USRE45924E1 - Electric contact and socket for electrical part - Google Patents

Electric contact and socket for electrical part Download PDF

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Publication number
USRE45924E1
USRE45924E1 US13/965,494 US200613965494A USRE45924E US RE45924 E1 USRE45924 E1 US RE45924E1 US 200613965494 A US200613965494 A US 200613965494A US RE45924 E USRE45924 E US RE45924E
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US
United States
Prior art keywords
layer
contact
outermost surface
contact portion
electrical part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related, expires
Application number
US13/965,494
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English (en)
Inventor
Takahiro Oda
Kentaro Hayakawa
Takashi MORINARI
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Enplas Corp
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Enplas Corp
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Priority to US13/965,494 priority Critical patent/USRE45924E1/en
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10—Electroplating with more than one layer of the same or of different metals
    • C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48—After-treatment of electroplated surfaces
    • C25D5/50—After-treatment of electroplated surfaces by heat-treatment
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/04—Housings; Supporting members; Arrangements of terminals
    • G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
    • G01R1/0433—Sockets for IC's or transistors
    • G01R1/0441—Details
    • G01R1/0466—Details concerning contact pieces or mechanical details, e.g. hinges or cams; Shielding
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06733—Geometry aspects
    • G01R1/06738—Geometry aspects related to tip portion
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06755—Material aspects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/02—Contact members
    • H01R13/03—Contact members characterised by the material, e.g. plating, or coating materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9265—Special properties
    • Y10S428/929—Electrical contact feature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12708—Sn-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12875—Platinum group metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12896—Ag-base component

Definitions

  • the present invention relates to an electric contact to be electrically connected to an electrical part such as semiconductor device (called “IC package”, hereinafter) and a socket for an electrical part provided with such electric contact.
  • an electrical part such as semiconductor device (called “IC package”, hereinafter) and a socket for an electrical part provided with such electric contact.
  • a contact pin provided for an IC socket as a socket for an electrical part.
  • This IC socket is disposed on a circuit board and accommodated with an IC package as an object to be inspected, and a terminal of this IC package and an electrode of the circuit board are electrically connected through the contact pin.
  • the contact pin has an outermost Au plated layer (added with extremely small amount of Co) and a base layer made of Ni.
  • the terminal of the IC package is made of Sn (tin) as main component including no lead, so-called lead-free solder. According to the contact of the contact pin and the terminal, they are connected electrically, which are then provided for a burn-in test.
  • Patent Publication 1 Japanese Patent Publication No. 2005-504962 A
  • an object of the present invention is to provide an electric contact and a socket for an electrical part capable of suppressing the increasing of the electric resistance and performing an appropriate burn-in test even if the test is carried out repeatedly.
  • the inventors of the subject application studied and found the following matters. That is, in a conventional technology, since the outermost surface layer of the contact pin is formed of an Au plating layer and the base layer is made of Ni, when the burn-in test with respect to an IC package having a lead free solder terminal is repeatedly carried out, the Au is dissolved in the terminal side, and then, the Au plating layer is vanished. Finally Ni of the base layer is exposed. Then, the Ni is oxidized in air and an oxide film having a large specific resistance is formed. As a result, it was found that the electric resistance at the contact portion of the contact pin to the terminal becomes high.
  • the inventors of the subject application considered that, in order to prevent the outermost surface layer of the electric contact side from being dissolved into the terminal side of the electrical part and to prevent Ni of the base layer from being exposed, Sn in the solder of the terminal of the electrical part is transferred to the electric contact side during the burn-in (high temperature) test, and the Sn is diffused into the outermost surface layer and hardly stored as an oxide thereof. According to this matter, even if the burn-in test is repeatedly performed, the electric resistance is not increased in an early stage.
  • the electric contact may include a base material having conductive property and an outermost layer comprised of a material into which Sn (tin) is dissolved and diffused by applying heat.
  • the electric contact may further include a base layer comprised of Ni (nickel) formed between the base material and the outermost surface.
  • the outermost surface layer may be made of Pd (palladium) and Ag (silver).
  • the Ag may have a weight larger than that of the Pd.
  • the outermost surface layer may include a Pd—Ag plating layer.
  • the outermost surface layer may be a lamination of a Pd—Ag plating layer and an Ag plating layer or a Pd plating layer.
  • the outermost surface layer may be a lamination of an Ag plating layer and a Pd plating layer.
  • the outermost surface layer may be a layer comprised of Ag and another metal.
  • the outermost surface layer may include Ag and Sn.
  • the outermost surface layer may include Ag and Sn, and a weight % of the Sn is not less than 80% with respect to the Sn.
  • a contact portion contacting at least the terminal is formed of a composite material of Ag-an oxide of metal element, into which Sn (tin) is dissolved and diffused by applying heat.
  • the composite material may be made of Ag—ZnO.
  • the Ag may have a weight % of not less than 80% with respect to the ZnO.
  • the composite material may be made of Ag—SnO 2 .
  • the Ag may have a weight % of not less than 80% with respect to the SnO 2 .
  • a contact portion contacting to at least the terminal is formed of a composite material made of Ag, a substance other than metal, into which Sn (tin) is dissolved and diffused by applying heat.
  • the composite material may be made of Ag—C.
  • the Ag may have a weight % of not less than 80% with respect to the C.
  • the inventors found the following matters. That is, in a conventional technology, since the outermost surface layer of the contact pin is formed of an Au plating layer and the base layer is made of Ni, in the repeated burn-in test to an IC package having a lead free solder terminal, the Au is dissolved into the terminal side, and then, the Au plating layer is vanished. Finally, the Ni component of the base layer is exposed.
  • the Au on the contact pin side and the Sn of the IC package terminal forms an alloy. Then, after the test, when the device is taken out, almost all part of this alloy is peeled off with the IC package terminal, and therefore, in the repetition of the burn-in test the Au plating layer on the contact pins side is made thin and, finally, Ni of the base layer is exposed.
  • the inventors of the subject application found that by making the Sn diffuse into the surface layer of the electric contact and by suppressing the peeling of the surface layer of the electric contact with the terminal of the electric part, an oxide film is hardly formed on the surface layer and the increasing of the electric resistance can be suppressed.
  • a contact portion contacting to at least the terminal is provided with a contact material into which Sn (tin) included in a solder is diffused, and the contact material has a tensile strength higher than that of the solder, and an alloy containing both the contact material and the diffused Sn has a tensile strength higher than that of the solder.
  • the contact material may be formed of a plating layer of Pd(palladium)-Ag(silver) alloy, a lamination of Ag plating layer and Pd—Ag alloy plating layer, a lamination of the Ag plating layer and the Pd plating layer, or an Ag—Sn alloy plating layer.
  • the contact material may be formed by adding an oxide or organic material to a material into which Sn contained in the solder is hardly diffused therein to thereby enable Sn contained in the solder to be diffused.
  • the contact material may be a material prepared by adding zinc oxide, carbon or tin oxide to silver.
  • a socket for an electrical part includes a socket body, an accommodation portion in which an electrical part having a terminal including Sn is accommodated, and an electric contact as described above may be disposed to the socket body so as to contact the terminal.
  • the electric contact is composed of a base material made of a material having conductivity and an outermost surface layer composed of a material in which Sn is diffused by applying heat, so that Sn in the solder of the terminal of the electrical part to which the electric contact is contacted under the burn-in test environment is transferred to the outermost surface layer and diffused therein. Accordingly, the component of the outermost surface layer is not dissolved into the terminal side of the electrical part and the base layer is not exposed, and hence, the Sn is hardly stored as an oxide on the surface of the contact portion. As a result, even in a repeated burn-in test, the increasing of the electric resistance of the contact portion of the electric contact in an early stage can be suppressed.
  • the contact portion of the electric contact is made of a composite of Ag-an oxide of metal element or a composite of Ag-a substance other than metal so that the Sn is diffused deeply inside the contact portion and is hardly stored as an oxide on the surface of the contact portion, thereby maintaining the low resistance. Therefore, even if the burn-in test is repeated, the increasing of the electric resistance of the contact portion of the electric contact in an early stage can be effectively suppressed.
  • this contact material has a tensile strength higher than that of the solder, and the tensile strength of an alloy containing both the contact material and the diffused Sn is also higher than that of the solder, so that when an electrical part is taken out, as a result, the contact portion is peeled off at a boundary portion between the contact portion of the electric contact and the solder.
  • the metal on the surface of the contact portion is not peeled off and transferred to the terminal side of the electrical part, Ni of the base layer is not exposed, and the low resistance can be maintained, so that even if the burn-in test is repeatedly carried out, the increasing of the electric resistance of the contact portion of the electric contact in an early stage can be suppressed.
  • FIG. 1 is a frame format, in an enlarged scale, of a sectional view showing a contacting portion of a contact pin according to Ag—Pd plating of a first embodiment of the present invention.
  • FIGS. 2A to 2C are views showing a probe according to the first embodiment.
  • FIGS. 3A to 3C are solder material specimens according to the first embodiment.
  • FIGS. 4A to 4D are enlarged sectional views showing a section analyzing result of a contact portion of a conventional probe.
  • FIGS. 5A to 5C are enlarged views showing a surface analyzing result of the contact portion of the conventional probe.
  • FIG. 6 is a graph representing a relationship between a cycle of the contact portion of the conventional probe and the electric resistance.
  • FIGS. 7A to 7E are sectional views, in an enlarged scale, representing a section analyzing result of a contact portion of a probe according to Ag—Pd plating of the first embodiment of the present invention.
  • FIG. 8 is a graph representing a relationship between a cycle of the contact portion of the probe according to Ag—Pd plating of the first embodiment and an electric resistance.
  • FIGS. 9A to 9E are enlarged sectional views showing a section analyzing result of a contact portion of a probe according to an ion plating of the first embodiment of the present invention.
  • FIG. 10 is a graph representing a relationship between a cycle of the contact portion of the probe according to the ion plating of the first embodiment and an electric resistance.
  • FIG. 11 is a frame format, in an enlarged scale, of a sectional view showing a contact portion of a contact pin of a modified embodiment corresponding to FIG. 1 of the present invention.
  • FIG. 12 is a frame format, in an enlarged scale, of a sectional view showing a contact portion of a contact pin of another modified embodiment corresponding to FIG. 1 of the present invention.
  • FIG. 13 is a frame format, in an enlarged scale, of a sectional view showing a contact portion of a contact pin of a further modified embodiment corresponding to FIG. 1 of the present invention.
  • FIG. 14 is a frame format, in an enlarged scale, of a sectional view showing a contact portion of a contact pin of a further modified embodiment corresponding to FIG. 1 of the present invention.
  • FIG. 15 is a frame format, in an enlarged scale, of a sectional view showing a contact portion of a contact pin of a further modified embodiment corresponding to FIG. 1 of the present invention.
  • FIG. 16 is a frame format, in an enlarged scale, of a sectional view showing a contact portion of a contact pin of a further modified embodiment corresponding to FIG. 1 of the present invention.
  • FIG. 17 is a frame format, in an enlarged scale, of a sectional view showing a contact portion of a contact pin according to Ag—Sn plating of a second embodiment of the present invention.
  • FIGS. 18A to 18D are enlarged sectional views showing a section analyzing result of a contact portion of a conventional probe.
  • FIG. 19 is a graph representing a relationship between a cycle of the contact portion of the conventional probe and an electric resistance.
  • FIGS. 20A to 20D are sectional views, in an enlarged scale, representing a section analyzing result of a contact portion of a probe according to Ag—Sn plating of a second embodiment of the present invention.
  • FIG. 21 is a graph representing a relationship between a cycle of the contact portion of the probe according to the Ag—Sn plating of the second embodiment and the electric resistance.
  • FIGS. 22A to 22C are views showing a probe for evaluation test according to a third embodiment of the present invention.
  • FIGS. 23A and 23B are views showing a solder specimen for the evaluation test according to the third embodiment.
  • FIGS. 24A to 24D are enlarged sectional views showing a section analyzing result of a contact portion of a conventional probe.
  • FIG. 25 is a graph representing a relationship between a cycle of the contact portion of the conventional probe and an electric resistance.
  • FIGS. 26A to 26D are sectional views, in an enlarged scale, representing a section analyzing result of a contact portion of a probe according to Ag—ZnO composite of the third embodiment of the present invention.
  • FIG. 27 is a graph representing a relationship between a cycle of the contact portion of the probe according to Ag—ZnO composite of the third embodiment and an electric resistance.
  • FIGS. 28A to 28C are enlarged sectional views showing a section analyzing result of a contact portion of a probe according to Ag—C composite of the third embodiment.
  • FIG. 29 is a graph representing a relationship between a cycle of the contact portion of the probe according to Ag—C composite of the third embodiment and the resistance.
  • FIGS. 30A to 30C are enlarged sectional views showing a section analyzing result of a contact portion of a probe according to Ag—C composite of the third embodiment.
  • FIG. 31 is a graph representing a relationship between a cycle of the contact portion of the probe according to Ag—SnO 2 composite of the third embodiment and the resistance.
  • FIGS. 32A to 32D are schematic sectional views showing a contact portion of the contact pin according to a fourth embodiment of the present invention.
  • FIG. 33A , 33 B, 33 C, 33 D, 33 A′, 33 B′, 33 C′, 33 D′ are schematic sectional views showing a contact portion of the contact pin according to a fourth embodiment of the present invention.
  • FIGS. 34A to 34C are views showing a probe for evaluation test.
  • FIGS. 35A and 35B are views showing a solder specimen for the evaluation test.
  • FIG. 36 is an enlarged sectional view showing a section analyzing result of a contact portion of a conventional probe.
  • FIG. 37 is a graph representing a relationship between a cycle of the contact portion of the conventional probe and a resistance.
  • FIG. 38 is a sectional view, in an enlarged scale, representing a section analyzing result of a contact portion of a probe of a contact material of Pd—Ag alloy according to the fourth embodiment of the present invention.
  • FIG. 39 is a graph representing a relationship between a cycle of the contact portion of the probe of the contact material of Pd—Ag alloy according to the fourth embodiment.
  • FIGS. 40A to 40D are enlarged sectional views representing a section analyzing result of a contact portion of a probe having a contact material which is a material made of an Ag added with ZnO according to the fifth embodiment of the present invention.
  • FIG. 41 is a graph representing a relationship between the cycle of a contact portion of the probe having the contact material which is a material made of an Ag added with ZnO and the resistance according to the fifth embodiment and an electric resistance.
  • FIGS. 1 to 10 represent the first embodiment of the present invention.
  • An electric contact in this first embodiment is herein a contact pin 11 arranged to an IC socket (socket for an electrical part) for a burn-in test, and electrically connects an IC package as an electrical part to a circuit board through the contact pin at the burn-in test time.
  • This IC package has a number of terminals on a lower surface of a rectangular package body, and the terminal is made of mainly Sn and includes no lead, so called “lead-free solder”.
  • the IC socket has a socket body mounted to the circuit board and a number of contact pins are arranged to the socket body.
  • the contact pin 11 is composed of, as shown in FIG. 1 , a base material 12 , a base layer 13 , and outermost surface layer 14 .
  • the base material 12 is made of a material having conductivity and is herein made of phosphor bronze, and the base layer 13 is formed from an Ni plating having a thickness of 2-3 ⁇ m.
  • the outermost surface layer 14 is made of a material into which Sn is dissolved when heated and is herein formed of a Pd—Ag plating layer of about 1 ⁇ m thick, and the Ag is largely set in weight ratio.
  • This Pd—Ag plating layer is formed by, for example, a plating method or an ion plating method.
  • the ion-plating method is performed by such a manner that the Ni plating of 2-3 ⁇ m is applied as the base layer 13 and the Pd plating and Ag plating of 1 ⁇ m are laminated as the most outer layer 14 using ion plating method.
  • the thus formed contact pin 11 is contacted to the terminal of the IC package to carry out the repeated burn-in tests.
  • an electric resistance of the contact pin 11 increased in an early stage, but in the present embodiment, the increasing of the electric resistance could be suppressed and the burn-in test could be appropriately carried out.
  • the outermost surface layer of the contact pin 11 is an Au plating layer and the base layer 13 is made of Ni, so that in the repeated burn-in test of the IC package having the lead-free solder terminal, the Au is dissolved into the terminal side, and thus, the Au plating layer is vanished and Ni of the base layer 13 is exposed outside. Then, the Ni is oxidized in air and an oxidation film having large specific resistance is formed. As a result, the electric resistance of the contact portion of the contact pin 11 with respect to the terminal becomes large.
  • the plating layer made of Pd and Ag is provided for the outermost surface layer of the contact pin 11 , Sn in the solder of the terminal of the IC package is transferred and dispersed into the outermost surface layer 14 . Accordingly, the Pd and Ag are not dissolved into the IC package terminal side, and hence, Ni of the base layer 13 is never exposed. In addition, the Sn is hardly accumulated on the surface of the outermost layer 14 as oxide.
  • a probe 17 of the conventional Au plating in the burn-in test and a probe 18 having the outermost surface layer being formed of the Pd—Ag plating layer according to the present invention were compared in terms of their electric resistance increasing tendency.
  • the test was not an actual mount test using the contact pin but was a model test using a probe and a solder specimen having simple shapes for the reason of accurately evaluating characteristics of materials of the contact portion. That is, it is considered that in the contacting in a state in which the contact pins are arranged to the socket for the electrical part, much unstable factors exist, and reliability of reproducibility of the test conditions may includes a problem.
  • the probe and the solder specimen used in the present model test are specified as follows.
  • Phosphor bronze is used as the base material.
  • the probe 17 has a contact portion 17 a having an R-shape as shown in FIG. 2 .
  • this contact portion 17 a Quality control and manufacture of this contact portion 17 a was made in such a manner that the front end portion of the base material was ground by using grinding paper having #1200 roughness, and thereafter, was finished by using grinding paper having #4000 roughness. Thereafter, Ni plating of 2-3 ⁇ m was effected and Au plating of 0.8 ⁇ m was then applied thereon.
  • Phosphor bronze is used as the base material.
  • the probe 18 has a contact portion 18 a having an R-shape as shown in FIG. 2
  • Quality control and manufacture of the contact portion 18 a was made by a plating manufacture method and ion-plating manufacture method.
  • Phosphor bronze was used as the base material.
  • a solder specimen had such a shape, as shown in FIG. 3 , that a section in a direction normal to the longitudinal direction was approximately semi-circular shape.
  • Ni plating of 2-3 ⁇ m was effected to the base material as a barrier layer, and lead-free solder plating of 10 ⁇ m was then applied thereon.
  • Resistance measuring method four terminal method
  • FIGS. 4A to 4D represent a result of the section analysis (8000 times) after the transfer of the contact portion 17 a of the probe 17 .
  • a thin color portion shows a section of the probe 17 .
  • a thin color portion shows Au
  • a thin color portion shows Sn
  • a thin color portion shows Ni
  • FIGS. 5A to 5C represent a result of the surface analysis (8000 times) after the transfer of the contact portion 17 a of the probe 17 .
  • FIG. 5A which shows a component image a whitish granular portion shows a transferred Sn and a dark granular portion Ni.
  • FIG. 5A which shows a component image
  • a whitish granular portion shows a transferred Sn and a dark granular portion Ni.
  • a dark color portion shows Ni
  • a thin color portion shows the transferred Sn
  • a dark color portion shows the transferred Sn
  • a thin color portion shows Ni
  • the exposure of the Ni to air may form an oxide film having a large specific resistance, thus increasing the electrical contact resistance.
  • FIGS. 7A to 7E show a result of section analysis (8000 times) of the contact portion 18 a of the probe 18 after the transfer.
  • FIG. 7A shows a component image
  • thin color portion shows the probe section
  • FIG. 7B thin color portion shows Ag
  • FIG. 7C thin color portion shows Pd
  • FIG. 7D thin color portion shows Sn diffused entirely
  • FIG. 7E thin color portion shows Ni.
  • FIGS. 9A to 9E show a result of the contact portion section analysis by the Pd—Ag ion plating, and it is found that as like as the Pd—Ag plating, the Ni is not exposed to air at the surface of the contact portion and the Sn is diffused inside.
  • FIGS. 11 to 16 represent modified examples different from the first embodiment mentioned hereinabove.
  • the contact pin 11 shown in FIG. 11 has a Pd plating layer 14 b between the Pd—Ag plating layer 14 a and the base layer 13
  • the contact pin shown in FIG. 12 has an Ag-plating layer 14 c between the Pd—Ag plating layer 14 a and the base layer 13
  • the contact pin 11 shown in FIG. 13 has a Pd plating layer 14 b on the Pd—Ag plating layer 14 a
  • the contact pin 11 shown in FIG. 14 has an Ag-plating layer 14 c on the Pd—Ag plating layer 14 a
  • the contact pin 11 shown in FIG. 11 shown in FIG. 11 shown in FIG. 11 has a Pd plating layer 14 b between the Pd—Ag plating layer 14 a and the base layer 13
  • the contact pin 11 shown in FIG. 13 has a Pd plating layer 14 b on the Pd—Ag plating layer 14 a
  • the contact pin 11 shown in FIG. 14 has an Ag-plating layer 14 c on the P
  • the contact pin shown in FIG. 16 has an Ag-plating layer 14 c and an Pd plating layer 14 b laminated in this order on the base layer 13 .
  • the plating layer composed of Pd and Ag is formed as the outermost surface layer of the contact pin 11 , so that Sn in the solder of the IC package terminal is transferred and diffused into the outermost surface layer 14 of the contact pin 11 under a burn-in environment (temperature of 80 to 170° C.). Accordingly, the Pd and Ag are not dissolved into the IC package terminal side, and Ni of the base layer 13 is not exposed. In addition, the Sn is hardly stored as oxide on the outermost surface layer 14 . As a result, even if the burn-in test is repeated, the early increasing of the electric resistance of the contact portion of the contact pin 11 can be effectively suppressed.
  • FIGS. 17 to 21 represent the second embodiment according to the present invention.
  • the contact pin 11 is composed of, as shown in FIG. 17 , a base material 12 , a base layer 13 and an outermost surface layer 14 .
  • the base material 12 is made of a conductive material such as phosphor bronze herein.
  • the base layer 13 is formed of the Ni plating having a thickness of 2 to 3 ⁇ m.
  • the outermost surface layer 14 is made of a material into which Sn is dissolved by applying heat, and Ag—Sn (Ag: 10 weight %) plating layer having a thickness of about 1 ⁇ m, herein.
  • the weight ratio of Ag to Sn is 80 or more weight % of Ag to the remaining Weight % of Sn.
  • This Ag—Sn plating layer is formed by, for example, a plating method or an ion-plating method.
  • the increasing of the electric resistance can be suppressed and the burn-in test can be appropriately carried out contrary to the conventional method in which the electric resistance is increased in an early stage, by repeatedly performing the burn-in test in contact of the contact pin with the IC package terminal.
  • the outermost surface layer 14 of the contact pin 11 is made of the Au-plating layer and the base layer 13 is made of the Ni material
  • the Au is dissolved into the terminal side, the Au plating layer is vanished, and Ni in the base layer 13 is exposed to air.
  • the Ni is then oxidized in air and an oxide film having high specific resistance is formed. As a result, the electric resistance of the contact portion of the contact pin 11 to the terminal is made high.
  • the plating layer made of Ag and Sn is provided for the outermost surface layer 14 of the contact pin 11 , Sn in the solder of the terminal of the IC package is transferred and diffused into the outermost surface layer 14 of the contact pin 11 at the burn-in environment at a temperature of 80 to 170° C. Accordingly, the Sn is hardly stored as an oxide on the surface of the outermost surface layer 14 of the contact pin 11 with the Ag and Sn being not dissolved into the terminal side of the IC package and with Ni of the base layer 13 being not exposed outside.
  • the probe 17 of the conventional Au plating and the probe 18 having the outermost surface layer of the Pd—Ag plating layer in the burn-in test were compared in terms of electric resistance increasing tendency.
  • a model test, not a mount test using an actual contact pin, using a simple shaped probe and solder specimen was performed. This was done to get more accurate evaluation of characteristics of a material of the contact portion. That is, in the contact in which the contact pin is mounted to a socket for an electrical part, there are many unstable factors, and reliability in reproducibility of the test condition may include a problem.
  • the probe and solder specimen used for the present model test have the following specifications.
  • Phosphor bronze was used as the base material.
  • the probe 17 has the shape such that the contact portion 17 a thereof has an R-shape as shown in FIG. 2 .
  • this contact portion 17 a The quality control and manufacture of this contact portion 17 a were such that the front end of the base material was ground by a grinding paper of #1200 roughness, and thereafter, was finished by using a grinding paper of #4000 roughness. A Ni plating was thereafter effected so as to have a thickness of 2-3 ⁇ m, and the Au plating of 0.8 ⁇ m thick was then applied thereon.
  • Phosphor bronze was used as the base material.
  • the probe 18 has a shape such that the contact portion 18 a thereof has an R-shape as shown in FIG. 2 .
  • this contact portion 18 a was effected by the plating method and the ion-plating method.
  • the front end of the base material was ground by a grinding paper of #1200 roughness, and thereafter, was finished by using a grinding paper of #4000 roughness.
  • a Ni plating was thereafter effected so as to have a thickness of 2-3 ⁇ m and an Ag—Sn (Ag 10 weight %) plating of 1.0 ⁇ m was then applied thereon.
  • a solder specimen 20 had such a shape, as shown in FIGS. 3A to 3C , that a section in a direction normal to the longitudinal direction was approximately semi-circular shape.
  • Resistance measuring method four terminal method
  • FIG. 18 shows a result of the section analysis (8000 times) after the transfer of the contact portion 17 a of the probe 17 , in which FIG. 18A represents a component image having slightly thin color portion showing the section of the probe 17 , and in FIG. 18B , the thin color portion shows Au, in FIG. 18C , the thin color portion shows Sn, and in FIG. 18D , thin color portion shows Ni. From this figure, it is found that Ni was exposed to air at the surface of the contact portion 17 a.
  • This Ni forms an oxide film in air having high specific resistance by the exposure of the Ni, and because of this reason, it is considered that the contact resistance increases.
  • FIG. 19 shows a graph representing a relationship between the cycle number and an electric resistance.
  • This graph shows the measured result of the electric resistance of the contact portion 17 a at every cycle using four samples of the probe 17 , and from this graph, it is found that as the cycle number increases, the electric resistance also increases.
  • the probe 18 of the Ag—Sn plating there is no case of vanishing the outermost surface, and hence, the base layer Ni on the probe 18 side is never exposed. This is considered as one reason for keeping the low resistance.
  • the transfer of a substance generated between the contact portion 18 a of the probe 18 side and the contact portion on the solder specimen 20 side is a diffusion of the Sn into the contact portion on the probe 18 side from the contact portion 18 a of the solder specimen 20 side.
  • the oxide layer of the respective metals of the contact portion surface is destroyed, and this is considered as another one reason for keeping the low resistance.
  • the Sn diffused portion of the contact portion 18 a on the probe 18 side of the Ag—Sn plating is likely destroyed physically by the contacting to the solder specimen 20 in comparison with an oxide film of Ni even if the Sn diffused portion is oxidized.
  • FIGS. 20A to 20D show the section analysis results (8000 times) after the transfer of the contact portion 18 a of the probe 18
  • FIG. 20A shows a component image
  • thin color portion shows the section of the probe
  • FIG. 20B thin color portion shows the Ag
  • FIG. 20C thin color portion shows the Sn
  • FIG. 20D thin color portion shows the Ni.
  • Ni is not exposed to air at the surface of the contact portion 18 a, and as also shown in FIG. 20C , the Sn is diffused inside.
  • FIGS. 22A to 31 show the third embodiment of the present invention.
  • An electric contact of this third embodiment is a contact pin disposed to an IC socket (socket for an electrical part) for a burn-in test, and the IC package as electrical part and a circuit board are electrically connected through this contact pin at the time of the burn-in test.
  • the IC package has a number of terminals on a lower surface of a rectangular package body, and the terminal is mainly made of Sn and includes no lead, so-called “lead-free solder”.
  • the IC socket has a socket body mounted to the printed circuit board, and a number of contact pins are arranged to the socket body.
  • the contact pin 11 is formed from a composite material of Ag—ZnO substance as the composite material of an Ag-an oxide of a metal element, into which Sn (tin) is dissolved and diffused by applying heat.
  • the weight ratio of Ag:ZnO is 89.7:10.3, and Ag is more than 80%.
  • the contact pin can be made of Ag—SnO 2 substance as well as an Ag—ZnO substance as a composite material of an Ag-metal oxide.
  • the contact pin may be made of a composite material of Ag—C substance as a composite material of an Ag-a substance other than metal.
  • the weight ratio of Ag:C is 99:1, and Ag is more than 80%.
  • the electric resistance of the contact pin was increased in an early stage, but according to the present embodiment the increasing of the electric resistance can be suppressed and the burn-in test can be appropriately performed.
  • the outermost layer of the contact pin is formed of an Au plating layer and the base layer is made of the Ni, so that in the repeated burn-in test of the IC package having the lead-free solder terminal, the Au is dissolved into the terminal side, and thus the Au plating layer is varnished and Ni of the base layer is exposed. Then, the Ni is oxidized in air and an oxide film having high specific resistance is formed. As a result, it is considered that the electric resistance of the contact portion of the contact pin with respect to the terminal becomes high.
  • the contact portion of the contact pin is made of the Ag—ZnO composite or Ag—C composite, the Sn is diffused deeply inside of the contact portion and the Sn is hardly accumulated as an oxide on the surface of the contact portion, thus keeping the low resistance.
  • a probe 117 of the conventional Au plating in the burn-in test and a probe 118 having the contact portion made of the Ag—ZnO composite or a probe 119 having the contact portion made of the Ag—C composite according to the present invention were compared in terms of their electric resistance increasing tendency by carrying out burn-in tests.
  • the test was not a actual mount test using the contact pin but was a model test using probes 117 , 118 and 119 having simple shapes and a solder specimen 120 for the reason of accurately evaluating characteristics of materials of the contact portion. That is, it is considered that in the contact state in which the contact pins are arranged to the socket for the electrical part, many unstable factors exist and reliability of reproducibility of the test conditions may include a problem.
  • the probes 117 , 118 , 119 and the solder specimen 120 used in the present model test are specified as follows.
  • Phosphor bronze is used as the base material.
  • the probe 117 has a contact potion 117 a having a right angle of 90 degrees as shown in FIGS. 22A to 22C .
  • Quality control and manufacture of this contact portion 117 a was made in a manner such that the front end portion of the base material was ground by using grinding paper having #1200 roughness, and thereafter, was finished by using grinding paper having #4000 roughness. Thereafter, Ni plating of 2-3 ⁇ m was effected and Au plating of 0.8 ⁇ m was then applied thereon.
  • the probe 118 has a contact portion 118 a having an angle of 90 degrees as shown in FIGS. 22A to 22C .
  • Both the surfaces of the front end portion of the contact portion 118 a are ground with a grinding paper of #1200 roughness, and thereafter, finished with a grinding paper of #4000 roughness.
  • the probe 119 has a contact portion 11 a having an angle of 90 degrees as shown in FIG. 22 .
  • Both the surfaces of the front end portion of the contact portion 119 a are ground with a grinding paper of #1200 roughness, and thereafter, finished with a grinding paper of #4000 roughness.
  • a solder specimen 120 was prepared by printing Cu/NiAu to a glass epoxy substrate, as shown in FIGS. 23A and 23B , had such a shape, screen-printing a lead-free paste solder (Sn—Ag—Cu, weight ratio of 96.5:3:0.5) on the thus formed glass epoxy substrate and having the same reflowed by a surface tension to thereby form a contact portion 120 a.
  • a lead-free paste solder Sn—Ag—Cu, weight ratio of 96.5:3:0.5
  • Resistance measuring method four terminal method
  • the above test cycle was carried out and the contact portions 117 a, 118 a and 119 a of the respective probes 117 , 118 and 119 were analyzed.
  • the Au plated probe 117 when the burn-in test was repeated, the Au was dissolved into the solder specimen 120 and the Au plating layer was vanished, and the base layer Ni was partially exposed.
  • FIGS. 24A to 24D represent a result of the section analysis (8000 times) after the transfer of the contact portion 117 a of the probe 117 .
  • FIG. 24A shows a component image, in which thin color portion shows a section of the probe contact portion 117 a, in FIG. 24B , thin color portion shows Au, in FIG. 24C , thin color portion shows Sn, and in FIG. 24D , thin color portion shows Ni. Further, from FIG. 24D , it will be found that Ni is exposed on the surface of the contact portion 117 a.
  • the exposure of the Ni to air may form an oxide film having a high specific resistance, thus increasing the electrical contact resistance.
  • FIGS. 26A to 26D show a result of section analysis (8000 times) of the contact portion 118 a of the probe 118 after the transfer.
  • FIG. 26A shows a component image
  • thin color portion shows the section of the probe contact portion 118 a
  • FIG. 26B thin color portion shows Ag
  • FIG. 26C thin color portion shows Zn
  • FIG. 26D thin color portion shows Sn.
  • the oxide layer of the respective metals on the surface of the contact portion 119 a is destroyed by transferring the Sn in the solder specimen 120 to the probe 119 and then diffusing it inside.
  • the transfer of the substance between the contact portion 119 a of the probe 119 side and the contact portion 120 a of the solder specimen 120 side is the transfer of the Sn to the contact portion 119 a of the probe 119 side from the contact portion 120 a of the solder specimen 120 side. Accordingly, it is considered that the surface of the probe 119 is never vanished, and even if the Ni exists as the base layer on the probe 119 side, the Ni is never exposed outside.
  • FIGS. 28A to 28C show a result of section analysis (8000 times) of the contact portion 119 a of the probe 119 after the transfer.
  • FIG. 28A shows a component image
  • thin color portion shows the section of the probe contact portion 119 a
  • FIG. 28B thin color portion shows Ag
  • FIG. 28C thin color portion shows Sn.
  • the test contents of this embodiment are similar to those of the Ag—ZnO case and the Ag—C case mentioned hereinbefore.
  • the Sn diffused portion of the probe 121 of the Ag—SnO 2 composite will be easily physically destroyed, even if its surface is oxidized, by the contact to the solder specimen 120 in comparison with the oxide film of the Ni.
  • FIGS. 30A to 30C show a result of section analysis (8000 times) of the contact portion 121 a of the probe 121 after the transfer.
  • FIG. 30A shows a component image
  • thin color portion shows the section of the probe contact portion 121 a
  • FIG. 30B thin color portion shows Ag
  • FIG. 30C thin color portion shows Sn.
  • FIGS. 32A to 32D represent the fourth embodiment of the present invention.
  • An electric contact of this fourth embodiment is a contact pin to be disposed to an IC socket (socket for an electrical part) for a burn-in test, and the IC package as electrical part and a circuit board are electrically connected through this contact pin at the time of the burn-in test.
  • This IC package has a number of terminals on a lower surface of a rectangular package body, and the terminal is mainly made of Sn and includes no lead, so-called “lead-free solder”.
  • the IC socket has a socket body mounted on the circuit board and a number of contact pins are arranged to the socket body.
  • the contact pin has a contact portion 210 contacting the terminal 215 , and as shown in FIGS. 32A to 32D , the contact portion 210 to be contacted to a terminal 215 is composed of a base material 211 of copper (Cu), a Ni (nickel) plating layer 212 formed on the surface side of the base material 211 , and a contact material 213 formed on the surface side of the Ni plating layer 212 .
  • Ni (nickel) plating layer 212 formed on the surface side of the base material 211
  • a contact material 213 formed on the surface side of the Ni plating layer 212 .
  • This contact material 213 is a material into which Sn contained in a solder is diffused, and the contact material 213 is selected from a material having a tensile strength higher than that of the lead-free solder, and being able to give a Sn-diffused alloy having a tensile strength higher than that of the lead-free solder.
  • contact material 213 there is used a material formed from a plating layer of Pd (palladium)-Ag (silver) alloy, a laminated layer of an Ag plating layer and a Pd—Ag alloy layer, a laminated layer of an Ag plating layer and a Pd plating layer, or a plating layer of Ag—Sn alloy.
  • the tensile strength of the Pd—Ag alloy as the contact material 213 is about 500 MPa.
  • the strength of the solder is about 50 MPa, and a tensile strength of the Pd—Ag alloy in the case where the Sn is diffused in the alloy as the contact material 213 is higher than the tensile strength of the solder.
  • the tensile strength of the laminated layer of Ag plating layer and Pd—Ag alloy layer, the laminated layer of Ag plating layer and Pd plating layer, or the plating layer of Ag—Sn alloy, and the tensile strength of an alloy of these materials and the Sn are both higher than the tensile strength of the solder.
  • the electric resistance increased in an early stage in this embodiment, the increasing of the electric resistance can be suppressed and the burn-in test can be appropriately performed by contacting such contact pin to the terminal 215 of the % IC package and repeatedly carrying out the burn-in test.
  • the outermost surface layer of the contact pin is an Au plating layer and the base layer is made of Ni
  • Au is dissolved into the terminal side
  • the Au plating layer is vanished and Ni of the base layer is exposed during the repeated burn-in test of the IC package having the lead-free solder terminal.
  • the Ni forms an oxide film in air having large specific resistance, so that the electric resistance of the contact portion of the contact pin to the terminal is increased.
  • the contact portion 210 of the contact pin is made of the contact material 213 into which Sn contained in the solder is diffused, and accordingly, the Sn diffuses deeply inside the contact portion 210 , and the Sn is hardly stored as an oxide on the surface of the contact portion 210 .
  • the contact material 213 is peeled off at a boundary surface between the contact portion 210 and the terminal of the electrical part. Therefore, a metal on the surface of the contact portion 210 on the electrical part terminal 215 side is not peeled off, and hence, the Ni plating layer 212 is not exposed and the low resistance can be maintained, so that even if the burn-in test is repeatedly carried out, the increasing of the electric resistance of the contact portion 210 in an early stage can be suppressed.
  • FIGS. 33 A to 33 D′ represent the fifth embodiment of the present invention.
  • a contact material 214 of this fifth embodiment differs from the contact material 213 of the fourth embodiment.
  • the contact material 214 of this fifth embodiment enables Sn contained in the solder to be diffused by adding an oxide or organic material to a material in which Sn contained in the solder is hardly diffused. Further, this contact material 214 has a tensile strength higher than that of the solder, and the tensile strength of an alloy in which Sn is diffused is also higher than that of the solder.
  • this contact material 214 there is used a material made by adding zinc oxide, carbon or tin oxide to silver, for example.
  • a tensile strength of the material made by adding zinc oxide to silver as the contact material 214 is 150-300 MPa.
  • the strength of the solder is about 50 MPa, and a tensile strength of an alloy, in the case where the Sn is diffused into the contact material 214 , is higher than the tensile strength of the solder.
  • the tensile strength of the other material in which C is added to Ag or that of a material in which SnO 2 is added to Ag, and that of an alloy of these materials and the Sn are higher than the tensile strength of the solder.
  • the contact portion 210 of the contact pin is made of the contact material 214 in which Sn contained in the solder is diffused. Therefore, the Sn is diffused deeply inside the contact portion 210 and the Sn is hardly stored as an oxide on the surface of the contact portion 210 .
  • the contact material 214 is peeled off at a boundary surface between the contact portion 210 and the terminal 215 of the electrical part. Therefore, a metal on the surface of the contact portion 210 on the electrical part terminal 215 side is not peeled off, and hence, the Ni plating layer 212 is not exposed and the low resistance can be maintained, so that even if the burn-in test is repeatedly carried out the increasing of the electric resistance of the contact portion 210 in an early stage can be suppressed.
  • the probe 217 of the conventional Au plating and the probe 218 provided with the contact material 213 (Pd—Ag) of the contact portion of the present invention or the probe 219 provided with the contact material 214 (ZnO is added to Ag) were compared in terms of the electric resistance increasing tendency by carrying out the burn-in test.
  • a model test not a mount test using an actual contact pin, using simple-shaped probes 217 , 218 and 219 and solder specimen 220 , was performed. This was done to get more accurate evaluation of characteristics of a material of the contact pin. That is, this is because that the contact in which the contact pin is mounted to a socket for an electrical part provides many unstable factors, and reliability in reproducibility of the test condition may include a problem.
  • the probes 217 , 218 and 219 and solder specimen 220 used for the present model test have the following specifications.
  • Phosphor bronze was used as the base material.
  • the probe 217 has the shape such that the contact portion 217 a thereof has an angle of 90 degrees as shown in FIGS. 34A to 34C .
  • this contact portion 217 a The quality control and manufacture of this contact portion 217 a were such that the front end of the base material was ground by a grinding paper of #1200 roughness, and thereafter, was finished by using a grinding paper of #4000 roughness. A Ni plating was thereafter effected so as to have a thickness of 2-3 ⁇ m and the Au plating of 0.8 ⁇ m was then applied thereon.
  • Phosphor bronze was used as the base material.
  • the probe 218 has the shape such that the contact portion 218 a thereof has an angle of 90 degrees as shown in FIGS. 34A to 34C .
  • this contact portion 218 a The quality control and manufacture of this contact portion 218 a were such that the front end of the base material was ground by a grinding paper of #1200 roughness, and thereafter, was finished by using a grinding paper of #4000 roughness. A Ni plating was thereafter effected so as to have a thickness of 2-3 ⁇ m and the Pd—Ag plating of 2-3 ⁇ m thick was then applied thereon. The weight ratio of Pd to Ag was 6:4.
  • the Ag—ZnO was used entirely.
  • the probe 219 has the shape such that the contact portion 219 a thereof has an angle of 90 degrees as shown in FIGS. 34A to 34C .
  • this contact portion 219 a The quality control and manufacture of this contact portion 219 a were such that the front end of the base material was ground by a grinding paper of #1200 roughness, and thereafter, was finished by using a grinding paper of #4000 roughness.
  • the weight ratio of the Ag:ZnO was 9:1.
  • the solder specimen 220 was formed, as shown in FIGS. 35A and 35B , by printing Cu/NiAu to the glass epoxy substrate, screen-printing a lead-free solder paste (Sn—Ag—Cu (weight ratio: 96.5:3:0.5)) on the substrate and then having the same reflowed by the surface tension to thereby form the contact portion 120 a.
  • a lead-free solder paste Sn—Ag—Cu (weight ratio: 96.5:3:0.5)
  • Resistance measuring method four terminal method
  • the Au was dissolved in the solder specimen 220 side, the Au plating layer was vanished, and a part of the Ni base layer was exposed.
  • FIG. 36 shows a result of the section analysis (8000 times) after the transfer of the contact portion 217 a of the probe 217 , and from this FIG. 36 , it is found that the Ni is exposed to air at the surface of the contact portion 217 a.
  • This Ni forms an oxide film in air having large specific resistance after the exposure of the Ni, and because of this reason, it is considered that the contact resistance increases.
  • FIG. 37 shows a graph representing a relationship between the cycle number and the electric resistance.
  • This graph shows the measured result of the electric resistance of the contact portion 217 a at every cycle using four samples of the probe 217 , and from this graph, it will be found that as the cycle number increases, the electric resistance also increases.
  • the transfer of the substance caused between the contact portion 218 a of the probe 218 and the contact portion 220 a on the solder specimen 220 side is a transfer of the Sn from the contact portion 220 a of the solder specimen 220 side to the contact portion 218 a on the probe 218 side, so that the surface portion of the probe 218 is never vanished and even if the Ni exists as the base layer, the Ni is never exposed.
  • FIG. 38 shows a result of section analysis (8000 times) of the contact portion 218 a of the probe 218 after the transfer. From this FIG. 38 , it is found that the Sn is diffused inside.
  • the strength of the contact material 213 of the Pd—Ag is higher than that of the solder, so that the metal on the surface of the contact portion 218 a is not transferred to the solder specimen 220 side, and the Ni as the base layer is not hence exposed.
  • the probe 219 of the material in which ZnO is added to Ag it is considered that Sn of the solder specimen 220 is transferred to the probe 218 and diffused inside thereof, so that the oxide layer of the various metals on the surface of the contact portion 219 a is destroyed.
  • the transfer of the substance caused between the contact portion 219 a on the probe 219 side and the contact portion 220 a on the solder specimen 220 side is a transfer of Sn from the contact portion 220 a of the solder specimen 220 side to the contact portion 219 a on the probe 219 side, so that the surface portion of the probe 219 is never vanished and even if Ni exists as the base layer, the Ni is never exposed.
  • FIGS. 40A to 40D show a result of section analysis (8000 times) of the contact portion 219 a of the probe 219 after the transfer.
  • FIG. 40A shows a component image
  • FIG. 40B thin color portion shows the Ag
  • FIG. 40C thin color portion shows ZnO
  • FIG. 40D thin color portion shows Sn.
  • the Sn is diffused inside the contact portion 219 a.
  • the Sn is not diffused in the inside of the Ag, any alloy is not formed, and the Sn stored on the surface of the Ag is oxidized, thereby increasing the electric resistance.
  • FIG. 41 shows a relationship between the cycle number and the electric resistance according to the measurement result.
  • This graph shows the measurement result of the electric resistance of the contact portion 219 a at every cycle using two samples of the probe 219 , and in view of this graph, it is found that even if the cycle number increases, the electric resistance does not increase.
US13/965,494 2005-09-22 2006-09-22 Electric contact and socket for electrical part Expired - Fee Related USRE45924E1 (en)

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PCT/JP2006/318870 WO2007034921A1 (ja) 2005-09-22 2006-09-22 電気接触子及び電気部品用ソケット
US11/719,465 US8016624B2 (en) 2005-09-22 2006-09-22 Electric contact and socket for electrical part
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150333415A1 (en) * 2014-05-19 2015-11-19 Yazaki Corporation Minute current crimping terminal and minute current wire harness
US20160276768A1 (en) * 2013-12-04 2016-09-22 Autonetworks Technologies, Ltd. Electric contact and connector terminal pair

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007034921A1 (ja) 2005-09-22 2007-03-29 Enplas Corporation 電気接触子及び電気部品用ソケット
CN101009409A (zh) * 2007-01-26 2007-08-01 番禺得意精密电子工业有限公司 使端子可防虹吸的方法及使用该方法制造的端子
JP4834023B2 (ja) * 2007-03-27 2011-12-07 古河電気工業株式会社 可動接点部品用銀被覆材およびその製造方法
TWM379095U (en) * 2009-09-30 2010-04-21 Elitegroup Computer Sys Co Ltd Conductive pin structure of main board and connector
MY167685A (en) 2012-03-21 2018-09-21 Enplas Corp Electric contact and socket for electrical part
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JP6006793B2 (ja) * 2012-06-25 2016-10-12 山一電機株式会社 電気テスト用コンタクトおよびそれを用いた電気テスト用ソケット
JP2014182976A (ja) * 2013-03-21 2014-09-29 Enplas Corp 電気接触子及び電気部品用ソケット
JP6330689B2 (ja) * 2015-02-19 2018-05-30 株式会社オートネットワーク技術研究所 電気接点対およびコネクタ用端子対
JP6750545B2 (ja) * 2016-05-19 2020-09-02 株式会社オートネットワーク技術研究所 プレスフィット端子接続構造
KR102417333B1 (ko) * 2016-12-21 2022-07-05 현대자동차 주식회사 전기 접점 소재
JP6653340B2 (ja) * 2018-02-01 2020-02-26 Ｊｘ金属株式会社 バーンインテストソケット用表面処理金属材料、それを用いたバーンインテストソケット用コネクタ及びバーンインテストソケット
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Citations (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4269671A (en) * 1979-11-05 1981-05-26 Bell Telephone Laboratories, Incorporated Electroplating of silver-palladium alloys and resulting product
EP0132596A2 (en) 1983-06-25 1985-02-13 Masami Kobayashi Solderable nickel-iron alloy article and method for making same
EP0136713A2 (en) 1983-10-04 1985-04-10 Masami Kobayashi Electric contact member and method of making same
US4529667A (en) * 1983-04-06 1985-07-16 The Furukawa Electric Company, Ltd. Silver-coated electric composite materials
JPS63304654A (ja) * 1987-06-03 1988-12-12 Hitachi Cable Ltd リ−ドフレ−ム
EP0474499A2 (en) * 1990-09-05 1992-03-11 Shinko Electric Industries Co. Ltd. Lead frame for a semiconductor device
JPH0541425A (ja) 1990-11-30 1993-02-19 Tokyo Electron Yamanashi Kk プローブ針
JPH05117898A (ja) * 1991-10-29 1993-05-14 Furukawa Electric Co Ltd:The 半導体チツプ実装用リードフレームとその製造方法
JPH08148630A (ja) * 1994-11-22 1996-06-07 Kyocera Corp 半導体装置の製造方法
JPH08153843A (ja) * 1994-11-29 1996-06-11 Furukawa Electric Co Ltd:The 半導体チップ実装用リードフレーム
JPH09232057A (ja) 1996-08-07 1997-09-05 Enplas Corp Ｉｃソケット
JPH09275182A (ja) 1996-04-02 1997-10-21 Seiichi Serizawa 半導体装置用リ−ドフレ−ム
JPH1038918A (ja) 1996-07-19 1998-02-13 Denki Kagaku Kogyo Kk プローブピン及びそれを有するコンタクター
JPH118340A (ja) * 1997-06-18 1999-01-12 Dainippon Printing Co Ltd 半導体装置用リードフレームとその製造方法
JPH11111909A (ja) * 1997-10-07 1999-04-23 Seiichi Serizawa 半導体装置用リードフレーム
JP2000252402A (ja) 1999-03-04 2000-09-14 Hitachi Ltd 半導体装置、半導体装置の実装方法及び電子装置
JP2000286542A (ja) * 1999-03-31 2000-10-13 Harima Chem Inc 半田付け方法及び半田付け基材
JP2000348793A (ja) 1999-06-07 2000-12-15 Shin Etsu Polymer Co Ltd 電気コネクタ
JP2001056347A (ja) 1999-08-20 2001-02-27 Hoya Corp コンタクト部品及びその製造方法
JP2002298966A (ja) 2001-03-30 2002-10-11 Takamasa Yoshimura 高耐久性コンタクト
US6521358B1 (en) * 1997-03-04 2003-02-18 Matsushita Electric Industrial Co., Ltd. Lead frame for semiconductor device and method of producing same
WO2003027689A1 (en) 2001-09-24 2003-04-03 Rika Electronics International Electrical test probes and methods of making the same
JP2003149267A (ja) 2001-11-07 2003-05-21 Sumitomo Electric Ind Ltd 半導体素子の電気、電子特性測定用端子およびその製造方法
JP2004093355A (ja) 2002-08-30 2004-03-25 Toshiba Corp Ｐｄ合金系プローブピンおよびそれを用いたプローブピン装置
JP2004245669A (ja) 2003-02-13 2004-09-02 Seiko Epson Corp プローブカード及びその製造方法、プローブ装置、プローブ試験方法、半導体装置の製造方法
US20050006976A1 (en) * 2003-07-11 2005-01-13 Ryouichi Someya Commutating device for small-sized motor and manufacturing method therefor
US20050145997A1 (en) * 2003-11-28 2005-07-07 Isabell Buresch Layer sequence for producing a composite material for electromechanical components
US20050233566A1 (en) * 2004-04-16 2005-10-20 Paek Sung-Kwan Lead frame and method of manufacturing the same
US20100163276A1 (en) * 2007-03-27 2010-07-01 Suguru Yamaguchi Silver-coated material for movable contact component and method for manufacturing such silver-coated material
US20100186993A1 (en) * 2007-03-27 2010-07-29 Suguru Yamaguchi Silver-coated material for movable contact component and method for manufacturing such silver-coated material
US8016624B2 (en) 2005-09-22 2011-09-13 Enplas Corporation Electric contact and socket for electrical part

Patent Citations (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4269671A (en) * 1979-11-05 1981-05-26 Bell Telephone Laboratories, Incorporated Electroplating of silver-palladium alloys and resulting product
US4529667A (en) * 1983-04-06 1985-07-16 The Furukawa Electric Company, Ltd. Silver-coated electric composite materials
EP0132596A2 (en) 1983-06-25 1985-02-13 Masami Kobayashi Solderable nickel-iron alloy article and method for making same
EP0136713A2 (en) 1983-10-04 1985-04-10 Masami Kobayashi Electric contact member and method of making same
JPS63304654A (ja) * 1987-06-03 1988-12-12 Hitachi Cable Ltd リ−ドフレ−ム
EP0474499A2 (en) * 1990-09-05 1992-03-11 Shinko Electric Industries Co. Ltd. Lead frame for a semiconductor device
JPH0541425A (ja) 1990-11-30 1993-02-19 Tokyo Electron Yamanashi Kk プローブ針
JPH05117898A (ja) * 1991-10-29 1993-05-14 Furukawa Electric Co Ltd:The 半導体チツプ実装用リードフレームとその製造方法
JPH08148630A (ja) * 1994-11-22 1996-06-07 Kyocera Corp 半導体装置の製造方法
JPH08153843A (ja) * 1994-11-29 1996-06-11 Furukawa Electric Co Ltd:The 半導体チップ実装用リードフレーム
JPH09275182A (ja) 1996-04-02 1997-10-21 Seiichi Serizawa 半導体装置用リ−ドフレ−ム
US5684329A (en) * 1996-04-02 1997-11-04 Serizawa; Seiichi Lead frame for semiconductor device
JPH1038918A (ja) 1996-07-19 1998-02-13 Denki Kagaku Kogyo Kk プローブピン及びそれを有するコンタクター
JPH09232057A (ja) 1996-08-07 1997-09-05 Enplas Corp Ｉｃソケット
US6521358B1 (en) * 1997-03-04 2003-02-18 Matsushita Electric Industrial Co., Ltd. Lead frame for semiconductor device and method of producing same
JPH118340A (ja) * 1997-06-18 1999-01-12 Dainippon Printing Co Ltd 半導体装置用リードフレームとその製造方法
JPH11111909A (ja) * 1997-10-07 1999-04-23 Seiichi Serizawa 半導体装置用リードフレーム
JP2000252402A (ja) 1999-03-04 2000-09-14 Hitachi Ltd 半導体装置、半導体装置の実装方法及び電子装置
JP2000286542A (ja) * 1999-03-31 2000-10-13 Harima Chem Inc 半田付け方法及び半田付け基材
JP2000348793A (ja) 1999-06-07 2000-12-15 Shin Etsu Polymer Co Ltd 電気コネクタ
JP2001056347A (ja) 1999-08-20 2001-02-27 Hoya Corp コンタクト部品及びその製造方法
JP2002298966A (ja) 2001-03-30 2002-10-11 Takamasa Yoshimura 高耐久性コンタクト
WO2003027689A1 (en) 2001-09-24 2003-04-03 Rika Electronics International Electrical test probes and methods of making the same
JP2003149267A (ja) 2001-11-07 2003-05-21 Sumitomo Electric Ind Ltd 半導体素子の電気、電子特性測定用端子およびその製造方法
JP2004093355A (ja) 2002-08-30 2004-03-25 Toshiba Corp Ｐｄ合金系プローブピンおよびそれを用いたプローブピン装置
JP2004245669A (ja) 2003-02-13 2004-09-02 Seiko Epson Corp プローブカード及びその製造方法、プローブ装置、プローブ試験方法、半導体装置の製造方法
US20050006976A1 (en) * 2003-07-11 2005-01-13 Ryouichi Someya Commutating device for small-sized motor and manufacturing method therefor
US20050145997A1 (en) * 2003-11-28 2005-07-07 Isabell Buresch Layer sequence for producing a composite material for electromechanical components
US20050233566A1 (en) * 2004-04-16 2005-10-20 Paek Sung-Kwan Lead frame and method of manufacturing the same
US8016624B2 (en) 2005-09-22 2011-09-13 Enplas Corporation Electric contact and socket for electrical part
JP5334416B2 (ja) 2005-09-22 2013-11-06 株式会社エンプラス 電気接触子及び電気部品用ソケット
US20100163276A1 (en) * 2007-03-27 2010-07-01 Suguru Yamaguchi Silver-coated material for movable contact component and method for manufacturing such silver-coated material
US20100186993A1 (en) * 2007-03-27 2010-07-29 Suguru Yamaguchi Silver-coated material for movable contact component and method for manufacturing such silver-coated material

Non-Patent Citations (20)

* Cited by examiner, † Cited by third party
Title
Abstract for DD 283236 A. Published Oct. 1990. *
International Preliminary Report on Patentability, mailed Apr. 3, 2008 and issued in corresponding International Patent Application No. PCT/JP2006/318870.
International Search Report of the International Application No. PCT/JP2006/318870 (mailed Jan. 9, 2007).
Issue Notification mailed Aug. 24, 2011 in U.S. Appl. No. 11/719,465.
Japanese Office Action dispatched Apr. 15, 2014 in corresponding Japanese Patent Application No. 2012-154077.
Japanese Office Action dispatched Apr. 30, 2014 in corresponding Japanese Patent Application No. 2012-154077.
Japanese Office Action dispatched Jul. 1, 2014 in corresponding Japanese Patent Application No. 2012-154077.
Japanese Office Action issued Jul. 23, 2013 in corresponding Japanese Application No. 2012-154077.
Japanese Office Action issued May 8, 2012 in corresponding Japanese Application No. 2007-536579.
Japanese Office Action issued Nov. 20, 2012 in corresponding Japanese Application No. 2007-536579.
Notice of Acceptance of Application mailed Mar. 5, 2008 in U.S. Appl. No. 11/719,465.
Notice of Allowance mailed May 25, 2011 in U.S. Appl. No. 11/719,465.
Notification of Submission of Information dated Dec. 11, 2013 in corresponding Japanese Patent Application No. 2012-154077.
Office Action mailed Feb. 7, 2011 in U.S. Appl. No. 11/719,465.
Office Action mailed Jun. 9, 2010 in U.S. Appl. No. 11/719,465.
Office Action mailed Mar. 1, 2011 in U.S. Appl. No. 11/719,465.
Office Action mailed Mar. 15, 2010 in U.S. Appl. No. 11/719,465.
Office Action mailed Nov. 18, 2010 in U.S. Appl. No. 11/719,465.
Patent Abstract of Japan, Publication No. 2005-504962, Published Feb. 17, 2005.
Translation of JP 11/111909. Apr. 1999. *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160276768A1 (en) * 2013-12-04 2016-09-22 Autonetworks Technologies, Ltd. Electric contact and connector terminal pair
US9692162B2 (en) * 2013-12-04 2017-06-27 Autonetworks Technologies, Ltd. Electric contact and connector terminal pair
US20150333415A1 (en) * 2014-05-19 2015-11-19 Yazaki Corporation Minute current crimping terminal and minute current wire harness
US9666956B2 (en) * 2014-05-19 2017-05-30 Yazaki Corporation Minute current crimping terminal and minute current wire harness

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US8016624B2 (en) 2011-09-13
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