrode 7 in this order.
• the data electrode 8 3 and the display electrode 7 have a symmetrical TFD configuration.
• an insulating film 48 made of oxidized tantalum (Ta 2 O 5) is provided on the first substrate 1 as shown in FIG.
• the insulating film 48 has a wiring connection portion separation opening 9 1 around the wiring connection portion 76 connecting the first signal electrode 4 and the island-like lower electrode 2.
• a plurality of separation openings 92 are provided on the anodic oxidation electrode 5.
• connection opening 93 for connecting the external circuit and the second data electrode 83.
• the insulating film 4 8 and the first electrode are provided in the wire connection portion separating opening 9 1 provided on the wire connection portion 7 6 connecting the first data electrode 8 2 and the island-like lower electrode 2, the insulating film 4 8 and the first electrode are provided.
• the lower electrode 2 has the same separation side.
• the insulating film 4 8 and the anodic oxidation electrode 5 have the same separation side 10.
• light shielding portions 7 6 are provided in which the anodic oxidation electrodes 5 are separated by the same separation side as the insulating film 4 8.
• the outer periphery of the display area is closed off by the light shielding part 7 6.
• the red filter 95, the blue filter 9 6 are provided so that the liquid crystal display device can display a color.
• a green filter not shown is provided.
• an area 9 7 in which color filters are superposed is provided.
• a counter electrode 13 made of an indium tin oxide film is provided to face the display electrode 7.
• the display electrode 7 becomes a display pixel portion of the liquid crystal display panel by arranging the display electrode 7 so as to overlap with the counter electrode 13 via the liquid crystal 16.
• the display pixel portion has a monochromatic color filter, for example, a red filter 9 3.
• the liquid crystal The display device performs predetermined image display.
• alignment films 15 and 15 are provided on the first substrate 1 and the second substrate 11 respectively as treatment layers for regularly arranging the molecules of the liquid crystal 16.
• the anodizing electrode 5 formed of the first electrode is separated in a self-aligned manner by the opening of the insulating film 48 in the periphery of the display area 1 It has 0.
• the anodic oxidation electrode 5 or the first data electrode 82 is formed into an island shape. It is necessary to separate the lower electrode 2 of the
• the light shielding portion 7 6 can be provided around the display region using the anodizing electrode 5 without delaying the step. Therefore, when using a color finisher in place of the black matrix instead of the black matrix, even if the light shielding property of the part is insufficient, the anodizing electrode 5 remains shaded. By using Section 7 6, it is possible to close the light shielding sufficiently.
• a voltage can be supplied from the periphery during the anodic oxidation process for forming the non-linear resistance layer 3.
• some of the anodic oxidation electrodes 5 have defects. Even if it occurs, voltage can be supplied from other parts.
• a T F T structure element is used as the non-linear resistance element.
• FIG. 17 is a plan view showing an enlarged part of the liquid crystal display device.
• FIG. 18 is a cross-sectional view taken along the line I-I.
• a gate electrode 101 corresponding to the signal electrode 4 and an electrode for anodic oxidation are used as a first electrode made of a tantalum (Ta) film.
• a gate insulating film 102 made of a tantalum oxide (T a 2 O 5) film is provided on the first electrode as an anodic oxide film of the first electrode.
• the anodizing electrode 5 consisting of the first electrode is, as shown in FIG. 17, a matrix-like display consisting of gate electrodes 10 1 in M rows and source electrodes 10 5 in N columns. A plurality of gate electrodes 1 0 1 and 1 0 1 are mutually connected around the area.
• the anodic oxidation electrode 5 is also provided under the peripheral electrode 57 and the light shielding portion electrode 75 shown by hatching in FIG.
• An amorphous silicon (a-Si) film is provided as a semiconductor layer 103 on and around the gate insulating film 102. Further, a semiconductor layer 104 containing phosphorus (P) as impurity ions is provided on the semiconductor layer 103.
• a source electrode 10 5 and a drain electrode 1 0 6 are provided on the semiconductor layer 14 4 containing impurity ions.
• Source electrode 105 and drain electrode 106 are provided by molybdenum (Mo).
• Mo molybdenum
• the semiconductor layer 104 containing impurity ions is provided at the overlapping portion of the source electrode 105, the drain electrode 106 and the semiconductor 103.
• the source electrode 105 is connected to the data electrodes 1 2 1 and 1 2 2 connected to the external circuit.
• the drain electrode 106 is connected to the display electrode 7 made of a transparent conductive film to form a display pixel portion.
• the same film as the display electrode 7 is provided on the anodic oxidation electrode 5 connected to the gate electrode 101. Further, a part of the anodic oxidation electrode 5 is separated at the same side as the side of the same film as the display electrode 7 at the same separation side 10 to form a light shielding portion.
• a part of the anodizing electrode 5 is covered with a peripheral electrode 5 7 and a light shielding part electrode 5 5 which are the same film as the display electrode 7, and anodizing is performed by masking and etching the display area. Shown by broken line Is removed, making each goet electrode 1 0 1 independent. Then, in the outer peripheral part of the display area, the light shielding part formed by the remaining anodic oxidation electrode 5 can be cut off.
• the second substrate 1 1 is first transparently conductive on the second substrate 11 in order to reduce the amount of light reflected from the external light source 1 1 1 2.
• a counter electrode 13 consisting of Next, in order to prevent light leakage from the periphery of the display electrode 7, a black matrix 1 2 made of a chromium (Cr) film is provided.
• the reflected light 112 can be reduced by the interference of the counter electrode 13 made of a transparent conductive film, the second substrate 11 and the black matrix 12 made of a chromium film.
• the liquid crystal display device performs predetermined image display by the change in transmittance of the liquid crystal 16 in the display area.
• first substrate 1 and the second substrate 1 1 are provided with alignment films 15 and 15 respectively as treatment layers for arranging the molecules of the liquid crystal 16 regularly.
• the first substrate 1 and the second substrate 11 are made to face each other with a predetermined gap, and they are pasted together by a seal 60 to form the first substrate 1 and the second substrate 1.
• the liquid crystal 16 is sealed between it and the substrate 1 1 of the
• the anodic oxidation electrode 5 formed of the first electrode has a separation side which is separated in the same manner by the same film as the display electrode 7 in the periphery of the display area. .
• a light shielding portion can be provided around the display area by using the anodic oxidation electrode 5 remaining after separation.
• the anodic oxidation electrode 5 applies a voltage to each gate electrode 10 1 from the periphery.
• voltage can be supplied from the other portion.
• FIG. 19 a liquid crystal display according to an eighth embodiment of the present invention will be described with reference to FIGS. 19 to 21.
• T.sub.FD structure is used as a non-linear resistance element, and T.sub.FD elements are provided on the signal electrode side consisting of M rows.
• a light shielding portion provided around display electrode 7 utilizes a part of second anodic oxidation electrode 126 and a second non-linear resistive layer 12 on second anodic oxidation electrode 126 8 has a film thickness different from that of the first non-linear resistive layer 3 used for the non-linear resistive element 9.
• FIG. 19 is a plan view showing the overall structure of a liquid crystal display according to an eighth embodiment of the present invention.
• FIG. 20 is a plan view showing a part of FIG. 19 in an enlarged manner
• FIG. 21 is a cross-sectional view taken along the line J-- J ⁇ However, FIGS. 20 and 21 Here, the upper second substrate, the film formed thereon, etc., and the liquid crystal are not shown.
• a first electrode made of a tantalum (T a) film As a first electrode made of a tantalum (T a) film, a lower electrode 2, a signal electrode 4, a first anodic oxidation electrode 5 and a second anodic oxidation electrode 1 are formed on the first substrate 1. 2 6, an auxiliary electrode 1 2 7 and an interconnection electrode 6 6 are provided, and on the lower electrode 2, the first anodic oxidation electrode 5 and the signal electrode 4, an anodic oxide film of a first electrode is formed.
• a first non-linear resistive layer 3 made of an oxide tantalum (Ta 2 O 5) film is provided.
• a second non-linear resistive layer comprising a tantalum oxide (T a 2 O 5) film as an anodic oxide film of the first electrode 1 Set 2 8
• connection of the first and second anodic oxidation electrodes 5 and 1 2 6 to each other is carried out.
• interconnect electrodes 65 and 65 are provided on both ends of the first substrate 1.
• the first anodic oxidation electrode 5 and the second anodic oxidation electrode 1 2 6 are separated from each other.
• the film thickness of the second non-linear resistive layer 1 2 8 is made thicker than that of the first non-linear resistive layer 3 used for the non-linear resistive element 9.
• the first anodic oxidation electrode 5 consisting of the first electrode is composed of the signal electrode 4 in the M row and the counter electrode 13 in the N row.
• a plurality of signal electrodes. 4 are connected to each other around the periphery of the display region 18 in the form of a triangle.
• the second anodic oxidation electrode 126 has a configuration in which a plurality of auxiliary electrodes 127 are connected to each other by a connecting portion 66.
• the upper electrode 6 on the first non-linear resistance layer 3 the display electrode 7 connected to the upper electrode 6, and a part of the first anodic oxidation electrode 5
• the connection electrode 8 is made of indium tin oxide (ITO) film.
• the lower electrode 2, the first non-linear resistive layer 3 and the upper electrode 6 constitute a non-linear resistive element 9 of an FD structure.
• a part of the display electrode 7 covers the auxiliary electrode 1 2 7 connected to the second anodic oxidation electrode 1 2 6, and the display electrode 7 and the auxiliary electrode 1 2 2 form a light shielding part.
• a tantalum oxide film is formed on the first substrate 1, the non-linear resistance element 9, the signal electrode 4, the display electrode 7, the first anodic oxidation electrode 5, and the second anodic oxidation electrode 1 26.
• a separation opening 92 is provided on the first anodic oxidation electrode 5 and the second anodic oxidation electrode.
• the first anodic oxidation electrode 5 is separated and constitutes an independent signal electrode 4 by the separation side 10 which is the same as the separation opening 9 2, and the second anodic oxidation electrode 1 2 6 constitutes an independent auxiliary electrode 1 2 7.
• an opening 4 9 is provided around the display electrode 7, and the auxiliary electrode 1 2 7 is provided for each display electrode 7 by the same separation side 10 as the opening 4 9 of the display electrode 7 or the insulating film 4 8. It separates and becomes a shade part.
• connection electrode 8 An opening 93 is also provided on the connection electrode 8 to enable connection to an external circuit.
• the configuration of the second substrate 11 side is the same as that of the above-described embodiment, and a black matrix made of a chromium (Cr) film for preventing light leakage from the gap of the display electrode 7;
• An interlayer insulating film or the like is provided in order to ensure electrical insulation between the counter electrode 13, black, matrix, and the counter electrode 13.
• the first substrate 1 and the second substrate 1 1 are attached to each other at a constant distance, and liquid crystal is sealed to form a liquid crystal display device.
• the second anodic oxidation electrode 126 consisting of the first electrode is independent from the initial stage of the first anodic oxidation electrode 5. Therefore, the influence of the second anodic oxidation electrode 126 is not given to the first anodic oxidation electrode 5. Furthermore, the second anodic oxidation electrode 126 separates in a self-aligned manner with the display electrode 7 consisting of the second electrode or the opening 4 9 of the insulating film 4 8 at the periphery of the display area. It has a separation side 10 and constitutes a light shielding part that is independent for each display shield 7.
• a second non-linear resistance layer 1 2 8 provided on the second anodic oxidation electrode 1 26 is provided on the lower electrode 2 by the first anodic oxidation electrode 5 If the thickness of the layer 3 is greater than that of the layer 3 and the insulation property is enhanced, the display quality is not affected even if the display electrode 7 and the auxiliary electrode 12 7 are electrically short-circuited. , Yield better.
• FIG. 22 is a plan view showing a part of the liquid crystal display in an enlarged manner
• FIG. 23 is a cross-sectional view taken along the line K-K of FIG.
• parts corresponding to those in FIGS. 15 and 16 are assigned the same reference numerals.
• a lower electrode 2 On the first substrate 1 in this embodiment, a lower electrode 2, a first data electrode 8 1 and a first data electrode 8 1 are used as a first electrode made of a tantalum (T a) film. And a wire connection 7 6 connecting the lower electrode 2 and 3 A first anodic oxidation electrode 5, a second anodic oxidation electrode 1 2 6, an auxiliary electrode 1 2 7 and an interconnection electrode 6 6 are provided.
• a first oxide film of tantalum oxide (T a 205) is formed as an anodic oxide film of the first electrode.
• a non-linear resistance layer 3 is provided.
• a second non-linear resistance is formed of a tantalum oxide (T a2 O5) film as an anodic oxide film of the first electrode.
• T a2 O5 tantalum oxide
• the first anodic oxidation electrode 5 and the second anodic oxidation electrode 1 2 6 are separated from each other.
• the second non-linear resistance layer 1 2 8, non-linear resistance pixel value 9 made of the first are thick compared to the thickness in the non-linear resistive layer 3 t the first electrode used in the first anodizing
• the electrode 5 has a configuration in which the first data electrodes 8 1 of N rows are mutually connected around the display area, as shown in FIG.
• the second anodic oxidation electrode 126 has a configuration in which a plurality of auxiliary electrodes 127 are mutually connected.
• a second data electrode 83 is provided on the first data electrode 81, and is connected to the second data electrode 83.
• An upper electrode 84 for data electrode is provided on the non-linear resistance layer 3 of 1, and a display electrode 7 is provided on a part of the auxiliary electrode 1 2 7 and the first substrate 1.
• An upper electrode 85 for display electrode connected to the display electrode 7 is provided on the non-linear resistance layer 3 with an indium tin oxide (ITO) film.
• ITO indium tin oxide
• connection electrode 8 which is connected to the second data electrode 83 and forms a part of the first anodic oxidation electrode 5 is also provided with an indium tin oxide (ITO) film together with the second electrode.
• ITO indium tin oxide
• the lower electrode 2, the first non-linear resistive layer 3, and the upper electrode 8 4 for the data electrode constitute a first non-linear resistive element 86 of a TFT structure.
• a second non-linear resistive element 8 7 of TFD structure is formed by the lower electrode 2, the first non-linear resistive layer 3, and the upper electrode 8 5 for the display electrode.
• a part of the display electrode 7 covers the auxiliary electrode 1 2 7 connected to the second electrode for anodic oxidation 1 2 6, and a light shielding portion is formed by the display electrode 7 and the auxiliary electrode 1 2 7.
• An insulating film 48 made of a tantalum oxide film (Ta 2 05) is provided to cover the upper surfaces of the electrodes 126.
• the insulating film 48 is provided with a separation opening 9 2 on the first anodic oxidation electrode 5 and the second anodic oxidation electrode 126. Then, the first anodic oxidation electrode 5 is separated by a separation side 10 identical to the separation opening 9 2 to form an independent first data electrode 8 1. The second anodic oxidation electrode 1 2 6 is also separated to constitute an independent auxiliary electrode 1 2 7.
• an opening 4 9 is provided around the display electrode 7, and the auxiliary electrode 1 2 7 is displayed by the same separation side 10 as the opening 4 9 of the display electrode 7 or the insulating film 4 8.
• Each electrode 7 is separated to form a light shielding portion.
• the second anodic oxidation electrode 126 formed of the first electrode is independent from the initial stage of the first anodic oxidation electrode 5. Therefore, the influence of the second anodic oxidation electrode 126 is not given to the first anodic oxidation electrode 5. Furthermore, the second anodic oxidation electrode 126 is a separation edge that is separated in a self-aligned manner with the display electrode 7 or the opening 4 9 of the insulating film 4 8 at the periphery of the display area. Each display electrode 7 has an independent light shielding portion.
• a second non-linear resistance layer 1 2 8 provided on the second anodic oxidation electrode 1 2 6 is provided on the lower electrode 2 by the first anodic oxidation electrode 5 1st non-linear resistance layer 1 2 8
• the film thickness is made thicker than layer 3 and the insulation property is enhanced. Therefore, even if the display electrode 7 and the auxiliary electrode 1 2 7 of the display electrode 7 cause an electrical short circuit, the display quality is affected.
• a light shielding portion 7 5 can be provided around the display electrode 7 without yield.
• a part of the anodic oxidation electrode can be used for the light shielding portion.
• the opening of the protective insulating film is formed on the portion of the anodic oxidation electrode to be separated.
• the anodic oxidation electrode can be easily separated by performing an etching process using the resist as a mask and the resist used for forming the protective insulating film or the opening of the protective insulating film as a mask.
• FIG. 24 a liquid crystal display according to a tenth embodiment of the present invention will be described with reference to FIGS. 24 and 25.
• FIG. 24 a liquid crystal display according to a tenth embodiment of the present invention will be described with reference to FIGS. 24 and 25.
• FIG. 24 is a plan view showing a partial region of a first substrate on which a TFT device of a liquid crystal display according to a tenth embodiment of the present invention is formed.
• FIG. 25 is a cross-sectional view taken along the line L-L in FIG.
• An anodic oxidation electrode 5 and a lower electrode 2 each made of a tantalum (Ta) film are provided as a metal film on the first substrate 1 which is an active substrate for forming a TFT element.
• the width W 1 of the anodizing electrode 5 is wider than the width W 2 of the signal electrode 4 except for the periphery of the lower electrode 2.
• this anodic oxidation electrode 5 is an anodic oxidation electrode at one end.
• a plurality of lines are electrically connected by 5 a, and the other end is connected to a connection electrode 8 for applying a signal to the non-linear resistance element from an external circuit.
• the anodic oxidation electrode 5 is used as an electrode when the non-linear resistance layer 3 is formed on the surface of the lower electrode 2 by a treatment for anodic oxidation.
• a wide positive electrode 5 for oxidation of width W 1 is provided between the signal electrode 4 and the display electrode 7.
• the etching removing portion 1 21 which is a part of the anodizing electrode 5 is removed in the final shape. That is, FIG. 2 shows the middle of the manufacturing process to make it easy to understand the explanation.
• a non-linear resistive layer 3 made of a tantalum oxide (T a 2 O 5) film formed by anodizing the lower electrode 2 is provided on the surface of the lower electrode 2.
• a transparent conductive film is provided on the substrate 1 and an overlapping portion 12 22 which is a part of the anodizing electrode 5 to form a display electrode 7. Then, an upper electrode 6 connected to the display electrode 7 is provided on the lower electrode 2. Furthermore, a transparent conductive film is provided also on the anodic oxidation electrode 5 to form a connection electrode 8.
• a partial region of the display electrode 7 has an overlapping portion 12 2 which is a region overlapping with a partial region of the anodic oxidation electrode 5.
• the lower electrode 2, the non-linear resistance layer 3 and the upper electrode 6 constitute a non-linear resistance element (TFD element) 9.
• each of the upper electrode 6 and the display electrode 7 is formed of a transparent conductive film, for example, an indium tin oxide (I T O) film.
• I T O indium tin oxide
• the etching removal portion 1 21 between the signal electrode 4 which is a part of the anodizing electrode 5 and the overlapping portion 1 2 2 below the display electrode 7 is removed and the signal electrode 4 is formed.
• the display electrode 7 made of a transparent conductive film are separated.
• the anodic oxidation electrode 5 a connecting the plurality of signal electrodes 4 is also removed, and each signal electrode 4 becomes independent.
• etching removal portion 1 2 1 between the display electrodes 7 is also removed, and each display electrode 7 is also independent.
• the width W 1 of the anodizing electrode 5 is the width W of the signal electrode 4. It will be two.
• the width of the anodizing electrode 5 is W 1
• the width of the signal electrode 4 is made wider than the width W 2 until the lower portion of the display electrode 7. Keep it open. Further, the adjacent display electrodes 7 are also connected by the anodic oxidation electrode 5.
• the anodic oxidation electrode 5 is etched to remove the etching removal portion 12 1 which is a part of the anodic oxidation electrode 5, and the width of the signal cathode 4 is set to W 2 I assume. Furthermore, the etching removal portion 1 2 1 provided between the adjacent display electrodes 7 is also removed to form isolated display electrodes 7.
• the width of the anodizing electrode 5 is increased (W 1) at the time of anodizing, and a uniform anodic oxide film 3 can be formed in a short time.
• the display electrode 7 is a transparent conductive film, it is difficult to inspect the etching condition around the display electrode 7 because it is transparent.
• the tantalum film and the tantalum oxide film are present as the anodic oxidation electrode 5 around the display electrode 7, even if the display electrode 7 is a transparent conductive film, the etching removal is performed.
• the transparent conductive film becomes an etching mask, and the tantalum or tantalum oxide film and the tantalum film remain, making it easy to inspect the etching state of the transparent conductive film around the display electrode 7.
• the transparent conductive film can also be removed during the etching process of the etching removal portion 121, and the etching residual film around the display electrode 7 is removed cleanly. be able to.
• the width (W 1) of the anodizing electrode 5 is increased, if there is a break in the width (W 2) of the signal electrode 4, the distance between the display electrode 7 and the signal electrode 4 is The anodic oxidation electrode 5 can be used to prevent the disconnection of the signal electrode 4.
• FIG. 26 is a plan view showing a state in which a disconnection point 4 d is generated in the signal electrode 4 in this embodiment.
• the anodic oxidation electrode 5 is made wide enough to have the width W 2 of the signal electrode 4, anodic oxidation can be performed. Furthermore, the signal electrode 4 is not broken by forming it so that the broken part of the signal electrode 4 is bypassed by using a part of the anodic oxidation electrode 5 formed around the signal electrode 4.
• the display electrode 7 is provided with a deletion part 7 a for deleting a part. .
• a tantalum (T a) film is sputtered by a thickness of 150 nm as a metal film on the entire surface of the first substrate 1 which is an absorptive substrate made of glass shown in FIG. 27. Form.
• a photosensitive resin (not shown) is formed on the entire surface of the tantalum film by a spin coating method, and exposure and development processing is performed using a predetermined hot mask to pattern the photosensitive resin. Thereafter, using the patterned photosensitive resin as an etching mask, the tantalum film is etched by hot etching to form an anodic oxidation electrode 5, a lower electrode 2 and a plurality of signal electrodes 4 (anodic oxidation electrode Pattern with the part that connects).
• the etching of the tantalum film is performed by reactive ion etching (or
• a mixed gas of sulfur hexafluoride (SF 6) and oxygen (02) is used as an etching gas.
• the flow rate of sulfur hexafluoride is 100 to 200 Osccm
• the oxygen flow rate is 10 to 40 sccm
• the pressure is
• the anodic oxidation electrode 5 is used as an anode, and as an anodic oxidation solution,
• a voltage of 30 to 40 V is applied to carry out the anodic oxidation treatment of the tantalum film.
• the non-linear resistance layer 3 composed of a tantalum oxide film (T a 205) is formed on the surface of the side wall and the upper surface of the lower electrode 2 and the electrode 5 for anodic oxidation.
• an indium tin oxide (ITO) film is formed over the entire surface to a film thickness of 100 nm as a transparent conductive film using a sputtering method. Thereafter, a photosensitive resin (not shown) is formed on the indium tin oxide film. Then, the indium tin oxide film is etched to form a pattern simultaneously with the display electrode 7, the upper electrode 6 connected to the display electrode 7, and the connection electrode 8 (not shown), as shown in FIG.
• ITO indium tin oxide
• This etching of indium tin oxide is performed by wet etching using a liquid etchant of ferric oxide and hydrochloric acid. At this time, the etching temperature is set at 30-40.
• etching removal portion 1 2 1 between the anodizing electrode 5 and the overlapping portion 1 2 2 at the lower portion of the display electrode 7 a photosensitive layer is formed. Fat 1 2 5 forms.
• the etching removing section 1 2 1 etches the display electrode 7 made of a photosensitive resin 1 2 5 5 and an indium tin oxide film as a mask for etching using an RIE apparatus.
• This etching condition uses a mixed gas of sulfur hexafluoride (S F) and oxygen (O 2) as an etching gas. And of sulfur hexafluoride
• the signal electrode 4 consisting of a part of the anodic oxidation electrode 5 and the overlapping portion 12 22 of the display electrode 7 can be separated by etching away the etching removal portion 12 1.
• the positive oxidation electrode 5 is separated from the display electrode 7 to become the signal electrode 4 and the external circuit (not shown).
• the connection electrode 8 connected to the signal electrode 4 the signal electrode 4 and the lower electrode 2 connected thereto, the non-linear resistive layer 3 formed on the lower electrode 2, and the upper electrode 6 formed on the non-linear resistive layer 3.
• the target voltage can be applied to the display electrode 7 connected to the upper electrode 6.
• non-linear resistance element (TFD element) 9 is formed by the lower electrode 2, the non-linear resistance layer 3 and the upper electrode 6.
• the etching removal portion 1 2 1 can be formed in a shape that matches the lower surface region of the display electrode 7.
• the signal electrode 4 and the etching are performed when the etching removal portion 121 is etched.
• the transparent conductive film in the etching failure part between the display electrodes 7 can be removed simultaneously.
• the indium oxide oxide film remains on the large surface after etching, the indium tin oxide film remains on the etching removal portion 121, so the oxide of the non-linear resistance layer 3 under the indium tin oxide film is formed.
• the tantalum and the lower electrode 2 remain, so only the transparent conductive film It is much easier to inspect short spots than in the past.
• the refractive index of the liquid crystal or the thickness or orientation of the substrate 1 is used. It is difficult to detect the etching residual film of the transparent conductive film around the display electrode 7 because of the refractive index of the film or the like.
• FIG. 30 a liquid crystal display according to a first embodiment of the present invention will be described based on FIGS. 30 and 31.
• FIG. 30 a liquid crystal display according to a first embodiment of the present invention will be described based on FIGS. 30 and 31.
• FIG. 30 is a plan view showing a partial region of the first substrate forming the TFD element of the liquid crystal display device in the embodiment 11 of this invention, and FIG. -A cross-sectional view along the M line.
• an anodic oxidation electrode 5 consisting of a tantalum (T a) film as a metal film, an island-like lower electrode 2, an anodic oxidation electrode 5 and a lower electrode 2
• a wire connection 7 6 shown in phantom
• the width of the anodic oxidation electrode 5 is W 1 wider than the width W 2 of the first data electrode 8 1 except for the periphery of the island-shaped lower electrode 2.
• a plurality of anodic oxidation electrodes 5 are connected to each other by an anodic oxidation electrode 5 a at one end, and the other end is connected to a connection electrode 8 for applying a signal to the nonlinear resistance element from an external circuit. It is covered.
• the anodic oxidation electrode 5 is used as an electrode when the non-linear resistance layer 3 is formed on the surface of the lower electrode 2 by anodizing treatment.
• An anodic oxidation electrode 5 is provided between the first data electrode 8 1 and the display electrode 7.
• the etching removal portion 1 21 which is a part of the anodic oxidation electrode 5 is removed in the final structure.
• the wire connection 7 6 connected to the first data electrode 8 1 and the island-like lower electrode 2 is also removed in the final structure. That is, the plan view of FIG. 30 and the cross-sectional view of FIG. 31 indicate the middle of the manufacturing process by a broken line so that the description can be easily understood.
• tantalum oxide (T a 2 O 5) is formed by anodizing the tantalum film on the surface of the lower electrode 2 in the form of an island through the anodic oxidation electrode 5 and the wire connection portion 76.
• a non-linear resistance layer 3 made of a film is provided, and a transparent conductive film is provided on the overlapping portion 12 2 of the anodic oxidation electrode 5 and the substrate 1 to form a display electrode 7.
• a display electrode upper electrode 8 5 connected to the display electrode 7 is provided on the lower electrode 2.
• a second data electrode 83 is provided on the anodizing electrode 5, and an upper electrode 84 for data electrode connected to the second data electrode 83 is further provided.
• connection electrode 8 made of a transparent conductive film is provided on the anodic oxidation electrode 5 made of tantalum for applying a signal from the external circuit to the non-linear resistance element portion.
• the anode of the anodic oxidation electrode 5 has a frame shape.
• the connection electrode 8 made of a transparent conductive film covers the frame-shaped tantalum.
• the frame-like tantalum when connecting the external circuit and the connection electrode 8, the frame-like tantalum can be used to make the position clearer than the transparent conductive film, so the alignment accuracy is improved. Furthermore, by providing a transparent conductive film inside and outside the frame-shaped tantalum, the connection status of the external circuit and the input section can be confirmed through the transparent conductive film pad.
• the alignment accuracy is improved by providing tantalum in a frame shape, and the island-like lower electrode 2, the non-linear resistance layer 3 and the upper electrode 8 4 for data electrode
• the first non-linear resistance element (a FD element) 8 6 is constructed.
• a second non-linear resistive element (TFD element) 8 7 is configured by the island-shaped lower electrode 2, the non-linear resistive layer 3, and the upper electrode 8 5 for the display electrode.
• the display electrode upper electrode 85, the data electrode upper electrode 84 and the display electrode 7 are all formed of a transparent conductive film, for example, an indium tin oxide (ITO) film.
• ITO indium tin oxide
• an overlapping portion 12 22 of the anodizing electrode 5 and the display electrode 7 made of a transparent conductive film, and a first data electrode 8 1 made of tantalum under the second data electrode 83 are used. It is a structure to separate. Then, the etching removal portion 1 2 1 between the first data electrode 8 1 and the display electrode 7 is also removed and separated from the display electrode 7.
• the width W 1 of the anodizing electrode 5 becomes the width W 2 as the first data electrode 8 1.
• the width W 1 of the anodic oxidation electrode 5 is made wider than the width W 2 of the first data electrode 8 1 so as to extend to the lower part of the display electrode 7. Further, the adjacent display electrodes 7 are also connected by the anodic oxidation electrode 5.
• the wiring connection portion 7 6 connecting the first data electrode 8 1 and the island-shaped lower electrode 2 is etched.
• the etching removal portion 12 1 located between the first data electrode 8 1 and the display electrode 7 is etched to form the isolated display electrode 7 and the first It is assumed that the data electrode 8 1.
• the anodic oxidation electrode 5 is anodized at the time of anodic oxidation.
• the width is as wide as W 1, a uniform anodic oxide film can be formed in a short time. Furthermore, as in the example of FIG. 26, since the width of the anodic oxidation electrode is wide, If there is a break in the width W 2 of the first data electrode 8 1, the first data electrode 8 is used by using the anodizing electrode 5 between the display electrode 7 and the data electrodes 8 1 and 8 3. According to this embodiment, it is necessary to separate the island-shaped lower electrode 2 from the first data electrode 81. Therefore, it is possible to prevent the anodic oxidation electrode 5 from the first data electrode 81. Since the process of processing the data electrode 1 of 1 can also be performed at the same time, it does not add a process.
• FIG. 32 to 34 are sectional views corresponding to FIG. 31 showing the method of manufacturing the active substrate of the liquid crystal display device in the twelfth embodiment in the order of steps.
• a tantalum (T a) film is sputtered with a thickness of 200 nm as a metal film on the entire surface of the first substrate 1 which is an active substrate made of glass shown in FIG. 32. Form by ring method.
• a photosensitive resin (not shown) is formed on the entire surface of the tantalum film by a spin coating method, and exposure and development processing is performed using a predetermined photomask to pattern a photosensitive resin. .
• the anodic oxidation electrode 5 including the portion to be the first data electrode 8 1 is formed by the etching process using the tantalum film, and the island shape is formed.
• a pattern is formed so as to mutually connect the lower electrode 2, the wire connection part 7 6 connecting the anodic oxidation electrode 5 and the island-like lower electrode 2, and the plurality of anodic oxidation electrodes 5 to each other.
• the etching of the tantalum film is performed using an RIE apparatus.
• the etching conditions are sulfur hexafluoride (SF) as an etching gas.
• the anodic oxidation electrode 5 was used as an anode, and as an anodic oxidation solution,
• the tantalum film is anodized by applying a voltage of 16 to 20 V using an aqueous solution of 0.01 to 1.0 wt% of citric acid, an aqueous solution of ammonium borate or an aqueous solution of phosphoric acid.
• the non-linear resistance layer 3 composed of a tantalum oxide film (T a 2 O 5) is formed with a thickness of 30 to 40 nm on the surface of the side wall and the upper surface of the lower electrode 2 and the anodic oxidation electrode 5.
• an indium tin oxide (ITO) film is formed over the entire surface to a thickness of 15 O n as a transparent conductive film.
• a photosensitive resin (not shown) is formed on the indium tin oxide film.
• the indium tin oxide film is etched to form the display electrode 7, the display electrode upper electrode 85 connected to the display electrode 7, the connection electrode 8, and the second data, as shown in FIG. 33.
• the electrode 8 3 and the upper electrode 8 4 for data electrode connected to the second data electrode 8 3 are simultaneously patterned.
• This indium tin oxide is etched by wet etching using an aqueous etchant of bromine (H B r). At this time, the etchant temperature is set to 25 ° C to 30 ° C.
• the wiring connection portion 76 connecting the anodic oxidation electrode 5 and the island-shaped lower electrode 2 is removed to form an isolated island-shaped lower electrode 2.
• Forming photosensitive resin 125 Forming photosensitive resin 125.
• the etching removal portion 12 1 which is a part of the electrode 5 for positive electrode oxidation is removed, and the electrode 5 for positive electrode oxidation is overlapped with the first data electrode 8 1 and the overlapping portion 1 below the display electrode 7. It separates into 2 2.
• This anodic oxidation electrode 5 uses an RIE apparatus with the display electrode 7 made of a photosensitive resin 125 and an indium tin oxide film and the second data electrode 8 3 as a mask for etching. Etching process.
• This etching condition is sulfur hexafluoride (SF) as an etching gas. 6) Use a mixed gas of oxygen (02). And the flow rate of sulfur hexafluoride is 100 to 200 seem, the oxygen flow rate is 10 to 4 Osccm, the pressure is 4 to: I 2 X 10 to 2 torr, and the power consumption is Perform at 0.2 to 0.5 k W cm 2 .
• the anodizing electrode 5 is separated into the first data electrode 8 1 and the overlapping portion 1 2 2 at the bottom of the display electrode 7,
• the signal of the circuit can be applied through the following route ⁇ i.e., Connection electrode 8 connected to an external circuit (not shown), first data electrode 8 1 connected to anodic oxidation electrode 5, second data
• the target voltage is applied to the display electrode 7 connected to the display electrode upper electrode 85 through 5.
• the photosensitive resin 125, the display electrode 7 and the second data electrode 83 are used as an etching mask to separate the island-shaped lower electrode 2 and perform etching.
• the etching removal portion 1 21 between the first data electrode 8 1 and the overlapping portion 1 2 2 of the anodic oxidation electrode 5 is simultaneously removed, so it is not a process addition 0.
• FIG. 35 a liquid crystal display according to a twelfth embodiment of the present invention will be described with reference to FIGS. 35 and 36.
• FIG. 35 a liquid crystal display according to a twelfth embodiment of the present invention.
• FIG. 35 is a plan view showing a partial region of a first substrate forming the TFD element of the liquid crystal display device in the twelfth embodiment.
• FIG. 36 is a cross-sectional view taken along the line N-N of FIG. 35.
• the anodic oxidation electrode 5 of the 11th embodiment is extended to the top, bottom, left and right of the display electrode 7, and overlapping portions 12 2 are provided on the top, bottom, left and right of the display electrode 7.
• an anodic oxidation electrode 5 consisting of a tantalum (T a) film as a metal film, an island-like lower electrode 2, an anodic oxidation electrode 5 and a lower electrode 2
• a wire connection 7 6 shown in phantom in Figure 35
• the width of the anodic oxidation electrode 5 is wider than the width W 2 of the first data electrode 8 1 except for the periphery of the island-shaped lower electrode 2. Furthermore, the anodic oxidation electrodes 5 are connected to each other vertically and horizontally.
• the anodic oxidation electrode 5 has a configuration in which one end is connected to each other by the runner 5 a, and the other end is used to apply a signal to the non-linear resistance element from an external circuit. It is covered with the connection electrode 8 of.
• the anodic oxidation electrode 5 is used as an electrode when forming the non-linear resistance layer 3 on the surface of the lower electrode 2 by anodizing treatment.
• An anodic oxidation electrode 5 is also provided between the first data electrode 8 1 and the display electrode 7 in FIG. 35 and also between the display electrode 7.
• the etching removal portion 1 2 1 which is a part of the anodizing electrode 5 is removed in the final structure.
• the wire connection 7 6 connected to the first data electrode 8 1 and the island-like lower electrode 2 is also removed in the final structure. That is, the plan view of FIG. 35 and the cross-sectional view of FIG. 36 show virtual lines in the middle of the manufacturing process so that the description can be easily understood.
• tantalum oxide (Ta 2 O 5) is formed by anodizing the tantalum film on the surface of the lower electrode 2 in the form of an island via the anodic oxidation electrode 5 and the wire connection portion 7 6.
• a non-linear resistive layer 3 composed of a film is provided.
• a transparent conductive film is provided on the overlapping portion 122 of the anodic oxidation electrode 5 and on the substrate 1 to form a display electrode 7.
• an upper electrode 85 for display electrode connected to the display electrode 7 is provided on the lower electrode 2.
• a second data electrode 8 3 is provided on the anodic oxidation electrode 5, and an upper electrode 8 4 for data electrode connected to the second data electrode 83 is further provided.
• connection electrode 8 made of a transparent conductive film is provided on the anodic oxidation electrode 5 made of tantalum for applying a signal from the external circuit to the non-linear resistance element portion.
• the tantalum has a frame-like shape.
• the transparent conductive film covers the frame-like tantalum. With this shape, when the external circuit and the connection electrode 8 are connected, the position of the frame-shaped tantalum can be made clearer than that of the transparent conductive film, so that the alignment accuracy is improved. Furthermore, by providing the transparent conductive film inside and outside the frame-shaped tantalum, the connection status of the external circuit and the input unit can be confirmed through the transparent conductive film pad.
• a first non-linear resistive element (TFD element) 86 is configured by the island-shaped lower electrode 2, the non-linear resistive layer 3, and the upper electrode 8 4 for the data electrode.
• a second non-linear resistive element (TFD element) 8 7 is configured by the island-shaped lower electrode 2, the non-linear resistive layer 3, and the upper electrode 8 5 for the display electrode.
• each of the display electrode upper electrode 85, the data electrode upper electrode 84 and the display electrode 7 is formed of a transparent conductive film, for example, an indium tin oxide (ITO) film.
• ITO indium tin oxide
• the anodic oxidation electrode 5 comprises an overlapping portion 12 22 of the anodic oxidation electrode 5 and the display electrode 7 made of a transparent conductive film, and a tantalum below the second data electrode 8 3.
• the structure is to separate into the first data electrode 8 1.
• the etching removing portion 1 2 1 between the first data electrode 8 1 and the display electrode 7 is also removed to separate it from the display electrode 7.
• the width of the anodizing electrode 5 is the width W 2 of the first data electrode 8 1.
• the width W 1 of the anodizing electrode 5 is set as Make it wider than the width (W 2) of 1 data electrode 8 1 and extend it to the lower part of display electrode 7. Further, the adjacent display electrodes 7 are also connected by the anodizing electrode 5.
• the wiring connection portion 7 6 connecting the first data electrode 8 1 and the island-shaped lower electrode 2 is etched.
• the etching removal portion 12 1 located between the first data electrode 8 1 and the display electrode 7 is etched to separate the isolated display electrode 7 and the first Let it be the data electrode 8 1.
• the anodic oxidation electrode 5 is made wider at the time of anodic oxidation and is traversed vertically and horizontally, it becomes possible to form a uniform anodic oxide film in a short time.
• FIG. 37 a liquid crystal display device according to a thirteenth embodiment of the present invention will be described with reference to FIGS. 37 and 38.
• FIG. 37 a liquid crystal display device according to a thirteenth embodiment of the present invention will be described with reference to FIGS. 37 and 38.
• Fig. 3 7 is a plan view showing a partial region of the first substrate forming the TFD element of the liquid crystal display device in the 13th embodiment
• Fig. 3 8 is a plan view of Fig. — A cross-sectional view taken along the line P.
• the insulating film 4 8 is formed in the 11th embodiment, the opening 49 is provided in the insulating film 4 8, and the island-shaped lower electrode 2 and the first electrode 4 are formed by using the opening 49. Etch and remove wiring connection 7 6 connecting data electrode 8 1 of.
• the opening 4 9 of the insulating film 4 8 is located between the first data electrode 81 or the second data electrode 83 and the display electrode 7, or between the display electrode 7 and the display electrode 7.
• the first data electrode 8 1 and the display electrode 7 are formed by removing a portion of the anodizing electrode 5, that is, the etching removal portion 12 1. It consists of the composition to separate.
• an anodic oxidation electrode 5 consisting of a tantalum (T a) film as a metal film, an island-like lower electrode 2, an anodic oxidation electrode 5 and a lower electrode 2 Provide a wire connection 7 6 and (shown in phantom) to connect the.
• the width W 1 of the anodizing electrode 5 is wider than the width W 1 of the first data electrode 8 1 except for the periphery of the island-shaped lower electrode 2.
• a plurality of anodic oxidation electrodes 5 are connected to each other at one end by runners 5 a.
• the other end of the anodic oxidation electrode 5 is covered with a connection electrode 8 for applying a signal from the external circuit to the non-linear resistance element.
• the anodic oxidation electrode 5 is used as an electrode when forming the non-linear resistance layer 3 on the surface of the lower electrode 2 by anodizing treatment.
• An anodic oxidation electrode 5 is provided between the first data electrode 8 1 and the display electrode 7 shown in FIG.
• the etching removal portion 1 2 1 is removed in the final structure.
• wire connection 7 6 connected to the first data electrode 8 1 and the island-like lower electrode 2 is also removed in the final structure. That is, in FIGS. 37 and 38, the middle of the manufacturing process is indicated by phantom lines so that the explanation can be easily understood.
• tantalum oxide (T a 2 O 5) is formed by anodizing the tantalum film on the surface of the lower electrode 2 in the form of an island through the anodic oxidation electrode 5 and the wiring connection portion 7 6.
• a non-linear resistive layer 3 composed of a film is provided.
• a transparent conductive film is provided on the overlapping portion 12 2 of the anodizing electrode 5 and on the substrate 1 to form a display electrode 7. And contact with this display electrode 7 An upper electrode 85 for display electrode to be connected is provided on the lower electrode 2. Furthermore, a second data electrode 83 is provided on the anodizing electrode 5, and an upper electrode 84 for data electrode connected to the second data electrode 83 is further provided. Further, the connection electrode 8 made of a transparent conductive film is provided on the anodic oxidation electrode 5 made of a tantalum for applying a signal from the external circuit to the non-linear resistance element portion. In the connection electrode 8, tantalum has a frame shape. Also, the transparent conductive film covers the frame-like tantalum and has a quadrilateral shape. With this shape, when connecting the external circuit and the connecting electrode 8, the frame-like tantalum can make the position clearer than that of the transparent conductive film, thereby improving the alignment accuracy.
• the connection state of the external circuit and the input part can be confirmed through the transparent conductive film.
• a first non-linear resistive element (TFD element) 8 6 is configured by the island-shaped lower electrode 2, the non-linear resistive layer 3, and the upper electrode 8 4 for the data electrode.
• a second non-linear resistive element (TFD element) 8 7 is configured by the island-shaped lower electrode 2, the non-linear resistive layer 3, and the upper electrode 8 5 for the display electrode.
• the display electrode upper electrode 8 5, the data electrode upper electrode 8 4, and the display electrode 7 are each formed of a transparent conductive film, for example, an indium tin oxide (ITO) film.
• ITO indium tin oxide
• This insulating film 48 is provided with a tantalum oxide film (Ta 205) by sputtering.
• the insulating film 48 is provided with a wiring connection opening 91 (shown by an alternate long and short dash line) for removing the wiring connection portion 76 as the opening 4 9. Furthermore, A separation opening 92 is also provided on the etching removal portion 1 21 between the overlapping portion 1 2 2 of the anodizing electrode 5 and the display electrode 7.
• connection opening 9 3 of the insulating film 4 8 is provided on the connection electrode 8 of the transparent conductive film, and the insulating film 4 8 is left in the other part.
• insulating film 48 covers most of the wiring. There is no possibility of an electrical short between the input part and wiring close to each other due to dust or the like.
• the wiring connection portion 76 has the same side as the wiring connection opening 9 1 of the insulating film 4 8 and the side of the display electrode 7, and the island-shaped lower electrode 2 is connected from the anodic oxidation electrode 5 to the wiring It has the same side as the connection opening 9 1.
• the etching removal portion 12 1 has the same side as the separation opening portion 9 2 of the insulating film 4 8 and the side of the display electrode 7, and the electrode 5 for anodic oxidation is formed by the etching removal portion 1 2 1. Becomes the first data electrode 8 1, and becomes the configuration of the independent display electrode 7.
• the width of the anodizing electrode 5 is the width W 2 of the first data electrode 8 1.
• the width of the anodizing electrode 5 is set to W 1 and the width of the first data electrode 8 1 is made wider than the width W 2, and it is extended to the lower portion of the display electrode 7. deep. Further, the adjacent display electrodes 7 are also connected by the anodic oxidation electrode 5.
• the first data electrode 81 and the island-shaped lower electrode 2 are connected.
• the wiring connection portion 76 is etched to form the isolated lower electrode 2 and at the same time the etching removal portion 1 21 between the first data electrode 8 1 and the display electrode 7 is etched. To the isolated display electrode 7 and the first data electrode 8 1.
• the width of the anodic oxidation electrode can be increased at the anodic oxidation, and a uniform anodic oxide film can be formed in a short time. 5 Furthermore, as in the example of FIG. 26, since the width (W 1) of the anodizing electrode is increased, there are broken portions in the width (W 2) of the first data electrode 8 1. In the case, a part of the anodic oxidation electrode 5 between the display electrode 7 and the first data electrode 81 can be used to prevent the disconnection of the first data electrode 8 1.
• the island-shaped lower electrode 2 it is necessary to separate the island-shaped lower electrode 2 from the first data electrode 81. Furthermore, in the connection electrode 8, an opening is provided in the insulating film 48, It is necessary to make an electrical connection with the circuit. Therefore, since the removal of the wiring connection portion 7 6 and the step of forming the first data electrode 1 8 from the anodic oxidation electrode 5 1 can be performed simultaneously with the processing of the insulating film 48, It does not add to the process at all.
• two upper electrodes may be provided.
• FIG. 39 a liquid crystal display device according to a fourteenth embodiment of the present invention will be described based on FIGS. 39 and 40.
• FIG. 39 a liquid crystal display device according to a fourteenth embodiment of the present invention will be described based on FIGS. 39 and 40.
• the fourteenth embodiment relates to the structure of the TFT element.
• FIG. 3 9 is a plan view showing a partial region of the first substrate forming the TFT element of the liquid crystal display device according to the 14th embodiment
• FIG. 40 is a plan view of FIG. It is sectional drawing which follows Q line.
• An anodic oxidation electrode 5 and a portion of the anodic oxidation electrode 5 are formed of a tantalum (T a) film, all of which are metal films on the first substrate 1 which is an active substrate for forming a TFT element.
• T a tantalum
• the anodic oxidation electrode 5 is composed of a gate electrode 10 1 and an etching removal portion 12 1 and an overlapping portion 12 2.
• the width of the anodizing electrode 5 is as wide as W 1 except for the periphery of the gate electrode 101.
• the anodic oxidation electrode 5 has a configuration in which a plurality of anodic oxidation electrode portions (not shown) are mutually connected at one end. The other end is covered by a connection 8 for applying a signal from the external circuit to the TFT element.
• the anodic oxidation electrode 5 is used as an electrode when the gate insulating film 102 is formed on the surface of the gate electrode portion 101 by anodizing treatment.
• a part of the anodic oxidation electrode 5 is provided between the gate electrode 101 and the display electrode 7 in FIG.
• the etching removal portion 121 which is a region other than the display electrode 7, is removed.
• a gate insulating film 10 made of a tantalum oxide (a205) film formed by anodizing the tantalum film is formed. Provide two.
• a semiconductor layer 103 made of amorphous silicon (a-S i) is provided around the gate electrode 101. Further, a semiconductor layer 104 containing phosphorus (P) as impurity ions is provided on the semiconductor layer 103, and a source electrode 104 is provided on the semiconductor layer 104 containing impurity ions.
• Source electrode 105 and data electrode 106 are provided by molybdenum (Mo).
• Mo molybdenum
• the semiconductor layer 104 containing impurity ions is provided at the overlapping portion of the source electrode 10 5, the drain electrode 1 0 6 and the semiconductor layer 1 0 3. Also, the source electrode 105 is connected to the data electrode 81 connected to the external circuit.
• the gate electrode 1 0 1 is a metal film (tantalum) 2 and an anodic oxide film (tantalum oxide) 3, and the semiconductor layer 1 is formed thereon A metal film (molybdenum) of a semiconductor layer 104 containing 0 3 and impurity ions and a source electrode 105 is provided.
• the metal film of the gate electrode 1 0 1 and the gold of the source electrode 1 0 5 An electrical short circuit can be prevented by providing a multilayer insulating film or a semiconductor layer 103 between the metal films.
• the display electrode 7 is provided on the overlapping portion 122 of the anodizing electrode 5 and the substrate 1.
• connection electrode .8 made of a transparent conductive film is provided on the anodic oxidation electrode 5 made of tantalum for applying a signal from the external circuit to the non-linear resistance element.
• tantalum has a frame shape.
• the transparent conductive film covers the frame-like tantalum and has a square shape.
• the frame-like tantalum can make the position clearer than the transparent conductive film, so that the alignment accuracy is improved. Furthermore, by providing the transparent conductive film inside and outside the frame-like tantalum, the connection state of the external circuit and the connection electrode 8 can be confirmed through the transparent conductive film.
• each of the display electrode 7 and the connection electrode 8 is formed of a transparent conductive film, for example, an indium tin oxide (I T O) film.
• I T O indium tin oxide
• the etching removal portion 12 1 located between the display electrode 7 and the gate electrode 1 0 1 is etched away by the etching method, and the electrode 5 for anodic oxidation is It becomes the gate electrode 1 0 1 and separates from the overlapping portion 1 2 2 at the bottom of the display electrode 7.
• the width of the anodizing electrode 5 is the width W 2 as the gate electrode 101.
• the width of the anodizing electrode 5 is set to W 1, and the width is made wider than the width (W 2) of the gate electrode 101 and is extended to the lower part of the display electrode 7. Further, the adjacent display electrodes 7 are also connected by the anodic oxidation electrode 5.
• the gate electrode 1 0 1 and the display electrode 7 are separated into overlapping portions 1 2 2 at the bottom. Furthermore, the display electrode 7 becomes isolated.
• the anodic oxidation electrode can be used during anodic oxidation.
• the width (W 1) of the anodizing electrode 5 is made wide, when there is a break in the width (W 2) of the gate electrode 101, the display electrode 7 and the gate electrode Breakage of the gate electrode 101 can be prevented by utilizing a part of the anodizing electrode 5 between the electrodes 101.
• FIGS. 41 to 44 are sectional views showing a method of manufacturing the active substrate of the liquid crystal display according to the fourteenth embodiment in order of steps.
• a tantalum (T a) film is sputtered to a thickness of 200 nm as a metal film on the entire surface of the first substrate 1 which is an absorptive substrate made of glass shown in FIG. 41. Formed by
• a photosensitive resin (not shown) is formed on the entire surface of the tantalum film by a spin coating method, exposure and development processing is performed using a predetermined hot mask, and a photosensitive resin is patterned, and then This patterned photosensitive resin is used as an etching mask to etch a tantalum film, and a pattern of an anodic oxidation electrode 5 and a goot electrode 1 0 1 connected to the anodic oxidation electrode 5 are formed by a hot etching process.
• the tantalum film is etched using an RIE apparatus.
• the etching conditions use a mixed gas of sulfur hexafluoride (SF 6) and oxygen (O 2) as an etching gas.
• the flow rate of sulfur hexafluoride is 100 to 200 seem, the oxygen flow rate is 10 to 40 sccm, the pressure is 4 to 12 X 1 O- ⁇ , and the power consumption is 0.2 to 20 Do this with 0.5 k WZ cm 2 .
• anodic oxidation electrode 5 as an anode and using an aqueous solution of 0.01 to 1.0 wt% of a citric acid solution, an aqueous solution of boric acid or an aqueous solution of phosphoric acid as an anodic oxidation solution, 60 to 70 A voltage of V is applied to anodize the tantalum film.
• an insulating film (not shown) made of a tantalum oxide film (T a 2 O 5) is formed on the surface of the side wall and the top surface of the gate electrode 101 and the electrode 5 for anodic oxidation. ) With a thickness of 120 to 130 nm.
• an amorphous silicon (a-Si) film is formed over the entire surface to a thickness of 70 nm as a semiconductor layer 103 using a plasma CVD method.
• a semiconductor layer 104 (n-a-S i) containing phosphorus (P) as impurity ions is formed on the entire surface by 20 nm using a plasma CVD method ⁇ Thereafter, FIG. As shown in FIG. 6, the semiconductor layers 103 and 104 are etched to form a pattern on the periphery of the gate electrode 101 and the portion of the data electrode 81.
• the etching of the amorphous silicon film is performed using an RIE apparatus.
• the etching conditions use a mixed gas of carbon tetrafluoride (CF 4) and oxygen (O 2) as an etching gas. Then tetrafluoride flow amount 1 0 0 ⁇ 2 00 sccm of a carbon, oxygen flow rate is 1 0 to 4 0 seem, the pressure is set to 4 ⁇ 1 2 X 1 0- 2 torr, further use electric mosquito 0.2 It is done with 0.5 k WZ cm 2 .
• CF 4 carbon tetrafluoride
• O 2 oxygen
• a molybdenum den- sion film (Mo) is formed over the entire surface to a film thickness of 200 nm using a sputtering method. Thereafter, a photosensitive resin (not shown) is formed on the molybdenum film.
• the molybdenum film is etched to simultaneously pattern the source electrode 105 and the data electrode 8 1 connected to the drain electrode 106 and the source electrode 105.
• the molybdenum film is etched by wet etching using an etchant of phosphoric acid (H 3 PO 4 ), nitric acid (H NO 3 ) and acetic acid ( ⁇ , 001).
• the etchant solution temperature is set at 25 "to 26".
• the photosensitive resin is used as a mask for etching to etch the semiconductor layer 104 containing impurity ions.
• the etching is performed using a RIE device, and the etching conditions are set such that deterioration of the underlying semiconductor layer 103 does not occur.
• a mixture of carbon tetrafluoride (CF 4 ) and oxygen (02) as an etching gas Use mixed gas.
• an indium tin oxide (I T 0) film is formed on the entire surface as a transparent conductive film with a film thickness of 1 O O n m using a sputtering method. Then, form photosensitive resin (not shown) on the indium tin oxide film.
• the indium tin oxide film is etched to be connected to the drain electrode 106, and the display electrode 7 is patterned on the overlapping portion 122 which is a part of the anodizing electrode 5. Further, an input portion (not shown) connected to the connection electrode 8 and the data electrode 8 1 is formed on the anodic oxidation electrode 5 connected to the gate electrode 101.
• This indium tin oxide is etched by wet etching using an aqueous etchant of bromine (H B r). At this time, set the etching liquid temperature at 25 to 30 * 0.
• the etching removal portion 1 21 between the overlapping portion 1 22 of the inner display electrode 7 of the anodic oxidation electrode 5 and the gate electrode 1 1 1 or the display electrode 7 is displayed.
• a photosensitive resin 1 2 5 is formed to cover the periphery of the data electrode 8 1 and the gate electrode portion 1 0 1.
• the etching removal portion 1 2 1 is exposed from the display electrode 7 made of the photosensitive resin 1 2 5 and the indium tin oxide film, so the photosensitive resin 1 2 5 and the display electrode 7 is used as a mask for etching, and the etching removal portion 1 2 1 is removed by an etching process using RI ⁇ equipment.
• This etching condition is sulfur hexafluoride (SF) as an etching gas.
• the anodizing electrode 5 is overlapped with the gate electrode 10 1 and the lower portion of the display electrode 7. It can be separated into 1 2 2.
• the width (W 1) of the anodic oxidation electrode can be increased at the anodic oxidation, and a uniform anodic oxide film can be formed in a short time.
• the display electrode 7 and the gate electrode 10 can be formed if there is a break in the width W 2 of the gate electrode 101. Breakage of the gate electrode 10 1 can be prevented by utilizing a part of the anodizing electrode 5 between 1.
• indium oxide In2O3
• tin oxide SnO2 Oxides such as zinc oxide (Z n O) may be used.
• tantalum as the material for the anodic oxidation electrode 5
• aluminum or tantalum is a metal containing carbon, silicon, niobium, nitrogen, or phosphorus in aluminum.
• a membrane may be used.
• the upper electrode and the display electrode are made of different materials. It may be provided.
• chromium titanium, tungsten, titanium silicide, tungsten silicide or a chromium film containing nitrogen can also be used.
• the present invention relates to a liquid crystal display device widely used in various electronic devices, and particularly to a liquid crystal display device using as a switching element a nonlinear resistive element such as TFD or TFT which can be finely processed and is effective for cost reduction. It is possible to uniformly form the non-linear resistance layer by anodizing treatment in a short time, to prevent the subsequent occurrence of breakage and to facilitate inspection.
• a nonlinear resistive element such as TFD or TFT
• the remaining part after using the anodic oxidation electrode was effectively used to form a connection electrode with an external circuit, etc., to be used as a light shielding part, or to cause a defect in the electrode. It can be used for repairing the case.

Family

ID=

Similar Documents