US6323945B1 - Coma aberration automatic measuring mark and measuring method - Google Patents
Coma aberration automatic measuring mark and measuring method Download PDFInfo
- Publication number
- US6323945B1 US6323945B1 US09/464,211 US46421199A US6323945B1 US 6323945 B1 US6323945 B1 US 6323945B1 US 46421199 A US46421199 A US 46421199A US 6323945 B1 US6323945 B1 US 6323945B1
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- United States
- Prior art keywords
- elongated
- isosceles triangle
- patterns
- coma aberration
- measuring
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- Expired - Fee Related
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
- G01M11/02—Testing optical properties
- G01M11/0242—Testing optical properties by measuring geometrical properties or aberrations
- G01M11/0257—Testing optical properties by measuring geometrical properties or aberrations by analyzing the image formed by the object to be tested
- G01M11/0264—Testing optical properties by measuring geometrical properties or aberrations by analyzing the image formed by the object to be tested by using targets or reference patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
- G03F7/706—Aberration measurement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70681—Metrology strategies
- G03F7/70683—Mark designs
Definitions
- the present invention relates to a coma aberration automatic measuring mark used for measuring only a coma aberration of various aberrations of a lens system used in a reduction projection exposure, and a method for measuring the coma aberration by using the coma aberration automatic measuring mark.
- a prior art coma aberration automatic measuring mark is constituted of a plurality of strip-shaped patterns L 1 L 2 , L 3 , L 4 and L 5 arranged in parallel to one another and separately from one another, at a pitch which is about a double of a wavelength of an exposure light.
- a line width of a projected pattern of each of the strip-shaped patterns L 1 , L 2 , L 3 . L 4 and L 5 is measured by for example a length measuring SEM (scanning electron microscope), and the amount of coma aberration is calculated from a difference in the line width between the strip-shaped patterns L 1 and L 5 positioned at opposite side ends of the projected coma aberration automatic measuring mark, as shown in FIGS. 1A and 1B.
- FIG. 1A illustrates a case having no coma aberration
- FIG. 1B illustrates a case having a coma aberration
- FIG. 1C illustrates a case having a spherical aberration.
- a coma aberration automatic measuring mark comprising a first-order diffraction grating composed of a plurality of elongated isosceles triangle patterns which are so arranged that the axis of symmetry passing on the center of each elongated isosceles triangle is parallel to one another, that a half of the elongated isosceles triangle patterns are located in a direction opposite to that of the remaining half of the elongated isosceles triangle patterns, and the elongated isosceles triangle patterns are located separately from one another, in a direction perpendicular to the axis of symmetry passing on the center of each elongated isosceles triangle, and at a pitch diffracting a measuring coherent light.
- the pitch diffracting the measuring coherent light is about a double of a lens design wavelength.
- the elongated isosceles triangle patterns includes a first group of elongated isosceles triangle patterns and a second group of elongated isosceles triangle patterns, which are located in symmetry to each other, in connection with a line which is positioned between the first group of elongated isosceles triangle patterns and the second group of elongated isosceles triangle patterns and which is perpendicular to the axis of symmetry passing on the center of the elongated isosceles triangle.
- This coma aberration automatic measuring mark is adapted for not only a measurement of a coma aberration but also a measurement of a telecentric property of an optical axis.
- a method for measuring a coma aberration by using a coma aberration automatic measuring mark comprising at least two first-order diffraction gratings each of composed of a plurality of elongated isosceles triangle patterns which are so arranged that the axis of symmetry passing on the center of each elongated isosceles triangle is parallel to one another, that a half of the elongated isosceles triangle patterns are located in a direction opposite to that of the remaining half of the elongated isosceles triangle patterns, and the elongated isosceles triangle patterns are located separately from one another, in a direction perpendicular to the axis of symmetry passing on the center of each elongated isosceles triangle, and at a pitch diffracting a measuring coherent light, the at least two first-order diffraction gratings being located separately from each other in
- the method includes the steps of scanning the at least two first-order diffraction gratings by the measuring coherent light, measuring a relative distance between diffraction lights generated by the at least two first-order diffraction gratings, and comparing the measured relative distance with a distance between the at least two first-order diffraction gratings.
- a distance between the at least two first-order diffraction gratings located in symmetry to each other is set to a distance which is sufficiently longer than a wavelength of a measuring coherent light and which is on the order which can make negligible an Abbe error occurring in a coordinate measuring system and a distortion occurring in a reduction projection lens.
- This method can be used for measuring a telecentric property of an optical axis, in place of measuring the coma aberration.
- the triangular patterns constituting the coma aberration automatic measuring mark are not limited to the elongated isosceles triangle patterns, but are sufficient if the triangular patterns are elongated triangular patterns which can be so located that a half of the elongated triangular patterns are located in a direction opposite to that of the remaining half of the elongated triangular patterns, and the elongated triangular patterns are located in parallel to each other and separately from one another, at a pitch diffracting a measuring coherent light, in a direction substantially perpendicular to the long axis that extends from the vertex between two long sides of three sides of the elongated triangle to the shortest side of the three sides of the elongated triangle, perpendicularly to the shortest side of the elongated triangle.
- FIGS. 1A, 1 B and 1 C are diagrammatic views of a prior art aberration automatic measuring mark and projected images thereof, for illustrating a prior art method for measuring the aberrations of the reduction projection lens system;
- FIG. 2 is a diagrammatic view of an embodiment of the coma aberration automatic measuring mark in accordance with the present invention
- FIG. 3 is a diagrammatic view illustrating a method in accordance with the present invention for measuring the coma aberration by using the embodiment of the coma aberration automatic measuring mark in accordance with the present invention
- FIG. 4 is a diagrammatic view illustrating the diffraction lights generated by the coma aberration automatic measuring mark in accordance with the present invention, in the case having no coma aberration;
- FIG. 5 is a diagrammatic view illustrating the diffraction lights generated by the coma aberration automatic measuring mark in accordance with the present invention, in the case having a coma aberration;
- FIG. 6 is a diagrammatic view illustrating the diffraction lights generated by the coma aberration automatic measuring mark in accordance with the present invention, in the case having a spherical aberration.
- FIG. 2 is a diagrammatic view of an embodiment of the coma aberration automatic measuring mark in accordance with the present invention.
- FIG. 3 is a diagrammatic view illustrating a method in accordance with the present invention for measuring the coma aberration by using the embodiment of the coma aberration automatic measuring mark in accordance with the present invention.
- the present invention is characterized by making it possible to quantitatively measure only a coma aberration of various aberrations of a lens system used in a reduction projection exposure.
- the embodiment of the coma aberration automatic measuring mark in accordance with the present invention is generally designated by the reference sign M, and includes a first-order diffraction grating composed of a plurality of elongated isosceles triangle patterns P 1 , P 2 , P 3 , P 4 , P 5 and P 6 which are arranged at a pitch which is about a double of a lens design wavelength.
- the plurality of elongated isosceles triangle patterns P 1 , P 2 , P 3 , P 4 , P 5 and P 6 are so arranged that the axis of symmetry passing on the center of each elongated isosceles triangle is parallel to one another, that a half P 1 , P 2 and P 3 of the elongated isosceles triangle patterns are located in a direction opposite to that of the remaining half P 4 , P 5 and P 6 of the elongated isosceles triangle patterns, and the elongated isosceles triangle patterns are located separately from one another, in a direction perpendicular to the axis of symmetry passing on the center of each elongated isosceles triangle, and at a pitch diffracting a measuring coherent light.
- the elongated isosceles triangle patterns P 1 , P 2 , P 3 , P 4 , P 5 and P 6 has the length which is about five times to ten times the width.
- the patterns P 1 , P 2 , P 3 , P 4 , P 5 and P 6 which constitute the coma aberration automatic measuring mark M in accordance with the present invention are formed in the form of an elongated triangle, in place of a line and space pattern shown in FIG. 1 .
- the triangular pattern is more susceptible to influence of the coma aberration, than the strip or elongated rectangular pattern in the line and space pattern, and therefore, it is possible to sensitively measure the coma aberration.
- the elongated isosceles triangle patterns P 1 , P 2 , P 3 , P 4 , P 5 and P 6 are divided into a first group which includes a first half of the elongated isosceles triangle patterns (P 1 , P 2 , P 3 ) and a second group which includes the remaining half of the elongated isosceles triangle pattern (P 4 , P 5 and P 6 ), and the direction of the first group of the elongated isosceles triangle patterns P 1 , P 2 , P 3 is opposite to the direction of the second group of the elongated isosceles triangle pattern P 4 , P 5 and P 6 .
- the elongated isosceles triangle patterns P 1 , P 2 , P 3 , P 4 , P 5 and P 6 are located separately from one another in a direction perpendicular to the axis of symmetry passing on the center of each elongated isosceles triangle, and at a “pitch which is about a double of a lens design wavelength”, which is sufficient to diffract a measuring coherent light.
- the number of the elongated isosceles triangle patterns included in the coma aberration automatic measuring mark M in accordance with the present invention is in no way limited to 6 as shown in FIG. 2, but also can be freely selected if the first-order diffraction grating is constituted.
- FIG. 3 Two coma aberration automatic measuring marks M as shown in FIG. 2, namely, two coma aberration automatic measuring marks M 1 and M 2 as shown in FIG.
- the two coma aberration automatic measuring marks M 1 and M 2 are so located that the direction of the elongated isosceles triangle patterns P 1 , P 2 , P 3 , P 4 , P 5 and P 6 included in the coma aberration automatic measuring mark M 1 are opposite to the direction of the corresponding elongated isosceles triangle patterns included in the coma aberration automatic measuring mark M 2 .
- the elongated isosceles triangle patterns P 1 , P 2 , P 3 , P 4 , P 5 and P 6 included in the coma aberration automatic measuring mark M 1 and the elongated isosceles triangle patterns included in the coma aberration automatic measuring mark M 2 are in symmetry in connection of the axis of symmetry “S”.
- the distance “R” between a center of the coma aberration automatic measuring mark M 1 and a center of the coma aberration automatic measuring mark M 2 is set to a distance which is sufficiently longer than a wavelength of a measuring coherent light and which is on the order which can make negligible an Abbe error occurring in a coordinate measuring system and a distortion occurring in a reduction projection lens.
- the two coma aberration automatic measuring marks (two first-order diffraction gratings) M 1 and M 2 separated from each other by the distance “R” are scanned by the coherent light (laser beam) as shown in FIG. 3, and as shown in FIGS. 4 and 5, a relative distance “R1” between diffraction lights “K” generated by the two coma aberration automatic measuring marks (two first-order diffraction gratings) M 1 and M 2 , is measured, and then compared with the normal distance “R” between the two first-order diffraction gratings.
- the relative distance “R1” between the diffraction lights “K” generated by the two first-order diffraction gratings M 1 and M 2 is converted into the amount of coma aberration.
- a plurality of pairs of symmetrical coma aberration automatic measuring marks M are previously provided under the same condition as shown in FIG. 3, or alternatively, the same pair of symmetrical coma aberration automatic measuring marks M are measured a plurality of times, so that the results of measurement is averaged to minimize an error to a possible extent.
- the present invention it is possible to quantify the coma aberration by a high speed automatic measurement with the result that the coma aberration in the reduction projection exposure lens can be measured precisely for a short time.
- the coma aberration automatic measuring marks M are located not only in the vertical direction as shown in FIG. 1 but also in a horizontal direction and also in a sagitall direction and in a meridional direction, at a place where the coma aberration of a lens is to be measured, it is possible to clarify the distribution of the coma aberration in the plane of the lens.
- FIG. 5 is a diagrammatic view illustrating the diffraction lights “K” generated by the coma aberration automatic measuring marks M 1 and M 2 in accordance with the present invention, in the case having a coma aberration.
- the coma aberration is the aberration in which the contrast lowers like a comet, and therefore, the patterns (P 1 and P 2 in the example shown in FIG. 5) positioned at one end of the coma aberration automatic measuring mark M are thinned.
- the projected patterns P 1 to P 3 and the projected patterns P 4 to P 6 of the coma aberration automatic measuring a mark M become asymmetrical, as shown in FIG. 5 .
- a peak position S 1 of the diffraction lights generated by the coma aberration automatic measuring mark M when it is scanned by the coherent light is deviated from a normal peak position S. Since the elongated isosceles triangle patterns P 1 , P 2 , P 3 , P 4 , P 5 and P 6 included in the coma aberration automatic measuring mark M 1 and the elongated isosceles triangle patterns included in the coma aberration automatic measuring mark M 2 are in symmetry in connection of the axis of symmetry “S”, the distance R1 between the peak position S1 of the diffraction lights generated by the coma aberration automatic measuring mark M 1 and the peak position S1 of the diffraction lights generated by the coma aberration automatic measuring mark M 2 become longer than the distance R between the normal peak position S of the diffraction lights generated by the coma aberration automatic measuring mark M 1 and the normal peak position S of the diffraction lights generated by the coma aberration automatic measuring mark M 2 when no
- FIG. 6 is a diagrammatic view illustrating the diffraction lights generated by the coma aberration automatic measuring mark in accordance with the present invention, in the case having a spherical aberration.
- the spherical aberration is the aberration in which the contrast lowers simply. Therefore, the patterns (P 1 and P 2 , and P 5 and P 6 in the example shown in FIG. 6) positioned at both ends of the coma aberration automatic measuring mark M are thinned. As a result, the projected patterns P 1 to P 3 and the projected patterns P 4 to P 6 of the coma aberration automatic measuring mark M 1 become asymmetrical, as shown in FIG. 6 .
- the ends of the patterns are thinned by the spherical aberration.
- the coma aberration automatic measuring mark in accordance with the present invention is used, the diffraction light generated by the coma aberration automatic measuring mark does not become asymmetrical, and therefore, the peak position of the diffraction lights is not deviated from the normal peak position S, as shown in FIG. 6 .
- the reason for this is that, in the two coma aberration automatic measuring marks M 1 and M 2 in symmetry to each other, the elongated isosceles triangle patterns P 1 .
- P 2 , P 3 , P 4 , P 5 and P 6 included in one coma aberration automatic measuring mark M 1 and the elongated isosceles triangle patterns included in the other coma aberration automatic measuring mark M 2 are in symmetry in connection of the axis of symmetry “S” which is perpendicular to the axis of symmetry passing on the center of each elongated isosceles triangle pattern.
- FIGS. 2 to 6 has been applied to the measurement for the coma aberration, but can be applied for measuring a telecentric property of an optical axis.
- the “center of gravity” of the detected signal (corresponding to the peak position S of the diffraction light) does not appreciably change, regardless of whether it is in the best focused condition or in a defocused condition.
- the peak position of the measured signal changes between the defocused condition of a “+” direction and the defocused condition of a “ ⁇ ” direction.
- the projected patterns of the coma aberration automatic measuring mark become asymmetrical because of the deviation of the telecentric property of the optical axis.
- This asymmetry is “0” (zero) in the best focused condition, but becomes large in the defocused condition.
- the asymmetry generated in the defocused condition of the “+” direction is reverse to the asymmetry generated in the defocused condition of the “ ⁇ ” direction.
- the two first-order diffraction gratings (each of which is the coma aberration automatic measuring mark M shown in FIG. 2) are scanned, and the distance R between the diffraction lights generated by the two first-order diffraction gratings is measured, and a gradient component of the distance between the peak positions caused by the defocusing, is obtained. If it is assumed that the gradient component thus obtained corresponds to the deviation of the telecentric property, the telecentric property can be automatically measured.
- the lens is adjusted on the basis of the measurement result, it is possible to minimize the unevenness of the line width which is caused by the coma aberration and the deviation of the telecentric property.
- the coma aberration automatic measuring mark is formed of triangular patterns, the coma aberration automatic measuring mark is susceptible to influence of the coma aberration, and therefore, it is possible to sensitively measure the coma aberration.
- the triangular patterns constituting the coma aberration automatic measuring mark are not limited to the elongated isosceles triangle patterns, but are sufficient if the triangular patterns are elongated triangular patterns which can be so located that a half of the elongated triangular patterns are located in a direction opposite to that of the remaining half of the elongated triangular patterns, and the elongated triangular patterns are located in parallel to each other and separately from one another, at a pitch diffracting a measuring coherent light, in a direction substantially perpendicular to the long axis that extends from the vertex between two long sides of three sides of the elongated triangle to the shortest side of the three sides of the elongated triangle, perpendicularly to the shortest side of the elongated triangle.
- the vertex between the two long sides of the elongated triangular patterns and a center of the shortest side of the elongated triangular patterns are located at the same pitch, respectively.
- the elongated triangular patterns are preferably so arranged that the long axis that extends from the vertex between two long sides of three sides of each triangle to the shortest side of the three sides of the same triangle, perpendicularly to the shortest side of the same triangle, is in parallel to each other, a half of the elongated triangular patterns are located in a direction opposite to that of the remaining half of the elongated triangular patterns, and the elongated triangular patterns are located separately from one another, at a pitch diffracting a measuring coherent light.
- At least two coma aberration automatic measuring marks each of which is constituted of a first-order diffraction grating composed of a plurality of elongated triangular patterns located at a pitch diffracting a measuring coherent light, are located in symmetry to each other, and are scanned by the coherent light so that the distance between diffraction lights generated by the two first-order diffraction gratings, is measured and compared with a normal distance between the two first-order diffraction gratings.
- the coma aberration can be automatically measured with a high degree of reproduction.
- the present invention can be applied for measuring the coma aberration and for measuring a telecentric property of an optical axis, the degree of versatility can be elevated.
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Testing Of Optical Devices Or Fibers (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Optical Transform (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10356299A JP2000180302A (ja) | 1998-12-15 | 1998-12-15 | コマ収差自動計測用マークと計測方法 |
| JP10-356299 | 1998-12-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US6323945B1 true US6323945B1 (en) | 2001-11-27 |
Family
ID=18448343
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US09/464,211 Expired - Fee Related US6323945B1 (en) | 1998-12-15 | 1999-12-15 | Coma aberration automatic measuring mark and measuring method |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6323945B1 (de) |
| EP (1) | EP1014071A3 (de) |
| JP (1) | JP2000180302A (de) |
| KR (1) | KR20000048140A (de) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020048018A1 (en) * | 2000-10-20 | 2002-04-25 | Masashi Fujimoto | Method for measuring coma aberration in optical system |
| US20020177057A1 (en) * | 2001-05-22 | 2002-11-28 | Nikon Precision Inc. | Measurement of critical dimensions of etched features |
| US6538753B2 (en) | 2001-05-22 | 2003-03-25 | Nikon Precision, Inc. | Method and apparatus for dimension measurement of a pattern formed by lithographic exposure tools |
| US20030211700A1 (en) * | 2002-04-19 | 2003-11-13 | Nikon Precision Inc. | Methods for critical dimension and focus mapping using critical dimension test marks |
| US20090280418A1 (en) * | 2008-05-12 | 2009-11-12 | Canon Kabushiki Kaisha | Exposure apparatus, correction method, and device manufacturing method |
| CN104330240B (zh) * | 2013-12-13 | 2016-08-31 | 北京印刷学院 | 一种用分光光度计测量光柱镭射纸光栅参数的方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106644410B (zh) * | 2016-12-21 | 2019-04-09 | 信利光电股份有限公司 | 一种摄像模组光心位置测量方法及系统 |
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| US4908656A (en) * | 1988-01-21 | 1990-03-13 | Nikon Corporation | Method of dimension measurement for a pattern formed by exposure apparatus, and method for setting exposure conditions and for inspecting exposure precision |
| US5300786A (en) * | 1992-10-28 | 1994-04-05 | International Business Machines Corporation | Optical focus phase shift test pattern, monitoring system and process |
| US5402224A (en) * | 1992-09-25 | 1995-03-28 | Nikon Corporation | Distortion inspecting method for projection optical system |
| US5615006A (en) * | 1992-10-02 | 1997-03-25 | Nikon Corporation | Imaging characteristic and asymetric abrerration measurement of projection optical system |
| JPH10232185A (ja) | 1996-12-19 | 1998-09-02 | Nikon Corp | 投影光学系の収差測定方法 |
| JPH10260108A (ja) | 1997-03-14 | 1998-09-29 | Nikon Corp | リソグラフィツールの性能特性を判定するための方法及び装置 |
| JPH11297614A (ja) * | 1998-04-09 | 1999-10-29 | Nikon Corp | コマ収差測定装置および該装置を備えた投影露光装置 |
| US6088113A (en) * | 1998-02-17 | 2000-07-11 | Samsung Electronics Co., Ltd. | Focus test mask for projection exposure system, focus monitoring system using the same, and focus monitoring method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2621179B2 (ja) * | 1987-06-09 | 1997-06-18 | 株式会社ニコン | アライメント方法 |
| TW357262B (en) * | 1996-12-19 | 1999-05-01 | Nikon Corp | Method for the measurement of aberration of optical projection system, a mask and a exposure device for optical project system |
-
1998
- 1998-12-15 JP JP10356299A patent/JP2000180302A/ja active Pending
-
1999
- 1999-12-14 KR KR1019990057659A patent/KR20000048140A/ko not_active Ceased
- 1999-12-15 EP EP99125043A patent/EP1014071A3/de not_active Withdrawn
- 1999-12-15 US US09/464,211 patent/US6323945B1/en not_active Expired - Fee Related
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4814829A (en) * | 1986-06-12 | 1989-03-21 | Canon Kabushiki Kaisha | Projection exposure apparatus |
| US4908656A (en) * | 1988-01-21 | 1990-03-13 | Nikon Corporation | Method of dimension measurement for a pattern formed by exposure apparatus, and method for setting exposure conditions and for inspecting exposure precision |
| US5402224A (en) * | 1992-09-25 | 1995-03-28 | Nikon Corporation | Distortion inspecting method for projection optical system |
| US5615006A (en) * | 1992-10-02 | 1997-03-25 | Nikon Corporation | Imaging characteristic and asymetric abrerration measurement of projection optical system |
| US5300786A (en) * | 1992-10-28 | 1994-04-05 | International Business Machines Corporation | Optical focus phase shift test pattern, monitoring system and process |
| JPH10232185A (ja) | 1996-12-19 | 1998-09-02 | Nikon Corp | 投影光学系の収差測定方法 |
| JPH10260108A (ja) | 1997-03-14 | 1998-09-29 | Nikon Corp | リソグラフィツールの性能特性を判定するための方法及び装置 |
| US6088113A (en) * | 1998-02-17 | 2000-07-11 | Samsung Electronics Co., Ltd. | Focus test mask for projection exposure system, focus monitoring system using the same, and focus monitoring method |
| JPH11297614A (ja) * | 1998-04-09 | 1999-10-29 | Nikon Corp | コマ収差測定装置および該装置を備えた投影露光装置 |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020048018A1 (en) * | 2000-10-20 | 2002-04-25 | Masashi Fujimoto | Method for measuring coma aberration in optical system |
| US20020177057A1 (en) * | 2001-05-22 | 2002-11-28 | Nikon Precision Inc. | Measurement of critical dimensions of etched features |
| US6538753B2 (en) | 2001-05-22 | 2003-03-25 | Nikon Precision, Inc. | Method and apparatus for dimension measurement of a pattern formed by lithographic exposure tools |
| US6956659B2 (en) | 2001-05-22 | 2005-10-18 | Nikon Precision Inc. | Measurement of critical dimensions of etched features |
| US20030211700A1 (en) * | 2002-04-19 | 2003-11-13 | Nikon Precision Inc. | Methods for critical dimension and focus mapping using critical dimension test marks |
| US6974653B2 (en) | 2002-04-19 | 2005-12-13 | Nikon Precision Inc. | Methods for critical dimension and focus mapping using critical dimension test marks |
| US20090280418A1 (en) * | 2008-05-12 | 2009-11-12 | Canon Kabushiki Kaisha | Exposure apparatus, correction method, and device manufacturing method |
| CN104330240B (zh) * | 2013-12-13 | 2016-08-31 | 北京印刷学院 | 一种用分光光度计测量光柱镭射纸光栅参数的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1014071A2 (de) | 2000-06-28 |
| EP1014071A3 (de) | 2000-07-12 |
| JP2000180302A (ja) | 2000-06-30 |
| KR20000048140A (ko) | 2000-07-25 |
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