US9252206B2 - Unit for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide - Google Patents

Unit for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide Download PDF

Info

Publication number
US9252206B2
US9252206B2 US13/995,715 US201113995715A US9252206B2 US 9252206 B2 US9252206 B2 US 9252206B2 US 201113995715 A US201113995715 A US 201113995715A US 9252206 B2 US9252206 B2 US 9252206B2
Authority
US
United States
Prior art keywords
silicon carbide
crystal plane
epitaxial growth
crystal
diffraction peak
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related, expires
Application number
US13/995,715
Other languages
English (en)
Other versions
US20130285060A1 (en
Inventor
Satoshi Torimi
Satoru Nogami
Tsuyoshi Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyo Tanso Co Ltd
Original Assignee
Toyo Tanso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2010288469A external-priority patent/JP5707612B2/ja
Priority claimed from JP2010288475A external-priority patent/JP5707613B2/ja
Priority claimed from JP2010288472A external-priority patent/JP5644004B2/ja
Priority claimed from JP2010288479A external-priority patent/JP5707614B2/ja
Application filed by Toyo Tanso Co Ltd filed Critical Toyo Tanso Co Ltd
Assigned to TOYO TANSO CO., LTD. reassignment TOYO TANSO CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MATSUMOTO, TSUYOSHI, NOGAMI, SATORU, TORIMI, Satoshi
Publication of US20130285060A1 publication Critical patent/US20130285060A1/en
Application granted granted Critical
Publication of US9252206B2 publication Critical patent/US9252206B2/en
Expired - Fee Related legal-status Critical Current
Adjusted expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide

Definitions

  • This invention relates to a unit for liquid phase epitaxial growth of a monocrystalline silicon carbide and a method for liquid phase epitaxial growth of a monocrystalline silicon carbide using the same.
  • Silicon carbide (SiC) is considered to be capable of achieving high-temperature resistance, high voltage resistance, high-frequency resistance, and high environment resistance each of which could not be achieved by conventional semiconductor materials, such as silicon (Si) and gallium arsenide (GaAs). Therefore, silicon carbide is expected as a semiconductor material for next-generation power devices and a semiconductor material for high-frequency devices.
  • the seeded sublimation growth method (modified Lely method) is conventionally proposed as a method for growing a monocrystalline silicon carbide, such as for example in Patent Literature 1 below.
  • a seed material made of a monocrystalline silicon carbide is placed in a low-temperature zone of a crucible and a powder of source material containing Si as a source material is placed in a high-temperature zone thereof.
  • the interior of the crucible is brought into an inert atmosphere and heated to a high temperature of 1450° C. to 2400° C. to sublimate the powder of source material placed in the high-temperature zone.
  • silicon carbide can be epitaxially grown on the surface of the seed material placed in the low-temperature zone.
  • the modified Lely method is a method of growing silicon carbide crystals by providing a temperature gradient in the gas phase. Therefore, in the case of using the modified Lely method, a large apparatus is required for epitaxial growth of silicon carbide and the process for epitaxial growth of silicon carbide is difficult to control. This presents a problem of rise in cost of producing a silicon carbide epitaxial growth film. In addition, epitaxial growth of silicon carbide in the gas phase is nonequilibrium. Therefore, crystal defects are likely to occur in the silicon carbide epitaxial growth film being formed and there also arises a problem of ease of roughening of the crystal structure.
  • MSE metastable solvent epitaxy
  • a seed material made of a crystalline silicon carbide such as a monocrystalline silicon carbide or a polycrystalline silicon carbide, and a feed material made of silicon carbide are faced each other at a distance as small as, for example, 100 ⁇ m or less and a Si melt layer is interposed between them. Then, these materials are subjected to heating treatment in a vacuum, high-temperature environment to epitaxially grow silicon carbide on the surface of the seed material.
  • MSE also has the advantage of being capable of forming a silicon carbide epitaxial growth film even on a large-area seed substrate and the advantage of lowering the temperature for the process of epitaxially growing silicon carbide because the extremely small thickness of the Si melt layer facilitates the diffusion of carbon from the feed material.
  • MSE is considered to be an extremely useful method as the method for epitaxial growth of a monocrystalline silicon carbide and active research on MSE has been carried out.
  • Patent Literature 1 JP-A-2005-97040
  • Patent Literature 2 JP-A-2008-230946
  • Patent Literature 2 describes that a feed substrate and a seed substrate are made different from each other in free energy by making the feed substrate and the seed substrate different in crystal polymorph. More specifically, the literature describes that if the feed substrate is formed of a polycrystalline 3C—SiC substrate, the seed substrate is formed such as of a monocrystalline 4H—SiC substrate having a lower free energy than the 3C—SiC substrate.
  • a polycrystalline 3C—SiC substrate can be easily produced by CVD. Therefore, as described in Patent Literature 2, the use of a 3C—SiC substrate as the feed substrate enables a low cost of formation of a silicon carbide epitaxial growth film.
  • the present invention has been made in view of the foregoing points and an object thereof is to reduce the cost of liquid phase epitaxial growth of a monocrystalline silicon carbide.
  • the inventors have found through intensive studies that, among polycrystalline silicon carbide materials with a 3C crystal polymorph, there are materials likely to be eluted into a silicon melt layer and materials less likely to be eluted into a silicon melt layer and that if a polycrystalline silicon carbide material less likely to be eluted into a silicon melt layer is used as a seed material and a polycrystalline silicon carbide material likely to be eluted into a silicon melt layer is used as a feed material, liquid phase epitaxial growth of a monocrystalline silicon carbide can be suitably performed. As a result, the inventors have led to the accomplishment of the invention.
  • a unit for liquid phase epitaxial growth of a monocrystalline silicon carbide is a unit used in a method for liquid phase epitaxial growth of a monocrystalline silicon carbide and including a seed material and a feed material.
  • the feed material includes a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph.
  • the feed material is such that when the surface layer thereof is subjected to X-ray diffraction, a diffraction peak corresponding to a (111) crystal plane and a diffraction peak other than the diffraction peak corresponding to the (111) crystal plane are observed as diffraction peaks corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph.
  • the seed material includes a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph.
  • the seed material is such that when the surface layer thereof is subjected to X-ray diffraction, a first-order diffraction peak corresponding to a (111) crystal plane is observed as a diffraction peak corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph but no other first-order diffraction peak having a diffraction intensity of 10% or more of the diffraction intensity of the first-order diffraction peak corresponding to the (111) crystal plane is observed.
  • the seed material of the unit for liquid phase epitaxial growth of a monocrystalline silicon carbide according to the present invention is relatively less likely to cause elution into the silicon melt layer, but the feed material thereof is relatively likely to cause elution into the silicon melt layer.
  • the unit for liquid phase epitaxial growth of a monocrystalline silicon carbide according to the present invention liquid phase epitaxial growth of a monocrystalline silicon carbide can be suitably performed.
  • both the seed material and the feed material have their respective surface layers containing a polycrystalline silicon carbide with a 3C crystal polymorph, each of the seed material and the feed material can be produced with ease at low cost by CVD (chemical vapor deposition).
  • the cost of forming an epitaxial growth film of a monocrystalline silicon carbide can be reduced.
  • the reason why the elution into the silicon melt layer becomes less likely to occur when no other first-order diffraction peak having a diffraction intensity of 10% or more of the diffraction intensity of the first-order diffraction peak corresponding to the (111) crystal plane is observed can be that the degree of exposure of the (111) crystal plane less likely to be eluted into the silicon melt layer than the other crystal planes is increased.
  • the reason why the elution into the silicon melt layer becomes likely to occur when a diffraction peak other than the diffraction peak corresponding to the (111) crystal plane is observed can be that the degree of exposure of crystal planes different from the (111) crystal plane and more likely to be eluted into the silicon melt layer than the (111) crystal plane is increased.
  • an epitaxial growth film of a hexagonal monocrystalline silicon carbide having superior properties can be formed.
  • the reason for this is that because the (111) crystal plane is equivalent to the (0001) hexagonal crystal plane, stacking error easily occurs.
  • the epitaxial growth of a hexagonal monocrystalline silicon carbide suitably progresses.
  • method for liquid phase epitaxial growth refers to a method in which the seed material and the feed material are heated in a position facing each other with a silicon melt layer therebetween to form a concentration gradient of graphite melting in the silicon melt layer and a monocrystalline silicon carbide is epitaxially grown on the seed material using the concentration gradient.
  • X-ray diffraction in the present invention refers to diffraction using 8.048 keV X-rays (CuK ⁇ rays).
  • feed material in the present invention refers to a material capable of feeding ingredients for epitaxial growth of a monocrystalline silicon carbide, such for example as Si, C, and SiC.
  • seed material refers to a material on the surface of which a monocrystalline silicon carbide can grow.
  • diffraction peak is observed means that a diffraction peak having a peak intensity of 3% or more of the peak intensity of a first-order diffraction peak corresponding to the (111) crystal plane is observed.
  • diffraction peak corresponding to the (111) crystal plane includes first-order and higher-order diffraction peaks corresponding to the (111) crystal plane.
  • the first-order diffraction peak corresponding to the (111) crystal plane upon X-ray diffraction of the surface layer of the feed material is preferably a main diffraction peak having the highest diffraction intensity among first-order diffraction peaks corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph.
  • the diffraction peak observed upon X-ray diffraction of the surface layer of the feed material and other than the diffraction peak corresponding to the (111) crystal plane preferably includes at least one diffraction peak, each diffraction peak corresponding to one of a (200) crystal plane, a (220) crystal plane, and a (311) crystal plane.
  • the rate of epitaxial growth of the monocrystalline silicon carbide can be more effectively increased.
  • the reason for this can be that the (200) crystal plane, the (220) crystal plane, and the (311) crystal plane are more likely to be eluted into the silicon melt layer than the (111) crystal plane.
  • the diffraction peak observed upon X-ray diffraction of the surface layer of the feed material and other than the diffraction peak corresponding to the (111) crystal plane more preferably includes diffraction peaks, each corresponding to one of the (200) crystal plane, the (220) crystal plane, and the (311) crystal plane.
  • the sum of the intensities of first-order diffraction peaks other than the first-order diffraction peak corresponding to the (111) crystal plane upon X-ray diffraction of the surface layer of the feed material is preferably 10% or more of the sum of the intensities of all the first-order diffraction peaks and more preferably 20% or more thereof.
  • each of the feed material and the seed material includes a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph and is such that upon X-ray diffraction of the surface layer at least one first-order diffraction peak is observed, each first-order diffraction peak corresponding to one of a (111) crystal plane, a (200) crystal plane, a (220) crystal plane, and a (311) crystal plane, and the average crystallite diameter calculated from the at least one first-order diffraction peak of the feed material is smaller than that calculated from the at least one first-order diffraction peak of the seed material.
  • the rate of epitaxial growth of the monocrystalline silicon carbide can be still more effectively increased.
  • the reason for this can be that the surface layer of the seed material has a smaller proportion of grain boundaries likely to be eluted into the silicon melt layer than the surface layer of the feed material, which makes it possible to increase the difference in elutability into the silicon melt layer between the seed material and the feed material.
  • the average crystallite diameter calculated from the first-order diffraction peak observed upon X-ray diffraction of the surface layer of the feed material and corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph is more preferably 700 A or less.
  • the rate of epitaxial growth of the monocrystalline silicon carbide can be still more effectively increased.
  • the reason for this can be that the surface layer of the feed material is increased in proportion of high-reactivity grain boundaries of polycrystalline silicon carbide crystals, which makes it more likely to cause the elution from the surface layer of the feed material into the silicon melt layer.
  • the feed material is preferably such that when the surface layer thereof is subjected to X-ray diffraction, a first-order diffraction peak corresponding to the (111) crystal plane and at least one first-order diffraction peak each corresponding to one of the (200) crystal plane, the (220) crystal plane, and the (311) crystal plane are observed and (I 1 /I 0 ) ⁇ 1 ⁇ D 2 is equal to or smaller than 10 8 ,
  • I 0 represents the sum of the intensity of the first-order diffraction peak corresponding to the (111) crystal plane and the total intensity of the at least one first-order diffraction peak each corresponding to one of the (200) crystal plane, the (220) crystal plane, and the (311) crystal plane;
  • I 1 represents the total intensity of the at least one first-order diffraction peak each corresponding to one of the (200) crystal plane, the (220) crystal plane, and the (311) crystal plane;
  • D represents the average crystallite diameter calculated from the at least one first-order diffraction peak each corresponding to one of the (200) crystal plane, the (220) crystal plane, and the (311) crystal plane.
  • the rate of epitaxial growth of the monocrystalline silicon carbide can be still more effectively increased.
  • the reason for this can be that the surface layer of the feed material is increased in proportion of (200), (220), and (311) crystal planes having relatively high reactivity and is decreased in average crystallite diameter.
  • the average crystallite diameter calculated from the first-order diffraction peak observed upon X-ray diffraction of the surface layer thereof and corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph is more preferably more than 700 A.
  • the rate of epitaxial growth of the monocrystalline silicon carbide can be still more effectively increased.
  • the reason for this can be that the surface layer of the seed material is decreased in proportion of high-reactivity grain boundaries of polycrystalline silicon carbide crystals, which makes it still less likely to cause the elution from the surface layer of the seed material into the silicon melt layer.
  • ⁇ represents the full width at half-maximum
  • ⁇ represents the Bragg angle of the diffraction line
  • ⁇ represents the wavelength of X-ray used for measurement
  • ⁇ represents the value of inhomogeneous strain of the crystal
  • ⁇ represents the average crystallite diameter
  • the feed material is preferably smaller than the seed material in terms of proportion of (111) crystal planes having an orientation angle of 67.5° or more in the (111) crystal planes observed by X-ray diffraction of the surface layer.
  • the rate of epitaxial growth of the monocrystalline silicon carbide can be still more effectively increased.
  • the reason for this can be that the feed material becomes higher than the seed material in terms of degree of exposure of crystal planes having lower stability than the (111) crystal plane in the crystals whose (111) crystal planes are exposed, which makes it possible to increase the difference in elutability into the silicon melt layer between the seed material and the feed material.
  • the proportion of (111) crystal planes having an orientation angle of 67.5° or more in the (111) crystal planes observed by X-ray diffraction of the surface layer of the feed material is more preferably less than 80%. Furthermore, the proportion of (111) crystal planes having an orientation angle of 67.5° or more in the (111) crystal planes observed by X-ray diffraction of the surface layer of the seed material is more preferably 80% or more.
  • an LO peak derived from a polycrystalline silicon carbide with a 3C crystal polymorph be observed upon Raman spectroscopic analysis of each of the surface layers of the feed material and the seed material with an excitation wavelength of 532 nm, and that the feed material be smaller than the seed material in terms of absolute amount of shift of the LO peak from 972 cm ⁇ 1 .
  • the seed material becomes still less likely to cause elution into the silicon melt layer and the feed material becomes still more likely to cause elution into the silicon melt layer.
  • the epitaxial growth film of the monocrystalline silicon carbide can be suitably formed at a higher rate of growth.
  • the reason why a larger absolute amount of shift of the LO peak from 972 cm ⁇ 1 makes it less likely to cause the elution into the silicon melt layer can be that the internal stress of the surface layer is increased to increase the denseness of the surface layer.
  • the reason why a smaller absolute amount of shift thereof makes it more likely to cause the elution into the silicon melt layer can be that the internal stress of the surface layer is reduced to reduce the denseness of the surface layer.
  • a majority of the crystal planes exposed on the surface layer of the seed material will have a shape similar to the (0001) hexagonal crystal plane. This also can be considered to contribute to the reduced elutability of the seed material.
  • LO peak derived from a polycrystalline silicon carbide refers to a peak which is derived from the longitudinal optical mode among optical modes of oscillation between the two atoms of Si—C in the silicon carbide crystal and generally, in the case of a 3C polymorph, appears at 972 cm ⁇ 1 .
  • the absolute amount of shift of the LO peak from 972 cm ⁇ 1 in the feed material is preferably less than 4 cm ⁇ 1 .
  • the absolute amount of shift of the LO peak from 972 cm ⁇ 1 in the seed material is preferably 4 cm ⁇ 1 or more.
  • the full width at half-maximum of the LO peak in the feed material is preferably 7 cm ⁇ 1 or more.
  • the full width at half-maximum of the LO peak in the seed material is preferably 15 cm ⁇ 1 or less.
  • the reason why the rate of liquid phase epitaxial growth of the monocrystalline silicon carbide can be further increased when the full width at half-maximum of the LO peak in the feed material is 7 cm ⁇ 1 or more can be that larger full widths at half-maximum of the LO peak can be caused by lower degrees of crystallinity or higher impurity concentrations of the polycrystalline silicon carbide in the surface layer, which makes it more likely to cause the elution from the surface layer.
  • the reason why the rate of liquid phase epitaxial growth of the monocrystalline silicon carbide can be further increased when the full width at half-maximum of the LO peak in the seed material is 15 cm ⁇ 1 or less can be that smaller full widths at half-maximum of the LO peak can be caused by higher degrees of crystallinity or lower impurity concentrations of the polycrystalline silicon carbide in the surface layer, which makes it still less likely to cause the elution from the surface layer.
  • the surface layer of at least one of the feed material and the seed material preferably contains a polycrystalline silicon carbide with a 3C crystal polymorph as a major ingredient and is preferably substantially made of the polycrystalline silicon carbide with a 3C crystal polymorph.
  • major ingredient in the present invention refers to an ingredient which is contained in a proportion of 50% by mass or more in the surface layer.
  • substantially made of the polycrystalline silicon carbide with a 3C crystal polymorph means that the surface layer contains no ingredient other than the polycrystalline silicon carbide with a 3C crystal polymorph, except for impurities.
  • the content of impurities in the surface layer when “substantially made of the polycrystalline silicon carbide with a 3C crystal polymorph” is generally 5% by mass or less.
  • At least one of the feed material and the seed material may include a support member and a polycrystalline silicon carbide film formed on the support member and forming the surface layer.
  • the polycrystalline silicon carbide film preferably has a thickness within a range of 30 ⁇ m to 800 ⁇ m.
  • At least one of the feed material and the seed material may be formed of a polycrystalline silicon carbide material containing a polycrystalline silicon carbide with a 3C crystal polymorph.
  • a method for liquid phase epitaxial growth of a monocrystalline silicon carbide according to the present invention is a method for liquid phase epitaxial growth of a monocrystalline silicon carbide using the unit for liquid phase epitaxial growth of a monocrystalline silicon carbide according to the present invention.
  • the seed material and the feed material are heated with the surface layers of the seed material and the feed material facing each other through a silicon melt layer to epitaxially grow a monocrystalline silicon carbide on the surface layer of the seed material.
  • an epitaxial growth film of the monocrystalline silicon carbide can be formed at low cost.
  • the present invention can reduce the cost of liquid phase epitaxial growth of a monocrystalline silicon carbide.
  • FIG. 1 is a schematic view for illustrating a method for epitaxial growth of a monocrystalline silicon carbide in one embodiment of the present invention.
  • FIG. 2 is a schematic cross-sectional view of a feed substrate in the one embodiment of the present invention.
  • FIG. 3 is a schematic cross-sectional view of a seed substrate in the one embodiment of the present invention.
  • FIG. 4 is a schematic cross-sectional view of a feed substrate in a modification.
  • FIG. 5 is a schematic cross-sectional view of a seed substrate in the modification.
  • FIG. 6 is an X-ray diffraction chart relating to Samples 1 to 4 .
  • FIG. 7 is a schematic diagram for illustrating a method for measuring the orientation of a (111) crystal plane.
  • FIG. 8 is a graph showing the orientation of the (111) crystal plane in Sample 1 .
  • FIG. 9 is a graph showing the orientation of the (111) crystal plane in Sample 2 .
  • FIG. 10 is a graph showing the orientation of the (111) crystal plane in Sample 3 .
  • FIG. 11 is a graph showing the orientation of the (111) crystal plane in Sample 4 .
  • FIG. 12 is a graph showing the results of Raman spectroscopic analysis of the surface layers of Samples 1 to 4 .
  • FIG. 13 is a graph showing the amounts ( ⁇ ) of shift of LO peaks from 972 cm ⁇ 1 in Samples 1 to 4 and the full widths at half-maximum (FWHM) of the LO peaks.
  • FIG. 14 is a graph showing the rates of growth of monocrystalline silicon carbide epitaxial growth films in Samples 1 , 2 , and 4 .
  • FIG. 15 is a graph showing the rates of growth of monocrystalline silicon carbide epitaxial growth films in Samples 3 and 4 .
  • FIG. 16 is a SEM photograph of a seed substrate (Sample 3 ) after being subjected to an experiment of liquid phase epitaxial growth in an example.
  • FIG. 17 is a SEM photograph of a seed substrate (Sample 2 ) after being subjected to an experiment of liquid phase epitaxial growth in a comparative example.
  • FIG. 1 is a schematic view for illustrating a method for epitaxial growth of a monocrystalline silicon carbide in this embodiment.
  • the embodiment describes an example in which an epitaxial growth film of a monocrystalline silicon carbide is formed using MSE.
  • a unit 14 for liquid phase epitaxial growth of a monocrystalline silicon carbide including a seed substrate 12 as the seed material and a feed substrate 11 as the feed material, is arranged in a vessel 10 so that a principal surface 12 a of the seed substrate 12 and a principal surface 11 a of the feed substrate 11 face each other with a silicon plate therebetween.
  • the seed substrate 12 and the feed substrate 11 are heated to melt the silicon plate.
  • the seed substrate 12 and the feed substrate 11 are faced each other with a silicon melt layer 13 therebetween.
  • source materials including silicon, carbon, and silicon carbide are eluted from the seed substrate 12 into the silicon melt layer 13 .
  • a concentration gradient is formed in the silicon melt layer 13 .
  • a monocrystalline silicon carbide epitaxially grows on the principal surface 12 a of the seed substrate 12 , resulting in the formation of a monocrystalline silicon carbide epitaxial growth film 20 .
  • the thickness of the silicon melt layer 13 is extremely small and can be, for example, about 10 ⁇ m to about 100 ⁇ m.
  • FIG. 2 shows a schematic cross-sectional view of the feed substrate 11 .
  • FIG. 3 shows a schematic cross-sectional view of the seed substrate 12 .
  • Each of the feed substrate 11 and the seed substrate 12 includes a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph.
  • the feed substrate 11 and the seed substrate 12 include graphite-made support members 11 b and 12 b , respectively, and polycrystalline silicon carbide films 11 c and 12 c , respectively.
  • the graphite-made support members 11 b and 12 b have high thermal resistance so that they can sufficiently withstand the process for epitaxial growth of silicon carbide.
  • the graphite-made support members 11 b and 12 b have a coefficient of thermal expansion similar to that of the monocrystalline silicon carbide epitaxial growth film 20 . Therefore, with the use of the graphite-made support members 11 b and 12 b , the silicon carbide epitaxial growth film 20 can be suitably formed.
  • graphite examples include natural graphite, artificial graphite, petroleum coke, coal coke, pitch coke, carbon black, and mesocarbon.
  • An example of a method for producing the graphite-made support member 12 b is a production method described in JP-A-2005-132711.
  • the polycrystalline silicon carbide films 11 c and 12 c are formed to cover the principal and side surfaces of the support members 11 b and 12 b , respectively.
  • Each of the polycrystalline silicon carbide films 11 c and 12 c contain a polycrystalline silicon carbide.
  • the surface layers of the feed substrate 11 and the seed substrate 12 are formed of the polycrystalline silicon carbide films 11 c and 12 c , respectively.
  • the polycrystalline silicon carbide films 11 c and 12 c in this embodiment preferably contain polycrystalline 3C—SiC as a major ingredient and are preferably substantially made of polycrystalline 3C—SiC.
  • the surface layer of each of the feed substrate 11 and the seed substrate 12 preferably contains polycrystalline 3C—SiC as a major ingredient and is preferably substantially made of polycrystalline 3C—SiC.
  • the rate of growth of the monocrystalline silicon carbide epitaxial growth film 20 can be increased.
  • Each of the thicknesses t 11 and t 12 of the polycrystalline silicon carbide films 11 c and 12 c is preferably within a range of 30 ⁇ m to 800 ⁇ m, more preferably within a range of 40 ⁇ m to 600 ⁇ m, and still more preferably within a range of 100 ⁇ m to 300 ⁇ m. If the thicknesses t 11 and t 12 of the polycrystalline silicon carbide films 11 c and 12 c are too small, the graphite-made support member 12 b may be exposed during the formation of a monocrystalline silicon carbide epitaxial growth film 20 , thus causing elution from the support members 11 b and 12 b and resulting in failure to obtain a suitable monocrystalline silicon carbide epitaxial growth film 20 . On the other hand, if the thicknesses t 11 and t 12 of the polycrystalline silicon carbide films 11 c and 12 c are too large, the polycrystalline silicon carbide film 12 c may be likely to produce cracks.
  • the polycrystalline silicon carbide film 12 c can be formed, for example, by CVD (chemical vapor deposition) or sputtering. Particularly in this embodiment, since the polycrystalline silicon carbide films 11 c and 12 c contain polycrystalline 3C—SiC, dense polycrystalline silicon carbide films 11 c and 12 c can be formed with ease at low cost by CVD.
  • the polycrystalline silicon carbide film 11 c forming the surface layer of the feed substrate 11 is such that when it is subjected to X-ray diffraction, a diffraction peak corresponding to the (111) crystal plane and a diffraction peak other than the diffraction peak corresponding to the (111) crystal plane are observed as diffraction peaks corresponding to a crystal polymorph of polycrystalline 3C—SiC.
  • the polycrystalline silicon carbide film 11 c is preferably such that when it is subjected to X-ray diffraction, a diffraction peak corresponding to the (111) crystal plane and a first-order diffraction peak corresponding to a crystal plane other than the (111) crystal plane and having a greater intensity than 10% of the intensity of the first-order diffraction peak corresponding to the (111) crystal plane are observed as diffraction peaks corresponding to a crystal polymorph of polycrystalline 3C—SiC.
  • Diffraction peaks corresponding to a crystal polymorph of polycrystalline 3C—SiC include, as also shown in Table 1 below, a diffraction peak corresponding to the (111) crystal plane, a diffraction peak corresponding to the (200) crystal plane, a diffraction peak corresponding to the (220) crystal plane, and a diffraction peak corresponding to a diffraction peak corresponding to the (311) crystal plane.
  • the polycrystalline silicon carbide film 11 c is such that when it is subjected to X-ray diffraction, a diffraction peak corresponding to the (111) crystal plane and at least one diffraction peak each corresponding to one of the (200) crystal plane, the (220) crystal plane, and the (311) crystal plane are observed as diffraction peaks corresponding to a crystal polymorph of polycrystalline 3C—SiC.
  • the polycrystalline silicon carbide film 12 c forming the surface layer of the seed substrate 12 is such that when it is subjected to X-ray diffraction, a first-order diffraction peak corresponding to the (111) crystal plane is observed as a diffraction peak corresponding to a crystal polymorph of polycrystalline 3C—SiC but no other first-order diffraction peak having a diffraction intensity of 10% or more of the diffraction intensity of the first-order diffraction peak corresponding to the (111) crystal plane is observed.
  • the seed material 12 is relatively less likely to cause elution into the silicon melt layer 13
  • the feed material 11 is relatively likely to cause elution into the silicon melt layer 13 .
  • a liquid phase epitaxial growth film 20 of a monocrystalline silicon carbide can be suitably formed.
  • both the seed material 12 and the feed material 11 have their respective surface layers containing a polycrystalline silicon carbide with a 3C crystal polymorph. Therefore, each of the seed material 12 and the feed material 11 can be formed with ease at low cost by CVD.
  • the cost of forming an epitaxial growth film 20 of a monocrystalline silicon carbide can be reduced.
  • the reason why the elution into the silicon melt layer 13 becomes less likely to occur when no other first-order diffraction peak having a diffraction intensity of 10% or more of the diffraction intensity of the first-order diffraction peak corresponding to the (111) crystal plane is observed can be that the degree of exposure of the (111) crystal plane less likely to be eluted into the silicon melt layer than the other crystal planes is increased.
  • the reason why the elution into the silicon melt layer 13 becomes likely to occur when a diffraction peak other than the diffraction peak corresponding to the (111) crystal plane is observed can be that the degree of exposure of crystal planes different from the (111) crystal plane and more likely to be eluted into the silicon melt layer than the (111) crystal plane is increased.
  • an epitaxial growth film 20 of a hexagonal monocrystalline silicon carbide having superior properties can be formed.
  • the reason for this can be that because the (111) crystal plane is equivalent to the (0001) hexagonal crystal plane, the use of the seed material 12 having a large degree of exposure of the (111) crystal plane suitably promotes the epitaxial growth of a hexagonal monocrystalline silicon carbide.
  • Typical examples of the hexagonal monocrystalline silicon carbide include a monocrystalline silicon carbide with a 4H crystal polymorph and a monocrystalline silicon carbide with a 6H crystal polymorph.
  • These monocrystalline silicon carbides with a 4H or 6H crystal polymorph (4H—SiC and 6H—SiC) have the advantage of enabling semiconductor devices having a larger band gap and higher thermal resistance than other silicon carbides with different crystal polymorphs.
  • a first-order diffraction peak corresponding to the (111) crystal plane is preferably a main diffraction peak having the highest diffraction intensity.
  • the polycrystalline silicon carbide film 11 c is such that when subjected to X-ray diffraction, in addition to a diffraction peak corresponding to the (111) crystal plane, at least one diffraction peak each corresponding to one of the (200) crystal plane, the (220) crystal plane, and the (311) crystal plane is preferably observed as a diffraction peak corresponding to a crystal polymorph of polycrystalline 3C-silicon carbide and, more preferably, diffraction peaks each corresponding to one of the (200) crystal plane, the (220) crystal plane, and the (311) crystal plane are observed.
  • the rate of growth of the monocrystalline silicon carbide epitaxial growth film 20 can be further increased.
  • the reason for this can be that, among the crystal planes other than the (111) crystal plane, the (200) crystal plane, the (220) crystal plane, and the (311) crystal plane have particularly high reactivity and thus are more likely to cause the elution into the silicon melt layer 13 .
  • the sum of the intensities of first-order diffraction peaks other than the first-order diffraction peak corresponding to the (111) crystal plane is preferably 10% or more of the sum of the intensities of all the first-order diffraction peaks and more preferably 20% or more thereof.
  • the rate of growth of the monocrystalline silicon carbide epitaxial growth film 20 can be still further increased.
  • the average crystallite diameter calculated from the first-order diffraction peak observed by X-ray diffraction of the polycrystalline silicon carbide film 11 c is preferably smaller than the average crystallite diameter calculated from the first-order diffraction peak observed by X-ray diffraction of the polycrystalline silicon carbide film 12 c .
  • the rate of epitaxial growth of the monocrystalline silicon carbide can be still more effectively increased.
  • the reason for this can be that the polycrystalline silicon carbide film 12 c has a smaller proportion of grain boundaries likely to be eluted into the silicon melt layer than the polycrystalline silicon carbide film 11 c , which makes it possible to increase the difference in elutability into the silicon melt layer 13 between the seed material 12 and the feed material 11 .
  • the polycrystalline silicon carbide film 11 c is preferably such that the average crystallite diameter calculated from the first-order diffraction peak observed by X-ray diffraction and corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph is 700 A or less. In this case, the rate of growth of the monocrystalline silicon carbide epitaxial growth film 20 can be still further increased. The reason for this can be that the polycrystalline silicon carbide film 11 c is increased in proportion of high-reactivity grain boundaries of polycrystalline silicon carbide crystals, which makes it more likely to cause the elution from the polycrystalline silicon carbide film 11 c.
  • the polycrystalline silicon carbide film 11 c is preferably such that when subjected to X-ray diffraction, a first-order diffraction peak corresponding to the (111) crystal plane and at least one first-order diffraction peak each corresponding to one of the (200) crystal plane, the (220) crystal plane, and the (311) crystal plane are observed and (I 1 /I 0 ) ⁇ 1 ⁇ D 2 is equal to or smaller than 10 8 ,
  • I 0 represents the sum of the intensity of the first-order diffraction peak corresponding to the (111) crystal plane and the total intensity of the at least one first-order diffraction peak each corresponding to one of the (200) crystal plane, the (220) crystal plane, and the (311) crystal plane;
  • I 1 represents the total intensity of the at least one first-order diffraction peak each corresponding to one of the (200) crystal plane, the (220) crystal plane, and the (311) crystal plane;
  • D represents the average crystallite diameter calculated using the Hall's equation from the at least one first-order diffraction peak each corresponding to one of the (200) crystal plane, the (220) crystal plane, and the (311) crystal plane.
  • the rate of growth of the monocrystalline silicon carbide epitaxial growth film 20 can be still more effectively increased.
  • the reason for this can be that the polycrystalline silicon carbide film 11 c is increased in proportion of (200), (220), and (311) crystal planes having relatively high reactivity and is decreased in average crystallite diameter.
  • the polycrystalline silicon carbide film 12 c is preferably such that the average crystallite diameter calculated from the first-order diffraction peak observed by X-ray diffraction and corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph is more than 700 A.
  • the rate of growth of the monocrystalline silicon carbide epitaxial growth film 20 can be still further increased.
  • the reason for this can be that the polycrystalline silicon carbide film 12 c is decreased in proportion of high-reactivity grain boundaries of polycrystalline silicon carbide crystals, which makes it still less likely to cause the elution of the polycrystalline silicon carbide film 12 c into the silicon melt layer.
  • the polycrystalline silicon carbide film 11 c is preferably smaller than the polycrystalline silicon carbide film 12 c in terms of proportion of (111) crystal planes having an orientation angle of 67.5° or more in the (111) crystal planes observed by X-ray diffraction. In this case, the rate of epitaxial growth of the monocrystalline silicon carbide can be still more effectively increased.
  • the reason for this can be that the polycrystalline silicon carbide film 11 c becomes higher than the polycrystalline silicon carbide film 12 c in terms of degree of exposure of crystal planes having lower stability than the (111) crystal plane in the crystals whose (111) crystal planes are exposed, which makes it possible to increase the difference in elutability into the silicon melt layer 13 between the seed material 12 and the feed material 11 .
  • the proportion of (111) crystal planes having an orientation angle of 67.5° or more in the (111) crystal planes observed by X-ray diffraction of the polycrystalline silicon carbide film 11 c is more preferably less than 80%. Furthermore, the proportion of (111) crystal planes having an orientation angle of 67.5° or more in the (111) crystal planes observed by X-ray diffraction of the polycrystalline silicon carbide film 12 c is more preferably 80% or more.
  • the seed substrate 12 and the feed substrate 11 are configured so that the polycrystalline silicon carbide film 11 c forming the surface layer of the feed substrate 11 is smaller than the polycrystalline silicon carbide film 12 c forming the surface layer of the seed substrate 12 in terms of absolute amount of shift of an LO peak observed by Raman spectroscopic analysis with an excitation wavelength of 532 nm and derived from a polycrystalline silicon carbide with a 3C crystal polymorph from 972 cm ⁇ 1 . Therefore, the seed substrate 12 becomes still less likely to cause elution into the silicon melt layer 13 and the feed material 11 becomes still more likely to cause elution into the silicon melt layer 13 . As a result, the epitaxial growth film of the monocrystalline silicon carbide can be suitably formed at a higher rate of growth.
  • the seed substrate 12 and the feed substrate 11 are configured so that the polycrystalline silicon carbide film 11 c forming the surface layer of the feed substrate 11 is smaller than the polycrystalline silicon carbide film 12 c forming the surface layer of the seed substrate 12 in terms of absolute amount of shift of the LO peak from 972 cm ⁇ 1 . Therefore, the epitaxial growth of a hexagonal monocrystalline silicon carbide can more suitably progress.
  • the reason for this can be that the denseness of the surface layer of the seed substrate 12 is increased, so that a majority of the crystal planes exposed on the surface of the surface layer have a shape similar to the (0001) hexagonal crystal plane.
  • the absolute amount of shift of the LO peak from 972 cm ⁇ 1 in the feed substrate 11 is preferably less than 4 cm ⁇ 1 .
  • the absolute amount of shift of the LO peak from 972 cm ⁇ 1 in the seed substrate 12 is preferably 4 cm ⁇ 1 or more. In this case, it can be considered that the elution from the seed substrate 12 into the silicon melt layer 13 becomes still less likely to occur, which makes it possible to further increase the rate of liquid phase epitaxial growth. Moreover, the amount of shift of the LO peak from 972 cm ⁇ 1 in the seed substrate 12 is preferably 4 cm ⁇ 1 or more.
  • the full width at half-maximum of the LO peak is preferably 7 cm ⁇ 1 or more.
  • the rate of epitaxial growth of the monocrystalline silicon carbide can be still further increased.
  • the reason for this can be that larger full widths at half-maximum of the LO peak can be caused by lower degrees of crystallinity or higher impurity concentrations of the polycrystalline silicon carbide in the surface layer, which makes it more likely to cause the elution from the surface layer.
  • the full width at half-maximum of the LO peak is preferably 15 cm ⁇ 1 or less.
  • the rate of epitaxial growth of the monocrystalline silicon carbide can be still further increased.
  • the reason for this can be that smaller full widths at half-maximum of the LO peak can be caused by higher degrees of crystallinity or lower impurity concentrations of the polycrystalline silicon carbide in the surface layer of the seed substrate 12 , which makes it still less likely to cause the elution from the surface layer of the seed substrate 12 .
  • the full width at half-maximum of the LO peak in the feed substrate 11 is preferably smaller than that of the LO peak in the seed substrate 12 .
  • each of the feed substrate 11 and the seed substrate 12 is formed of a support member 11 b or 12 b and a polycrystalline silicon carbide film 11 c or 12 c .
  • the present invention is not limited to the above structure.
  • each of the feed substrate 11 and the seed substrate 12 may be formed of a polycrystalline silicon substrate containing a polycrystalline silicon carbide.
  • the silicon carbide substrate can be produced, for example, by coating a graphite base material with a polycrystalline silicon carbide by CDV and then mechanically or chemically removing graphite.
  • the silicon carbide substrate can be produced by reacting a graphite material with silicate gas to convert the graphite material into silicon carbide.
  • the silicon carbide substrate can be produced by adding a sintering aid to silicon carbide powder and sintering the silicon carbide powder at a high temperature of 1600° C. or above.
  • a graphite material (15 mm by 15 mm by 2 mm) made of high-purity isotropic graphite having a bulk density of 1.85 g/cm 3 and an ash content of 5 ppm or less was used as a base material.
  • the base material was put into a CVD reactor and a 30 ⁇ m thick polycrystalline silicon carbide coating was formed on the base material by CVD to produce Sample 1 .
  • Silicon tetrachloride and propane gas were used as source gases.
  • the deposition was performed at an ordinary pressure and 1200° C. The deposition rate was at 30 ⁇ m/h.
  • a 50 ⁇ m thick polycrystalline silicon carbide coating was formed on the surface of a graphite material in the same manner as in Production Example 1 above except that the reaction temperature was at 1400° C. and the deposition rate was at 60 ⁇ m/h, resulting in the production of Sample 2 .
  • a 50 ⁇ m thick polycrystalline silicon carbide coating was formed on the surface of a graphite material in the same manner as in Production Example 1 above except that the reaction temperature was at 1250° C., the deposition rate was at 10 ⁇ m/h, and CH 3 SiCl 3 was used instead of silicon tetrachloride, resulting in the production of Sample 3 .
  • a 50 ⁇ m thick polycrystalline silicon carbide coating was formed on the surface of a graphite material in the same manner as in Production Example 1 above except that dichlorosilane (SiH 2 Cl 2 ) and acetylene were used instead of silicon tetrachloride and propane gas, the reaction temperature was at 1300° C., and the deposition rate was at 10 ⁇ m/h, resulting in the production of Sample 4 .
  • the thickness of the polycrystalline silicon carbide coating was approximately 1 mm.
  • the surface layers of the above produced Samples 1 to 4 were subjected to X-ray diffraction.
  • the X-ray diffraction was performed using Ultima manufactured by Rigaku Corporation. The measurement results are shown in FIG. 6 .
  • the average crystallite diameters of Samples 1 to 4 were calculated based on the results of the above X-ray diffraction measurement, using the Hall's equation. In the calculation, data of diffraction peaks relating to the (111) crystal plane, the (200) crystal plane, the (220) crystal plane, and the (311) crystal plane were used. The results are shown in Table 3 below.
  • the average crystallite diameters of Samples 1 and 2 were less than 700 A, more specifically, less than 500 A and the average crystallite diameters of Samples 3 and 4 were more than 700 A, more specifically, more than 1000 A.
  • Table 4 shows the proportion of the intensity integral in a region of 67.5° and higher orientation angles ( ⁇ ) to the intensity integral in an entire region of 15° to 90° orientation angles ( ⁇ ) ((intensity integral in region of 67.5° and higher orientation angles ( ⁇ ))/(intensity integral in entire region of 15° to 90° orientation angles ( ⁇ )). Note that the ((intensity integral in region of 67.5° and higher orientation angles ( ⁇ ))/(intensity integral in entire region of 15° to 90° orientation angles ( ⁇ )) corresponds to the proportion of (111) crystal plane having an orientation angle of 67.5° or more in the (111) crystal planes observed by X-ray diffraction.
  • Samples 3 and 4 each had an absolute value of ⁇ of more than 4 cm ⁇ 1 and an FWHM of more than 7 cm ⁇ 1 .
  • Samples 1 and 2 each had an FWHM of more than 7 cm ⁇ 1 like Samples 3 and 4 , but their absolute values of ⁇ were less than 4 cm ⁇ 1 .
  • FIGS. 14 and 15 The results are shown in FIGS. 14 and 15 .
  • the ordinate represents the rate of growth of each monocrystalline silicon carbide epitaxial growth film 20 and the abscissa represents the reciprocal (1/L) of the thickness (L) of the silicon melt layer 13 .
  • Seed substrate a silicon carbide substrate with a 4H crystal polymorph
  • a hexagonal monocrystalline silicon carbide epitaxial growth film can be obtained by using as the feed substrate 11 Sample 1 or 2 in which upon X-ray diffraction of the surface layer of the feed substrate 11 not only a diffraction peak corresponding to the (111) crystal plane but also diffraction peaks other than the diffraction peak corresponding to the (111) crystal plane are observed as diffraction peaks corresponding to a crystal polymorph of polycrystalline 3C—SiC and using as the seed substrate 12 Sample 3 in which upon X-ray diffraction of the surface layer of the seed substrate 12 a first-order diffraction peak corresponding to the (111) crystal plane is observed as a first-order diffraction peak corresponding to a crystal polymorph of polycrystalline 3C—SiC but no other first-order diffraction peak having a diffraction intensity of 10% or more of the diffraction intensity of the first-order diffraction peak corresponding to the (111) crystal plane is observed.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
US13/995,715 2010-12-24 2011-06-29 Unit for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide Expired - Fee Related US9252206B2 (en)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP2010-288469 2010-12-24
JP2010-288475 2010-12-24
JP2010288469A JP5707612B2 (ja) 2010-12-24 2010-12-24 単結晶炭化ケイ素液相エピタキシャル成長用ユニット及び単結晶炭化ケイ素の液相エピタキシャル成長方法
JP2010288475A JP5707613B2 (ja) 2010-12-24 2010-12-24 単結晶炭化ケイ素液相エピタキシャル成長用ユニット及び単結晶炭化ケイ素の液相エピタキシャル成長方法
JP2010288472A JP5644004B2 (ja) 2010-12-24 2010-12-24 単結晶炭化ケイ素液相エピタキシャル成長用ユニット及び単結晶炭化ケイ素の液相エピタキシャル成長方法
JP2010288479A JP5707614B2 (ja) 2010-12-24 2010-12-24 単結晶炭化ケイ素液相エピタキシャル成長用ユニット及び単結晶炭化ケイ素の液相エピタキシャル成長方法
JP2010-288472 2010-12-24
JP2010-288479 2010-12-24
PCT/JP2011/064875 WO2012086237A1 (fr) 2010-12-24 2011-06-29 Unité pour croissance épitaxiale en phase liquide du carbure de silicium monocristallin, et procédé de croissance épitaxiale en phase liquide du carbure de silicium monocristallin

Publications (2)

Publication Number Publication Date
US20130285060A1 US20130285060A1 (en) 2013-10-31
US9252206B2 true US9252206B2 (en) 2016-02-02

Family

ID=46313524

Family Applications (1)

Application Number Title Priority Date Filing Date
US13/995,715 Expired - Fee Related US9252206B2 (en) 2010-12-24 2011-06-29 Unit for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide

Country Status (6)

Country Link
US (1) US9252206B2 (fr)
EP (1) EP2657374A4 (fr)
KR (1) KR101740094B1 (fr)
CN (1) CN103282557B (fr)
TW (1) TWI525662B (fr)
WO (1) WO2012086237A1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103270201B (zh) * 2010-12-24 2016-02-10 东洋炭素株式会社 单晶碳化硅液相外延生长用种晶件和单晶碳化硅的液相外延生长方法
EP3399076B1 (fr) * 2015-12-28 2022-05-11 Showa Denko K.K. Procédé de nettoyage de four de croissance de monocristaux de carbure de silicium
KR102109292B1 (ko) * 2016-04-05 2020-05-11 가부시키가이샤 사이콕스 다결정 ＳｉＣ 기판 및 그 제조방법
KR101866869B1 (ko) * 2016-08-18 2018-06-14 주식회사 티씨케이 SiC 소재 및 SiC 복합 소재
CN111788339B (zh) * 2018-03-01 2022-08-09 住友电气工业株式会社 碳化硅基板

Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55144499A (en) 1979-04-26 1980-11-11 Sharp Corp Producing silicon carbide crystal layer
JPS55149195A (en) 1979-05-07 1980-11-20 Sharp Corp Manufacture of silicon carbide substrate
JPH0455397A (ja) 1990-06-20 1992-02-24 Mitsui Eng & Shipbuild Co Ltd α―ＳｉＣ単結晶の製造方法
JPH1112096A (ja) 1997-06-19 1999-01-19 Denso Corp 炭化珪素単結晶の製造方法
US5879450A (en) 1997-08-13 1999-03-09 City University Of Hong Kong Method of heteroepitaxial growth of beta silicon carbide on silicon
EP0967304A1 (fr) 1998-05-29 1999-12-29 Kabushiki Kaisha Toyota Chuo Kenkyusho Procédé pour la préparation d'un monocristal de carbure de silicium
JP2000044398A (ja) 1998-05-29 2000-02-15 Toyota Central Res & Dev Lab Inc 炭化珪素単結晶の製造方法及びそれによって得られた炭化珪素単結晶
JP2000160343A (ja) 1998-08-27 2000-06-13 Toyo Tanso Kk 耐食性ＣＶＤ―ＳｉＣ及び耐食性ＣＶＤ―ＳｉＣ被覆材
US6110279A (en) * 1996-03-29 2000-08-29 Denso Corporation Method of producing single-crystal silicon carbide
JP2001107239A (ja) 1999-08-02 2001-04-17 Tokyo Electron Ltd 耐食性に優れたＣＶＤ−ＳｉＣおよびそれを用いた耐食性部材、ならびに処理装置
WO2002099169A1 (fr) 2001-06-04 2002-12-12 The New Industry Research Organization Carbure de silicium monocristal et son procede de production
JP2005097040A (ja) 2003-09-25 2005-04-14 New Industry Research Organization 単結晶炭化ケイ素基板の表面改良方法及びその改良された単結晶炭化ケイ素基板、並びに、単結晶炭化ケイ素成長方法
TWI232891B (en) 1999-08-02 2005-05-21 Tokyo Electron Ltd SiC material, semiconductor device fabricating system and SiC material forming method
JP2008016691A (ja) 2006-07-07 2008-01-24 Kwansei Gakuin 単結晶炭化ケイ素基板の表面改質方法、単結晶炭化ケイ素薄膜の形成方法、イオン注入アニール方法及び単結晶炭化ケイ素基板、単結晶炭化ケイ素半導体基板
JP2008037684A (ja) 2006-08-03 2008-02-21 Kwansei Gakuin 単結晶炭化ケイ素種結晶の液相生成方法及び単結晶炭化ケイ素種結晶、単結晶炭化ケイ素種結晶板の液相エピタキシャル生成方法及び単結晶炭化ケイ素種結晶板、単結晶炭化ケイ素種結晶基板の生成方法及び単結晶炭化ケイ素種結晶基板
JP2008230946A (ja) 2007-03-23 2008-10-02 Kwansei Gakuin 単結晶炭化ケイ素の液相エピタキシャル成長方法、単結晶炭化ケイ素基板の製造方法、及び単結晶炭化ケイ素基板
JP2010228937A (ja) 2009-03-26 2010-10-14 Mitsui Eng & Shipbuild Co Ltd 単結晶炭化ケイ素製造原料

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3764157B2 (ja) 2003-10-10 2006-04-05 東洋炭素株式会社 高純度炭素系材料及びセラミックス膜被覆高純度炭素系材料

Patent Citations (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55144499A (en) 1979-04-26 1980-11-11 Sharp Corp Producing silicon carbide crystal layer
JPS55149195A (en) 1979-05-07 1980-11-20 Sharp Corp Manufacture of silicon carbide substrate
JPH0455397A (ja) 1990-06-20 1992-02-24 Mitsui Eng & Shipbuild Co Ltd α―ＳｉＣ単結晶の製造方法
US6110279A (en) * 1996-03-29 2000-08-29 Denso Corporation Method of producing single-crystal silicon carbide
JPH1112096A (ja) 1997-06-19 1999-01-19 Denso Corp 炭化珪素単結晶の製造方法
US5879450A (en) 1997-08-13 1999-03-09 City University Of Hong Kong Method of heteroepitaxial growth of beta silicon carbide on silicon
US6214108B1 (en) 1998-05-19 2001-04-10 Kabushiki Kaisha Toyota Chuo Kenkyusho Method of manufacturing silicon carbide single crystal and silicon carbide single crystal manufactured by the same
EP0967304A1 (fr) 1998-05-29 1999-12-29 Kabushiki Kaisha Toyota Chuo Kenkyusho Procédé pour la préparation d'un monocristal de carbure de silicium
JP2000044398A (ja) 1998-05-29 2000-02-15 Toyota Central Res & Dev Lab Inc 炭化珪素単結晶の製造方法及びそれによって得られた炭化珪素単結晶
JP2000160343A (ja) 1998-08-27 2000-06-13 Toyo Tanso Kk 耐食性ＣＶＤ―ＳｉＣ及び耐食性ＣＶＤ―ＳｉＣ被覆材
JP2001107239A (ja) 1999-08-02 2001-04-17 Tokyo Electron Ltd 耐食性に優れたＣＶＤ−ＳｉＣおよびそれを用いた耐食性部材、ならびに処理装置
TWI232891B (en) 1999-08-02 2005-05-21 Tokyo Electron Ltd SiC material, semiconductor device fabricating system and SiC material forming method
US6936102B1 (en) 1999-08-02 2005-08-30 Tokyo Electron Limited SiC material, semiconductor processing equipment and method of preparing SiC material therefor
US20060011131A1 (en) * 1999-08-02 2006-01-19 Hayashi Otsuki SiC material, semiconductor device fabricating system and SiC material forming method
WO2002099169A1 (fr) 2001-06-04 2002-12-12 The New Industry Research Organization Carbure de silicium monocristal et son procede de production
EP1403404A1 (fr) 2001-06-04 2004-03-31 The New Industry Research Organization Carbure de silicium monocristal et son procede de production
US20040237879A1 (en) 2001-06-04 2004-12-02 Tadaaki Kaneko Single crystal silicon carbide and method for producing the same
US20090038538A1 (en) 2001-06-04 2009-02-12 The New Industry Research Organization Method for producing single crystal silicon carbide
JP2005097040A (ja) 2003-09-25 2005-04-14 New Industry Research Organization 単結晶炭化ケイ素基板の表面改良方法及びその改良された単結晶炭化ケイ素基板、並びに、単結晶炭化ケイ素成長方法
JP2008016691A (ja) 2006-07-07 2008-01-24 Kwansei Gakuin 単結晶炭化ケイ素基板の表面改質方法、単結晶炭化ケイ素薄膜の形成方法、イオン注入アニール方法及び単結晶炭化ケイ素基板、単結晶炭化ケイ素半導体基板
JP2008037684A (ja) 2006-08-03 2008-02-21 Kwansei Gakuin 単結晶炭化ケイ素種結晶の液相生成方法及び単結晶炭化ケイ素種結晶、単結晶炭化ケイ素種結晶板の液相エピタキシャル生成方法及び単結晶炭化ケイ素種結晶板、単結晶炭化ケイ素種結晶基板の生成方法及び単結晶炭化ケイ素種結晶基板
JP2008230946A (ja) 2007-03-23 2008-10-02 Kwansei Gakuin 単結晶炭化ケイ素の液相エピタキシャル成長方法、単結晶炭化ケイ素基板の製造方法、及び単結晶炭化ケイ素基板
JP2010228937A (ja) 2009-03-26 2010-10-14 Mitsui Eng & Shipbuild Co Ltd 単結晶炭化ケイ素製造原料

Non-Patent Citations (17)

* Cited by examiner, † Cited by third party
Title
Chichignoud et al., "High Temperature Processing of poly-SiC Substrates from the Vapor Phase for Wafer-Bonding," Surface & Coatings Technology, vol. 201, No. 7, Dec. 20, 2006, pp. 4014-4020.
English translation of Official Communication issued in corresponding International Application PCT/JP2011/064875, mailed on Jul. 11, 2013.
George et al (George) "Bias enhanced deposition of highly oriented beta-SiC thin films using low pressure hot filament chemical vapour deposition technique", Thin Solid Films 419 (2002) p. 114-117. *
George et al (George) "Bias enhanced deposition of highly oriented β-SiC thin films using low pressure hot filament chemical vapour deposition technique", Thin Solid Films 419 (2002) p. 114-117. *
George et al., "Bias Enchanced Deposition of Highly Oriented beta-Sic Thin Films Using Low Pressure Hot Filament Chemical Vapour Deposition Technique," Thin Solid Films, vol. 419, No. 1-2, Nov. 1, 2002, pp. 114-117.
George et al., "Bias Enchanced Deposition of Highly Oriented β-Sic Thin Films Using Low Pressure Hot Filament Chemical Vapour Deposition Technique," Thin Solid Films, vol. 419, No. 1-2, Nov. 1, 2002, pp. 114-117.
Hernández et al., "Study of Surface Defects on 3C-SiC Films Grown on Si(111) by CVD," Journal of Crystal Growth, vol. 253, No. 1-4, Jun. 1, 2003, pp. 95-101.
Nishitani et al., "Metastable solvent epitaxy of SiC", Journal of Crystal Growth, vol. 310, 2008, pp. 1815-1818.
Nishitani, S. et al., "Simulations on Metastable Solvent Epitaxy of SiC", Proceedings of the Conference on Computational Engineering and Science, vol. 12, May 2007, 4 pages.
Official Communication issued in corresponding European Patent Application No. 11850694.8, mailed on Apr. 3, 2014.
Official Communication issued in corresponding Taiwanese Patent Application No. 100125569, mailed on Aug. 11, 2015.
Official Communication issued in International Patent Application No. PCT/JP2011/064875, mailed on Aug. 16, 2011.
Ohmukai et al., "Characteristics of Amorphous Silicon Precipitated by Means of Argon Excimer Laser Irradiation on SiC Films," Journal of Non-Crystalline Solids, vol. 202, No. 1-2, Jul. 1, 1996, pp. 77-80.
Rimai et al., "Preparation of Oriented Silicon Carbide Films by Laser Ablation of Ceramic Silicon Carbide Targets," Applied Physics Letters, vol. 59, No. 18, Oct. 28, 1991, pp. 2266-2268.
Steckl et al., "Characterization of 3C-SiC crystals grown by thermal decomposition of methyltrichlorosilane", Applied Physics Letters, vol. 69, No. 25, Dec. 16, 1996, pp. 3824-3826.
Wang et al (Wang). "Microstructural analysis of single crystal SiC prepared by novel liquid phase epitaxy" Ceramics International 37 (2011) 3671-3676 pag. *
Zheng et al., "Controlled-Growth and Characterization of 3C-SiC and 6H-SiC Films on C-plane Sapphire Substrates by LPCVD," Journal of Alloys and Compounds, vol. 426, No. 1-2, Dec. 21, 2006, pp. 290-294.

Also Published As

Publication number Publication date
KR20130141612A (ko) 2013-12-26
EP2657374A1 (fr) 2013-10-30
CN103282557A (zh) 2013-09-04
KR101740094B1 (ko) 2017-05-25
TW201237935A (en) 2012-09-16
US20130285060A1 (en) 2013-10-31
EP2657374A4 (fr) 2014-05-07
WO2012086237A1 (fr) 2012-06-28
TWI525662B (zh) 2016-03-11
CN103282557B (zh) 2017-02-15

Similar Documents

Publication Publication Date Title
US10358741B2 (en) Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide
US9725822B2 (en) Method for epitaxial growth of monocrystalline silicon carbide using a feed material including a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph
US9252206B2 (en) Unit for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide
US9447517B2 (en) Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon
JP5724122B2 (ja) 単結晶炭化ケイ素エピタキシャル成長用フィード材及び単結晶炭化ケイ素のエピタキシャル成長方法
JP5724123B2 (ja) 単結晶炭化ケイ素エピタキシャル成長用フィード材及び単結晶炭化ケイ素のエピタキシャル成長方法
JP5793814B2 (ja) 単結晶炭化ケイ素液相エピタキシャル成長用シード材及び単結晶炭化ケイ素の液相エピタキシャル成長方法
JP5793815B2 (ja) 単結晶炭化ケイ素液相エピタキシャル成長用シード材及び単結晶炭化ケイ素の液相エピタキシャル成長方法
JP5707613B2 (ja) 単結晶炭化ケイ素液相エピタキシャル成長用ユニット及び単結晶炭化ケイ素の液相エピタキシャル成長方法
JP5644004B2 (ja) 単結晶炭化ケイ素液相エピタキシャル成長用ユニット及び単結晶炭化ケイ素の液相エピタキシャル成長方法
JP5707614B2 (ja) 単結晶炭化ケイ素液相エピタキシャル成長用ユニット及び単結晶炭化ケイ素の液相エピタキシャル成長方法
JP5724121B2 (ja) 単結晶炭化ケイ素エピタキシャル成長用フィード材及び単結晶炭化ケイ素のエピタキシャル成長方法
JP5707612B2 (ja) 単結晶炭化ケイ素液相エピタキシャル成長用ユニット及び単結晶炭化ケイ素の液相エピタキシャル成長方法
JP5793813B2 (ja) 単結晶炭化ケイ素液相エピタキシャル成長用シード材及び単結晶炭化ケイ素の液相エピタキシャル成長方法

Legal Events

Date Code Title Description
AS Assignment

Owner name: TOYO TANSO CO., LTD., JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:TORIMI, SATOSHI;NOGAMI, SATORU;MATSUMOTO, TSUYOSHI;SIGNING DATES FROM 20130501 TO 20130506;REEL/FRAME:030644/0524

ZAAA Notice of allowance and fees due

Free format text: ORIGINAL CODE: NOA

ZAAB Notice of allowance mailed

Free format text: ORIGINAL CODE: MN/=.

STCF Information on status: patent grant

Free format text: PATENTED CASE

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1551); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Year of fee payment: 4

FEPP Fee payment procedure

Free format text: MAINTENANCE FEE REMINDER MAILED (ORIGINAL EVENT CODE: REM.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

LAPS Lapse for failure to pay maintenance fees

Free format text: PATENT EXPIRED FOR FAILURE TO PAY MAINTENANCE FEES (ORIGINAL EVENT CODE: EXP.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

STCH Information on status: patent discontinuation

Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362

FP Lapsed due to failure to pay maintenance fee

Effective date: 20240202