WO1979000736A1 - Transistors - Google Patents

Transistors Download PDF

Info

Publication number
WO1979000736A1
WO1979000736A1 PCT/JP1979/000059 JP7900059W WO7900736A1 WO 1979000736 A1 WO1979000736 A1 WO 1979000736A1 JP 7900059 W JP7900059 W JP 7900059W WO 7900736 A1 WO7900736 A1 WO 7900736A1
Authority
WO
WIPO (PCT)
Prior art keywords
regions
emitter
resistor
region
wiring electrode
Prior art date
Application number
PCT/JP1979/000059
Other languages
English (en)
French (fr)
Inventor
Y Nawata
K Takahashi
K Ono
Y Kanno
Original Assignee
Fujitsu Ltd
Y Nawata
K Takahashi
K Ono
Y Kanno
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd, Y Nawata, K Takahashi, K Ono, Y Kanno filed Critical Fujitsu Ltd
Priority to DE2940975T priority Critical patent/DE2940975C2/de
Publication of WO1979000736A1 publication Critical patent/WO1979000736A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H01L29/0813—Non-interconnected multi-emitter structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41708—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7302—Bipolar junction transistors structurally associated with other devices
    • H01L29/7304—Bipolar junction transistors structurally associated with other devices the device being a resistive element, e.g. ballasting resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
PCT/JP1979/000059 1978-03-10 1979-03-09 Transistors WO1979000736A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE2940975T DE2940975C2 (de) 1978-03-10 1979-03-09 Transistor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP78/27255 1978-03-10
JP2725578A JPS54120587A (en) 1978-03-10 1978-03-10 Transistor

Publications (1)

Publication Number Publication Date
WO1979000736A1 true WO1979000736A1 (en) 1979-10-04

Family

ID=12215958

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP1979/000059 WO1979000736A1 (en) 1978-03-10 1979-03-09 Transistors

Country Status (6)

Country Link
US (1) US4835588A (ja)
JP (1) JPS54120587A (ja)
DE (1) DE2940975C2 (ja)
GB (1) GB2037483B (ja)
NL (1) NL7901855A (ja)
WO (1) WO1979000736A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0019355A1 (en) * 1979-04-11 1980-11-26 Fujitsu Limited Transistor structure
EP0024923A1 (en) * 1979-08-29 1981-03-11 Fujitsu Limited Transistor structure

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5818964A (ja) * 1981-07-28 1983-02-03 Fujitsu Ltd 半導体装置
JPS62104066A (ja) * 1985-10-31 1987-05-14 Toshiba Corp 半導体保護装置
US5204735A (en) * 1988-04-21 1993-04-20 Kabushiki Kaisha Toshiba High-frequency semiconductor device having emitter stabilizing resistor and method of manufacturing the same
US5262666A (en) * 1989-05-15 1993-11-16 Nippondenso Co., Ltd. Semiconductor device with a nickel alloy protective resistor
US5736755A (en) * 1992-11-09 1998-04-07 Delco Electronics Corporation Vertical PNP power device with different ballastic resistant vertical PNP transistors
US5374844A (en) * 1993-03-25 1994-12-20 Micrel, Inc. Bipolar transistor structure using ballast resistor
AU2659995A (en) * 1994-06-09 1996-01-04 Chipscale, Inc. Resistor fabrication
US5488252A (en) * 1994-08-16 1996-01-30 Telefonaktiebolaget L M Erricsson Layout for radio frequency power transistors
GB0318146D0 (en) * 2003-08-02 2003-09-03 Zetex Plc Bipolar transistor with a low saturation voltage
USD848384S1 (en) * 2017-08-17 2019-05-14 Epistar Corporation Transistor

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3519898A (en) * 1967-01-31 1970-07-07 Nippon Electric Co High power semiconductor device having a plurality of emitter regions
US3740621A (en) * 1971-08-30 1973-06-19 Rca Corp Transistor employing variable resistance ballasting means dependent on the magnitude of the emitter current
JPS5263073A (en) * 1975-11-19 1977-05-25 Mitsubishi Electric Corp Semiconductor device for electric power
JPS53122168U (ja) * 1977-03-04 1978-09-28

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3358197A (en) * 1963-05-22 1967-12-12 Itt Semiconductor device
US3504239A (en) * 1964-01-31 1970-03-31 Rca Corp Transistor with distributed resistor between emitter lead and emitter region
US3427511A (en) * 1965-03-17 1969-02-11 Rca Corp High frequency transistor structure with two-conductivity emitters
JPS5353979A (en) * 1976-10-27 1978-05-16 Fujitsu Ltd Transistor
JPS5397379A (en) * 1977-02-07 1978-08-25 Fujitsu Ltd Transistor
JPS53122168A (en) * 1977-03-30 1978-10-25 Geimuueru Mekanikaru Inc Heat exchanging means
JPS6046814B2 (ja) * 1977-10-06 1985-10-18 ニチコン株式会社 電解コンデンサの駆動用電解液
JPS5456571A (en) * 1977-10-13 1979-05-07 Matsushita Electric Ind Co Ltd Method of producing cabinet
JPS54140875A (en) * 1978-04-24 1979-11-01 Nec Corp Semiconductor device
JPH05263073A (ja) * 1992-03-17 1993-10-12 Sumitomo Chem Co Ltd 有機エレクトロルミネッセンス素子
JPH05134209A (ja) * 1991-11-13 1993-05-28 Canon Inc ヘツドアツプデイスプレイ装置及びそれを用いた車両

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3519898A (en) * 1967-01-31 1970-07-07 Nippon Electric Co High power semiconductor device having a plurality of emitter regions
US3740621A (en) * 1971-08-30 1973-06-19 Rca Corp Transistor employing variable resistance ballasting means dependent on the magnitude of the emitter current
JPS5263073A (en) * 1975-11-19 1977-05-25 Mitsubishi Electric Corp Semiconductor device for electric power
JPS53122168U (ja) * 1977-03-04 1978-09-28

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0019355A1 (en) * 1979-04-11 1980-11-26 Fujitsu Limited Transistor structure
EP0024923A1 (en) * 1979-08-29 1981-03-11 Fujitsu Limited Transistor structure

Also Published As

Publication number Publication date
JPS5643619B2 (ja) 1981-10-14
GB2037483A (en) 1980-07-09
GB2037483B (en) 1982-08-18
JPS54120587A (en) 1979-09-19
DE2940975T1 (ja) 1980-12-04
US4835588A (en) 1989-05-30
DE2940975C2 (de) 1986-04-10
NL7901855A (nl) 1979-09-12

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