US5157323A - Switched low-loss attenuator - Google Patents

Switched low-loss attenuator Download PDF

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Publication number
US5157323A
US5157323A US07/575,407 US57540790A US5157323A US 5157323 A US5157323 A US 5157323A US 57540790 A US57540790 A US 57540790A US 5157323 A US5157323 A US 5157323A
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fets
pair
fet
output terminal
gates
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US07/575,407
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Fazal Ali
Allen F. Podell
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Pacific Monolithics Inc
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Pacific Monolithics Inc
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Assigned to PACIFIC MONOLITHICS, A CORP. OF CA reassignment PACIFIC MONOLITHICS, A CORP. OF CA ASSIGNMENT OF ASSIGNORS INTEREST. Assignors: ALI, FAZAL, PODELL, ALLEN F.
Priority to EP91305873A priority patent/EP0474337A1/en
Priority to JP3217386A priority patent/JPH06112767A/ja
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Publication of US5157323A publication Critical patent/US5157323A/en
Assigned to PACIFIC MONOLITHICS, INC. reassignment PACIFIC MONOLITHICS, INC. CHANGE OF ADDRESS Assignors: PACIFIC MONOLITHICS, INC.
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/24—Frequency-independent attenuators
    • H03H11/245—Frequency-independent attenuators using field-effect transistor

Definitions

  • This invention relates to attenuators, and particularly to attenuators formed with switched resistive elements for varying the element configuration and attenuation values.
  • Voltage-controlled variable attenuators have been widely used for automatic gain control circuits as well as for various switches. In broadband microwave amplifiers, they are indispensable for temperature compensation of gain variation.
  • variable attenuation was realized by PIN diodes and a pair of hybrid couplers.
  • the frequency performance of these attenuators is limited by the bandwidth of the hybrid couplers. More significantly, these attenuators are not compatible with GaAs monolithic circuits because of the PIN diodes.
  • variable attenuators that are constructed as GaAs monolithic circuits.
  • the first two of these involve the use of FETs (field-effect transistors) in T- or ⁇ -configurations, such as is described by Tajima et al. in "GaAs Monolithic Wideband (2-18 GHz) Variable Attenuators", IEEE MTT-S Digest, 1982, pages 479-481.
  • FETs field-effect transistors
  • a third approach has been to use cascaded switchable attenuation circuits that are selectively replaced with a reference path.
  • Such an approach is disclosed by Gupta et al. in "A 0.05- to 14-GHz 5-Bit Digital Attenuator", GaAs IC Symposium, IEEE, 1987, pages 231 to 234. T-networks are used for each digitally selectable segment of the attenuation path. Attenuation ratios for each bit are provided by using different FET gate widths and shunt resistor values.
  • a fourth approach has been the use of segmented dual-gate MESFETs, as described by Hwang et al. in "A Microwave Phase and Gain Controller With Segmented-Dual-Gate MESFETs in GaAs MMICs", IEEE MTT-S Monolithic Symposium, 1984, pages 1-5. With this approach digital gain control is achieved by properly scaled gate-width ratios among the dual-gate MESFETs.
  • the minimum number of control bits of a digital attenuator defines the maximum range of attenuation that can be achieved.
  • Gupta uses a 5-bit attenuator design of 8-, 4-, 2-, 1-, and 0.5-dB selectable attenuation components, resulting in 15.5-dB dynamic range and 0.5-dB step resolution. If 1-dB step resolution is used, a 5-bit attenuator can achieve a dynamic range of 31-dB.
  • the present invention provides a novel design for the implementation of a multi-bit digital attenuator.
  • Various features of the invention provide reduced insertion loss and the elimination of switches in the main signal path.
  • the invention provides a single composite structure which defines the various attenuation states. The use of segmented gates and separate series-bit networks is also avoided.
  • a switched attenuator having an input terminal for receiving an input signal to be attenuated, and an output terminal for outputting the attenuated input signal.
  • a pair of first resistance components extend in series between the input terminal and the output terminal and join at a junction.
  • a second resistance component is controllable for selectively coupling the junction between the pair of first resistance components to a reference voltage, such as ground.
  • a pair of third resistance components are controllable jointly for selectively coupling the input terminal and the output terminal to the reference voltage. At least one of the second resistance components and the pair of third resistance components conducts at a time, except for the minimum loss state.
  • the first resistance components include a resistor and a plurality of FETs, of different widths or in series with a resistor, all connected in parallel.
  • Each FET is controlled jointly with an FET of the same gate size in the other first resistance component, so that select ones of the FETs, or none may be conducting in parallel with the series in-line resistances.
  • Another plurality of intermediate FETs having gates with different widths, connected in parallel and separately controllable for coupling selectively the junction between the two in-line resistors to ground.
  • an additional plurality of pairs of FETs couple the input and output terminals to ground.
  • the FETs making up each pair have gates with the same width and are jointly controllable.
  • the FETs in the different pairs have different widths and/or are in series with a different sized resistor.
  • the configuration and attenuation of the attenuator is varied.
  • the various configurations result in desired stepped attenuation value between input and output.
  • This preferred design always has a set of series resistors in line that provide a distortionless, passive signal path.
  • the preferred embodiment provides 16 attenuation states varying from less than 2 dB to almost 16 dB.
  • FIG. 2 is a circuit schematic of the circuit of FIG. 1.
  • FIG. 3 is a diagram showing attenuation steps achieved with the circuit of FIG. 2.
  • FIG. 4 is a diagram showing the input return loss of the circuit of FIG. 2.
  • FIG. 5 is a diagram showing the output return loss of the circuit of FIG. 2.
  • a variable attenuator 10 made according to the invention includes an input terminal 12 and an output terminal 14 coupled together by a pair 16 of first impedances 18 and 20 connected in series.
  • Impedances 18 and 20 are equal and include series resistors 22 and 24, respectively.
  • Resistors 22 and 24 are connected in parallel with variable first resistances 26 and 28, respectively.
  • the value of resistances 26 and 28 is determined by a common control line 30.
  • the impedance of each of first impedances 18 and 20 is thus the result of the parallel combination of the respective series resistors and resistances.
  • First impedances 18 and 20 are connected at what may be considered a junction 32.
  • This junction is coupled to a circuit reference voltage, preferably ground, via a second variable, shunt impedance 34.
  • this impedance has a non-infinite value, as determined by a control line 36, the pair 15 of first impedances and second impedance 34 form a T-configuration attenuator.
  • a pair 38 of third variable, shunt impedances 40 and 42 shunt the input terminal 12 and the output terminal 14 to ground. These impedances are equal and are controlled by a common control line 44.
  • impedances 34, 40 and 42 have non-infinite values, attenuator 10 has a double- ⁇ configuration.
  • impedance 34 has infinite value, the attenuator has a single- ⁇ configuration.
  • at least one of second impedance 34 and pair 38 of third impedances has a non-infinite value at any given time, to provide a shunt path in the attenuation network.
  • resistors 22 and 24 each have a value of 37 ohms.
  • Left and right variable resistances 26 and 28 consist of three pairs 46, 48 and 50 of dual-gate FETs, with the FETs in each pair being of the same size and commonly controlled.
  • FETs 52 and 54 of pair 46 have a gate width of 308 micrometers (um) and are controlled on a control line R11.
  • FETs 56 and 58 of pair 48 have a gate width of 69 um and are controlled on a control line R12.
  • FETs 60 and 62 controlled on line R13, have the same gate width as FETs 56 and 58, but also are connected in series with 100 ohm resistors 64 and 66, respectively, to increase the resistance of the branch in parallel with series resistors 22 and 24, thereby increasing the effective resistance of impedances 18 and 20. Impedances 18 and 20 have their highest values when the parallel FETs are switched off.
  • Second impedance 34 includes three FETs 68, 70 and 72, each coupling junction 32 to ground. These three FETs have respective gate widths of 170 um, 106 um and 138 um; are in series with respective resistors 74, 76 and 78 of 14, 92 and 40 ohms, respectively; and are controlled on respective control lines R23, R21 and R22, as shown.
  • FET 68 has two gates and FETs 70 and 72 each have one gate.
  • Pair 38 of third impedances includes pairs 80 and 82 of respective FETs 84 and 86, and 88 and 90.
  • the respective gate-widths of the FETs in these pairs is 21 um and 42 um.
  • FETs 84 and 86 are in series with 400 ohm resistors 92 and 94.
  • FETS 88 and 90 are in series with 200 ohm resistors 96 and 98.
  • These two pairs of FETs are controlled on control lines R31 and R32, respectively.
  • impedance 40 comprises FET 82 and resistor 92 and/or FET 88 and resistor 96.
  • impedance 42 comprises FET 86 and resistor 94 and/or FET 90 and resistor 98.
  • a four-bit control signal can be applied to attenuator 10 by interfacing the attenuator control lines with a decoder that generates actual control signals corresponding to the attenuation level identified by the selected four-bit code.
  • the attenuation steps are approximately 1 dB each and the attenuation varies from about -2 dB to about -15.5 dB over a frequency range of 1 to 11 GHz.
  • FIGS. 4 and 5 show the input and output return loss for the circuit of FIG. 2. Specifically, in FIG. 4, the top curve 100 shows that the input return loss at the minimum attenuation level is over -18 dB over almost the entire frequency range, whereas at the maximum attenuation level, the input return loss represented by curve 102 is over -23 dB.

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  • Networks Using Active Elements (AREA)
US07/575,407 1990-08-28 1990-08-28 Switched low-loss attenuator Expired - Fee Related US5157323A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US07/575,407 US5157323A (en) 1990-08-28 1990-08-28 Switched low-loss attenuator
EP91305873A EP0474337A1 (en) 1990-08-28 1991-06-28 Switched low-loss attenuator
JP3217386A JPH06112767A (ja) 1990-08-28 1991-08-28 スイッチされる低損失減衰器

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US07/575,407 US5157323A (en) 1990-08-28 1990-08-28 Switched low-loss attenuator

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US5157323A true US5157323A (en) 1992-10-20

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EP (1) EP0474337A1 (ja)
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Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5281928A (en) * 1992-10-26 1994-01-25 M/A-Com, Inc. Electronic attenuator
US5309048A (en) * 1992-09-24 1994-05-03 Itt Corporation Distributed digital attenuator
US5440280A (en) * 1993-09-17 1995-08-08 Mpr Teltech Ltd. Digital microwave multi-bit attenuator
US5563557A (en) * 1994-03-28 1996-10-08 Kabushiki Kaisha Toshiba Attenuator having a plurality of current source circuits
US5903177A (en) * 1996-09-05 1999-05-11 The Whitaker Corporation Compensation network for pinch off voltage sensitive circuits
US6288669B1 (en) 1999-07-15 2001-09-11 Daramana G. Gata Switched capacitor programmable gain and attenuation amplifier circuit
DE10063999A1 (de) * 2000-12-21 2002-08-14 Rohde & Schwarz Mikrowellen-Dämpfungsglied
US6680640B1 (en) * 1999-11-11 2004-01-20 Broadcom Corporation High linearity large bandwidth, switch insensitive, programmable gain attenuator
US20040036462A1 (en) * 2002-06-27 2004-02-26 Rohde & Schwarz Gmbh & Co. Kg Microwave switching with illuminatd field effect transistors
US6731160B1 (en) 1999-11-11 2004-05-04 Broadcom Corporation Adjustable bandwidth high pass filter for large input signal, low supply voltage applications
US6737933B2 (en) 2002-01-15 2004-05-18 Nokia Corporation Circuit topology for attenuator and switch circuits
US20040119558A1 (en) * 2002-12-19 2004-06-24 Mitsubishi Denki Kabushiki Kaisha Attenuator
US20040160272A1 (en) * 1999-11-11 2004-08-19 Broadcom Corporation Large dynamic range programmable gain attentuator
US7038533B2 (en) 1999-11-11 2006-05-02 Broadcom Corporation Gigabit ethernet transceiver with analog front end
US20090167403A1 (en) * 2006-05-26 2009-07-02 Microtune (Texas), L.P. AGC method using digital gain control
US20100141363A1 (en) * 2004-10-13 2010-06-10 Yantel Corporation Variable attenuator
US20100171541A1 (en) * 2007-09-21 2010-07-08 Wen Hui Zhang Constant phase digital attenuator with on-chip matching circuitry
US20110025396A1 (en) * 2006-05-26 2011-02-03 Microtune (Texas), L.P. Digital Attenuator Circuits and Methods for Use thereof
US8135369B2 (en) 2007-11-27 2012-03-13 Renesas Electronics Corporation Communication device
US20140361847A1 (en) * 2013-06-05 2014-12-11 Qualcomm Incorporated Low loss multiple output switch with integrated distributed attenuation
US9531359B1 (en) * 2015-10-08 2016-12-27 Peregrine Semiconductor Corporation Multi-state attenuator
US20180054178A1 (en) * 2016-08-16 2018-02-22 Skyworks Solutions, Inc. Digital switched attenuator
CN109995344A (zh) * 2019-05-10 2019-07-09 中国电子科技集团公司第三十四研究所 一种数控衰减电路及其调节方法
US10396735B2 (en) 2016-11-11 2019-08-27 Skyworks Solutions, Inc. Amplifier system with digital switched attenuator
US10498383B2 (en) 2016-02-26 2019-12-03 Skyworks Solutions, Inc. Attenuation circuits with low insertion loss, and modules and devices using same
US10867981B2 (en) 2015-06-10 2020-12-15 Advantest Corporation High frequency integrated circuit and emitting device for irradiating the integrated circuit
CN117013988A (zh) * 2023-08-10 2023-11-07 无锡华睿芯微电子科技有限公司 一种单电压控制的压控衰减器及芯片

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US6677688B2 (en) * 2000-06-07 2004-01-13 Tyco Electronics Corporation Scalable N×M, RF switching matrix architecture
JP2005328359A (ja) * 2004-05-14 2005-11-24 Mitsubishi Electric Corp 可変減衰器
WO2006100726A1 (ja) 2005-03-18 2006-09-28 Fujitsu Limited 可変減衰器及び集積回路
US8903344B2 (en) * 2010-11-30 2014-12-02 Qualcomm Incorporated Programmable attenuator
CN102624350A (zh) * 2012-03-22 2012-08-01 南京理工大学常熟研究院有限公司 超宽带组合并联分压式数字/模拟可变衰减器
JP6284295B2 (ja) * 2012-09-14 2018-02-28 エイブリック株式会社 分圧回路
JP7262090B2 (ja) * 2017-10-06 2023-04-21 ザインエレクトロニクス株式会社 合成抵抗回路および可変利得増幅回路

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US4216444A (en) * 1977-09-16 1980-08-05 Thomson-Csf Step adjustable attenuator
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US4787686A (en) * 1985-12-20 1988-11-29 Raytheon Company Monolithic programmable attenuator
US4837530A (en) * 1987-12-11 1989-06-06 Hewlett-Packard Company Wideband (DC-50 GHz) MMIC FET variable matched attenuator

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Cited By (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5309048A (en) * 1992-09-24 1994-05-03 Itt Corporation Distributed digital attenuator
US5281928A (en) * 1992-10-26 1994-01-25 M/A-Com, Inc. Electronic attenuator
US5440280A (en) * 1993-09-17 1995-08-08 Mpr Teltech Ltd. Digital microwave multi-bit attenuator
US5563557A (en) * 1994-03-28 1996-10-08 Kabushiki Kaisha Toshiba Attenuator having a plurality of current source circuits
US5903177A (en) * 1996-09-05 1999-05-11 The Whitaker Corporation Compensation network for pinch off voltage sensitive circuits
US6288669B1 (en) 1999-07-15 2001-09-11 Daramana G. Gata Switched capacitor programmable gain and attenuation amplifier circuit
US7106122B2 (en) 1999-11-11 2006-09-12 Broadcom Corporation High linearity large bandwidth, switch insensitive, programmable gain attenuator
US20050162220A1 (en) * 1999-11-11 2005-07-28 Broadcom Corporation Adjustable bandwidth high pass filter for large input signal, low supply voltage applications
US20040140840A1 (en) * 1999-11-11 2004-07-22 Broadcom Corporation High linearity large bandwidth, switch insensitive, programmable gain attenuator
US20040150467A1 (en) * 1999-11-11 2004-08-05 Broadcom Corporation Adjustable bandwidth high pass filter for large input signal, low supply voltage applications
US20060192614A1 (en) * 1999-11-11 2006-08-31 Behzad Arya R Gigabit ethernet transceiver with analog front end
US7081790B2 (en) 1999-11-11 2006-07-25 Broadcom Corporation Adjustable bandwidth high pass filter for large input signal, low supply voltage applications
US20040160272A1 (en) * 1999-11-11 2004-08-19 Broadcom Corporation Large dynamic range programmable gain attentuator
US8841963B2 (en) 1999-11-11 2014-09-23 Broadcom Corporation Gigabit ethernet transceiver with analog front end
US6731160B1 (en) 1999-11-11 2004-05-04 Broadcom Corporation Adjustable bandwidth high pass filter for large input signal, low supply voltage applications
US6876243B2 (en) 1999-11-11 2005-04-05 Broadcom Corporation High linearity large bandwidth, switch insensitive, programmable gain attenuator
US6894558B2 (en) 1999-11-11 2005-05-17 Broadcom Corporation Adjustable bandwidth high pass filter for large input signal, low supply voltage applications
US7038533B2 (en) 1999-11-11 2006-05-02 Broadcom Corporation Gigabit ethernet transceiver with analog front end
US6680640B1 (en) * 1999-11-11 2004-01-20 Broadcom Corporation High linearity large bandwidth, switch insensitive, programmable gain attenuator
US7102428B2 (en) 1999-11-11 2006-09-05 Broadcom Corporation Large dynamic range programmable gain attenuator
US20050168261A1 (en) * 1999-11-11 2005-08-04 Broadcom Corporation High linearity large bandwidth, switch insensitive, programmable gain attenuator
US6967529B2 (en) 1999-11-11 2005-11-22 Broadcom Corporation Large dynamic range programmable gain attenuator
DE10063999B4 (de) * 2000-12-21 2010-06-24 Rohde & Schwarz Gmbh & Co. Kg Mikrowellen-Dämpfungsglied
DE10063999A1 (de) * 2000-12-21 2002-08-14 Rohde & Schwarz Mikrowellen-Dämpfungsglied
US6737933B2 (en) 2002-01-15 2004-05-18 Nokia Corporation Circuit topology for attenuator and switch circuits
DE10228810B4 (de) * 2002-06-27 2010-09-30 Rohde & Schwarz Gmbh & Co. Kg Mikrowellen-Schaltung mit beleuchteten Feldeffekt-Transistoren
US20040036462A1 (en) * 2002-06-27 2004-02-26 Rohde & Schwarz Gmbh & Co. Kg Microwave switching with illuminatd field effect transistors
US6876271B2 (en) 2002-06-27 2005-04-05 Rohde & Schwarz Gmbh & Co. Kg Microwave switching with illuminated field effect transistors
US20040119558A1 (en) * 2002-12-19 2004-06-24 Mitsubishi Denki Kabushiki Kaisha Attenuator
US6922115B2 (en) 2002-12-19 2005-07-26 Mitsubishi Denki Kabushiki Kaisha Attenuator with switchable transistors for controlling attenuation
US20100141363A1 (en) * 2004-10-13 2010-06-10 Yantel Corporation Variable attenuator
US8212648B2 (en) * 2004-10-13 2012-07-03 Yantel Corporation Variable attenuator
US20090167403A1 (en) * 2006-05-26 2009-07-02 Microtune (Texas), L.P. AGC method using digital gain control
US20110025396A1 (en) * 2006-05-26 2011-02-03 Microtune (Texas), L.P. Digital Attenuator Circuits and Methods for Use thereof
US20100171541A1 (en) * 2007-09-21 2010-07-08 Wen Hui Zhang Constant phase digital attenuator with on-chip matching circuitry
US7990201B2 (en) * 2007-09-21 2011-08-02 M/A-COM Technology Solutions Holdings Inc. Constant phase digital attenuator with on-chip matching circuitry
US8135369B2 (en) 2007-11-27 2012-03-13 Renesas Electronics Corporation Communication device
US20140361847A1 (en) * 2013-06-05 2014-12-11 Qualcomm Incorporated Low loss multiple output switch with integrated distributed attenuation
US10867981B2 (en) 2015-06-10 2020-12-15 Advantest Corporation High frequency integrated circuit and emitting device for irradiating the integrated circuit
US9531359B1 (en) * 2015-10-08 2016-12-27 Peregrine Semiconductor Corporation Multi-state attenuator
WO2017062085A1 (en) * 2015-10-08 2017-04-13 Peregrine Semiconductor Corporation Improved multi-state attenuator
US9935614B2 (en) 2015-10-08 2018-04-03 Psemi Corporation Multi-state attenuator
US10193531B2 (en) 2015-10-08 2019-01-29 Psemi Corporation Digital step attenuator
US10498383B2 (en) 2016-02-26 2019-12-03 Skyworks Solutions, Inc. Attenuation circuits with low insertion loss, and modules and devices using same
US20180054178A1 (en) * 2016-08-16 2018-02-22 Skyworks Solutions, Inc. Digital switched attenuator
US10382003B2 (en) 2016-08-16 2019-08-13 Skyworks Solutions, Inc. Digital switched attenuator
CN109792099A (zh) * 2016-08-16 2019-05-21 天工方案公司 数字切换式衰减器
US10651816B2 (en) 2016-08-16 2020-05-12 Skyworks Solutions, Inc. Digital switched attenuator
US10193520B2 (en) * 2016-08-16 2019-01-29 Skyworks Solutions, Inc. Digital switched attenuator
CN109792099B (zh) * 2016-08-16 2021-10-12 天工方案公司 数字切换式衰减器
US10396735B2 (en) 2016-11-11 2019-08-27 Skyworks Solutions, Inc. Amplifier system with digital switched attenuator
US10756688B2 (en) 2016-11-11 2020-08-25 Skyworks Solutions, Inc. Amplifier system with digital switched attenuator
CN109995344A (zh) * 2019-05-10 2019-07-09 中国电子科技集团公司第三十四研究所 一种数控衰减电路及其调节方法
CN109995344B (zh) * 2019-05-10 2024-02-13 中国电子科技集团公司第三十四研究所 一种数控衰减电路及其调节方法
CN117013988A (zh) * 2023-08-10 2023-11-07 无锡华睿芯微电子科技有限公司 一种单电压控制的压控衰减器及芯片

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JPH06112767A (ja) 1994-04-22
EP0474337A1 (en) 1992-03-11

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