US3729335A - Method of depositing inorganic coatings from vapour phase - Google Patents
Method of depositing inorganic coatings from vapour phase Download PDFInfo
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- US3729335A US3729335A US00136481A US3729335DA US3729335A US 3729335 A US3729335 A US 3729335A US 00136481 A US00136481 A US 00136481A US 3729335D A US3729335D A US 3729335DA US 3729335 A US3729335 A US 3729335A
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- decomposable
- workpiece
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- rate
- coating
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- 238000000151 deposition Methods 0.000 title abstract description 74
- 238000000034 method Methods 0.000 title abstract description 41
- 238000000576 coating method Methods 0.000 title description 55
- 239000007788 liquid Substances 0.000 abstract description 57
- 150000001875 compounds Chemical class 0.000 abstract description 36
- 239000000203 mixture Substances 0.000 abstract description 35
- 238000010438 heat treatment Methods 0.000 abstract description 20
- 239000000725 suspension Substances 0.000 abstract description 16
- 230000015572 biosynthetic process Effects 0.000 abstract description 11
- 230000005484 gravity Effects 0.000 abstract description 9
- 230000005855 radiation Effects 0.000 abstract description 9
- 238000009834 vaporization Methods 0.000 abstract description 9
- 230000008016 vaporization Effects 0.000 abstract description 9
- 238000005979 thermal decomposition reaction Methods 0.000 abstract description 5
- 230000008021 deposition Effects 0.000 description 55
- 239000011248 coating agent Substances 0.000 description 30
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 26
- 229910052753 mercury Inorganic materials 0.000 description 26
- 239000000126 substance Substances 0.000 description 20
- 229910052751 metal Inorganic materials 0.000 description 18
- 239000002184 metal Substances 0.000 description 18
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 18
- 239000000243 solution Substances 0.000 description 15
- 229910052755 nonmetal Inorganic materials 0.000 description 14
- 150000002739 metals Chemical class 0.000 description 13
- 238000000354 decomposition reaction Methods 0.000 description 12
- 239000000047 product Substances 0.000 description 11
- 229910052804 chromium Inorganic materials 0.000 description 10
- 239000011651 chromium Substances 0.000 description 10
- 150000002843 nonmetals Chemical class 0.000 description 10
- 229910052732 germanium Inorganic materials 0.000 description 8
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052796 boron Inorganic materials 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- KVNYFPKFSJIPBJ-UHFFFAOYSA-N 1,2-diethylbenzene Chemical compound CCC1=CC=CC=C1CC KVNYFPKFSJIPBJ-UHFFFAOYSA-N 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- -1 silicon Chemical class 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000001939 inductive effect Effects 0.000 description 4
- 229910001338 liquidmetal Inorganic materials 0.000 description 4
- 150000002736 metal compounds Chemical class 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- HVURSIGIEONDKB-UHFFFAOYSA-N benzene;chromium Chemical compound [Cr].C1=CC=CC=C1.C1=CC=CC=C1 HVURSIGIEONDKB-UHFFFAOYSA-N 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000006193 liquid solution Substances 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- JTPNRXUCIXHOKM-UHFFFAOYSA-N 1-chloronaphthalene Chemical class C1=CC=C2C(Cl)=CC=CC2=C1 JTPNRXUCIXHOKM-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- FXVVQUOZYAFTFI-UHFFFAOYSA-N O=N[Ni]C1C=CC=C1 Chemical compound O=N[Ni]C1C=CC=C1 FXVVQUOZYAFTFI-UHFFFAOYSA-N 0.000 description 2
- 239000006093 Sitall Substances 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- VQLYBLABXAHUDN-UHFFFAOYSA-N bis(4-fluorophenyl)-methyl-(1,2,4-triazol-1-ylmethyl)silane;methyl n-(1h-benzimidazol-2-yl)carbamate Chemical compound C1=CC=C2NC(NC(=O)OC)=NC2=C1.C=1C=C(F)C=CC=1[Si](C=1C=CC(F)=CC=1)(C)CN1C=NC=N1 VQLYBLABXAHUDN-UHFFFAOYSA-N 0.000 description 2
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 150000004678 hydrides Chemical class 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 229910000833 kovar Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910001120 nichrome Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- OCJBOOLMMGQPQU-UHFFFAOYSA-N 1,4-dichlorobenzene Chemical compound ClC1=CC=C(Cl)C=C1 OCJBOOLMMGQPQU-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- MQRLVHIMCWFYTO-UHFFFAOYSA-N C(C)C1=C(C=CC=C1)CC.[Cr] Chemical compound C(C)C1=C(C=CC=C1)CC.[Cr] MQRLVHIMCWFYTO-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BDAGIHXWWSANSR-UHFFFAOYSA-M Formate Chemical compound [O-]C=O BDAGIHXWWSANSR-UHFFFAOYSA-M 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 101100465000 Mus musculus Prag1 gene Proteins 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- VXAUWWUXCIMFIM-UHFFFAOYSA-M aluminum;oxygen(2-);hydroxide Chemical compound [OH-].[O-2].[Al+3] VXAUWWUXCIMFIM-UHFFFAOYSA-M 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- FQNHWXHRAUXLFU-UHFFFAOYSA-N carbon monoxide;tungsten Chemical group [W].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] FQNHWXHRAUXLFU-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 229940117389 dichlorobenzene Drugs 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- CZZYITDELCSZES-UHFFFAOYSA-N diphenylmethane Chemical compound C=1C=CC=CC=1CC1=CC=CC=C1 CZZYITDELCSZES-UHFFFAOYSA-N 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- OJURWUUOVGOHJZ-UHFFFAOYSA-N methyl 2-[(2-acetyloxyphenyl)methyl-[2-[(2-acetyloxyphenyl)methyl-(2-methoxy-2-oxoethyl)amino]ethyl]amino]acetate Chemical compound C=1C=CC=C(OC(C)=O)C=1CN(CC(=O)OC)CCN(CC(=O)OC)CC1=CC=CC=C1OC(C)=O OJURWUUOVGOHJZ-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- UQMOLLPKNHFRAC-UHFFFAOYSA-N tetrabutyl silicate Chemical compound CCCCO[Si](OCCCC)(OCCCC)OCCCC UQMOLLPKNHFRAC-UHFFFAOYSA-N 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- WOZZOSDBXABUFO-UHFFFAOYSA-N tri(butan-2-yloxy)alumane Chemical compound [Al+3].CCC(C)[O-].CCC(C)[O-].CCC(C)[O-] WOZZOSDBXABUFO-UHFFFAOYSA-N 0.000 description 1
- QIVLHVRZYONPSZ-UHFFFAOYSA-N tributylindigane Chemical compound CCCC[In](CCCC)CCCC QIVLHVRZYONPSZ-UHFFFAOYSA-N 0.000 description 1
- BXJWDOYMROEHEN-UHFFFAOYSA-N tributylstibane Chemical compound CCCC[Sb](CCCC)CCCC BXJWDOYMROEHEN-UHFFFAOYSA-N 0.000 description 1
- WWVNWQJKWKSDQM-UHFFFAOYSA-N triethylarsane Chemical compound CC[As](CC)CC WWVNWQJKWKSDQM-UHFFFAOYSA-N 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- ZBZHVBPVQIHFJN-UHFFFAOYSA-N trimethylalumane Chemical compound C[Al](C)C.C[Al](C)C ZBZHVBPVQIHFJN-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- PXXNTAGJWPJAGM-UHFFFAOYSA-N vertaline Natural products C1C2C=3C=C(OC)C(OC)=CC=3OC(C=C3)=CC=C3CCC(=O)OC1CC1N2CCCC1 PXXNTAGJWPJAGM-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
Definitions
- a method of depositing inorganic coatings from vapour phase involves the formation of vapour phase of liquid compounds of elements, as well as solutions or suspensions of volatile compositions of said elements adapted to release deposited elements or compositions thereof during thermal decomposition due to heating and vaporization of said liquid over the entire surface of a workpiece by proper thermal radiation of the workpiece being treated. To this end said liquid is supplied under the force of gravity adjacent to and along said workpiece.
- the present invention relates to a method of depositing inorganic coatings from vapour phase of liquid metal or non-metal compounds onto the surface of a workpiece being treated.
- the deposition of coatings of highly volatile decomposition products is, however, non-uniform, that is the rate of deposition is initially increased with consequent decrease by a factor of as much as several hundred, the rate of deposition being limited by the mass transfer rate (diffusion rate) of a decomposed substance moving to a support or workpiece in the atmos phere, wherein the main part of the total pressure is con-.
- the first group comprises the introduction of vapour phase, which has been preliminary formed, into contact with a heated workpiece being treated, the vapour phase being insulated from condensed phase of a parent substance in equilibrium therewith, that is the deposition is taking place from non-equilibrium vapour phase.
- the second group involves the introduction of vapour phase into contact with a workpiece being treated, the vapour phase being in equilibrium with respect to an excess of the condensed phase of a decomposable substance, said condensed phase being disposed below said workpiece being treated.
- the contact per se with non-equilibrium vapour phase presupposes a decrease of the deposition rate due to a reduction of concentration of a decomposable substance intensified by condensation of vapour thereof under high concentration of vapour of decomposition products. For this reason, high deposition rates and uniformity in composition and structure of coatings may be achieved by this method only at the initial stages of treatment.
- the above object is accomplished by a method of depositing inorganic coatings from vapour phase of liquid compounds of metals and non-metals such as silicon, germainium or boron, as well as solutions and suspensions of volatile compositions of said elements used in combination or separately onto the surface of a workpiece being treated, the workpiece being heated at the temperature corresponding to the release of deposited elements or compositions thereof from decomposable compounds, wherein, according to the present invention, said decomposable liquid is supplied under the force of gravity over the surface of said workpiece being coated at a distance ensuring heating and vaporization of decomposable compounds under the action of thermal radiation of said workpiece, as well as creation of vapour phase over the entire surface of said workpiece being treated.
- Th s method permits a substantial increase in the rate of deposition of inorganic coatings from vapour phase and an improvement of the uniformity of thickness thereof, as well as homogeneity in chemical composition.
- the present method results in an improvement in homogeneity and uniformity of coating on the surface of workpieces having complicated shapes.
- the guide surface to receive a decomposable liquid may comprise the surface of a cylindrical rod adapted to be introduced into the interior of a workpiece.
- the present method results in an improvement in homogeneity and uniformity of coating deposited upon the mternal surface of elongated tubular workpieces.
- the method according to the present invention is performed in the following way:
- a rod 2 is introduced into the interior of a workpiece 1 to supply a liquid from a tube 3 therealong, said liquid containing elements necessary to form an inorganic coating on the surface of the workpiece 1 being treated.
- Liquid compounds of metals and non-metals such as silicon, germanium or boron, may be used, as well as solutions or suspensions of volatile compositions of said elements taken in combination or separately.
- hydrides for example, in the method according to the invention there may be employed hydrides, mixed hydrides, halogenides, alcoholates, fl-diketonates, alkyl and aryl compounds of metals and non-metals such as silicon, germanium and boron, sandwich-compounds of transition metals of the group of bis-aren metal, bis-cyclopentadienyl metal, metal carbonyls, mixed sandwich carbonyls and nitrosyls of metals, etc.
- Some chemical compounds may be obtained in the liquid state by melting a compound, the melt being used in particular in case of fusible substances.
- solutions of compounds in the method according to the invention may be employed solutions of solid, liquid and gaseous compounds, high-boiling liquids which are not decomposable under conditions of deposition of coatings and are adapted form during thermal decomposition readily removable and volatile products being preferably used as solvents.
- solvents hydrocarbons such as tetralin, Decalin, diphenylmethane homologues, etc., halogen derivatives of hydrocarbons such as chloronaphthalenes, chlorodiphenyls, etc., ethers and esters such as dimethyl esters of di-, triand polyethylene glycol, dialkylphthalates and so on.
- Compounds to be used for deposition of coatings according to the method of the invention by employment of solutions thereof must be sufiiciently soluble to prepare solutions and to volatilize these compounds during the heating for creation of vapour phase at the deposition stage.
- Compounds to be used in the form of solutions may be of one of the classes mentioned above but without limitation as to state of aggregation.
- suspensions of compounds in the method according to the invention may be used suspensions of solid volatile compounds of the classes referred to above in liquids which are not decomposable under conditions of deposition of coatings or which are decomposable with formation of readily removable thermal decomposition products similarly to the above-mentioned solutions.
- suspensions the same liquids may be used as described above with reference to preparation of solvents.
- decomposable liquids may be used both separately and in combinations in dependence of composition of a coating to be deposited.
- the method according to the invention may be carried out in an appropriate deposition chamber provided with the decomposable liquid input and the deposition products output, the chamber having to accommodate a workpiece heated at desired temperature before deposition.
- a workpiece may be heated by any method such as resistive heating, inductive heating, radiation, etc.
- the method according to the invention may be performed either at reduced pressure or in the atmosphere of an inert gas or a reaction reduction or oxidation gas, etc.
- Sample--graphite cylinder with an internal diameter of 20 mm., an external diameter of 40 mm. and a height of 60 mm., the internal surface of the cylinder being coated.
- the temperature of the sample-450 C. (inductive heating).
- Characteristics of the coatingwithin 1 hour chromium coating homogenous in composition and uniform in thickness was produced with a thickness of 1.1 mm. having fine and brilliant metallic surface and high hardness and adherence to the support.
- the deposition rate was of 1.1 mm. per hour.
- the deposition rate was 0.3 mm. per hour.
- the deposition rate was of 1.8 mm. per hour.
- EXAMPLE 5 The deposition rate was 14 g. per hour.
- Samplea steel cone with a base diameter of 60 mm. and a height of 60 mm., the external surface being coated.
- the temperature of the sample-400 C. (the internal resistive heating of the cone).
- the rate of the decomposable liquid supply 100 ml. per hour.
- Characteristics of the coatingwithin half an hour uniform and brilliant chromium layer was produced over the whole surface of the cone having a thickness of 0.4 mm.
- the deposition rate was .08 mm. per hour.
- the temperature of the sample400 C. resistive heating
- Characteristics of the coating--within half an hour brilliant chromium coating was produced on one side of the plate with a thickness of 0.1 mm.
- the deposition rate was 0.2 mm. per hour.
- the temperature of the sample380 C. resistive heating by means of a heater.
- Characteristics of the coatingwithin half an hour molybdenum coating was produced having a thickness of 0.4 mm. with even and brilliant surface having good adherence to the glass support.
- the deposition rate was 0.8 mm. per hour.
- EXAMPLE 8 Decomposable liquid-nickel-cyclopentadienyl-nitrosyl. Samplea ceramic cylinder have an internal diameter
- EXAMPLE 10 Decomposable liquidnickel bis isopropylcyclopentadienyl.
- the rate of the decomposable liquid supply 10-1.0 ml. per minute.
- the temperature of the sample400 C. (inductive heating).
- the rate of the decomposable liquid supply -50 ml. per hour.
- the deposition rate was 0.4 mm. per hour.
- Example 12 Decomposable liquid--trimethylaluminium.
- the rate of the decomposable liquid supply 50 ml. per hour.
- Characteristics of the coating-within 5 hours a coating with a thickness of 1.0 mm. was produced having a composition corresponding to aluminium carbide.
- the rate of deposition was 0.2 mm. per hour.
- Characteristics of the coating-within half an hour brilliant germanium coating was produced with a thickness of 0.2 mm.
- the deposition rate was 0.4 mm. per hour.
- Characteristics of the coatin-gwithin half an hour brilliant gray crystalline antimony coating was produced with a thickness of 0.15 mm.
- the deposition rate was 0.3 mm. per hour.
- Samplea cylinder of Kovar alloy with an internal diameter of mm. an external diameter of 23 mm. and a height of 50 mm.
- the temperature of the sample-600 C. (inductive heating).
- the rate of the decomposable liquid supply 0.3 ml. per minute.
- Characteristics of the coating-glassy layer consisting of silicon dioxide deposited on the internal surface of the sample with a thickness of micrometer.
- the deposition rate was 1.0 micrometer per minute.
- Samplea sitall plate with a diameter 20 mm. and a thickness of 2 mm. coated with thin aluminium film.
- Guide surface the surface of a rotatable inverted cone with a base diameter of 30 mm. disposed at 10 mm. above the sample.
- the rate of the decomposable liquid supply was of 0.5 ml. per minute.
- Characteristics of the coatingcontinuous dark coating having a specific resistance of 82 ohm per cm. and consisting of a mixture of rutile and anatase.
- the deposition rate was 1.5 micrometers per minute.
- EXAMPLE 17 Decomposable liquidtris-secondary butylato-alumini- Samplea bar of Kovar alloy with a diameter of 20 mm., a length of 50 mm.
- the rate of the decomposable liquid supply -0.5 ml. per minute.
- the deposition rate was 1.7 micrometers per minute.
- EXAMPLE 18 Decomposable liquida melt of aluminium triisopropylate.
- the decomposition rate was 2.1 micrometers per minute.
- the rate of the decomposable liquid supply 1.0 ml. per minute.
- Characteristics of the coating-transparent glassy layer having a composition corresponding to boric acid anhydride having a composition corresponding to boric acid anhydride.
- the decomposition rate was of 7.0 micrometers per minute.
- the deposition rate was 0.6 micrometer per hour.
- EXAMPLE 21 Decomposable liquida mixture of mol percent cyclopentadienyl nitrosyl nickel and 20 mol percent chromium (O) bis-ethyl-benzene.
- the rate of the decomposable liquid supply -1.3 ml. per minute.
- Characteristics of the coatingbrilliant metallic coating having a composition corresponding to Nichrome.
- the decomposition rate was 15 micrometers per minute.
- EXAMPLE 22 Decomposable liquid-an equimolecular mixture of tributylindium and tributylantimony.
- the rate of the decomposable liquid supply 0.6 ml. per minute.
- Characteristics of the coatingdark-c0lour layer with metallic lustre having a composition corresponding to indium antimonide.
- the decomposition rate was 7.0 micrometers per minute.
- EXAMPLE 23 Decomposable liquidan equimolecular mixture of triethylgallium and triethylarsine.
- Guide surface a vertically positioned flat network parallel with the sample surface spaced at a distance of 15 mm. from the latter.
- the rate of the decomposable liquid supply 0.6 ml. per minute.
- Characteristics of the coating-coating with metallic lustre having a composition corresponding to gallium arsenide.
- the deposition rate was 6.0 micrometers per minute.
- EXAMPLE 24 Decomposable liquida mixture of 25 mol percent tetrabutoxysilane and 75 mol percent tris-secondary butylatoaluminium.
- the rate of the decomposable liquid supply 0.6 ml. per minute.
- Characteristics of the coating-glassy layer having a composition corresponding to the presence of silicon dioxide and aluminium dioxide in the ratio of 1:3.
- the deposition rate was 1.6 micrometers per minute.
- EXAMPLE 2 Decomposable liquid-solution of bis-allylpalladiumchloride in chloronaphthalene.
- the rate of the decomposable liquid supply depends on concentration of a solution and should provide for the supply of 1.0 g. per minute of solid bis-allylpalladiumchloride.
- Characteristics of the catingbrilliant palladium layer on the internal surface of the sample having good adherence to the support and electric conductivity corresponding to that of pure palladium.
- the deposition rate was 7 micrometers per minute.
- EXAMPLE 26 Decomposable liquid-solution of bis-allylpalladiumchloride in dichlorobenzene.
- the rate of the decomposable compound supply0.5 g. per minute.
- EXAMPLE 27 Decomposbale liquid-solution of tungsten hexacarbonyl in tetralin.
- Characteristics of the coating-within 1 hour tungsten coating with a thickness of 0.8 mm. was produced having good adherence to the support and brilliant surface.
- the deposition rate was 0.8 mm. per hour.
- EXAMPLE 28 Decomposable liquid-bis hexafluoracetylacetonatocopper in a tetralin solution saturated with hydrazine.
- the rate of the decomposable compound supply -50 g. per hour.
- Characteristics of the coating-brilliant crystalline copper layer on the internal surface of the sample having good adherence.
- the deposition rate was 15 micrometers per minute.
- EXAMPLE 29 Decomposable liquid-a suspension of dibenzenechromium in tetralin.
- the rate of the decomposable compound supply-l00 g. per hour.
- the deposition rate was of 0.9 mm. per hour.
- EXAMPLE 30 Decomposable liquid-a suspension of copper formiate in tetralin.
- the deposition rate was 12 micrometer per minute.
- EXAMPLE 31 Decomposable liquid--a suspension of bis-cyclopentadienylcarbonylnickel in tetralin.
- the rate of decomposable compound supply-1.2 g. per minute.
- the deposition rate was of 9 micrometers per minute.
- EXAMPLE 32 Decomposable liquida suspension of a mixture of 20 mol percent dibenzenechromium and mol percent bis-cyclopentadienylcarbonylnickel in dimethylester of diethylene glycol.
- Characteristics of the coating-brilliant metallic layer having electric conductivity corresponding to that of Nichrome.
- the deposition rate was 7 micrometers per minute.
- EXAMPLE 33 Decomposable liquid-a suspension of dibenzenechromium in cyclopentadienylnitrosylnickel in the ratio of 1:4.
- the deposition rate was 13 micrometers per minute.
- the workpiece is heated at the temperature corresponding to the release of deposited elements or compositions thereof from decomposable compouds.
- the liquid supplied through the tube 3 fiows under the gravity over the surface of the rod 2, said liquid being heated and vaporized.
- the distance between the surface of the rod 2 and the surface of the workpiece 1 being treated should be such as to ensure heating and vaporization of decomposable compounds under the action of thermal radiation of said workpiece, as well as creation of vapour phase over the entire surface of the workpiece being treated.
- the guide surface for a decomposable liquid is preferably disposed equidistantly with respect to the surface of the workpiece being coated over the whole area thereof.
- the formation or deposition of a coating on the surface of a workpiece is taking place with continuous flow of a liquid along the surface being treated. Due to vaporization of a liquid under the action of thermal radiation of the workpiece, the concentration of vapour of a parent substance will be in equilibrium with respect to condensed phase thereof. As the liquid flows over the surface of the workpiece being coated, it is being heated up to higher temperatures thus providing for more intensive vaporization of a decomposable substance which contributes to an increase of the content thereof in vapour phase and, hence, to an increase of the rate of coating deposition.
- An increase of concentration of a decomposable substance vapour will be also promoted by the fact that particles of condensed phase, which have been formed upon the increase of the decomposition products pressure, are moved under the force of gravity over the surface of a workpiece being coated, heated and revaporized.
- saturated vapor is in equilibrium with respect to a decomposed liquid along the whole flow path thereof.
- the deposition rates of the order of 1-2 mm. per hour were achieved which was as much as 100 times higher as compared to ordinary rates of deposition from vapour phase by prior art methods.
- the coatings thus formed were more homogeneous in chemical composition and uniform in thickness than those produced during long deposition for many hours for obtaining coatings of the same thickness by prior art methods.
- the method according to the present invention permits the depositing of coatings of metals, oxides and other materials onto different supports.
- This method is the most eflicient in producing coatings having complicated shapes, such as cylinders, rings, tubes upon the external and internal surfaces of workpieces having complicated shapes, such as cylinders, rings, tubes and spheres.
- chromium bisethylbenzene was supplied into the chamber for deposition at the speed of 0.3-0.5 ml. per minute. In this case, under constant evacuation of decomposition products at the rate of 0.5-2.1 per second, the deposition rate achieved up to -21 microns per minute, and within 60-90 minutes the coating with a thickness of 1.5-2.0 mm. was obtained.
- the method has been also tested in depositing dielectric coatings of silcia and aluminium oxide when tetraethoxysilane and tri-secondary butyloxyaluminium respectively were subject to thermal decomposition.
- the method according to the invention allows the deposit of coatings of metals, dielectrics and other materials which are uniform in thickness and homogeneous in composition onto workpieces and parts.
- a method of depositing inorganic coatings from a vapour phase of liquid metal or non-metal compounds onto the surface of a workpiece being treated comprising the steps of heating the workpiece at a temperature corresponding to the evolution of deposited elements or compositions thereof onto the surface of said workpiece from volatile decomposable compounds of metals or non-metals such as silicon; germanium, and boron; supplying by gravity a decomposable liquid comprising said liquid compounds of metals or non-metals, solutions or suspensions of said volatile compounds employed either separately or in combination along the surface being coated of said workpiece starting at the top portion of said workpiece at a distance ensuring heating and vaporization of said decomposable compounds and formation of a vapour phase over the whole area in the proximity to the surface of said workpiece under the influence of thermal radiation from said heated workpiece.
- a method of depositing inorganic coating from a vapour phase of liquid metal or non-metal compounds onto the surface of a workpiece being treated comprising the steps of heating of the workpiece to a temperature corresponding to the evolution of deposited elements or compositions thereof onto the surface of said workpiece from volatile decomposable compounds of metals or non-metals such as silicon, germanium, and boron; supplying by gravity a decomposable liquid comprising said liquid compounds of metals or non-metals, solutions or suspensions of said volatile compounds employed either separately or in combination, alongside the surface of said workpiece starting from the top portion of said workpiece over a guiding surface from its uppermost point, said guiding surface being spaced from the surface of said workpiece at a distance ensuring heating and vaporization of said decomposable compounds under the influence of thermal radiation from said heated workpiece and the formation of a vapour phase over the whole area in the proximity to the surface of said workpiece.
- a method of depositing inorganic coating from a vapour phase of liquid metal or non-metal compounds onto the surface of a workpiece being treated comprising the steps of heating said workpiece to a temperature corresponding to the evolution of deposited elements or compositions thereof onto the surface of said workpiece from volatile decomposable compounds of metals or non-metals such as silicon, germanium, and boron; supplying by gravity a decomposable liquid comprising said liquid compounds of metals or non-metals, solutions or suspensions of said volatile compounds employed either separately or in combination alongside the inner surface to be coated of said workpiece along a guiding surface from the uppermost point thereof, said guiding surface comprising a cylindrical rod surface inserted inside said workpiece; said guiding surface being equidistantly spacedfrom the surface of said workpiece being coated, thereby ensuring heating and vaporization of said decomposable compounds under the influence of thermal radiation from said heated workpiece and formation of a vapour phase over the whole area in the proximity to the inner surface of said workpiece.
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemically Coating (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU1432551 | 1970-05-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
US3729335A true US3729335A (en) | 1973-04-24 |
Family
ID=20452367
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US00136481A Expired - Lifetime US3729335A (en) | 1970-05-29 | 1971-04-22 | Method of depositing inorganic coatings from vapour phase |
Country Status (6)
Country | Link |
---|---|
US (1) | US3729335A (enrdf_load_stackoverflow) |
CA (1) | CA935336A (enrdf_load_stackoverflow) |
DE (1) | DE2124400C3 (enrdf_load_stackoverflow) |
FR (1) | FR2090384B1 (enrdf_load_stackoverflow) |
GB (1) | GB1306784A (enrdf_load_stackoverflow) |
SE (1) | SE359322B (enrdf_load_stackoverflow) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3961926A (en) * | 1974-12-27 | 1976-06-08 | International Telephone And Telegraph Corporation | Preparation of germania cores in optical fibers |
US4042006A (en) * | 1973-01-05 | 1977-08-16 | Siemens Aktiengesellschaft | Pyrolytic process for producing a band-shaped metal layer on a substrate |
US4533378A (en) * | 1982-05-28 | 1985-08-06 | At&T Technologies, Inc. | Modified zirconia induction furnace |
US4608473A (en) * | 1982-05-28 | 1986-08-26 | At&T Technologies, Inc. | Modified zirconia induction furnace |
US5098326A (en) * | 1990-12-13 | 1992-03-24 | General Electric Company | Method for applying a protective coating to a high-intensity metal halide discharge lamp |
US5312509A (en) * | 1990-04-30 | 1994-05-17 | International Business Machines Corporation | Manufacturing system for low temperature chemical vapor deposition of high purity metals |
US20070251455A1 (en) * | 2006-04-28 | 2007-11-01 | Gt Equipment Technologies, Inc. | Increased polysilicon deposition in a CVD reactor |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4297150A (en) | 1979-07-07 | 1981-10-27 | The British Petroleum Company Limited | Protective metal oxide films on metal or alloy substrate surfaces susceptible to coking, corrosion or catalytic activity |
DE2941896A1 (de) * | 1979-10-17 | 1981-04-30 | Ruhrchemie Ag, 4200 Oberhausen | Verfahren zur herstellung von haftfaehigen schichten auf polyolefinen |
EP0033298A1 (fr) * | 1980-01-09 | 1981-08-05 | Battelle Memorial Institute | Fibre de verre protégée contre la corrosion et un procédé d'obtention de celle-ci |
US4886683A (en) * | 1986-06-20 | 1989-12-12 | Raytheon Company | Low temperature metalorganic chemical vapor depostion growth of group II-VI semiconductor materials |
US4924936A (en) * | 1987-08-05 | 1990-05-15 | M&T Chemicals Inc. | Multiple, parallel packed column vaporizer |
CA2046335A1 (en) * | 1989-02-02 | 1990-08-03 | Michael Cox | Forming a metal coating |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE533644C (de) * | 1930-04-16 | 1931-09-18 | Patra Patent Treuhand | Verfahren zur Herstellung von UEberzuegen auf elektrisch leitenden Draehten, Faeden,Baendern o. dgl. |
-
1971
- 1971-04-21 CA CA110968A patent/CA935336A/en not_active Expired
- 1971-04-22 US US00136481A patent/US3729335A/en not_active Expired - Lifetime
- 1971-05-03 GB GB1278371*[A patent/GB1306784A/en not_active Expired
- 1971-05-17 DE DE2124400A patent/DE2124400C3/de not_active Expired
- 1971-05-28 FR FR7119644A patent/FR2090384B1/fr not_active Expired
- 1971-05-28 SE SE06954/71A patent/SE359322B/xx unknown
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4042006A (en) * | 1973-01-05 | 1977-08-16 | Siemens Aktiengesellschaft | Pyrolytic process for producing a band-shaped metal layer on a substrate |
US3961926A (en) * | 1974-12-27 | 1976-06-08 | International Telephone And Telegraph Corporation | Preparation of germania cores in optical fibers |
US4533378A (en) * | 1982-05-28 | 1985-08-06 | At&T Technologies, Inc. | Modified zirconia induction furnace |
US4608473A (en) * | 1982-05-28 | 1986-08-26 | At&T Technologies, Inc. | Modified zirconia induction furnace |
US5312509A (en) * | 1990-04-30 | 1994-05-17 | International Business Machines Corporation | Manufacturing system for low temperature chemical vapor deposition of high purity metals |
US5098326A (en) * | 1990-12-13 | 1992-03-24 | General Electric Company | Method for applying a protective coating to a high-intensity metal halide discharge lamp |
US20070251455A1 (en) * | 2006-04-28 | 2007-11-01 | Gt Equipment Technologies, Inc. | Increased polysilicon deposition in a CVD reactor |
WO2007127657A3 (en) * | 2006-04-28 | 2008-11-20 | Gt Solar Inc | Increased polysilicon deposition in a cvd reactor |
US8647432B2 (en) | 2006-04-28 | 2014-02-11 | Gtat Corporation | Method of making large surface area filaments for the production of polysilicon in a CVD reactor |
US9683286B2 (en) | 2006-04-28 | 2017-06-20 | Gtat Corporation | Increased polysilicon deposition in a CVD reactor |
Also Published As
Publication number | Publication date |
---|---|
FR2090384A1 (enrdf_load_stackoverflow) | 1972-01-14 |
DE2124400B2 (de) | 1974-07-11 |
FR2090384B1 (enrdf_load_stackoverflow) | 1976-03-05 |
SE359322B (enrdf_load_stackoverflow) | 1973-08-27 |
GB1306784A (en) | 1973-02-14 |
CA935336A (en) | 1973-10-16 |
DE2124400C3 (de) | 1975-02-27 |
DE2124400A1 (de) | 1971-12-23 |
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