USD720308S1 - Inner tube for process tube for manufacturing semiconductor wafers - Google Patents

Inner tube for process tube for manufacturing semiconductor wafers Download PDF

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Publication number
USD720308S1
USD720308S1 US29/420,536 US201229420536F USD720308S US D720308 S1 USD720308 S1 US D720308S1 US 201229420536 F US201229420536 F US 201229420536F US D720308 S USD720308 S US D720308S
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US
United States
Prior art keywords
tube
semiconductor wafers
manufacturing semiconductor
inner tube
process tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
US29/420,536
Inventor
Hirofumi Kaneko
Atsushi Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Assigned to TOKYO ELECTRON LIMITED reassignment TOKYO ELECTRON LIMITED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KANEKO, HIROFUMI, ENDO, ATSUSHI
Application granted granted Critical
Publication of USD720308S1 publication Critical patent/USD720308S1/en
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FIG. 1 is a perspective view of an inner tube for process tube for manufacturing semiconductor wafers showing our new design;
FIG. 2 is a front view thereof;
FIG. 3 is a rear view thereof;
FIG. 4 is a right side thereof;
FIG. 5 is a left side view thereof;
FIG. 6 is a top plan view thereof;
FIG. 7 is a bottom plan view thereof;
FIG. 8 is an enlarged cross-sectional view taken along line 8-8 of FIG. 2; and,
FIG. 9 is another front view thereof, shown in a used condition.
The broken lines shown in the drawings represent portions of the inner tube for process tube for manufacturing semiconductor wafers that form no part of the claimed design.

Claims (1)

    CLAIM
  1. The ornamental design for an inner tube for process tube for manufacturing semiconductor wafers, as shown and described.
US29/420,536 2011-11-18 2012-05-10 Inner tube for process tube for manufacturing semiconductor wafers Active USD720308S1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011026685 2011-11-18
JP2011-026685 2011-11-18

Publications (1)

Publication Number Publication Date
USD720308S1 true USD720308S1 (en) 2014-12-30

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ID=52112856

Family Applications (1)

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US29/420,536 Active USD720308S1 (en) 2011-11-18 2012-05-10 Inner tube for process tube for manufacturing semiconductor wafers

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US (1) USD720308S1 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD742339S1 (en) * 2014-03-12 2015-11-03 Hitachi Kokusai Electric Inc. Reaction tube
USD748594S1 (en) * 2014-03-12 2016-02-02 Hitachi Kokusai Electric Inc. Reaction tube
USD853979S1 (en) * 2017-12-27 2019-07-16 Kokusai Electric Corporation Reaction tube
USD1019582S1 (en) * 2022-05-30 2024-03-26 Kokusai Electric Corporation Inner tube of reaction tube for semiconductor manufacturing equipment
USD1019581S1 (en) * 2022-05-30 2024-03-26 Kokusai Electric Corporation Inner tube of reaction tube for semiconductor manufacturing equipment
USD1019583S1 (en) * 2022-05-30 2024-03-26 Kokusai Electric Corporation Inner tube of reaction tube for semiconductor manufacturing equipment

Citations (31)

* Cited by examiner, † Cited by third party
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US4950870A (en) * 1987-11-21 1990-08-21 Tel Sagami Limited Heat-treating apparatus
US5037502A (en) * 1983-12-29 1991-08-06 Sharp Kabushiki Kaisha Process for producing a single-crystal substrate of silicon carbide
US5352293A (en) * 1992-01-06 1994-10-04 Samsung Electronics Co., Ltd. Tube apparatus for manufacturing semiconductor device
US5618349A (en) * 1993-07-24 1997-04-08 Yamaha Corporation Thermal treatment with enhanced intra-wafer, intra-and inter-batch uniformity
USD404368S (en) * 1997-08-20 1999-01-19 Tokyo Electron Limited Outer tube for use in a semiconductor wafer heat processing apparatus
USD405062S (en) * 1997-08-20 1999-02-02 Tokyo Electron Ltd. Processing tube for use in a semiconductor wafer heat processing apparatus
USD405429S (en) * 1997-01-31 1999-02-09 Tokyo Electron Limited Processing tube for use in a semiconductor wafer heat processing apparatus
USD405431S (en) * 1997-08-20 1999-02-09 Tokyo Electron Ltd. Tube for use in a semiconductor wafer heat processing apparatus
USD406113S (en) * 1997-01-31 1999-02-23 Tokyo Electron Limited Processing tube for use in a semiconductor wafer heat processing apparatus
US5897311A (en) * 1995-05-31 1999-04-27 Tokyo Electron Limited Support boat for objects to be processed
US5948300A (en) * 1997-09-12 1999-09-07 Kokusai Bti Corporation Process tube with in-situ gas preheating
US5968593A (en) * 1995-03-20 1999-10-19 Kokusai Electric Co., Ltd. Semiconductor manufacturing apparatus
USD417438S (en) * 1997-01-31 1999-12-07 Tokyo Electron Limited Quartz outer tube
USD423463S (en) * 1997-01-31 2000-04-25 Tokyo Electron Limited Quartz process tube
USD424024S (en) * 1997-01-31 2000-05-02 Tokyo Electron Limited Quartz process tube
US6251189B1 (en) * 1999-02-18 2001-06-26 Kokusai Electric Co., Ltd. Substrate processing apparatus and substrate processing method
US20020014483A1 (en) * 2000-07-06 2002-02-07 Fujio Suzuki Batch type heat treatment system, method for controlling same, and heat treatment method
US6402849B2 (en) * 2000-03-17 2002-06-11 Samsung Electronics Co., Ltd. Process tube having slit type process gas injection portion and hole type waste gas exhaust portion, and apparatus for fabricating semiconductor device
US20030221779A1 (en) * 2002-03-28 2003-12-04 Kazuyuki Okuda Substrate processing apparatus
USD521464S1 (en) * 2003-11-04 2006-05-23 Tokyo Electron Limited Process tube for semiconductor device manufacturing apparatus
USD521465S1 (en) * 2003-11-04 2006-05-23 Tokyo Electron Limited Process tube for semiconductor device manufacturing apparatus
USD552047S1 (en) * 2005-02-28 2007-10-02 Tokyo Electron Limited Process tube for manufacturing semiconductor wafers
USD556704S1 (en) * 2005-08-25 2007-12-04 Hitachi High-Technologies Corporation Grounded electrode for a plasma processing apparatus
US7311520B2 (en) * 2002-09-24 2007-12-25 Tokyo Electron Limited Heat treatment apparatus
US20080083372A1 (en) * 2006-08-04 2008-04-10 Hisashi Inoue Heat processing apparatus for semiconductor process
US20080132079A1 (en) * 2006-10-04 2008-06-05 Mitsuhiro Okada Film formation apparatus and method for using the same
USD586768S1 (en) * 2006-10-12 2009-02-17 Tokyo Electron Limited Process tube for manufacturing semiconductor wafers
USD600659S1 (en) * 2006-09-12 2009-09-22 Tokyo Electron Limited Process tube for manufacturing semiconductor wafers
USD611013S1 (en) * 2008-03-28 2010-03-02 Tokyo Electron Limited Process tube for manufacturing semiconductor wafers
USD618638S1 (en) * 2008-05-09 2010-06-29 Hitachi Kokusai Electric, Inc. Reaction tube
USD619630S1 (en) * 2007-05-08 2010-07-13 Tokyo Electron Limited Process tube for manufacturing semiconductor wafers

Patent Citations (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5037502A (en) * 1983-12-29 1991-08-06 Sharp Kabushiki Kaisha Process for producing a single-crystal substrate of silicon carbide
US4950870A (en) * 1987-11-21 1990-08-21 Tel Sagami Limited Heat-treating apparatus
US5352293A (en) * 1992-01-06 1994-10-04 Samsung Electronics Co., Ltd. Tube apparatus for manufacturing semiconductor device
US5618349A (en) * 1993-07-24 1997-04-08 Yamaha Corporation Thermal treatment with enhanced intra-wafer, intra-and inter-batch uniformity
US5968593A (en) * 1995-03-20 1999-10-19 Kokusai Electric Co., Ltd. Semiconductor manufacturing apparatus
US5897311A (en) * 1995-05-31 1999-04-27 Tokyo Electron Limited Support boat for objects to be processed
USD424024S (en) * 1997-01-31 2000-05-02 Tokyo Electron Limited Quartz process tube
USD423463S (en) * 1997-01-31 2000-04-25 Tokyo Electron Limited Quartz process tube
USD405429S (en) * 1997-01-31 1999-02-09 Tokyo Electron Limited Processing tube for use in a semiconductor wafer heat processing apparatus
USD406113S (en) * 1997-01-31 1999-02-23 Tokyo Electron Limited Processing tube for use in a semiconductor wafer heat processing apparatus
USD417438S (en) * 1997-01-31 1999-12-07 Tokyo Electron Limited Quartz outer tube
USD405431S (en) * 1997-08-20 1999-02-09 Tokyo Electron Ltd. Tube for use in a semiconductor wafer heat processing apparatus
USD405062S (en) * 1997-08-20 1999-02-02 Tokyo Electron Ltd. Processing tube for use in a semiconductor wafer heat processing apparatus
USD404368S (en) * 1997-08-20 1999-01-19 Tokyo Electron Limited Outer tube for use in a semiconductor wafer heat processing apparatus
US5948300A (en) * 1997-09-12 1999-09-07 Kokusai Bti Corporation Process tube with in-situ gas preheating
US6251189B1 (en) * 1999-02-18 2001-06-26 Kokusai Electric Co., Ltd. Substrate processing apparatus and substrate processing method
US6402849B2 (en) * 2000-03-17 2002-06-11 Samsung Electronics Co., Ltd. Process tube having slit type process gas injection portion and hole type waste gas exhaust portion, and apparatus for fabricating semiconductor device
US20020014483A1 (en) * 2000-07-06 2002-02-07 Fujio Suzuki Batch type heat treatment system, method for controlling same, and heat treatment method
US20030221779A1 (en) * 2002-03-28 2003-12-04 Kazuyuki Okuda Substrate processing apparatus
US7311520B2 (en) * 2002-09-24 2007-12-25 Tokyo Electron Limited Heat treatment apparatus
USD521465S1 (en) * 2003-11-04 2006-05-23 Tokyo Electron Limited Process tube for semiconductor device manufacturing apparatus
USD521464S1 (en) * 2003-11-04 2006-05-23 Tokyo Electron Limited Process tube for semiconductor device manufacturing apparatus
USD552047S1 (en) * 2005-02-28 2007-10-02 Tokyo Electron Limited Process tube for manufacturing semiconductor wafers
USD556704S1 (en) * 2005-08-25 2007-12-04 Hitachi High-Technologies Corporation Grounded electrode for a plasma processing apparatus
US20080083372A1 (en) * 2006-08-04 2008-04-10 Hisashi Inoue Heat processing apparatus for semiconductor process
USD600659S1 (en) * 2006-09-12 2009-09-22 Tokyo Electron Limited Process tube for manufacturing semiconductor wafers
US20080132079A1 (en) * 2006-10-04 2008-06-05 Mitsuhiro Okada Film formation apparatus and method for using the same
USD586768S1 (en) * 2006-10-12 2009-02-17 Tokyo Electron Limited Process tube for manufacturing semiconductor wafers
USD619630S1 (en) * 2007-05-08 2010-07-13 Tokyo Electron Limited Process tube for manufacturing semiconductor wafers
USD611013S1 (en) * 2008-03-28 2010-03-02 Tokyo Electron Limited Process tube for manufacturing semiconductor wafers
USD618638S1 (en) * 2008-05-09 2010-06-29 Hitachi Kokusai Electric, Inc. Reaction tube

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD742339S1 (en) * 2014-03-12 2015-11-03 Hitachi Kokusai Electric Inc. Reaction tube
USD748594S1 (en) * 2014-03-12 2016-02-02 Hitachi Kokusai Electric Inc. Reaction tube
USD853979S1 (en) * 2017-12-27 2019-07-16 Kokusai Electric Corporation Reaction tube
USD1019582S1 (en) * 2022-05-30 2024-03-26 Kokusai Electric Corporation Inner tube of reaction tube for semiconductor manufacturing equipment
USD1019581S1 (en) * 2022-05-30 2024-03-26 Kokusai Electric Corporation Inner tube of reaction tube for semiconductor manufacturing equipment
USD1019583S1 (en) * 2022-05-30 2024-03-26 Kokusai Electric Corporation Inner tube of reaction tube for semiconductor manufacturing equipment

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