WO1990010311A1 - Thyristor commande par un transistor mos a effet de champ - Google Patents

Thyristor commande par un transistor mos a effet de champ Download PDF

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Publication number
WO1990010311A1
WO1990010311A1 PCT/SE1990/000123 SE9000123W WO9010311A1 WO 1990010311 A1 WO1990010311 A1 WO 1990010311A1 SE 9000123 W SE9000123 W SE 9000123W WO 9010311 A1 WO9010311 A1 WO 9010311A1
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Prior art keywords
thyristor
turn
module
transistor
field effect
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PCT/SE1990/000123
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English (en)
Inventor
Per Svedberg
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Asea Brown Boveri Ab
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Publication of WO1990010311A1 publication Critical patent/WO1990010311A1/fr

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    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42308—Gate electrodes for thyristors
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    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
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    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
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    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect
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    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect
    • H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78612—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/78654—Monocrystalline silicon transistors
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H01L29/8086—Thin film JFET's

Definitions

  • the present invention relates to an MOS field effect transistor controlled thyristor, which comprises
  • thyristor modules each one having at least one base region and an emitter region contiguous to the base region, which form between them an emitter junction, and having at least one MOS transistor integrated with the thyristor module for controllable shunting of the emitter junction for turn-off of the thyristor module,
  • a thyristor is known, with which a field effect transistor is integrated for turn-off of the thyristor (or for blocking of its ignition) .
  • the field effect transistor When the field effect transistor is controlled to its conducting state, it bridges one emitter junction of the thyristor, which causes the thyristor to become turned off (or its ignition to become blocked) .
  • thyristors of the above kind a large total area of the field effect transistor or the field effect transistors is required in order for these to achieve an efficient turn-off. It is possible to arrange one single field effect transistor, which may be finely-branched or formed in another suitable pattern, or a plurality of separate field effect transistors, the control electrodes of which are connected to the common turn-off control connection. In the manufacture of such thyristors, problems arise with respect to obtaining a sufficient yield in the manufacturing process. The insulation layer between the control electrodes of the field effect transistors and the semiconductor substrate is very thin, and for that reason it is difficult completely to avoid faults in this insulation.
  • Such a fault may cause the control electrodes of the field effect transistor to become short-circuited to the semiconductor substrate at the site of the fault.
  • One single such defect is sufficient to render impossible the control of all field effect transistors included in the thyristor. If these field effect transistors are of depletion type, i.e. conducting in the absence of control voltage, they can never be controlled to non-conducting state, thus rendering impossible turn-on of the thyristor. If the transistors are of enhancement type, i.e. normally non-conducting, they cannot be controlled to conducting state, thus rendering impossible turn-off of the thyristor.
  • One single short circuit of the kind described above thus results in the entire component becoming defective and having to be rejected, which makes it difficult or impossible to obtain a satisfactory yield during the manufacture.
  • the invention aims to provide a design of a thyristor of the kind mentioned in the introductory part of the description, which makes possible a considerable increase of the yield during the manufacture.
  • a thyristor according to the invention can be formed with a plurality, preferably a large number, of separate thyristor modules, each one having a base region, one or more emitter regions, and one or more field effect transistors for turn- off of the thyristor module.
  • the field effect transistors are of depletion type and the control electrodes of the field effect transistors of each module are connected, by way of a current-limiting device, to a common turn-off control connection.
  • the transistors are of depletion type, they are conducting in the absence of a control signal. Therefore, a short circuit of the field effect transistor control electrodes in a module means that the thyristor module can never be turned on. The module will remain inactive and will not influence the function of the other modules.
  • the current-limiting device which connects the transistor control electrodes of the defective module to the common turn-off control connection will, with a suitable design, limit the current flowing from the control electrode connection to the transistor control electrodes of the module to such an extent that the function of the other thyristor modules is not disturbed.
  • a certain number of short circuits between control electrode and substrate may be tolerated without any deterioration of the function of the thyristor other than a certain loss of total thyristor area.
  • the current-limiting device may, for example, consist of a resistance integrated with the thyristor, or of a diode- connected field effect transistor integrated with the thyristor.
  • turn-on current from the common turn-on control connection can be supplied to each module via a field effect transistor integrated with the module.
  • This field effect transistor is then controlled in dependence on the voltage on the control electrodes of the turn-off transistors in such a way that the supply of turn-on current to a defective thyristor module is blocked, the total need of turn-on current thus being reduced.
  • the field effect transistors are applied on top of insulating layers applied on the substrate. In this way an undesired influence between the thyristors and the field effect transistors is avoided and a higher degree of packing is made possible.
  • Figure 1 shows in the form of an electric circuit diagram the construction of a thyristor module in a thyristor according to one embodiment of the invention.
  • Figure 2 shows schematically in the form of a section through a semiconductor substrate the construction of a thyristor module according to Figure 1.
  • Figure 3 shows in the form of a circuit diagram in more detail the construction of a thyristor module.
  • Figure 4a shows how the units included in a thyristor module may be arranged on the surface of the substrate.
  • Figure 4b shows in more detail part of the surface of the thyristor module.
  • Figure 4c shows the section A-A in Figure 4b, and Figure 4d shows the section B- B.
  • Figure 4e shows the section C-C in Figure 4a.
  • Figures 5a and 5b show two embodiments in which the field effect transistors are separated from the substrate by an electrically insulating layer.
  • Figure 6 shows how the current-limiting device may be made from a diode-connected field effect transistor. DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • FIG. 1 shows a thyristor module in an embodiment of a thyristor according to the invention.
  • the thyristor has four connections common to all thyristor modules, namely a cathode connection K, a turn-off control connection SS, a turn-on control connection TS and an anode connection A.
  • the thyristor TY of the module shown lies connected between the cathode and the anode connection.
  • the module has an MOS field effect transistor FN of depletion type, connected between one of the emitter layers (the n-emitter) of the thyristor and its base layer (the p-base) contiguous to the emitter.
  • the control electrode of the transistor is connected, by way of a current-limiting device in the form of a resistor R, to the common turn-off control connection SS.
  • the transistor is of n-type. It is thus normally conducting and may be made non-conducting by a negative control signal on the control electrode.
  • Turn-on current is supplied to the turn-on layer (the p-base) of the thyristor from the common turn-on control connection TS via an MOS transistor FP.
  • This transistor is of p-type and of enhancement type. Thus, the transistor is normally non ⁇ conducting and may be made conducting with the aid of a negative control signal.
  • Its control electrode is connected to the control electrode of the transistor FN.
  • the thyristor according to the invention consists of a large number of modules, which are designed in integrated circuit technique on one and the same semiconductor body and which each have the embodiment shown in Figure 1. All thyristor modules are parallel-connected to the anode and cathode connections A and K which are common to the modules. In similar manner, the connection lines SS for the turn-off signal and TS for the turn-on signal are common to all the modules included in the thyristor.
  • the transistors FN in the thyristor modules are normally conducting, the emitter of the thyristor TY being short- circuited.
  • the transistor FP is normally non-conducting.
  • the common turn-off control connection SS is supplied with a negative control signal, which makes the transistor FN conducting and cancels the short circuiting of the thyristor, and which further makes the transistor FP conducting, thus enabling a turn-on signal, which is supplied to the thyristor via the common turn-on connection TS, to be supplied to the p-base of the thyristor module TY.
  • the negative control signal on the turn-off control connection SS is removed, causing the transistors FN to change into conducting state and to short-circuit the thyristor modules, the thyristors TY of which are then turned off.
  • a defect of the kind now mentioned in a thyristor module does not - as in prior art thyristors - result in the entire thyristor having to be rejected; it only causes a dropout of the defective module. Since the number of thyristor modules in a thyristor is normally large, the function of the thyristor is influenced only to a negligible extent by the dropout of a thyristor module, or of a small number of thyristor modules.
  • the resistance of the resistor R should, in a typical thyristor according to the invention, be at least 10 kohm, for example 50 kohm.
  • the control electrode of the transistor FN has a certain capacitance (C in Fig. 1) to the semiconductor substrate. Together with the resistor this capacitance has a time constant which provides a delay of the voltage on the control electrode in relation to the signal which is supplied to the common turn-off control connection SS.
  • the capacitance mentioned can be kept down by making the modules sufficiently small.
  • each module may be given the size 0.25 x 0.25 mm, which provides a capacitance of the order of magnitude of 2 pF and - with a resistance of 50 kohm - a time constant of 0.1 ⁇ s, which in the normal case is sufficient so as not to have art adverse effect on the function of the thyristor.
  • the consumption of turn-on current may be kept down, if desired, by supplying turn-on current only to certain, selected thyristor modules, the turn-on from these being allowed to spread to the other modules. This can be achieved, for example, by omitting, in those modules which are not to be supplied with turn-on current, the connection between the transistor FP and the turn-on control connection TS, or by omitting the connection between the control electrodes of the two transistors FN and FP.
  • FIG. 2 shows schematically a section through a thyristor module in a thyristor according to the invention.
  • the transistor FP has been omitted.
  • the thyristor is made in a silicon wafer with an anode contact A, a p-emitter layer 1 and an n-base layer 2, which are common to all thyristor modules.
  • the p-base of the thyristor TY consists of the layer 3 and its n-emitter of the layer .
  • Its cathode contact 5a is connected to the common cathode connection K.
  • the transistor FN is made in a p-pocket 6.
  • Its source region 8 is connected to the p-base 3 of the thyristor by way of contacts 11a and 5b.
  • Its drain region 7 is connected, via a metal contact lib, to the common cathode connection K.
  • the drain region 7 is short- circuited to the p-pocket 6 via the metal contact lib and the heavily p-doped region 6a, which prevents the formation of harmful parasitic thyristors.
  • the channel region 9 of the transistor is n-conducting.
  • Its control electrode 10, for example formed of polycrystalline highly doped silicon, is connected to the turn-off control connection SS by way of the resistor R.
  • the resistor can suitably be formed as an elongated thin layer of polycrystalline silicon with a suitable doping, which is arranged on the substrate and separated therefrom by an insulating layer.
  • the p-pocket 6 is preferably made with such a high doping and hence such a low lateral resistance that a hole current emanating from the anode side does not cause the source region 8 of the transistor to function as a parasitic thyristor.
  • the transistor is suitably made with a more weakly p-doped region 6b below the actual channel region.
  • the total area of the MOS transistor part 6-11 is suitably made so large that a transistor is given a low resistance in its conducting state.
  • the hole current injected from the p- emitter layer 1 passes to the p-pocket 6 of the MOS transistor part as well as to the p-base layer 3 of the thyristor part.
  • Figure 3 shows in more detail, in the form of a circuit diagram, the construction of a thyristor module in a thyristor according to the invention.
  • the n-emitter layer 4 of the thyristor part is divided into several separate layers 4a, 4b, etc., to make possible more efficient turn- off. These form separate emitter junctions with the p-base layer 3 which is common to the module. Further, the figure shows symbolically the n-base layer 2 and the p-base layer 1, which are common to all modules.
  • the transistor FN in Figure 1 is shown consisting of a plurality of parts FN1, FN2, FN3, etc., the control electrodes of which, for example FNS1, are connected to the turn-off control connection SS via the resistor R as well as to the control electrode FPS of the transistor FP.
  • the transistors FN1, etc. may be separate or may be joined to each other into a coherent pattern. This latter embodiment will be described in the following.
  • Figure 4a shows an example of how the different parts of a thyristor module may be arranged on the surface of the substrate.
  • the transistor FP and the emitter layers 4a-4e of the thyristor are arranged.
  • the emitter layers are connected to one another with the aid of the metal contact 5.
  • On either side of the centre line two identical field effect transistor parts are formed. These are made in a coherent check pattern.
  • the control electrodes of the thyristors form the check pattern designated 15c, and the same pattern is formed by the underlying channel regions.
  • the control electrode pattern 15c is connected, with the aid of a contact 15b, to the control electrode of the transistor FP and, by way of a contact 15a, to one end of the resistor R.
  • the other end of the resistor is connected to the turn-off control connection SS which is common to the modules.
  • the resistor is formed as an elongated layer of polycrystalline silicon, arranged on top of the substrate and separated therefrom by an " insulating layer of, for example, silicon dioxide.
  • every other square are connected to each other by way of contacts 12b, 12c, etc., and to the p-base layer 3 by way of a common contact 12a.
  • the other squares are connected to one another by way of contacts 13a, 13b, etc., and to the contact 5 by way of connections 14a, 14b, etc.
  • the field effect transistor part lying to the left of the centre line in the figure is built up in exactly the same manner as the one just described.
  • Figure 4b shows in more detail part of the surface of the thyristor module.
  • Figure 4c shows the section A-A marked in Figure 4b and
  • Figure 4d shows the section B-B marked in Figure 4b.
  • Figure 4e shows the section C-C marked in Figure 4a.
  • the contact 5 consists of a metal layer which is arranged on top of the oxide layer and which, via holes 20, 21 therein, makes contact with an underlying emitter layer, for example 4a.
  • the contact 12a consists of another metal layer, arranged on the oxide layer and applied in contact with the p-base 3 through holes 24, 25, 26, etc., in the oxide layer.
  • a highly p-doped region 30 provides an efficient contacting.
  • the control pattern of the field effect transistor consists of a coherent check pattern of polycrystalline silicon 35, separated from the substrate by a thin oxide layer.
  • the squares 36, 38 constitute the n + - conducting source regions of the field effect transistors.
  • the source regions are arranged in a p-pocket 6, which is provided at its edge with a more highly p-doped region 31.
  • the n-conducting channel regions 34 of the field effect transistors are arranged and, below these, weakly p-conducting regions 33.
  • an additional silicon dioxide layer 41 is arranged and, on top of this, a coherent, additional metal layer 27, which constitutes the common cathode connection for all the modules.
  • Figure 4d shows, in the lefthand part, how the contact 5 is contacted by the cathode contact 27 by way of a hole 23 in the oxide layer 41.
  • the figure shows the n + -conducting layers 48, 49, etc., which constitute the drain regions of the field effect transistors.
  • p + -doped regions 43, 50 are arranged.
  • Nearest the surface of the substrate, low- resistant regions 44, 51 of, for example, platinum suicide are arranged, which provide an efficient low-resistant connection.
  • the metal contact 13a is arranged on the oxide layer 40 and makes contact, through holes 45, 52 therein, with the layers 44 and 51 and hence with the drain regions.
  • the contact 13a is, in turn, contacted through holes 46, 47 by the cathode layer 27.
  • Figure 4e shows the section C-C in Figure 4a. It shows the contact 5, which via holes 20, 21, etc., makes contact with the emitter parts 4a, 4b, etc., and which, in turn, through hole 23 is contacted by the common cathode contact 27.
  • the transistor FP is formed by the p- pocket 3, which surrounds a p + -conducting region 62. The latter is connected - through a metal contact 61, which at the edge of the module is connected to a p-conducting layer 60 - to the common turn-on control connection TS.
  • the control electrode of the transistor consists of a polycrystalline silicon layer 63, which is connected by way of a metal contact 64 to the control pattern 15b, 15c (Fig. 4a) .
  • Figure 5a and Figure 5b show alternative embodiments of the invention, in which the field effect transistors for short- circuiting the emitter junctions of the thyristors are arranged on electrically insulating layers.
  • Figure 5a shows the common n-base layer 2 and the p-pocket 3, in which the separate emitter parts 4a and 4b are arranged. These are provided with metal contacts 70, 71, which are contacted by the common cathode contact 27. Between the two emitter parts 4a and 4b, a p-region 72 is arranged, the metal contact 73 of which is contacted by the cathode contact 27. Between this p-region and each one of the emitter parts, an insulating layer 75 is applied.
  • the n + -conducting regions 76 and 77 are arranged, which constitute the source and drain regions of the field effect transistor. Between the source and drain regions a more weakly n-doped channel region 78 is arranged, above which the control electrode 79 of the field effect transistor is applied.
  • the source region 77 of the field effect transistor is connected to the p-base 3 with the aid of a metal contact 80, and the drain region 76 of the transistor is contacted by the contact 73 and is thus connected to the common cathode contact 27.
  • the transistor is normally conducting and thus short-circuits the emitter junctions of the thyristors. With the aid of a negative control signal on the control electrode 79, the transistor can be made non-conducting, whereupon the thyristor can be turned on and carry current.
  • Figure 5b shows a variation of the embodiment shown in Figure 5a.
  • an additional field effect transistor 76a, 77a, 78a, 79a is arranged on an insulation layer 75.
  • This transistor has the same layout and function as the field effect transistor described with reference to Figure 5a and provides an additional short- circut path directly between the cathode contact 70 and the contact 80 of the p-base.
  • the field effect transistors separated from the substrate by electrically insulating layers as shown in Figures 5a and 5b, a greater packing density is made possible. Further, greater freedom is obtained when designing the field effect transistors, and an undesired interaction between the field effect transistors and the thyristor parts is efficiently prevented.
  • the area ratio A1/A2 is chosen in dependence on the application in question. The distance d is chosen so that a basic short circuit of a suitable magnitude is obtained (via the weakly p-doped layer 74) .
  • FIG 6 shows schematically how, as an alternative to the resistor R in Figure 1, a diode-connected field effect transistor FL of depletion type can be used for limiting the current flowing to the control electrode of the field effect transistor FN.
  • the control electrode FLS of the transistor FL is connected to that electrode of the transistor which is connected to the control connection SS.
  • the conducting channel of the transistor will be rapidly throttled, and the current through the transistor is then limited to an approximately constant value.
  • non-defective thyristor modules may receive a higher control current than what is the case with the resistor described above, and in this way a faster function may be obtained.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thyristors (AREA)
  • Electronic Switches (AREA)

Abstract

Un thyristor commandé par un transistor MOS à effet de champ se compose d'un grand nombre de modules de thyristor identiques mutuellement, présentant chacun une région de base (3) ainsi qu'une région émettrice (4) contiguë à ladite région de base, formant entre elles une jonction émettrice. Chaque module comporte un transistor MOS (7, 8, 9, 10) intégré au module de thyristor, afin de monter en dérivation de manière régulée la jonction émettrice, pour mettre hors circuit le module de thyristor. Le transistor MOS est du type à déplétion, et son électrode de commande (10) est connectée, au moyen d'un dispositif (R) de limitation de courant séparé du module, à une connexion (SS) de commande de mise hors circuit, commune à tous les modules du thyristor.
PCT/SE1990/000123 1989-02-23 1990-02-22 Thyristor commande par un transistor mos a effet de champ WO1990010311A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE8900617A SE463235B (sv) 1989-02-23 1989-02-23 Mos-faelteffekttransistorstyrd tyristor
SE8900617-5 1989-02-23

Publications (1)

Publication Number Publication Date
WO1990010311A1 true WO1990010311A1 (fr) 1990-09-07

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PCT/SE1990/000122 WO1990010310A1 (fr) 1989-02-23 1990-02-22 Thyristor
PCT/SE1990/000123 WO1990010311A1 (fr) 1989-02-23 1990-02-22 Thyristor commande par un transistor mos a effet de champ

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PCT/SE1990/000122 WO1990010310A1 (fr) 1989-02-23 1990-02-22 Thyristor

Country Status (4)

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EP (1) EP0486496A1 (fr)
JP (1) JPH04503735A (fr)
SE (1) SE463235B (fr)
WO (2) WO1990010310A1 (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992012541A1 (fr) * 1991-01-09 1992-07-23 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Structure integree d'un interrupteur de puissance
EP0522712A2 (fr) * 1991-06-10 1993-01-13 Kabushiki Kaisha Toshiba Thyristor à grille isolée
WO1993002477A1 (fr) * 1991-07-17 1993-02-04 Asea Brown Boveri Ab Systeme de thyristor blocable
FR2688631A1 (fr) * 1992-03-16 1993-09-17 Mitsubishi Electric Corp Dispositif semi-conducteur ayant un courant maximum controlable important et procede pour sa fabrication.
US5581295A (en) * 1992-11-27 1996-12-03 Eastman Kodak Company Method and apparatus for resequencing image data for a printhead
WO2008024636A2 (fr) * 2006-08-25 2008-02-28 Hvvi Semiconductors, Inc. Appareil de protection contre les contraintes électriques et procédé de fabrication associé

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5831289A (en) * 1997-10-06 1998-11-03 Northrop Grumman Corporation Silicon carbide gate turn-off thyristor arrangement

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4224634A (en) * 1975-06-19 1980-09-23 Asea Aktiebolag Externally controlled semiconductor devices with integral thyristor and bridging FET components

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3018468A1 (de) * 1980-05-14 1981-11-19 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbaren emitterkurzschluessen und verfahren zu seinem betrieb
DE3138763A1 (de) * 1981-09-29 1983-06-30 Siemens AG, 1000 Berlin und 8000 München Lichtzuendbarer thyristor mit steuerbaren emitter-kurzschluessen und zuendverstaerkung
DE3370248D1 (en) * 1982-10-04 1987-04-16 Gen Electric Thyristor with turn-off capability
US4760432A (en) * 1985-11-04 1988-07-26 Siemens Aktiengesellschaft Thyristor having controllable emitter-base shorts
EP0226021A1 (fr) * 1985-12-12 1987-06-24 BBC Brown Boveri AG Thyristor à court circuit d'émetteur commutable

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4224634A (en) * 1975-06-19 1980-09-23 Asea Aktiebolag Externally controlled semiconductor devices with integral thyristor and bridging FET components

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992012541A1 (fr) * 1991-01-09 1992-07-23 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Structure integree d'un interrupteur de puissance
US5413313A (en) * 1991-01-09 1995-05-09 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Integrated power switch structure having a vertical thyristor controlled by a lateral MOS transistor
EP0522712A2 (fr) * 1991-06-10 1993-01-13 Kabushiki Kaisha Toshiba Thyristor à grille isolée
EP0522712A3 (en) * 1991-06-10 1993-03-10 Kabushiki Kaisha Toshiba Thyristor with insulated gate
US5315134A (en) * 1991-06-10 1994-05-24 Kabushiki Kaisha Toshiba Thyristor with insulated gate
WO1993002477A1 (fr) * 1991-07-17 1993-02-04 Asea Brown Boveri Ab Systeme de thyristor blocable
FR2688631A1 (fr) * 1992-03-16 1993-09-17 Mitsubishi Electric Corp Dispositif semi-conducteur ayant un courant maximum controlable important et procede pour sa fabrication.
US5389801A (en) * 1992-03-16 1995-02-14 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having increased current capacity
US5581295A (en) * 1992-11-27 1996-12-03 Eastman Kodak Company Method and apparatus for resequencing image data for a printhead
WO2008024636A2 (fr) * 2006-08-25 2008-02-28 Hvvi Semiconductors, Inc. Appareil de protection contre les contraintes électriques et procédé de fabrication associé
WO2008024636A3 (fr) * 2006-08-25 2008-08-14 Hvvi Semiconductors Inc Appareil de protection contre les contraintes électriques et procédé de fabrication associé

Also Published As

Publication number Publication date
JPH04503735A (ja) 1992-07-02
WO1990010310A1 (fr) 1990-09-07
SE463235B (sv) 1990-10-22
SE8900617L (sv) 1990-08-24
EP0486496A1 (fr) 1992-05-27
SE8900617D0 (sv) 1989-02-22

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