US8186380B2 - Decompression apparatus and inorganic porous body - Google Patents
Decompression apparatus and inorganic porous body Download PDFInfo
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- US8186380B2 US8186380B2 US12/177,630 US17763008A US8186380B2 US 8186380 B2 US8186380 B2 US 8186380B2 US 17763008 A US17763008 A US 17763008A US 8186380 B2 US8186380 B2 US 8186380B2
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- metallic
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- 230000006837 decompression Effects 0.000 title claims abstract description 54
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 238000011144 upstream manufacturing Methods 0.000 claims description 2
- 239000002245 particle Substances 0.000 description 12
- 239000011148 porous material Substances 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 7
- 239000004793 Polystyrene Substances 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 239000006260 foam Substances 0.000 description 6
- 229920002223 polystyrene Polymers 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 239000003349 gelling agent Substances 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- LIFHMKCDDVTICL-UHFFFAOYSA-N 6-(chloromethyl)phenanthridine Chemical compound C1=CC=C2C(CCl)=NC3=CC=CC=C3C2=C1 LIFHMKCDDVTICL-UHFFFAOYSA-N 0.000 description 1
- TVEXGJYMHHTVKP-UHFFFAOYSA-N 6-oxabicyclo[3.2.1]oct-3-en-7-one Chemical compound C1C2C(=O)OC1C=CC2 TVEXGJYMHHTVKP-UHFFFAOYSA-N 0.000 description 1
- 229920002873 Polyethylenimine Polymers 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 239000004088 foaming agent Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8593—Systems
- Y10T137/85978—With pump
- Y10T137/86083—Vacuum pump
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8593—Systems
- Y10T137/86928—Sequentially progressive opening or closing of plural valves
- Y10T137/86992—With subsequent closing of first opened port
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8593—Systems
- Y10T137/87265—Dividing into parallel flow paths with recombining
- Y10T137/87338—Flow passage with bypass
- Y10T137/87362—Including cleaning, treating, or heat transfer feature
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8593—Systems
- Y10T137/87265—Dividing into parallel flow paths with recombining
- Y10T137/87539—Having guide or restrictor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
- Y10T428/131—Glass, ceramic, or sintered, fused, fired, or calcined metal oxide or metal carbide containing [e.g., porcelain, brick, cement, etc.]
Definitions
- the present invention relates to a decompression apparatus and an inorganic porous body used therein. More particularly, the invention relates to a decompression apparatus having an exhaust mechanism which incorporates a cylindrical inorganic porous body therein and an inorganic porous body used therein.
- a vacuum chamber which is used as part of a dry etching apparatus, a sputtering apparatus, a CVD apparatus, a heat treatment furnace, or the like has a slow exhaust passage parallel to a main exhaust passage for buffering the pressure at the time of exhausting under various conditions such as a low pressure or a gas atmosphere having a different composition than air.
- a conventional decompression apparatus 31 has an exhaust mechanism 33 for decompressing a vacuum chamber 32 .
- the exhaust mechanism 33 has a main exhaust passage 37 .
- One end of the main exhaust passage 37 is located in the vacuum chamber 32 and is connected to an exhaust opening 35 to which a plate-like alumina filter is attached.
- the other end of the main exhaust passage 37 is connected to a vacuum pump 36 .
- the exhaust mechanism 33 further has a first opening/closing valve (main valve) 38 which is disposed in the main exhaust passage 37 , a slow exhaust passage 39 one end of which is connected to the vacuum chamber 32 directly or via the main exhaust passage 37 and other end of which is connected to the vacuum pump 36 via the main exhaust passage 37 , and a second opening/closing valve (slow exhaust valve) 40 which is disposed in the slow exhaust passage 39 and is made parallel to the first opening/closing valve 38 .
- main valve main valve
- slow exhaust passage 39 one end of which is connected to the vacuum chamber 32 directly or via the main exhaust passage 37 and other end of which is connected to the vacuum pump 36 via the main exhaust passage 37
- second opening/closing valve (slow exhaust valve) 40 which is disposed in the slow exhaust passage 39 and is made parallel to the first opening/closing valve 38 .
- FIG. 9 shows another conventional decompression apparatus 41 .
- a slow exhaust opening 42 equipped with a plate-like alumina filter 34 is provided separately from an exhaust opening 35 for increasing the exhaust rate.
- modifying the apparatus in this manner requires high cost.
- a method using a metallic mesh filter instead of the plate-like alumina filter provides such advantages that an influence on the exhaust time is small due to a large mesh size and that the filter can be attached to the exhaust opening in the apparatus without modifying the apparatus.
- the method shows a small effect of suppressing stirring-up of particles.
- a wafer handling system which has a main exhaust passage that communicates with a vacuum chamber and a vacuum pump and a slow exhaust passage that is parallel to the main exhaust passage (refer to Japanese Unexamined Patent Publication JP-A-61-228648, for example) and a horizontal processing furnace having a variable conductance valve disposed in a slow exhaust passage (refer to Japanese Unexamined Patent Publication JP-A-7-235497, for example).
- the present invention has been made in view of the above circumstances, and an object of the invention is to provide a decompression apparatus which is low in cost, provides a high exhaust rate, and can prevent stirring-up of particles as well as an inorganic porous body used therein.
- a decompression apparatus including:
- an exhaust mechanism which decompresses the vacuum chamber and including:
- a cylindrical inorganic porous body which disposed in an exhaust mechanism, for decompressing a vacuum chamber, of a decompression apparatus.
- a decompression apparatus which is low in cost, provides a high exhaust rate, and can prevent stirring-up of particles, and an inorganic porous body used therein are provided.
- FIG. 1 is a conceptual diagram of a decompression apparatus according to a first embodiment of the present invention
- FIG. 2 is an enlarged view of an inorganic porous body attaching portion of the decompression apparatus according to the first embodiment of the invention
- FIG. 3 is a vertical sectional view of an inorganic porous body which is used in the decompression apparatus according to the first embodiment of the invention
- FIG. 4 is an enlarged view of part “A” in FIG. 2 ;
- FIG. 5 is a vertical sectional view of an inorganic porous body unit which is used in a decompression apparatus according to a second embodiment of the invention.
- FIG. 6 shows a result of a slow exhaust test that was conducted by using a decompression apparatus according to the first embodiment of the invention
- FIG. 7 shows results of slow exhaust tests that were conducted by using a decompression apparatus according to the first embodiment of the invention
- FIG. 8 is a conceptual diagram of a conventional decompression apparatus.
- FIG. 9 is a conceptual diagram of another conventional decompression apparatus.
- FIG. 1 is a conceptual diagram of a decompression apparatus according to the first embodiment of the invention.
- FIG. 2 is an enlarged view of an inorganic porous body attaching portion of the decompression apparatus.
- the decompression apparatus 1 has a vacuum chamber 2 (processing chamber) which is to be decompressed to vacuum.
- the vacuum chamber 2 has an exhaust mechanism 3 for decompressing the vacuum chamber 2 to vacuum.
- the exhaust mechanism 3 has:
- a main exhaust passage 5 one end of which is connected to the vacuum chamber 2 via an exhaust opening 2 a formed at a bottom of the vacuum chamber 2 and the other end of which is connected to a vacuum pump 4 ,
- a first valve (main valve) 6 disposed in the main exhaust passage 5 ,
- a slow exhaust passage 7 one end of which is connected to the vacuum chamber 32 via the main exhaust passage 5 and other end of which is connected to the vacuum pump 36 via the main exhaust passage 5 ,
- a second valve (slow exhaust valve) 9 disposed at a downstream side of the slow exhaust passage 7 relative to the inorganic porous body 8 .
- the inorganic porous body 8 is a silica porous body and is a bottomed cylindrical shape having a bottom portion 8 b at one axial end and an opening portion at the other axial end.
- a gas-nontransmissive ring-shaped flange 8 a which is made of the same material as the inorganic porous body 8 , is monolithically formed with the inorganic porous body 8 at the opening portion side of the inorganic porous body 8 .
- the inorganic porous body 8 is disposed inside the slow exhaust passage 7 so that the substantially semi-spherical bottom portion 8 b of the inorganic porous body 8 is located on the upstream side (that is, on the side of the vacuum chamber 2 ) and that a gap “g” is formed between the inorganic porous body 8 and a slow exhaust passage wall 7 a.
- the gap “g” becomes 10 to 20 mm.
- an average pore diameter (according to JIS R1643, 1998) is 10 to 100 ⁇ m and the porosity of the inorganic porous body 8 is 20 to 70%.
- the inorganic porous body 8 is a bottomed cylindrical shape, its surface area for gas passage is increased accordingly (that is, gas-contacting area is enlarged).
- the average pore diameter is set to be a range from 10 to 100 ⁇ m and the porosity of the inorganic porous body 8 is set to be a range from 20 to 70%
- the longitudinal center axes of the slow exhaust passage 7 and the inorganic porous body 8 are made aligned with each other, and the ratio of the outer diameter of the inorganic porous body 8 to the inner diameter of the slow exhaust passage 7 is set to be 60 to 80%, fast decompression can be performed while avoiding abrupt decompression.
- the inorganic porous body 8 is attached airtightly to the slow exhaust passage 7 in a following manner.
- An O-ring 10 is fitted to an outer circumferential portion of the flange 8 a .
- a ring-shaped engagement recess 7 A 1 provided in a lower slow exhaust passage 7 A and a lower ring-shaped engagement projection 8 a 1 are engaged each other.
- the inorganic porous body 8 is erected on the lower slow exhaust passage 7 A.
- An upper slow exhaust passage 7 B is outwardly fitted to the inorganic porous body 8 from upper side while forming a gap “g” therebetween.
- a ring-shaped engagement recess 7 B 1 provided in the upper slow exhaust passage 7 B and an upper ring-shaped engagement projection 8 a 2 provided in the flange 8 a are engaged each other.
- a lower flange 7 A 2 provided in the lower slow exhaust passage 7 A and an upper flange 7 B 2 provided in the upper slow exhaust passage 7 B cooperate to hold the flange 8 a and the O-ring 10 is urged.
- the inorganic porous body 8 is attached to the slow exhaust passage 7 via the gas-nontransmissive ring-shaped flange 8 a which is made of the same material as the inorganic porous body 8 , the inorganic porous body 8 is attached easily and reliably without being damaged. Since the inorganic porous body 8 can be attached without modifying the structure of the conventional decompression apparatus to a large extent, a decompression apparatus can be provided within low cost.
- the lower slow exhaust passage 7 A and the upper slow exhaust passage 7 B are held integrally by a clamp (not shown).
- a wire gauze 11 is provided on the opening portion side of the inorganic porous body 8 .
- the wire gauze is stretched inside a ring-shaped attachment member 11 a , has smaller pore diameters than the inorganic porous body 8 and highly air permeability.
- Examples of the inorganic material other than silica are SiC and alumina. Among them, silica is preferable from the viewpoints of heat resistance, corrosion resistance, etc.
- the porous body may be an ordinary porous body of which voids having substantially the same volume are continuously connected each other.
- the porous body also may be a porous body having a 3D mesh-like skeletal structure formed so that adjoining plural spherical pores are connected to each other via communication holes.
- the material is silica glass, and the preferable average pore diameter and the preferable porosity is 10 to 50 ⁇ m and 20 to 40%, respectively.
- the material is SiC and that the preferable average pore diameter, the communication hole diameter, and the porosity is 30 to 90 ⁇ m, 10 to 20 ⁇ m, and 55 to 65%, respectively.
- the vacuum pump 4 is caused to operate in a state that the first valve 6 in the main exhaust passage 5 and the second valve 9 in the slow exhaust passage 7 are closed and then, the second valve 9 is opened.
- the gas in the vacuum chamber 2 flows to the vacuum pump 9 via the slow exhaust passage 7 , the gap g, the inorganic porous body 8 and the second valve 9 .
- the vacuum chamber 2 is decompressed.
- the inner diameter of the slow exhaust passage 7 is 100 mm and the outer diameter and proper gas flow resistance is set such that the average pore diameter and the porosity of the inorganic porous body 8 to be 60 to 80 mm, 10 to 100 ⁇ m, and 20 to 40%, respectively. Furthermore, since the gas passes through the inorganic porous body 8 having a large surface area and being a bottomed cylindrical shape via the gap “g”, the decompression can be performed quickly.
- the first embodiment can realize a decompression apparatus which is inexpensive, provides a high exhaust rate, and can prevent stirring-up of particles.
- the second embodiment employs an inorganic porous body of non-bottomed cylindrical shape.
- the decompression apparatus has the same vacuum chamber and exhaust mechanism (excluding the inorganic porous body) as shown in FIG. 1 and a porous body unit 21 is disposed in the slow exhaust passage 7 .
- the porous body unit 21 has:
- a hollow metallic vent pipe 23 which outwardly fits to the inorganic porous body 22 with a gap “c” and is formed with vent holes 23 a on a circumferential wall thereof;
- a closing member 24 which closes one end of the inorganic porous body 22 and one end of the metallic vent pipe 23 ;
- two soft gaskets 25 , 25 which are made of polytetrafluoroethylene (PTFE) and press both ends of the inorganic porous body 22 and
- the porous body unit 21 is assembled by threadedly engaging a male screw 24 b formed on the outer circumferential surface of a disc-shaped attachment projection 24 a of the closing member 24 with a female screw 23 b formed on the inside surface of the one end portion of the metallic vent pipe 23 and thereby pressing the two gaskets 25 , 25 toward the inorganic porous body 22 by the closing member 24 and the metallic attachment ring 26 .
- the porous body unit 21 is attached airtightly to the slow exhaust passage 7 in the same manner as in the first embodiment.
- a wire gauze 27 is provided on the opening portion side of the inorganic porous body 22 .
- the wire gauze 27 is stretched inside a ring-shaped attachment member 27 a , has smaller pore diameters than the inorganic porous body 22 and is high in air permeability.
- the second embodiment can realize a decompression apparatus which is inexpensive, provides a high exhaust rate, and can prevent stirring-up of particles.
- a decompression apparatus (Example 1) according to the first embodiment of the invention was produced, which is incorporated a porous body, in which a flange made of dense silica glass and having height of 15 mm, outer diameter of 50 mm and inner diameter of 24 mm, was engaged with a normal silica porous body of which voids having substantially the same volume each other are continuously connected each other.
- the normal silica porous body has height of 80 mm, outer diameter of 30 mm, inner diameter 24 mm, average pore diameter of 16 ⁇ m and porosity of 30% and of which shape is the same as that shown in FIG. 3 .
- Results are shown in FIG. 6 .
- Example 1 The exhaust time of Example 1 was much longer than that of Comparative Example 1. However, whereas 600 to 700 pieces of foam polystyrene fell from the tray to the bottom of the vacuum chamber in Comparative Example 1, no piece of foam polystyrene fell in Example 1.
- Results are shown in Table 1 and FIG. 7 .
- Example 2 in which the vacuum chamber pressure at the time of opening of the main valve was 40 kPa, the time taken to reach 1 kPa was shortened to 22 s which was 42% (16 s) shorter than 38 s of Comparative Example 2 in which the main valve was opened at the same pressure.
- Example 3 in which the vacuum chamber pressure at the time of opening of the main valve was 13 kPa, it was found that the time taken to reach 1 kPa was shortened to 56 s which was 38% (34 s) shorter than 90 s of Comparative Example 3 in which the main valve was opened at the same pressure.
- Example 4 in which the vacuum chamber pressure at the time of opening of the main valve was 7 kPa, it was found that the time taken to reach 1 kPa was shortened to 88 s which was 33% (44 s) shorter than 132 s of Comparative Example 4 in which the main valve was opened at the same pressure.
- a porous body having a 3D mesh-like skeletal structure was incorporated in a decompression apparatus and a manner of stirring-up of particles was examined by the same method as in the test 1.
- Porous body samples were manufactured by the following method.
- Foamed slurry was prepared by mixing and agitating, with an agitator, 100 parts by weight of an SiC powder having average particle diameter of 0.5 ⁇ m, 45 parts by weight of an ion-exchanged water as a liquid medium, 1 part by weight of triethanol amine lauryl sulfate as a foaming agent, 1 part by weight of carbon black and 0.2 part by weight of a B4C powder having average particle diameter of 1.4 ⁇ m as sintering assistant agents, and 5 parts by weight of polyethyleneimine as a primary gelling agent while introducing air for foaming.
- the formed body was heated at 1,780° C. for 1 hour in an Ar gas atmosphere (temporally calcined) and then calcined at 2,100° C. for 1 hour in the same atmosphere.
- a cylindrical SiC porous body having a 3D mesh-like skeletal structure in which adjoining plural spherical pores were connected to each other via communication holes was obtained.
- This SiC porous body was 80 mm in height, 30 mm in outer diameter, 24 mm in inner diameter, 80 ⁇ m in average pore diameter, 10 to 20 ⁇ m in communication hole diameter, and 60% in porosity.
- a gas-nonpermissive ring-shaped flange which was 15 mm in height, 50 mm in outer diameter, and 24 mm in inner diameter and was made of the same material as the SiC porous body was integrated with the SiC porous body.
- Example 5 in which a decompression apparatus according to the first embodiment of the invention incorporating the above-described SiC porous body was used was evaluated under the same conditions as in the above-described test 1.
- the exhaust time was equivalent to that of Comparative Example 5 in which a decompression apparatus without an inorganic porous body was used.
- the number of pieces of foam polystyrene falling from the tray to the bottom of the vacuum chamber was zero whereas it was 660 in Comparative Example 5.
- the decompression apparatus by performing the slow exhausting at initial stage where stirring up of the particles is easily occurred, and then exhausting via the main exhaust passage under low pressure state where the stirring up of the particles is suppressed, quick decompression can be realized.
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Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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JPP.2007-190462 | 2007-07-23 | ||
JP2007190462A JP2009022916A (ja) | 2007-07-23 | 2007-07-23 | 減圧装置 |
JPP.2007-279283 | 2007-10-26 | ||
JP2007279283A JP5044362B2 (ja) | 2007-10-26 | 2007-10-26 | 減圧装置 |
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US20090032127A1 US20090032127A1 (en) | 2009-02-05 |
US8186380B2 true US8186380B2 (en) | 2012-05-29 |
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US12/177,630 Active 2031-03-17 US8186380B2 (en) | 2007-07-23 | 2008-07-22 | Decompression apparatus and inorganic porous body |
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US (1) | US8186380B2 (zh) |
KR (1) | KR101012045B1 (zh) |
TW (1) | TWI386998B (zh) |
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JP5379101B2 (ja) * | 2010-09-13 | 2013-12-25 | 住友重機械工業株式会社 | クライオポンプ及びフィルタ装置 |
CN117305801B (zh) * | 2023-11-29 | 2024-03-08 | 龙焱能源科技(杭州)有限公司 | 用于基板镀膜的传动装置及镀膜传动系统 |
Citations (17)
Publication number | Priority date | Publication date | Assignee | Title |
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US619569A (en) * | 1899-02-14 | hewel | ||
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KR20040017482A (ko) * | 2002-08-21 | 2004-02-27 | 삼성전자주식회사 | 반도체 공정챔버 진공배기라인의 파우더 유입방지장치 |
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- 2008-07-21 KR KR1020080070861A patent/KR101012045B1/ko active IP Right Grant
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- 2008-07-22 TW TW97127837A patent/TWI386998B/zh active
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US20050034767A1 (en) * | 1998-12-23 | 2005-02-17 | Peter Reimer | Processing apparatus having integrated pumping system |
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US20080163950A1 (en) * | 2005-02-11 | 2008-07-10 | Elsa Andersen | Inlet Stratification Device |
US20100263758A1 (en) * | 2006-10-30 | 2010-10-21 | Young Engineering & Manufacturing, Inc. | High Flow Nozzle System for Flow Control in Bladder Surge Tanks |
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Also Published As
Publication number | Publication date |
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US20090032127A1 (en) | 2009-02-05 |
KR20090010901A (ko) | 2009-01-30 |
KR101012045B1 (ko) | 2011-01-31 |
TWI386998B (zh) | 2013-02-21 |
TW200929353A (en) | 2009-07-01 |
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