US3725749A - GaAS{11 {11 {11 P{11 {11 ELECTROLUMINESCENT DEVICE DOPED WITH ISOELECTRONIC IMPURITIES - Google Patents

GaAS{11 {11 {11 P{11 {11 ELECTROLUMINESCENT DEVICE DOPED WITH ISOELECTRONIC IMPURITIES Download PDF

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US3725749A
US3725749A US00158312A US3725749DA US3725749A US 3725749 A US3725749 A US 3725749A US 00158312 A US00158312 A US 00158312A US 3725749D A US3725749D A US 3725749DA US 3725749 A US3725749 A US 3725749A
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nitrogen
article according
gaas
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substrate
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Warren Olley Groves
Arno Henry Herzog
Magnus George Craford
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Monsanto Co
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/8242—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP characterised by the dopants
    • H—ELECTRICITY
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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    • H01L2224/732—Location after the connecting process
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    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
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    • Y10S438/914—Doping
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Definitions

  • ABSTRACT [22] Filed: June 30, 1971 v
  • the disclosure herein pertains to the preparation of [21] Appl l58312 semiconductor materials and solid-state devices fabricated therefrom. More particularly, the disclosure [52] U-S- C ----3 3 317/235 317/235 AN, pertains to a vapor phase process for the preparation 317/235 Q; 317/235 AP of electroluminescent materials, particularly GaAs P [51] Int. Cl. .H01l 15/00 1, doped h isoelectronic impurities, particularly [58] Fleld of Search ..317/235 N nitrogen, and to electroluminescent devices fabricated therefrom.
  • FIG.5 U1 HR 3 1375 am 2 m 3 FIGiG WITHOUT NITROGEN WITH NITROGEN .WITHOUT NITROGEN 0 -WITH NITROGEN FIGZ NVENTORS D em M Z w R/ EC QHEfl. N M 2 E O ROE 7 AR 1 WAM% ATTORNEY PAIENIEUAPR3 I973 SHEET 3 BF 3 WITHOUT NITROGEN WITH NITROGEN EFFICIENCY RATIO(C,QAS P IN) C,:A5 F V5 ALLOY COMPOSITION O 5 O 2 I I EFFICIENCY VS PEAK EMISSION WAVELENGTH FOR GREEN *RED ORANGE v YELLOW WAVELENGTH (A) FIG.5
  • troluminescent GaP devices are prepared by adding gallium nitride (GaN) and polycrystalline GaP containing a dopant of one conductivity type to a melt of elemental gallium (Ga) and heated to l,200C in a sealed quartz ampoule, followed by cooling to 800C over a period of about hours.
  • the irregularly-shaped single crystals of nitrogen-doped GaP formed in the process is extracted from the gallium by washing in concentrated I-lCl, cut to size and shape and polished.
  • the product thus formed is used as a substrate onto which an epitaxial layer of GaP of different conductivity type isgrown by the liquid phase technique known as tipping. Contacts are affixed to the P and N regions to fabricate a two-terminal P-N junction device.
  • a nitrogen-doped GaP epitaxial film is grown by liquid phase epitaxial deposition, e.g., by tipping, onto a substrate of GaP of opposite conductivity type to that in the epitaxial film; the Ga? substrate may or may not be further doped'with nitrogen.
  • a P-type dopant e.g., zinc or beryllium
  • a P-type dopant e.g., zinc or beryllium
  • the emission spectra for diodes fabricated from the epitaxial GaP/GaAs structure showed, inter alia, that isolated atoms of nitrogen were present as an unintentionally added impurity; no comment is offered as to either the possible source of nitrogen addition or its location within the device material, i.e., whether in the P or N regions of the GaP.
  • the process referred to is described-in more detail by E. G. Dierschke et al. in the Journal of Applied Physics, Vol. 41, No. l,pages 32l-328,Jan., l970.
  • the Dierschke et al. article does not indicate whether the isolated atoms of nitrogen shown to be present by emission spectra, were present in the N-type or P-type GaP; in any event, the nitrogen, like the arsenic, was unintentionally added.
  • the isoelectronic impurity, nitrogen is usually distributed uniformly throughout the epitaxial film and/or substrate upon which the film is deposited. Since the electroluminescence from isoelectronic nitrogen sites occurs within the vicinity of the P-N junction-space charge region, nitrogen atoms in the remaining portions of the material absorb part of the emitted radialayer growth would have the desired higher nitrogen concentration.
  • a layer of opposite conductivity type is grown by a second tipping operation from a melt containing the desired GaN level. After a desired growth period, the cooling cycle is interrupted and GaN evaporated from the Ga growth melt. Upon resuming the cooling cycle, the remaining layer is grown with a low nitrogen level.
  • a further object of the invention is to provide a new composition of matter particularly suitable for use in the fabrication of electroluminescent devices.
  • Another object of this invention is to provide improved electroluminescent devices fabricated from the nitrogen-doped GaAs ,P, produced herein.
  • This invention pertains to a vapor phase process for the introduction of isoelectronic impurities into the junction region only of semiconductor materials and to semiconductor devices prepared therefrom.
  • the invention pertains to the introduction of nitrogen into a specified region of GaAs ,BTx material which is subsequently fabricated into electroluminescent devices.
  • GaAs ,P is prepared by reacting a hydrogen halide 3 5 in hydrogen with Ga and combining the reaction mixture with hydrogen carrying PI-l AsI-I and an impurity dopant of one conductivity type to form GaAs P, which is deposited from the vapor phase onto a suitable substrate as an epitaxial film.
  • the composition of the the P-N junction is to be formed and radiation generated. Thereafter, the P-N junction is formed by either introducing into the reactant vapors an impurity of conductivity type opposite to that previously used or by diffusing an opposite-type impurity into the epitaxial layer after growth has been terminated.
  • the nitrogen-doped GaAs P epitaxial structure is then fabricated into electroluminescent devices by conventional techniques.
  • composition, lightemitting diodes may be fabricated to emit light of improved brightness and efficiency in colors ranging from red through green.
  • a cleaned and polished substrate wafer of single crystal GaP oriented 5 off the crystallographic plane was placed in a fused silica reactor tube located in a furnace.
  • the reactor tube was flushed with hydrogen to remove oxygen from the tube and surface of the substrate.
  • the reactant vapor was produced by introducing a stream of HCl at 3.5 cc/min. into a stream of hydrogen at 50 cc/min. and passing this stream over elemental Ga at 770C.
  • a second hydrogen stream at 450 cc/min. into which is introduced 0.29 cc/min. of AsH 0.88 cc/min. of PB and about 0.3 cc/min.
  • a continuously graded composition layer 2 is grown about 8am thick to a final composition corresponding to the formula GaAs0 P0165 and epitaxial deposition of this composition is continued to grow a layer 3 about 330p.m thick.
  • 300 cc/ min. of a 10% NH;; in hydrogen mixture was substituted for 300 cc/min. of H2 to grow a nitrogendoped epitaxial layer 4about 18am thick, after which growth was terminated and the system cooled to ambient.
  • the structure at this stage is as shown in FIG. 1C.
  • a sample of the material prepared as above was then diffused for 20 min. at 875C in an evacuated and sealed ampoule containing 3 mg. of Zn and 3 mg. of phosphorus, to produce a P-region 4b and P-N junction 5 about 6pm deep in the nitrogen doped layer as shown in FIG. 1D.
  • the entire epitaxial layer, including regions 2, 3, 4a and 4b, was doped with tcllurium to a net donor concentration of about 3 X l0cm".
  • the material produced in the above process was then fabricated intodevices.
  • the finished wafer was lapped from the substrate side to a thickness of about 5 mils. Because of the thickness of layer 3 this resulted in the removal of substrate l,'layer Zand a portion of layer 3 up to a level represented by dashed line 6 in FIG. 1D to produce the wafer shown in FIG. 1E.
  • the device For epitaxial structures having a total thickness for layers 2 through 4b (FIG. ID) of less than about 5 mils, the device would appear as in FIG. 1G.
  • Ohmic contact was made to the N-type surface 6 (FIG. 1E) by vacuum evaporating a layer 7 (FIGS.
  • Electroluminescent diodes fabricated with material of the composition produced in accordance with this embodiment of the invention produced an average brightness of about 830 foot-Lamberts at a current density of A/cm at a wavelength of 6,040 A as shown by reference to the upper curve in FIG. 6, which shows comparative curves for brightness vs. alloy com position for nitrogen-doped and nitrogen-free diodes measured at room temperature.
  • EXAMPLE 2 This example exemplifies an embodiment of the invention wherein a GaAs substrate is used and the P-N junction is formed by using zinc arsenide (ZnAs as the diffusant.
  • ZnAs zinc arsenide
  • the process operation here follows that described in the preceding example, again having reference to the steps and structure shown in FIGS. lA-F.
  • the reactant gas was produced by passing 5.4 cc/min. of HCl in 50 cc/min. of H over elemental Ga at 780C and combining the resultant mixture with 450 cc/min. of H containing 2.6 cc/min. of ASH, and 1.4 cc/rnin. of PH;, at a reaction temperature of about 925C. About 0.4 cc/min.
  • nitrogendoped LED '5 fabricated from the alloy composition of this example produced an average brightness of 470 foot-Lamberts at a wavelength of 6,650 A, which is of the same order magnitude of brightness produced by the non-nitrogen-doped LEDs at 20 Alcm
  • This performance is an order of magnitude better than that typ ically obtained for this alloy composition (which is in the indirect energy bandgap region) and is comparable in brightness to that of red-emitting LEDs from nonnitrogen-doped alloys of the composition GaAs P which is in the direct energy bandgap region.
  • LEDs of generally equivalent brightness can be fabricated throughout the spectral range from 6,500 A to 5,600 A. This is particularly important in the yellow portion of the spectrum, because high brightness yellow-emitting LEDs have not been available heretofore.
  • the improved efficiency performance of the nitrogen-doped electroluminescent devices of this invention, as compared with nitrogen-free devices is shown by reference to FIGS. 2-4.
  • the external quantum efficiencies referred to herein were obtained using epoxy-encapsulated diodes (epoxy lens not shown in FIG. 1) which were mounted on TO-l8 headers using Au/Ge preforms.
  • the addition of nitrogen causes a shift in the peak emission energy (eV) hence, wavelength, for a given GaAs P, composition.
  • eV peak emission energy
  • the wavelength value is divided into the conversion factor 1,2395, thus eV 12395/) ⁇ (A).
  • the separation between emission peaks in nitrogen-doped and nitrogen-free LEDs changes as a function of alloy composition. It will be noted that the separation between the peak emission energies of the nitrogendoped and undoped LEDs increases with decreasing x, reaching a maximum separation of about 0.15 eV in the region of 0.5 X 0.6.
  • the peak position and band width changes with current density and the nature and degree off the change is dependent upon the alloy composition and temperature.
  • the peak emission energies plotted in FIG. 2 were obtained at a relatively low injection current density of 10 A/cm.
  • the external quantum efficiency is plotted as a function of the GaAs, ,P composition.
  • the efficiency of the LEDs increases with decreasing x. This increase in efficiency is believed to be due largely to two factors. First, the increasing depth of the nitrogen center results in increased thermal stability of the trapped exciton. Second, the fact that the separation between the (100) and (000) minima is decreasing with decreasing x is expected to give rise to an increase in the transition probability for the A-line emission.
  • FIG. 4 are shown curves for nitrogen-doped and nitrogen-free LEDs with external efficiencies plotted against peak emission wavelengths for various alloy compositions. It will be seen that the efficiencies for the nitrogen-doped LEDs is greater than those of nitrogenfree LEDs throughout the spectrum shown on the graph. The greatest separation between the curves, representing the greatest improvement in external efficiencies of the nitrogen-doped over the nitrogen-free LEDs, is generally in the yellow region of the spectrum.
  • the efficiency of the nitrogen-doped LEDs is more than 20 times greater than that for the nitrogen-free LEDs.
  • FIG. 5 Another way to express this increased efficiency is shown in FIG. 5 wherein the efficiency ratio, GaAs ,,P:N/GaAs, of nitrogen-doped to nitrogen-free LEDs is plotted against alloy composition.
  • the quantum efficiency of the nitrogendoped diodes is a strong function of alloy composition, the luminous efficiency and brightness are nearly independent of alloy composition in the region x 0.4. The reason for this is that the sensitivity of the human eye decreases sharply as x decreases and the color changes from green through yellow to red. Typical brightness performance obtained with and without nitrogen doping are shown in FIG. 6 wherein brightness is plotted as a function of alloy composition.
  • the graded alloy composition, layer 2 can be from 1 to 300p.m or more, although best results to date are obtained with layers on the order of about 25am.
  • the region 3 of constant alloy composition is preferably about lp.m thick, but can have thicknesses within the range 0-300p.m or more.
  • the N- type region 4a of the nitrogen-doped surface layer preferably should be about 5pm, but more broadly, can have thicknesses within the range 0-300um or more.
  • the P-type region 4b of the nitrogen-doped layer preferably should be about 5-l0p.m thick and, more broadly can be from 1 to 25 pm or slightly more.
  • either one or both of the constant composition alloy layer 3 and/or nitrogen-doped layer 4a can be omitted from the epitaxial GaAs ,P, structures and LEDs of this invention.
  • the epitaxial GaAs, ,,P structure is as shown in FIG. 1F, with layers 1 and 2 removed by lapping.
  • the conductivity type determining impurity used in doping the epitaxial film may be introduced initially into the region 2 of graded composition and continuously added throughout the remainder of the growth period, or the impurity may be first introduced at the beginning of growth of the constant composition layer 3.
  • the epitaxial film is doped with N-type impurities and diffused with P-type impurities to form the P-N junction.
  • Suitable impurities include those conventionally used in the art, e.g., S, Se, Te or Si for N-type doping and Be, Zn or Cd for P-type doping.
  • the N-type impurity concentration range is broadly, from about 2.0 X 10 2.0 X 10" cm and, preferably, about 7.0 X 10 cm'.
  • the surface concentration of P-type impurities is typically on the order of 10 atoms/em
  • the nitrogen is selectively introduced into the growing epitaxial film only in the region in which the P-N junction is to be formed, typically in the upper 5-20p.m surface region (layer 4 in FIG. 1C).
  • the nitrogen concentration in this surface region is typically about 1 X 10 -1 X 10 atoms/cm
  • the entire epitaxial film may be doped with nitrogen, but in much lower concentrations below layer 4a.
  • the isoelectronic impurity may be in troduced from any suitable source, e.g., elemental nitrogen, gaseous or volatile compounds thereof.
  • the graded composition alloy layer 2 may be either linearly or non-linearly graded, but in preferred embodiments is linearly graded from the composition of the GaAs or GaP substrate to the desired final composition.
  • the electroluminescent devices of this invention may be fabricated as discrete LEDs or as arrays thereof by conventional photolithographic techniques.
  • the nitrogen-doped GaAs ,P,,. alloy compositions of the present invention are particularly suitable for use in the fabrication of LEDs in the visible portion of the spectrum. Although visible light is generated in materials within the range x 0.2 to 1.0 a preferred range for the LEDs of the invention is where x is between about 0.3 and 0.9. For red light-emitting LEDs, x preferably is between 0.4 and 0.6, and for yellow LEDs x is between 0.6 and 0.9.
  • the presence of initial layers (1 and 2 in FIG. 1) essential in producing the desired material is not essential to the operation of the final device and they may be removed in reducing the thickness of the semiconductor chip to a convenient value of to l50y.m.
  • An article of manufacture comprising an electroluminescent material having the formula GaAs ,P,,, wherein x has a value within the range of 0.2 and 10, containing impurity atoms of a first conductivity type and a surface region thereof containing isoelectronic impurity atoms and impurity atoms of conductivity type opposite to that of said first type to define a P-N junction in said material.
  • Article according to claim 4 having an additional region extending below and contiguous with the lower surface of said material, wherein the value of x continuously changes with distance from said lower surface.
  • Article according to claim 4 further including ohmic contacts and leads to an external circuit attached to surfaces of opposite conductivity type of said material.
  • Article according to claim 5 further including ohmic contacts and leads to an external circuit attached to surfaces of opposite conductivity type of said material.
  • Article according to claim 8 further including ohmic contacts and leads to an external circuit attached to surfaces of opposite conductivity of said material.
  • Article according to claim 9 further including ohmic contacts and leads to an external circuit attached to surfaces of opposite conductivity type of said material.

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US3790868A (en) * 1972-10-27 1974-02-05 Hewlett Packard Co Efficient red emitting electroluminescent semiconductor
US3852798A (en) * 1972-03-14 1974-12-03 Philips Corp Electroluminescent device
US3925119A (en) * 1973-05-07 1975-12-09 Ibm Method for vapor deposition of gallium arsenide phosphide upon gallium arsenide substrates
US3935039A (en) * 1973-04-04 1976-01-27 Tokyo Shibaura Electric Co., Ltd. Method of manufacturing a green light-emitting gallium phosphide device
FR2280205A1 (fr) * 1974-06-06 1976-02-20 Ibm Diodes photo-emissives emettant la lumiere par leur face arriere
US3964940A (en) * 1971-09-10 1976-06-22 Plessey Handel Und Investments A.G. Methods of producing gallium phosphide yellow light emitting diodes
US3979271A (en) * 1973-07-23 1976-09-07 Westinghouse Electric Corporation Deposition of solid semiconductor compositions and novel semiconductor materials
US3984263A (en) * 1973-10-19 1976-10-05 Matsushita Electric Industrial Co., Ltd. Method of producing defectless epitaxial layer of gallium
US3985590A (en) * 1973-06-13 1976-10-12 Harris Corporation Process for forming heteroepitaxial structure
FR2390017A1 (enrdf_load_stackoverflow) * 1977-05-06 1978-12-01 Mitsubishi Monsanto Chem
US4154630A (en) * 1975-01-07 1979-05-15 U.S. Philips Corporation Method of manufacturing semiconductor devices having isoelectronically built-in nitrogen and having the p-n junction formed subsequent to the deposition process
FR2430668A1 (fr) * 1978-07-07 1980-02-01 Mitsubishi Monsanto Chem Plaquette epitaxique destinee a la fabrication d'une diode d'emission lumineuse
US4198251A (en) * 1975-09-18 1980-04-15 U.S. Philips Corporation Method of making polychromatic monolithic electroluminescent assembly utilizing epitaxial deposition of graded layers
US4211586A (en) * 1977-09-21 1980-07-08 International Business Machines Corporation Method of fabricating multicolor light emitting diode array utilizing stepped graded epitaxial layers
US4214926A (en) * 1976-07-02 1980-07-29 Tdk Electronics Co., Ltd. Method of doping IIb or VIb group elements into a boron phosphide semiconductor
DE4011145A1 (de) * 1990-04-06 1991-10-10 Telefunken Electronic Gmbh Lumineszenz-halbleiterelement
US6303403B1 (en) * 1998-12-28 2001-10-16 Futaba Denshi Kogyo, K.K. Method for preparing gallium nitride phosphor
US20050144822A1 (en) * 2003-12-29 2005-07-07 Sargent Manufacturing Company Exit device with lighted touchpad
US20090095713A1 (en) * 2004-10-26 2009-04-16 Advanced Technology Materials, Inc. Novel methods for cleaning ion implanter components
US20110021011A1 (en) * 2009-07-23 2011-01-27 Advanced Technology Materials, Inc. Carbon materials for carbon implantation
US20130330917A1 (en) * 2005-06-22 2013-12-12 Advanced Technology Materials, Inc Apparatus and process for integrated gas blending
US9455147B2 (en) 2005-08-30 2016-09-27 Entegris, Inc. Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation
US9685304B2 (en) 2009-10-27 2017-06-20 Entegris, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US9960042B2 (en) 2012-02-14 2018-05-01 Entegris Inc. Carbon dopant gas and co-flow for implant beam and source life performance improvement
US9991095B2 (en) 2008-02-11 2018-06-05 Entegris, Inc. Ion source cleaning in semiconductor processing systems

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JPS61291491A (ja) * 1985-06-19 1986-12-22 Mitsubishi Monsanto Chem Co りん化ひ化ガリウム混晶エピタキシヤルウエハ
JPH02249400A (ja) * 1989-03-23 1990-10-05 Matsushita Electric Ind Co Ltd 音質評価装置
DE3940853A1 (de) * 1989-12-11 1991-06-13 Balzers Hochvakuum Anordnung zur niveauregelung verfluessigter gase
JP3436379B2 (ja) * 1992-07-28 2003-08-11 三菱化学株式会社 りん化ひ化ガリウムエピタキシャルウエハ

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US3560275A (en) * 1968-11-08 1971-02-02 Rca Corp Fabricating semiconductor devices
US3603833A (en) * 1970-02-16 1971-09-07 Bell Telephone Labor Inc Electroluminescent junction semiconductor with controllable combination colors
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US3646406A (en) * 1970-06-30 1972-02-29 Bell Telephone Labor Inc Electroluminescent pnjunction diodes with nonuniform distribution of isoelectronic traps
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US3617820A (en) * 1966-11-18 1971-11-02 Monsanto Co Injection-luminescent diodes
US3462320A (en) * 1966-11-21 1969-08-19 Bell Telephone Labor Inc Solution growth of nitrogen doped gallium phosphide
US3560275A (en) * 1968-11-08 1971-02-02 Rca Corp Fabricating semiconductor devices
US3603833A (en) * 1970-02-16 1971-09-07 Bell Telephone Labor Inc Electroluminescent junction semiconductor with controllable combination colors

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3964940A (en) * 1971-09-10 1976-06-22 Plessey Handel Und Investments A.G. Methods of producing gallium phosphide yellow light emitting diodes
US3852798A (en) * 1972-03-14 1974-12-03 Philips Corp Electroluminescent device
US3790868A (en) * 1972-10-27 1974-02-05 Hewlett Packard Co Efficient red emitting electroluminescent semiconductor
US3935039A (en) * 1973-04-04 1976-01-27 Tokyo Shibaura Electric Co., Ltd. Method of manufacturing a green light-emitting gallium phosphide device
US3925119A (en) * 1973-05-07 1975-12-09 Ibm Method for vapor deposition of gallium arsenide phosphide upon gallium arsenide substrates
US3985590A (en) * 1973-06-13 1976-10-12 Harris Corporation Process for forming heteroepitaxial structure
US3979271A (en) * 1973-07-23 1976-09-07 Westinghouse Electric Corporation Deposition of solid semiconductor compositions and novel semiconductor materials
US3984263A (en) * 1973-10-19 1976-10-05 Matsushita Electric Industrial Co., Ltd. Method of producing defectless epitaxial layer of gallium
FR2280205A1 (fr) * 1974-06-06 1976-02-20 Ibm Diodes photo-emissives emettant la lumiere par leur face arriere
US4154630A (en) * 1975-01-07 1979-05-15 U.S. Philips Corporation Method of manufacturing semiconductor devices having isoelectronically built-in nitrogen and having the p-n junction formed subsequent to the deposition process
US4198251A (en) * 1975-09-18 1980-04-15 U.S. Philips Corporation Method of making polychromatic monolithic electroluminescent assembly utilizing epitaxial deposition of graded layers
US4214926A (en) * 1976-07-02 1980-07-29 Tdk Electronics Co., Ltd. Method of doping IIb or VIb group elements into a boron phosphide semiconductor
FR2390017A1 (enrdf_load_stackoverflow) * 1977-05-06 1978-12-01 Mitsubishi Monsanto Chem
US4211586A (en) * 1977-09-21 1980-07-08 International Business Machines Corporation Method of fabricating multicolor light emitting diode array utilizing stepped graded epitaxial layers
FR2430668A1 (fr) * 1978-07-07 1980-02-01 Mitsubishi Monsanto Chem Plaquette epitaxique destinee a la fabrication d'une diode d'emission lumineuse
DE4011145A1 (de) * 1990-04-06 1991-10-10 Telefunken Electronic Gmbh Lumineszenz-halbleiterelement
US5194922A (en) * 1990-04-06 1993-03-16 Telefunken Electronic Gmbh Luminescent semiconductor element
US6303403B1 (en) * 1998-12-28 2001-10-16 Futaba Denshi Kogyo, K.K. Method for preparing gallium nitride phosphor
US20050144822A1 (en) * 2003-12-29 2005-07-07 Sargent Manufacturing Company Exit device with lighted touchpad
US7204050B2 (en) * 2003-12-29 2007-04-17 Sargent Manufacturing Company Exit device with lighted touchpad
US20090095713A1 (en) * 2004-10-26 2009-04-16 Advanced Technology Materials, Inc. Novel methods for cleaning ion implanter components
US20130330917A1 (en) * 2005-06-22 2013-12-12 Advanced Technology Materials, Inc Apparatus and process for integrated gas blending
US9666435B2 (en) * 2005-06-22 2017-05-30 Entegris, Inc. Apparatus and process for integrated gas blending
US9455147B2 (en) 2005-08-30 2016-09-27 Entegris, Inc. Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation
US9991095B2 (en) 2008-02-11 2018-06-05 Entegris, Inc. Ion source cleaning in semiconductor processing systems
US20110021011A1 (en) * 2009-07-23 2011-01-27 Advanced Technology Materials, Inc. Carbon materials for carbon implantation
US10497569B2 (en) 2009-07-23 2019-12-03 Entegris, Inc. Carbon materials for carbon implantation
US9685304B2 (en) 2009-10-27 2017-06-20 Entegris, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US9960042B2 (en) 2012-02-14 2018-05-01 Entegris Inc. Carbon dopant gas and co-flow for implant beam and source life performance improvement
US10354877B2 (en) 2012-02-14 2019-07-16 Entegris, Inc. Carbon dopant gas and co-flow for implant beam and source life performance improvement

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DE2231926A1 (de) 1973-01-18
USRE29845E (en) 1978-11-21
JPS58105539A (ja) 1983-06-23
JPS6057214B2 (ja) 1985-12-13
JPS584471B1 (enrdf_load_stackoverflow) 1983-01-26
DE2231926B2 (de) 1981-06-04
BE785633A (fr) 1972-12-29

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