US7881120B2 - Semiconductor memory device - Google Patents

Semiconductor memory device Download PDF

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US7881120B2
US7881120B2 US12/408,260 US40826009A US7881120B2 US 7881120 B2 US7881120 B2 US 7881120B2 US 40826009 A US40826009 A US 40826009A US 7881120 B2 US7881120 B2 US 7881120B2
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sense
bit line
voltage
transistor
node
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US20090244978A1 (en
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Masahiro Yoshihara
Toshiaki Edahiro
Koji Hosono
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Kioxia Corp
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Toshiba Corp
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/067—Single-ended amplifiers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/06—Sense amplifier related aspects
    • G11C2207/063—Current sense amplifiers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/06—Sense amplifier related aspects
    • G11C2207/068—Integrator type sense amplifier

Definitions

  • the present invention relates to a semiconductor memory device such as NAND-cell, NOR-cell, DINOR (Divided bit line NOR)-cell and AND-cell type EEPROMs, and more particularly to a semiconductor memory device including an improved sense amplifier of the current sense type.
  • NAND-type flash memories have faced increases in use in handling massive data such as images and motion pictures in mobile devices and so forth and sharp rises in demand.
  • a flash memory utilizes a multivalue technology that enables one memory cell to store 2-bit or more information, thereby storing a larger amount of information in a smaller chip area.
  • the NAND-type has a NAND string structure of serially connected memory cells, which results in small cell current. Therefore, it is required to sense the small cell current accurately.
  • a sense amplifier in a semiconductor memory device such as the flash memory basically senses the presence/absence of or the magnitude of the cell current flowing in accordance with data in a memory cell to determine the value of the data.
  • the sense amplifier is usually connected to a bit line (data line) connected to a plurality of memory cells, and the sense system is roughly divided into the voltage sense type and the current sense type.
  • the sense amplifier of the voltage sense type precharges a bit line isolated from the memory cells up to a certain voltage, then discharges the bit line through a selected memory cell, and senses the discharged state of the bit line at a sense node connected to the bit line. On sensing data, the bit line is isolated from the current source load to sense the bit line voltage determined by the cell data.
  • the sense amplifier of the current sense type supplies a read current flowing in the memory cell via the bit line to sense data. Also in this case, the cell data determines the bit line voltage, and finally data determination at the sense node connected to the bit line is executed by sensing a difference in voltage on the sense node based on the difference in cell current.
  • the sense amplifier of the voltage sense type and the sense amplifier of the current sense type have the following advantages and disadvantages.
  • the voltage sense type utilizes charging and discharging the bit line and accordingly requires less power consumption. In a massive memory having a larger bit line capacity, though, charging and discharging consumes time, which causes difficulty in fast sensing. In addition, the bit line voltage is changed with relatively large amplitude in accordance with cell data, which causes a problem associated with noises between adjacent bit lines.
  • the sense amplifier of the current sense type supplies a read current flowing in the memory cell via the bit line to sense data, thereby achieving fast sensing.
  • a clamp transistor pre-sense amplifier
  • bit lines are subjected to reading at intervals of one, and the bit lines not subjected to reading data are grounded and used as shield to preclude the mutual influence between bit lines on reading.
  • bit line potential is always controlled and fixed at a constant voltage on sensing to preclude the mutual influence between adjacent bit lines to sense all bit lines in parallel as can be executed in a sense amplifier of the ABL (All Bit Line) type proposed (Patent document 1: JP 2006-500729T, paragraphs 0080-0088, FIG. 14).
  • the sense amplifier of the ABL type precharges an inner sense node and the bit line and then discharges the charge on the sense node to the bit line.
  • the potential on the sense node lowers to a certain value, current is supplied continuously in the bit line through a different path.
  • the continuous current flowing in the bit line in this way fixes the potential on the bit line at a certain potential.
  • the precharged voltage on the bit line and the variation in potential on the sense node vary depending on whether the memory cell connected to the bit line is an on-cell or an off-cell. Accordingly, by sensing the potential on the sense node, the data state in the memory cell can be read out.
  • the sense amplifier of the ABL type on switching to the operation of releasing the charge precharged on the sense node to the bit line, the potential on the sense node lowers even if the selected cell connected to the bit line is an off-cell. Namely, when the selected cell connected to the bit line is an off-cell, the bit line can be charged completely by precharging ideally. Complete charging, however, consumes time and accordingly slight lack in charge may arise usually. Therefore, even if the selected cell is an off-cell, the sense node is discharged to the bit line to some extent on sensing. As a result, the difference in current between the on-cell and the off-cell decreases and the difference in potential appeared on the sense node also decreases, resulting in a reduction in sense margin.
  • the present invention provides a semiconductor memory device, comprising: a plurality of memory cells connected to a bit line; and a sense amplifier operative to sense the magnitude of cell current flowing via the bit line in a selected memory cell connected to the bit line to determine the value of data stored in the memory cell.
  • the sense amplifier includes a first transistor for precharge operative to supply current in the bit line via a first and a second sense node, a second transistor for charge transfer interposed between the first and second sense nodes, and a third transistor for continuous current supply operative to supply current in the bit line not via the first and second sense nodes.
  • the present invention provides a semiconductor memory device, comprising: a plurality of memory cells connected to a bit line; and a sense amplifier operative to sense the magnitude of cell current flowing via the bit line in a selected memory cell connected to the bit line to determine the value of data stored in the memory cell.
  • the sense amplifier includes a transistor for discrimination operative to discriminate data, a first sense node connected to the gate of the transistor for discrimination, and a second sense node operative to transfer charge to the bit line, wherein charge is transferred from the second sense node to the bit line, and then charge is selectively transferred from the first sense node to the second sense node in accordance with the voltage on the second sense node.
  • the present invention provides a semiconductor memory device, comprising: a plurality of memory cells connected to a bit line; and a sense amplifier operative to sense the magnitude of cell current flowing via the bit line in a selected memory cell connected to the bit line to determine the value of data stored in the memory cell.
  • the sense amplifier includes a first and a second sense node, wherein the sense amplifier, on sensing, precharges the first and second sense nodes and the bit line, transfers charge from the second sense node to the bit line, selectively transfers charge from the first sense node to the second sense node in accordance with the voltage on the second sense node after charge transfer, and discriminates data in the memory cell by the voltage on the first sense node.
  • FIG. 1 is a circuit diagram of the major part of a sense amplifier in a NAND-type flash memory according to a reference example.
  • FIG. 2 is a circuit diagram showing a memory cell array connected to the sense amplifier.
  • FIG. 3A is a waveform diagram showing bit line waveforms on precharging by the sense amplifier.
  • FIG. 3B is a waveform diagram showing sense node waveforms on sensing by the sense amplifier.
  • FIG. 4 is a circuit diagram of the major part of a sense amplifier in a NAND-type flash memory according to a first embodiment of the present invention.
  • FIG. 5 is a waveform diagram of various control signals in the sense amplifier.
  • FIG. 6 is a waveform diagram showing sense node waveforms on sensing by the sense amplifier.
  • FIG. 7 is a circuit diagram of the major part of a sense amplifier in a NAND-type flash memory according to a second embodiment of the present invention.
  • FIG. 1 is a circuit diagram of the major part of a sense amplifier of the ABL type of the prior art. This sense amplifier may be used as a read circuit in a NAND-type flash memory and connected to a bit line in a memory cell array.
  • the NAND-type flash memory may comprise plural NAND cell units NU arranged in matrix as shown in FIG. 2 .
  • a NAND cell unit NU includes a memory cell string of plural memory cells MC 1 -MCm serially connected such that adjacent cells share a source/drain diffused layer; a selection gate transistor S 1 connected between one end of the memory cell string and a bit line BL; and a selection gate transistor S 2 connected between the other end of the memory cell string and a source line CELSRC.
  • the memory cells MC 1 -MCm have gates driven by word lines WL 1 -WLm and the selection gate transistors S 1 , S 2 have gates driven by selection gates SGD, SGS.
  • the sense amplifier of the prior art is configured as shown in FIG. 1 .
  • a sense node SEN is connected to a capacitor C 1 .
  • An NMOS transistor T 5 having a gate supplied with a reset signal RST resets an INV node of a data latch LAT. This circuit is used for sensing, which is described next.
  • the sense node SEN can be charged up to VDD.
  • the bit line BL can be charged up to around 0.5 V in voltage at the maximum, that is, the steady state.
  • Voltage waveforms of the bit line BL on precharging are shown in FIG. 3A .
  • the selected memory cell is an off-cell
  • no current flows basically in the bit line BL and accordingly the bit line voltage is charged up to the maximum or 0.5 V.
  • the selected memory cell is an on-cell
  • cell current flows in the bit line BL. Accordingly, the current flowing in the memory cell and the current supplied from the sense amplifier match with each other and reach the steady state, and the voltage on the bit line becomes a middle voltage between 0.5 V and 0 V. In this state, the current flows in the bit line BL through a current path, which is shown by I in FIG. 1 .
  • the control signal H 00 0 V is established to stop charging the capacitor C 1 on the sense node SEN.
  • the voltage level on the sense node SEN reaches a level determined by the cell current. Accordingly, this is discriminated by a discriminator including transistors T 5 -T 7 and latched at a data latch LAT.
  • FIG. 4 is a circuit diagram showing a configuration of a sense amplifier of the ABL type according to the first embodiment.
  • This sense amplifier differs from the reference example shown in FIG. 1 in that one sense node of the prior art is divided into two: a first sense node SEN and a second sense node SEN 2 , and a transistor T 11 for charge transfer is provided between both sense nodes SEN, SEN 2 in the present embodiment.
  • a PMOS transistor T 18 (first transistor) is operative to supply current in the bit line BL via the first and second sense nodes SEN, SEN 2 to precharge the sense nodes SEN, SEN 2 and the bit line BL.
  • an NMOS transistor T 11 (second transistor) for charge transfer is interposed.
  • the second sense node SEN 2 is connected to a capacitor C 11 .
  • an NMOS transistor T 13 (fourth transistor) and a transistor T 14 for bit line clamp are serially connected.
  • a serial circuit of a PMOS transistor T 10 and an NMOS transistor T 12 (third transistor) is connected.
  • the first sense node SEN is connected to the gate of a PMOS transistor T 16 for discrimination.
  • the transistor T 16 is connected to a PMOS transistor T 17 on the power source side and to an NMOS transistor T 15 on the ground side.
  • the connection point between the transistors T 15 , T 16 is connected to the INV node of the data latch LAT including inverters IV 11 , IV 12 .
  • an NMOS transistor T 19 for reset is connected.
  • the sense amplifier thus configured executes sensing over three roughly divided periods.
  • the first period is a precharge period during which current flows through the current path I in the figure.
  • the transistors T 18 , T 11 are turned on to precharge the sense nodes SEN, SEN 2 and then the transistors T 13 , T 14 are turned on to precharge the bit line BL.
  • the second period is a charge transfer period during which current flows through the current path II in the figure.
  • the transistors T 18 , T 11 are turned off to transfer charge from the second sense node SEN 2 to the bit line BL and then a certain sense voltage, V SENSE +VthN, is applied to the gate of the transistor T 11 to selectively transfer charge from the first sense node SEN to the second sense node SEN 2 .
  • the transistor T 12 is turned on to continue current supply to the bit line BL.
  • FIG. 5 is a waveform diagram of various control signals showing operation of the sense amplifier.
  • the reset signal RST is used to reset the INV node of the latch circuit LAT.
  • the control signal BLC is changed to 0.5 V+VthN, the control signal BLX to 0.7 V+VthN, the control signal XX 0 to 0.9 V+VthN, and the control signal H 00 to VDD+VthN to precharge the bit line BL via the transistors T 18 , T 11 , T 13 , T 14 through the path shown by the dotted arrow I.
  • sensing is started.
  • the control signal FLT is raised up to VDD level, thereby cutting off the charge path to the first sense node SEN and the second sense node SEN 2 .
  • the control signal H 00 is turned to 0 V, thereby switching the current path for current supplied to the bit line BL to the path II in the figure for discharging from the second sense node SEN 2 .
  • the transistor T 11 connected between the sense nodes SEN, SEN 2 is turned off. Therefore, it is made possible to prevent the discharge of charge on the sense node SEN even if the discharge of charge on the sense node SEN 2 occurs, thereby preventing the reduction in level on the sense node SEN.
  • the level on the second sense node SEN 2 gradually reduces.
  • the control signal H 00 is raised up to V SENSE (for example, 1 V)+VthN. If the selected memory cell is an on-cell, the second sense node SEN 2 lowers below 1 V. Accordingly, the transistor T 11 keeps the on-state and the charge on the first sense node SEN is transferred to the second sense node SEN 2 as shown in FIG. 6 . As a result, the first sense node SEN greatly lowers as shown in FIG. 6 .
  • the transistor T 11 keeps the off-state and the level on the first sense node SEN is kept at VDD as shown in FIG. 6 .
  • the levels on the sense nodes SEN, SEN 2 both lower.
  • the current flowing in the transistor T 13 decreases and the transistor T 12 turns on to switch the current path for current flowing in the bit line BL to a path III in FIG. 4 . Therefore, the level on the bit line BL does not change and can keep the steady state.
  • the voltage level on the sense node SEN reaches the level determined by the cell current.
  • the sense node SEN in the sense amplifier connected to the bit line BL with smaller cell current is at 0.7 V or higher and can not exceed the threshold of the PMOS transistor T 16 .
  • the INV node is still kept at the ground level GND.
  • data in the memory cell can be sensed.
  • the present embodiment makes it possible to control the level of the control signal H 00 (sense voltage) by a level of 0.9 V+VthN or higher, thereby controlling the level for executing charge transfer.
  • the level on the first sense node SEN reaches either VDD or the charge transfer level, which results in an improvement in sense margin.
  • the improvement in sense margin means that the precharge time is short correspondingly and sensing can be executed even if a sufficient difference in current between the on-cell and the off-cell can not be ensured. Accordingly, it results in fast sensing.
  • the sense voltage V SENSE applied to the gate of the transistor T 11 may be set at a middle voltage between a first voltage V 1 , which converges after charge transfer from the second sense node SEN 2 to the bit line BL when the selected memory cell is a non-cell, and a second voltage V 2 , which converges after charge transfer from the second sense node SEN 2 to the bit line BL when the selected memory cell is an off-cell.
  • FIG. 7 is a circuit diagram of a sense amplifier according to a second embodiment of the present invention.
  • the same parts as those in FIG. 4 are denoted with the same reference numerals and omitted from the following detailed description.
  • This sense amplifier differs from the preceding embodiment in that the drain of the fourth transistor T 12 is connected to the latch node LAT of the data latch LAT, and that the transistor T 19 for reset located close to the bit line is omitted.
  • sense margin can be enlarged similar to the first embodiment.
  • the sense amplifier in the NAND-type flash memory has been described by way of example though the present invention is not limited to the NAND-type flash memory but rather can be applied to other semiconductor memory devices such as NOR-type, DINOR (Divided bit line NOR)-type and AND-type EEPROMs.

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US20110103152A1 (en) 2011-05-05
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US20090244978A1 (en) 2009-10-01

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