US9691914B2 - Optical sensor device - Google Patents

Optical sensor device Download PDF

Info

Publication number
US9691914B2
US9691914B2 US15/117,077 US201515117077A US9691914B2 US 9691914 B2 US9691914 B2 US 9691914B2 US 201515117077 A US201515117077 A US 201515117077A US 9691914 B2 US9691914 B2 US 9691914B2
Authority
US
United States
Prior art keywords
phosphate
based glass
glass
optical sensor
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
US15/117,077
Other languages
English (en)
Other versions
US20160351731A1 (en
Inventor
Koji Tsukagoshi
Noriyoshi HIGASHI
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ablic Inc
Original Assignee
Ablic Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ablic Inc filed Critical Ablic Inc
Assigned to SII SEMICONDUCTOR CORPORATION reassignment SII SEMICONDUCTOR CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HIGASHI, Noriyoshi
Assigned to SII SEMICONDUCTOR CORPORATION reassignment SII SEMICONDUCTOR CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: TSUKAGOSHI, KOJI
Publication of US20160351731A1 publication Critical patent/US20160351731A1/en
Application granted granted Critical
Publication of US9691914B2 publication Critical patent/US9691914B2/en
Assigned to ABLIC INC. reassignment ABLIC INC. CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: SII SEMICONDUCTOR CORPORATION
Assigned to ABLIC INC. reassignment ABLIC INC. CHANGE OF ADDRESS Assignors: ABLIC INC.
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/12—Silica-free oxide glass compositions
    • C03C3/16—Silica-free oxide glass compositions containing phosphorus
    • C03C3/21—Silica-free oxide glass compositions containing phosphorus containing titanium, zirconium, vanadium, tungsten or molybdenum
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00012—Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present invention relates to an optical sensor device using phosphate-based glass.
  • a sensor In recent living environments, convenience has been further improved by electronics, household electric appliances, in-vehicle devices, and the like which are equipped with a new function that is not found in the related art.
  • sensor functions which compensates the five senses of human beings, are a large portion. Increases in the number of these products have been significantly expected in a wide range of fields.
  • Examples of a sensor include various sensors using a semiconductor, and various sensors including a pressure sensor, a flow rate sensor, a motion sensor, a luminance sensor, a distance measurement sensor, and the like have been made into products.
  • an optical sensor including the luminance sensor has been frequently used, and has been spreading widely due to an increase in mounting on an illuminating device for an office or a house, a portable terminal, a computer, and the like for use accompanied with low power consumption.
  • Products, on which the sensor component is mounted have characteristics in which diversification of application, abundance of functions, and a design excellent in portability are favorable.
  • a reduction in size, thickness, and cost, and high reliability are required in the products without exception.
  • a requirement for a package occupies a large portion. According to this, in development of the package, application of the related art or of new technologies has become increasingly important.
  • FIG. 7 is an example of a cross-sectional view of a packaged optical sensor.
  • An optical sensor element 24 is mounted on an insulating substrate 22 on which an interconnection pattern 21 is formed through metallization, and a light-transmitting epoxy resin 29 is molded at the periphery of the optical sensor element 24 (FIG. 2 of Patent Document 1).
  • the periphery of the optical sensor element is molded with the light-transmitting epoxy resin, and a resin 23 , which uses a composition of blocking an infrared light beam, is provided in a layer shape to overlap a flat surface of an outer surface of the light-transmitting epoxy resin in a layer shape in an immediate upward direction of the optical sensor element.
  • a light-receiving sensor element As the optical sensor element 24 that is mounted, a light-receiving sensor element is used.
  • the interconnection pattern 21 which is obtained through metallization, is electrically connected to an electrode provided on an upper surface of the optical sensor element 24 through a wire 25 , and is used as a connection terminal with an outer side.
  • An electromotive force which is generated by a light beam that is incident to the light-receiving sensor element, is transmitted to an external connection terminal through the wire 25 .
  • Light beams which are incident from an outer side in an immediate upward direction of the optical sensor element, are transmitted through the light-transmitting epoxy resin after an infrared light beam is blocked by the resin 23 , and thus the optical sensor element is sensitive to light beams in a manner close to spectral luminous efficacy properties specific to human beings.
  • the resin having a composition of blocking an infrared light beam is provided on the outer surface of the light-transmitting resin that molds the periphery of the element only in the immediate upward direction of the element. Therefore, with respect to light beams which are incident from an oblique direction, or light beams which are incident from a lateral direction, it is difficult to block the infrared light beam, and it is difficult for the element to receive light beams having characteristics on which the spectral luminous efficacy properties are reflected. According to this, it is difficult to obtain sufficient spectral luminous efficacy properties with respect to light beams which are incident from the lateral direction or the oblique direction. As a result, it is difficult to obtain high light reception characteristics.
  • the package has a structure in which the periphery of the element is molded only with the light-transmitting transparent epoxy resin.
  • the light-transmitting transparent epoxy resin is weak to heat and moisture.
  • the transmittance decreases. Therefore, light beams incident from an outer side are attenuated.
  • an intensity of the light received by the optical sensor element decreases, and this decrease leads to deterioration in light reception sensitivity.
  • the resin becomes brittle due to heat and peeling-off or cracking is likely to occur between the resin and the element.
  • light beams incident from an outer side are attenuated, and this leads to a decrease in the optical intensity of the element, and a deterioration in the light reception sensitivity.
  • the light-transmitting transparent epoxy resin is likely to swell due to the effect of moisture, and the strength of the swelled resin is likely to decrease, Accordingly, there is a concern of the molded resin being deformed or broken due to impact from an outer side.
  • the adhesiveness of the resin is likely to decrease due to an effect of moisture, and the moisture is likely to intrude from an interface between the resin and the element. In a case where moisture is interposed between adhesive surfaces of the resin and the element, the adhesiveness of the resin significantly decreases, and this leads to occurrence of interface peeling-off between the element and the resin.
  • moisture rapidly evaporates.
  • the resin which is provided on an outer surfaced of the light-transmitting transparent mold resin to block an infrared light beam is also a resin-based dye. Accordingly, there is a concern that a decrease in characteristics of the resin is also likely to occur due to heat or moisture. Particularly, in a case of the resin provided with specific properties of blocking an infrared light beams due to a composition or a structure of the resin, it is typically pointed out that characteristics tend to be unstable due to occurrence of leakage of the dye with respect to external factors such as heat and moisture.
  • the thickness of the mold resin further decreases. According to this, the peeling-off of the resin, the cracking, the discoloration, and the like are further likely to occur, and a decrease in mechanical strength or easiness of deformation also occurs. As a result, the reliability of the package is further likely to deteriorate.
  • a method of obtaining spectral luminous efficacy properties by using a material other than the resin, or a package having a hollow structure in which the periphery of the element is not molded with the resin have been partially put into practical use.
  • the method of obtaining the spectral luminous efficacy properties by using a material having a reliability higher than that of the resin-based dye a variation in the spectral luminous efficacy properties and a decrease in light reception sensitivity of the element due to resin factors, such as deterioration, peeling-off, and cracking of the resin, disappear. As a result, the stability of the characteristics over a long period of time is realized.
  • the element when employing the hollow structure in which molding of the periphery of the element with the resin is not performed, the element does not receive a stress due to the resin. Accordingly, it is possible to remove a factor which greatly damages a function relating to a product, such as stress damage on the element and wire disconnection. As a result, it is possible to realize a package with high reliability.
  • Patent Document 1 Japanese Unexamined Patent Application, First Publication No. 2007-36264
  • an object of the invention is to newly manufacture glass of a composition having high reliability and spectral luminous efficacy properties, and to provide a highly reliable optical sensor device that has a hollow structure and is capable of being miniaturized as a package by using the new glass that is obtained.
  • an optical sensor device constituted by a package includes a lid member that is formed by using phosphate-based glass having the spectral luminous efficacy properties provided through adjustment to a specific composition, and an element-mounting portion having a cavity covered with the lid member.
  • the lid member has a structure in which phosphate-based glass having the spectral luminous efficacy properties is disposed at a portion immediately over an element that is mounted on the element-mounting portion, and the periphery of the phosphate-based glass is constituted by phosphate-based glass having light-shielding properties of absorbing light beams including an ultraviolet light beam, a visible light beam, and an infrared light beam in an absorbance of 2% or less.
  • the lid member has a structure in which the central portion of the phosphate-based glass having the light-shielding properties and a wafer shape is opened in advance.
  • individual pieces of phosphate-based glass having the spectral luminous efficacy properties are embedded in the opened site, and are melted and integrated to obtain a laminated glass member, thereby obtaining the lid member.
  • phosphate-based glass having the spectral luminous efficacy properties phosphate-based glass having transmittance characteristics, in which a central peak of a transmittance is in a wavelength range of 540 nm to 560 nm, the transmittance in a wavelength range of 700 nm to 1200 nm is 2% or less, and the transmittance in a wavelength range of 300 nm to 430 nm is 3% or less, may be used.
  • phosphate-based glass having the light-shielding properties phosphate-based glass having transmittance characteristics in which the transmittance in a wavelength range of 300 nm to 1200 nm is 2% or less is used.
  • a member formed from resin, ceramic, metal, or glass may be used.
  • the lid member in which the phosphate-based glass having the spectral luminous efficacy properties and the phosphate-based glass having the light-shielding properties are integrated together is used. Accordingly, it is possible to realize a highly reliable package capable of continuously obtaining stable spectral luminous efficacy properties that is less susceptible to the effect of an environment with ambient heat and moisture.
  • the lid member has a structure in which the phosphate-based glass having the spectral luminous efficacy properties is combined to the wafer-shaped phosphate-based glass having the light-shielding properties, and the phosphate-based glass having the spectral luminous efficacy properties is disposed in an immediate upward direction of an element.
  • the phosphate-based glass having the spectral luminous efficacy properties has transmittance characteristics in which the central peak of transmittance is in a wavelength range of 540 nm.
  • the transmittance in a wavelength range of 700 nm to 1200 nm is 2% or less
  • the transmittance in a wavelength range of 300 nm to 430 nm is 3% or less
  • individual, pieces of the phosphate-based glass are embedded in the phosphate-based glass having the light-shielding properties.
  • the phosphate-based glass having the light-shielding properties is constituted by wafer-shaped glass having transmittance characteristics in which the transmittance in a wavelength range of 300 nm to 1200 nm is 2% or less.
  • the phosphate-based glass having the light-shielding properties has a structure in which an opened site is provided in advance, and the individual pieces of the phosphate-based glass having the spectral luminous efficacy properties can be embedded in the opened site.
  • compositions of the phosphate-based glass having the spectral luminous efficacy properties and the phosphate-based glass having the light-shielding properties are adjusted to specific compositions so as to obtain light-transmitting characteristics.
  • the coefficients of expansion thereof can be made to be equal to each other, and strong reliability with respect to weather resistance such as high-temperature and high-humidity is provided.
  • a light beam which passes through the phosphate-based glass having the spectral luminous efficacy properties, is incident to an element.
  • light beams, which are incident from a wider angle direction in comparison to the oblique direction are completely shielded by the phosphate-based glass having the light-shielding properties.
  • the element can stably receive light beams with which the spectral luminous efficacy properties are obtained.
  • the glass composition has high weather resistance in which a hydrate is less likely to be generated. As a result, it is possible to provide an optical sensor device with high reliability.
  • FIG. 1 is a cross-sectional view schematically showing a configuration of a semiconductor device of the invention.
  • FIG. 2 is a front elevation view schematically showing a configuration of the semiconductor device of the invention.
  • FIG. 3 is a cross-sectional view schematically showing a configuration of the semiconductor device of the invention.
  • FIG. 4 is a cross-sectional view schematically showing a configuration of the semiconductor device of the invention.
  • FIG. 5 is a cross-sectional view schematically showing a configuration of the semiconductor device of the invention.
  • FIG. 6 is a view showing spectrum characteristics of the semiconductor device of the invention.
  • FIG. 7 is a cross-sectional view schematically showing a configuration of a semiconductor device of the related art.
  • An optical sensor device of the invention has the following structure.
  • a lid member is obtained by embedding one of two kinds of phosphate-based glass having light-transmitting characteristics different from each other through composition adjustment in the other in combination with each other, an element-mounting portion has a cavity, and an element is stuck to the element-mounting portion with an adhesive.
  • An electrode provided on an upper surface of the element is electrically connected to an interconnection surface on which the element is not mounted through a wire. The element is fixed to be surrounded by the element-mounting portion having the cavity.
  • FIG. 1 schematically shows a cross-sectional configuration of the optical sensor device of the invention.
  • the lid member is constituted by the two kinds of phosphate-based glass having optical characteristics different from each other through adjustment to a specific composition.
  • a window constituted by phosphate-based glass having the spectral luminous efficacy properties is located in an immediate upward direction of the element-mounting portion, and a frame constituted by phosphate-based glass having light-shielding properties is located at the periphery of the window.
  • An opened site is provided in the phosphate-based glass that has a wafer shape and the light-shielding properties in advance, and the phosphate-based glass having the spectral luminous efficacy properties is embedded in the opened site to be integrally formed.
  • a composition of the phosphate-based glass having the spectral luminous efficacy properties contains, in terms of % by weight,
  • composition of the phosphate-based glass having the light-shielding properties contains, in terms of % by weight,
  • compositions the spectral luminous efficacy properties, the light-shielding characteristics, and weather resistance, which are higher than those in phosphate-based glass of the related art, are provided.
  • the phosphate-based glass having the spectral luminous efficacy properties are composed of individual pieces and the opened site is provided in the wafer-shaped phosphate-based glass having the light-shielding properties.
  • the individual pieces of phosphate-based glass are embedded in the opened site, and are heated to constitute a melt-integrated laminated glass member.
  • a member that is formed from resin, ceramic, metal, glass, or silicon is used.
  • the element-mounting portion having the cavity has a hollow structure in which an upper surface of the cavity and the glass lid member are closely attached to each other.
  • FIG. 1 is a schematic diagram of an optical sensor device 12 of this example.
  • FIG. 1 is a longitudinal cross-sectional view of the optical sensor device 12 .
  • FIG. 2 is a front elevation view of the optical sensor device 12 .
  • a hollow structure is obtained by closely attaching a lid member, in which a window 2 constituted by first phosphate-based glass having the spectral luminous efficacy properties is introduced into a frame 1 that surrounds the periphery of the window 2 and is constituted by second phosphate-based glass having light-shielding properties to be integrally formed as a laminated glass member, to an upper surface of the element-mounting portion 3 having a cavity.
  • the element-mounting portion 3 having the cavity has a structure in which lead frames 6 a and 6 b is fitted into the element-mounting portion 3 .
  • a surface of a part of the lead frames 6 a and 6 b on one side is exposed to a bottom portion of the cavity, and a part on the other side is exposed to an outer side through the cavity and functions as an external terminal.
  • An element mount portion is provided to the cavity bottom portion, and an element 4 is stuck to the center of the element mount portion with an adhesive 7 .
  • the lid member that is constituted by the phosphate-based glass includes the window 2 constituted by the first phosphate-based glass having the spectral luminous efficacy properties, and the frame 1 constituted by the second phosphate-based glass having the light-shielding properties.
  • the lid member has a structure in which an opened site is provided in wafer-shaped phosphate-based glass in advance, and individual pieces of phosphate-based glass are embedded in the opened site.
  • the first phosphate-based glass that constitutes the window 2 has the following spectral luminous efficacy properties, and a composition thereof contains, in terms of % by weight,
  • spectral luminous efficacy properties in which the central peak of a transmittance is in a wavelength range of 540 nm to 560 nm, the transmittance in a wavelength range of 700 nm to 1200 nm is 2% or less, and the transmittance in a wavelength range of 300 nm to 430 nm is 3% or less.
  • FIG. 6 shows spectrums of the spectral luminous efficacy properties which are obtained.
  • the second phosphate-based glass that constitutes the frame 1 is intended to have light-shielding characteristics in which the transmittance in a wavelength range of 300 nm to 1200 nm is 2% or less, and a composition thereof contains, in terms of % by weight,
  • the lid member has the following structure.
  • the window 2 which has a dimension equal to or less than an inner diameter of an upper portion of the cavity and is constituted by the first phosphate-based glass, is disposed at and introduced to the central portion in an immediate upward direction of the optical sensor element 4 that is mounted on the center of the bottom portion of the element-mounting portion 3 having the cavity.
  • the optical sensor element can receive light beams through the window 2 constituted by the phosphate-based glass having the spectral luminous efficacy properties
  • an opened site is provided in the second phosphate-based glass having a wafer shape and the light-shielding properties, and the first phosphate-based glass having the spectral luminous efficacy properties is embedded in the second phosphate-based glass to obtain a melted and integrated laminated glass member.
  • a cut-out surface which occurs in a case of being divided into individual pieces, disappears in the window 2 constituted by the first phosphate-based glass having the spectral luminous efficacy properties. A minute concavo-convexity exists in the cut-out surface.
  • the opened site which is provided in the wafer-shaped second phosphate-based glass having the light-shielding properties, is obtained as follows. Light-shielding glass in a wafer state is placed on a mold provided with a convex portion, and is put into a softening temperature atmosphere in a state in which a load is applied to the glass. After extraction, the light-shielding glass, in which a concave portion is formed, is polished to provide the opened site. In another way, a mask is provided on the light-shielding glass in a wafer state, and etching is performed in a state in which a portion to be the opened site is exposed, thereby providing the opened site.
  • a surface of the opened site which is exposed in a thickness direction, does not become a fracture surface, and a minute concavo-convexity like a cut-out surface also does not remain on the exposed surface. According to this, air is less likely to intrude into an interface when embedding the first phosphate-based glass 2 having the spectral luminous efficacy properties.
  • an ingot is made into a wafer state through dicing or by using a wire saw, and then the wafer is divided into individual pieces in a size capable of being accommodated in the opened site through the dicing or by using the wire saw.
  • the individual pieces of phosphate-based glass having the spectral luminous efficacy properties are provided in the opened site provided in the wafer-shaped phosphate-based glass having the light-shielding properties, and are put into the softening temperature atmosphere in a state a load is applied to the glass.
  • the phosphate-based glass having the light-shielding properties and the phosphate-based glass having the spectral luminous efficacy properties are in a temperature range close to the softening temperature, and a load is applied thereto. Accordingly, the glass is gradually deformed and flows into the opened site in a gradually softened state, and thus melting integration can be obtained.
  • the phosphate-based glass having the spectral luminous efficacy properties is divided into individual pieces from the wafer state through dicing or by using a wire saw, and the individual pieces are put into an atmosphere that is set to appropriately the lower limit of a softening temperature, a concavo-convex, chipping, and the like, which remain on a processing surface, can be mitigated. As a result, it is possible to improve air-tightness in a glass interface during embedding.
  • the lid member is constituted by glass
  • the lid member has higher reliability with respect to an environment such as heat and moisture in comparison to the lid member is constituted by a resin and the like. According to this, a variation in characteristics may not occur for a long period of time.
  • the degree of freedom is high. Accordingly, in a case of designing the package to have a small thickness or a small size, it is possible to easily cope with the case through adjustment of grinding thickness of the glass, or through changing of dimensions during division into individual pieces.
  • FIG. 3 is a cross-sectional view of an optical sensor device 12 of this example.
  • the structure of the optical sensor device of FIG. 1 which includes the element-mounting portion 3 having the cavity, and the lid member having a structure in which the frame 1 constituted by the phosphate-based glass having the light-shielding properties and the window 2 that is embedded in the opened site of the frame 1 and is constituted by the phosphate-based glass having the spectral luminous efficacy properties
  • an element-mounting portion, to which the optical sensor element 4 is stuck with an adhesive is constituted by a mount portion 11 formed from a material having heat dissipation properties, and the mount portion 11 has a shape in which a rear surface opposite to a surface onto which the element 4 is stuck is exposed to an outer side.
  • FIG. 4 is a cross-sectional view of an optical sensor device 12 of this example.
  • the optical sensor device 12 has a hollow structure constituted by the element-mounting portion 3 having the cavity, and a glass lid member.
  • the glass lid member is a closely attached lid member, and includes the frame 1 constituted by the phosphate-based glass having the light-shielding properties, and a window that is introduced into the opened site formed in the frame 1 and is constituted by phosphate glass.
  • Phosphate-based glass 9 that absorbs light beams in an infrared wavelength region in which the transmittance in a wavelength range of 700 nm to 1200 nm is 2% or less, and phosphate-based glass 10 that absorbs light beams in a ultraviolet wavelength region in which the transmittance in a wavelength range of 300 nm to 430 nm is 3% or less are superimposed on each other, and the resultant superimposed glass is divided into individual pieces.
  • the individual pieces of glass are introduced into the window, and the individual pieces, of glass and the frame are integrally formed as a laminated glass member.
  • the lid member constituted by the phosphate-based glass include the glass having a structure in which the phosphate-based glass 9 that absorbs light beams in an infrared wavelength region, and the phosphate-based glass 10 that absorbs light beams in a ultraviolet wavelength region are superimposed on each other, and the frame 1 constituted by the phosphate-based glass having the light-shielding properties.
  • An opened site is provided in advance in the frame constituted by the phosphate-based glass having the light-shielding properties, and individual pieces of the phosphate-based glass 9 and the phosphate-based glass 10 which are superimposed on each other are embedded in the opened site
  • a sequence of superimposing the phosphate-based glass 9 and the phosphate-based glass 10 is not particularly limited.
  • the phosphate-based glass 9 is intended to absorb light beams in an infrared wavelength region, and the transmittance in a wavelength range of 700 nm to 1200 nm is 2% or less.
  • a composition of the phosphate-based glass 9 contains, in terms of % by weight,
  • the phosphate-based glass 10 is intended to absorb light beams in an ultraviolet wavelength region, and the transmittance in a wavelength range of 300 nm to 430 nm is 3% or less.
  • a composition of the phosphate-based glass 10 contains, in terms of % by weight,
  • the phosphate-based glass 9 and the phosphate-based glass 10 can have the above-described light-transmitting characteristics and high weather resistance.
  • FIG. 6 shows spectrums of spectral luminous efficacy properties which are obtained.
  • the vertical axis represents a transmittance
  • the horizontal axis represents a wavelength.
  • the phosphate-based glass 9 and the phosphate-based glass 10 , and the phosphate-based glass having the light-shielding properties are constituted by using phosphate-based glass through composition changing. Accordingly, physical properties including a difference in a coefficient of expansion become close to each other.
  • the lid member that is integrally formed as the laminated glass member cracking or peeling-off does not occur, and it is possible to provide weather resistance higher in comparison to phosphate-based glass in the related art.
  • the phosphate-based glass 9 that absorbs light beams in an infrared wavelength region in which the transmittance in a wavelength range of 700 nm to 1200 nm is 2% or less and the phosphate-based glass 10 that absorbs light beams in a ultraviolet wavelength region in which the transmittance in a wavelength range of 300 nm to 430 nm is 3% or less are superimposed on each other, glass wafers which are highly flattened through polishing are superimposed on which other, and then a load is applied thereto. Then, the superimposed wafers are put into a softening temperature atmosphere furnace set to a vacuum atmosphere or a nitrogen atmosphere so as to obtain laminated glass.
  • the laminated glass may be obtained as follows. Specifically, the glass wafers after being polished are subjected to a chemical treatment with an acid, and is subjected to drying and annealing so as to be an activation state. The glass wafers are superimposed on each other, and a load is applied thereto. Then, the glass wafers are put into a high-temperature furnace set to a vacuum or nitrogen atmosphere. According to this, the laminated glass is obtained.
  • the laminated glass in which the phosphate-based glass 9 and the phosphate-based glass 10 are superimposed on each other may be obtained as follows. Specifically, after being highly flattened through polishing, glass wafers are subjected to a chemical treatment with an acid, and drying and annealing. Then, the glass wafers are superimposed on each other by using an adhesive, and then the glass wafers are cured. According to this, the laminated glass is obtained.
  • the adhesive a diluted coupling agent may be used as the adhesive. In this case, it is possible to form a very thin adhesive layer, and it is possible to realize laminated glass with high adhesive strength.
  • the laminated glass in which the phosphate-based glass 9 and the phosphate-based glass 19 are superimposed on each other are divided into individual pieces having an embedding size through dicing or by using a wire saw, and the individual pieces are embedded in the opened site provided in the frame 1 constituted by the phosphate-based glass having the light-shielding properties and are melt-integrated to obtain the glass lid member.
  • FIG. 5 is a cross-sectional view of an optical sensor device 12 of this example.
  • the optical sensor device in FIG. 3 which includes the element-mounting portion 3 having the cavity, and the closely attach lid member, and has a structure in which individual pieces of the glass, in which the phosphate-based glass 9 that absorbs light beams in an infrared wavelength region in which the transmittance in a wavelength range of 700 nm to 1200 nm is 2% or less, and the phosphate-based glass 10 that absorbs light beams in a ultraviolet wavelength region in which the transmittance in a wavelength range of 300 nm to 430 nm is 3% or less are superimposed, are embedded in the opened site provided in the frame 1 constituted by the phosphate-based glass having the light-shielding properties, an element-mounting portion, to which the element 4 is stuck with an adhesive, is constituted by a mount portion 11 formed from a material having heat dissipation properties, and the mount portion 11 has a shape in which
  • the optical sensor device using the package in which the lid member and the element-mounting portion having the cavity are closely attached to each other, has the hollow structure in which the phosphate-based glass formed as laminated glass having spectral luminous efficacy properties and high weather resistance is used as the lid member. Accordingly, it is possible to provide spectral luminous efficacy properties less susceptible to an effect such as heat and moisture, and high reliability. In addition, spectral luminous efficacy properties of light beams, which are received by the light-receiving element, can be obtained in a wide angle range including not only a direction in an immediate upward direction of the element, and an oblique direction. As a result, it is possible to greatly improve angle dependence.
  • the phosphate-based glass has a composition having transmittance characteristics, in which a light beam of a wavelength in an ultraviolet region and a light beam of a wavelength in an infrared region is 3% to 2%, in spectral luminous efficacy properties, and high weather resistance.
  • a composition having transmittance characteristics in which a light beam of a wavelength in an ultraviolet region and a light beam of a wavelength in an infrared region is 3% to 2%, in spectral luminous efficacy properties, and high weather resistance.
  • the phosphate-based glass is less susceptible town ambient environment, and a variation with the passage of time is also small. According to this, it is possible to provide an optical sensor device in which deterioration in characteristics is small.
  • the phosphate-based glass can contribute to supply of the optical sensor device to a television, a household electric appliance, and a portable terminal, and further an optical sensor device mounted apparatus with concern of an in-vehicle use or an outdoor use in more severe environments.
  • Frame which is formed phosphate-based glass having light-shielding properties, of lid member

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Glass Compositions (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Optical Filters (AREA)
US15/117,077 2014-02-18 2015-01-27 Optical sensor device Active US9691914B2 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2014-028571 2014-02-18
JP2014028571 2014-02-18
JP2014262224A JP6415309B2 (ja) 2014-02-18 2014-12-25 光センサ装置
JP2014-262224 2014-12-25
PCT/JP2015/052101 WO2015125565A1 (ja) 2014-02-18 2015-01-27 光センサ装置

Publications (2)

Publication Number Publication Date
US20160351731A1 US20160351731A1 (en) 2016-12-01
US9691914B2 true US9691914B2 (en) 2017-06-27

Family

ID=53878079

Family Applications (1)

Application Number Title Priority Date Filing Date
US15/117,077 Active US9691914B2 (en) 2014-02-18 2015-01-27 Optical sensor device

Country Status (6)

Country Link
US (1) US9691914B2 (ko)
JP (1) JP6415309B2 (ko)
KR (1) KR102180504B1 (ko)
CN (1) CN106165108B (ko)
TW (1) TWI646693B (ko)
WO (1) WO2015125565A1 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI540479B (zh) * 2014-11-21 2016-07-01 群創光電股份有限公司 觸控顯示裝置及其製造方法
CN106380073B (zh) * 2016-08-27 2019-03-29 赵碧华 一种硬质抗冲击型玻璃幕墙材料及其制备方法
WO2018131471A1 (ja) * 2017-01-11 2018-07-19 日本電気硝子株式会社 気密パッケージ及びガラス蓋
CN109962041B (zh) * 2017-12-26 2023-10-24 意法半导体有限公司 具有光保护的环境光传感器
JP2020072100A (ja) * 2018-10-29 2020-05-07 新日本無線株式会社 紫外線センサの製造方法
JP2022048649A (ja) 2020-09-15 2022-03-28 株式会社デンソー 電子装置

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006001808A (ja) 2004-06-18 2006-01-05 Isuzu Seiko Glass Kk 近赤外線カットガラス
JP2006213546A (ja) 2005-02-02 2006-08-17 Hoya Corp ガラスの製造方法および赤外カットフィルター
JP2007036264A (ja) 2003-01-20 2007-02-08 Sharp Corp 光センサ用透光性樹脂組成物
US7498145B2 (en) * 2003-08-29 2009-03-03 Kabushiki Kaisha Toshiba Concentration measuring method, concentration measuring kit, and sensor chip for use in the method
JP2009267396A (ja) 2008-03-31 2009-11-12 Asahi Glass Co Ltd 固体撮像素子パッケージ用窓ガラス
CN101823341A (zh) 2009-03-06 2010-09-08 住友化学株式会社 用于将液晶聚合物的模制品和玻璃基体彼此熔融结合的方法和由该方法得到的复合制品
JP2012238812A (ja) 2011-05-13 2012-12-06 Seiko Instruments Inc 受光デバイス
CN102856396A (zh) 2011-06-30 2013-01-02 精工电子有限公司 光传感器装置
US20130000355A1 (en) 2011-06-30 2013-01-03 Sadao Oku Method of manufacturing an optical filter for an illuminance sensor
JP2013110307A (ja) 2011-11-22 2013-06-06 Seiko Instruments Inc 半導体素子搭載用パッケージ及びその製造方法
CN103258833A (zh) 2012-01-05 2013-08-21 苹果公司 具有光吸收层的图像传感器组件的盖
US20160194496A1 (en) * 2013-09-03 2016-07-07 Dow Corning Toray Co., Ltd. Curable Silicone Composition, Cured Product Thereof, And Optical Semiconductor Device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002334975A (ja) * 2001-05-08 2002-11-22 Nec Corp 半導体装置の支持構造、ｃｃｄ半導体装置、その製造方法、及び、ｃｃｄ半導体装置用パッケージ
JP5256388B2 (ja) * 2008-06-17 2013-08-07 株式会社藤商事 弾球遊技機
JP2010040672A (ja) * 2008-08-01 2010-02-18 Oki Semiconductor Co Ltd 半導体装置およびその製造方法
US9154869B2 (en) * 2012-01-04 2015-10-06 Apple Inc. Speaker with a large volume chamber and a smaller volume chamber
JP6429621B2 (ja) * 2014-02-18 2018-11-28 エイブリック株式会社 光センサ装置および光センサ装置の製造方法

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007036264A (ja) 2003-01-20 2007-02-08 Sharp Corp 光センサ用透光性樹脂組成物
US7498145B2 (en) * 2003-08-29 2009-03-03 Kabushiki Kaisha Toshiba Concentration measuring method, concentration measuring kit, and sensor chip for use in the method
JP2006001808A (ja) 2004-06-18 2006-01-05 Isuzu Seiko Glass Kk 近赤外線カットガラス
JP2006213546A (ja) 2005-02-02 2006-08-17 Hoya Corp ガラスの製造方法および赤外カットフィルター
JP2009267396A (ja) 2008-03-31 2009-11-12 Asahi Glass Co Ltd 固体撮像素子パッケージ用窓ガラス
CN101823341A (zh) 2009-03-06 2010-09-08 住友化学株式会社 用于将液晶聚合物的模制品和玻璃基体彼此熔融结合的方法和由该方法得到的复合制品
JP2012238812A (ja) 2011-05-13 2012-12-06 Seiko Instruments Inc 受光デバイス
CN102856396A (zh) 2011-06-30 2013-01-02 精工电子有限公司 光传感器装置
US20130000355A1 (en) 2011-06-30 2013-01-03 Sadao Oku Method of manufacturing an optical filter for an illuminance sensor
JP2013011818A (ja) 2011-06-30 2013-01-17 Seiko Instruments Inc 照度センサ用光学フィルターの製造方法
JP2013110307A (ja) 2011-11-22 2013-06-06 Seiko Instruments Inc 半導体素子搭載用パッケージ及びその製造方法
CN103258833A (zh) 2012-01-05 2013-08-21 苹果公司 具有光吸收层的图像传感器组件的盖
US20160194496A1 (en) * 2013-09-03 2016-07-07 Dow Corning Toray Co., Ltd. Curable Silicone Composition, Cured Product Thereof, And Optical Semiconductor Device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
First Office Action together with English language translation thereof, issued on Apr. 5, 2017 by the Chinese Patent Office Chinese in Application No. 201580008833.5.
International Search Report mailed Apr. 7, 2015 in International Application No. PCT/JP2015/052101 together with English-language translation thereof.

Also Published As

Publication number Publication date
US20160351731A1 (en) 2016-12-01
TWI646693B (zh) 2019-01-01
CN106165108B (zh) 2017-11-24
WO2015125565A1 (ja) 2015-08-27
KR102180504B1 (ko) 2020-11-18
TW201543696A (zh) 2015-11-16
JP6415309B2 (ja) 2018-10-31
KR20160122720A (ko) 2016-10-24
JP2015172567A (ja) 2015-10-01
CN106165108A (zh) 2016-11-23

Similar Documents

Publication Publication Date Title
US9691914B2 (en) Optical sensor device
US6603183B1 (en) Quick sealing glass-lidded package
US6503780B1 (en) Wafer scale image sensor package fabrication method
US6407381B1 (en) Wafer scale image sensor package
JP5043297B2 (ja) デバイスの溶融密封方法及びシステム
JP4855869B2 (ja) 発光装置の製造方法
US8946664B2 (en) Optical sensor device having wiring pattern within cavity housing optical sensor element
US20110057553A1 (en) Light emitting device
US7064424B2 (en) Optical surface mount technology package
CN101128750A (zh) 制造光学部件和发射辐射的部件的方法，以及光学部件和发射辐射的部件
TWI619208B (zh) 具聚光結構之光學模組的封裝方法
CN102549785A (zh) 发光装置
US9716190B2 (en) Optical sensor device and method of manufacturing optical sensor device
JP2010268013A (ja) 発光装置
US20070120041A1 (en) Sealed Package With Glass Window for Optoelectronic Components, and Assemblies Incorporating the Same
US9773926B2 (en) Optical sensor device
JP2022543633A (ja) 気密封止ガラスパッケージ
KR20040033193A (ko) 이미지 센서용 반도체 칩 패키지 및 제조 방법
TW201828506A (zh) 具有斜面晶片反射結構之晶片級封裝發光裝置及其製造方法
JP4730135B2 (ja) 画像センサパッケージ
US9343639B2 (en) Light emitting diode (LED) device having lens protective structure and method of fabrication
JP2001102470A (ja) 半導体装置
US20160365493A1 (en) Light-emitting diode device
JP6166617B2 (ja) 光半導体装置の製造方法
KR20170067071A (ko) Led 칩 봉지부재 및 이를 포함하는 led 패키지

Legal Events

Date Code Title Description
AS Assignment

Owner name: SII SEMICONDUCTOR CORPORATION, JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:TSUKAGOSHI, KOJI;REEL/FRAME:039356/0578

Effective date: 20160628

Owner name: SII SEMICONDUCTOR CORPORATION, JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:HIGASHI, NORIYOSHI;REEL/FRAME:039356/0670

Effective date: 20160630

STCF Information on status: patent grant

Free format text: PATENTED CASE

AS Assignment

Owner name: ABLIC INC., JAPAN

Free format text: CHANGE OF NAME;ASSIGNOR:SII SEMICONDUCTOR CORPORATION;REEL/FRAME:045567/0927

Effective date: 20180105

CC Certificate of correction
MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1551); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Year of fee payment: 4

AS Assignment

Owner name: ABLIC INC., JAPAN

Free format text: CHANGE OF ADDRESS;ASSIGNOR:ABLIC INC.;REEL/FRAME:064021/0575

Effective date: 20230424