US3834083A - Machine for grinding an edge contour on a semiconductor wafer - Google Patents

Machine for grinding an edge contour on a semiconductor wafer Download PDF

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Publication number
US3834083A
US3834083A US00210569A US21056971A US3834083A US 3834083 A US3834083 A US 3834083A US 00210569 A US00210569 A US 00210569A US 21056971 A US21056971 A US 21056971A US 3834083 A US3834083 A US 3834083A
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Prior art keywords
grinding
chuck
wafer
head
machine
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US00210569A
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English (en)
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K Hoshi
K Sugita
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Sony Corp
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Sony Corp
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D13/00—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor

Definitions

  • ABSTRACT A grinding machine for producing a rounded chamfer on the edge of a workpiece such as a semiconductor wafer.
  • the workpiece is attached to a revolving chuck and a grinding head having oblique resilient grinding members is located opposite the chuck.
  • the grinding members lie along generators of a cone and extend beyond the edges of the workpiece and press against the edge.
  • Semiconductor wafers are ground in this machine by pressing their edges against the resilient grinding devices while rotating the wafer and moving the grinding devices in a lateral circular path concentric with the axis of rotation of the wafer.
  • a further object is to provide an improved machine capable of grinding specific contours on the edge portions of semiconductor wafers having perimeters which are primarily round but have straight portions at one specific location.
  • semiconductor wafers which are to be ground, or chamfered, along the edge are mounted on rotatable chucks beneath grinding heads which comprise separately rotatable devices so arranged they they follow eccentric curves with respect to the axis of the heads on which the wafers themselves are mounted.
  • the grinding devices which extend downwardly from the heads, are short rods or strips bent or formed at appropriate angles to achieve the desired ground contour of the edge of the wafers. Using these grinding strips in a machine with the combined relative eccentric and rotary motions of the grinding heads and the chucks produces uniformly contoured and lapped edges of semiconductor wafers of different sizes without having to change to grinding strips of different configuration.
  • the contour of the edges of the semiconductors can further be controlled by raising or lowering the grinding heads.
  • FIGS. 1 and 2 are enlarged cross-sectional views illustrating epitaxial-grown layers on semiconductor wafers.
  • FIG. 3 is an enlarged perspective view illustrating the shape of semiconductor wafers.
  • FIG. 4 is a drawing illustrating one example of a conventional grinding machine.
  • FIG. 5 is an enlarged partial view of a wafer illustrating the specific profile ground according to the present invention.
  • FIG. 6 is a schematic front view of the grinding machine of the present invention.
  • FIG. 7 is a cross-sectional view of the grinding machine along the line AA in FIG. 6.
  • FIG. 8 is a cross-sectional view of the machine along the line B-B in FIG. 6.
  • FIGS. 9 and 10 illustrate the grinding of wafers by resilient grinding tools.
  • FIG. 11 illustrates one example of the eccentric movement mechanism used in the machine shown in FIG. 6.
  • FIG. 12 is a cross-sectional view, partially broken away, illustrating one example of a vacuum chuck of the type shown in FIG. 6.
  • FIGS. 13 and 14 are enlarged side-elevational views illustrating one example of a holder of the resilient grinding devices used in the machine in FIG. 6.
  • FIG. 15 is an enlarged view illustrating the resilient grinding tool in FIG. 14.
  • FIG. 16 is a cross-sectional view of a grinding device along the line C-C in FIG. 15.
  • FIG. 17 is a cross-sectional view illustrating a resilience adjusting ring along the line DD in FIG. 13.
  • FIG. 4 shows one example of a conventional technique for beveling the wafer l.
  • the wafer is fixed on a support 4 and is ground, or lapped, by a cylindrical grindstone 5 rotating on its own axis.
  • the grindstone 5 is rotated around the periphery of the wafer 1 so that the axis of the grindstone generates a generally conical surface of revolution, or the wafer l is rotated about a vertical axis while the grindstone is rotated in a single location.
  • the flat edge la and the round edge la cannot be lapped to have the same profile because the axis of the grindstond tilts more nearly perpendicular when it reaches the flat portion la.
  • the grindstone causes rather deep mechanical distortion in the wafer, and as a result crystal defects occur in the epitaxial-grown layer 2 due to such distortion.
  • Both the round edge portion 1a and the flat edge la should have the same specific cross-sectional profile.
  • the angle 0 and the width w of the beveled portion lb have specific values with respect to the thickness t of the wafer l.
  • the surface of the beveled portion 1b is rounded with a curvature R. For example, if t 250 ⁇ L-300 ⁇ L, it is preferable that w 0.5mm. and 6 -l5. These data have been selected on the basis of extensive experiments by the present inventors.
  • FIGS. 6, 7, and 8 show one embodiment of a grinding machine incorporating the present invention.
  • a frame 6 forms the body of the grindingmachine and has a rectangular oil pan 7 with an outlet 7 at one side of it. The oil pan is set into the top of the frame.
  • a panel 8 is located above the oil pan 7 and columns 9 extend up from the oil pan to support the panel. The columns 9 are joined to the panel 8 and to the oil pan 7 by individual connectors 9.
  • a swinging plate 10 between the oil pan 7 and the panel 8 makes an eccentric rotational movement. The mechanism of the eccentric rotation will be described hereinafter in connection with FIG. 1 1.
  • the swinging plate 10 is provided with two rows of holding means 11. Each of these holding means comprises a cylinder 12 operated by air or hydraulic fluid through suitable air or hydraulic lines 12a and 12b. In addition, there is a holder 13 located below the swinging plate 10 and a sliding rod 14 mounted in the holder 13. Each rod 14 is prevented from rotating around its own axis but can be moved up and down by a piston in the cylinder 12. Attached to the lower end of each sliding rod 14 is a grinding device 15 that comprises a plurality of tools in the form of resilient strips.
  • Vacuum chucks 16, each having a head 17, are provided on the oil pan 7 at locations corresponding to each of the grinding devices 15.
  • One of the wafers 1 is held and rotated by each of the heads 17 and is contacted by the lower surfaces of the strips attached to the grinding device 15.
  • Each grinding device 15 rotates eccentrically with respect to the wafer below it, and each wafer is rotated by the respective head 17.
  • the edge of each of the wafers 1 is ground to have a specific cross-section.
  • suitable amounts of grinding liquid such as water, light oil, etc., are supplied to the wafers 1.
  • the grinding machine also includes a common seat plate 18 and an elevator 19 for a wafer magazine. These items will be described in greater detail hereinafter.
  • FIG. 11 shows an eccentric rotation mechanism 20.
  • a holder 21 is bolted to the upper panel 8 and a gear 22 is rotatably supported below the panel 8 by means of a short hollow shaft 23 held in two bearings 24.
  • the upper end of the shaft 23 is threaded and a nut 25 is fitted thereon to hold the shaft 23 in place.
  • the shaft 23 is hollow, its inner bore 23 is not concentric with the outer surface of the shaft but is offset with respect thereto by a distance a.
  • Below the gear 22 is a support structure 26 which comprises a main shaft 27 having an upper flange 28a and a lower flange 28b. An integral extension 29 of the main shaft 27 extends into the bore 23.
  • the axis of the main shaft 27 is offset with respect to the axis of the integral extension 29 by a distance b.
  • Another integral extension 30 which is also an integral extension of the main shaft 27, and both the integral extensions 29 and 30 are threaded at their outermost ends.
  • the extension 29 is held by means of a nut 31 and is provided with an adjusting knob 32.
  • This extension is capable of rotating within the bore 23" but has a number of preferred stopping points determined by a detent arrangement comprising a spring-biased ball 33 and a number of recesses 34.
  • a detent arrangement comprising a spring-biased ball 33 and a number of recesses 34.
  • the integral shaft must be rotated within the bore 23 to bring the axis of the main shaft 27 into alignment with the axis of the shaft 23.
  • the recesses 34 in the upper flange 28a may be equally spaced around the flange 28a and identification of the eccentricity can be determined by noting the angular alignment of the knob 32 and by listening to the clicks as the ball 33 moves from one recess 34 to the next.
  • the ball can retract into a hole 73 in the gear 22 to move from one recess 34 to the next but is pressed against the flange 28a by a spring 74.
  • the other integral extension 30 of the main shaft 27 is supported in a hanger 35 by a pair of bearings 36 separated by a spacer 40.
  • the hanger 35 is bolted directly to the swinging plate 10.
  • a nut 37 is threaded on the end of the extension 30 to hold it in place, and a ring 41 is threaded into the end of the hanger 35 to hold the bearings 35.
  • each of the mechanisms 20 acts like an eccentric having a small throw, which is determined by the eccentricity setting of the knob 32. Both of the mechanisms 20 must have the same eccentricity.
  • the gears 22 of both of these mechanisms are coupled to a common pinion 42, which is connected to the low-speed shaft of a gear motor 43.
  • FIG. 12 shows the in greater detail the vacuum chuck mechanism 16 and its rotatable head 17.
  • the vacuum chuck 16 extends through the oil pan 7 and through the common seat plate 18, which is bolted to the oil pan 7.
  • a bearing holder 44 is bolted to the common seat plate 18 and extends through the oil pan 7.
  • This bearing holder plate has two bearings 45 in it and separated by a spacer 46.
  • a rotatable hollow shaft 47 is located in the bearings 45 and extends both below and above the bearing holder 44.
  • the upper end of the hollow shaft 47 is an enlarged head 48 that has a reentrant lower grooved surface that fits over a raised nipple on the common seat plate 18.
  • a gear 49 is rigidly attached to the shaft 47 to rotate the shaft, and a nut 50 is threaded onto the lowermost end of the shaft to hold the entire shaft assembly together.
  • the gear 49 extends through an open section of the cover 51 and meshes with a main gear 53 that rotates the gear 49 and the shaft 47.
  • the vacuum system for the chuck 16 includes a pipe fitting 52 that has a pipe column 52 which extends up into the shaft 47.
  • a vacuum line 54 indicated as a single dotted line is connected by an elbow 55 to the pipe fitting 52.
  • Both the head 17, which extends down into the enlarged head 48, and the pipe column 52 have packing material 56 to achieve the necessary hermetic seal to prevent leakage of air in the vacuum system.
  • FIG. 13 shows an enlarged view of the holder 13 with the sliding rod 14 extending below it.
  • a head 57 is screwed into the lower end of the rod 14 and a hollow central tube 58 is inserted into a hole at the center of the head 56.
  • This tube is held in place by frictional engagement with the head and is joined by means of a connector 71 to a line 72 through which grinding fluid is supplied to the workpiece during the grinding operation.
  • the grinding elements themselves are bent strips 60 of a suitable material, such as stainless steel. Eight of these strips are attached to the lower side of the head 57 and are equally spaced around the head. Each of the strips comprises an upper or shank portion 61 that extends generally parallel to the axis of the holder 13 and a lower end portion 62 bent with respect to the upper end so that the included angle between the upper and lower ends is greater than 90.
  • the strips 60 which are wider than they are thick, are bent so that the direction in which the thickness of the upper or shank portion and lower end portion is measured is in a common plane.
  • the lower surface of the lower end portion 62 of each of the strips 60 is coated with a layer 62' of abrasive material, such as powdered diamonds, carborundum (silicon carbide) or the like to form a grinding surface.
  • abrasive material such as powdered diamonds, carborundum (silicon carbide) or the like to form a grinding surface.
  • the abrasive material may be applied to the end 62 by electro-deposition, and the lower ends are curved in cross-section, as shown in FIG. 16, in the shape of sections of circular cylinders with the abrasive material 62 on the convex side.
  • the cylindrical curvature makes the lower end more rigid, although the strip can still be considered resilient.
  • a resilience control device 65 may be used. This comprises a ring 66 having a set screw in it at the proper location to engage each of the upper or shank portions 61 of the strips 60 and an annular inner portion 68 that surrounds the central tube 58.
  • the resilience control device can be moved up or down on the upper or shank portions 61 to any desired extent to control the bending freedom of the strips 60.
  • Each of the lower end portions 62 lies along a direction that would constitute a generator of a cone.
  • the included angle 9 is only a little less than 180 but is enough to allow the grinding material 62' to be brought down into contact with the outer edge of the semiconductor wafer to be ground on this machine.
  • the included angle 6 is chosen to make the ground semiconductor wafer achieve the rounded profile shown in FIG. 5. This angle is also dependent on the material of which the strips 60 are made and is experimentally determined. Even if the angle 0 is selected to have the most ideal value, there is inevitably some amount of variation in the ground profiles. In order to reduce such variation the resilience adjusting device 65 is provided.
  • FIGS. 6 and 8 show the grinding machine in operation with one of the wafers 1 on each of the heads 17 of the vacuum chucks 16.
  • the rods 14 have been lowered by the cylinders 12 so that the grinding strips below each of the grinding devices 15 are in contact with the perimeters of the respective wafers.
  • the axis of each of the rods 14 is offset with respect to the axis of the respective vacuum chuck 16.
  • the wafers 1 are loaded onto the heads 17 from a wafer magazine 73.
  • the wafer magazine is rectangular and has a plurality of holes through it corresponding in number and in location to the heads 17 of the vacuum chucks.
  • the perimeter of each of the holes in the magazine 73 has a shelf that supports the edge of one of the wafers. This shelf allows each of the wafers to drop down below the top of the magazine 73, but more importantly, it permits the larger part of the perimeter of the hole above the shelf to serve as guide means to locate the wafer precisely so that when it is placed on the head 17 it will be in exactly the correct coaxial position with respect to the head.
  • the magazine 73 is raised and lowered by the elevators 19, each of which has an L-shaped support 19a to lift the magazine loaded with its wafers.
  • hydraulic pressure is applied to a pair of support rods 1%.
  • the magazine 73 with the proper number of wafers loaded on it, in this case eight wafers, is placed on the support 19a at the location shown by the broken line in FIG. 6.
  • each of the rods 14 In order to place the magazine at that location, each of the rods 14 must be raised by its respective cylinder 12 and the elevators 19 must be in their upper position. After the magazine has been loaded on the elevators, the latter are lowered enough to bring the magazine below the heads 17 of the vacuum chucks 16.
  • the grinding machine described hereinabove can be automatically operated. When the predetermined grinding period is over the elevators 19 are not only lifted to support the wafers 1 again but the grinding devices 15 are also lifted automatically and the swinging plate is brought to a stop. Successive operations of the machine may be automatically controlled according to a programmed cycle which takes approximately 30 seconds to complete.
  • FIGS. 9a and 9b and FIG. 10 The actual grinding of the edge of the wafer l is shown in somewhat greater detail in FIGS. 9a and 9b and FIG. 10.
  • the head 17 of the vacuum chuck rotates in the direction indicated by the arrow in FIG. 9a and carries the wafer 1 with it.
  • the axis of the grinding device is simultaneously moving continuously or orbiting in a circle having a center that coincides with the axis of the head 17.
  • the grinding material 62' on the lower ends of the strips 60 moves in the direction of the arrows e.
  • the grinding surfaces thus touch the edge of each of the wafers 1 while changing the angle of contact as shown in FIG. 9b. Over a cycle of operation this causes the edge of the semiconductor wafer 1 to be ground to the desired round contour.
  • a grinding machine for grinding a predetermined edge contour on a semiconductor wafer comprising: a chuck for holding the wafer; means for rotating said chuck; a grinding head having a plurality of resilient grinding elements extending therefrom, each of said resilient grinding elements having a grinding surface facing the wafer held by said chuck, means for moving said grinding head laterally in a circular path that is substantially coaxial with the axis of rotation of said chuck, said chuck and said head being longitudinally spaced to cause the grinding surfaces of said grinding elements to be pressed resiliently against the edge of said wafer at all relative positions of said head and said chuck, and the angle between said grinding surface of each of said grinding elements and the axis of said chuck being less than 90 at each point of contact between said grinding surface and the edge of said wafer so as to form a rounded contour on said edge.
  • the grinding machine of claim 1 comprising, in addition, means to adjust the position of said grinding head laterally with respect to said wafer.
  • the grinding machine of claim 1 comprising, in addition, means to move said grinding head toward and away from said chuck to control the pressure of said grinding surface against said wafer.
  • a grinding machine for grinding a predetermined edge contour on a semiconductor wafer comprising: a chuck for holding the wafer; means for rotating the chuck; and a grinding device including a head spaced axially from said chuck, and a plurality of grinding elements spaced apart about said head, each of said grinding elements being constituted by a flexibly resilient rod having a shank portion extending from said head toward said chuck generally parallel to the axis of rotation of the chuck and an end portion extending from said shank portion generally laterally outward with respect to said axis of rotation of the chuck to provide a grinding surface facing toward the wafer held by of each of said grinding elements to be pressed resiliently against the edge of said wafer held by the chuck in all rotary positions of the chuck.
  • a grinding machine for grinding a predetermined edge contour on a semiconductor wafer comprising: a chuck for holding the wafer; means for rotating the chuck; and a grinding device including a head spaced axially from said chuck and a plurality of grinding elements spaced apart about said head, each of said grinding elements being constituted by a flexibly resilient rod having a shank portion extending from said head toward said chuck generally parallel to the axis of rotation of said chuck and an end portion extending from said shank portion generally laterally outward with respect to said axis of rotation of the chuck, each of said rods being in the form of strip of resilient material having a width greater than its thickness and being bent so that the directions in which the thicknesses of said shank and end portions are measured lie in a common plane, said end portion having a curved cross-section comprising a segment of a circular cylinder with the convex side thereof facing said chuck to define a grinding surface, the angle included between said shank portion and end portion of each resilient rod being
  • a grinding machine for grinding a predetermined edge contour on a semiconductor wafer said machine cmprising: a chuck for holding the wafer; means for rotating said chuck; and a grinding device including a head spaced axially from said chuck a plurality of grinding elements spaced apart about said head, each of said grinding elements being a constituted by a flexibly resilient rod having a shank portion extending from said head toward said chuck generally parallel to the axis of rotation of said chuck and an end portion extending from said shank portion generally laterally outward with respect to said axis of rotation of the chuck to provide a grinding surface facing toward the wafer held by said chuck, the angle included between said shank portion and end portion of said flexibly resilient rod being greater than 90, the axial spacing of said head and chuck being selected to cause said grinding surface of each of said grinding elements to be pressed resiliently against the edge of said wafer held by the chuck in all rotary positions of said chuck, and a resilience adjustment ring encirling and attached to
  • a grinding machine for grinding a predetermined edge contour simultaneously on a plurality of semiconductor wafers comprising:
  • each of said grinding heads comprising a plurality of resilient grinding devices attached thereto, each of said devices comprising an oblique grinding surface facing the respective wafer and extending beyond the edge thereof at an angle of less than 90 with respect to the axis of the respective chuck;
  • said means to swing said grinding head comprises a plate having means therein for holding said grinding heads in position.
  • a pair of main shafts each comprising a first extension at one end laterally offset with respect to the axis of said main shaft and a second extension at the other end;
  • each of said first extensions being attached to one of said driving gear means to be rotated thereby, each of said driving gear means comprising an eccentrically bored shaft to received a respective one of said first extensions;
  • the grinding machine of claim 11 comprising, in addition, detent adjustment means between each of said gear means and the respective one of said main shafts to set the diameter of the circle of motion of said plate to specific values.
  • the grinding machine of claim 9 comprising, in addition:
  • a plate having a plurality of apertures corresponding in number to the number of said chucks;

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
US00210569A 1970-12-21 1971-12-21 Machine for grinding an edge contour on a semiconductor wafer Expired - Lifetime US3834083A (en)

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JP45115467A JPS504544B1 (fr) 1970-12-21 1970-12-21

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Cited By (11)

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US4488930A (en) * 1980-01-26 1984-12-18 Sumitomo Electric Industries, Ltd. Process for producing circular gallium arsenide wafer
DE4031163A1 (de) * 1989-10-03 1991-04-11 Speedfam Corp Kanten-poliergeraet
US5154022A (en) * 1991-06-21 1992-10-13 International Business Machines Corporation High precision micromachining of very fine features
US5751055A (en) * 1994-02-12 1998-05-12 Shin-Etsu Handotai Co., Ltd. Semiconductor single crystalline substrate and method for production thereof
US5952050A (en) * 1996-02-27 1999-09-14 Micron Technology, Inc. Chemical dispensing system for semiconductor wafer processing
US20030054736A1 (en) * 2001-09-17 2003-03-20 International Business Machines Corporation Edge finishing process for glass or ceramic disks used in disk drive data storage devices
US20040097084A1 (en) * 2002-03-14 2004-05-20 Kazuya Fukuda Method for grinding rear surface of semiconductor wafer
EP1465242A1 (fr) * 2002-01-11 2004-10-06 Nikko Materials Company, Limited Plaquette a semi-conducteurs et son procede de fabrication
US20070151673A1 (en) * 2005-12-29 2007-07-05 Lg.Philips Lcd Co., Ltd. Substrate bonding apparatus for liquid crystal display panel
CN111347061A (zh) * 2018-12-24 2020-06-30 有研半导体材料有限公司 一种硅环加工的工艺方法
CN113579891A (zh) * 2021-06-23 2021-11-02 福安市中虹机电技术开发有限公司 圆片堆叠打磨装置及其堆叠打磨方法

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JPS55112946A (en) * 1979-02-21 1980-09-01 Matsushita Electric Ind Co Ltd Controlling device of air flow in air conditioner
CN113400131A (zh) * 2021-05-28 2021-09-17 力成科技（苏州）有限公司 一种改善晶圆边缘碎裂的削边装置
CN113842729B (zh) * 2021-09-24 2022-11-25 南京利卡维智能科技有限公司 一种多轴研磨机用真空抽取机构及其真空研磨方法
CN114871934B (zh) * 2022-07-05 2022-10-25 靖江市苏伦工程机械有限公司 销轴智能生产线自动防错位磨削抛光装置

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Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4488930A (en) * 1980-01-26 1984-12-18 Sumitomo Electric Industries, Ltd. Process for producing circular gallium arsenide wafer
DE4031163A1 (de) * 1989-10-03 1991-04-11 Speedfam Corp Kanten-poliergeraet
US5154022A (en) * 1991-06-21 1992-10-13 International Business Machines Corporation High precision micromachining of very fine features
US5751055A (en) * 1994-02-12 1998-05-12 Shin-Etsu Handotai Co., Ltd. Semiconductor single crystalline substrate and method for production thereof
US6793764B1 (en) 1996-02-27 2004-09-21 Micron Technology, Inc. Chemical dispensing system for semiconductor wafer processing
US5952050A (en) * 1996-02-27 1999-09-14 Micron Technology, Inc. Chemical dispensing system for semiconductor wafer processing
US7470344B1 (en) 1996-02-27 2008-12-30 Micron Technology, Inc. Chemical dispensing system for semiconductor wafer processing
US20030054736A1 (en) * 2001-09-17 2003-03-20 International Business Machines Corporation Edge finishing process for glass or ceramic disks used in disk drive data storage devices
US6860795B2 (en) 2001-09-17 2005-03-01 Hitachi Global Storage Technologies Netherlands B.V. Edge finishing process for glass or ceramic disks used in disk drive data storage devices
US20050123709A1 (en) * 2001-09-17 2005-06-09 Hitachi Global Storage Technologies Netherlands B.V. Glass or ceramic disk which is not chemically strengthened for use in disk drive data storage devices
US20050124265A1 (en) * 2001-09-17 2005-06-09 Hitachi Global Storage Technologies Netherlands B.V. Edge finishing process for glass or ceramic disks used in disk drive data storage devices
US6991521B2 (en) 2001-09-17 2006-01-31 Hitachi Global Storage Technologies Netherlands B.V. Edge finishing process for glass or ceramic disks used in disk drive data storage devices
EP1465242A1 (fr) * 2002-01-11 2004-10-06 Nikko Materials Company, Limited Plaquette a semi-conducteurs et son procede de fabrication
EP1465242A4 (fr) * 2002-01-11 2005-08-17 Nikko Materials Co Ltd Plaquette a semi-conducteurs et son procede de fabrication
US20040097084A1 (en) * 2002-03-14 2004-05-20 Kazuya Fukuda Method for grinding rear surface of semiconductor wafer
US20070151673A1 (en) * 2005-12-29 2007-07-05 Lg.Philips Lcd Co., Ltd. Substrate bonding apparatus for liquid crystal display panel
US7839477B2 (en) * 2005-12-29 2010-11-23 Lg Display Co., Ltd. Substrate bonding apparatus for liquid crystal display panel
CN111347061A (zh) * 2018-12-24 2020-06-30 有研半导体材料有限公司 一种硅环加工的工艺方法
CN111347061B (zh) * 2018-12-24 2021-03-30 有研半导体材料有限公司 一种硅环加工的工艺方法
CN113579891A (zh) * 2021-06-23 2021-11-02 福安市中虹机电技术开发有限公司 圆片堆叠打磨装置及其堆叠打磨方法

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