US9553280B2 - Organic light-emitting diode (OLED) display comprising flexible substrate, electronic device including the same, and method of manufacturing the OLED display - Google Patents

Organic light-emitting diode (OLED) display comprising flexible substrate, electronic device including the same, and method of manufacturing the OLED display Download PDF

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US9553280B2
US9553280B2 US14/789,212 US201514789212A US9553280B2 US 9553280 B2 US9553280 B2 US 9553280B2 US 201514789212 A US201514789212 A US 201514789212A US 9553280 B2 US9553280 B2 US 9553280B2
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oled
plastic
barrier layer
silicon nitride
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US20160141551A1 (en
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Jungjoon SEO
Hyunbeen Hwang
In HUH
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Samsung Display Co Ltd
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    • H01L51/5253—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H01L51/0097—
    • H01L51/5256—
    • H01L51/56—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H01L2251/301—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the described technology generally relates to an organic light-emitting diode (OLED) display, an electronic device including the same, and a method of manufacturing the OLED display.
  • OLED organic light-emitting diode
  • OLED displays are self-emissive and include a number of OLEDs each having a hole injection electrode, an electron injection electrode, and an organic emission layer that is interposed between the hole and electron injection electrodes. Light is emitted from the OLEDs when holes injected from the hole injection electrode and electrons injected from the electron injection electrode recombine with and annihilate each other in the organic emission layer. OLED displays have garnered attention as next-generation displays due to their superior characteristics such as low power consumption, high luminance, and high response speeds.
  • One inventive aspect is an OLED display including a flexible substrate having a low water vapor transmission rate (WVTR) and a high adhesive force, an electronic device including the OLED display, and a method of manufacturing the OLED display.
  • WVTR water vapor transmission rate
  • an OLED display including a first plastic layer; a first barrier layer formed on the first plastic layer; a first intermediate layer formed on the first barrier layer; a second plastic layer formed on the first intermediate layer; a second intermediate layer formed on the second plastic layer; a second barrier layer formed on the second intermediate layer; an OLED layer formed on the second barrier layer; and a thin-film encapsulation layer that encapsulates the OLED layer.
  • the first intermediate layer can include amorphous silicon (a-silicon).
  • the second intermediate layer can include a-silicon.
  • the first intermediate layer can include a metal thin film.
  • the second intermediate layer can include a metal thin film.
  • the ultraviolet (UV) transmittance of the first intermediate layer can be equal to or greater than 10%.
  • Each of the first plastic layer and the second plastic layer can include at least one of the following materials: polyimide, polyethylene naphthalate, polyethylene terephthalate (PET), polyarylate, polycarbonate, polyethersulfone, and polyetherimide (PEI).
  • PET polyethylene terephthalate
  • PEI polyetherimide
  • the thickness of the second plastic layer can be greater than a thickness of the first plastic layer.
  • the viscosity of the second plastic layer can be less than a viscosity of the first plastic layer.
  • the first barrier layer can include a first silicon nitride layer
  • the second barrier layer can include a second silicon nitride layer
  • the density of the second barrier layer can be greater than a density of the first silicon nitride layer
  • the first barrier layer can further include a metal oxide film or a silicon oxide film.
  • the second barrier layer can further include a metal oxide film or a silicon oxide film.
  • the density of the first silicon nitride layer can be equal to or greater than about 2.2 g/cm3 and is equal to or less than about 2.4 g/cm3.
  • the thin-film encapsulation layer can include at least one of the following materials: an inorganic layer and an organic layer.
  • Another aspect is an electronic device including the OLED display.
  • Another aspect is a method of manufacturing an OLED display including preparing a carrier substrate; forming on the carrier substrate a mother flexible substrate including a first plastic layer, a first barrier layer, a first intermediate layer, a second plastic layer, a second intermediate layer, and a second barrier layer that are sequentially stacked; forming a plurality of OLED layers on the mother flexible substrate; forming a thin-film encapsulation layer that encapsulates the plurality of OLED layers; separating the mother flexible substrate from the carrier substrate; and dividing the plurality of OLED layers formed on the mother flexible substrate into a plurality of display units.
  • the separating of the mother flexible substrate from the carrier substrate can include separating the mother flexible substrate from the carrier substrate by emitting a laser beam toward a surface of the carrier substrate that is opposite to a surface of the carrier substrate on which the mother flexible substrate is formed.
  • the emitting of the laser beam can include emitting ultraviolet (UV) light.
  • UV ultraviolet
  • the carrier substrate can be a glass substrate.
  • the first barrier layer can include at least a first silicon nitride layer
  • the second barrier layer can include a second silicon nitride layer
  • a density of the second silicon nitride layer can be greater than a density of the first silicon nitride layer
  • an OLED display comprising a first plastic layer; a first barrier layer formed over the first plastic layer; a first intermediate layer formed over the first barrier layer; a second plastic layer formed over the first intermediate layer; a second intermediate layer formed over the second plastic layer; a second barrier layer formed over the second intermediate layer; an OLED layer formed over the second barrier layer; and a thin-film encapsulation layer encapsulating the OLED layer.
  • the first intermediate layer comprises amorphous silicon.
  • the second intermediate layer can comprise amorphous silicon.
  • the first intermediate layer can comprise a metal thin film.
  • the second intermediate layer can comprise a metal thin film.
  • the ultraviolet (UV) transmittance of the first intermediate layer can be greater than or equal to about 10%.
  • Each of the first plastic layer and the second plastic layer can comprise at least one of the following materials: polyimide, polyethylene naphthalate, polyethylene terephthalate (PET), polyarylate, polycarbonate, polyethersulfone, and polyetherimide (PEI).
  • the second plastic layer has a thickness that is greater than that of the first plastic layer.
  • the second plastic layer can have a viscosity that is less than that of the first plastic layer.
  • the first barrier layer can comprise a first silicon nitride layer, the second barrier layer can comprise a second silicon nitride layer, and the silicon nitride density of the second barrier layer can be greater than that of the first silicon nitride layer.
  • the first barrier layer can further comprise a metal oxide film or a silicon oxide film.
  • the second barrier layer further comprises a metal oxide film or a silicon oxide film.
  • the silicon nitride density of the first silicon nitride layer can be greater than or equal to about 2.2 g/cm 3 and can be less than or equal to about 2.4 g/cm 3 .
  • the thin-film encapsulation layer can comprise at least one of an inorganic layer and an organic layer.
  • an electronic device comprising an organic light-emitting diode (OLED) display, comprising: a first plastic layer; a first barrier layer formed over the first plastic layer; a first intermediate layer formed over the first barrier layer; a second plastic layer formed over the first intermediate layer; a second intermediate layer formed over the second plastic layer; a second barrier layer formed over the second intermediate layer; an OLED layer formed over the second barrier layer; and a thin-film encapsulation layer encapsulating the OLED layer.
  • OLED organic light-emitting diode
  • Another aspect is a method of manufacturing an OLED display comprising preparing a carrier substrate; forming a mother flexible substrate on the carrier substrate, wherein the mother substrate comprises a first plastic layer, a first barrier layer, a first intermediate layer, a second plastic layer, a second intermediate layer, and a second barrier layer that are sequentially stacked; forming a plurality of OLED layers on the mother flexible substrate; forming a thin-film encapsulation layer so as to encapsulate the OLED layers; separating the mother flexible substrate from the carrier substrate; and dividing the OLED layers formed on the mother flexible substrate into a plurality of display units.
  • the separating of the mother flexible substrate from the carrier substrate comprises emitting laser light toward a surface of the carrier substrate that is opposite to a surface of the carrier substrate on which the mother flexible substrate is formed.
  • the laser light can be ultraviolet (UV) light.
  • the carrier substrate can be a glass substrate.
  • the first barrier layer can comprise at least a first silicon nitride layer
  • the second barrier layer can comprise a second silicon nitride layer
  • the silicon nitride density of the second silicon nitride layer can be greater than that of the first silicon nitride layer.
  • FIG. 1 is a cross-sectional view illustrating an OLED display according to an exemplary embodiment.
  • FIG. 2 is an enlarged view of portion II of FIG. 1 , illustrating a thin-film transistor (TFT) layer and an OLED layer of the OLED display.
  • TFT thin-film transistor
  • FIG. 3 is a cross-sectional view illustrating an OLED display according to a first comparative example.
  • FIG. 4 is a cross-sectional view illustrating an OLED display according to a second comparative example.
  • FIG. 5A is a plan view for explaining an operation of forming a mother flexible substrate on a glass substrate.
  • FIG. 5B is a cross-sectional view taken along line VB-VB of FIG. 5A .
  • FIG. 6A is a plan view for explaining a process of forming a plurality of OLED displays on the mother flexible substrate.
  • FIG. 6B is a cross-sectional view taken along line VIB-VIB of FIG. 6A .
  • FIG. 7 is a cross-sectional view for explaining a process of forming a thin-film encapsulation layer that encapsulates a plurality of the OLED layers on the mother flexible substrate.
  • FIGS. 8 and 9 are cross-sectional views for explaining a process of separating the mother flexible substrate from the glass substrate.
  • FIG. 10 is a cross-sectional view for explaining a process of dividing the OLED layer that is formed on the mother flexible substrate into the plurality of OLED displays.
  • FIG. 11 is a view illustrating a flexible substrate of the OLED display of FIG. 1 according to another exemplary embodiment.
  • FIG. 12 is a graph illustrating a relationship between a gate voltage and a drain current of an OLED.
  • FIG. 13 is a graph illustrating a relationship between an initial silicon nitride density and hydrogen (H) content.
  • the term “and/or” includes any and all combinations of one or more of the associated listed items. Expressions such as “at least one of,” when preceding a list of elements, modify the entire list of elements and do not modify the individual elements of the list.
  • FIG. 1 is a cross-sectional view illustrating an OLED display 100 according to an exemplary embodiment.
  • the OLED display 100 includes a flexible substrate FS, a TFT layer 110 , an OLED layer 120 , and a thin-film encapsulation layer 130 .
  • the flexible substrate FS includes a first plastic layer 1 PL, a first barrier layer 1 BL, a first intermediate layer 1 IL, a second plastic layer 2 PL, a second intermediate layer 2 IL, and a second barrier layer 2 BL.
  • Each of the first plastic layer 1 PL and the second plastic layer 2 PL can be formed of a plastic material having high heat resistance and high durability such as polyimide, polyethylene naphthalate, polyethylene terephthalate (PET), polyarylate, polycarbonate, polyetherimide (PEI), or polyethersulfone.
  • a plastic material having high heat resistance and high durability such as polyimide, polyethylene naphthalate, polyethylene terephthalate (PET), polyarylate, polycarbonate, polyetherimide (PEI), or polyethersulfone.
  • Moisture or oxygen may more easily penetrate through the first plastic layer 1 PL and the second plastic layer 2 PL each formed of the plastic material than a glass substrate.
  • an organic emission layer that is vulnerable to moisture or oxygen may be degraded when moisture or oxygen permeates through the first or second plastic layers 1 PL or 2 PL, thereby reducing the lifespan of an OLED.
  • the first barrier layer 1 BL is formed on the first plastic layer 1 PL and the second barrier layer 2 BL is formed on the second plastic layer 2 PL.
  • Each of the first barrier layer 1 BL and the second barrier layer 2 BL may be formed of an inorganic material such as metal oxide, silicon nitride, or silicon oxide.
  • each of the first barrier layer 1 BL and the second barrier layer 2 BL may have a single-layer structure or a multi-layer structure formed of an inorganic material such as AlO3, SiO2, or SiNx.
  • a water vapor transmission rate (WVTRs) of each of the first barrier layer 1 BL and the second barrier layer 2 BL that is formed to have a single-layer structure or a multi-layer structure can be less than or equal to about 10 ⁇ 5 g/m 2 day.
  • the first intermediate layer 1 IL is formed between the first barrier layer 1 BL and the second plastic layer 2 PL in order to increase an adhesive force between the first barrier layer 1 BL and the second plastic layer 2 PL.
  • the second intermediate layer 2 IL is formed between the second plastic layer 2 PL and the second barrier layer 2 BL in order to increase an adhesive force between the second plastic layer 2 PL and the second barrier layer 2 BL.
  • the TFT layer 110 and the OLED layer 120 are formed on the flexible substrate FS.
  • FIG. 2 is an enlarged view of portion II of FIG. 1 , illustrating the TFT layer 110 and the OLED layer 120 of the OLED display 100 .
  • a TFT is formed on the second barrier layer 2 BL and includes a semiconductor layer 111 , a gate electrode 113 , a source electrode 115 , and a drain electrode 116 .
  • a gate insulation film 112 is formed between the semiconductor layer 111 and the gate electrode 113 and an interlayer insulation film 114 is formed between the gate electrode 113 and the source and drain electrodes 115 and 116 .
  • the semiconductor layer 111 can be formed of polycrystalline silicon (poly-silicon), amorphous silicon (a-silicon), an organic TFT, or a conductive oxide TFT.
  • the TFT is a top gate type TFT in the FIG. 2 embodiment, the described technology is not limited thereto. That is, any suitable TFT variant including a bottom gate type TFT can be used.
  • the TFT is directly formed on the second barrier layer 2 BL in the FIG. 2 embodiment, the described technology is not limited thereto.
  • a buffer layer (not shown) can be further interposed between the second barrier layer 2 BL and the TFT.
  • the buffer layer planarizes the flexible substrate FS and prevents impurity elements from penetrating from the flexible substrate FS into the semiconductor layer 111 .
  • the buffer layer can have a single- or multi-layer structure formed of silicon nitride and/or silicon oxide. Also, although not shown in FIG. 2 , at least one capacitor can be connected to the TFT.
  • a passivation layer 117 is formed on the TFT and a pixel-defining layer 122 is formed on the passivation layer 117 .
  • the passivation layer 117 can protect the TFT and planarize a top surface of the TFT.
  • the OLED is connected to one of the source and drain electrodes 115 and 116 of the TFT.
  • the OLED includes a pixel electrode 121 , a counter electrode or common electrode 124 , and a layer 123 including at least an organic emission layer that is interposed between the pixel electrode 121 and the counter electrode 124 .
  • the layer 123 including the organic emission layer can be formed of a low molecular or high molecular weight organic material.
  • the layer 123 can be formed to have a single or complex structure in which a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML), an electron transport layer (ETL), and an electron injection layer (EIL) are stacked.
  • HIL hole injection layer
  • HTL hole transport layer
  • EML emission layer
  • ETL electron transport layer
  • EIL electron injection layer
  • the layer 123 can have a structure including an HTL and an EML.
  • the layer 123 including the organic emission layer can form one unit pixel including sub-pixels that emit red, green, and blue light.
  • the layer 123 including the organic emission layer can be formed by vertically stacking or combining layers including light-emitting materials that emit red, green, and blue light. As long as white light is emitted, any other combination of colors can be used.
  • the OLED display 100 can further include a color filter or a color changing layer that changes the white light to light of a predetermined color.
  • the counter electrode 124 can be formed in various ways and for example, can be commonly formed across a plurality of pixels.
  • the pixel electrode 121 can function as an anode and the counter electrode 124 can function as a cathode, or vice versa. Also, at least one of the pixel electrode 121 and the counter electrode 124 can be a transparent electrode through which light emitted from the EML is transmitted.
  • the OLED layer 120 is formed on the TFT layer 110 in FIGS. 1 and 2 for convenience of explanation. Accordingly, for example, parts of the TFT layer 110 and the OLED layer 120 can be formed on the same layer. For example, the gate electrode 113 of the TFT and the pixel electrode 121 of the OLED can be formed on the same layer.
  • the thin-film encapsulation layer 130 that encapsulates the OLED is formed on the flexible substrate FS.
  • the thin-film encapsulation layer 130 can be formed of a plurality of inorganic layers or a combination of an inorganic layer and an organic layer.
  • the organic layer is formed of a polymer and can have a single- or multi-layer structure formed of any one of the following materials: polyethylene terephthalate, polyimide, polycarbonate, epoxy, polyethylene, and polyacrylate.
  • the organic layer can be formed of polyacrylate, and specifically, can include a polymerized monomer composite including a diacrylate-based monomer and a triacrylate-based monomer. A monoacrylate-based monomer may be further included in the polymerized monomer composite.
  • the polymerized monomer composite may include, but is not limited to, a photoinitiator such as TPO.
  • the inorganic layer can have a single- or multi-layer structure including metal oxide or metal nitride.
  • the inorganic layer can include any of the following materials: SiNx, Al2O3, SiO2, and TiO2.
  • the uppermost layer of the thin-film encapsulation layer 130 that is exposed to the environment can be an inorganic layer in order to prevent water vapor transmission into the OLED.
  • the thin-film encapsulation layer 130 can include at least one sandwich structure in which at least one organic layer is inserted between at least two inorganic layers.
  • the thin-film encapsulation layer 130 can include at least one sandwich structure in which at least one inorganic layer is inserted between at least two organic layers.
  • the thin-film encapsulation layer 130 can include a first inorganic layer, a first organic layer, and a second inorganic layer that are sequentially stacked on the top of the OLED.
  • the thin-film encapsulation layer 130 can include a first inorganic layer, a first organic layer, a second inorganic layer, a second organic layer and a third inorganic layer that are sequentially stacked on the top of the OLED.
  • the thin-film encapsulation layer 130 can include a first inorganic layer, a first organic layer, a second inorganic layer, a second organic layer, a third inorganic layer, a third organic layer, and a fourth inorganic layer that are sequentially stacked on the top of the OLED.
  • a halogenated metal layer including Lithium Fluoride (LiF) can be further interposed between the OLED and the first inorganic layer.
  • the halogenated metal layer can prevent the OLED from being damaged when the first inorganic layer is formed by using sputtering or plasma deposition.
  • the area of the first organic layer may be less than the area of the second inorganic layer and the area of the second organic layer may be less than the area of the third inorganic layer. Also, the first organic layer may be completely covered by the second inorganic layer and the second organic layer may also be completely covered by the third inorganic layer.
  • the thin-film encapsulation layer 130 is directly formed on the counter electrode 124 in the embodiment of FIGS. 1 and 2 , this is exemplary and another element such as a filter or an adhesive material can be further interposed between the counter electrode 124 and the thin-film encapsulation layer 130 .
  • FIG. 3 is a cross-sectional view illustrating an OLED display 101 according to a first comparative example.
  • the OLED display 101 includes a flexible substrate FS- 1 , the TFT layer 110 , the OLED layer 120 , and the thin-film encapsulation layer 130 .
  • the flexible substrate FS- 1 includes the first plastic layer 1 PL and the first barrier layer 1 BL. That is, the flexible substrate FS- 1 includes one plastic layer and one barrier layer.
  • the surface of the first barrier layer 1 BL can be damaged, for example, cracked, due to impurities or retraction defects formed on the first plastic layer 1 PL and/or the first barrier layer 1 BL. Moisture or oxygen may penetrate through the damaged surface, thereby damaging the OLED.
  • FIG. 4 is a cross-sectional view illustrating an OLED display 102 according to a second comparative example.
  • the OLED display 102 includes a flexible substrate FS- 2 , the TFT layer 110 , the OLED layer 120 , and the thin-film encapsulation layer 130 .
  • the flexible substrate FS- 2 includes the first plastic layer 1 PL, the first barrier layer 1 BL, the second plastic layer 2 PL, and the second barrier layer 2 BL. That is, the flexible substrate FS- 2 is formed by repeatedly forming a structure including a plastic layer and a barrier layer formed on the plastic layer.
  • Impurities or retraction defects may be randomly formed on the second plastic layer 2 PL and the second barrier layer 2 BL as well as on the first plastic layer 1 PL and the first barrier layer 1 BL.
  • the OLED can be prevented from being damaged.
  • the adhesive force between the first barrier layer 1 BL that is an inorganic film and the second plastic layer 2 PL that is an organic film is relatively weak and the adhesive force between the second plastic layer 2 PL that is an organic film and the second barrier layer 2 BL is relatively weak, the first barrier layer 1 BL and the second plastic layer 2 PL may be detached from each other and the second plastic layer 2 PL and the second barrier layer 2 BL may be detached from each other during a manufacturing process.
  • the first intermediate layer 1 IL is formed between the first barrier layer 1 BL and the second plastic layer 2 PL in order to increase the adhesive force between the first barrier layer 1 BL and the second plastic layer 2 PL, the first barrier layer 1 BL and the second plastic layer 2 PL can be prevented from being detached from each other.
  • the second intermediate layer 2 IL is formed between the second plastic layer 2 PL and the second barrier layer 2 BL in order to increase the adhesive force between the second plastic layer 2 PL and the second barrier layer 2 BL, the second plastic layer 2 PL and the second barrier layer 2 BL can be prevented from being detached from each other.
  • the first intermediate layer 1 IL of the present exemplary embodiment can include an amorphous material.
  • the first intermediate layer 1 IL can include, for example, a-silicon as the amorphous material.
  • the first intermediate layer 1 IL of the present exemplary embodiment can include a metal thin film.
  • the metal thin film may include at least one of the following materials: indium tin oxide (ITO), aluminum (Al), titanium (Ti), and molybdenum (Mo).
  • ITO indium tin oxide
  • Al aluminum
  • Ti titanium
  • Mo molybdenum
  • the material of the first intermediate layer 1 IL is not limited to any of these materials and any material for increasing the adhesive force between the first barrier layer 1 BL and the second plastic layer 2 PL can be used.
  • the first intermediate layer 1 IL can be formed to have a ultraviolet (UV) light transmittance that is equal to or greater than about 10% so that the second plastic layer 2 PL can be smoothly separated from the glass substrate GS during a process of separating a mother flexible substrate MFS from the glass substrate GS as will be described below with reference to FIGS. 11A and 11B .
  • the first intermediate layer 1 IL can be formed to have a thickness that is equal to or less than about 100 ⁇ .
  • the second intermediate layer 2 IL of the present exemplary embodiment can include an amorphous material.
  • the second intermediate layer 2 IL can include, for example, a-silicon as the amorphous material.
  • the second intermediate layer 2 IL of the present exemplary embodiment can include a metal thin film.
  • the metal thin film may include at least one of the following materials: ITO, Al, Ti, and Mo.
  • the material of the second intermediate layer 2 IL of the present exemplary embodiment is not limited to any of these materials, and any material for increasing the adhesive force between the second plastic layer 2 PL and the second barrier layer 2 BL can be used.
  • Table 1 shows the result obtained after performing detachment evaluation between the first barrier layer 1 BL and the second plastic layer 2 PL in which the first intermediate layer 1 IL is not formed in the flexible substrate FS- 2 before the flexible substrate FS- 2 is divided into display units.
  • Sample 1 uses a SiO2 single layer
  • Sample 2 uses a SiNx single layer
  • Sample 3 uses a SiO2/SiNx/SiO2 complex layer
  • Sample 4 uses a SiNx/SiO2/SiNx that complex layer, as each of the first barrier layer 1 BL and the second barrier layer 2 BL.
  • Table 2 shows the result obtained after performing detachment evaluation between the first barrier layer 1 BL and the second plastic layer 2 PL in a display unit in which the first intermediate layer 1 IL is not formed in the flexible substrate FS- 2 after the flexible substrate FS- 2 is divided into display units.
  • Sample 5 uses a SiNx/SiO2 complex layer and Sample 6 uses a SiNx/SiO2/SiNx complex layer, as each of the first barrier layer 1 BL and the second barrier layer 2 BL.
  • Table 3 shows the result obtained after performing detachment evaluation between the first barrier layer 1 BL and the second plastic layer 2 PL in which the first intermediate layer 1 IL is formed in the flexible substrate FS before the flexible substrate FS is divided into display units.
  • Sample 7 uses ITO, Sample 8 uses Ti, and Sample 9 uses Al, as the first intermediate layer 1 IL.
  • Sample 10 includes forming the first intermediate layer 1 IL for 5 seconds by using a-Si and Sample 11 includes forming the first intermediate layer 1 IL for 10 seconds by using a-Si.
  • the first and second barrier layers 1 BL and 2 BL are formed by using a SiNx/SiO2 complex layer respectively to thickness of 600 ⁇ and 1500 ⁇ .
  • Table 4 shows a result obtained after performing detachment evaluation between the first barrier layer 1 BL and the second plastic layer 2 PL in a display unit in which the first intermediate layer 1 IL is formed in the flexible substrate FS after the flexible substrate FS is divided into display units.
  • Samples 7 through 11 are the same as those in Table 3.
  • the average adhesive force between the first barrier layer 1 BL and the second plastic layer 2 PL ranges from about 60 gf/inch to about 200 gf/inch.
  • the average adhesive force between the first barrier layer 1 BL and the second plastic layer 2 PL in the display units ranges from about 35 gf/inch to about 40 gf/inch which is low.
  • the average adhesive force between the first barrier layer 1 BL and the second plastic layer 2 PL ranges from about 100 gf/inch to about 300 gf/inch in the a-silicon and ii) the first barrier layer 1 BL and the second plastic layer 2 PL are undetachable in the metal thin film.
  • the first barrier layer 1 BL and the second plastic layer 2 PL are undetachable in a display unit, and the average adhesive force is not measurable. That is, when the first intermediate layer 1 IL is interposed between the first barrier layer 1 BL and the second plastic layer 2 PL, the adhesive force between the first barrier layer 1 BL and the second plastic layer 2 PL is greatly increased.
  • the OLED display 100 that is divided as a display unit is subjected to a process of adhering a chip-on-film (COF, not shown) on the display unit and a module assembly process of adhering a polarization film (not shown). While the COF is adhered, stress due to bending may be applied to the flexible substrate FS, the polarization film may be contracted and the second plastic layer 2 PL and the second barrier layer 2 BL may be detached from each other.
  • COF chip-on-film
  • the second intermediate layer 2 IL is formed between the second plastic layer 2 PL and the second barrier layer 2 BL in order to increase the adhesive force between the second plastic layer 2 PL and the second barrier layer 2 BL, the second plastic layer 2 PL and the second barrier layer 2 BL can be prevented from being detached from each other.
  • the flexible substrate FS is formed by alternately stacking two plastic layers and two barrier layers and interposed an intermediate layer between adjacent plastic and barrier layers, the average water vapor transmission path can be increased and the adhesive force between a lower barrier layer and an upper plastic layer that is adjacent to the lower barrier layer can be increased, thereby preventing the OLED display 100 from undergoing detachment defects.
  • FIG. 11 is a view illustrating the flexible substrate FS of the OLED display 100 of FIG. 1 according to another exemplary embodiment.
  • the flexible substrate FS includes the first plastic layer 1 PL, the first barrier layer 1 BL, the first intermediate layer 1 IL, the second plastic layer 2 PL, the second intermediate layer 2 IL, and the second barrier layer 2 BL.
  • the first barrier layer 1 BL and the second barrier layer 2 BL respectively include at least one silicon nitride layer 1 SN and at least one silicon nitride layer 2 SN.
  • the silicon nitride density of the silicon nitride layer 1 SN of the first barrier layer 1 BL is less than the silicon nitride density of the silicon nitride layer 2 SN of the second barrier layer 2 BL.
  • the silicon nitride density of the silicon nitride layer 1 SN of the first barrier layer 1 BL can be equal to or greater than about 2.2 g/cm 3 and can be equal to or less than about 2.4 g/cm 3 .
  • At least one layer of the first barrier layer 1 BL and the second barrier layer 2 BL is formed of silicon nitride in order to prevent water vapor transmission through a plastic substrate, the hydrogen content included in the silicon nitride may affect device characteristics of the TFT.
  • FIG. 12 is a graph illustrating the relationship between a gate voltage and a drain current of the OLED when a flexible structure has a structure A in which a silicon nitride layer is formed in the first barrier layer 1 BL and a silicon nitride layer is not formed in the second barrier layer 2 BL is used and when a flexible substrate having a structure B in which silicon nitride layers having the same density are formed in both the first barrier layer 1 BL and the second barrier layer 2 BL is used.
  • the slope of the curve for the structure B is greater than that of the curve for the structure A.
  • the change in the slope of the curve that is formed when the structure B is used occurs only in some OLEDs and does not occur in all OLEDs. Accordingly, in the structure B, a current compensation design is necessary in order to achieve uniform device characteristics.
  • a driving voltage is reduced according to the current compensation design, a low grayscale off defect wherein there is insufficient brightness for low grayscales may occur.
  • Table 5 shows a low grayscale off defect that occurs on 20 candelas (cd) when the flexible substrates having the structure A and the structure B are used.
  • the number of low grayscale off defects is greatly increased in the structure B. This is because device characteristics of the devices are non-uniform due to hydrogen that is randomly generated in the silicon nitride layer of the second barrier layer 2 BL.
  • the WVTR rate that is an important characteristic of a barrier is increased.
  • the silicon nitride density of the silicon nitride layer 1 SN of the first barrier layer 1 BL is less than the silicon nitride density of the silicon nitride layer 2 SN of the second barrier layer 2 BL as in the flexible substrate FS of the present exemplary embodiment, deviation of the WVTR of an OLED display can be reduced and characteristics of the TFTs can be improved.
  • FIG. 13 is a graph illustrating the relationship between initial silicon nitride density and hydrogen content.
  • the silicon nitride density of the silicon nitride layer 1 SN of the first barrier layer 1 BL can be equal to or less than about 2.4 g/cm 3 so that the silicon nitride layer 1 SN can be formed to be porous.
  • the hydrogen content is increased to be equal to or greater than about 1 ⁇ 10 17 at/cm 2 , thereby increasing the amount of hydrogen that is generated during thermal treatment performed on the silicon nitride layer 1 SN.
  • the increased hydrogen may cure a defective site of the TFT, thereby improving device characteristics of the TFT.
  • the silicon nitride layer 1 SN is formed in the first barrier layer 1 BL, the WVTR can be reduced.
  • the refractive index of the silicon nitride layer 1 SN of the first barrier layer 1 BL can be less than a refractive index of the silicon nitride layer 2 SN of the second barrier layer 2 BL.
  • one silicon nitride layer 1 SN of the first barrier layer 1 BL is formed on a silicon oxide layer in FIG. 13
  • the described technology is not limited thereto.
  • only one silicon nitride layer can be formed in the first barrier layer 1 BL.
  • a plurality of silicon nitride layers can be formed in the first barrier layer 1 BL.
  • a plurality of silicon oxide layers and a plurality of silicon nitride layers can be formed in the first barrier layer 1 BL.
  • FIGS. 5A through 10 are views for explaining a method of manufacturing the OLED display 100 , according to an exemplary embodiment.
  • FIG. 5A is a plan view for explaining an operation of forming the mother flexible substrate MFS on the glass substrate GS.
  • FIG. 5B is a cross-sectional view taken along line VB-VB of FIG. 5A .
  • the mother flexible substrate MFS is formed on the glass substrate GS.
  • the mother flexible substrate MFS formed of a plastic material is bendable or stretchable when heat is applied thereto, it is difficult to precisely form thin film patterns such as various electrodes or conductive wirings on the mother flexible substrate MFS. Accordingly, various thin film patterns are formed on the mother flexible substrate MFS which is adhered to the glass substrate GS that is a carrier substrate.
  • the first plastic layer 1 PS is formed on the glass substrate GS.
  • the first plastic layer 1 PS can be formed by coating and curing a plastic polymer solution including at least one of the following materials: polyimide, polyethylene naphthalate, PET, polyarylate, polycarbonate, PEI, and polyethersulfone on the glass substrate GS, or by laminating a polymer film on the glass substrate GS.
  • the curing can be performed by using any of various methods such as thermal curing, UV curing, or electron-beam curing.
  • the first barrier layer 1 BL is formed on the first plastic layer 1 PS.
  • the first barrier layer 1 BL can be formed to have a single- or multi-layer structure by using an inorganic material such as AlO3, SiO2, or SiNx by using chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), or atomic layer deposition (ALD).
  • CVD chemical vapor deposition
  • PECVD plasma enhanced chemical vapor deposition
  • ALD atomic layer deposition
  • the first intermediate layer 1 IL is formed on the first barrier layer 1 BL.
  • the first intermediate layer 1 IL can be formed to have a single- or multi-layer structure by using an amorphous material such as a-silicon or a metal thin film such as ITO, Al, Ti, or Mo by using CVD, PECVD, or ALD.
  • the second plastic layer 2 PL is formed on the first intermediate layer 1 IL.
  • the second plastic layer 2 PL can be formed of the same material by using the same method as those of the first plastic layer 1 PL.
  • the second plastic layer 2 PL can be formed to have a lower viscosity than the first plastic layer 1 PL.
  • the first and second plastic layers 1 PL and 2 PL are formed by using coating, many impurities are contained in a coating solution having a high viscosity, and thus the impurities may also be coated.
  • the second plastic layer 2 PL may have a lower viscosity than the first plastic layer 1 PL so that filtering is performed while the second plastic layer 2 PL is coated.
  • the impurities can be reduced by forming the second plastic layer 2 PL by using a filtered material. Since a coating solution that is used to form the second plastic layer 2 PL has a low viscosity, the impurities that are generated between the first plastic layer 1 PL and the first barrier layer 1 BL can be covered.
  • the described technology is not limited thereto.
  • the penetration time during which oxygen and moisture penetrate from the outside of the flexible substrate FS is affected more by the thickness of the second plastic layer 2 PS that is closer to the OLED layer 120 than that of the first plastic layer 1 PS. Accordingly, the OLED can be prevented from being degraded by delaying the penetration time by increasing the thickness of the second plastic layer 2 PS that is closer to the OLED layer 120 to be greater than that of the first plastic layer 1 PS.
  • the second intermediate layer 2 IL is formed on the second plastic layer 2 PL.
  • the second intermediate layer 2 IL can be formed to have a single- or multi-layer structure by using an amorphous material such as a-silicon or a metal thin film such as ITO, Al, Ti, or Mo by using CVD, PECVD, or ALD.
  • the second barrier layer 2 BL is formed on the second intermediate layer 2 IL.
  • the second barrier layer 2 BL can be formed of the same material by using the same method as those of the first barrier layer 1 BL.
  • FIG. 6A is a plan view for explaining a process of forming a plurality of units of OLED displays 100 on the mother flexible substrate MFS.
  • FIG. 6B is a cross-sectional view taken along line VIB-VIB of FIG. 6A .
  • the plurality of units of OLED displays 100 including the TFT layer 110 and the OLED layer 120 are formed on the mother flexible substrate MFS.
  • any of various methods can be used according to the semiconductor layer 111 (see FIG. 2 ) of the TFT layer 110 .
  • the semiconductor layer 111 is formed of poly-silicon, a-silicon, or conductive oxide
  • any of deposition methods such as PECVD, atmospheric pressure CVD (APCVD), low pressure CVD (LPCVD) can be used.
  • APCVD atmospheric pressure CVD
  • LPCVD low pressure CVD
  • coating or printing can be used.
  • any of various crystallization methods such as rapid thermal annealing (RTA), solid phase crystallization (SPC), excimer laser annealing (ELA), metal induced crystallization (MIC), metal induced lateral crystallization (MILC), or sequential lateral solidification (SLS) can be used.
  • RTA rapid thermal annealing
  • SPC solid phase crystallization
  • ELA excimer laser annealing
  • MILC metal induced lateral crystallization
  • SLS sequential lateral solidification
  • the gate electrode 113 (see FIG. 2 ), the source electrode 115 (see FIG. 2 ), the drain electrode 116 (see FIG. 2 ), and various wirings (not shown) can be deposited on the TFT layer 110 by using CVD, PECVD, or ALD, and then can be patterned by using photolithography.
  • the layer 123 (see FIG. 2 ) including the organic emission layer of the OLED layer 120 can be formed by using any of various methods such as deposition, coating, printing, or light-heat transfer.
  • a buffer layer (not shown) can be further interposed between the second barrier layer 2 BL and the TFT layer 110 .
  • FIG. 7 is a cross-sectional view for explaining a process of forming the thin-film encapsulation layer 130 that encapsulates the plurality of OLED layers 120 on the mother flexible substrate MFS.
  • the thin-film encapsulation layer 130 can be formed of a plurality of inorganic layers or a combination of an inorganic layer and an organic layer as described above.
  • the inorganic layer and the organic layer can be formed by using any of various methods such as CVD, PECVD, or sputtering.
  • one thin-film encapsulation layer 130 commonly covers the plurality units of OLED displays 100 in FIG. 7
  • the described technology is not limited thereto. That is, the thin-film encapsulation layer 130 can individually cover the units of OLED displays 100 .
  • FIGS. 8 and 9 are cross-sectional views for explaining a process of separating the mother flexible substrate MFS from the glass substrate GS.
  • laser light is emitted to a surface of the glass substrate GS that is opposite to a surface of the glass substrate GS on which the mother flexible substrate MFS is formed.
  • UV light can be emitted as laser light by using an excimer laser.
  • the emitted UV light is transmitted through the glass substrate GS and is absorbed by the first plastic layer 1 PS and the second plastic layer 2 PS.
  • a binding force between the first and second plastic layers 1 PS and 2 PS and the glass substrate GS is reduced due to absorbed energy.
  • the first barrier layer 1 BL or the second barrier layer 2 BL is easily broken by an external tensile force. Accordingly, the mother flexible substrate MFS can be separated from the glass substrate GS by appropriately applying an external tensile force to the mother flexible substrate MFS and the glass substrate GS in a direction marked by an arrow of FIG. 9 .
  • a first protective film 140 can be attached to the thin-film encapsulation layer 130 .
  • the first protective film 140 can be used as an optical member such as a polarization film.
  • FIG. 10 is a cross-sectional view for explaining a process of dividing the OLED layer 120 that is formed on the mother flexible substrate MFS into the plurality of OLED displays 100 .
  • a second protective film 150 can be attached to a rear surface of the mother flexible substrate MFS and then the mother flexible substrate MFS can be divided into the plurality of OLED displays 100 .
  • the second protective film 150 can be used as an optical member such as a polarization film.
  • the OLED layer 120 that is formed on the mother flexible substrate MFS can be divided into the plurality of OLED displays 100 by cutting the mother flexible substrate MFS along a cutting line CL of a non-display area between the OLED displays 100 by using a cutting wheel or a laser cutter.
  • FIGS. 5A through 10 Although two plastic layers and two barrier layers are alternately stacked in FIGS. 5A through 10 , more plastic layers and barrier layers may be stacked if necessary. In these embodiments, an intermediate layer can be further interposed between adjacent plastic and barrier layers if necessary.
  • the first intermediate layer 1 IL and the second intermediate layer 2 IL can be patterned to be formed only in an area corresponding to an area where the OLED layer 120 is formed.
  • the described technology has been explained based on the structure of an OLED display in the above exemplary embodiments, the described technology may be applied to various flexible displays as well as OLED displays.
  • the described technology may be applied to various electronic devices such as mobile devices, navigation systems, video cameras, laptops, tablet computers, flat-screen TVs, and video projectors.
  • a flexible substrate is formed by alternately stacking two plastic layers and two barrier layers and interposing an intermediate layer between adjacent plastic and barrier layers, the average water vapor transmission path is increased, thereby preventing an OLED from being degraded.
  • the adhesive force between a lower barrier layer and an upper plastic layer that is adjacent to the lower barrier layer is increased, thereby preventing the OLED display from undergoing detachment defects.
  • the adhesive force between the upper plastic layer and an upper barrier layer that is adjacent to the upper plastic layer is increased, thereby preventing the OLED display from undergoing detachment defects.
  • Each barrier layer is formed to include silicon nitride and the silicon nitride density in a barrier layer that is far from the OLED is less than the silicon nitride density in a barrier layer that is close to the OLED, thereby improving TFT characteristics and reducing a deviation of a WVTR of the flexible substrate.

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KR102313361B1 (ko) 2021-10-18
TW201620130A (zh) 2016-06-01
KR20160059064A (ko) 2016-05-26
CN105609530B (zh) 2020-10-30
TWI688089B (zh) 2020-03-11
US20160141551A1 (en) 2016-05-19
CN105609530A (zh) 2016-05-25
EP3021371B1 (en) 2017-08-30

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