US5445993A - Semiconductor laser diode and method for manufacturing the same - Google Patents

Semiconductor laser diode and method for manufacturing the same Download PDF

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US5445993A
US5445993A US08/067,834 US6783493A US5445993A US 5445993 A US5445993 A US 5445993A US 6783493 A US6783493 A US 6783493A US 5445993 A US5445993 A US 5445993A
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layer
quantum well
laser diode
semiconductor laser
manufacturing
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Hyung S. Ahn
Min S. No
Sang K. Si
Won T. Choi
Joo O. Seo
Jin H. Lim
Min Yang
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LG Electronics Inc
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Gold Star Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3216—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities quantum well or superlattice cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/962—Quantum dots and lines

Definitions

  • the present invention relates to a semiconductor laser diode and a method for manufacturing the same. More particularly, the invention relates to a semiconductor laser diode and a method for manufacturing the same in which an internal current injection groove is formed by a selective growth.
  • a laser diode has a refractive index waveguide type structure to obtain a stable, single mode, low threshold voltage for driving and high quantum efficiency.
  • Such laser diodes of the refractive index waveguide type usually have an internal current confinement layer positioned at the upper side of an active layer or the lower side of the active layer in accordance with the conductive type of a substrate, so as to effectively confine the current.
  • FIG. 1 shows a sectional view of a conventional semiconductor laser diode in which a current injection groove is formed by a selective etching.
  • a first clad layer 2 an active layer 3, a second clad layer 4, a first semiconductor layer 5, a current confinement layer 6 and a second semiconductor layer 7 are formed in that order.
  • the second semiconductor layer 7 is then selectively removed with an etching solution.
  • a predetermined portion of the current confinement layer 6 is then slope-etched to form a current injection groove.
  • a third clad layer 8 and a cap layer 9 are formed in that order and then electrodes 10, 11 are formed over the upper surface of cap layer 9 and the bottom surface of substrate 1, respectively.
  • a semiconductor laser diode In such a semiconductor laser diode, the clad layer 4 is directly exposed without the first semiconductor 5 since it is impossible to merely etch the current confinement layer 6 selectively.
  • a semiconductor laser diode has been proposed in which growth layers are formed by a metal organic chemical vapour deposition and then a current injection groove is formed by a selective etching, as above mentioned, by Japanese patent publication No. 63-49396 and European patent No. 0,132,081.
  • the proposed method selectively etches a GaAs, serving as the current confinement layer 6, and AlGaAs, serving as the second clad layer 4, with NH 4 OH:H 2 O as the etching solution, to form the current injection groove.
  • a portion of AlGaAs serving as the second clad layer 4 corresponding to the current injection groove is exposed and the exposed AlGaAs is oxidized, thereby significantly affecting the characteristic of the semiconductor laser diode.
  • European Patent No. 0,142,845 has used Al 0 .7 Ga 0 .3 As for the material of the current confinement layer 6, so that AlGaAs serving as the second clad layer 4 is not oxidized.
  • AlGaAs serving as the second clad layer 4 is not oxidized.
  • n-type GaAs substrate 1 an n-type Al 0 .45 Ga 0 .55 As clad layer 2, an undoped Al 0 .45 Ga 0 .55 As active layer 3, a p-type Al 0 .45 GaAs 4 having a thickness of 0.1 ⁇ m, a p-type GaAs oxidation prevention film 5 having a thickness of 0.005 ⁇ m, an n-type Al 0 .7 Ga 0 .3 As current confinement layer 6 having a thickness of 0.8 ⁇ m, and an n-type GaAs oxidation prevention film 7 having a thickness of 0.005 ⁇ m are grown in this order, using a molecular beam epitaxy (MBE) method.
  • MBE molecular beam epitaxy
  • a photoresist is subjected to a photolithography process to form a stripe groove pattern having a width of 20 ⁇ m (not shown) and then the n-type GaAs oxidation prevention film 7 is etched with H 2 O 2 :NH 4 OH--5:1 serving as an etching solution using the stripe groove pattern as a mask.
  • n-type Al 0 .7 Ga 0 .3 As current confinement layer 6 is etched by an HF solution, the surface of the p-type GaAs oxidation prevention film is exposed and the etching is stopped. Thereafter, a p-type Al 0 .45 Ga 0 .55 As 8 and a p-type GaAs 9 are grown in that order by an MBE method and then electrodes 10,11 are formed.
  • the internal current confinement layer 6 confines the current effectively. Accordingly, it is possible to obtain the semiconductor laser diode having a low threshold current.
  • the AlGaAs layer is exposed and oxidized after the etching for forming the current injection groove. Accordingly, the quality of a layer to be formed on the AlGaAs may be reduced, thereby deteriorating the reliability of the semiconductor laser diode.
  • European patent 0,142,845 makes it possible to solve the above problems.
  • the technique has disadvantages in that the etching process should be executed twice to form the current injection groove, it is difficult to control the etching in a lateral direction, and the side portion of the current injection groove is oxidized after the etching.
  • the technique since Al 0 .7 Ga 0 .3 As is used as the material of the current confinement layer, the technique has another disadvantage where n-type oxidation prevention film should be essentially grown on the Al 0 .7 Ga 0 .3 As layer.
  • an object of the invention is to eliminate the above-mentioned disadvantages encountered in the prior art and to provide a method for manufacturing a semiconductor laser diode in which a current injection groove is formed by a selective growth method.
  • Another object of the invention is to provide a semiconductor laser diode in which a current injection groove is formed by a selective growth method.
  • the present invention provides a method for manufacturing a semiconductor laser diode comprising the steps of forming an active layer having a double hetero junction structure on a semiconductor substrate; forming a current confinement layer selectively on the active layer to form a current injection groove on the active layer; and forming a clad layer having a flat surface on the current injection groove and the current confinement layer.
  • the present invention provides a semiconductor laser diode comprising a semiconductor substrate; an active layer having a double hetero junction structure formed on the semiconductor substrate; a current confinement layer and a current injection groove formed on the active layer; a first quantum well layer formed between the active layer and the current confinement layer; a second quantum well layer formed at the current injection groove region of an upper portion of the active layer; and a clad layer having a flat surface formed on the current injection groove and the current confinement layer.
  • FIG. 1 is a sectional view showing the structure of a conventional semiconductor laser diode
  • FIG. 2 is a sectional view showing the structure of a semiconductor laser diode in accordance with a first embodiment of the present invention
  • FIGS. 3a to 3l are sectional views showing a method for manufacturing a semiconductor laser diode in accordance with a first embodiment of the present invention
  • FIG. 4 is a sectional view showing the structure of a semiconductor laser diode in accordance with the second embodiment of the present invention.
  • FIGS. 5a to 5l are sectional views showing a method for manufacturing a semiconductor laser diode in accordance with the second embodiment of the present invention.
  • FIG. 6 is a diagram showing a graded layer in accordance with the second embodiment of the present invention.
  • FIG. 7 is a diagram showing a graded layer in accordance with a third embodiment of the present invention.
  • FIG. 8 is a typical I-L curve diagram of a semiconductor laser diode in accordance with the first embodiment of the present invention.
  • FIG. 9 is a typical I-L curve diagram of a semiconductor laser diode in accordance with the second embodiment of the present invention.
  • a semiconductor laser diode includes an n-type substrate 21 made of GaAs, an n-type buffer layer 22 made of GaAs, a first clad layer 23 made of n-type Al 0 .45 Ga 0 .55 As, an active layer 24 made of an undoped AlGaAs formed on the first clad layer 23, a second clad layer 25 which is made of p-type Al 0 .45 Ga 0 .55 As with a thickness of 0.2-0.6 ⁇ m and is formed on the active layer 24, a quantum well layer 26 which is made of an undoped GaAs or low concentration p-type GaAs or low concentration n-type GaAs, with a thickness of 30-110 ⁇ except at a current injection groove (100) at the surface of the second clad layer 25, a current confinement layer 31 formed on the quantum well layer 26, a third clad layer 32 made of p-type Al 0 .
  • Another quantum well layer may be also formed in the current injection groove with a thickness which is smaller than one-half of the thickness ofthe quantum well layer 26.
  • FIGS. 3a to 3l a method for manufacturing a semiconductor laser diode is illustrated in accordance with the first embodiment of the present invention.
  • a method for manufacturing a semiconductor laser diode is illustrated in accordance with the first embodiment of the present invention.
  • an n-type GaAs buffer layer 22 with a thickness of greater than 0.5 ⁇ m is formed using an MOCVD method.
  • a first clad layer 23 made of n-type Al 0 .45 Ga 0 .55 As and an active layer 24 made of an undoped AlGaAs are formed on the n-type GaAs buffer layer 22, in that order.
  • a second clad layer 25 made of p-type Al 0 .45 Ga 0 .55As is formed with a thickness of 0.2-0.65 ⁇ m on the active layer 24 and then a quantum well layer 26 made of an undoped GaAs or a p-type GaAs having a low concentration or an n-type GaAs is formed on the second clad layer 25 with a thickness of 30-100 ⁇ .
  • an impurity permeation prevention film 27 made of p-type Al x Ga 1-x As (x ⁇ 0.6).
  • the impurity permeation prevention film 27 prevents the permeation of silicon and the reason why the impurity permeation prevention film 27 should be formed is as follows.
  • an insulation film such as SiO 2 or Si 3 N 4 and having a completely different characteristic from GaAs, is used as a mask upon the selective growth of the current confinement layer.
  • a mono-crystal having a characteristic such as GaAs substrate is not grown at regions in which the insulation film is formed but a poly-crystal exists at such regions.
  • the insulation film such as SiO 2 or Si 3 N 4
  • the impurity permeation prevention film 27 is formed on the quantum well layer 26 having a thickness of greater than 0.1 ⁇ m so as to protect the quantum well layer 26 from the permeation of silicon impurities.
  • an insulation film 28 such as SiO 2 or Si 3 N 4 is deposited on the impurity permeation prevention film 27, as shown in FIG. 3b.
  • a first photo-resist 29 is coated on the insulation film 28 as shown in FIG. 3c.
  • the photo-resist 29 is subjected to a patterning process to provide a constant width (for example, about 5 ⁇ m), thereby defining the region of the current injection groove.
  • the insulation film is selectively etched using the patterned first photo-resist as a mask and then the patterned first photo-resist is removed.
  • a second photo-resist 30 of the same kind as the first photo-resist 29 is coated over the whole surface including the surface of the insulation film 28 as shown in FIG. 3f and then the second photo-resist 30 is patterned through a photolithography process such that a constant width W 2 (for example, about 10 ⁇ m) results, as shown in FIG. 3g.
  • the impurity permeation prevention film 27 is wet-etched with an HF solution using the patterned second photo-resist 30 as a mask, as shown inFIG. 3h. At this time, the wet-etching is stopped at the quantum well layer26 since the quantum well layer 26 positioned below the impurity permeationprevention film 27 is made of GaAs.
  • the impurity permeation prevent film 27 is etched such that a width of 4 ⁇ m result similar to width W 1 (5 ⁇ m) of the patterned first photo-resist 29.
  • a current confinement layer 31 is grown over the whole surface ofthe quantum well layer 26 shown in FIG. 3i using a metal organic chemical vapour deposition (MOCVD) method as shown in FIG. 3j, thus forming a current injection groove 100.
  • MOCVD metal organic chemical vapour deposition
  • the process shown in FIG. 3j utilizes a principle in which a crystal material having a certain characteristic can be grown on a crystal material having the same characteristic (that is, if the wafer shown in FIG. 3i is subjected to a crystal growth process).
  • GaAs crystal is not grown on the insulation film 28 and the impurity permeation prevention film 27 which remains on the GaAs quantum well layer 26, is merely grown on a portion in which the quantum well layer 26 is exposed, that is, a region except for the current injection groove. Accordingly, the current confinement layer and the current injection groove can be formed simultaneously without another process.
  • the shape of the current injection groove may be varied along the crystal direction of the quantum well layer 26 as shown in FIG. 3i.
  • the stripe direction of the current injection groove is decided in accordance with whether the crystaldirection of a layer (quantum well layer 26) positioned just below the second photo-resist 30 is ⁇ 011> or ⁇ 011> and ⁇ 011> or ⁇ 011>.
  • the current injection groove is formed with a V shape.
  • the current injection groove is formed with a reverse mesa shape.
  • the wafer shown in FIG. 3j is dipped into an HF solution, whichis a selective etching solution, to remove the impurity permeation prevention film 27 and the insulation film 28, as shown in FIG. 3k.
  • an HF solution whichis a selective etching solution, to remove the impurity permeation prevention film 27 and the insulation film 28, as shown in FIG. 3k.
  • the quantum well layer 26 in the current injection groove is also etched until the thickness is reduced to less than one-half of the original thickness and the current confinement layer 31 may be also removed by the HF solution together with a natural oxide which is formed thereon as they are exposed to air.
  • the wafer shown in FIG. 3k is immediately cleaned with deionizedwater after the above-etching using the HF solution.
  • a third clad layer 32 made of p-type A 0 .45 Ga 0 .55 As and p-type cap layer 33 made of GaAs are formed on the current confinement layer 31, in this order, using a liquid phase epitaxy method, as shown in FIG. 3l.
  • the third clad layer 32 made of A 0 .45 Ga 0 .55 As is grown on the quantum well layer 26, a phenomenon occurs in which the quantum well layer 26 made of GaAs is melted back into the third clad layer 32 made of A 0 .45 Ga 0 .55 As, thereby enabling the defects in region A of FIG. 3l to be completely removed.
  • the third clad layer 32 and cap layer 33 may be grown using an MOCVD method.
  • the impurity permeation prevention film 27 made of an undoped GaAs may be directly formed on the second clad layer25 in the current injection groove without forming the quantum well layer 26. Also, the impurity permeation prevention film 27 should be formed with a thickness of greater than 0.1 ⁇ m to prevent the grainy texture phenomenon in which the surface becomes rough due to an insulation film such as SiO 2 or Si 3 N 4 , as mentioned above.
  • the quantum well layer is not used in the above case, it is possible to grow the third clad layer 32 and the cap layer 33 with an MOCVD method or an LPE method.
  • a double film of phosphorous silicate glass(PSG)/SiO 2 or PSG/Si 3 N 4 serving as a mask upon the selective growth may be deposited on the quantum well layer 26 in place of the above impurity permeation preventionfilm 27. This prevents the grainy texture phenomenon in which the surface of the quantum well layer 26 becomes rough when the insulation film 28 such as SiO 2 or Si 3 N 4 is used as a mask upon the selectivegrowth.
  • GaAs-SiO 2 film may be used as a mask. That is, the quantum well layer 26 is subjected to a heat treatment process under the condition of O 2 atmosphere, thereby to obtain the GaAs-SiO 2 film serving as a mask upon the selective growth.
  • FIG. 4 is a sectional view showing the structure of a semiconductor laser diode according to a second embodiment of the present invention.
  • an AlGaAs layer in which the content of Al is gradually decreased or increased in accordance with its height, is disposed between an active layer made of undoped GaAs and clad layers made of AlGaAs to obtain a funnel effect which increases the confinement of electrons in the active layer and the guide effect of electron-magneticwave which is more effective. It is possible to lower the threshold currentof semiconductor laser diode.
  • the semiconductor laser diode shown in FIG. 4 is called a graded index separate confinement hetero structure laser diode (GRIN-SCH laser diode).
  • GRIN-SCH laser diode graded index separate confinement hetero structure laser diode
  • the semiconductor laser diode according to the second embodiment of the present invention includes a substrate 21 made of GaAs, a buffer layer 22 made of an n-type GaAs and formed on the substrate 21, a first clad layer 23 made of an n-type Al 0 .6 Ga 0 .4 AS and formed on the buffer layer 22, a first graded layer 36 made of n-type Al 0 .6 ⁇ 0.2 Ga 0 .4 ⁇ 0.8 As and formed on the first clad layer 23, an active layer 24 made of an undoped GaAs and formed on the first graded layer 36, a second graded layer 37 made of a p-type Al 0 .6 ⁇ 0.2 Ga 0 .4 ⁇ 0.8 As and formed on the active layer 24, and a second clad layer 25 made of a p-type Al 0 .6 ⁇ 0.2 Ga 0 .4 ⁇ 0.8As and formed on the second graded layer 37.
  • a quantum well layer 26 is formed which is made of an undoped GaAs
  • the quantum well layer 26 has different thicknesses at the current injection groove region and at the remaining region (namely, the current confinement region), i.e., the region excluding the current injection groove region. That is, the quantum well layer 26 is formed having a thickness t 1 on the current confinement region and having a thicknesst 2 , which is less than one-half of the thickness t 1 , in the current injection region (0 ⁇ t 2 ⁇ 1/2t 1 ).
  • a current confinement layer 31 is formed over the quantum well layer 26 corresponding to the current confinement layer.
  • a third clad layer is formed which is made of a p-type Al 0 .6 Ga 0 .4 AS.
  • a cap layer 33 is formed which is made of a p-type GaAs. Over the upper surface of the cap layer 33 and the lower surface of the substrate 21, a p-type electrode 34 and an n-type electrode35 are formed, respectively.
  • abuffer layer 22 is formed using the MOCVD method which is made of an n-typeGaAs having a thickness of more than 0.5 ⁇ m.
  • a first clad layer 23 made of an n-type Al 0 .6 Ga 0 .4AS and a first graded layer 36 made of an n-type Al 0 .6 ⁇ 0.2 Ga 0 .4 ⁇ 0.8 As are formed over the buffer layer 22, in this order.
  • a quantum well layer 26 made of an undoped GaAs or a p-type GaAs having a low concentration or an n-type GaAs having a low concentrations is formed with a thickness of 30-100 ⁇ on the second clad layer 25.
  • an impurity permeation prevention film 27 which is made of a p-type Al x Ga 1-x AS (x ⁇ 0.5) is formed over the quantum well layer 26.
  • a selective removal film 38 is then formed over the impurity permeation prevention film 27. At this time, the selective removal film 38 is formed with a thickness of more than 1000 ⁇ .
  • an insulation film 28 such as Si 3 N 4 or SiO 2 is formed with a plasma enhanced chemical vapour deposition method (PECVD method) which hasa thickness of about 500-3000 ⁇ .
  • PECVD method plasma enhanced chemical vapour deposition method
  • the patterned first photo-resist 29 is removed, and then, over the whole surface, including the surface of the insulation film28, a second photo-resist 30 (the same kind as the above first photo-resist29) is coated.
  • W 2 constant width
  • a current confinement layer 31 is grown on the exposed quantum well layer 26 with an MOCVD method, thereby forming a current injection groove 100, as shown in FIG. 5j.
  • the wafer shown in FIG. 5j is dipped into a buffered oxide etchant to remove the insulation film 28, as shown in FIG. 5k.
  • the wafer is again dipped into the H 2 SO 4 ; H 2 O 2 ; C 2 H 4 (OH) 2 solution to remove the selective removal film 38 and the impurity permeation prevention film 27.
  • a third clad layer 32 made of a p-type Al 0 .6 GaAsand a cap layer 33 made of a p-type GaAs are formed on the surfaces of the current confinement layer 31 and the quantum well layer 26 corresponding to the current injection groove 100 using a MOCVD method. Then, a p-type electrode and an n-type electrode are formed on the upper surface of the cap layer 33 and the lower surface of the substrate 21, respectively, to complete the semiconductor laser diode according to the second embodiment.
  • the shape of current injection groove 100 may be varied in accordance with the stripe direction of current injection groove 100, similar to the firstembodiment. Also, upon the formation of the patterned second photo-resist, the stripe direction of the current injection groove is decided in accordance with the crystal direction of quantum well layer 26 which is disposed just below the second photoresist. In particular, if the crystal direction is ⁇ 011> or ⁇ 011>, the current injection groove 100 is formed with a V shape. On the other hand, the current injection groove 100 is formed having a reverse mesa shape if the crystal direction is ⁇ 011> or ⁇ 011>. Similar to the first embodiment, the defects in a region A of FIG. 5l is completely removed since the quantum well layer 26 made of GaAs is melted into the third clad layer 32 made of Al 0 .6 Ga 0 .4 As.
  • the semiconductor laser diode of the present invention and themethod for manufacturing the same have an advantage in that the current injection groove, having a constant shape in a wafer having a large area, can be stably formed since the current injection groove is formed using a selective growth process instead of an etching process.
  • the reliability of the semiconductor laser diode of the present invention is improved since the defects of the exposed layer due to an etching process is naturally removed during the execution of another process.
  • the semiconductor laser diodes according to the first embodiment and the second embodiment have very low threshold currents (about 50 mA and 5-20 mA), respectively, as shown in FIG. 8 and FIG. 9 which are respective I-L curve diagrams.

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US20040262259A1 (en) * 2003-06-24 2004-12-30 Kim Dong Joon Method for manufacturing semiconductor laser device

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Takao Shibutani, et al., A Novel High Power Laser Structure with Current Blocked Regions Near Cavity Facets, IEEE Journal of Quantum Electronics, vol. QE 23, No. 6 (Jun. 1987). *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5764668A (en) * 1993-12-24 1998-06-09 Mitsui Petrochemical Industries, Ltd. Semiconductor laser device
US5840596A (en) * 1996-06-17 1998-11-24 Nothern Telecom Limited Method of manufacturing complementary modulation-doped field effect transistors
US20040262259A1 (en) * 2003-06-24 2004-12-30 Kim Dong Joon Method for manufacturing semiconductor laser device
US7192884B2 (en) 2003-06-24 2007-03-20 Samsung Electro-Mechanics Co., Ltd. Method for manufacturing semiconductor laser device

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JPH0669599A (ja) 1994-03-11
KR970001896B1 (ko) 1997-02-18
KR930024238A (ko) 1993-12-22

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