US7189492B2 - Photosensitive composition and pattern forming method using the same - Google Patents

Photosensitive composition and pattern forming method using the same Download PDF

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Publication number
US7189492B2
US7189492B2 US10/937,270 US93727004A US7189492B2 US 7189492 B2 US7189492 B2 US 7189492B2 US 93727004 A US93727004 A US 93727004A US 7189492 B2 US7189492 B2 US 7189492B2
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United States
Prior art keywords
group
resin
general formula
photosensitive composition
compound
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US10/937,270
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US20050095532A1 (en
Inventor
Kunihiko Kodama
Kenji Wada
Kenichiro Satoh
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Fujifilm Holdings Corp
Fujifilm Corp
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Fuji Photo Film Co Ltd
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Assigned to FUJI PHOTO FILM CO., LTD. reassignment FUJI PHOTO FILM CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KODAMA, KUNIHIKO, SATOH, KENICHIRO, WADA, KENJI
Publication of US20050095532A1 publication Critical patent/US20050095532A1/en
Assigned to FUJIFILM CORPORATION reassignment FUJIFILM CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: FUJIFILM HOLDINGS CORPORATION (FORMERLY FUJI PHOTO FILM CO., LTD.)
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/108—Polyolefin or halogen containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester
US10/937,270 2003-09-10 2004-09-10 Photosensitive composition and pattern forming method using the same Active US7189492B2 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2003318276 2003-09-10
JPP.2003-318276 2003-09-10
JP2003327608 2003-09-19
JPP.2003-327608 2003-09-19
JP2003333503 2003-09-25

Publications (2)

Publication Number Publication Date
US20050095532A1 US20050095532A1 (en) 2005-05-05
US7189492B2 true US7189492B2 (en) 2007-03-13

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Family Applications (1)

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Country Status (4)

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US (1) US7189492B2 (US20050095532A1-20050505-C00012.png)
EP (1) EP1517179A1 (US20050095532A1-20050505-C00012.png)
KR (1) KR101058131B1 (US20050095532A1-20050505-C00012.png)
TW (1) TWI366067B (US20050095532A1-20050505-C00012.png)

Cited By (11)

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Publication number Priority date Publication date Assignee Title
US20060068320A1 (en) * 2004-09-30 2006-03-30 Fuji Photo Film Co., Ltd. Resist composition and method of pattern formation with the same
US20080187868A1 (en) * 2007-02-07 2008-08-07 Munirathna Padmanaban Photoactive Compounds
US20090035697A1 (en) * 2005-04-20 2009-02-05 Tokyo Ohkakogyo Co.,Ltd. Negative resist composition and method of forming resist pattern
US20090068583A1 (en) * 2005-04-20 2009-03-12 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition and method for forming resist pattern
US20090068594A1 (en) * 2005-05-02 2009-03-12 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition and method for forming resist pattern
US20090075202A1 (en) * 2004-02-16 2009-03-19 Fujifilm Corporation Photosensitive composition, compound for use in the photosensitive composition, and method of pattern formation with the photosensitive composition
US20090087782A1 (en) * 2005-07-12 2009-04-02 Rahman M Dalil Photoactive compounds
US20090181323A1 (en) * 2004-07-07 2009-07-16 Fujifilm Corporation Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same
US20100248147A1 (en) * 2007-11-19 2010-09-30 International Business Machines Corporation Photoresist compositions and process for multiple exposures with multiple layer photoresist systems
US20110294047A1 (en) * 2007-06-06 2011-12-01 Shin-Etsu Chemical Co., Ltd. Photomask blank, resist pattern forming process, and photomask preparation process
US20120148957A1 (en) * 2009-10-06 2012-06-14 Fujifilm Corporation Pattern forming method, chemical amplification resist composition and resist film

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Publication number Priority date Publication date Assignee Title
US7338740B2 (en) * 2003-03-27 2008-03-04 Fujifilm Corporation Positive resist composition
JP4772288B2 (ja) * 2003-06-05 2011-09-14 東京応化工業株式会社 ホトレジスト組成物用樹脂、ホトレジスト組成物、およびレジストパターン形成方法
JP4474246B2 (ja) * 2003-09-19 2010-06-02 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4188265B2 (ja) * 2003-10-23 2008-11-26 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
US20050214674A1 (en) * 2004-03-25 2005-09-29 Yu Sui Positive-working photoimageable bottom antireflective coating
JP4448730B2 (ja) * 2004-04-20 2010-04-14 富士フイルム株式会社 感光性組成物、該感光性組成物に用いられる化合物及び該感光性組成物を用いたパターン形成方法
US7763412B2 (en) * 2004-06-08 2010-07-27 Tokyo Ohka Kogyo Co., Ltd. Polymer, positive resist composition and method for forming resist pattern
JP4485913B2 (ja) * 2004-11-05 2010-06-23 東京応化工業株式会社 レジスト組成物の製造方法およびレジスト組成物
JP4452632B2 (ja) 2005-01-24 2010-04-21 富士フイルム株式会社 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法
JP4579019B2 (ja) * 2005-03-17 2010-11-10 富士フイルム株式会社 ポジ型レジスト組成物及び該レジスト組成物を用いたパターン形成方法
US7534548B2 (en) 2005-06-02 2009-05-19 Hynix Semiconductor Inc. Polymer for immersion lithography and photoresist composition
JP4767596B2 (ja) * 2005-06-20 2011-09-07 東京応化工業株式会社 ネガ型レジスト組成物およびレジストパターン形成方法
JP4796792B2 (ja) * 2005-06-28 2011-10-19 富士フイルム株式会社 ポジ型感光性組成物及びそれを用いたパターン形成方法
TWI403843B (zh) * 2005-09-13 2013-08-01 Fujifilm Corp 正型光阻組成物及使用它之圖案形成方法
JP2007133185A (ja) * 2005-11-10 2007-05-31 Tokyo Ohka Kogyo Co Ltd 感光性樹脂組成物及びパターン形成方法
US7678528B2 (en) * 2005-11-16 2010-03-16 Az Electronic Materials Usa Corp. Photoactive compounds
JP4691442B2 (ja) * 2005-12-09 2011-06-01 富士フイルム株式会社 ポジ型レジスト組成物およびそれを用いたパターン形成方法
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JP4539865B2 (ja) * 2006-01-06 2010-09-08 信越化学工業株式会社 ラクトン含有化合物、高分子化合物、レジスト材料及びパターン形成方法
JP5183069B2 (ja) * 2006-01-08 2013-04-17 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． フォトレジストのためのコーティング組成物
TWI440978B (zh) * 2006-02-15 2014-06-11 Sumitomo Chemical Co 化學增幅正型阻劑組合物
TWI598223B (zh) * 2006-03-10 2017-09-11 羅門哈斯電子材料有限公司 用於光微影之組成物及製程
US7799507B2 (en) * 2006-05-18 2010-09-21 Tokyo Ohka Co., Ltd. Positive resist composition for immersion lithography and method for forming resist pattern
US8637229B2 (en) * 2006-12-25 2014-01-28 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
US8530148B2 (en) * 2006-12-25 2013-09-10 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
JP4554665B2 (ja) 2006-12-25 2010-09-29 富士フイルム株式会社 パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液
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US8603733B2 (en) 2007-04-13 2013-12-10 Fujifilm Corporation Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method
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JP5238216B2 (ja) * 2007-04-17 2013-07-17 東京応化工業株式会社 化合物、酸発生剤、レジスト組成物およびレジストパターン形成方法
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US8632948B2 (en) * 2009-09-30 2014-01-21 Az Electronic Materials Usa Corp. Positive-working photoimageable bottom antireflective coating
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Citations (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0973173A (ja) 1995-06-28 1997-03-18 Fujitsu Ltd レジスト材料及びレジストパターンの形成方法
JPH0990637A (ja) 1995-07-14 1997-04-04 Fujitsu Ltd レジスト組成物及びレジストパターンの形成方法
JPH09309874A (ja) 1996-05-21 1997-12-02 Fuji Photo Film Co Ltd ポジ型感光性組成物
JPH10161313A (ja) 1996-11-29 1998-06-19 Fujitsu Ltd レジスト材料及びレジストパターンの形成方法
JP2776273B2 (ja) 1994-01-31 1998-07-16 日本電気株式会社 ビニル基を有する単量体
JPH10207069A (ja) 1997-01-24 1998-08-07 Tokyo Ohka Kogyo Co Ltd 化学増幅型ホトレジスト組成物
JPH10254139A (ja) 1997-03-12 1998-09-25 Jsr Corp 感放射線性樹脂組成物
JPH10274852A (ja) 1997-01-29 1998-10-13 Sumitomo Chem Co Ltd 化学増幅型ポジ型レジスト組成物
JPH11109632A (ja) 1997-09-30 1999-04-23 Daicel Chem Ind Ltd 放射線感光材料及びそれを用いたパターン形成方法
US5965319A (en) * 1996-07-22 1999-10-12 Fuji Photo Film Co., Ltd. Negative type image recording material
JP2000137327A (ja) 1998-08-26 2000-05-16 Sumitomo Chem Co Ltd 化学増幅型ポジ型レジスト組成物
JP2000241964A (ja) 1999-02-19 2000-09-08 Hyundai Electronics Ind Co Ltd フォトレジスト組成物、フォトレジストパターンの形成方法、及び、半導体素子
JP2001109154A (ja) 1999-10-06 2001-04-20 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
JP2001188351A (ja) 1998-08-10 2001-07-10 Toshiba Corp レジスト樹脂用モノマーおよびそれを重合単位として含むレジスト用樹脂
JP2001215704A (ja) 2000-01-31 2001-08-10 Sumitomo Chem Co Ltd 化学増幅型ポジ型レジスト組成物
US20020001770A1 (en) 1998-08-14 2002-01-03 James F. Cameron Photoacid generators and photoresists comprising same
EP1199603A1 (en) 2000-10-20 2002-04-24 Fuji Photo Film Co., Ltd. Positive photosensitive composition
JP2002296783A (ja) 2000-04-04 2002-10-09 Sumitomo Chem Co Ltd 化学増幅型ポジ型レジスト組成物
WO2002082185A1 (en) 2001-04-05 2002-10-17 Arch Specialty Chemicals, Inc. Perfluoroalkylsulfonic acid compounds for photoresists
US6492091B2 (en) * 2000-08-08 2002-12-10 Fuji Photo Film Co., Ltd. Positive photosensitive composition
US6514656B1 (en) * 1997-11-28 2003-02-04 Fuji Photo Film Co., Ltd. Positive type image forming material
WO2004107051A2 (en) 2003-05-22 2004-12-09 3M Innovative Properties Company Photoacid generators with perfluorinated multifunctional anions

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1083073A (ja) * 1996-09-09 1998-03-31 Matsushita Electric Ind Co Ltd パターン形成材料及びパターン形成方法
JP4328428B2 (ja) 1999-11-08 2009-09-09 富士フイルム株式会社 ポジ型レジスト組成物
JP4262422B2 (ja) 2001-06-28 2009-05-13 富士フイルム株式会社 ポジ型フォトレジスト組成物及びそれを用いたパターン形成方法
JP4025062B2 (ja) 2001-12-05 2007-12-19 富士フイルム株式会社 ポジ型感光性組成物

Patent Citations (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2776273B2 (ja) 1994-01-31 1998-07-16 日本電気株式会社 ビニル基を有する単量体
JPH0973173A (ja) 1995-06-28 1997-03-18 Fujitsu Ltd レジスト材料及びレジストパターンの形成方法
JPH0990637A (ja) 1995-07-14 1997-04-04 Fujitsu Ltd レジスト組成物及びレジストパターンの形成方法
JPH09309874A (ja) 1996-05-21 1997-12-02 Fuji Photo Film Co Ltd ポジ型感光性組成物
US5965319A (en) * 1996-07-22 1999-10-12 Fuji Photo Film Co., Ltd. Negative type image recording material
JPH10161313A (ja) 1996-11-29 1998-06-19 Fujitsu Ltd レジスト材料及びレジストパターンの形成方法
JPH10207069A (ja) 1997-01-24 1998-08-07 Tokyo Ohka Kogyo Co Ltd 化学増幅型ホトレジスト組成物
JPH10274852A (ja) 1997-01-29 1998-10-13 Sumitomo Chem Co Ltd 化学増幅型ポジ型レジスト組成物
JPH10254139A (ja) 1997-03-12 1998-09-25 Jsr Corp 感放射線性樹脂組成物
JPH11109632A (ja) 1997-09-30 1999-04-23 Daicel Chem Ind Ltd 放射線感光材料及びそれを用いたパターン形成方法
US6514656B1 (en) * 1997-11-28 2003-02-04 Fuji Photo Film Co., Ltd. Positive type image forming material
JP2001188351A (ja) 1998-08-10 2001-07-10 Toshiba Corp レジスト樹脂用モノマーおよびそれを重合単位として含むレジスト用樹脂
US20020001770A1 (en) 1998-08-14 2002-01-03 James F. Cameron Photoacid generators and photoresists comprising same
JP2000137327A (ja) 1998-08-26 2000-05-16 Sumitomo Chem Co Ltd 化学増幅型ポジ型レジスト組成物
JP2000241964A (ja) 1999-02-19 2000-09-08 Hyundai Electronics Ind Co Ltd フォトレジスト組成物、フォトレジストパターンの形成方法、及び、半導体素子
JP2001109154A (ja) 1999-10-06 2001-04-20 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
JP2001215704A (ja) 2000-01-31 2001-08-10 Sumitomo Chem Co Ltd 化学増幅型ポジ型レジスト組成物
JP2002296783A (ja) 2000-04-04 2002-10-09 Sumitomo Chem Co Ltd 化学増幅型ポジ型レジスト組成物
US6492091B2 (en) * 2000-08-08 2002-12-10 Fuji Photo Film Co., Ltd. Positive photosensitive composition
EP1199603A1 (en) 2000-10-20 2002-04-24 Fuji Photo Film Co., Ltd. Positive photosensitive composition
WO2002082185A1 (en) 2001-04-05 2002-10-17 Arch Specialty Chemicals, Inc. Perfluoroalkylsulfonic acid compounds for photoresists
WO2004107051A2 (en) 2003-05-22 2004-12-09 3M Innovative Properties Company Photoacid generators with perfluorinated multifunctional anions

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
European Search Report dated Feb. 7, 2005.
XP-002314167-abstract-Derwent Publications Ltd. (1998) Matsushita Denki Sangyo.

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US7709179B2 (en) * 2005-04-20 2010-05-04 Tokyo Ohka Kogyo Co., Ltd. Negative resist composition and method for forming resist pattern
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US7833693B2 (en) 2005-07-12 2010-11-16 Az Electronic Materials Usa Corp. Photoactive compounds
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