US9050697B2 - Self-conditioning polishing pad and a method of making the same - Google Patents

Self-conditioning polishing pad and a method of making the same Download PDF

Info

Publication number
US9050697B2
US9050697B2 US13/797,121 US201313797121A US9050697B2 US 9050697 B2 US9050697 B2 US 9050697B2 US 201313797121 A US201313797121 A US 201313797121A US 9050697 B2 US9050697 B2 US 9050697B2
Authority
US
United States
Prior art keywords
insoluble polymeric
polymeric foam
particles
polishing pad
coated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active, expires
Application number
US13/797,121
Other languages
English (en)
Other versions
US20130252519A1 (en
Inventor
Scott B. Daskiewich
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JH Rhodes Co Inc
Original Assignee
JH Rhodes Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JH Rhodes Co Inc filed Critical JH Rhodes Co Inc
Priority to US13/797,121 priority Critical patent/US9050697B2/en
Assigned to JH RHODES COMPANY, INC. reassignment JH RHODES COMPANY, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: DASKIEWICH, SCOTT B.
Publication of US20130252519A1 publication Critical patent/US20130252519A1/en
Application granted granted Critical
Publication of US9050697B2 publication Critical patent/US9050697B2/en
Active legal-status Critical Current
Adjusted expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J9/00—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof
    • C08J9/35—Composite foams, i.e. continuous macromolecular foams containing discontinuous cellular particles or fragments
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2203/00—Foams characterized by the expanding agent
    • C08J2203/10—Water or water-releasing compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2203/00—Foams characterized by the expanding agent
    • C08J2203/14—Saturated hydrocarbons, e.g. butane; Unspecified hydrocarbons
    • C08J2203/142—Halogenated saturated hydrocarbons, e.g. H3C-CF3

Definitions

  • the present invention is generally related to a self-conditioning polishing pad, comprising an insoluble polymeric foam matrix containing insoluble polymeric foam particles coated with a water-soluble component.
  • a conditioning tool can comprise a metal puck that is impregnated on one side with diamond powder or another similarly hard abrasive material.
  • a polishing pad will experience a decline in performance (i.e., Stock removal, part flatness, part defects, and/or surface roughness) that is related to the flattening of the polyurethane nap, changes in the pad topography, and dogging of pores with slurry and swarf.
  • a decline in performance i.e., Stock removal, part flatness, part defects, and/or surface roughness
  • Polishing pads are useful in many applications. Two such applications are polishing glass and polishing wafers. Regardless of the application, a polishing pad is moved relative to the object (e.g., glass, Si wafer, Sapphire wafer, etc.) being polished. This relative movement may be created by rotating the polishing pad, by rotating the object being polished, or a combination of such movements. Other linear or any useful relative motion may be used between the polishing pad and the object being polished. In some embodiments, a force may be applied to press the polishing pad in contact with the wafer.
  • the object e.g., glass, Si wafer, Sapphire wafer, etc.
  • a force may be applied to press the polishing pad in contact with the wafer.
  • the polishing may be performed to varying degrees such as to remove larger imperfections, to achieve a mirror finish and/or final flatness, etc.
  • the process of polishing silicon semiconductor substrate wafers to improve flatness is accomplished by a mechanochemical process in which one or more polishing pads, typically made of urethane, is used with an alkaline polishing solution (slurry), commonly comprising fine abrasive particles such as silica or cerium.
  • slurry alkaline polishing solution
  • the silicon wafer is supported between a platen covered with a polishing pad and a carrier to which the wafer is attached, or, in the case of double-sided polishing, the wafer is held between two platens, each covered with a polishing pad.
  • the pads are typically about 1 mm thick and pressure is applied to the wafer surface.
  • the wafer is mechanochemically polished by relative movement between the platen and the wafer.
  • polishing tools During polishing, pressure is applied to the wafer surfaces by pressing the pad and the wafer together in a polishing tool, whereby a uniform pressure is generated over the entire surface owing to the compressive deformation of pads. Polishing tools often have dynamic heads which can be rotated at different rates and at varying axes of rotation. This removes material and evens out any irregular topography, making the wafer flat or planar.
  • polishing pads tend to need to be conditioned and therefore replaced frequently because conditioning removes a portion of the pad thickness. For example, such polishing pads may need to be replaced every 5-10 days. It is desirable to have a polishing pad that can maintain its optimal polishing performance longer before conditioning is necessary, thereby giving the polishing pad a longer polishing life. In this manner, more polishing can be performed and thus more product can be made in a set period of time. In this regard, it is desirable to have a polishing pad that is self conditioning.
  • the present invention is directed to a self-conditioning polishing pad.
  • the self-conditioning polishing pad comprises an insoluble polymeric foam matrix and insoluble polymeric foam particles within the foam matrix.
  • the particles are coated with a water-soluble component over a portion of the surface area of the particle.
  • the particles may have a diameter in the range of 5 to 1000 microns in diameter.
  • FIG. 1 illustrates a cross section of a self conditioning polishing pad in accordance with one exemplary embodiment of the present invention
  • FIG. 2 illustrates a self conditioning polishing pad, the part to be polished, and a polishing tool, all in accordance with one exemplary embodiment of the present invention
  • FIG. 3 illustrates an exemplary method flow chart for manufacturing an exemplary self conditioning pad in accordance with one exemplary embodiment of the present invention.
  • a polishing pad for use in polishing glass, silicon semiconductor substrate wafers, and Sapphire wafers (among other things).
  • the polishing pad is chemically and/or physically configured to comprise particles formed in the pad in such a manner that the pad is a self-conditioning pad.
  • the pad can be configured to self condition so as to effectively function for longer periods of time without interruption of operation for conditioning relative to pads that are not so configured.
  • a polishing pad may comprise a foam matrix and foam particles within the foam matrix.
  • the polishing pad comprises an insoluble polymeric foam matrix and insoluble polymeric foam particles within the insoluble polymeric foam matrix.
  • the insoluble polymeric foam particles may be coated over a portion of the particles' surface area with a water soluble component.
  • a polishing pad 100 comprises an insoluble polymeric foam matrix 110 and insoluble polymeric foam particles 120 within insoluble polymeric foam matrix 110 .
  • the insoluble polymeric foam particles 120 may be coated over a portion of the particles' surface area with a water-soluble coating 125 .
  • the insoluble polymeric foam particles 120 are coated over a portion comprising about 5 to 90% of the particles' surface area with a water-soluble component 125 .
  • Insoluble polymeric foam particle 120 and water-soluble coating 125 together form a coated particle 130 .
  • the insoluble foam matrix 110 further comprises a pore 170 .
  • a pore 170 comprises a cell opening 140 .
  • a coated particle 130 may further comprise a pore 180 .
  • insoluble polymeric foam particles 120 are formed by first making a larger insoluble polymeric foam object and then creating smaller particles out of the larger foam object.
  • the smaller particles can be formed out of the larger foam object through any suitable method.
  • the larger foam object is ground into smaller particles.
  • the insoluble foam particles may be formed by cryogenically grinding the larger foam object.
  • particles may be formed in a hammer mill.
  • any other suitable method for forming particles may be used.
  • the insoluble polymeric foam particles have a diameter between about 5 and 500 microns.
  • the insoluble polymeric foam particles comprise at least one of: a surfactant, an etchant, pH buffer, an acid, and a base.
  • the insoluble polymeric foam particles have a bulk density of about 0.2 to 0.85 g/cm ⁇ 3.
  • particles 120 are coated with a soluble coating.
  • particles 120 are coated through use of a spray coating or other suitable technology such as a cyclonic powder coater.
  • particles 120 are formed by making slurry of insoluble particles contained in a soluble liquid phase then drying and finally cryogrinding or hammer milling the solidified insoluble particle/soluble composite into particles.
  • particles 120 are dried and clarified after the spray coating.
  • a coated particle 130 comprises a particle 120 that is coated with a soluble coating 125 .
  • the insoluble polymeric foam particles are coated over about 5% to 90% of the surface area of said insoluble polymeric foam particles.
  • Coating of 5% to 90% of the insoluble foam particles can be accomplished, for example, by calculating the surface area of the particles and then proportionally blending the appropriate amount of water soluble polymer, in an exemplary embodiment, the coated particles comprise about 10% to 90% by volume of the polishing pad.
  • the soluble coating is comprised of organic or inorganic water-soluble particles.
  • organic water-soluble particles include particles of saccharides (polysaccharides, e.g., a, (3 or y-cyclodextrin, dextrin and starch, lactose, mannite, and the like), celluloses (hydroxypropyl cellulose, methylcellulose, and the like), proteins, a polyvinyl alcohol, a polyvinyl pyrrolidone, a polyacrylic acid, a polyacrylate, a polyethylene oxide, water-soluble photosensitive resins, a sulfonated polyisoprene, and a sulfonated polyisoprene copolymer.
  • saccharides polysaccharides, e.g., a, (3 or y-cyclodextrin, dextrin and starch, lactose, mannite, and the like
  • celluloses hydroxypropyl cellulose, methylcellulose, and the like
  • proteins a polyvinyl alcohol, a polyvinyl pyr
  • coated particles 130 are added into the mix during the process of forming matrix 110 of polishing pad 100 .
  • coated particles 130 will be set within matrix 110 .
  • coated particles 130 are mixed into the matrix using high-shear blending.
  • Other mixing methods include double planetary, kneading swing arm, and inline mixing with direct filler feed.
  • any method of mixing may be used that is configured to randomly space out coated particles 130 within matrix 110 .
  • the mixing process may entrain air bubbles within the foam (whether it be within the foam particles when forming them, or whether it may be within matrix 110 ).
  • any suitable method for introducing pores 140 within matrix 110 or for introducing pores 180 within particles 120 may be used. These methods may include ambient air frothing, water blown-CO 2 evolution, physical blowing agents such as HFC, decompositional blowing agents such as azonitriles, microspheres, and injected inert gasses.
  • the insoluble foam object (that is to become the insoluble foam particles) is formed by mixing a polyurethane prepolymer, a curing agent, a surfactant, and a foaming agent.
  • an abrasive filler may also be mixed with the other ingredients.
  • the insoluble foam object can be polyurethane foam, epoxy foam, polyethylene foam, polybutadiene foam, ionomer foam, or any other insoluble polymer foam.
  • the insoluble foam object may then be ground down into smaller insoluble foam particles 120 . These particles 120 may then be coated to form insoluble coated foam particles 130 . The coated particles 130 may then be included in the formation of the overall pad 100 .
  • polishing pad 100 is then formed by mixing a prepolymer, a curing agent, a surfactant, a foaming agent, and coated particles 130 .
  • an abrasive filler may also be mixed with the other ingredients.
  • the insoluble foam matrix can be polyurethane foam, epoxy foam, polyethylene foam, polybutadiene foam, ionomer foam, or any other insoluble polymer foam.
  • the components may be mixed together using high-shear blending to incorporate the coated particles into the matrix.
  • a foam bun may be formed in an open mold. The foam bun may be cured and then sliced into sheets. Each sheet comprises one polishing pad 100 .
  • the pad comprises open cells 140 .
  • the open cell content of the insoluble polymeric foam particle may be about 5% to about 75%.
  • the soluble component coating the insoluble foam particle may be between 50% and 100% soluble.
  • the insoluble polymeric foam matrix has a bulk density of 0.2 to 0.85 g/cm ⁇ 3.
  • the foam bun may have an aggregate bulk density of 0.2 to 0.85 g/cm ⁇ 3.
  • Matrix 110 and particle 120 are both made of an insoluble foam material.
  • the materials for matrix 110 and particle 120 are identical to each other.
  • scrap material that is a byproduct of the production process can be used to create additional particles.
  • the materials are different from each other.
  • the matrix and particle materials may be selected from any of a number of possible materials.
  • the insoluble foam material for either of matrix 110 and/or particle 120 may be made from a polymer foam.
  • the polymer foam may be polyurethane, polyethylene, polystyrene, polyvinyl chloride, acryl foam or a mixture thereof.
  • These polymer foams may be produced by mixing a polymerizing agent, for example, an isocyanate-terminated monomer, and a prepolymer, for example an isocyanate functional polyol or a polyol-diol mixture.
  • classes of polymerizing agents or isocyanate-terminated monomers, that may be used to prepare the particulate crosslinked polyurethane include, but are not limited to, aliphatic polyisocyanates; ethylenically unsaturated polyisocyanates; alicyclic polyisocyanates; aromatic polyisocyanates wherein the isocyanate groups are not bonded directly to the aromatic ring, e.g., xylene diisocyanate; aromatic polyisocyanates wherein the isocyanate groups are bonded directly to the aromatic ring, e.g., benzene diisocyanate; halogenated, alkylated, alkoxylated, nitrated, carbodiimide modified, urea modified and biuret modified derivatives of polyisocyanates belonging to these classes; and dimerized and trimerized products of polyisocyanates belonging to these classes.
  • aliphatic polyisocyanates from which the isocyanate functional reactant may be selected include, but are not limited to, ethylene diisocyanate, trimethylene diisocyanate, tetramethylene diisocyanate, hexamethylene diisocyanate (HDI), octamethylene diisocyanate, nonamethylene diisocyanate, dimethylpentane diisocyanate, trimethyl hexane diisocyanate, decamethylene diisocyanate, trimethyl hexamethylene diisocyanate, undecanetriisocyanate, hexamethylene triisocyanate, diisocyanato-(isocyanatomethyl)octane, trimethyl-diisocyanato (isocyanatomethyl)octane, bis(isocyanatoethyl)carbonate, bis(isocyanatoethyl)ether, isocyanatopropyl-diisocyanatohexan
  • ethylenically unsaturated polyisocyanates from which the isocyanate functional reactant may be selected include, but are not limited to, butene diisocyanate and butadiene diisocyanate.
  • Alicyclic polyisocyanates from which the isocyanate functional reactant may be selected include, but are not limited to, isophorone diisocyanate (IPDI), cyclohexane diisocyanate, methylcyclohexane diisocyanate, bis(isocyanatomethyl)cyclohexane, bis(isocyanatocyclohexyl)methane, bis(isocyanatocyclohexyl)propane, bis(isocyanatocyclohexyl)ethane, and isocyanatomethyl-(isocyanatopropyl)-isocyanatomethyl bicycloheptane.
  • IPDI isophorone diisocyanate
  • aromatic polyisocyanates wherein the isocyanate groups are not bonded directly to the aromatic ring from which the isocyanate functional reactant may be selected include, but are not limited to, bis(isocyanatoethyl)benzene, tetramethylxylene diisocyanate, bis(isocyanato-methylethyl)benzene, bis(isocyanatobutyl)benzene, bis(isocyanatomethyl)naphthalene, bis(isocyanatomethyl)diphenyl ether, bis(isocyanatoethyl)phthalate, mesitylene triisocyanate and di(isocyanatomethyl)furan.
  • Aromatic polyisocyanates having isocyanate groups bonded directly to the aromatic ring, from which the isocyanate functional reactant may be selected include, but are not limited to, phenylene diisocyanate, ethylphenylene diisocyanate, isopropylphenyl diisocyanate, dimethylphenylene diisocyanate, diethylphenylene diisocyanate, diisopropylbenzene diisocyanate, trimethylbenzene triisocyanate, benzene triisocyanate, naphthalene diisocyanate, methylnaphthalene diisocyanate, biphenyl diisocyanate, ortho-tolidine diisocyanate, diphenylmethane diisocyanate, bis(methyl-isocyanatophenyl)methane, bis(isocyanatophenyl)ethylene, dimethoxy-bipheny-diisocyanate, triphenylmethane
  • polyisocyanate monomers having two isocyanate groups include, xylene diisocyanate, tetramethylxylene diisocyanate, isophorone diisocyanate, bis(isocyanatocyclohexyl)methane, toluene diisocyanate (TDI), diphenylmethane diisocyanate (MDI), and mixtures thereof.
  • isocyanate functional polyols include, but are not limited to, polyether polyols, polycarbonate polyols, polyester polyols and polycaprolactone polyols.
  • commercial prepolymers may be used, for example Adiprene® L213 a TDI, terminated polyether based (PTMEG).
  • the molecular weight of the prepolymers can vary widely, for example, having a number average molecular (Mn) of from 500 to 15,000, or from 500 to 5000, as determined by gel permeation chromatography (GPC) using polystyrene standards.
  • Mn number average molecular
  • Classes of polyols that may be used to prepare the isocyanate functional prepolymers of the first component of the exemplary two-component composition used to prepare the exemplary particulate crosslinked polyurethane include, but are not limited to: straight or branched chain alkane polyols, e.g., ethanediol, propanediol, propanediol, butanediol, butanediol, glycerol, neopentyl glycol, trimethylolethane, trimethylolpropane, di-trimethylolpropane, erythritol, pentaerythritol and di-pentaerythritol; polyalkylene glycols, e.g., di-, tri- and tetraethylene glycol, and di-, tri- and tetrapropylene glycol; cyclic alkane polyols, e.g., cyclopentane
  • Additional classes of polyols that may be used to prepare exemplary isocyanate functional polyurethane prepolymers include, for example, higher polyalkylene glycols, such as polyethylene glycols having number average molecular weights (Mn) of, for example, from 200 to 2000; and hydroxy functional polyesters, such as those formed from the reaction of dials, such as butane diol, and diacids or diesters, e.g., adipic acid or diethyl adipate, and having an Mn of, for example, from 200 to 2000.
  • higher polyalkylene glycols such as polyethylene glycols having number average molecular weights (Mn) of, for example, from 200 to 2000
  • hydroxy functional polyesters such as those formed from the reaction of dials, such as butane diol, and diacids or diesters, e.g., adipic acid or diethyl adipate, and having an Mn of, for example, from 200 to 2000
  • the isocyanate functional polyurethane prepolymer is prepared from a diisocyanate, e.g., toluene diisocyanate, and a polyalkylene glycol, e.g., poly(tetrahydrofuran) with an M n of 1000.
  • a diisocyanate e.g., toluene diisocyanate
  • a polyalkylene glycol e.g., poly(tetrahydrofuran) with an M n of 1000.
  • the isocyanate functional polyurethane prepolymer may optionally be prepared in the presence of a catalyst.
  • a catalyst include, but are not limited to, tertiary amines, such as triethylamine, and organometallic compounds, such as dibutyltin dilaurate.
  • an abrasive filler may also form part of the insoluble foam particle 120 and/or insoluble foam matrix 110 .
  • This abrasive filler may include exemplary abrading particles that include, but are not limited to, particles of, for example, cerium oxides, silicon oxides, aluminum oxides, zirconia, iron oxides, manganese dioxides, kaolin clays, montmorillonite clays, and titanium oxides. Additionally, exemplary abrading particles may include, but are not limited to, silicon carbides and diamond.
  • urethane polymers for polishing pads with a single mixing step that avoids the use of isocyanate-terminated monomers.
  • a prepolymer is mixed, for example, in an open-air container with the use of a high-shear impeller.
  • atmospheric air is entrained in the mix by the action of the impeller, which pulls air into the vortex created by the rotation.
  • the entrained gas bubbles act as nucleation sites for the foaming process.
  • a blowing agent such as water, may be added to the mix to facilitate a reaction which produces the CO 2 gas responsible for cell growth.
  • the mix may be poured into the mold during this window.
  • other optional additives may be added to the mix such as surfactants or additional blowing agents.
  • the coated particles may be added and mixed in during this liquid phase.
  • the prepolymer may be reacted with a foaming agent such as, 4,4′-methylene-bis-o-chloroaniline [MBCA or MOCA].
  • MBCA 4,4′-methylene-bis-o-chloroaniline
  • the MOCA may initiate polymerization and chain extension, causing the viscosity of the mix to increase rapidly.
  • there is a short time window after the addition of MOCA of about 1-2 minutes during which the viscosity of the mix remains low, called the “low-viscosity window.”
  • the mix may be poured into the mold during this window.
  • the window quickly after the pour, the window passes, and existing pores become effectively frozen in place. Although pore motion may essentially have ended, pore growth may continue, for example, as CO 2 continues to be produced from the polymerization reaction. In one example embodiment, the molds then oven cure to substantially complete the polymerization reaction, for example, for 6-12 hours at 115° C.
  • the molds are removed from the oven, and allowed to cool.
  • a cured mold (one formed without particles) may be broken up into particles for use in a subsequent pad forming process.
  • the cured mold may be sliced using a skiver, in one example embodiment, the slices may be made into circular pads or rectangular-shaped pads or pads of any other desired shape.
  • the slices may be made by cutting to shape with a punch or cutting tool or any other suitable instrument.
  • an adhesive may be applied to one side of the pad.
  • the pad surface may be grooved, if desired, for example, on the polishing surface in a pattern such as a cross-hatched pattern (or any other suitable pattern). In some example embodiments, at that point, the pads are generally ready for use.
  • the geometry or shape of grooves may comprise at least one of a square trough, a rounded trough, and a triangular trough.
  • numerous physical configurations of various geometries to the polishing pad surface are contemplated in this disclosure.
  • any arrangement, combination, and/or application of soluble coated insoluble foam particles within an insoluble foam matrix applicable for a single pad would work for a plurality of pads stacked on each other.
  • a stacked pad may comprise one such pad 100 as disclosed herein as well as a typical pad.
  • grooves can be created via any mechanical method capable of producing grooves in a polymer foamed polishing pad.
  • grooves can be created with a circular saw blade, a punch, a needle, a drill, a laser, an air-jet, a water jet, or any other instrument capable of rendering grooves in the pad.
  • grooves can be made simultaneously with a multiple gang-saw jig, a multiple-drill bit jig, a multiple punch jig, or a multiple needle jig.
  • the polishing pad may be chemically configured to comprise a chemical foaming agent applied to the open-air mix while in the liquid phase.
  • the chemical foaming agent comprises at least one of a hydroflourocarbon (HFC) or azeotrope of 2 or more hydrocarbon (HFCs), such as 1,1,1,3,3-pentaflourobutane (HFC-365); 1,1,1,2-tetraflouroethane (HFC-134a), methoxy-nonafluorobutane (HFE-7100) and a free radical initiator comprising an azonitrile, such as 2,4-Dimethyl, 2,2′-Azobis Pentanenitrile.
  • HFC hydroflourocarbon
  • HFCs 1,1,1,3,3-pentaflourobutane
  • HFC-134a 1,1,1,2-tetraflouroethane
  • HFE-7100 methoxy-nonafluorobutane
  • free radical initiator comprising an
  • Exemplary foaming agents include the HFCs Solkane® 365mfc and 134a (Solvay, Hannover, Germany), and free radical initiators Vazo 52 (Dupont, Wilmington, Del.).
  • HFCs Solkane® 365mfc and 134a Solvay, Hannover, Germany
  • free radical initiators Vazo 52 Vazo 52
  • the chemical configuration comprises a cell opener which promotes cell opening during the interaction of two cells in the liquid phase.
  • cell openers include, but are not limited to non-hyrdrolizable polydimethylsiloxanes, polyalkyleoxides, dimethylsiloxy, methylpolyethersiloxy, silicone copolymers, wherein in some exemplary embodiments, the silicone copolymers can be Dabco DC-3043 or Dabco DC-3042 (Air Products, Allentown, Pa.).
  • the output of a gas injector can be inserted directly into the open-air mix, causing the injection of more bubbles than would otherwise be introduced thorough the action of the impeller alone.
  • a method of forming a pad includes the step of directly introducing gas bubbles into the air-mix in the liquid phase. This step of directly introducing gas bubbles may involve the selection of the size and quantity of bubbles.
  • polishing pad 100 may be used in connection with a polishing table 220 , a slurry 230 , and a platen 240 for holding the object 210 to be polished.
  • the pad 100 may be moved relative to the object 210 being polished.
  • downward pressure may be applied to a platen 240 .
  • platen 240 may be twisted or translated or otherwise moved to facilitate polishing.
  • polishing table 220 may be twisted or translated or otherwise moved to facilitate polishing.
  • the pad 100 may self condition such that polishing may occur for a longer period of time than for a traditional polishing pad that is not so configured. In one exemplary embodiment, the polishing pad is never reconditioned.
  • the embedding of these coated particles 120 facilitates reduced conditioning or may eliminate conditioning of the pad 100 because, as the particles 120 are exposed during polishing, the water soluble coating 125 will cause those particles to gradually become detached from the surface of the pad. Stated another way, the water-soluble coating 125 surrounding exposed particles 150 may dissolve and release the exposed particles 150 from the pad. This action generates new holes in the surface and eventually exposes yet further coated particles. Such self conditioning may reduce the need to “rake” the pad, and cause the pad to last longer.
  • the insoluble polymeric foam particles are coated over about 5% to 90% of the surface area of said insoluble polymeric foam particles.
  • the partial nature of the water-soluble coating over the surface area of the insoluble polymeric foam particles allows the insoluble foam matrix to interface with insoluble portions of the foam particles, retaining the foam particle by providing a polyurethane-polyurethane bond with the pad matrix in an exemplary embodiment and retarding the release of the foam particles from the pad as the water-soluble coating surrounding exposed particles dissolves.
  • the progressive dissolving of the water-soluble coating progressively diminishes the strength of the bond between the particles and the matrix. Accordingly, if the insoluble polymeric foam particles are coated over an insufficient percentage of the surface area of said insoluble polymeric foam particles, the bond between the particles and the matrix would not sufficiently diminish over time and the release of the particles from the pad may be impeded. This may retard the generation of new holes in the surface. On the other hand, if the insoluble polymeric foam particles are coated over an excessive percentage of the surface area of said insoluble polymeric foam particles, the bond between the particles and the matrix would diminish prematurely or excessively as the water soluble coating dissolved, releasing the particle prematurely. This may diminish the life of the pad or potentially change the polishing characteristics of the pad.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
US13/797,121 2012-03-20 2013-03-12 Self-conditioning polishing pad and a method of making the same Active 2033-05-09 US9050697B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/797,121 US9050697B2 (en) 2012-03-20 2013-03-12 Self-conditioning polishing pad and a method of making the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261613398P 2012-03-20 2012-03-20
US13/797,121 US9050697B2 (en) 2012-03-20 2013-03-12 Self-conditioning polishing pad and a method of making the same

Publications (2)

Publication Number Publication Date
US20130252519A1 US20130252519A1 (en) 2013-09-26
US9050697B2 true US9050697B2 (en) 2015-06-09

Family

ID=49212255

Family Applications (1)

Application Number Title Priority Date Filing Date
US13/797,121 Active 2033-05-09 US9050697B2 (en) 2012-03-20 2013-03-12 Self-conditioning polishing pad and a method of making the same

Country Status (6)

Country Link
US (1) US9050697B2 (enExample)
JP (1) JP6078631B2 (enExample)
KR (1) KR101532896B1 (enExample)
CN (1) CN104302446B (enExample)
TW (1) TWI574782B (enExample)
WO (1) WO2013142134A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10813444B2 (en) 2018-05-16 2020-10-27 Jh Rhodes Company, Inc. Porous polymeric polishing bristles and methods for their manufacture

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9050697B2 (en) 2012-03-20 2015-06-09 Jh Rhodes Company, Inc. Self-conditioning polishing pad and a method of making the same
KR101783406B1 (ko) * 2016-12-07 2017-10-10 엠.씨.케이 (주) 연마 패드 및 이의 제조방법
US11551936B2 (en) * 2018-07-31 2023-01-10 Taiwan Semiconductor Manufacturing Co., Ltd. Self-healing polishing pad
CN112080209B (zh) * 2020-09-11 2022-04-12 宁波江丰电子材料股份有限公司 一种冷却水盘和冷却管的粘结方法
CN117999150A (zh) 2021-09-02 2024-05-07 Cmc材料有限责任公司 包含聚合物颗粒的纹理化cmp垫

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6790883B2 (en) 2000-05-31 2004-09-14 Jsr Corporation Composition for polishing pad and polishing pad using the same
US6913517B2 (en) 2002-05-23 2005-07-05 Cabot Microelectronics Corporation Microporous polishing pads
KR20050079631A (ko) 2004-02-05 2005-08-10 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 분리가능한 슬릭 입자를 가지는 연마 패드
US6992123B2 (en) 2002-11-05 2006-01-31 Jsr Corporation Polishing pad
US20060128271A1 (en) 2004-04-23 2006-06-15 Jsr Corporation Polishing pad for semiconductor wafer and laminated body for polishing of semiconductor wafer equipped with the same as well as method for polishing of semiconductor wafer
KR20090120553A (ko) 2008-05-20 2009-11-25 (주)피에스텍 연마용 폴리우레탄 흡착 패드 조성물, 연마용 폴리우레탄흡착 패드 및 그 제조방법
US20100221983A1 (en) 2009-01-05 2010-09-02 Innopad, Inc. Multi-layered chemical-mechanical planarization pad
WO2011087737A2 (en) 2009-12-22 2011-07-21 3M Innovative Properties Company Polishing pad and method of making the same
WO2012138705A2 (en) 2011-04-05 2012-10-11 Universal Photonics, Inc. A self-conditioning polishing pad and a method of making the same
WO2013142134A1 (en) 2012-03-20 2013-09-26 Jh Rhodes Company, Inc. A self-conditioning polishing pad and a method of making the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4155790B2 (ja) * 2002-10-18 2008-09-24 株式会社東芝 化学機械研磨方法及び素子微細化分離用研磨パッド
US20040224622A1 (en) * 2003-04-15 2004-11-11 Jsr Corporation Polishing pad and production method thereof
JP4897238B2 (ja) * 2005-05-17 2012-03-14 東洋ゴム工業株式会社 研磨パッド
US7169031B1 (en) * 2005-07-28 2007-01-30 3M Innovative Properties Company Self-contained conditioning abrasive article
JP4379462B2 (ja) * 2006-10-31 2009-12-09 Ｊｓｒ株式会社 研磨パッド用組成物及びこれを用いた研磨パッド
US8491360B2 (en) * 2007-10-26 2013-07-23 Innopad, Inc. Three-dimensional network in CMP pad
KR101352235B1 (ko) * 2009-05-27 2014-01-15 로저스코포레이션 연마 패드, 이를 위한 폴리우레탄층, 및 규소 웨이퍼의 연마 방법

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6790883B2 (en) 2000-05-31 2004-09-14 Jsr Corporation Composition for polishing pad and polishing pad using the same
US20040244299A1 (en) 2000-05-31 2004-12-09 Jsr Corporation Composition for polishing pad and polishing pad using the same
US6913517B2 (en) 2002-05-23 2005-07-05 Cabot Microelectronics Corporation Microporous polishing pads
US6992123B2 (en) 2002-11-05 2006-01-31 Jsr Corporation Polishing pad
KR20050079631A (ko) 2004-02-05 2005-08-10 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 분리가능한 슬릭 입자를 가지는 연마 패드
US20060128271A1 (en) 2004-04-23 2006-06-15 Jsr Corporation Polishing pad for semiconductor wafer and laminated body for polishing of semiconductor wafer equipped with the same as well as method for polishing of semiconductor wafer
KR20090120553A (ko) 2008-05-20 2009-11-25 (주)피에스텍 연마용 폴리우레탄 흡착 패드 조성물, 연마용 폴리우레탄흡착 패드 및 그 제조방법
US20100221983A1 (en) 2009-01-05 2010-09-02 Innopad, Inc. Multi-layered chemical-mechanical planarization pad
WO2011087737A2 (en) 2009-12-22 2011-07-21 3M Innovative Properties Company Polishing pad and method of making the same
WO2012138705A2 (en) 2011-04-05 2012-10-11 Universal Photonics, Inc. A self-conditioning polishing pad and a method of making the same
WO2013142134A1 (en) 2012-03-20 2013-09-26 Jh Rhodes Company, Inc. A self-conditioning polishing pad and a method of making the same

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
International Preliminary Report on Patentability in Application No. PCT/US2012/032089 dated Oct. 17, 2013.
International Preliminary Report on Patentability received in PCT/US2013/030353 dated Sep. 23, 2014.
International Search Report and Written Opinion in Application No. PCT/US2012/032089 dated Oct. 25, 2012.
International Search Report and Written Opinion in Application No. PCT/US2013/030353 dated May 15, 2013.
Office Action dated Dec. 18, 2014 in Korean Application No. 10-2014-7029262.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10813444B2 (en) 2018-05-16 2020-10-27 Jh Rhodes Company, Inc. Porous polymeric polishing bristles and methods for their manufacture

Also Published As

Publication number Publication date
TW201347907A (zh) 2013-12-01
KR20140130240A (ko) 2014-11-07
TWI574782B (zh) 2017-03-21
JP2015510847A (ja) 2015-04-13
US20130252519A1 (en) 2013-09-26
JP6078631B2 (ja) 2017-02-08
CN104302446A (zh) 2015-01-21
WO2013142134A1 (en) 2013-09-26
KR101532896B1 (ko) 2015-06-30
CN104302446B (zh) 2017-10-31

Similar Documents

Publication Publication Date Title
KR100898303B1 (ko) 연마용 패드
US9050697B2 (en) Self-conditioning polishing pad and a method of making the same
CN101489720B (zh) 抛光垫
US9314898B2 (en) Polishing pad
CN103764346B (zh) 研磨垫及半导体器件的制造方法
KR20080002981A (ko) 연마 패드
CN102655983B (zh) 研磨垫
CN101489721A (zh) 抛光垫
US20080146129A1 (en) Fast break-in polishing pad and a method of making the same
CN101253022B (zh) 研磨垫
CN101530988B (zh) 一种研磨垫、研磨垫制造方法及一种半导体器件制造方法
JP2010274362A (ja) 発泡ポリウレタンの製造方法および研磨パッドの製造方法
KR20150027722A (ko) 폴리우레탄 연마 패드
JP2010274361A (ja) 研磨パッド
WO2012138705A2 (en) A self-conditioning polishing pad and a method of making the same
JP2004075700A (ja) 研磨シート用ポリウレタン発泡体及びその製造方法、研磨パッド用研磨シート、並びに研磨パッド
JP2007077207A (ja) 微細気泡ポリウレタン発泡体の製造方法及び、微細気泡ポリウレタン発泡体からなる研磨パッド
JP2013248693A (ja) 研磨パッド
JP2006257178A (ja) 微細気泡ポリウレタン発泡体、微細気泡ポリウレタン発泡体シート及び、研磨パッド並びに、微細気泡ポリウレタン発泡体の製造方法
JP5221992B2 (ja) 研磨パッド
JP5117147B2 (ja) 研磨パッドおよび研磨パッドの製造方法
JP2017113856A (ja) 研磨パッド及びその製造方法
JP4979200B2 (ja) 研磨パッド
JP2025058774A (ja) 研磨パッド
JP2005169571A (ja) 微細気泡を有する研磨パッド用発泡ポリウレタンの製造方法。

Legal Events

Date Code Title Description
AS Assignment

Owner name: JH RHODES COMPANY, INC., ARIZONA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:DASKIEWICH, SCOTT B.;REEL/FRAME:029976/0371

Effective date: 20130312

STCF Information on status: patent grant

Free format text: PATENTED CASE

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YR, SMALL ENTITY (ORIGINAL EVENT CODE: M2551); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY

Year of fee payment: 4

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 8TH YR, SMALL ENTITY (ORIGINAL EVENT CODE: M2552); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY

Year of fee payment: 8